CN217590769U - SAW resonator of aluminum nitride-based heterogeneous acoustic layer - Google Patents
SAW resonator of aluminum nitride-based heterogeneous acoustic layer Download PDFInfo
- Publication number
- CN217590769U CN217590769U CN202221262750.2U CN202221262750U CN217590769U CN 217590769 U CN217590769 U CN 217590769U CN 202221262750 U CN202221262750 U CN 202221262750U CN 217590769 U CN217590769 U CN 217590769U
- Authority
- CN
- China
- Prior art keywords
- acoustic
- layer
- input
- output
- idt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application discloses a SAW resonator of an aluminum nitride-based heterogeneous acoustic layer, which is used for improving the performance of the resonator. The resonator of the application comprises: the device comprises a heterogeneous acoustic layer HAL structure, an input interdigital transducer IDT, an output IDT, a first phononic crystal and a plurality of second phononic crystals; the HAL structure comprises a piezoelectric layer and a composite substrate, wherein the piezoelectric material of the piezoelectric layer is a scandium-doped aluminum nitride material; the input IDT and the output IDT are respectively arranged on the piezoelectric layer; a first phononic crystal embedded in the piezoelectric layer and located between the input IDT and the output IDT for constructing a defect zone by the first phononic crystal such that an acoustic wave of the input IDT propagates through the defect zone to the output IDT; the input IDT includes an input bus bar and the output IDT includes an output bus bar; the plurality of second photonic crystals are respectively embedded into the piezoelectric layer, are respectively positioned at two ends of the input bus bar and two ends of the output bus bar, and are used for reflecting sound waves through the second photonic crystals.
Description
Technical Field
The application relates to the technical field of communication, in particular to an SAW resonator of an aluminum nitride-based heterogeneous acoustic layer.
Background
The SAW resonator is a surface acoustic wave resonator for short, and is a special filter device manufactured by utilizing the piezoelectric effect and the physical characteristics of surface acoustic wave propagation. The basic structure of a SAW resonator is to fabricate two acoustic-electric transducers, i.e., interdigital transducers (IDTs), on a polished surface of a substrate material having piezoelectric properties, which are used as a transmitting Transducer and a receiving Transducer, respectively. The IDT at the transmitting end converts the electric signals into acoustic waves which are propagated on the surface of the SAW resonator substrate, and the acoustic waves received by the IDT at the receiving end are converted into electric signals to be output, so that filtering is realized.
At present, various novel SAW sensing systems based on SAW resonators are widely applied, such as toxic gas environment sensing, temperature sensing under high-temperature working conditions, pressure sensing under extreme environments, tire pressure monitoring, portable cancer diagnosis and the like. Therefore, the performance of the SAW resonator, which is a core component of the SAW sensing system, directly affects the application index of the SAW sensing system. Among them, the quality factor (Q value) of the SAW resonator has the greatest influence and is most important.
However, because the conventional SAW resonator mostly adopts lithium niobate, lithium tantalate, quartz crystal, piezoelectric ceramic and other piezoelectric materials as substrate materials, the Q value of the SAW resonator is limited, and a SAW resonator with higher Q value performance needs to be designed urgently.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problems, the present application provides a SAW resonator of an aluminum nitride-based heterogeneous acoustic layer for improving resonator performance.
The application provides a SAW resonator of aluminium nitride base heterogeneous acoustic layer includes:
the device comprises a heterogeneous acoustic layer HAL structure, an input IDT, an output IDT, a first reflection grating, a second reflection grating, a first phononic crystal and a plurality of second phononic crystals;
the HAL structure comprises a piezoelectric layer and a composite substrate, wherein the piezoelectric material of the piezoelectric layer is a scandium-doped aluminum nitride material;
the input IDT and the output IDT are respectively disposed on the piezoelectric layer;
the first reflection grating is arranged outside the input IDT, the second reflection grating is arranged outside the output IDT, and the first reflection grating is opposite to the second reflection grating in position;
the first photonic crystal is embedded in the piezoelectric layer and located between the input IDT and the output IDT for constructing a defect band through the first photonic crystal such that an acoustic wave of the input IDT propagates through the defect band to the output IDT;
the input IDT includes an input bus bar and the output IDT includes an output bus bar;
the plurality of second photonic crystals are respectively embedded into the piezoelectric layer, respectively positioned at two ends of the input bus bar and two ends of the output bus bar, and used for reflecting sound waves through the second photonic crystals.
