CN217701713U

CN217701713U - Air supplement assembly for eutectic bonding and die bonding of semiconductor

Info

Publication number: CN217701713U
Application number: CN202221247474.2U
Authority: CN
Inventors: 向军
Original assignee: Jiangsu Xinzhida New Energy Equipment Co ltd
Current assignee: Jiangsu Xinzhida New Energy Equipment Co ltd
Priority date: 2022-05-23
Filing date: 2022-05-23
Publication date: 2022-11-01
Anticipated expiration: 2032-05-23

Abstract

The utility model provides a tonifying qi subassembly that solid brilliant usefulness of semiconductor eutectic welding, including support and welding furnace, the elongated slot has been seted up on the apron of welding furnace, and the suction nozzle absorbs the wafer and inserts right in the elongated slot tablet in the welding furnace carries out solid brilliant, still includes air duct, nitrogen gas heating element and nitrogen gas tonifying qi subassembly, nitrogen gas heating element is provided with heating cylinder and heating rod, utilizes the heating rod to heat the nitrogen gas in the heating cylinder to suitable temperature, avoids the low temperature nitrogen gas to reduce the temperature when the eutectic welding on the tablet to cause the influence to the quality of welding, and the nitrogen gas of heating gets into the gas-supplementing pipe in the nitrogen gas tonifying qi subassembly through the air duct, and the gas-supplementing pipe distributes nitrogen gas to in a plurality of gas blow pipe, and the gas blow in the elongated slot with nitrogen gas for can carry out vacuum welding, avoid soldering tin to influence by oxidation solid brilliant effect, the effectual production efficiency that has improved.

Description

Air supplement assembly for eutectic bonding and die bonding of semiconductor

Technical Field

The utility model relates to a semiconductor packaging field especially relates to a tonifying qi subassembly that solid brilliant usefulness of semiconductor eutectic bonding.

Background

Eutectic welding is also called low melting point alloy welding, and the basic characteristics of the eutectic alloy are as follows: two different metals can be alloyed at temperatures well below their respective melting points in certain proportions by weight, and the most common eutectic bonding used in microelectronic devices is the bonding of a die to a gold plated submount or lead frame, i.e., "gold-on-die eutectic bonding".

During semiconductor eutectic welding, the tablet is heated in a welding furnace at first, so that soldering tin on the tablet is heated to a proper temperature, then the wafer is placed on the soldering tin, the soldering tin at the bottom of the wafer is fused with the soldering tin on the tablet, and then the wafer is cooled to finish packaging.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is, the tablet exposes in the air when eutectic bonding, can't weld under vacuum state, makes soldering tin oxidation easily, influences the problem of solid brilliant effect, the utility model provides an above-mentioned problem is solved to the tonifying qi subassembly of solid brilliant usefulness of semiconductor eutectic bonding.

The utility model provides a technical scheme that its technical problem adopted is: the gas supplementing assembly for eutectic semiconductor welding and die bonding comprises a support and a welding furnace, wherein a cover plate of the welding furnace is provided with a long groove, a suction nozzle sucks a wafer to be inserted into the long groove to bond a material sheet in the welding furnace, the gas supplementing assembly further comprises a gas guide pipe, a nitrogen heating assembly and a nitrogen gas supplementing assembly, the nitrogen heating assembly and the nitrogen gas distributing assembly are connected through the gas guide pipe, and high-temperature nitrogen gas is blown into the long groove by the nitrogen gas distributing assembly.

Further: the nitrogen heating assembly comprises a shell, a heat insulation plate, a heating cylinder and a heating rod, wherein the heating rod is arranged in the heating cylinder, the heating cylinder is arranged in the shell, the heat insulation plate is arranged between the shell and the heating cylinder, and an air inlet and an air outlet are formed in the end part of the heating cylinder.

Further: the nitrogen gas tonifying qi subassembly includes moisturizing pipe and gas blow pipe, the one end of air duct with the gas outlet of heating jar is connected, the other end of air duct with the moisturizing pipe is connected, evenly be provided with a plurality of gas guide port along the axial on the moisturizing pipe, a plurality of gas guide port all be connected with the gas blow pipe, the export of gas blow pipe stretches to the elongated slot.

Further: and a thermocouple is arranged at the end part of the heating cylinder.

The beneficial effects of the utility model are that, the utility model relates to a tonifying qi subassembly that solid brilliant usefulness of semiconductor eutectic welding, through setting up heating cylinder and heating rod, utilize the heating rod to heat suitable temperature with the nitrogen gas in the heating cylinder, temperature when avoiding low temperature nitrogen gas to reduce the eutectic welding on the tablet, thereby cause the influence to the quality of welding, the nitrogen gas of heating passes through during the air duct gets into the air supplement pipe, the air supplement pipe distributes nitrogen gas to a plurality of gas blow pipe, the gas blow pipe blows in the elongated slot with nitrogen gas, make and to carry out vacuum welding, avoid soldering tin by the solid brilliant effect of oxidation influence, the effectual production efficiency that has improved.

Drawings

The present invention will be further explained with reference to the drawings and examples.

Fig. 1 is a schematic view of the overall structure of the present invention;

fig. 2 is a schematic view of the internal structure of the housing of the present invention;

fig. 3 is a schematic structural view of the heating cylinder end of the present invention.

