CN217546391U - Stretchable circuit board and electronic device - Google Patents
Stretchable circuit board and electronic device Download PDFInfo
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- CN217546391U CN217546391U CN202122987430.5U CN202122987430U CN217546391U CN 217546391 U CN217546391 U CN 217546391U CN 202122987430 U CN202122987430 U CN 202122987430U CN 217546391 U CN217546391 U CN 217546391U
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Abstract
The embodiment of the application provides a stretchable circuit board and electronic equipment, relates to the technical field of stretchable electronic products, and can realize accurate positioning connection of shorter distances between components on the premise of higher stretchable performance. A stretchable circuit board comprising: a substrate layer; the electronic components are positioned on the surface of one side of the substrate layer and are arranged at intervals, and each electronic component comprises a supporting part and an electronic component positioned on one side of the supporting part, which is far away from the substrate layer; the electronic components of two different electronic assemblies which are arranged at intervals are electrically connected through the nano wire, and the nano wire and the substrate layer are arranged at intervals.
Description
Technical Field
The present application relates to the field of stretchable electronics, and more particularly to a stretchable circuit board and an electronic device.
Background
With the wide application of flexible stretchable electronic products in the fields of display, wearable, biological detection and the like, higher requirements are also put forward on the integration level of electronic elements of the stretchable electronic products, and the traditional connection mode of metal wires, organic conductive materials, liquid metal or metal electrodes and the like cannot realize accurate positioning connection of short distances between components on the premise of higher stretchable performance due to larger size.
SUMMERY OF THE UTILITY MODEL
A stretchable circuit board and an electronic device can realize accurate positioning connection of short distance between components on the premise of higher stretchable performance.
In a first aspect, a stretchable circuit board is provided, comprising: a substrate layer; the electronic assemblies are positioned on the surface of one side of the substrate layer and are arranged at intervals, and each electronic assembly comprises a supporting part and an electronic component positioned on one side of the supporting part, which is far away from the substrate layer; the electronic components of two different electronic assemblies which are arranged at intervals are electrically connected through the nano wire, and the nano wire and the substrate layer are arranged at intervals.
In a possible embodiment, the distance between the nanowires and the substrate layer is greater than or equal to the thickness of the support.
In one possible embodiment, the nanowire has a curved structure.
In one possible embodiment, the nanowires are arranged in suspension.
In one possible embodiment, the stretchable circuit board further comprises: and the filling material is filled among the electronic components, coats the nanowires and has an elastic modulus smaller than that of the substrate layer.
In one possible embodiment, the nanowires are alloyed nanowires.
In one possible embodiment, the alloyed nanowire is an alloyed nanowire composed of a nanowire body and an alloyed metal; the nanowire body is a silicon nanowire, a germanium nanowire or a silicon-germanium nanowire; the alloying metal is nickel, aluminum or titanium.
In one possible embodiment, the material of the support and/or substrate layer is polydimethylsiloxane PDMS.
In one possible embodiment, the support part is a unitary structure with the substrate layer, the support part being a protrusion on the substrate layer.
In one possible embodiment, the electronic component comprises a transistor.
In one possible embodiment, the electronic component further includes a light-emitting device.
In a second aspect, there is provided a stretchable circuit board comprising: a substrate layer; the electronic device comprises a substrate layer, a first electronic assembly and a second electronic assembly, wherein the substrate layer is arranged on the surface of one side of the substrate layer; the electronic components of the first electronic assembly and the electronic components of the second electronic assembly are electrically connected through the first nanowires, and the first nanowires and the substrate layer are arranged at intervals.
In a possible embodiment, the distance between the first nanowire and the substrate layer is greater than or equal to the thickness of the support.
In one possible embodiment, the first nanowire has a bent structure.
In one of the possible embodiments thereof, the first nanowire is arranged in a suspended mode.
In one possible embodiment, the stretchable circuit board further comprises: and the filling material is filled between the first electronic component and the second electronic component, the filling material coats the first nanowire, and the elastic modulus of the filling material is smaller than that of the substrate layer.