Optionally, the composite base comprises a composite film and a support substrate;
the composite film comprises a low-sound-velocity layer and a high-sound-velocity layer;
the upper surface of the low-acoustic-velocity layer is connected with the piezoelectric layer, the lower surface of the low-acoustic-velocity layer is sequentially connected with the high-acoustic-velocity layer and the supporting substrate, and the low-acoustic-velocity layer and the high-acoustic-velocity layer are used for restraining acoustic waves in the piezoelectric layer and the low-acoustic-velocity layer.
Optionally, the low acoustic velocity layer is made of SiO 2 Preparing materials;
the high acoustic velocity layer is made of an aluminum nitride material;
the support substrate is made of a Si material.
Optionally, the piezoelectric layer has a thickness dimension of 0.3 λ;
the thickness of the low sound velocity layer is 0.3 lambda;
the thickness of the high-speed sound layer is 0.4 lambda;
the support substrate has a thickness dimension of 8 λ, where λ is a wavelength.
Optionally, the input IDT further comprises an input electrode;
the number of the input bus bars is 2, and the 2 input bus bars are respectively arranged on two sides of the input electrode;
the output IDT further comprises an output electrode;
the number of the output bus bars is 2, and the 2 output bus bars are respectively arranged at two sides of the output electrode;
the first reflection gate and the second reflection gate are respectively disposed outside the input electrode and the output electrode.
Optionally, the number of the second photonic crystals is 4;
4 second photonic crystals are respectively disposed outside the 2 input bus bars and the 2 output bus bars.
Optionally, the piezoelectric layer is made of Sc-doped AlScN single crystal material.
Optionally, the first phononic crystal and the second phononic crystal are micro-cavity area arrays respectively formed by combining a plurality of filling units.
Optionally, the filler unit is made of an epoxy resin material.
Optionally, the filler cells are made of a polystyrene material.
According to the technical scheme, the method has the following advantages:
the SAW resonator comprises a heterogeneous acoustic layer HAL structure, an input IDT, an output IDT, a first reflection grid, a second reflection grid, a first phononic crystal and a plurality of second phononic crystals; the HAL structure comprises a piezoelectric layer and a composite substrate, wherein the piezoelectric material of the piezoelectric layer is a scandium-doped aluminum nitride material; the input IDT and the output IDT are respectively arranged on the piezoelectric layer; the first reflection grating is arranged outside the input IDT, the second reflection grating is arranged outside the output IDT, and the first reflection grating and the second reflection grating are opposite in position; a first phonon crystal embedded in the piezoelectric layer and located between the input IDT and the output IDT for constructing a defect zone through the first phonon crystal such that an acoustic wave of the input IDT propagates through the defect zone to the output IDT; the input IDT includes an input bus bar and the output IDT includes an output bus bar; the plurality of second photonic crystals are respectively embedded into the voltage layer, are respectively positioned at two ends of the input bus bar and two ends of the output bus bar, and are used for reflecting sound waves through the second photonic crystals.
In the application, the scandium-doped aluminum nitride has the characteristics of high thermal conductivity, high hardness, high melting point, high chemical stability, low thermal expansion coefficient and the like, so that the scandium-doped aluminum nitride can be used as a piezoelectric material to improve the higher acoustic surface wave propagation speed. In addition, set up first phonon crystal structure defect area between input IDT and output IDT, guide the acoustic wave and propagate through the defect area between two IDTs, reduce the side overflow of acoustic wave energy, simultaneously, distribute and set up the second phonon crystal in busbar both sides, utilize the acoustic wave forbidden band characteristic, thereby the lateral leakage of lateral overflow acoustic wave energy reflects and reduces the acoustic wave energy, improve the effective propagation of acoustic wave from input IDT to output IDT, and then improve the Q value of whole SAW resonator, improve SAW resonator's performance.
