CN217499408U - Plasma corrosion resistant film structure - Google Patents

Plasma corrosion resistant film structure Download PDF

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CN217499408U
CN217499408U CN202220435547.4U CN202220435547U CN217499408U CN 217499408 U CN217499408 U CN 217499408U CN 202220435547 U CN202220435547 U CN 202220435547U CN 217499408 U CN217499408 U CN 217499408U
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layer
corrosion
corrosion resistant
corrosion layer
plasma
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吴宗丰
李文亮
林佳德
蔡宇砚
苏修贤
邱国扬
陈柏翰
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FEEDBACK TECHNOLOGY CORP
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/04—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material
    • C23C28/042—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings of inorganic non-metallic material including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides
    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
    • C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
    • C23C4/11—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
    • C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
    • C23C4/131—Wire arc spraying

Abstract

A thin film structure resistant to plasma etching comprises a substrate, a first anti-etching layer, a second anti-etching layer and a third anti-etching layer. The first anti-corrosion layer is arranged on the base material and is in contact with the base material. The second anti-corrosion layer is arranged on the first anti-corrosion layer. A third corrosion resistant layer is disposed on the second corrosion resistant layer. Wherein the first and third anti-corrosion layers are formed by vapor deposition. Wherein the second anti-corrosion layer is formed by plasma spraying. The utility model has the advantages that the compact, loose and compact multi-layer corrosion resistant layer is utilized to form the corrosion resistant structure, the formation can be realized with less time and cost, and the corrosion resistant characteristic equivalent to that of the known fully compact corrosion resistant layer is maintained.