In one possible embodiment, the first nanowire is an alloyed first nanowire.
In one possible embodiment, the alloyed first nanowire is an alloyed first nanowire composed of a first nanowire body and an alloyed metal; the first nanowire body is a silicon first nanowire, a germanium first nanowire or a silicon-germanium first nanowire; the alloying metal is nickel, aluminum or titanium.
In one possible embodiment, the material of the support and/or substrate layer is polydimethylsiloxane PDMS.
In one possible embodiment, the support part is a unitary structure with the substrate layer, the support part being a protrusion on the substrate layer.
In one possible embodiment, the electronic component comprises a transistor.
In one possible embodiment, the electronic component further includes a light-emitting device.
In a third aspect, an electronic device is provided that includes the stretchable circuit board of the first or second aspect.
According to the stretchable circuit board and the electronic equipment in the embodiment of the application, the electric connection among different electronic components is realized through the nano wires, and the accurate positioning connection of short distance among the components can be realized on the premise of higher stretchable performance due to the small size of the nano wires; the shape of the nanowire is controllable, so that the nanowire and the electronic component are conveniently positioned and connected; because the nanowire and the substrate layer are arranged at intervals, the nanowire is separated from the constraint of the substrate layer, the stretchable capability of the nanowire can be more effectively exerted, and the adverse effect of the substrate layer on the nanowire in the stretching process is reduced.
Drawings
FIG. 1 is a schematic diagram of a structure including conductive lines in the related art;
FIG. 2 is a schematic diagram of a structure including a metal wire in the related art;
fig. 3 is a schematic perspective view illustrating a stretchable circuit board according to an embodiment of the present disclosure;
FIG. 4 is an enlarged schematic perspective view of a portion of the area of FIG. 3;
FIG. 5 is a top view of the stretchable circuit board of FIG. 3;
FIG. 6 is a schematic cross-sectional view of a portion of the area of FIG. 5;
FIG. 7 is a schematic view of the stretchable circuit board of FIG. 3 in a bent state;
FIG. 8 is a schematic structural diagram of a growth substrate in a nanowire fabrication process according to an embodiment of the present application;
fig. 9 is a schematic structural diagram of a growth substrate and a catalyst metal layer in a nanowire manufacturing process according to an embodiment of the present application;
fig. 10 is a structural intent of a growth substrate and metal catalyst droplet particles in a nanowire fabrication process of an embodiment of the present application;
FIG. 11 is a schematic diagram of a growth substrate and a nanowire structure in a nanowire fabrication process according to an embodiment of the present application;
FIG. 12 is a schematic diagram of a growth substrate and nanowires and alloyed metal layer in a nanowire fabrication process according to an embodiment of the present application;
FIG. 13 is a schematic structural diagram of a growth substrate and alloyed nanowires in a nanowire fabrication process according to an embodiment of the present application;
FIG. 14 is a schematic structural diagram of a nanowire according to an embodiment of the present application;
FIG. 15 is a schematic current-voltage curve of a nanowire according to an embodiment of the present application;
fig. 16 is a schematic structural diagram of a substrate layer to be etched on which nanowires are disposed in the stretchable circuit board manufacturing process according to the embodiment of the present application;
fig. 17 is a schematic structural diagram of a substrate layer to be etched on which nanowires and electronic components are disposed in the stretchable circuit board manufacturing process according to the embodiment of the present application;
FIG. 18 is a partial region of FIG. 5 another cross-sectional structure is shown schematically.
Detailed Description
The terminology used in the description of the embodiments section of the present application is for the purpose of describing particular embodiments of the present application only and is not intended to be limiting of the present application.
Prior to the description of the embodiments of the present application, a description will be given of a related art stretchable electronic device.
As shown in fig. 1, in a related art, a conformal conductive line 01 is processed on a release layer by processing the conformal release layer on a relief surface on a substrate, and the conductive line 01 has a shape corresponding to the relief surface, thereby reducing the space occupation of the stretchable conductive line 01 on a planar area, however, since the conductive line 01 is prepared by a coating or vapor deposition method and the preparation method depends on the shape of the relief surface, the size of the conductive line 01 is large, and accurate positioning connection with a device cannot be realized over a short distance.