Drawings
FIG. 1 is a schematic perspective view of a SAW resonator with an aluminum nitride-based heterogeneous acoustic layer provided herein;
FIG. 2 is a schematic front view of a SAW resonator having an aluminum nitride based heterogeneous acoustic layer as provided herein;
fig. 3 is a schematic top view of a SAW resonator of an aluminum nitride based heterogeneous acoustic layer provided in the present application.
Detailed Description
The application provides a SAW resonator of an aluminum nitride-based heterogeneous acoustic layer, which is used for improving the Q value of the SAW resonator, so that the performance of the SAW resonator is improved.
In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are used only for explaining relative positional relationships between the respective members or components, and do not particularly limit specific mounting orientations of the respective members or components.
Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as the case may be.
Furthermore, the terms "mounted," "disposed," "provided," "connected," and "connected" are to be construed broadly. For example, it may be a fixed connection, a removable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as the case may be.
In addition, the structures, the proportions, the sizes, and the like, which are illustrated in the accompanying drawings and described in the present application, are intended to be considered illustrative and not restrictive, and therefore, not limiting, since those skilled in the art will understand and read the present application, it is understood that any modifications of the structures, changes in the proportions, or adjustments in the sizes, which are not necessarily essential to the practice of the present application, are intended to be within the scope of the present disclosure without affecting the efficacy and attainment of the same.
Furthermore, the terms "first," "second," "third," and the like (if any) may be used herein to distinguish one element from another, and not necessarily to describe a particular order or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments described herein are capable of operation in other sequences than described or illustrated herein.
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings in the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Referring to fig. 1 to 3, the SAW resonator of the aluminum nitride heterogeneous acoustic layer provided by the present application includes:
the heterogeneous acoustic layer HAL structure 1, the input IDT2, the output IDT3, the first reflection grating 6, the second reflection grating 7, the first phononic crystal 4 and a plurality of second phononic crystals 5; the HAL structure 1 comprises a piezoelectric layer 11 and a composite substrate, wherein the piezoelectric material of the piezoelectric layer 11 is a scandium-doped aluminum nitride material; the input IDT2 and the output IDT3 are respectively provided on the piezoelectric layer 11; the first reflection grating 6 is arranged outside the input IDT2, the second reflection grating 7 is arranged outside the output IDT3, and the first reflection grating 6 is opposite to the second reflection grating 7; (ii) a The first phononic crystal 4 is embedded in the piezoelectric layer 11 and located between the input IDT2 and the output IDT3 for constructing a defect zone by the first phononic crystal 4 so that the acoustic wave of the input IDT2 propagates to the output IDT3 through the defect zone; the input IDT2 includes an input bus bar 21, and the output IDT3 includes an output bus bar 31; the plurality of second photonic crystals 5 are respectively embedded in the piezoelectric layer 11 and respectively located at two ends of the input bus bar 21 and two ends of the output bus bar 31, for reflecting the acoustic wave through the second photonic crystals 5.
In the present embodiment, a Heterogeneous Acoustic Layer (HAL) structure is a structure including the piezoelectric Layer 11 and the composite substrate. The piezoelectric layer 11 may be made of an aluminum nitride (AlN) -based material, for example, the aluminum nitride-based material may include an aluminum nitride material, a scandium (Sc) -doped aluminum nitride material, a chromium (ge) -doped aluminum nitride material, and the like. In this embodiment, the piezoelectric layer 11 is specifically made of a scandium (Sc) -doped aluminum nitride material. The composite substrate is located below the piezoelectric layer 11, and the composite substrate can be configured into a composite supporting substrate with high acoustic wave energy confinement characteristics, so that acoustic wave energy can be confined in the piezoelectric layer 11 as much as possible, and leakage of the acoustic wave energy is reduced. For example, the composite substrate may be configured as a bragg reflector layer structure or a high-low acoustic velocity layer structure, or may be configured as other structures, which are not limited herein.
The input IDT2 and the output IDT3 are respectively arranged at two ends of the upper surface of the piezoelectric layer 11, a first reflection grating 6 is arranged on the outer side of the input IDT2 (namely, the left side of the input IDT2 shown in fig. 1), and a second reflection grating 7 is arranged on the outer side of the output IDT2 far away from the input IDT (namely, the right side of the output IDT3 shown in fig. 1), wherein the first reflection grating 6 and the second reflection grating 7 are respectively used for reflecting the acoustic wave energy conducted by the input IDT2 and the output IDT3. And, a first phononic crystal 4 embedded in the piezoelectric layer 11 is disposed between the input IDT2 and the output IDT3.
