CN217691139U

CN217691139U - High-voltage-resistant junction field effect transistor

Info

Publication number: CN217691139U
Application number: CN202221162496.9U
Authority: CN
Inventors: 张文; 张洲; 龚婷; 蒋雪梅
Original assignee: Shenzhen Huiyoudi Technology Co ltd
Current assignee: Shenzhen Huiyoudi Technology Co ltd
Priority date: 2022-05-13
Filing date: 2022-05-13
Publication date: 2022-10-28
Anticipated expiration: 2032-05-13

Abstract

The utility model relates to an electronic component technical field, concretely relates to high pressure resistant junction field effect transistor, which comprises a housin, the rear end outer wall both sides of casing all are fixed with the fixed block, the inner wall bottom of casing is provided with P type substrate, the top of P type substrate is provided with N type lightly doped area, and the both sides outer wall of casing is fixed with the radiating part, the bottom outer wall of casing is provided with the installation component, the installation component includes spliced pole, installation base and rotating part, the upper end and the casing bottom outer wall connection of spliced pole, rotating part's bottom is connected with the top of installation base, and can know through the above-mentioned mode the utility model discloses can make the workman adjust the installation angle of casing according to the demand when actual installation, and then can reduce the condition that technical staff received the hindrance when the effect transistor and take place.

Description

High-voltage-resistant junction field effect transistor

Technical Field

The utility model relates to an electronic component technical field, concretely relates to high pressure resistant junction field effect transistor.

Background

The junction field effect transistor is characterized in that two high-doped P regions are manufactured on the same N-type semiconductor and connected together, an extracted electrode is called a grid g, and two electrodes are respectively extracted from two ends of the N-type semiconductor and respectively called a drain d and a source s. The junction field effect transistor is a three-terminal active device with an amplifying function, is the simplest one of unipolar field effect transistors, and can be divided into an N channel or a P channel.

When the traditional junction field effect transistor is used, the high-voltage resistance performance is low due to structural reasons, so that the traditional junction field effect transistor is often damaged due to high voltage.

Therefore, it is necessary to develop a jfet with high voltage resistance.

SUMMERY OF THE UTILITY MODEL

Therefore, the utility model provides a high pressure resistant junction field effect transistor to solve current high pressure resistant junction field effect transistor when concrete ann changes, because its style of structure, lead to its inconvenient angle to its ann changes the position when special environment ann changes to adjust, and then lead to the technical staff often to receive the problem of hindrance when the installation.

In order to achieve the above object, the present invention provides the following technical solutions: a high-voltage-resistant junction field effect transistor comprises a shell, wherein fixed blocks are fixed on two sides of the outer wall of the rear end of the shell, a P-type substrate is arranged at the bottom of the inner wall of the shell, an N-type lightly doped region is arranged at the top end of the P-type substrate, heat dissipation components are fixed on the outer walls of the two sides of the shell, and an installation component is arranged on the outer wall of the bottom end of the shell;

the installation component comprises a connecting column, an installation base and a rotating part, the upper end of the connecting column is connected with the outer wall of the bottom end of the shell, the bottom end of the rotating part is connected with the top end of the installation base, the rotating part comprises an adjusting disc, a sleeve, an adjusting box, a movable plate and a spring, the bottom end of the connecting column is fixedly connected with the top end of the adjusting disc, and the adjusting disc is arranged inside the sleeve.

Preferably, an N-type heavily doped region is formed on both sides of the outer wall of the top end of the N-type lightly doped region, the left N-type heavily doped region is connected with a source electrode through metal aluminum, and the right N-type heavily doped region is connected with a drain electrode through metal aluminum.

Preferably, the top end of the N-type lightly doped region is covered with an insulating layer a, and the top end of the insulating layer is connected with a gate through metal aluminum.

Preferably, a groove is formed in the outer wall of the top end of the N-type lightly doped region and located between the grid electrode and the drain electrode, an insulating layer b is fixed to the inner wall of the top end of the groove, and a polycrystalline silicon layer is fixed to the top end of the insulating layer b.

Preferably, the heat dissipation part comprises two groups of heat conduction plates, the side ends of the heat conduction plates are fixedly connected with the outer walls of the two sides of the shell respectively, and heat dissipation fins are fixed on one side, away from the shell, of each heat conduction plate.

