CN217768722U - Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide - Google Patents
Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide Download PDFInfo
- Publication number
- CN217768722U CN217768722U CN202221866800.8U CN202221866800U CN217768722U CN 217768722 U CN217768722 U CN 217768722U CN 202221866800 U CN202221866800 U CN 202221866800U CN 217768722 U CN217768722 U CN 217768722U
- Authority
- CN
- China
- Prior art keywords
- circuit board
- integrated waveguide
- assembly
- gradient
- probe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007704 transition Effects 0.000 title claims description 15
- 239000000523 sample Substances 0.000 claims abstract description 86
- 230000007423 decrease Effects 0.000 claims description 6
- 230000008859 change Effects 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000003786 synthesis reaction Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Landscapes
- Waveguide Aerials (AREA)
Abstract
The utility model discloses a medium integrated waveguide is to excessive broadband millimeter wave power combiner of rectangular waveguide, including rectangular waveguide, first circuit board and second circuit board, first circuit board with the second circuit board all install in rectangular waveguide, first circuit board with the second circuit board all is equipped with signal layer, dielectric layer and ground plane, the dielectric layer is located the signal layer with between the ground plane. The utility model discloses an integrated waveguide of medium is to excessive broadband millimeter wave power combiner of rectangular waveguide, it links through rectangular waveguide, first circuit board and second circuit board to all be equipped with gradual change probe and the integrated waveguide of medium at every circuit board, thereby realize the homophase of uniform amplitude or the reverse phase output of uniform amplitude, and realize the synthesis of power and equally divide through four ports of two circuit boards, have advantages such as bandwidth width, stable in structure and convenient to use.
Description
Technical Field
The utility model belongs to the technical field of millimeter wave power processing, concretely relates to integrated waveguide of medium is to excessive broadband millimeter wave power combiner of rectangular waveguide.
Background
In recent years, SIW (substrate integrated waveguide) has been proposed and rapidly developed. As a novel transmission line structure, the microstrip transmission line integrates the advantages of the traditional rectangular waveguide and the microstrip line, and becomes a favorite at present.
SIW has the advantages of higher quality factor, low radiation loss, easy integration, small volume, light weight, easy processing, etc. Many of the conventional systems adopt conventional rectangular waveguides, and most of the conversions between the conventional waveguides and the integrated circuit adopt coaxial conversion to realize power distribution and synthesis.
With the increase of frequency, the traditional coaxial conversion needs higher and higher processing precision, and meanwhile, the bandwidth is difficult to meet the use requirement.
Therefore, the above problems are further improved.
SUMMERY OF THE UTILITY MODEL
The utility model discloses a main aim at provides a medium integrated waveguide is to excessive broadband millimeter wave power combiner of rectangular waveguide, it links through rectangular waveguide, first circuit board and second circuit board to all be equipped with gradual change probe and medium integrated waveguide at every circuit board, thereby realize uniform amplitude homophase or uniform amplitude antiphase output, and realize the synthesis of power and equally divide through four ports of two circuit boards, have advantages such as bandwidth width, stable in structure and convenient to use.
In order to achieve the above object, the utility model provides a dielectric integrated waveguide is to excessive broadband millimeter wave power combiner of rectangular waveguide, including rectangular waveguide, first circuit board and second circuit board, first circuit board with the second circuit board all install in rectangular waveguide, wherein:
the first circuit board and the second circuit board are respectively provided with a signal layer, a dielectric layer and a ground layer, and the dielectric layer is positioned between the signal layer and the ground layer;
the signal layer comprises a first gradient probe assembly, a first dielectric integrated waveguide assembly, a first gradient microstrip line and a second gradient microstrip line, wherein one side of the first dielectric integrated waveguide assembly is connected with the first gradient probe assembly, and the other side (the side far away from the first gradient probe assembly) of the first dielectric integrated waveguide assembly is respectively connected with the first gradient microstrip line and the second gradient microstrip line;
the ground layer comprises a second gradient probe assembly and a second dielectric integrated waveguide assembly, the second gradient probe assembly and the first gradient probe assembly are in (anti-) symmetry (opposite extension directions) relative to the dielectric layer, and the first dielectric integrated waveguide assembly and the second dielectric integrated waveguide assembly are both provided with through holes.