Generally, a photonic crystal is an artificial crystal whose elastic constants are periodically arranged in space, and has a waveguide characteristic that acoustic waves with specific frequencies can propagate, that is, a characteristic that, in operation, elastic waves within a certain band gap range are suppressed when propagating in the photonic crystal, and elastic waves within a certain other frequency range can propagate. Therefore, when the first photonic crystals 4 arranged periodically are provided, the defective band having regularity from the input IDT2 to the output IDT3 can be artificially designed in the periodic structure by using the waveguide characteristics of the photonic crystals, so that the elastic wave that would otherwise not propagate in the band gap band can efficiently propagate from the input IDT2 to the output IDT3 through the defective band. Therefore, the effective transmission of the acoustic wave energy of the resonator is improved by restricting the acoustic wave energy in the band gap frequency range in the defect band of the first phononic crystal 4 for transmission.
Further, since the input IDT2 and the output IDT3 have their corresponding input bus bars 21 and output bus bars 31, respectively, the second photonic crystals 5 may also be provided outside the input bus bars 21 and the output bus bars 31, respectively. The periodic structure of the second photonic crystal 5 is adjusted by artificial design by utilizing the propagation characteristics of strong reflection and non-propagable of the acoustic wave in a specific frequency band in the photonic crystal, so that the second photonic crystal 5 can reflect the acoustic wave leaked from the input IDT2 or the output IDT3 to reduce the leakage of the acoustic wave, and the acoustic wave energy is confined in the piezoelectric layer 11 as much as possible.
In this embodiment, the piezoelectric layer 11 made of an aluminum nitride-based material is first provided, and the propagation speed of the surface acoustic wave is increased by using the characteristics of aluminum nitride, such as high thermal conductivity, high hardness, high melting point, high chemical stability, and low thermal expansion coefficient. Then, by disposing the composite substrate below the piezoelectric layer 11, the acoustic wave is confined in the piezoelectric layer 11 as much as possible, the longitudinal leakage of the acoustic wave energy is reduced, while disposing the first phononic crystal 4 in the input IDT2 and the output IDT3, the defect zone is structured so that the surface acoustic wave energy propagates along the defect zone, and further, the second phononic crystal 5 is disposed outside the input bus bar 21 and the output bus bar 31 for reflecting the surface acoustic wave. Thus, in operation, after the input IDT2 converts the electrical signal into an acoustic wave, the acoustic wave is constrained by the composite substrate, the first phonon crystal 4 and the second phonon crystal 5, propagates along the defect band of the first phonon crystal 4 into the output IDT3, and then causes the output IDT3 to convert the received acoustic wave into an electrical signal for output. The whole process realizes the transverse and longitudinal constraint of the acoustic wave, reduces the loss of acoustic wave energy, and thus can improve the Q value of the SAW resonator and improve the performance of the SAW resonator.
Optionally, the composite base comprises a composite film 12 and a support substrate 13; the composite film 12 includes a low acoustic velocity layer 121 and a high acoustic velocity layer 122; the low acoustic velocity layer 121 has an upper surface connected to the piezoelectric layer 11 and a lower surface connected to the high acoustic velocity layer 122 and the support substrate 13 in this order, and the low acoustic velocity layer 121 and the high acoustic velocity layer 122 serve to confine acoustic waves in the piezoelectric layer 11 and the low acoustic velocity layer 121.
In the present embodiment, a composite base composed of the low acoustic velocity layer 121, the high acoustic velocity layer 122, and the support substrate 13 is provided below the piezoelectric layer 11. Note that the sound velocities of the low sound velocity layer 121 and the high sound velocity layer 122 are relatively high, that is, the propagation sound velocity of the low sound velocity layer 121 is lower than the propagation sound velocity of the high sound velocity layer 122. Thus, in the present embodiment, the acoustic wave can be confined in the low acoustic velocity layer 121 and the piezoelectric layer 11 above the low acoustic velocity layer 121 by utilizing the characteristic that the acoustic wave is guided to the low acoustic velocity layer 121 when propagating at the interface between the high acoustic velocity layer 122 and the low acoustic velocity layer 121, and the leakage of the acoustic wave to the supporting substrate 13 below can be reduced, thereby reducing the loss of acoustic wave energy.