As shown in fig. 2, in another related art, a stretchable Cr/Au electrode is formed on a surface of a flexible substrate by laser etching, and a metal wire 02 is formed to realize flexible stretching, wherein a curvature radius of the metal wire 02 is 425 micrometers, a wire diameter is 50 micrometers, and since the metal wire 02 is obtained by a laser etching process, subject to laser etching precision, the obtained wire diameter and arc length are large, and a positioning connection can be realized only based on a large-sized device and a large device distance, that is, an accurate positioning connection with the device cannot be realized over a short distance.
In order to solve the above problems, the present application provides the following embodiments, which are described below.
As shown in fig. 3 to 6, an embodiment of the present application provides a first stretchable circuit board, including: a substrate layer 1; a plurality of electronic components 2, i.e. any two electronic components 2, which are located on one side surface of the substrate layer 1 and are arranged at a distance from each other, are spaced from each other in the direction of the plane of the first stretchable circuit board, the electronic components 2 being in particular assemblies formed by stacking components, due to the mutual spacing between the different electronic assemblies 2, i.e. the electronic assemblies 2 are component islands on the first stretchable circuit board, each electronic assembly 2 comprises a support portion 21 and an electronic component 22 located on the side of the support portion 21 away from the substrate layer 1, the electronic component 22 is a component for implementing an electrical function; the electronic components 22 of two different electronic assemblies 2 arranged at intervals are electrically connected through the nanowires 3, and the nanowires 3 and the substrate layer 1 are arranged at intervals.
It should be noted that, in the structure shown in fig. 3 and fig. 5, in the array formed by the electronic components 2, in the row direction or the column direction, the electronic components 22 of any two adjacent electronic components 2 are electrically connected to each other through the nanowires 3, but how to electrically connect the electronic components 2 through the nanowires 3 is not limited in the embodiment of the present application, for example, in other possible embodiments, only the electronic components 22 in any two adjacent electronic components 2 in each row of the electronic components 2 are electrically connected through the nanowires 3, and the electronic components 22 in each column of the electronic components 2 are not directly electrically connected through the nanowires 3, that is, in the embodiment of the present application, as long as the nanowires 3 are provided in the first stretchable circuit board and the nanowires 3 are used for electrically connecting the electronic components 22 in two different stretchable electronic components 2, the number of the nanowires 3 and the specific connection mode are not limited. In the embodiment of the present application, the electronic component 22 is a component or an electronic element for implementing some functions, for example, the electronic component 22 may be a combination of one or more of a transistor, a circuit, and a light emitting device, different electronic components 22 are spaced apart from each other, and different electronic components 22 are electrically connected to each other through the nanowires 3, so that, as shown in fig. 7, stretching of the first stretchable circuit board may be implemented, for example, stretching of the first stretchable circuit board may be implemented by bending the substrate layer 1.
The embodiments of the present application are further described below with reference to a manufacturing process of a first stretchable circuit board, and a manufacturing process of nanowires is first described.
As shown in fig. 8 to 13, the process of manufacturing the nanowire includes:
s11, preparing a nanowire guiding groove 102 on a growth substrate 101 through photoetching and etching processes;
for example, a layer of 150nm SiO is deposited on the surface of a flexible Polyimide (PI) substrate 1011 2 The buffer layer 1012, i.e. the growth substrate 101 is formed, then a layer of photoresist is spin-coated on the surface of the buffer layer 1012, the photoresist is exposed and developed to obtain a photoresist pattern, and then the SiO of the buffer layer 1012 is etched by plasma etching process 2 The material is etched to a depth of about 120nm to form a step, resulting in the nanowire guiding trench 102 shown in fig. 8.
Step S12, preparing a catalyst metal layer 103 at one end of the nanowire guiding groove 102;
a strip-shaped layer 103 of catalyst metal of indium material is deposited, for example, by photolithography and thermal evaporation processes, to a thickness of 30nm, at one end of the nanowire guiding trench 102, resulting in the structure shown in fig. 9.
