CN217847986U - Solar cell module - Google Patents

Solar cell module Download PDF

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CN217847986U
CN217847986U CN202222046723.8U CN202222046723U CN217847986U CN 217847986 U CN217847986 U CN 217847986U CN 202222046723 U CN202222046723 U CN 202222046723U CN 217847986 U CN217847986 U CN 217847986U
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transport layer
oxide
isolation
hole transport
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不公告发明人
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Hangzhou Microquanta Semiconductor Co ltd
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Hangzhou Microquanta Semiconductor Co ltd
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Abstract

The utility model relates to a solar cell module, which comprises an upper substrate, a light active layer and a lower substrate, wherein upper partition grooves are respectively arranged between the bottom surface of the upper substrate and the top surface of the light active layer at intervals, and an upper electrode layer, an upper electron transmission layer, an upper isolation layer and an upper cavity transmission layer are respectively stacked between two adjacent upper partition grooves; the bottom surface of the lower substrate and the bottom surface of the optical activity layer are respectively provided with lower partition grooves at intervals, a lower electrode layer, a lower electron transport layer, a lower isolation layer and a lower hole transport layer are respectively stacked between two adjacent lower partition grooves, and the upper electron transport layer, the upper isolation layer, the upper hole transport layer and the upper partition grooves are respectively arranged opposite to the lower hole transport layer, the lower partition grooves, the lower electron transport layer and the lower isolation layer and are respectively arranged symmetrically with the optical activity layer. The utility model discloses reduce the physics of manufacturing process and cut off the number of times, improve production efficiency, improve solar module's stability.

Description

Solar cell module
Technical Field
The utility model belongs to the technical field of solar module prepares, in particular to solar module.
Background
The existing structural scheme of the solar cell module needs to carry out physical partition treatment for many times in the production process, thereby not only increasing the production time, but also reducing the production efficiency; meanwhile, the increased process steps can cause the reduction of yield and the increase of cost; in addition, especially for environmentally sensitive materials, excessive environmental exposure can severely compromise the performance of the material, ultimately degrading the performance of the battery assembly. Therefore, it is necessary to optimally design the structure of the solar cell module.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a solar module of new construction is provided, simplifies manufacturing process, reduces the physics of manufacturing process and cuts off the number of times, and reduce cost reduces the sensitive material of environment and exposes risk in the environment, improves production efficiency, improves solar module's stability.
The utility model discloses a realize like this, a solar cell module is provided, including last basement and lower basement and set up at last basement and the light activity layer between the basement down, separate to set up between the bottom surface of last basement and the top surface on light activity layer and cut off the slot respectively at intervals, cut off the electrode layer on the range upon range of setting up respectively between the slot on adjacent two, go up the electron transport layer, go up isolation layer and last hole transport layer, wherein, it is one deck alone and its top surface contacts with the bottom surface of last basement to go up the electrode layer, go up the electron transport layer, it is located another layer to go up isolation layer and last hole transport layer and arrange side by side simultaneously, and lie in between the bottom surface of last electrode layer and the top surface of active layer simultaneously, go up the electron transport layer and go up the hole transport layer and be separated by last wall slot and last isolation layer respectively in turn; the bottom electrode layer is a layer and the bottom surface of the bottom substrate is contacted with the top surface of the bottom substrate, the lower electron transport layer, the lower isolation layer and the lower hole transport layer are arranged in parallel on another layer and are arranged between the top surface of the bottom electrode layer and the bottom surface of the active layer, the lower electron transport layer and the lower hole transport layer are alternately and respectively spaced by the lower isolation grooves and the lower isolation layer, meanwhile, the upper electron transport layer, the upper isolation layer, the upper hole transport layer and the upper isolation grooves are respectively arranged opposite to the lower hole transport layer, the lower isolation grooves, the lower electron transport layer and the lower isolation layer and are respectively and symmetrically arranged with the optical activity layer, and the upper isolation grooves and the lower isolation grooves can be filled with isolation materials or not filled with isolation materials.