Optionally, the low sound velocity layer 121 is made of SiO 2 Preparing materials; the high sound velocity layer 122 is made of an aluminum nitride material; the support substrate 13 is made of Si material.
In this embodiment, the high acoustic velocity layer 122 is constructed by using an AlN material, which has the characteristics of high electromechanical coupling coefficient, high acoustic velocity, and low loss. At the same time, siO is used 2 Material construction of the low acoustic velocity layer 121Can make AlN-SiO 2 The high-low sound velocity characteristic almost completely concentrates sound waves on the surface of the piezoelectric layer 11, so that the SAW resonator has a high Q value and the resonator performance is improved.
Optionally, the piezoelectric layer 11 has a thickness dimension of 0.3 λ; the thickness dimension of the low sound velocity layer 121 is 0.3 λ; the thickness dimension of the high sound velocity layer 122 is 0.4 λ; the support substrate 13 has a thickness dimension of 8 λ, where λ is the wavelength.
In this embodiment, the piezoelectric layer 11 is an AlN thin film with a thickness of 0.3 λ, and the low acoustic velocity layer 121 is SiO with a thickness of 0.3 λ 2 The thin film, the high acoustic velocity layer 122 is an AlN thin film with a thickness of 0.4 lambda, and the supporting substrate 13 is made of Si with a thickness of 8 lambda. Using SiO 2 The AlN structure of the low acoustic velocity layer 121 and the high acoustic velocity layer 122, in addition to the Si as the supporting substrate 13, can better form the reflecting layer, better confine the acoustic wave in the piezoelectric layer 11 and the low acoustic velocity layer 121, and reduce the energy loss of the resonator in the depth direction. It should be noted that, the thickness and the material of each layer of the resonator may also be designed into other dimensions and materials according to the actual use condition of the resonator, and the details are not limited herein.
Optionally, the input IDT2 further includes an input electrode 22; the number of the input bus bars 21 is 2, and the 2 input bus bars 21 are respectively arranged at two sides of the input electrode 22; the output IDT3 further includes an output electrode 32; the number of the output bus bars 31 is 2, and 2 output bus bars 31 are respectively arranged at two sides of the output electrode 32; the first reflection gate 6 and the second reflection gate 7 are disposed outside the input electrode 22 and the output electrode 32, respectively.
In the present embodiment, the input IDT2 specifically includes input electrodes 22 and 2 input bus bars 21; the output IDT3 specifically includes output electrodes 32 and 2 output bus bars 31. The input IDT2 and the output IDT3 are provided on the upper surface of the piezoelectric layer 11 and at both ends of the upper surface, respectively, specifically, two input bus bars 21 are provided on the upper and lower sides of the input electrode 22, respectively, half-surrounding the input electrode 22, and a first reflection grating 6 is provided on the left side of the input electrode 22 for reflecting an acoustic wave. Similarly, two output bus bars 31 are provided on the upper and lower sides of the output electrode 32, respectively, and a second reflection gate 7 is provided on the right side of the output electrode 32. Further, second photonic crystals 5 are provided on the outer sides of the input bus bar 21 and the output bus bar 31, respectively, for reflecting acoustic waves.
In operation, an electric signal input by the input IDT2 is converted into an acoustic wave, the acoustic wave propagates through the first phononic crystal 4 to the output IDT3 in the piezoelectric layer 11, and at this time, the acoustic wave is effectively propagated between the input IDT2 and the first phononic crystal 4 and the output IDT3 due to the reflection action of the first reflection grating 6, the second phononic crystal 5 and the second reflection grating 7 on the acoustic wave, so that the leakage loss of the acoustic wave can be reduced, and the resonator performance can be improved.
Optionally, the number of the second photonic crystals 5 is 4; 4 of the second photonic crystals 5 are respectively disposed outside the 2 input bus bars 21 and the 2 output bus bars 31.