Step S13, annealing the catalyst metal layer 103 in a reducing atmosphere to form metal catalyst droplet particles 104, and placing the growth substrate 101 in a Plasma Enhanced Chemical Vapor Deposition (PECVD) device to deposit an amorphous precursor film on the surface;
for example, an annealing process at 230 ℃ is performed in a vacuum atmosphere and the catalyst metal layer 103 is treated with hydrogen plasma for about 5 minutes to obtain indium metal particles, i.e., metal catalyst droplet particles 104, and then SiH is applied 4 As a silicon source gas, a layer of amorphous silicon thin film with a thickness of 20nm was deposited as a silicon precursor by PECVD process to obtain the structure shown in fig. 10.
S14, heating and growing a planar nanowire in an in-plane-solid-liquid-solid nanowire growth mode;
for example, heating to 350 ℃ anneals the nanowires along the nanowire guiding trenches 102, resulting in the structure shown in fig. 11.
Step S15, processing the oxide layer on the surface of the nanowire 3 by hydrofluoric acid, and depositing an alloyed metal layer 105 on the surface of the growth substrate 101 including the nanowire 3 by a sputtering or evaporation process, for example, depositing a metal nickel layer with a thickness of 200nm by a magnetron sputtering process as the alloyed metal layer 105, thereby obtaining the structure shown in fig. 12;
step S16, heating the growth substrate 101 deposited with the alloyed metal layer 105 in a rapid thermal annealing furnace to form a conductive alloy compound, removing the unalloyed metal by an etchant to obtain the alloyed nanowire 3 shown in fig. 13, for example, performing vacuum annealing at 350 ℃ for 5 minutes, and removing the unalloyed nickel by a nickel etchant to obtain the alloyed highly conductive nanowire 3.
Through the process, the preparation of the stretchable conductive nanowire 3 array can be realized, the nanowire 3 can grow along the shape of the preset groove, and no stress exists in the nanowire 3. Fig. 14 is a schematic diagram of a nanowire in an embodiment of the present application, it can be seen that a nanowire guiding groove 102 having a corresponding profile may be preset as needed to control the profile of the nanowire, for example, a serpentine-shaped nanowire may have a better stretchable performance, and fig. 15 is a schematic diagram of a current-voltage curve of a nanowire in an embodiment of the present application, it can be seen that the nanowire has a good conductivity. In the manufacturing process of the nanowire in the embodiment of the application, the corresponding nanowire guiding groove 102 can be arranged through a photoetching process, so that the positioning growth control of the nanowire is realized, and a foundation is provided for the positioning connection and integration between the subsequent nanowire and an electronic component; due to the fact that the size of the nanowire is small, the nanowire with the diameter of hundreds of nanometers can still keep high tensile performance when the nanowire can achieve connection of electronic components in a short distance.
After the nanowires are prepared through the above process, the first stretchable circuit board may be prepared through the following process.
Step S21, as shown in fig. 16, fixing two ends of each nanowire 3 on the substrate layer 1 to be etched, and exposing a region in the middle of the nanowire 3, where the substrate layer 1 to be etched may be the growth substrate 101 itself in the process of manufacturing the nanowire 3, or may be an individual film layer, and transferring the nanowire 3 manufactured by the above process from the growth substrate 101 to the substrate layer 1 to be etched, and then fixing the nanowire 3;
step S22, as shown in FIG. 17, transferring the electronic component 22 to the connecting position of the nanowire 3 on the substrate layer 1 to be etched, and realizing stable electric connection between the electronic component 22 and the nanowire 3 through conductive silver paste;
step S23, etching the substrate layer 1 to be etched by using the nanowire 3 and the electronic component 22 as masks to obtain an etched substrate layer 1 structure as shown in fig. 3, so that the nanowire 3 is suspended, and an unetched portion below the electronic component 22 is used as the supporting portion 21, therefore, in the first stretchable circuit board obtained by the preparation process, the nanowire 3 and the substrate layer 1 are arranged at intervals.
