CN217604003U

CN217604003U - Optoelectronic component, LED light source and vehicle lamp

Info

Publication number: CN217604003U
Application number: CN202221657896.7U
Authority: CN
Inventors: 高洋; 林炎楷; 郑茂铃
Original assignee: BYD Semiconductor Co Ltd
Current assignee: Yangzhou Byd Semiconductor Co ltd
Priority date: 2022-06-29
Filing date: 2022-06-29
Publication date: 2022-10-18
Anticipated expiration: 2032-06-29

Abstract

The utility model discloses a photoelectronic device, LED light source and car light, photoelectronic device includes: a circuit carrier plate; the chip is arranged on one side of the circuit carrier plate and is electrically connected with the circuit carrier plate; the circuit carrier comprises at least two first circuit layers, wherein the at least two first circuit layers are arranged on one side, facing the chip, of the circuit carrier, the first circuit layers are electrically connected with the circuit carrier plate, the first circuit layers are higher than the chip, and a filling piece is filled between the at least two first circuit layers. The first circuit layer is arranged on the circuit carrier plate and is higher than the chip, so that after the optoelectronic device is packaged, the chip can be tested through the first circuit layer, and the optoelectronic device can be welded to the circuit board through the first circuit layer, and the application range of the optoelectronic device can be expanded.

Description

Optoelectronic component, LED light source and vehicle lamp

Technical Field

The utility model belongs to the technical field of photoelectronic device technique and specifically relates to a photoelectronic device, LED light source and car light are related to.

Background

The LED light source product is used for daily and special illumination, and large-scale mass production and wide application are realized. At present, the LED light source packaging structure is composed of two electrode pads: 1 positive electrode and 1 negative electrode; and the electrode pads are all designed on the bottom or side of the light source device structure.

In the related art, in the packaging/SMT welding process, the positive electrode bonding pad and the negative electrode bonding pad of the LED light source device product are both arranged at the bottom and cannot be observed from the front side. When the packaging/SMT process is tested, a needle inserting test must be carried out from the bottom or the side surface of the LED light source device; for a multi-chip LED light source device, individual photoelectric performance tests cannot be performed for each chip, possibly resulting in partial defective product outflow. In addition, in some fields with special lighting requirements (such as back lighting of a welding substrate), the welding pad is designed at the bottom or the side of the device, so that the requirement cannot be directly met, and the requirement can be met only by secondary structural design; this results in a complicated structure, an increased volume and an increased cost.

SUMMERY OF THE UTILITY MODEL

The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a photoelectronic device is through setting up first circuit layer on the circuit support plate to first circuit layer is higher than the chip, like this at photoelectronic device encapsulation back, can test for the chip through first circuit layer.

The utility model also provides a LED light source.

The utility model discloses a car light is further provided.

An optoelectronic device according to an embodiment of the first aspect of the present invention comprises: a circuit carrier plate; the chip is arranged on one side of the circuit carrier plate and is electrically connected with the circuit carrier plate; the circuit carrier comprises at least two first circuit layers, wherein the at least two first circuit layers are arranged on one side, facing the chip, of the circuit carrier, the first circuit layers are electrically connected with the circuit carrier plate, the first circuit layers are higher than the chip, and a filling piece is filled between the at least two first circuit layers.

According to the utility model discloses photoelectronic device is through setting up first circuit layer on the circuit support board to first circuit layer is higher than the chip, like this at photoelectronic device encapsulation back, can test for the chip through first circuit layer, and photoelectronic device can be through first circuit layer welding to the circuit board on, can expand photoelectronic device's application range like this.

According to the utility model discloses a some embodiments, the height on first circuit layer is h1, the height of filler is h2, and h1 and h2 satisfy the relational expression: h1 is more than or equal to h2.

According to the utility model discloses a some embodiments, the circuit support plate includes: the chip comprises an insulating layer and a second circuit layer, wherein the second circuit layer is arranged on one side, facing the chip, of the insulating layer, and is electrically connected with the chip and the first circuit layer.

According to some embodiments of the present invention, the circuit carrier plate further comprises: and the third circuit layer is arranged on one side of the insulating layer, which deviates from the chip.

According to the utility model discloses a some embodiments, be provided with the conducting hole on the insulating layer, be provided with interconnecting link in the conducting hole, interconnecting link electricity is connected the second circuit layer with between the third circuit layer.

According to some embodiments of the present invention, the thickness of the insulating layer is h3, and h3 satisfies the relation: h3 is more than or equal to 100um and less than or equal to 500um.

According to some embodiments of the invention, the optoelectronic device further comprises: lens, lens set up in the chip deviates from one side of circuit carrier plate, the upper surface of lens with the upper surface parallel and level of packing.