Preferably, telescopic bottom and the top outer wall fixed connection of installation base, the regulating box is provided with two sets ofly, two sets ofly the regulating box relative side respectively with telescopic both sides outer wall fixed connection, the movable plate sets up in the regulating box.

Preferably, the inner walls of the upper end and the lower end of the adjusting box are provided with sliding grooves, the upper end and the lower end of the movable plate are connected with the sliding grooves in a sliding mode, one end of the spring is fixed on the outer wall of the opposite side of the movable plate, and the end, far away from the movable plate, of the spring is fixedly connected with the inner wall of the side end of the adjusting box.

Preferably, the outer wall of one side that the spring was kept away from to the movable plate is fixed with fixing bolt, fixing bolt keeps away from the one end setting of movable plate in telescopic inside, the outer wall of adjustment disk corresponds outside department with fixing bolt and has all seted up the regulation jack, fixing bolt and regulation jack inner wall sliding connection, fixing bolt and the equal sliding connection of telescopic both sides inner wall.

The utility model has the advantages that:

the utility model discloses in, the spliced pole that the installer accessible set up, cooperation between adjustment disk and the sleeve rotate, and then can adjust the installation angle of casing, and cooperation through setting up between regulating box, movable plate, spring, fixed bolt and the adjusting jack can restrict the position of casing after the rotatory casing of accomplishing of workman, avoids the workman casing to rotate at will when fixed pole piece, and can know through the above-mentioned mode the utility model discloses can make the workman adjust the installation angle of casing according to the demand when actually installing, and then can reduce the condition that technical staff received the hindrance when the effect tube and take place.

Drawings

Fig. 1 is a schematic view of the external structure of the present invention in the top view direction;

FIG. 2 is a schematic view of the front view of the present invention with a partial cross-sectional structure;

FIG. 3 is an enlarged schematic view of the structure of FIG. 2;

fig. 4 is a schematic view of a partial sectional structure of the middle shell in the front view direction of the present invention;

fig. 5 is a schematic view of the three-dimensional structure of the middle moving plate and the fixing pin of the present invention.

In the figure: 100. a housing; 110. a fixed block; 120. a P-type substrate; 121. an N-type lightly doped region; 122. a trench; 123. a polysilicon layer; 130. a source electrode; 131. a gate electrode; 132. a drain electrode; 200. a heat conducting plate; 210. a heat sink; 300. connecting columns; 310. an adjusting disk; 311. adjusting the jack; 400. installing a base; 410. a sleeve; 420. an adjusting box; 421. moving the plate; 422. a spring; 423. and fixing the bolt.

Detailed Description

The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are presented herein only to illustrate and explain the present invention, and not to limit the present invention.

Referring to fig. 1-5, the present invention provides a high pressure resistant jfet, which includes a housing 100, fixed blocks 110 are fixed on both sides of an outer wall of a rear end of the housing 100, mounting screws are screwed on the fixed blocks 110, the fixed blocks 110 can mount and fix the housing 100 by the mounting screws, a P-type substrate 120 is disposed at the bottom of an inner wall of the housing 100, an N-type lightly doped region 121 is disposed at a top end of the P-type substrate 120, N-type heavily doped regions are formed on both sides of an outer wall of a top end of the N-type lightly doped region 121, a source 130 is connected to the left N-type heavily doped region through aluminum metal, a drain 132 is connected to the right N-type heavily doped region through aluminum metal, an insulating layer a covers the top end of the N-type lightly doped region 121, a gate 131 is connected to the top end of the insulating layer through aluminum metal, a groove 122 is formed on an outer wall of a top end of the N-type lightly doped region 121 and located between the gate 131 and the drain 132, an insulating layer b is fixed on the inner wall of the top end of the groove 122, a polysilicon layer 123 is fixed on the top end of the insulating layer b, the front ends of the arranged source 130, the grid 131 and the drain 132 all penetrate through the outer wall of the front end of the shell 100 and are fixedly connected with the outer wall of the shell 100, the groove 122 and the polysilicon layer 123 are both arranged to improve the high-pressure resistance of the drain 132 and further improve the compression resistance of the field effect transistor, heat dissipation parts are fixed on the outer walls of the two sides of the shell 100 and are arranged to improve the integral heat dissipation capability of the shell 100 and avoid the reduction of the resistance value between the P-type substrate 120 and the grid 131 after the temperature of the field effect transistor is raised, the heat dissipation parts comprise two groups of heat conduction plates 200, the side ends of the heat conduction plates 200 are respectively fixedly connected with the outer walls of the two sides of the shell 100, heat dissipation plates 210 are fixed on the sides of the heat conduction plates 200 away from the shell 100, the heat conduction plates 200 are made of graphene, the heat sink 210 is made of copper, the heat conducting plate 200 can guide the heat on the casing 100 into the heat sink 210, and the heat sinks 210 can accelerate the heat dissipation, thereby improving the heat dissipation performance of the whole casing 100;