In the figure, 1, a support, 2, a welding furnace, 3, a long groove, 4, an air guide pipe, 5, a shell, 6, a heat insulation plate, 7, a heating cylinder, 8, a heating rod, 9, an air inlet, 10, an air outlet, 11, an air supply pipe, 12, an air blowing pipe, 13 and a thermocouple are arranged.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention. On the contrary, the embodiments of the invention include all changes, modifications and equivalents coming within the spirit and terms of the claims appended hereto.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like indicate orientations or positional relationships based on those shown in the drawings, merely for convenience of description and simplification of the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the invention.

Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.

Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present invention includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the embodiments of the present invention.

As shown in fig. 1, the utility model provides a tonifying qi subassembly that solid brilliant usefulness of semiconductor eutectic welding, including support 1 and welding furnace 2, elongated slot 3 has been seted up on the apron of welding furnace 2, and the suction nozzle absorbs the wafer and inserts right in the elongated slot 3 tablet in the welding furnace 2 carries out solid brilliant, still includes air duct 4, nitrogen gas heating element and nitrogen gas tonifying qi subassembly, nitrogen gas heating element and nitrogen gas distribution subassembly pass through air duct 4 advances to connect, nitrogen gas distribution subassembly blows in high temperature nitrogen gas in the elongated slot 3.

Due to the fact that the long grooves 3 are empty, the wafer is attached to the material sheet in a vacuum state by adding the air supplement component at the crystal fixing position and blowing nitrogen into the long grooves 3 through the air supplement component in order to guarantee vacuum welding when the material sheet for crystal fixing is in an empty state, and therefore tin paste is prevented from being oxidized, and eutectic welding is further completed.

As shown in fig. 2 and 3, the nitrogen heating assembly comprises a shell 5, a heat insulation plate 6, a heating cylinder 7 and a heating rod 8, the heating rod 8 is arranged in the heating cylinder 7, the heating cylinder 7 is arranged in the shell 5, the heat insulation plate 6 is arranged between the shell 5 and the heating cylinder 7, an air inlet 9 and an air outlet 10 are arranged at the end part of the heating cylinder 7, the material sheet is at a proper temperature of eutectic when the crystal is solidified for ensuring the heating of nitrogen, the eutectic temperature on the material sheet is prevented from being reduced by low-temperature nitrogen, the welding quality is ensured, nitrogen is injected into the heating rod through the air inlet 9 during the work, the heating rod 8 heats the nitrogen, and the heated nitrogen enters the air supplementing pipe 11 through the air guide pipe 4.

The nitrogen gas tonifying qi subassembly includes moisturizing pipe 11 and gas blow pipe 12, the one end of gas duct 4 with the gas outlet 10 of heating jar 7 is connected, the other end of gas duct 4 with moisturizing pipe 11 is connected, evenly be provided with a plurality of gas guide mouth, a plurality of along the axial on the moisturizing pipe 11 the gas guide mouth all be connected with gas blow pipe 12, the export of gas blow pipe 12 stretch to elongated slot 3, nitrogen gas in the moisturizing pipe 11 blows nitrogen gas to elongated slot 3 through a plurality of gas blow pipe 12 to vacuum welding carries out.

And a thermocouple 13 is arranged at the end part of the heating cylinder 7 and is used for detecting and controlling the temperature in the heating cylinder 7.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic representation of the term does not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

In light of the foregoing, it will be apparent to those skilled in the art from this disclosure that various changes and modifications can be made without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.

Claims

1. The utility model provides a tonifying qi subassembly that solid brilliant usefulness of semiconductor eutectic bonding, includes support (1) and welding furnace (2), seted up on the apron of welding furnace (2) elongated slot (3), the suction nozzle absorption wafer inserts to carry out solid brilliant in elongated slot (3) to the tablet in welding furnace (2), its characterized in that still includes air duct (4), nitrogen gas heating element and nitrogen gas tonifying qi subassembly, nitrogen gas heating element and nitrogen gas distribution subassembly pass through air duct (4) advance to be connected, nitrogen gas distribution subassembly blows in high temperature nitrogen gas in elongated slot (3).

2. The gas supplementing assembly for eutectic semiconductor soldering and die bonding according to claim 1, wherein the nitrogen heating assembly comprises a shell (5), a heat insulating plate (6), a heating cylinder (7) and a heating rod (8), the heating rod (8) is arranged in the heating cylinder (7), the heating cylinder (7) is arranged in the shell (5), the heat insulating plate (6) is arranged between the shell (5) and the heating cylinder (7), and an air inlet (9) and an air outlet (10) are formed in the end part of the heating cylinder (7).

3. The gas supplementing assembly for eutectic die bonding of semiconductors according to claim 2, wherein the nitrogen gas supplementing assembly comprises a gas supplementing pipe (11) and an air blowing pipe (12), one end of the gas guide pipe (4) is connected with the gas outlet (10) of the heating cylinder (7), the other end of the gas guide pipe (4) is connected with the gas supplementing pipe (11), a plurality of gas guide ports are uniformly arranged on the gas supplementing pipe (11) along the axial direction, the plurality of gas guide ports are connected with the air blowing pipe (12), and the outlet of the air blowing pipe (12) extends to the elongated slot (3).

4. A gas supplement module for eutectic bonding of semiconductors according to claim 2, wherein a thermocouple (13) is provided at the end of the heating cylinder (7).