According to some embodiments of the present invention, the chip is provided with a positive electrode and a negative electrode, the positive electrode and the negative electrode are disposed on a side of the chip facing the circuit carrier plate; or the positive electrode and the negative electrode are arranged on two sides of the chip, and an electric connecting wire is arranged between the positive electrode or the negative electrode and the circuit carrier plate.

According to some embodiments of the present invention, the height of the first line layer is h1, and h1 satisfies the relation: h1 is more than or equal to 200um and less than or equal to 400um.

According to a second aspect of the present invention, an LED light source includes the optoelectronic device.

According to the utility model discloses car light of third aspect embodiment, include the LED light source.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a top view of an optoelectronic device according to an embodiment of the present invention;

fig. 2 is a cross-sectional view of an optoelectronic device according to an embodiment of the present invention;

fig. 3 is a cross-sectional view of an optoelectronic device and circuit board mating according to an embodiment of the present invention.

Reference numerals:

100. an optoelectronic device;

10. a circuit carrier plate; 11. an insulating layer; 12. a second circuit layer; 13. a via hole; 14. connecting the circuit; 15. a third circuit layer;

20. a first circuit layer; 30. a chip; 40. a lens; 50. a filling member;

200. a circuit board.

Detailed Description

Embodiments of the present invention are described in detail below, and the embodiments described with reference to the drawings are exemplary.

In the following, referring to fig. 1 to fig. 3, an optoelectronic device 100 according to an embodiment of the present invention is described, and the present invention further provides an LED light source having the optoelectronic device 100.

Referring to fig. 1-3, an optoelectronic device 100 according to an embodiment of the present invention includes: the circuit structure comprises a circuit carrier 10, a chip 30 and at least two first circuit layers 20, wherein the chip 30 is disposed on one side of the circuit carrier 10, and the chip 30 and the circuit carrier 10 are electrically connected. Wherein, the chip 30 can be powered through the line carrier 10. And the chip 30 is fixed on the circuit carrier 10, the fixing material can be AuSn, tin-silver-copper solder, silver paste, etc., and the thickness of the fixing material is generally between 2-50 um.

Furthermore, at least two first circuit layers 20 are disposed on a side of the circuit carrier facing the chip 30, the first circuit layers 20 are electrically connected to the circuit carrier 10, and the first circuit layers 20 are higher than the chip 30. The at least two first circuit layers 20 are disposed on the circuit carrier 10, so that after the optoelectronic device 100 is packaged, the at least two first circuit layers can be used as package test power-on test points, and thus the package of the optoelectronic device 100 does not need to be damaged.

Still alternatively, the first circuit layer 20 may also serve as an external electrical connection point, that is, the circuit board 200 may be soldered on the optoelectronic device 100, that is, the first circuit layer 20 and the circuit board 200 are soldered. Further, in the field of some special lighting needs (like welding base plate back lighting), when adopting first circuit layer 20 to weld, the light trap of circuit board 200 is aimed at to the light emitting area, and light can all get into the light trap, avoids the light leak and promotes the light efficiency, whole applied simple structure to low cost.

Further, a plurality of chips 30 may be provided, a plurality of chips 30 are arranged on the circuit carrier 10 at intervals, and one chip 30 is added to the number of the chips 30 in the first circuit layers 20, that is, any one chip 30 is clamped between two adjacent first circuit layers 20, so that the first circuit layers 20 can conveniently supply power to each chip 30, that is, the positive electrode and the negative electrode of each chip 30 can be subjected to an electrical test, each chip 30 is tested and determined, and each 100% is guaranteed to be qualified, thereby ensuring that the whole light source meets the requirements.

And, a filler 50 is filled between at least two first circuit layers 20, and the filler 50 is typically epoxy resin, silicone, glass, or the like. By providing the filler 50, the filler 50 may protect the chip 30 and the lens 40. And the two first circuit layers 20 function as a dam to fix the packing member 50.

Therefore, by arranging the first circuit layer 20 on the circuit carrier 10, and the first circuit layer 20 is higher than the chip 30, after the optoelectronic device 100 is packaged, the chip 30 can be tested through the first circuit layer 20, and the optoelectronic device 100 can be soldered to the circuit board 200 through the first circuit layer 20, so that the application range of the optoelectronic device 100 can be expanded.

Wherein, the height of the first circuit layer 20 is h1, the height of the filling member 50 is h2, and h1 and h2 satisfy the relation: h1 is more than or equal to h2. With such an arrangement, when the heights of the first circuit layer 20 and the filler 50 are the same, that is, the upper surface of the first circuit layer 20 is flush with the upper surface of the filler 50, after the optoelectronic device 100 is packaged, the first circuit layer 20 and the circuit carrier 10 are electrically connected, so that the chip 30 and the optoelectronic device 100 are electrically connected, and thus the chip 30 is conveniently tested. And when the first circuit layer 20 is higher than the filling layer 50, namely, the first circuit layer 20 protrudes relative to the filling member 50, so that the first circuit layer 20 can be conveniently used as an electrical connection point to be welded with a circuit board.

