CN217862155U - Integrated crystal support for diamond wire cutting semiconductor monocrystalline silicon wafer - Google Patents
Integrated crystal support for diamond wire cutting semiconductor monocrystalline silicon wafer Download PDFInfo
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- CN217862155U CN217862155U CN202221169523.5U CN202221169523U CN217862155U CN 217862155 U CN217862155 U CN 217862155U CN 202221169523 U CN202221169523 U CN 202221169523U CN 217862155 U CN217862155 U CN 217862155U
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Abstract
The utility model relates to an integrated crystal support for diamond wire cutting semiconductor monocrystalline silicon wafers, which effectively solves the problem that the existing crystal support brings assembly precision difference due to split assembly and further influences the cutting effect of crystal bars; the technical scheme includes that the crystal support comprises an I-shaped frame, a bonding table is arranged at the top of the I-shaped frame, clamping portions are arranged on two transverse sides of the bottom of the I-shaped frame, a plurality of flow guide holes are formed in the middle of the I-shaped frame at intervals, the crystal support is an integrated structure, high cutting precision is guaranteed, and the flow guide holes are formed in the crystal support, so that air and cutting liquid can penetrate through the crystal support, impact of the cutting liquid on a silicon rod and the crystal support is reduced, heat exchange is promoted, heat dissipation on the crystal support and the silicon rod in the cutting process is facilitated, and deformation caused by cutting heat is reduced.
Description
Technical Field
The utility model relates to a semiconductor monocrystalline silicon piece production technical field especially relates to a be used for brilliant support of buddha's warrior attendant wire-electrode cutting semiconductor monocrystalline silicon piece integral type.
Background
The diamond wire cutting machine adopts a mode of unidirectional circulation or reciprocating circulation motion of the diamond wire to enable the diamond wire and an object to be cut to form relative cutting motion, thereby achieving the purpose of cutting;
when the silicon single crystal rod is cut by the diamond wire, a crystal support is usually needed, the silicon rod to be cut needs to be adhered to the crystal support when the silicon single crystal rod is cut, then the silicon single crystal rod is fixed on the workbench through the crystal support, and then the silicon single crystal rod is continuously fed towards the diamond wire control platform by controlling the workbench (or the silicon single crystal rod is continuously fed towards the workbench), so that the cutting is generated between the diamond wire and the cut silicon rod to form the cutting, and the effect of slicing the silicon rod is finally realized;
most of crystal supports used in the market at present are formed by assembling multiple parts, and the machining precision, the assembly precision and the abrasion degree of the crystal supports are different, so that the silicon rod cutting is influenced, and the bent and warped slices and the poor crystal orientation deviation degree of the slices are caused;
the existing crystal support has single function and cannot realize rapid positioning of the crystal support in the subsequent degumming process, which is not beneficial to the improvement of the production efficiency;
in view of the above, we provide an integrated crystal holder for diamond wire cutting of semiconductor single crystal silicon wafers to solve the above problems.
SUMMERY OF THE UTILITY MODEL
In view of the above circumstances, the utility model provides a be used for brilliant support of buddha's warrior attendant wire-electrode cutting semiconductor monocrystalline silicon piece integral type, this crystalline support set up to the integral type structure has ensured higher cutting accuracy and is equipped with the water conservancy diversion hole on brilliant support, can realize passing of air, cutting fluid and reduce the impact that cutting fluid held in the palm to silicon rod, brilliant, has promoted the heat exchange again, helps holding in the palm, losing of thermal on the silicon rod to brilliant in the cutting process, reduces the deformation that arouses because of the cutting heat.
The integrated crystal support for the diamond wire-electrode cutting semiconductor monocrystalline silicon wafer comprises an I-shaped frame and is characterized in that a bonding table is arranged at the top of the I-shaped frame, clamping portions are arranged on two transverse sides of the bottom of the I-shaped frame, and a plurality of flow guide holes are formed in the middle of the I-shaped frame at intervals.