the outer wall of the bottom end of the shell 100 is provided with a mounting assembly, the mounting assembly comprises a connecting column 300, a mounting base 400 and a rotating part, the upper end of the connecting column 300 is connected with the outer wall of the bottom end of the shell 100, the bottom end of the rotating part is connected with the top end of the mounting base 400, the rotating part comprises an adjusting disc 310, a sleeve 410, an adjusting box 420, a movable plate 421 and a spring 422, the bottom end of the connecting column 300 is fixedly connected with the top end of the adjusting disc 310, the adjusting disc 310 is arranged inside the sleeve 410, the outer wall of the arranged adjusting disc 310 is rotatably connected with the inner wall of the top end of the sleeve 410, the bottom end of the sleeve 410 is fixedly connected with the outer wall of the top end of the mounting base 400, the outer wall of the arranged mounting base 400 is provided with mounting holes, the arranged mounting holes can be matched with screws to mount and fix the mounting base 400, the adjusting box 420 is provided with two groups, opposite sides of the two groups of adjusting box 420 are respectively and fixedly connected with the outer walls of the two sides of the sleeve 410, the adjusting box 420 is arranged for installing and supporting the moving plate 421, the moving plate 421 is arranged in the adjusting box 420, the inner walls of the upper and lower ends of the adjusting box 420 are both provided with sliding grooves, the upper and lower ends of the moving plate 421 are both slidably connected with the sliding grooves, the sliding grooves are arranged for facilitating the moving of the moving plate 421 on the inner wall of the adjusting box 420 and guiding the moving direction of the moving plate 421, one end of the spring 422 is fixed on the outer wall of the opposite side of the moving plate 421, one end of the spring 422 far away from the moving plate 421 is fixedly connected with the inner wall of the side end of the adjusting box 420, the spring 422 is arranged for enabling the moving plate 421 to be inserted into the adjusting jack 311 all the time without external force, the outer wall of the moving plate 421 far away from the spring 422 is fixed with a fixed bolt 423, one end of the fixed bolt 423 far away from the moving plate 421 is arranged in the sleeve 410, the outer wall of the adjusting plate 310 is provided with an adjusting jack 311 at the outer side corresponding to the fixed bolt 423, fixing bolt 423 and regulation jack 311 inner wall sliding connection, the equal sliding connection of both sides inner wall of fixing bolt 423 and sleeve 410, stir casing 100 when the workman makes casing 100 pass through spliced pole 300 and adjustment disc 310 rotate on sleeve 410 in the installation, adjust jack 311 in the pivoted in-process, can make regulation jack 311 and fixing bolt 423 separate, and because the even arrangement of mode at adjustment disc 310's outer wall of regulation jack 311 through annular array, consequently when adjustment disc 310 is rotating, the fixing bolt 423 of setting can insert the position to adjustment disc 310 in the regulation jack 311 and restrict, avoid the workman to rotate at will at the in-process casing 100 of fixed casing 100 and cause the hindrance to the installation.

The utility model discloses a use as follows: the technical personnel in the field firstly detect the functions of the field effect transistor to be installed, move the device to the region to be installed after determining that the device can be normally used, then fixedly connect the bottom end of the installation base 400 with the platform of the installation region through bolts, after the connection is completed, a worker can rotate the shell 100 to adjust the position angle of the pole piece, in the process of rotating the shell 100 by the worker, the installed shell 100 can drive the adjusting disc 310 to rotate through the connecting column 300, when the adjusting disc 310 rotates, the outer wall between the two groups of adjusting jacks 311 can extrude the fixing pins 423 to enable the springs 422 to contract, when the worker finishes the rotation, the installed springs 422 enable the fixing pins 423 to reset through elastic acting force and to be inserted into the adjusting jacks 311 to limit the position of the adjusting disc 310, so that the situation that the shell 100 rotates randomly when the source electrode 130, the grid electrode 131 and the drain electrode 132 are fixed by the worker can be effectively avoided, and after the worker finishes the source electrode 130, the installation screws and the installation 110 can fix the shell 100 again, thereby avoiding the situation that the shell 100 rotates in the use when the field effect of the heat sink 200 on the stability of the heat-dissipating tube 100, and the heat-dissipating plate 100 can be avoided.