And, as shown in fig. 2, the circuit carrier 10 includes: the chip-on-chip module comprises an insulating layer 11 and a second circuit layer 12, wherein the second circuit layer 12 is arranged on one side, facing a chip 30, of the insulating layer 11, and the second circuit layer 12 is electrically connected with the chip 30 and the first circuit layer 20. The insulating layer 11 can play a supporting role, and the second circuit layer 12 is disposed on the insulating layer 11, that is, the second circuit layer 12 can be used to realize the electrical connection between the circuit carrier 10 and the chip 30, and the circuit carrier 10 and the first circuit layer 20, so that not only the chip 30 can be directly powered through the second circuit layer 12, but also the chip 30 can be powered through the first circuit layer 20 and the second circuit layer 12, that is, the power supply positions of the optoelectronic device 100 are multiple, and thus the application range of the optoelectronic device 100 can be expanded.

In this method, a via hole 13 is formed by laser drilling or drilling on a bare board of the insulating layer 11, and then the via hole is cleaned to remove residues. Then, metal titanium sputtering is performed to form a bonding metal layer in the via hole 13 and the insulating layer 11. Dry film/wet film coating is carried out on the upper surface and the lower surface of the insulating layer 11, the part needing metal circuit copper thickening is exposed through exposure and development, then metal circuit electroplating copper thickening is carried out, and the bare board planar circuit carrier plate 10 is formed. And then, repeatedly coating a dry film/wet film on the bare board planar circuit carrier plate 10, wherein the thickness is controlled to be 200-400um, and the lower surface is coated with the dry film/wet film or not according to the structural requirements. And exposing the circuit part to be raised through exposure and development, carrying out electrocoppering thickening, then removing dry films or wet films on two surfaces of the carrier plate, etching the sputtered titanium layer to expose all the metal circuit layers, and finally carrying out metal protection treatment such as surface gold plating or gold and silver plating to form a composite structure of the circuit carrier plate 10 and the second circuit layer 20.

Further, as shown in fig. 2, the circuit carrier 10 further includes: and the third circuit layer 15, the third circuit layer 15 is arranged on one side of the insulating layer 11 departing from the chip 30. That is to say, the second circuit layer 12 and the third circuit layer 15 are disposed on two sides of the insulating layer 11, that is, the chip 30 can be supplied with power through the second circuit layer 12 on the upper side, and also can be supplied with power through the third circuit layer 15 on the lower side, that is, the power supply positions of the optoelectronic device 100 are multiple, so that the application range of the optoelectronic device 100 can be increased, and at this time, the third circuit layer 15 plays roles of electrical connection and heat dissipation. Alternatively, the third line layer 15 may be used only by connecting the first line layer 20 to an external line without being electrically connected to the second line layer 12, and in this case, the third line layer 15 may function only to dissipate heat.

Referring to fig. 2, the insulating layer 11 is provided with a via hole 13, a connection wiring 14 is provided in the via hole 13, and the connection wiring 14 is electrically connected between the second wiring layer 12 and the third wiring layer 15. That is, the second circuit layer 12 and the third circuit layer 15 disposed on two opposite sides of the insulating layer 11 are electrically connected through the connecting wire 14, further, the insulating layer 11 is provided with the via holes 13, and the connecting wire 14 is disposed in the via holes 13, so that the second circuit layer 12 and the third circuit layer 15 can be electrically connected, and the connecting wire 14 is disposed in the via holes 13 in a safe and stable manner, thereby effectively prolonging the service life of the optoelectronic device 100.

Wherein, the thickness of the insulating layer 11 is h3, and h3 satisfies the relation: h3 is more than or equal to 100um and less than or equal to 500um. With this arrangement, the thickness of the insulating layer 11 can be adjusted according to the range of use of the optoelectronic device 100. For example, when the optoelectronic device 100 is used in a small space, the thickness of the insulating layer 11 may be a little thinner, which may facilitate the arrangement of the optoelectronic device 100. When the requirement on the load capacity of the optoelectronic device 100 is high, the thickness of the insulating layer 11 may be a little thicker, so as to improve the load capacity of the optoelectronic device 100.

Further, as shown in fig. 2 and 3, the optoelectronic device 100 further includes: the lens 40, the lens 40 is disposed on a side of the chip 30 away from the circuit carrier 10, and an upper surface of the lens 40 is flush with an upper surface of the filling member 50. The lens 40 may be made of resin material or fluorescent material, and the lens 40 may emit light to satisfy different light colors and different angle requirements.