The technical scheme has the beneficial effects that:
(1) The crystal support is arranged into an integrated structure, so that high cutting precision is ensured, and the crystal support is provided with the flow guide holes, so that the air and the cutting liquid can penetrate through the crystal support, the impact of the cutting liquid on the silicon rod and the crystal support is reduced, the heat exchange is promoted, the crystal support and the heat dissipation on the silicon rod in the cutting process are facilitated, and the deformation caused by cutting heat is reduced;
(2) In the scheme, the clamping inclined plane and the inclined iron are arranged to be matched with each other, so that the contact area between the I-shaped frame and the inclined iron is increased, the static friction resistance between the I-shaped frame and the inclined iron is increased, a better fastening effect is provided, and higher cutting precision is ensured;
(3) The I-shaped frame is provided with the positioning hole, and the suspension rod is matched with the positioning hole in the subsequent degumming process, so that the effect of positioning the I-shaped frame on the degumming box can be quickly realized, and the production efficiency is improved;
(4) The I-shaped frame is provided with the guide holes, the positioning holes and the guide grooves, so that on one hand, the whole weight of the crystal support is reduced, and on the other hand, the better transfer effect on cutting heat in the cutting process is realized.
Drawings
FIG. 1 is a schematic view illustrating a silicon rod of the present invention bonded to an I-shaped frame;
fig. 2 is an overall schematic view of the silicon rod cutting device according to the present invention;
FIG. 3 is a schematic view of the installation relationship between the workbench and the I-shaped frame of the present invention;
FIG. 4 is a schematic view of the overall structure of the crystal support of the present invention;
FIG. 5 is a schematic view of the whole cutting line of the silicon rod;
fig. 6 is the overall schematic diagram of the crystal support and the degumming box of the utility model when being matched.
Detailed Description
The foregoing and other technical matters, features and effects of the present invention will be apparent from the following detailed description of the embodiments with reference to the accompanying drawings in which fig. 1 to 6 are attached, and the structural matters in the embodiments are all referred to in the following description.
when the device is used specifically, firstly, a worker fixes a crystal support on a workbench of a diamond wire cutting machine (the worker clamps and fixes the I-shaped frame 2 on the workbench of the diamond wire cutting machine through clamping parts arranged on the two transverse sides of the bottom of the I-shaped frame 2), so that the I-shaped frame 2 is clamped and positioned (the I-shaped frame 2 is firmly fixed relative to the workbench of the diamond wire cutting machine), and after the crystal support (the I-shaped frame 2) is installed, the worker seals a box body of the diamond wire cutting machine (a sealing box is arranged outside the diamond wire cutting machine to ensure that waste chips and cutting liquid in the cutting process are splashed to the outside, and meanwhile, the effect of safety protection on the worker is achieved);
then, the worker starts the diamond wire cutting machine (the diamond wire cutting machine adopts the mode of the one-way circulation or the reciprocating circulation motion of the diamond wire 10 to form the relative grinding motion between the diamond wire 10 and the cut object, so as to realize the cutting purpose), and the silicon rod 12 on the workbench is cut, and the working principle is as follows: the wire winding drum rotating at high speed and rotating in a reciprocating manner drives the diamond wire 10 to reciprocate, the diamond wire 10 is tensioned by two tensioning wire wheels 11, and the working table is automatically controlled to continuously feed towards the control table of the diamond wire 10, or the control table of the diamond wire 10 is controlled to continuously feed towards the working table, so that the diamond wire 10 and the cut object are ground to form a cut, as shown in fig. 5, a state diagram of the diamond wire 10 cutting a silicon rod 12 is shown, and only a state diagram of the diamond wire 10 cutting the silicon rod 12 is shown in fig. 5, and other relevant parts such as the wire winding drum in the diamond wire cutting machine are not shown (as the prior art, and the state diagram is not an improvement point of the scheme, so detailed description is not provided again), note that: in the process that the silicon rod 12 is cut by the diamond wire 10, water-based cutting fluid is needed to be used for carrying out silicon powder, silicon slag and diamond particles separated from a steel wire, wherein the silicon powder, the silicon slag and the diamond particles are generated by cutting, the diamond particles are electroplated on the surface of the steel wire, and the diamond particles generate collision, cutting and friction on the silicon rod of the single crystal along with the reciprocating motion of the steel wire, so that the cutting effect is achieved, and meanwhile, the cutting fluid can absorb high-temperature heat generated in the cutting process and dissipate the heat outwards;
as shown in fig. 4, a plurality of flow guide holes 6 are formed in the middle of the i-shaped frame 2 (the flow guide holes 6 are uniformly distributed on the i-shaped frame 2), and the plurality of flow guide holes 6 allow air in the cutting chamber and cutting fluid poured on the silicon rod 12 to pass through the flow guide holes 6 during the cutting process of the silicon rod 12, so as to reduce the impact of the cutting fluid on the silicon rod 12 and the crystal support, and facilitate heat exchange (more heat is generated by friction between the diamond wire 10 and the silicon rod 12 during the cutting process) due to the air and the cutting fluid passing through the flow guide holes 6, thereby preventing the silicon rod 12 from being deformed due to the fact that the heat generated by cutting cannot be well and rapidly transferred outwards, and simultaneously, the plurality of flow guide holes 6 help to reduce the weight of the crystal support (i-shaped frame 2), and facilitate the operation of a worker.