The process of transferring the nanowires 3 from the growth substrate 101 to the substrate layer 1 to be etched is explained below.
The transfer process of the nanowire 3 comprises the following steps:
after the step S16, step S31 is performed to spin-coat a polymethyl methacrylate (PMMA) organic thin film on the surface of the buffer layer 1012 with the nanowires 3, where the electronic components are reserved, and the thin film is baked at 150 ℃ for 5 minutes to increase the supporting performance of the thin film.
Step S32, the obtained buffer layer 1012 comprising PMMA and the nano-wires 3 is soaked in hydrofluoric acid solution with the content of 4%, and SiO below the PMMA is etched 2 The buffer layer 1012, the PMMA organic thin film with the nano wires 3 is released into the solution.
Step S33, transferring the PMMA organic thin film with the nanowires 3 to the surface of the substrate layer 1 to be etched, and dropping acetone to remove the PMMA organic thin film, so that the nanowires 3 remain on the surface of the substrate layer 1 to be etched, that is, the structure shown in fig. 16 is obtained, and then the step S21 may be performed.
It should be noted that, in the process of fabricating the nanowire, the growth substrate 101 may be composed of the PI substrate 1011 and SiO substrate in addition to the above-mentioned process 2 In addition to the buffer layer 1012, various types of hard substrates such as glass, silicon wafers, etc., and flexible substrates such as polyethylene terephthalate, polydimethylsiloxane films, etc., may be included(ii) a The amorphous precursor film in the process can be amorphous germanium, amorphous silicon germanium and the like besides a silicon precursor, and the correspondingly grown nanowires are germanium nanowires and silicon germanium nanowires; in the alloying process, the catalyst metal layer 103 may be a single metal such as gallium, tin, or bismuth, or an alloy of two or more metals, in addition to indium; in the alloying process, the alloying metal layer 105 can be aluminum, titanium and the like besides nickel, and the grown nanowire is the alloying nanowire of the corresponding metal; the heating mode in the process can be environmental heating, microwave heating or laser heating. In the above embodiment where the substrate layer 1 to be etched is the growth substrate 101 itself, the growth substrate 101 may be flexible glass, polyethylene terephthalate, polydimethylsiloxane (PDMS), or the like.
The stretchable circuit board in the embodiment of the application realizes the electric connection among different electronic components through the nanowires, and the nanowires are small in size, so that the accurate positioning connection of shorter distances among components can be realized on the premise of higher stretchable performance; the shape of the nanowire is controllable, so that the nanowire and the electronic component are conveniently positioned and connected; because the nanowire and the substrate layer are arranged at intervals, the nanowire is separated from the constraint of the substrate layer, the stretchable capability of the nanowire can be more effectively exerted, and the adverse effect of the substrate layer on the nanowire in the stretching process is reduced.
In some embodiments, a distance h1 between the nanowire 3 and the substrate layer 1 is greater than or equal to a thickness h2 of the support portion 21, the thickness h2 of the support portion 21 refers to a dimension of the support portion 21 in a direction perpendicular to a plane of the substrate layer 1, before the step S23, the nanowire 3 is located on the substrate layer 1 to be etched, in the step S23, the substrate layer 1 is etched, that is, a material of the substrate layer 1 below the nanowire 3 is etched, after etching, the nanowire 3 is suspended in the etched substrate layer 1, and a distance h1 between the nanowire 3 and the substrate layer 1 is greater than or equal to the thickness h2 of the support portion 21.
In some embodiments, the nanowires 3 have a bent structure to improve the stretchability.
In some embodiments, the nanowires 3 are suspended, that is, no other filler is disposed between the nanowires 3 and the substrate layer 1, so as to reduce adverse effects of the substrate layer 1 on the nanowires 3 during the stretching process to the maximum extent.