The chip 30 is provided with a positive electrode and a negative electrode, and the positive electrode and the negative electrode are disposed on one side of the chip 30 facing the circuit carrier 10. That is to say, the positive electrode and the negative electrode on the chip 30 are disposed on the same side, so that when the chip 30 is fixed on the second circuit layer 12, both the positive electrode and the negative electrode can be electrically connected with the second circuit layer 12, which facilitates the arrangement of the chip 30, and the electrical connection stability of the chip 30 is better.

Or, the positive electrode and the negative electrode are disposed on two sides of the chip 30, and an electrical connection line is disposed between the positive electrode or the negative electrode and the circuit carrier 10. That is, both sides of the chip 30 are respectively provided with a positive electrode and a negative electrode, so that when the chip 30 is disposed on the second wiring layer 12, the other side of the chip 30 can be electrically connected with the second wiring layer 12 through an electrical connection line, so that electrical connection between the chip 30 and the second wiring layer 12 can be achieved.

Wherein, the height of the first circuit layer 20 is h1, and h1 satisfies the relation: h1 is more than or equal to 200um and less than or equal to 400um. The first circuit layer 20 is protruded relative to the circuit carrier 10, and the thickness of the first circuit layer 20 is the superposition of the chip 30 and the lens 40, so that the thickness of the first circuit layer 20 can be adjusted according to the application or the application range. For example, when the optoelectronic device 100 is used in a small space, the thickness of the first circuit layer 20 may be a little thinner, which may facilitate the arrangement of the optoelectronic device 100, and the thicknesses of the chip 30 and the lens 40 may be correspondingly reduced. When the range of use of the optoelectronic device 100 is not limited, or the thickness requirement of the optoelectronic device 100 is low, the thickness of the first circuit layer 20 may be set to be thicker.

According to a second aspect of the present invention, an LED light source includes the optoelectronic device 100 described above. That is, the LED light source may be constituted by the optoelectronic device 100 and the wiring board 200.

And, according to the utility model discloses third aspect embodiment's car light, include foretell LED light source. The LED light source has the characteristics of high brightness, rich color types, low power consumption and long service life, and is applied to the automobile lamp, so that the automobile lamp is long in service life and wide in application range.

In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like, indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

In the description of the present specification, reference to the description of "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.

While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.

Claims

1. An optoelectronic device (100), comprising:

a circuit carrier (10);

the chip (30), the chip (30) is arranged on one side of the circuit carrier plate (10), and the chip (30) is electrically connected with the circuit carrier plate (10);

the circuit board comprises at least two first circuit layers (20), the at least two first circuit layers are arranged on one side, facing the chip (30), of the circuit carrier plate, the first circuit layers are electrically connected with the circuit carrier plate (10), the first circuit layers are higher than the chip (30), and filling pieces are filled between the at least two first circuit layers.

2. The optoelectronic device (100) according to claim 1, wherein the first line layer has a height h1, the filler has a height h2, and h1 and h2 satisfy the relationship: h1 is more than or equal to h2.

3. The optoelectronic device (100) according to claim 1, wherein the line carrier (10) comprises: the chip comprises an insulating layer (11) and a second circuit layer (12), wherein the second circuit layer (12) is arranged on one side, facing the chip (30), of the insulating layer (11), and the second circuit layer (12) is electrically connected with the chip (30) and the first circuit layer.

4. The optoelectronic device (100) according to claim 3, wherein the line carrier (10) further comprises: a third circuit layer (15), wherein the third circuit layer (15) is arranged on one side of the insulating layer (11) departing from the chip (30).

5. An optoelectronic device (100) according to claim 4, wherein a via hole (13) is provided on the insulating layer (11), a connection line (14) is provided in the via hole (13), the connection line (14) being electrically connected between the second line layer (12) and the third line layer (15).

6. The optoelectronic device (100) according to claim 3, wherein the insulating layer (11) has a thickness h3, h3 satisfying the relation: h3 is more than or equal to 100um and less than or equal to 500um.

7. The optoelectronic device (100) according to claim 1, further comprising: a lens (40), wherein the lens (40) is arranged on one side of the chip (30) departing from the circuit carrier plate (10), and the upper surface of the lens (40) is flush with the upper surface of the filling piece.

8. The optoelectronic component (100) according to claim 1, wherein a positive electrode and a negative electrode are arranged on the chip (30), which are arranged on a side of the chip (30) facing the line carrier (10); or the like, or, alternatively,

the positive electrode and the negative electrode are arranged on two sides of the chip (30), and an electric connection wire is arranged between the positive electrode or the negative electrode and the circuit carrier plate (10).

9. The optoelectronic device (100) according to claim 1, wherein the first line layer has a height h1, h1 satisfying the relation: h1 is more than or equal to 200um and less than or equal to 400um.

10. An LED light source, comprising: an optoelectronic device (100) as claimed in any one of claims 1 to 9.

11. A vehicle lamp, characterized by comprising: the LED light source of claim 10.