As a further preferable technical solution of the above technical solution, the first taper probe assembly and the second taper probe assembly constitute a taper probe, and the first taper probe assembly gradually decreases in size in a direction away from the first dielectric integrated waveguide assembly and the second taper probe assembly gradually decreases in size in a direction away from the second dielectric integrated waveguide assembly.
As a further preferable mode of the above mode, the rectangular waveguide includes a first mounting groove portion to which the tapered probe of the first circuit board is mounted and a second mounting groove portion to which the tapered probe of the second circuit board is mounted.
As a further preferable mode of the above mode, the first dielectric integrated waveguide module and the second dielectric integrated waveguide module constitute a dielectric integrated waveguide.
As a further preferable technical solution of the above technical solution, an end of the first gradually-changing microstrip line of the first circuit board away from the first dielectric integrated waveguide assembly is a first port, and an end of the second gradually-changing microstrip line of the first circuit board away from the first dielectric integrated waveguide assembly is a second port;
the end of the first gradually-changing microstrip line of the second circuit board far away from the first dielectric integrated waveguide assembly is a third port, and the end of the second gradually-changing microstrip line of the second circuit board far away from the first dielectric integrated waveguide assembly is a fourth port.
As a further preferable aspect of the above technical means, the ground layer of the first circuit board and the ground layer of the second circuit board are close to each other, and the signal layer of the first circuit board and the signal layer of the second circuit board are distant from each other, wherein:
when the gradient probe of the first circuit board and the gradient probe of the second circuit board are arranged in a first direction (the extending direction of the first gradient probe assembly of the first circuit board is opposite to the extending direction of the first gradient probe assembly of the second circuit board, and the extending direction of the second gradient probe assembly of the first circuit board is opposite to the extending direction of the second gradient probe assembly of the second circuit board), the output of the gradient probe of the first circuit board and the output of the gradient probe of the second circuit board are in equal-amplitude reverse phase (the first port and the third port are in equal-amplitude reverse phase, and the second port and the fourth port are in equal-amplitude reverse phase);
when the gradient probe of the first circuit board and the gradient probe of the second circuit board are arranged in the second direction (the extending direction of the first gradient probe assembly of the first circuit board is the same as the extending direction of the first gradient probe assembly of the second circuit board, and the extending direction of the second gradient probe assembly of the first circuit board is the same as the extending direction of the second gradient probe assembly of the second circuit board), the output of the gradient probe of the first circuit board and the output of the gradient probe of the second circuit board are in equal amplitude and in phase.
Drawings
Fig. 1 is an overall perspective view of a dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
Fig. 2A is a side view (signal layer angle) of the first circuit board (or second circuit board) of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
Fig. 2B is a side view (ground plane angle) of the first circuit board (or the second circuit board) of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
Fig. 3 is a perspective view of the first circuit board (or the second circuit board) of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
Fig. 4 is a perspective view of the rectangular waveguide of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
Fig. 5A is a schematic diagram of return loss (triangle mark) and insertion loss of the first position setting of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner according to the present invention.
Fig. 5B is a four-way output phase diagram of the first position setting of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner according to the present invention.
Fig. 6A is a return loss (triangle mark) and insertion loss diagram of the second azimuth setting of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
Fig. 6B is a diagram of the four-way output phase of the second azimuthal arrangement of the dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of the present invention.
The reference numerals include: 100. a rectangular waveguide; 110. a first mounting groove portion; 120. a second mounting groove portion; 200. a first circuit board; 210. a signal layer; 211. a first tapered probe assembly; 212. a first dielectric integrated waveguide assembly; 213. a first tapered microstrip line; 214. a second tapered microstrip line; 215. a via hole; 216. a first port; 217. a second port; 220. a dielectric layer; 230. a ground plane; 231. a second tapered probe assembly; 232. a second dielectric integrated waveguide assembly; 300. a second circuit board; 310. a third port; 320. a fourth port.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments described below are by way of example only, and other obvious variations will occur to those skilled in the art. The underlying principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
The utility model discloses an integrated waveguide of medium is to excessive broadband millimeter wave power combiner of rectangular waveguide, combines preferred embodiment below, further describes utility model's concrete embodiment.
In the embodiments of the present invention, those skilled in the art will note that the rectangular waveguide and the like according to the present invention can be regarded as the prior art.
Preferred embodiments.