In other embodiments, as shown in fig. 18, the first stretchable circuit board further comprises: and the filling material 4 is filled among the electronic components 2, the filling material 4 coats the nanowires 3, and the elastic modulus of the filling material 4 is smaller than that of the substrate layer 1. The nanowire 3 can be protected by the filling material 4 with a small elastic modulus, and meanwhile, the material with the low elastic modulus can deform along with the deformation of the nanowire 3, so that the adverse effect of the substrate layer 1 on the nanowire 3 in the stretching process is reduced.
In some embodiments, the nanowires 3 are alloyed nanowires to improve the electrical conductivity properties of the nanowires 3.
In some embodiments, the alloyed nanowire is an alloyed nanowire composed of a nanowire body and an alloyed metal; the nanowire body is a silicon nanowire, a germanium nanowire or a silicon-germanium nanowire; the alloying metal is nickel, aluminum or titanium.
In some embodiments, the material of the support portion 21 and/or the substrate layer 1 is polydimethylsiloxane PDMS, which has better flexibility and is suitable as a substrate of the first stretchable circuit board.
In some embodiments, the support portion 21 is a unitary structure with the substrate layer 1, and the support portion 21 is a protrusion on the substrate layer 1.
In some embodiments, the electronic components 22 include transistors, for example, each electronic component 22 includes a corresponding transistor, and different transistors may be electrically connected through the nanowire 3, so that a plurality of electronic components 22 can form a circuit. For example, the transistor may be a top gate transistor, and the transistor includes a gate, a source, a drain, and a semiconductor layer, wherein the source and the drain are made of Ti and/or Au metal, a dielectric layer between the gate and the semiconductor layer may be alumina with a thickness of 30nm, the gate may be aluminum, the gate is used for controlling the transistor, the semiconductor layer is used as a channel of the transistor, and the top gate transistor, i.e., the semiconductor layer, is located between the gate and the support portion 21. The number of transistors included in the electronic component 22 is not limited, and each electronic component 22 may include one or more transistors. Because the manufacturing process of the transistor and the manufacturing process of the nanowire 3 can be completed on different substrates, and the transistor can also be fixed on the substrate layer 1 through transfer, the process of the transistor does not limit the process of the substrate layer 1. The plurality of electronic components 22 in the first stretchable Circuit board may constitute a Complementary Metal Oxide Semiconductor (CMOS) array or an Integrated Circuit (IC) or the like. Depending on the electronic components 22 and the connection mode of the nanowires 3, the array formed by the plurality of electronic components 22 may perform different functions, for example, as a storage and arithmetic unit, and may also be used as a driving circuit of the light emitting device.
In some embodiments, the electronic components 22 also include light emitting devices. The light emitting device may be, for example, an electroluminescent diode, an organic electroluminescent diode, a quantum dot electroluminescent diode, a perovskite electroluminescent diode, or the like, and the light emitting device and the corresponding drive circuit may constitute the electronic component 22 by lamination.
In some embodiments, the electronic components 22 further include light-sensing devices, for example, the electronic components 22 include light-sensing devices and corresponding driving circuits, and the array of the plurality of electronic components 22 may be an array of stretchable optical detection devices.
The stretchable circuit boards in the above embodiments are all first stretchable circuit boards, and in other embodiments, as shown in fig. 3 to 7, embodiments of the present application provide a second stretchable circuit board, including: a substrate layer 1; the first electronic assembly 201 and the second electronic assembly 202 are positioned on one side surface of the substrate layer 1 and are arranged at intervals, and any one of the first electronic assembly 201 and the second electronic assembly 202 comprises a supporting part 21 and an electronic component 22 positioned on one side of the supporting part 21 far away from the substrate layer 1; the electronic component 22 of the first electronic assembly 201 and the electronic component 22 of the second electronic assembly 202 are electrically connected through the first nanowire 31, and the first nanowire 31 and the substrate layer 1 are arranged at intervals.