In embodiment 2, based on embodiment 1, after the silicon rod 12 is cut, a plurality of silicon wafers cut into pieces are still on the bonding table 8 bonded to the i-shaped frame 2 by the bonding glue 13, and at this time, the cut silicon wafers need to be taken off from the wafer support (i-shaped frame 2), and then the silicon wafers need to be subjected to degumming treatment, which includes the following steps:
as shown in fig. 4, a positioning hole 7 penetrating through the i-shaped frame 2 is arranged between two adjacent flow guide holes 6, and further includes a suspension rod 14 used in cooperation with the positioning hole 7, the suspension rod 14 is provided with a degumming tank 15 in cooperation (degumming liquid is stored in the degumming tank 15), a positioning groove 16 matched with the suspension rod 14 is arranged at the upper end of the degumming tank 15, when a degumming procedure is performed, a worker only needs to insert the suspension rod 14 into the positioning hole 7 and place two ends of the suspension rod 14 into the positioning groove 16 (as shown in fig. 4), at this time, the silicon rod 12, the bonding glue 13 and the bonding table 8 are immersed in the degumming liquid (hot water), the degumming liquid needs to be at a proper temperature, if the temperature is low and the bonding glue 13 is not completely softened, the silicon wafer cannot automatically fall off from the bonding table 8 (the worker also needs to manually take the silicon wafer off from the bonding table 8 with force, the silicon wafer is very easy to break, the water temperature is generally controlled within a range of 70 ± 10 ℃, and a good degumming effect can be achieved.
the staff places the I-shaped frame 2 that will bond with silicon rod 12 on being located the base 1 between the I-shaped frame 3 of both sides, and then moves towards the direction that is close to I-shaped frame 2 through revolving to twist the screw rod afterwards to make the I-shaped frame 3 contradict on the clamping part of locating the horizontal both sides in I-shaped frame 2 bottom towards I-shaped frame 2 one side, thereby realize the location to I-shaped frame 2, press from both sides tightly, make I-shaped frame 2 fix on diamond wire cut electrical discharge machining's workstation.
Embodiment 4, on the basis of embodiment 3, as shown in fig. 1, the clamping portion includes clamping inclined surfaces 5 which are arranged on two lateral sides of the bottom of the i-shaped frame 2 and are matched with the inclined iron 3, and after the i-shaped frame 2 is clamped and positioned, as shown in fig. 2, the inclined surfaces of the inclined iron 3 and the clamping inclined surfaces 5 are in contact with each other, so that the contact area between the i-shaped frame 2 and the inclined iron 3 is increased, and the frictional resistance is increased, so that the i-shaped frame 2 is clamped and positioned more firmly and stably.