The utility model discloses a medium integrated waveguide is to excessive broadband millimeter wave power combiner of rectangular waveguide, including rectangular waveguide 100, first circuit board 200 and second circuit board 300, first circuit board 200 with second circuit 300 board all install in rectangular waveguide 100, wherein:
the first circuit board 200 and the second circuit board 300 are respectively provided with a signal layer 210, a dielectric layer 220 and a ground layer 230, wherein the dielectric layer 220 is positioned between the signal layer 210 and the ground layer 230;
the signal layer 210 comprises a first tapered probe assembly 211, a first dielectric integrated waveguide assembly 212, a first tapered microstrip line 213 and a second tapered microstrip line 214, wherein one side of the first dielectric integrated waveguide assembly 212 is connected with the first tapered probe assembly 211, and the other side (the side far away from the first tapered probe assembly) of the first dielectric integrated waveguide assembly 212 is respectively connected with the first tapered microstrip line 213 and the second tapered microstrip line 214;
the ground layer 230 includes a second tapered probe assembly 231 and a second dielectric integrated waveguide assembly 232, the second tapered probe assembly 231 and the first tapered probe assembly 211 are (anti-) symmetrical with respect to the dielectric layer 220 (i.e. the extending directions of the first tapered probe assembly and the second tapered probe assembly are opposite), and the first dielectric integrated waveguide assembly 212 and the second dielectric integrated waveguide assembly 232 are both provided with via holes 215.
Specifically, the first tapered probe assembly 211 and the second tapered probe assembly 231 form a tapered probe, and the first tapered probe assembly 211 gradually decreases in size in a direction away from the first dielectric integrated waveguide assembly 212, and the second tapered probe assembly 231 gradually decreases in size in a direction away from the second dielectric integrated waveguide assembly 232.
More specifically, the rectangular waveguide 100 includes a first mounting groove portion 110 and a second mounting groove portion 120, and the tapered probe of the first circuit board 200 is mounted to the first mounting groove portion 110 and the tapered probe of the second circuit board 300 is mounted to the second mounting groove portion 120.
Further, the first dielectric integrated waveguide assembly 212 and the second dielectric integrated waveguide assembly 232 constitute a dielectric integrated waveguide.
Furthermore, the end of the first tapered microstrip line of the first circuit board 200 away from the first dielectric integrated waveguide assembly is a first port 216 and the end of the second tapered microstrip line of the first circuit board away from the first dielectric integrated waveguide assembly is a second port 217;
the end of the first tapered microstrip line of the second circuit board 300 away from the first dielectric integrated waveguide assembly is a third port 310, and the end of the second tapered microstrip line of the second circuit board away from the first dielectric integrated waveguide assembly is a fourth port 320.
Preferably, the ground layer of the first circuit board 200 and the ground layer of the second circuit board 300 are close to each other, and the signal layer of the first circuit board 200 and the signal layer of the second circuit board 300 are far from each other, wherein:
when the tapered probe of the first circuit board 200 and the tapered probe of the second circuit board 300 are arranged in a first direction (antisymmetric arrangement, the extending direction of the first tapered probe component of the first circuit board is opposite to the extending direction of the first tapered probe component of the second circuit board, the extending direction of the second tapered probe component of the first circuit board is opposite to the extending direction of the second tapered probe component of the second circuit board), the output of the tapered probe of the first circuit board and the output of the tapered probe of the second circuit board are in equal-amplitude reverse phase (equal-amplitude reverse phase of the first port and the third port, and equal-amplitude reverse phase of the second port and the fourth port);
when the tapered probes of the first circuit board 200 and the second circuit board 300 are arranged in the second direction (symmetrically arranged, the extending direction of the first tapered probe assembly of the first circuit board is the same as the extending direction of the first tapered probe assembly of the second circuit board, and the extending direction of the second tapered probe assembly of the first circuit board is the same as the extending direction of the second tapered probe assembly of the second circuit board), the output of the tapered probes of the first circuit board and the output of the tapered probes of the second circuit board are in equal amplitude and in phase.
The principle of the utility model is that:
a rectangular waveguide, in this embodiment, WR-28 is taken as an example, wherein the inner cross-sectional dimension is: 7.12mm 3.556mm, wherein one face is closed, and two mounting groove parts are arranged on the face.