It should be noted that, in the embodiment of the first stretchable circuit board, the specific structure of each electronic component 2 and each nanowire 3 is related, in the embodiment of the second stretchable circuit board, only the specific structures of the first electronic component 201 and the second electronic component 202 are related, and only the specific structure of the first nanowire 31 connected between the electronic component 22 of the first electronic component 201 and the electronic component 22 of the second electronic component 202 is related, the specific structure and the preparation process of any one of the first electronic component 201 and the second electronic component 202 may be the same as those of the electronic component 2 in the first stretchable circuit board, the specific structure and the preparation process of the first nanowire 31 may be the same as those of the nanowire 3, and the specific preparation process of the second stretchable circuit board may also be the same as those of the first stretchable circuit board, which is not described herein again. In the present embodiment of the second stretchable circuit board, the structures of the electronic components other than the first electronic component 201 and the second electronic component 202 in the figure are not limited, and the structures of the nanowires 3 other than the first nanowire 31 in the figure are not limited.
The stretchable circuit board in the embodiment of the application realizes the electric connection among different electronic components through the nanowires, and the nanowires are small in size, so that the accurate positioning connection of short distances among components can be realized on the premise of higher stretchable performance; the shape of the nanowire is controllable, so that the nanowire and the electronic component are conveniently positioned and connected; because the nanowire and the substrate layer are arranged at intervals, the nanowire is separated from the constraint of the substrate layer, the stretchable capability of the nanowire can be more effectively exerted, and the adverse effect of the substrate layer on the nanowire in the stretching process is reduced.
In some embodiments of the second stretchable circuit board, the distance h1 between the first nanowires 31 and the substrate layer 1 is greater than or equal to the thickness h2 of the support portion 21.
In some embodiments of the second stretchable circuit board, the first nanowires 31 have a bent structure.
In some embodiments of the second stretchable circuit board, the first nanowires 31 are arranged in suspension.
In some embodiments of the second stretchable circuit board, the second stretchable circuit board further comprises: and the filling material 4 is filled between the first electronic component 201 and the second electronic component 202, the filling material 4 coats the first nanowires 31, and the elastic modulus of the filling material 4 is smaller than that of the substrate layer 1.
In some embodiments of the second stretchable circuit board, the first nanowires 31 are alloyed first nanowires.
In some embodiments of the second stretchable circuit board, the alloyed first nanowire is an alloyed first nanowire composed of a first nanowire body and an alloyed metal; the first nanowire body is a silicon first nanowire, a germanium first nanowire or a silicon-germanium first nanowire; the alloying metal is nickel, aluminum or titanium.
In some embodiments of the second stretchable circuit board, the material of the support 21 and/or the substrate layer 1 is polydimethylsiloxane PDMS.
In some embodiments of the second stretchable circuit board, the support portions 21 are integral structures with the substrate layer 1, and the support portions 21 are protrusions on the substrate layer 1.
In some embodiments of the second stretchable circuit board, the electronic components 22 comprise transistors.
In some embodiments of the second stretchable circuit board, the electronic components 22 further comprise light emitting devices.
The embodiment of the present application further provides an electronic product, including the stretchable circuit board in any of the above embodiments, which may be a first stretchable circuit board or a second stretchable circuit board, and the specific structure and principle of the stretchable circuit board are the same as those of the above embodiments, and are not described herein again. The electronic product can be various types of terminals, large-screen devices or IOT devices.
In the embodiments of the present application, "at least one" means one or more, and "a plurality" means two or more. "and/or" describes the association relationship of the associated objects, and means that there may be three relationships, for example, a and/or B, and may mean that a exists alone, a and B exist simultaneously, and B exists alone. Wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship. "at least one of the following" and the like, refer to any combination of these items, including any combination of singular or plural items. For example, at least one of a, b, and c may represent: a, b, c, a-b, a-c, b-c, or a-b-c, wherein a, b, c may be single or multiple.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made to the present application by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (23)
1. A stretchable circuit board, comprising:
a substrate layer;
the electronic components are positioned on the surface of one side of the substrate layer and are arranged at intervals, and each electronic component comprises a supporting part and an electronic component positioned on one side of the supporting part far away from the substrate layer;
the electronic components of two different electronic assemblies which are arranged at intervals are electrically connected through a nanowire, and the nanowire and the substrate layer are arranged at intervals.