In this embodiment, specifically, 4 second photonic crystals 5 may be provided, and each second photonic crystal 5 is disposed outside the bus bar and is used to reflect the sound wave outside the bus bar, so as to concentrate the sound wave energy to the inside of the bus bar and the first photonic crystal 4 for propagation, thereby reducing the lateral leakage of the sound wave energy.
Optionally, the piezoelectric layer 11 is made of Sc-doped AlScN single crystal material.
In the present embodiment, in order to achieve the high frequency and low insertion loss of the SAW resonator, it is necessary to improve the piezoelectric performance of the piezoelectric material. Since the piezoelectric performance of the Sc-doped AlN piezoelectric film is significantly improved compared to that of the AlN piezoelectric film, sc-doped AlN material may be used as the material of the piezoelectric layer 11 to improve the SAW resonator performance.
Optionally, the first phonon crystal 4 and the second phonon crystal 5 are respectively a micro-cavity area array formed by combining a plurality of filling units.
In this embodiment, the first phononic crystal 4 and the second phononic crystal 5 are artificial crystals arranged periodically, and specifically may be a microcavity area array formed by periodically arranging a plurality of filling units, each filling unit is made of a waveguide material and is embedded in the piezoelectric layer 11, and is configured to perform reflection confinement or propagation on an elastic wave through the waveguide material. It should be noted that the structure of the microcavity array in a periodic structure formed by the plurality of filling units can be artificially designed and controlled, so that the phononic crystal formed by the periodic structure can reflect or propagate sound waves by adjusting the periodic structure, thereby achieving the purpose of restricting sound energy.
Optionally, the filler unit is made of a Shape Memory Alloy (SMA), an epoxy material or a polystyrene material.
In this embodiment, the waveguide material of the filling unit may be made of Shape Memory Alloy (SMA), epoxy resin, or polystyrene material, so as to reduce the possibility of total reflection of the acoustic wave in the microcavity array of the phononic crystal due to the excessively large impedance of the acoustic wave, and at the same time, the propagation acoustic velocity of the waveguide material of the filling unit may be close to or less than the acoustic velocity of the piezoelectric layer 11, thereby improving the constraint on the acoustic energy. It should be noted that the filling unit may also be made of other waveguide materials, and is not limited herein.
It is intended that the foregoing description of the disclosed embodiments enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A SAW resonator of an aluminum nitride based heterogeneous acoustic layer, the SAW resonator comprising:
the device comprises a heterogeneous acoustic layer HAL structure, an input IDT, an output IDT, a first reflection grating, a second reflection grating, a first phononic crystal and a plurality of second phononic crystals;
the HAL structure comprises a piezoelectric layer and a composite substrate, wherein the piezoelectric material of the piezoelectric layer is a scandium-doped aluminum nitride material;
the input IDT and the output IDT are respectively disposed on the piezoelectric layer;
the first reflection grating is arranged outside the input IDT, the second reflection grating is arranged outside the output IDT, and the first reflection grating and the second reflection grating are opposite in position;
the first phononic crystal is embedded in the piezoelectric layer and located between the input IDT and the output IDT for constructing a defect zone through the first phononic crystal such that an acoustic wave of the input IDT propagates through the defect zone to the output IDT;
the input IDT includes an input bus bar and the output IDT includes an output bus bar;
the plurality of second photonic crystals are respectively embedded into the piezoelectric layer, respectively positioned at two ends of the input bus bar and two ends of the output bus bar, and used for reflecting sound waves through the second photonic crystals.
2. A SAW resonator according to claim 1, wherein the composite base comprises a composite membrane and a supporting substrate;
the composite film comprises a low-acoustic-velocity layer and a high-acoustic-velocity layer;
the upper surface of the low-acoustic-velocity layer is connected with the piezoelectric layer, the lower surface of the low-acoustic-velocity layer is sequentially connected with the high-acoustic-velocity layer and the supporting substrate, and the low-acoustic-velocity layer and the high-acoustic-velocity layer are used for restraining acoustic waves in the piezoelectric layer and the low-acoustic-velocity layer.
3. The SAW resonator of claim 2, wherein the low acoustic velocity layer is formed of SiO 2 Preparing materials;
the high acoustic velocity layer is made of an aluminum nitride material;
the support substrate is made of a Si material.