Circuit Board (PCB) adopts bilayer structure, and upper and lower surface is the metal (this embodiment thickness sets up to 35um, and the upper surface is the signal layer, and the lower surface is the ground plane), and the centre is dielectric layer (dielectric constant 2.2, loss tangent 0.0009), thickness 0.254mm. The structure includes that:
gradual change microstrip lines (active impedance transformation);
SIW (dielectric integrated waveguide): the metal-plated via hole is composed of two layers of metal on the upper surface and the lower surface and two rows of periodic via holes.
Gradient probe: the upper and lower surfaces form antisymmetry, and the function is as follows: and mode conversion, namely converting the quasi-TEM mode transmitted in the circuit board into the TE10 mode transmitted in the rectangular waveguide by the gradual change probe, so as to realize power transmission.
When the work is performed:
energy is input by a traditional rectangular waveguide, and is divided into two paths through a gradual change probe, each path is divided into two paths through a circuit board, and then a four-path power divider is formed (a first port, a second port, a third port and a fourth port can be connected with 4 antennas).
The two PCB boards are symmetrically inserted into the traditional waveguide and can output constant-amplitude in-phase output (a first port and a third port, and a second port and a fourth port), and the two PCB boards are inversely inserted and can output constant-amplitude reverse-phase output.
The output port of the microstrip line on the first circuit board is set as a first port and a second port which are in the same phase
The output port of the microstrip line on the second circuit board is set as a third port and a fourth port which are in the same phase.
When power combining is performed:
the first port, the second port, the third port and the fourth port synthesize input energy, the first circuit board synthesizes the input energy of the first port and the second port, the second circuit board synthesizes the input energy of the third port and the fourth port, and the rectangular waveguide synthesizes the input energy of the first circuit board and the second circuit board to realize four-in-one.
It is worth mentioning that the technical features such as the dielectric integrated waveguide to the excessive broadband millimeter wave power combiner of rectangular waveguide that the patent application relates to should be regarded as the prior art, and the concrete structure, the theory of operation and the control mode that may involve, the space arrangement mode of these technical features adopt the conventional selection in this field can, should not be regarded as the inventive point of the utility model belongs to, the utility model discloses a do not further expand detailed description specifically.
It will be apparent to those skilled in the art that modifications and variations can be made in the above-described embodiments, or some features of the invention may be substituted or omitted, and any modification, substitution, or improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.
Claims (6)
1. A broadband millimeter wave power combiner with a transition from a dielectric integrated waveguide to a rectangular waveguide is characterized by comprising the rectangular waveguide, a first circuit board and a second circuit board, wherein the first circuit board and the second circuit board are both mounted on the rectangular waveguide, and the broadband millimeter wave power combiner is characterized in that:
the first circuit board and the second circuit board are respectively provided with a signal layer, a dielectric layer and a ground layer, and the dielectric layer is positioned between the signal layer and the ground layer;
the signal layer comprises a first gradient probe assembly, a first dielectric integrated waveguide assembly, a first gradient microstrip line and a second gradient microstrip line, one side of the first dielectric integrated waveguide assembly is connected with the first gradient probe assembly, and the other side of the first dielectric integrated waveguide assembly is respectively connected with the first gradient microstrip line and the second gradient microstrip line;
the ground layer comprises a second gradient probe assembly and a second medium integrated waveguide assembly, the second gradient probe assembly and the first gradient probe assembly are symmetrical relative to the medium layer, and the first medium integrated waveguide assembly and the second medium integrated waveguide assembly are both provided with through holes.
2. The broadband millimeter wave power combiner of claim 1, wherein the first tapered probe assembly and the second tapered probe assembly form a tapered probe, the first tapered probe assembly gradually decreases in size in a direction away from the first dielectric integrated waveguide assembly, and the second tapered probe assembly gradually decreases in size in a direction away from the second dielectric integrated waveguide assembly.
3. A dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner as claimed in claim 2, wherein said rectangular waveguide comprises a first mounting slot portion and a second mounting slot portion, said tapered probe of said first circuit board being mounted to said first mounting slot portion and said tapered probe of said second circuit board being mounted to said second mounting slot portion.
4. The broadband millimeter wave power combiner of claim 3, wherein the first dielectric integrated waveguide assembly and the second dielectric integrated waveguide assembly form a dielectric integrated waveguide.