2. The stretchable circuit board of claim 1,
the distance between the nanowire and the substrate layer is greater than or equal to the thickness of the supporting part.
3. The stretchable circuit board of claim 1,
the nanowire has a bent structure.
4. A stretchable circuit board according to any one of claims 1 to 3,
the nanowires are suspended.
5. The stretchable circuit board according to any one of claims 1 to 3, further comprising:
and the filling material is filled among the electronic components, coats the nanowires and has an elastic modulus smaller than that of the substrate layer.
6. A stretchable circuit board according to any one of claims 1 to 3,
the nanowires are alloyed nanowires.
7. The stretchable circuit board of claim 6,
the alloyed nanowire is composed of a nanowire body and alloyed metal;
the nanowire body is a silicon nanowire, a germanium nanowire or a silicon-germanium nanowire;
the alloying metal is nickel, aluminum or titanium.
8. A stretchable circuit board according to any one of claims 1, 2, 3 and 7,
the material of the supporting part and/or the substrate layer is polydimethylsiloxane PDMS.
9. A stretchable circuit board according to any one of claims 1, 2, 3 and 7,
the supporting part and the substrate layer are of an integral structure, and the supporting part is a bulge on the substrate layer.
10. The stretchable circuit board according to any one of claims 1, 2, 3 and 7,
the electronic component includes a transistor.
11. The stretchable circuit board of claim 10,
the electronic component further includes a light emitting device.
12. A stretchable circuit board, comprising:
a substrate layer;
the electronic device comprises a substrate layer, a first electronic assembly and a second electronic assembly, wherein the substrate layer is arranged on the surface of one side of the substrate layer, the first electronic assembly and the second electronic assembly are arranged at intervals, and any one of the first electronic assembly and the second electronic assembly comprises a supporting part and an electronic component which is arranged on one side of the supporting part far away from the substrate layer;
the electronic components of the first electronic assembly and the electronic components of the second electronic assembly are electrically connected through a first nanowire, and the first nanowire and the substrate layer are arranged at intervals.
13. The stretchable circuit board of claim 12,
the distance between the first nanowire and the substrate layer is larger than or equal to the thickness of the supporting part.
14. The stretchable circuit board of claim 12,
the first nanowire has a bent structure.
15. The stretchable circuit board of any one of claims 12 to 14,
the first nanowire is arranged in a suspension mode.
16. The stretchable circuit board of any one of claims 12 to 14, further comprising:
and the filling material is filled between the first electronic component and the second electronic component, coats the first nanowire and has an elastic modulus smaller than that of the substrate layer.
17. The stretchable circuit board of any one of claims 12 to 14,
the first nanowire is an alloyed first nanowire.
18. The stretchable circuit board of claim 17,
the alloyed first nanowire is an alloyed first nanowire consisting of a first nanowire body and an alloyed metal;
the first nanowire body is a silicon first nanowire, a germanium first nanowire or a silicon-germanium first nanowire;
the alloying metal is nickel, aluminum or titanium.
19. The stretchable circuit board according to any one of claims 12, 13, 14 and 18,
the material of the supporting part and/or the substrate layer is Polydimethylsiloxane (PDMS).
20. The stretchable circuit board according to any one of claims 12, 13, 14 and 18,
the supporting part and the substrate layer are of an integral structure, and the supporting part is a bulge on the substrate layer.
21. The stretchable circuit board according to any one of claims 12, 13, 14 and 18,
the electronic component includes a transistor.
22. The stretchable circuit board of claim 21,
the electronic component further includes a light emitting device.
23. An electronic device characterized by comprising a stretchable circuit board according to any one of claims 1 to 22.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122987430.5U CN217546391U (en) | 2021-12-01 | 2021-12-01 | Stretchable circuit board and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122987430.5U CN217546391U (en) | 2021-12-01 | 2021-12-01 | Stretchable circuit board and electronic device |
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| CN217546391U true CN217546391U (en) | 2022-10-04 |
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