Description

Plasma corrosion resistant film structure
Technical Field
A film structure, in particular to a film structure resisting electric slurry corrosion.
Background
In the semiconductor industry, plasma is widely applied to various semiconductor processing equipment, however, with the progress of processing capability, the surface treatment requirement of cavity parts is more and more strict, most of the equipment cavities are aluminum cavities at present, but aluminum has poor plasma erosion resistance, so the surface microstructure treatment is mostly performed on the parts of the equipment in contact with the plasma in the industry, so that the equipment has the characteristic of plasma erosion resistance.
The current common surface microstructure treatment is plasma spraying, which uses Yttrium oxide (Y2O3) or Yttrium Aluminum Garnet (YAG) to perform surface treatment, and the electrical resistance to plasma corrosion is better than that of aluminum. However, the surface of the spraying material has porous characteristics, which is not favorable for semiconductor process. Although Plasma-enhanced chemical vapor deposition (PECVD), Atomic Layer Deposition (ALD), or Physical Vapor Deposition (PVD) can produce a non-porous film, the deposition rate is slow and the cost is high, and more time and cost are required to reach the same thickness as Plasma spraying.
Therefore, it is worth the thinking of those skilled in the art to solve the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model provides an anti-plasma corrosion film structure, beneficial effect utilize fine and close, loose, fine and close multi-level anticorrosive layer to form anti-corrosion structure, can form with less time and cost to keep the anticorrosive characteristic equivalent with knowing the totally fine and close anticorrosive layer.
A thin film structure with resistance to plasma etching comprises a substrate, a first anti-etching layer, a second anti-etching layer and a third anti-etching layer. The first anti-corrosion layer is arranged on the substrate and is in contact with the substrate. The second anti-corrosion layer is disposed on the first anti-corrosion layer. The third anti-corrosion layer is arranged on the second anti-corrosion layer.
The structure of the anti-plasma corrosion thin film is characterized in that the thickness of the first anti-corrosion layer and the third anti-corrosion layer is 5-20 μm; the thickness of the second anti-corrosion layer is 100-250 μm.
The structure is characterized in that the thickness ratio of the second anti-corrosion layer to the first anti-corrosion layer is between 5 and 50; the thickness ratio of the second anti-corrosion layer to the third anti-corrosion layer is between 5 and 50.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below. It is to be noted that the components in the attached drawings are merely schematic and are not shown in actual scale.
Drawings
Fig. 1 shows the structure of the plasma corrosion resistant film of the present invention.
FIGS. 2 to 6 illustrate the manufacturing method of the plasma etching resistant film structure of the present invention.
Detailed Description
Referring to fig. 1, fig. 1 is a schematic diagram illustrating a plasma corrosion resistant film structure according to the present invention. The structure 100 of the present invention includes a substrate 101, a first anti-corrosion layer 110, a second anti-corrosion layer 120, and a third anti-corrosion layer 130. The first corrosion resistant layer 110 is disposed on the substrate 101, and the first corrosion resistant layer 110 is in contact with the substrate 101. A second corrosion resistant layer 120 is disposed on the first corrosion resistant layer 110 and a third corrosion resistant layer 130 is disposed on the second corrosion resistant layer 120. In other words, the second anti-corrosion layer 120 is sandwiched between the first anti-corrosion layer 110 and the third anti-corrosion layer 130, forming a multi-layered anti-corrosion structure. The substrate 101 is, for example, an inner surface layer of a cavity of a semiconductor device, and the inner surface layer may be made of aluminum.
In addition, the thicknesses of the first anti-corrosion layer 110 and the third anti-corrosion layer 130 are respectively 5 to 20 micrometers (μm), and the thicknesses of the first anti-corrosion layer 110 and the third anti-corrosion layer 130 may be the same or different; the second anti-corrosion layer has a thickness of 100 to 250 micrometers (μm). Therefore, the thicknesses of the first, second, and third corrosion resistant layers 110, 120, and 130 are not the same. More specifically, the thickness of the second anti-corrosion layer 120 is thicker than the thickness of the first anti-corrosion layer 110 and the third anti-corrosion layer 130. In one embodiment, the thickness ratio of the second anti-corrosion layer 120 to the first anti-corrosion layer 110 is between 5 and 50; the thickness ratio of the second anti-corrosion layer 120 to the third anti-corrosion layer 130 is between 5 and 50.
In this embodiment, the first corrosion resistant layer 110 and the third corrosion resistant layer 130 are relatively dense corrosion resistant layers, and the second corrosion resistant layer 120 is a relatively loose corrosion resistant layer. A dense-loose-dense multi-layer corrosion resistant structure is formed through the first corrosion resistant layer 110, the second corrosion resistant layer 120, and the third corrosion resistant layer 130, providing corrosion resistant characteristics to protect the substrate 101.
Next, referring to fig. 2 to 6, fig. 2 to 6 illustrate a method for fabricating a plasma etching resistant film structure according to the present invention. First, step S10 is performed to provide a substrate 101 (as shown in fig. 3). Next, step S20 is performed to form a first anti-corrosion layer 110 on the substrate 101 by vapor deposition (as shown in fig. 4). Specifically, the vapor deposition method used for the first anti-corrosion layer 110 is Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), or Physical Vapor Deposition (PVD), and the first anti-corrosion layer 110 with high density and no porosity can be formed. The dense, non-porous first anti-corrosion layer 110 effectively reduces the outgassing from the substrate 101 and prevents the plasma from corroding the substrate 101 to generate dust. And at the same time, the second anti-corrosion layer 120 can be used as a buffer material to increase the adhesion of the anti-plasma etching thin film structure 100.