5. The dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of claim 4, wherein an end of the first tapered microstrip line of the first circuit board away from the first dielectric integrated waveguide assembly is a first port and an end of the second tapered microstrip line of the first circuit board away from the first dielectric integrated waveguide assembly is a second port;
the end, far away from the first dielectric integrated waveguide assembly, of the first gradient microstrip line of the second circuit board is a third port, and the end, far away from the first dielectric integrated waveguide assembly, of the second gradient microstrip line of the second circuit board is a fourth port.
6. The dielectric integrated waveguide to rectangular waveguide transition broadband millimeter wave power combiner of claim 5, wherein the ground layer of the first circuit board and the ground layer of the second circuit board are close to each other, and the signal layer of the first circuit board and the signal layer of the second circuit board are far from each other, wherein:
when the gradient probe of the first circuit board and the gradient probe of the second circuit board are arranged in a first direction, the output of the gradient probe of the first circuit board and the output of the gradient probe of the second circuit board are in equal amplitude and opposite phase;
when the gradient probe of the first circuit board and the gradient probe of the second circuit board are arranged in the second direction, the output of the gradient probe of the first circuit board and the output of the gradient probe of the second circuit board are in the same amplitude and phase.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221866800.8U CN217768722U (en) | 2022-07-19 | 2022-07-19 | Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221866800.8U CN217768722U (en) | 2022-07-19 | 2022-07-19 | Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217768722U true CN217768722U (en) | 2022-11-08 |
Family
ID=83874743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221866800.8U Active CN217768722U (en) | 2022-07-19 | 2022-07-19 | Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217768722U (en) |
-
2022
- 2022-07-19 CN CN202221866800.8U patent/CN217768722U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3888186B1 (en) | Ridge gap waveguide and multilayer antenna array including the same | |
| Jeong et al. | Design and analysis of swapped port coupler and its application in a miniaturized Butler matrix | |
| CN110224219B (en) | Circularly polarized substrate integrated cavity antenna | |
| CN109216850B (en) | Eight-path power synthesis/power division network of ridge waveguide microstrip probe | |
| CN100449864C (en) | Substrate integrated waveguide comb-shaped power distributor | |
| CN202940807U (en) | Butler matrix used for beam forming network | |
| CN104092028A (en) | Balance feed differential slot antenna for restraining common-mode noise | |
| CN109980366A (en) | A kind of broadband double-circle polarization endfire array antenna based on gap waveguide | |
| CN109950693A (en) | Integral substrate gap waveguide circular polarisation gap traveling-wave array antenna | |
| CN113241533A (en) | Ku/Ka dual-frequency dual-polarization active phased-array antenna | |
| CN100511833C (en) | Chip integrated waveguide broad-band multipath power distributor | |
| JP5251603B2 (en) | Communication body and coupler for signal transmission | |
| CN217768722U (en) | Broadband millimeter wave power synthesizer for transition from medium integrated waveguide to rectangular waveguide | |
| Guo et al. | Half-mode composite waveguide | |
| CN110534920B (en) | Flexible butler feed network | |
| CN205406692U (en) | Continuous reconfigurable power distribution ware of power distribution proportion | |
| CN100388556C (en) | Chip-integrated waveguide 180-degree 3-db oriented coupler | |
| CN106856260B (en) | Miniaturized broadband dual-polarized antenna feed network | |
| CN109585994B (en) | Miniature double-layer half-mode substrate integrated waveguide six-port device | |
| CN109301419B (en) | Coplanar waveguide ultra-wideband sum-difference device | |
| CN207938785U (en) | A kind of right-angled intersection light guide module | |
| CN114221122B (en) | Dual-port co-polarized antenna | |
| CN107732396B (en) | Power divider based on substrate integrated waveguide | |
| CN115084819B (en) | Millimeter wave power synthesizer and method for transition from dielectric integrated waveguide to rectangular waveguide | |
| CN110581335B (en) | Sequential feed power distribution network based on substrate integrated waveguide |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 0459, Unit 209, No. 62 Chengyi North Street, Software Park Phase III, Torch High tech Zone, Xiamen City, Fujian Province, 361000 Patentee after: Sijie Microelectronics (Xiamen) Co.,Ltd. Address before: 201800 room j461, building 6, 1288 Yecheng Road, Jiading District, Shanghai Patentee before: SHANGHAI SILICON MICROELECTRONICS Co.,Ltd. |