as shown in fig. 4, the i-shaped frame 2 is provided with sliding grooves 9 on both sides of the bonding table 8, and the wafer holder (i-shaped frame 2) on which the single crystal silicon rod 12 is bonded in a sliding manner is moved to the worktable in the cutting chamber of the diamond wire cutting machine by means of the upper rod trolley, since the single crystal silicon rod 12 is heavy (generally, the weight is about 10-15 kg), it is hard to move the single crystal silicon rod 12 to the worktable of the diamond wire cutting machine by manual handling, the upper rod trolley is provided with a sliding rail matched with the sliding groove 9 (the sliding groove 9 is clamped with the sliding rail and the contact surface of the sliding rail is covered with a smooth material with a small friction coefficient), so that the wafer holder on which the single crystal silicon rod 12 is bonded is reversed and matched with the sliding rail on the upper rod trolley (which is equivalent to make the wafer bracket on the sliding rail of the upper rod trolley), and then the worktable moves to the position near the diamond wire cutting machine (adjust the height of the upper rod trolley so that the end of the wafer holder provided with the clamping portion is adjusted to be flush with the diamond wire cutting machine and the sliding rail moves to the working table of the diamond wire cutting machine along the clamping direction of the diamond wire cutting machine, and then the wafer holder is positioned on the diamond wire cutting machine by the working table.
The above description is only for the purpose of illustration, and it should be understood that the present invention is not limited to the above embodiments, and various modifications conforming to the spirit of the present invention are within the scope of the present invention.
Claims (6)
1. The utility model provides a be used for buddha's warrior attendant wire-electrode cutting semiconductor monocrystalline silicon piece integral type brilliant support, is equipped with bonding platform (8) including I shape frame (2) and I shape frame (2) top, its characterized in that, the horizontal both sides in I shape frame (2) bottom are equipped with clamping part, are located the interval of I shape frame (2) mid portion position is equipped with a plurality of water conservancy diversion holes (6).
2. The integrated crystal support for the diamond wire cutting semiconductor monocrystalline silicon piece according to claim 1, wherein a positioning hole (7) penetrating through the I-shaped frame (2) is formed between two adjacent guide holes (6), the integrated crystal support further comprises a suspension rod (14) used in cooperation with the positioning hole (7), the suspension rod (14) is provided with a degumming box (15) in cooperation, and a positioning groove (16) corresponding to the suspension rod (14) is formed in the upper end of the degumming box (15).
3. The integrated crystal support for the diamond wire cutting semiconductor monocrystalline silicon piece according to claim 1, further comprising a clamping mechanism matched with the clamping part, wherein the clamping mechanism comprises a base (1), inclined irons (3) slidably mounted on the base (1) are arranged on the base (1) at intervals, and clamping screws (4) matched with the base (1) in a threaded manner are rotatably mounted on the inclined irons (3).
4. A silicon single crystal holder for a diamond wire-electrode cutting semiconductor single-crystal silicon wafer as claimed in claim 3, characterized in that the clamping portion comprises clamping inclined planes (5) which are arranged at two sides of the transverse bottom of the I-shaped frame (2) and matched with the inclined iron (3).
5. A diamond wire cut semiconductor single-crystal silicon wafer integrated crystal holder as claimed in claim 4, characterized in that the inclined plane inclination angle of the matched side of the clamping inclined plane (5) and the inclined iron (3) is 6-15 °.
6. The integrated crystal support for the diamond wire-electrode cutting semiconductor monocrystalline silicon piece according to claim 5, wherein a penetrating air guide groove (17) is formed in the bottom of the I-shaped frame (2) between the two clamping inclined planes (5) in a longitudinally extending mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221169523.5U CN217862155U (en) | 2022-05-16 | 2022-05-16 | Integrated crystal support for diamond wire cutting semiconductor monocrystalline silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221169523.5U CN217862155U (en) | 2022-05-16 | 2022-05-16 | Integrated crystal support for diamond wire cutting semiconductor monocrystalline silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217862155U true CN217862155U (en) | 2022-11-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221169523.5U Active CN217862155U (en) | 2022-05-16 | 2022-05-16 | Integrated crystal support for diamond wire cutting semiconductor monocrystalline silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217862155U (en) |
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2022
- 2022-05-16 CN CN202221169523.5U patent/CN217862155U/en active Active
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