In one embodiment, if Physical Vapor Deposition (PVD) is used to form the first anti-corrosion layer 110, Y is selected 2 O 3 YOF and YAG as the substrate, and forming the first anti-corrosion layer 110 by electron beam bombardment evaporation (E-gun) and ion beam assisted deposition. In the process of forming the first anti-corrosion layer 110, the parameters are controlled to be the cavity temperature of 25-200 ℃, the evaporation rate of 0.1-1.5 nm/s, the ion source plasma power auxiliary electron beam current of 100-1500 mA, the voltage of 100-1500V, the gas flow rate of argon of 10-50 sccm (standard cubic centimeter per minute flow rate), the oxygen of 10-100 sccm, and the process pressure of 2.0E-2-1.0E-6 Torr.
In another embodiment, if Atomic Layer Deposition (ALD) is used to form the first anti-corrosion layer 110, tris (cyclopentadienyl) yttrium (Y (Cp) is selected for use in the present invention 3 ) Tris (2,2,6, 6-tetramethyl-3, 5-heptanedionato) yttrium (Y (thd)) 3 ) With tris (ethylcyclopentadienyl) yttrium (Y) (EtCp) 3 ) As a precursor, in the presence of water (H) 2 O) and oxygen (O) 2 ) As a reaction gas, the first corrosion resistant layer 110 is formed via atomic layer deposition. In the process of forming the first anti-corrosion layer 110, the flow rate of the reaction gas is 10to 100sccm, the temperature of the cavity is 100 to 400 ℃, and the process pressure is 1 to 10 Torr.
Then, step S30 is performed to form a second anti-corrosion layer 120 on the first anti-corrosion layer 110 by plasma spraying (as shown in fig. 5). Specifically, yttrium oxide (Y) 2 O 3 ) Yttrium Oxyfluoride (YOF), or Yttrium Aluminum Garnet (YAG) as a spray material to form the second anti-corrosion layer 120. In addition, the spraying material can be preheated, and the preheating temperature is about 100-300 ℃. In the forming process, the set parameters are arc current 300-600A, carrier rotation speed 5-30 RPM, and carrier gas argon (Ar) and nitrogen (N) 2 ) The gas flow is 10-30L/min. The second anti-corrosion layer 120 is formed on the first anti-corrosion layer 110, so that the first anti-corrosion layer can be protected, and the overall corrosion resistance and durability of the plasma corrosion resistant thin film structure 100 can be improved.
Next, step S40 is performed to form a third anti-corrosion layer 130 (as shown in fig. 6) on the second anti-corrosion layer 120 by vapor deposition. Specifically, the vapor deposition method used for the third anti-corrosion layer 130 is Plasma Enhanced Chemical Vapor Deposition (PECVD), Atomic Layer Deposition (ALD), or Physical Vapor Deposition (PVD), and the third anti-corrosion layer 130 with high density and no porosity can be formed.
In one embodiment, if Physical Vapor Deposition (PVD) is used to form the third anti-corrosion layer 130, Y is selected 2 O 3 YOF and YAG as the substrate, and forming the third anti-corrosion layer 130 by electron beam bombardment evaporation (E-gun) and ion beam assisted deposition. In the process of forming the third anti-corrosion layer 130, the parameters are controlled to be the cavity temperature of 25-200 ℃, the evaporation rate of 0.1-1.5 nm/s, the ion source plasma power auxiliary electron beam current of 100-1500 mA, the voltage of 100-1500V, the gas flow rate of argon of 10-30 sccm, the oxygen of 10-100 sccm, and the process pressure of 2.0E-2-1.0E-6 Torr.
In another embodiment, if Atomic Layer Deposition (ALD) is used to form the third anti-corrosion layer 130, tris (cyclopentadienyl) yttrium (Y (Cp) is selected for use in the present invention 3 ) Yttrium tris (2,2,6, 6-tetramethyl-3, 5-heptanedionate) (Y (thd)) 3 ) With tris (ethylcyclopentadienyl) yttrium (Y) (EtCp) 3 ) As a precursor, in the presence of water (H) 2 O) and oxygen (O) 2 ) As a reaction gas, the third corrosion resistant layer 130 is formed via atomic layer deposition. In the process of forming the first anti-corrosion layer 110, the flow rate of the reaction gas is 10-100 sccm, the temperature of the cavity is 100-400 ℃, and the process pressure is 1-10 Torr.
The third corrosion resistant layer 130 and the first corrosion resistant layer 110 are formed by a vapor deposition method, but not limited to, the same vapor deposition method (PECBD, ALD, or PVD) as the first corrosion resistant layer 110. The third corrosion resistant layer 130 is thus a dense, non-porous corrosion resistant layer. The third anti-corrosion layer 130 can fill the voids in the second anti-corrosion layer 120, further improving the surface resistance of the thin film structure 100 against plasma etching. The plasma corrosion resistant film structure 100 is completed through steps S10-S40.
The utility model discloses a resistant thick liquid corrosion thin film structure 100 sees through the first anticorrosion layer 110, the second anticorrosion layer 120 and the third anticorrosion layer 130 that form with different methods, further forms with the anticorrosive structure of fine and close (first anticorrosion layer 110), loose (second anticorrosion layer 120), fine and close (third anticorrosion layer 130) constitution, and its corrosion resistance characteristic is close to equal thickness and the anticorrosive structure of full compactness. Thus, the compact, loose, compact corrosion resistant structure of the present invention may be formed in less time and cost than a fully compact corrosion resistant structure, and provides comparable corrosion resistance characteristics.
The above-described embodiments are merely exemplary for convenience of description, and various modifications may be made by those skilled in the art without departing from the scope of the invention as claimed in the claims.

Claims (3)

1. A plasma-erosion resistant thin-film structure, comprising:
a substrate;
the first anti-corrosion layer is arranged on the base material and is in contact with the base material;
a second anti-corrosion layer disposed on the first anti-corrosion layer; and
and a third anti-corrosion layer arranged on the second anti-corrosion layer.
2. The thin film structure of claim 1, wherein the first and third anti-corrosion layers have a thickness of 5-20 μm; the thickness of the second anti-corrosion layer is 100-250 μm.
3. The thin film structure of claim 1, wherein the thickness ratio of the second anti-corrosion layer to the first anti-corrosion layer is between 5 and 50; the thickness ratio of the second anti-corrosion layer to the third anti-corrosion layer is between 5 and 50.
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US20210403337A1 (en) * 2020-06-30 2021-12-30 Applied Materials, Inc. Yttrium oxide based coating and bulk compositions
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