The above description is only a preferred embodiment of the present invention, and any person skilled in the art may modify the present invention or modify it into an equivalent technical solution by using the technical solutions described above. Therefore, any simple modifications or equivalent replacements made according to the technical solution of the present invention belong to the scope of the claimed invention as far as possible.

Claims

1. The utility model provides a high pressure resistant junction field effect transistor, includes casing (100), the rear end outer wall both sides of casing (100) all are fixed with fixed block (110), the inner wall bottom of casing (100) is provided with P type substrate (120), the top of P type substrate (120) is provided with N type lightly doped area (121), its characterized in that: heat dissipation parts are fixed on the outer walls of two sides of the shell (100), and an installation assembly is arranged on the outer wall of the bottom end of the shell (100);

the installation component comprises a connecting column (300), an installation base (400) and a rotating part, the upper end of the connecting column (300) is connected with the outer wall of the bottom end of the shell (100), the bottom end of the rotating part is connected with the top end of the installation base (400), the rotating part comprises an adjusting disc (310), a sleeve (410), an adjusting box (420), a movable plate (421) and a spring (422), the bottom end of the connecting column (300) is fixedly connected with the top end of the adjusting disc (310), and the adjusting disc (310) is arranged inside the sleeve (410).

2. The jfet of claim 1 wherein the jfet is high voltage tolerant, wherein: and N-type heavily doped regions are formed on two sides of the outer wall of the top end of the N-type lightly doped region (121), the left N-type heavily doped region is connected with a source electrode (130) through metal aluminum, and the right N-type heavily doped region is connected with a drain electrode (132) through metal aluminum.

3. The jfet of claim 2 wherein the jfet is high voltage tolerant, wherein: the top end of the N-type lightly doped region (121) is covered with an insulating layer a, and the top end of the insulating layer is connected with a grid electrode (131) through metal aluminum.

4. The jfet of claim 3 wherein the jfet is high voltage tolerant, wherein: a groove (122) is formed in the outer wall of the top end of the N-type lightly doped region (121) and located between the grid (131) and the drain (132), an insulating layer b is fixed to the inner wall of the top end of the groove (122), and a polycrystalline silicon layer (123) is fixed to the top end of the insulating layer b.

5. The jfet of claim 1 wherein the jfet is high voltage tolerant, wherein: the heat dissipation part comprises two groups of heat conduction plates (200), the side ends of the heat conduction plates (200) are fixedly connected with the outer walls of the two sides of the shell (100) respectively, and heat dissipation fins (210) are fixed on one side, far away from the shell (100), of each heat conduction plate (200).

6. The jfet of claim 1 wherein the jfet is high voltage tolerant, wherein: the bottom of sleeve (410) and the top outer wall fixed connection of installation base (400), regulating box (420) are provided with two sets ofly, two sets ofly regulating box (420) opposite side respectively with the both sides outer wall fixed connection of sleeve (410), movable plate (421) set up in regulating box (420).

7. The jfet of claim 6 wherein the junction field effect transistor comprises: the spout has all been seted up to the upper and lower end inner wall of regulating box (420), the upper and lower end of movable plate (421) all with spout sliding connection, the one end of spring (422) is fixed at the opposite side outer wall of movable plate (421), the one end that movable plate (421) were kept away from in spring (422) all with the side inner wall fixed connection of regulating box (420).

8. The jfet of claim 7 wherein the jfet is high voltage tolerant, wherein: the movable plate (421) keep away from one side outer wall of spring (422) and be fixed with fixed bolt (423), the one end setting that movable plate (421) were kept away from in fixed bolt (423) is in the inside of sleeve (410), the outer wall of adjusting plate (310) is corresponding outside department with fixed bolt (423) and has all been seted up regulation jack (311), fixed bolt (423) and regulation jack (311) inner wall sliding connection, fixed bolt (423) and the equal sliding connection of both sides inner wall of sleeve (410).