Further, the preparation materials of the upper substrate and the lower substrate are any one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI) and stainless steel foil.
Furthermore, the preparation materials of the upper electrode layer and the lower electrode layer are any one of Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), copper, aluminum, silver and gold respectively.
Further, the preparation materials of the upper electron transport layer and the lower electron transport layer are respectively titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium sesquioxide, tungsten oxide, cerium oxide and C 60 、C 70 And PCBM, the preparation materials of the upper hole transport layer and the lower hole transport layer are respectively any one of copper phthalocyanine, cobalt phthalocyanine, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT, poly-TPD and Spiro-MeOTAD, and the preparation materials of the upper isolation layer and the lower isolation layer are respectively any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matters, or are respectively any one of magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride and carbon materials.
Further, the partition material is any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matter, or any one of magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride and carbon material.
Further, the widths of the upper isolation layer, the lower isolation layer, the upper partition groove and the lower partition groove are respectively 30 nanometers-1 micrometer.
Further, the photoactive layer is a perovskite active layer, the perovskite active layer is prepared by using a perovskite crystal material, and the perovskite crystal material is an ABX 3 A crystalline material of type structure wherein A is methylamino (CH) 3 NH 3 + ) Formamidino (CH (NH)) 2 ) 2 + ) Cesium (Cs) + ) Any one of univalent cations, B is bivalent lead ion (Pb) 2+ ) Or stannous ion (Sn) 2+ ) X is Cl - 、Br - 、I - Any one of halogen anions.
Compared with the prior art, the utility model discloses a solar module has carried out optimal design to the structure of electrode and transmission layer, sets up electron transmission layer, isolation layer, hole transport layer, wall slot respectively side by side on the coplanar, provides one kind can continuous processing, reduces the new construction of solar module that the air exposes. The utility model discloses simplify manufacturing process, reduce the physics of manufacturing process and cut off the number of times, reduce cost, reduce the sensitive material of environment and expose risk in the environment, promoted solar module's production efficiency greatly, avoided the continuous production in-process, the technology that laser etching leads to is unstable to promote the stability of subassembly, realized the solar module's of large tracts of land, high efficiency and high stability fast preparation.
Drawings
Fig. 1 is a schematic view of an internal structure of a solar cell module according to a preferred embodiment of the present invention.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a preferred embodiment of the solar cell module of the present invention includes an upper substrate 1, a lower substrate 2, and a photoactive layer 3 disposed between the upper substrate 1 and the lower substrate 2.
Upper partition grooves 4 are respectively provided at intervals between the bottom surface of the upper substrate 1 and the top surface of the photoactive layer 3. An upper electrode layer 5, an upper electron transport layer 6, an upper isolation layer 7 and an upper hole transport layer 8 are respectively stacked between two adjacent upper partition trenches 4. Wherein the upper electrode layer 5 is a single layer and the top surface thereof is in contact with the bottom surface of the upper substrate 1, and the upper electron transport layer 6, the upper isolation layer 7 and the upper hole transport layer 8 are simultaneously juxtaposed in another layer and are simultaneously located between the bottom surface of the upper electrode layer 5 and the top surface of the active layer 3. The upper electron transport layers 6 and the upper hole transport layers 8 are alternately spaced apart by the upper partition trenches 4 and the upper isolation layers 7, respectively.
Lower partition grooves 9 are provided at intervals between the top surface of the lower substrate 2 and the bottom surface of the photoactive layer 3, respectively. A lower electrode layer 10, a lower electron transport layer 11, a lower isolation layer 12, and a lower hole transport layer 13 are respectively stacked between two adjacent lower partition trenches 9. Wherein the lower electrode layer 10 is a single layer and the bottom surface thereof is in contact with the top surface of the lower substrate 2, and the lower electron transport layer 11, the lower isolation layer 12 and the lower hole transport layer 13 are simultaneously juxtaposed in another layer and are simultaneously located between the top surface of the lower electrode layer 10 and the bottom surface of the active layer 3. The lower electron transport layer 11 and the lower hole transport layer 13 are alternately spaced apart by the lower partition trench 9 and the lower isolation layer 12, respectively. Meanwhile, the upper electron transport layer 6, the upper isolation layer 7, the upper hole transport layer 8 and the upper partition groove 4 are respectively arranged opposite to the lower hole transport layer 13, the lower partition groove 9, the lower electron transport layer 11 and the lower isolation layer 12 and are respectively arranged symmetrically with the optical active layer 3.
The upper partition groove 4 and the lower partition groove 9 may or may not be filled with a partition material. The partition material is any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matters, or any one of magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride and carbon materials.
The preparation materials of the upper substrate 1 and the lower substrate 2 are any one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI) and stainless steel foil.
The upper electrode layer 5 and the lower electrode layer 10 are made of any one of Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), copper, aluminum, silver, and gold.
The upper electron transmission layer 6 and the lower electron transmission layer 11 are respectively made of titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium oxide, tungsten oxide, cerium oxide and C 60 、C 70 And PCBM.
The preparation materials of the upper hole transport layer 8 and the lower hole transport layer 13 are respectively any one of copper phthalocyanine cyanide, cobalt phthalocyanine cyanide, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT, poly-TPD, and Spiro-MeOTAD.
The preparation materials of the upper isolation layer 7 and the lower isolation layer 12 are respectively any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matters, or respectively any one of magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride and carbon materials.
The widths of the upper isolation layer 7, the lower isolation layer 12, the upper partition groove 4 and the lower partition groove 9 are respectively 30 nanometers-1 micrometer.
The optical active layer 3 is a perovskite active layer, the perovskite active layer is prepared by using a perovskite crystal material, and the perovskite crystal material is ABX 3 A crystalline material of type structure wherein A is methylamino (CH) 3 NH 3 + ) Formamidino group (a)CH(NH 2 ) 2 + ) Cesium (Cs) + ) Any one of univalent cations, B is bivalent lead ion (Pb) 2+ ) Or stannous ion (Sn) 2+ ) X is Cl - 、Br - 、I - Any one of halogen anions.
The perovskite crystal material is also doped with an ion dopant which is a guanidinium cation (C (NH) 2 ) 3 + ) Butylamine based Cation (CH) 3 (CH 2 ) 3 NH 3 + ) Phenylethylamine cation (C) 6 H 5 (CH 2 ) 2 NH 3 + ) At least one of lithium, sodium, potassium, rubidium, boron, silicon, germanium, arsenic, antimony, beryllium, magnesium, calcium, strontium, barium, aluminum, indium, gallium, tin, thallium, lead, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, silver, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or thiocyanate (SCN) - ) Acetic acid radical (CH 3 COO) - ) Formate (HCOO) - ) Tetrafluoroborate (BF) 4 - ) And phosphate radical (PO) 4 - ) At least one of them.
The utility model also discloses a preparation method as before of solar module, including following step:
step one, selecting a proper upper substrate 1 material.
And secondly, depositing and preparing an upper electrode layer 5 on the surface of the upper substrate 1, respectively and alternately depositing an upper electron transport layer 6, an upper isolation layer 7, an upper hole transport layer 8 and an upper isolation layer 7 on the surface of the upper electrode layer 5, wherein the upper electron transport layer 6, the upper isolation layer 7 and the upper hole transport layer 8 are arranged in parallel on the surface of the upper electrode layer 6.
And step three, preparing upper isolating grooves 4 in the areas where the adjacent upper isolating layers 7 are located at intervals of one upper isolating layer 7. The upper isolation trench 4 simultaneously cuts off the upper isolation layer 7 and the upper electrode layer 5, and the upper substrate 1 is exposed at the bottom of the upper isolation trench 4. The upper partition groove 4 may be filled with or without a partition material. If the upper partition groove 4 is filled with the partition material, the height of the filled partition material is not more than the height of the upper electron transport layer 6 and the upper hole transport layer 8 on the side surface where the upper partition groove is located. The upper electron transport layers 6 and the upper hole transport layers 8 are alternately spaced apart by the upper partition trenches 4 and the upper isolation layers 7, respectively.
And step four, depositing the photoactive layer 3 on the surfaces of the upper electron transport layer 6, the upper isolation layer 7, the upper hole transport layer 8 and the upper partition groove 4 to obtain the upper half cell assembly.
And step five, repeating the step two to the step four on the surface of the selected lower substrate 2, and sequentially preparing a lower electrode layer 10, a lower electron transport layer 11, a lower isolation layer 12, a lower hole transport layer 13, a lower partition groove 9 and a photoactive layer 3 to obtain a lower half cell assembly.
And step six, respectively laminating the upper half cell assembly and the lower half cell assembly prepared in the step four and the step five together, so that the photoactive layer of the upper half cell assembly and the photoactive layer of the lower half cell assembly are mutually attached, and the upper electron transport layer 6, the upper isolation layer 7, the upper cavity transport layer 8 and the upper partition groove 4 are respectively arranged opposite to the lower cavity transport layer 13, the lower partition groove 9, the lower electron transport layer 11 and the lower isolation layer 12 and are respectively symmetrically arranged by the photoactive layers, thereby completing the preparation of the whole solar cell assembly.
In the fourth step, the method further comprises the step of passivating the surface of the prepared photoactive layer 3. The purpose of the passivation treatment is to passivate defects on the surface of the photoactive layer 3.
The utility model discloses an among the solar module's the preparation method, only need set up once physics and cut off (cut off slot or cut off the slot down in preparing promptly), and generally need P1, P2 and P3 in current solar module's the preparation in-process totally cubic physics to cut off, so, the utility model discloses a method has greatly reduced physics and has cut off the number of times, has not only reduced production time, has reduced manufacturing cost, has improved production efficiency, but also reduces the sensitive material of environment and exposes risk in the environment, improves solar module's stability.
On the other hand, in the structure of the solar cell module of the utility model, the electron transport layer, the isolation layer and the hole transport layer are respectively arranged on the same plane side by side and are located the electrode layer surface, and the isolation groove is arranged to isolate the electrode layer, so that the solar cell module can be easily prepared in a large area and rapidly.
In addition, the materials for preparing the upper electrode layer 5, the upper electron transport layer 6, the upper isolation layer 7, and the upper hole transport layer 8 may be the same as or different from the materials for preparing the lower electrode layer 10, the lower electron transport layer 11, the lower isolation layer 12, and the lower hole transport layer 13. The material for preparing the photoactive layer 3 of the upper half cell assembly and the photoactive layer 3 of the lower half cell assembly can be the same or different. The preparation materials of the upper partition groove 4 and the lower partition groove 9 can be the same or different. The materials for preparing the upper isolation layer 7 and the lower isolation layer 12 can be the same or different.
The following further illustrates a method for manufacturing a solar cell module according to the present invention by using specific examples.
Example 1
The utility model discloses an embodiment of a preparation method of solar module, including following step:
and 11, respectively cleaning the PEN and the stainless steel foil substrate, and carrying out ultraviolet ozone treatment for 20 minutes.
And step 12, sputtering AZO as an electrode material on the surface of the clean PEN and stainless steel foil substrate every 100 nanometers-100 micrometers by using a mask plate, and using the discontinuous area as a partition layer.
And step 13, depositing an electron transport layer and a hole transport layer on the surface of the AZO electrode at intervals in sequence by using another mask plate. The electron transport layer is formed by depositing C60 with the thickness of 30 nanometers through thermal evaporation, the hole transport layer is formed by preparing a PTAA thin layer with the thickness of 10 nanometers through thermal spraying, the interval between the electron transport layer and the hole transport layer is 100 nanometers-100 micrometers, and the interval area serves as an isolation layer. The width of the isolation layer is the same as that of the partition layer.
Step 14, evaporating the MAI and the Pbbr on the PEN substrate processed in the steps 11 to 13 by three-source heat 2 And PbI 2 Preparation of perovskite MApB (I) with thickness of 200 nm 0.8 br 0.2 ) 3 And (4) a photoactive layer to obtain an upper half cell assembly. Depositing perovskite FAPBI on the stainless steel foil substrate treated in the steps of 11-13 3 And coating the prepared perovskite precursor solution by using a hot air blowing auxiliary slit, wherein the amounts of formamidine hydroiodide and lead iodide are equal, the solution is dissolved in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide with the volume ratio of 4:1, the concentration of the lead iodide is 80.6mol/L, after the solution is completely dissolved, the chloromethane with the molar ratio of 40% is added, and annealing is carried out at 150 ℃ for 10min to prepare a perovskite photoactive layer with the thickness of 300nm, so as to obtain a lower half cell component.
And step 15, respectively passivating the surfaces of the perovskite light active layers prepared on the two substrates, and evaporating 1 nanometer LiF.
And step 16, stacking the perovskite light active layers processed in the steps in a face-to-face mode, wherein the electron transport layers and the hole transport layers of the upper half cell assembly and the lower half cell assembly correspond to each other from top to bottom, and the isolation layers and the partition layers also correspond to each other from top to bottom. The preparation of the whole battery is completed.
Example 2
The embodiment of the second method for manufacturing a solar cell module of the present invention includes the following steps:
and step 21, respectively cleaning the two ultra-white glass substrates, and carrying out ultraviolet ozone treatment for 30 minutes.
And step 22, respectively sputtering ITO (indium tin oxide) on the surfaces of the two clean ultra-white glass substrates to be used as electrode materials.
And 23, depositing an electron transport layer, an isolation layer and a hole transport layer on the surface of the ITO electrode in sequence and alternately by using a mask plate. The electron transport layer adopts a tin dioxide compact layer with the thickness of 30 nanometers through spray pyrolysis deposition, the hole transport layer adopts a nickel oxide thin layer with the thickness of 20 nanometers through thermal spraying, and the isolation layer adopts a zinc sulfide layer with the thickness of 30 nanometers through magnetron sputtering.
And 24, isolating the area where the adjacent isolating layer is located at intervals of one isolating layer, and removing ITO (indium tin oxide) and isolating layer materials on the ultra-white glass substrate by adopting laser etching to obtain isolating grooves, wherein the bottoms of the isolating grooves are exposed out of the substrate.
Step 25, depositing the perovskite Cs on the substrate processed in the steps 21 to 24 0.05 (FA 0.9 MA 0.1 ) 0.95 PbI 3 And continuously coating the prepared perovskite precursor solution in a slit, vacuumizing to remove the solvent, quickly nucleating, heating at 150 ℃ for 60 minutes to prepare a 600 nm-thick perovskite photoactive layer, and respectively obtaining an upper half cell assembly and a lower half cell assembly.
And 26, passivating the surfaces of the perovskite light active layers prepared on the two substrates respectively, and depositing 3-nanometer MACl.
And 27, stacking the perovskite light active layers processed in the steps in an opposite mode, enabling the electron transport layers and the hole transport layers of the upper half cell assembly and the lower half cell assembly to be in up-down one-to-one correspondence, enabling the isolation layers and the isolation grooves to be in up-down one-to-one correspondence, and heating for 10 minutes in an oven at 120 ℃. The preparation of the whole battery is completed.
Example 3
The utility model discloses an embodiment of third solar module's preparation method, including following step:
and 31, respectively cleaning the two ultra-white glass substrates, and carrying out ultraviolet ozone treatment for 30 minutes.
And 32, respectively sputtering FTO as electrode materials on the surfaces of the two clean ultra-white glass substrates.
And step 33, depositing an electron transport layer, an isolation layer and a hole transport layer on the surface of the FTO electrode in sequence and alternately by using a mask plate. Wherein, the electron transport layer adopts a chemical water bath to deposit a titanium dioxide compact layer with the thickness of 40 nanometers, and the hole transport layer adopts CuCrO coated with the thickness of 40 nanometers 2 And the isolating layer is prepared into polyvinyl butyral resin with the thickness of 200 nanometers by adopting screen printing.