4. A SAW resonator according to claim 3, characterized in that the thickness dimension of the piezoelectric layer is 0.3 λ;
the thickness of the low acoustic speed layer is 0.3 lambda;
the thickness of the high-speed sound layer is 0.4 lambda;
the support substrate has a thickness dimension of 8 λ, where λ is a wavelength.
5. The SAW resonator of any one of claims 1-4, wherein the input IDT further comprises an input electrode;
the number of the input bus bars is 2, and the 2 input bus bars are respectively arranged at two sides of the input electrode;
the output IDT further comprises an output electrode;
the number of the output bus bars is 2, and the 2 output bus bars are respectively arranged at two sides of the output electrode;
the first reflection gate and the second reflection gate are respectively disposed outside the input electrode and the output electrode.
6. The SAW resonator of claim 5, wherein the second photonic crystal is 4 in number;
4 second photonic crystals are respectively arranged on the outer sides of the 2 input bus bars and the 2 output bus bars.
7. SAW resonator according to any of claims 1 to 4, characterized in that the piezoelectric layer is made of Sc-doped AlScN single crystal material.
8. The SAW resonator according to any of claims 1-4, wherein the first and second photonic crystals are each a microcavity area array composed of a combination of a plurality of filling units.
9. A SAW resonator according to claim 8, wherein the filler unit is made of an epoxy material.
10. A SAW resonator according to claim 8, wherein the filler element is made of a polystyrene material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221262750.2U CN217590769U (en) | 2022-05-23 | 2022-05-23 | SAW resonator of aluminum nitride-based heterogeneous acoustic layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221262750.2U CN217590769U (en) | 2022-05-23 | 2022-05-23 | SAW resonator of aluminum nitride-based heterogeneous acoustic layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217590769U true CN217590769U (en) | 2022-10-14 |
Family
ID=83555390
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221262750.2U Active CN217590769U (en) | 2022-05-23 | 2022-05-23 | SAW resonator of aluminum nitride-based heterogeneous acoustic layer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217590769U (en) |
-
2022
- 2022-05-23 CN CN202221262750.2U patent/CN217590769U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN114928346A (en) | SAW resonator of aluminum nitride-based heterogeneous acoustic layer | |
| EP2773040B1 (en) | Surface acoustic wave device | |
| JP5392258B2 (en) | Sheet wave element and electronic device using the same | |
| US7659653B2 (en) | Acoustic wave device and filter | |
| CN1902817B (en) | Boundary acoustic wave device | |
| US11177791B2 (en) | High quality factor transducers for surface acoustic wave devices | |
| KR100614547B1 (en) | Surface acoustic wave device and filter using the same | |
| JP3851336B1 (en) | Surface acoustic wave device | |
| CN109787579B (en) | SAW resonator with reduce spurious function | |
| WO2017132184A1 (en) | Guided surface acoustic wave device providing spurious mode rejection | |
| US8035463B2 (en) | Lamb-wave resonator and oscillator | |
| EP1722473A1 (en) | Boundary acoustic wave device | |
| CN104205632A (en) | Laterally coupled bulk acoustic wave filter with improved passband characteristics | |
| KR20190039773A (en) | Seismic wave device, front end circuit and communication device | |
| CN101865884B (en) | Single-mode protruding double-end resonant surface acoustic wave detector | |
| JP2014504827A (en) | Surface acoustic wave filter | |
| KR100676152B1 (en) | Surface acoustic wave device | |
| He et al. | Manipulation of SAW slowness shape using low-cut LT/quartz structure for transverse resonance suppression without k 2 deterioration | |
| CN217590769U (en) | SAW resonator of aluminum nitride-based heterogeneous acoustic layer | |
| JP2013168864A (en) | Elastic surface wave element and electronic component | |
| CN114710133B (en) | Acoustic longitudinal shear wave resonator based on lithium niobate monocrystal film | |
| CN116232270A (en) | High-frequency multilayer film surface acoustic wave resonator | |
| CN115425942A (en) | Surface acoustic wave device | |
| CN112821878B (en) | Pseudo-mode suppression type radio frequency resonator structure | |
| KR102607899B1 (en) | elastic wave device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |