CN214123910U - Novel perovskite photoelectric component - Google Patents

Novel perovskite photoelectric component Download PDF

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CN214123910U
CN214123910U CN202120308077.0U CN202120308077U CN214123910U CN 214123910 U CN214123910 U CN 214123910U CN 202120308077 U CN202120308077 U CN 202120308077U CN 214123910 U CN214123910 U CN 214123910U
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不公告发明人
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Hangzhou Microquanta Semiconductor Corp ltd
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Abstract

The utility model relates to a novel perovskite photoelectric component, which comprises an upper half device, a perovskite layer and a lower half device, wherein the upper half device comprises an upper substrate, an upper conductive electrode, an upper electron transmission layer, an upper cavity transmission layer, an upper isolation layer and an upper partition layer, and the lower half device comprises a lower substrate, a lower conductive electrode, a lower electron transmission layer, a lower cavity transmission layer, a lower isolation layer and a lower partition layer; each upper electron transport layer and each lower hole transport layer are respectively arranged in an up-and-down symmetrical mode relative to the perovskite layer, each upper hole transport layer and each lower electron transport layer are respectively arranged in an up-and-down symmetrical mode relative to the perovskite layer, each upper isolation layer and each lower isolation layer are respectively arranged in an up-and-down symmetrical mode relative to the perovskite layer, and each upper isolation layer and each lower isolation layer are respectively arranged in an up-and-down symmetrical mode relative to the perovskite layer. The utility model provides high perovskite photoelectric component's stability has simple process, characteristics such as easily large tracts of land production.

Description

Novel perovskite photoelectric component
Technical Field
The utility model belongs to the technical field of perovskite photoelectric component's preparation, in particular to novel perovskite photoelectric component.
Background
Perovskite is a type of perovskite with the structural formula ABX3The materials of the crystal are collectively called. In the organic halide perovskite structure, A is typically Methylammonium (MA), formazanOrganic halide perovskites of the type having excellent semiconductor properties, such as amidine (FA) and like cations, B being lead, tin and like metal cations, and X being chlorine, bromine, iodine and like anions, have attracted attention in the field of photovoltaic devices.
In the industrial fabrication of large area photovoltaic devices, the active material is usually separated into individual small portions which are connected in series to improve the performance of the entire active area. For the perovskite material, the exposed active side surface after isolation has extremely high reactivity, and the perovskite material is degraded due to contact reaction with water and oxygen in the air; in addition, halogen anions in the perovskite come into contact with the metal electrode, and a chemical reaction occurs to cause a decrease in the conductivity of the metal. Thus, effective isolation of the perovskite material helps to improve device performance and stability.
The patent with publication number CN110534651A discloses a perovskite solar cell and module and a preparation method thereof, wherein materials such as high molecular polymer, oxide, graphene and the like are used as an isolation layer on the cut back side surface of a perovskite thin film and are applied to the perovskite solar cell. However, the method adopts a dispensing method to coat the isolation layer, which has more defects in practical application, for example, the dispensing operation is exposed in the air for a long time, and the perovskite is seriously corroded by water and oxygen; the cutting interval area required by the dispensing method is larger, so that the area of the optical active area is reduced; high-energy ultraviolet rays used for glue curing can cause perovskite degradation; after the glue is cured, the volume of the glue expands or contracts, so that the protective effect on the side face of the perovskite is influenced.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that a novel perovskite photoelectric component is provided, the perovskite thin film has effectually been protected in perovskite photoelectric component's preparation in-process, avoids taking place water oxygen erosion and metal-halide ion's chemical reaction effectively, improves perovskite photoelectric component's stability.
The utility model is realized in such a way, the utility model provides a novel perovskite photoelectric component, including the first device, perovskite layer and the second device that superpose together from top to bottom in proper order, the first device includes last basement, last conductive electrode, go up compound transmission layer, a plurality of upper isolation layer and a plurality of upper partition layer, the second device includes lower basement, lower conductive electrode, lower compound transmission layer, a plurality of lower isolation layer and a plurality of lower partition layer, wherein, lower basement is located the bottommost, lower conductive electrode sets up on lower basement, lower compound transmission layer is located between lower conductive electrode and perovskite layer, lower compound transmission layer includes a plurality of lower electron transmission layers and a plurality of lower hole transmission layers that are located the same layer and set up each other at intervals, adjacent lower electron transmission layer and lower hole transmission layer are separated by lower isolation layer or lower partition layer respectively, adjacent lower isolation layer and lower partition layer are separated by lower electron transmission layer or lower hole transmission layer respectively, each lower isolating layer is arranged between the lower conducting electrode and the perovskite layer, and each lower isolating layer is arranged between the lower substrate and the perovskite layer; correspondingly, the upper substrate, the upper conductive electrode and the upper composite transmission layer are respectively and symmetrically arranged with the lower substrate, the lower conductive electrode and the lower composite transmission layer up and down relative to the perovskite layer, the upper composite transmission layer comprises a plurality of upper electron transmission layers and a plurality of upper cavity transmission layers which are arranged at intervals, each upper electron transmission layer is correspondingly and correspondingly arranged with each lower cavity transmission layer up and down relative to the perovskite layer, each upper cavity transmission layer is correspondingly and correspondingly arranged with each lower electron transmission layer up and down relative to the perovskite layer, each upper isolation layer is correspondingly and correspondingly arranged with each lower isolation layer up and down relative to the perovskite layer, and each upper isolation layer is correspondingly and correspondingly arranged with each lower isolation layer up and down relative to the perovskite layer.
Further, the materials for preparing the upper substrate and the lower substrate are any one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and Polyimide (PI).
Furthermore, the materials for preparing the upper conductive electrode and the lower conductive electrode are any one of Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO) and aluminum-doped zinc oxide (AZO).
Further, the materials for preparing the upper electron transport layer and the lower electron transport layer are respectively titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium sesquioxide, tungsten oxide and tungsten oxideCerium, C60、C70And a PCBM.
Further, the materials for preparing the upper hole transport layer and the lower hole transport layer are respectively any one of copper phthalocyanine cyanide, cobalt phthalocyanine cyanide, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT, Poly-TPD, and Spiro-MeOTAD.
Further, the materials for preparing the upper isolation layer, the upper partition layer, the lower isolation layer and the lower partition layer are respectively any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matters, or magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4Any one of boron nitride and carbon material.
Compared with the prior art, the utility model discloses a novel perovskite photoelectric component has protected the perovskite film effectively in perovskite photoelectric component's preparation process, avoids taking place water oxygen erosion and metal-halide ion's chemical reaction effectively, improves perovskite photoelectric component's stability. The utility model discloses simple process easily large tracts of land production.
Drawings
Fig. 1 is a schematic plan view of the internal structure of a preferred embodiment of the perovskite photovoltaic module of the present invention.
Detailed Description
In order to make the technical problem, technical solution and advantageous effects to be solved by the present invention more clearly understood, the following description is given in conjunction with the accompanying drawings and embodiments to illustrate the present invention in further detail. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1, a preferred embodiment of the perovskite photovoltaic module of the present invention includes an upper device 1, a perovskite layer 2 and a lower device 3 stacked in sequence.
The upper half device 1 includes an upper substrate 11, an upper conductive electrode 12, an upper composite transport layer 13, a plurality of upper isolation layers 14, and a plurality of upper partition layers 15. The lower half device 3 includes a lower substrate 31, a lower conductive electrode 32, a lower composite transport layer 33, a plurality of lower isolation layers 34, and a plurality of lower partition layers 35. Wherein the lower substrate 31 is located at the bottommost portion, and the lower conductive electrode 32 is disposed on the lower substrate 31. The lower composite transmission layer 33 is located between the lower conductive electrode 32 and the perovskite layer 2. The lower recombination transport layer 33 includes a plurality of lower electron transport layers 36 and a plurality of lower hole transport layers 37 which are located at the same layer and spaced apart from each other. The adjacent lower electron transport layer 36 and lower hole transport layer 37 are spaced apart by the lower isolation layer 34 or lower partition layer 35, respectively, and the adjacent lower isolation layer 34 and lower partition layer 35 are spaced apart by the lower electron transport layer 36 or lower hole transport layer 37, respectively. Each lower isolation layer 34 is disposed between the lower conductive electrode 32 and the perovskite layer 2, respectively. Each lower barrier layer 35 is disposed between the lower substrate 31 and the perovskite layer 2, respectively. The lower isolation layer 34 and the lower blocking layer 35 are spaced apart from each other. The lower conductive electrode 32 is partitioned into a plurality of individual small areas by a plurality of lower partition layers 35. The lower isolation layer 34 and the lower blocking layer 35 isolate each of the lower electron transport layer 36 and the lower hole transport layer 37, respectively.
Correspondingly, the upper substrate 11, the upper conductive electrode 12, and the upper composite transmission layer 13 are disposed in upper-lower symmetry with respect to the perovskite layer 2, with the lower substrate 31, the lower conductive electrode 32, and the lower composite transmission layer 33, respectively. The upper composite transport layer 13 includes a plurality of upper electron transport layers 16 and a plurality of upper hole transport layers 17 which are disposed at intervals, each upper electron transport layer 16 is disposed in an up-down symmetrical manner with respect to the perovskite layer 2 correspondingly to each lower hole transport layer 37, respectively, and each upper hole transport layer 17 is disposed in an up-down symmetrical manner with respect to the perovskite layer 2 correspondingly to each lower electron transport layer 36, respectively. Each upper insulating layer 14 is disposed vertically symmetrically with respect to the perovskite layer 2 with respect to each lower insulating layer 35, respectively, and each upper insulating layer 15 is disposed vertically symmetrically with respect to the perovskite layer 2 with respect to each lower insulating layer 34, respectively.
The upper substrate 11 and the lower substrate 31 are made of any one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and Polyimide (PI).
The upper conductive electrode 12 and the lower conductive electrode 32 are made of any one of Indium Tin Oxide (ITO), fluorine-doped tin oxide (FTO), and aluminum-doped zinc oxide (AZO).
The materials for preparing the upper electron transport layer 16 and the lower electron transport layer 36 are titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium oxide, tungsten oxide, cerium oxide, C60、C70PCBM and derivatives and dopants thereof. The thickness of the layer is 5nm to 300 nm.
The material for preparing the upper hole transport layer 17 and the lower hole transport layer 37 is any one of copper phthalocyanine cyanide, cobalt phthalocyanine cyanide, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT, Poly-TPD, Spiro-MeOTAD and dopants thereof. The thickness of the layer is 5nm to 200 nm.
The upper isolation layer 14 and the upper partition layer 15 serve to isolate the upper electron transport layer 16 and the upper hole transport layer 17, and block electrons and holes from being in contact recombination with each other, and they may be the same preparation materials. Similarly, the lower isolation layer 34 and the lower partition layer 35 serve to isolate the lower electron transport layer 36 and the lower hole transport layer 37, and block electrons and holes from contacting and recombining with each other, and they may be the same preparation material.
The materials for preparing the upper isolation layer 14, the upper isolation layer 15, the lower isolation layer 34 and the lower isolation layer 35 are respectively any one of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride and polyamide organic matters, or magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4The width of the inorganic substance is 10 mu m-1 mm, and the thickness of the inorganic substance is not higher than that of the peripheral transmission layer.
The molecular structural formula of the material for preparing the perovskite layer 2 is ABX3Wherein A is methylamino (CH)3NH3 +) Formamidino group（CH(NH2)2 +) Cesium (Cs)+) Any one of monovalent cations, B is lead ion (Pb)2+) Or stannous ion (Sn)2+) X is Cl-、Br-、I-Any one of the halogen anions.
The perovskite layer 2 is further doped with an ionic dopant comprising a guanidinium cation (C (NH)2)3 +) Butylamine radical Cation (CH)3(CH2)3NH3 +) Phenylethylamine cation (C)6H5(CH2)2NH3 +) Any one of organic amine cations, or cations of any one of inorganic elements including lithium, sodium, potassium, rubidium, boron, silicon, germanium, arsenic, antimony, beryllium, magnesium, calcium, strontium, barium, aluminum, indium, gallium, tin, thallium, lead, bismuth, lanthanum, cerium, praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, silver, cadmium, hafnium, tantalum, tungsten, rhenium, osmium, iridium, platinum, gold, or thiocyanate (SCN)-) Or acetate ion (CH3 COO)-)。
The utility model also discloses a preparation method of novel perovskite photoelectric component as aforesaid, including following step:
firstly, an upper half device 1 and a lower half device 3 are respectively prepared, then an upper half perovskite layer 21 and a lower half perovskite layer 22 are respectively prepared on an upper composite transmission layer 13 of the upper half device 1 and a lower composite transmission layer 33 of the lower half device 3, finally, the upper half device 1 and the lower half device 3 which are prepared with the upper half perovskite layer 21 and the lower half perovskite layer 22 are mutually overlapped and laminated together in a face-to-face mode, wherein the upper perovskite layer 21 and the lower perovskite layer 22 are mutually laminated and then mutually fused into a complete perovskite layer 2, and an upper electron transmission layer 16, an upper hole transmission layer 17, an upper isolation layer 14 and an upper isolation layer 15 of the upper half device 1 are sequentially and respectively and vertically symmetrical with a lower hole transmission layer 37, a lower electron transmission layer 36, a lower isolation layer 35 and a lower isolation layer 34 of the lower half device 3 relative to the perovskite layer 2.
The utility model discloses a novel perovskite photoelectric component not only can be used for on the perovskite solar module, can also be applicable to on emitting diode, detector etc. involve perovskite material's device.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.

Claims (6)

1. A novel perovskite photoelectric component is characterized by comprising an upper half device, a perovskite layer and a lower half device which are sequentially stacked up and down, wherein the upper half device comprises an upper substrate, an upper conductive electrode, an upper composite transmission layer, a plurality of upper isolation layers and a plurality of upper partition layers, the lower half device comprises a lower substrate, a lower conductive electrode, a lower composite transmission layer, a plurality of lower isolation layers and a plurality of lower partition layers, the lower substrate is positioned at the bottommost part, the lower conductive electrode is arranged on the lower substrate, the lower composite transmission layer is positioned between the lower conductive electrode and the perovskite layer, the lower composite transmission layer comprises a plurality of lower electron transmission layers and a plurality of lower hole transmission layers which are positioned on the same layer and are arranged at intervals, the adjacent lower electron transmission layers and the lower hole transmission layers are respectively spaced by the lower isolation layers or the lower partition layers, the adjacent lower isolation layers and the lower partition layers are respectively spaced by the lower electron transmission layers or the lower hole transmission layers, each lower isolating layer is respectively arranged between the lower conducting electrode and the perovskite layer, each lower isolating layer is respectively arranged between the lower substrate and the perovskite layer, correspondingly, the upper substrate, the upper conductive electrode and the upper composite transmission layer are respectively and symmetrically arranged with the lower substrate, the lower conductive electrode and the lower composite transmission layer up and down relative to the perovskite layer, the upper composite transmission layer comprises a plurality of upper electron transmission layers and a plurality of upper cavity transmission layers which are arranged at intervals, each upper electron transmission layer is correspondingly and correspondingly arranged with each lower cavity transmission layer up and down relative to the perovskite layer, each upper cavity transmission layer is correspondingly and correspondingly arranged with each lower electron transmission layer up and down relative to the perovskite layer, each upper isolation layer is correspondingly and correspondingly arranged with each lower isolation layer up and down relative to the perovskite layer, and each upper isolation layer is correspondingly and correspondingly arranged with each lower isolation layer up and down relative to the perovskite layer.
2. The novel perovskite photovoltaic module as claimed in claim 1, wherein the upper and lower substrates are made of any one of glass, polyethylene terephthalate (PET), polyethylene naphthalate (PEN) and Polyimide (PI), respectively.
3. The perovskite photovoltaic module as claimed in claim 1, wherein the upper and lower conductive electrodes are made of any one of Indium Tin Oxide (ITO), fluorine doped tin oxide (FTO) and aluminum doped zinc oxide (AZO).
4. The perovskite photovoltaic device of claim 1, wherein the upper and lower electron transport layers are made of titanium dioxide, zinc oxide, cadmium sulfide, tin dioxide, indium oxide, tungsten oxide, cerium oxide, C60、C70And a PCBM.
5. The perovskite photovoltaic device as claimed in claim 1, wherein the upper and lower hole transport layers are made of any one of copper phthalocyanine cyanide, cobalt phthalocyanine cyanide, nickel oxide, vanadium oxide, molybdenum oxide, copper sulfide, cuprous thiocyanate, copper oxide, cuprous oxide, cobalt oxide, PTAA, PEDOT, Poly-TPD, Spiro-MeOTAD, respectively.
6. The perovskite photovoltaic device as claimed in claim 1, wherein the upper barrier layer, the lower barrier layer and the lower barrier layer are made of polymethyl methacrylate, polyvinyl butyral resin, polyethylene naphthalate, polyethylene terephthalate, tetrafluoroethylene copolymer, polyvinylidene fluoride, polyamide organic compoundOr magnesium oxide, aluminum oxide, silicon oxide, zinc sulfide, zirconium acetylacetonate, C3N4Any one of boron nitride and carbon material.
CN202120308077.0U 2021-02-03 2021-02-03 Novel perovskite photoelectric component Active CN214123910U (en)

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