And step 34, performing partition treatment on the areas where the adjacent isolation layers are located at intervals, removing FTO and isolation layer materials on the ultra-white glass substrate by adopting laser etching to obtain partition grooves, exposing the substrate at the bottoms of the partition grooves, and filling polyvinyl butyral resin into the partition grooves.
Step 35, depositing perovskite FA on the substrate processed in the steps 31 to 34 0.6 MA 0.4 Pb 0.4 Sn 0.6 I 3 And continuously coating the prepared perovskite precursor solution in a slit, immersing the solution into an ether solvent, quickly nucleating, and heating at 100 ℃ for 10 minutes to prepare a 600 nm-thick perovskite photoactive layer, thereby respectively obtaining an upper half cell assembly and a lower half cell assembly.
And step 36, stacking the perovskite photoactive layers processed in the steps face to face, wherein the electron transport layers and the hole transport layers of the upper half cell assembly and the lower half cell assembly correspond to each other up and down, and the isolation layers and the isolation grooves correspond to each other up and down. The whole battery was completed.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principles of the present invention should be included within the scope of the present invention.

Claims (7)

1. A solar cell module is characterized by comprising an upper substrate, a lower substrate and a light active layer arranged between the upper substrate and the lower substrate, wherein upper partition grooves are respectively arranged between the bottom surface of the upper substrate and the top surface of the light active layer at intervals; the bottom electrode layer is a single layer, the bottom surface of the single layer is in contact with the top surface of the lower substrate, the lower electron transport layer, the lower isolation layer and the lower hole transport layer are arranged in parallel on the other layer, the lower electron transport layer and the lower hole transport layer are arranged between the top surface of the lower electrode layer and the bottom surface of the active layer, the lower electron transport layer and the lower hole transport layer are alternately and respectively spaced by the lower isolation grooves and the lower isolation layer, meanwhile, the upper electron transport layer, the upper isolation layer and the upper hole transport layer are respectively arranged opposite to the upper isolation grooves and the lower hole transport layer, the lower isolation grooves, the lower electron transport layer and the lower isolation layer and are respectively and symmetrically arranged with the optical active layer, and the upper isolation grooves and the lower isolation grooves are filled with or not filled with isolation materials.
2. The solar cell module according to claim 1, wherein the upper substrate and the lower substrate are made of any one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), and stainless steel foil, respectively.
3. The solar cell module according to claim 1, wherein the upper electrode layer and the lower electrode layer are made of any one of Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), copper, aluminum, silver, and gold, respectively.
4. The solar cell module of claim 1, wherein the upper electron transport layer and the lower electron transport layer are made of materials of titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium oxide, tungsten oxide, cerium oxide, and C 60 、C 70 And PCBM, the preparation materials of the upper hole transport layer and the lower hole transport layer are respectively any one of copper phthalocyanine cyanide, cobalt phthalocyanine cyanide, nickel phthalocyanine, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT, poly-TPD and Spiro-MeOTAD, and the preparation materials of the upper isolation layer and the lower isolation layer are respectively polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalateThe material is any one of tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matters, or any one of magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride and carbon materials.
5. The solar cell module according to claim 1, wherein the blocking material is any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride, polyamide organic matter, or any one of magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4, boron nitride, and carbon material.
6. The solar cell module according to claim 1, wherein the widths of the upper and lower isolation layers and the upper and lower partition trenches are respectively 30 nm to 1 μm.
7. The solar module of claim 1, wherein the photoactive layer is a perovskite active layer, the perovskite active layer being prepared using a perovskite crystalline material, the perovskite crystalline material being one having ABX 3 A crystal material of a type structure wherein A is methylamino (CH) 3 NH 3 + ) Formamidino (CH (NH) 2 ) 2 + ) Cesium (Cs) + ) Any one of univalent cations, B is divalent lead ion (Pb) 2+ ) Or stannous ion (Sn) 2+ ) X is Cl - 、Br - 、I - Any one of halogen anions.
CN202222046723.8U 2022-08-04 2022-08-04 Solar cell module Active CN217847986U (en)

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