CN217474373U

CN217474373U - Single-wafer cleaning equipment for realizing etching reaction of gradient structure

Info

Publication number: CN217474373U
Application number: CN202123428601.7U
Authority: CN
Inventors: 廖世保; 邓信甫; 杨嘉斌; 林忠宝
Original assignee: Zhiwei Semiconductor Shanghai Co Ltd
Current assignee: Zhiwei Semiconductor Shanghai Co Ltd
Priority date: 2021-12-31
Filing date: 2021-12-31
Publication date: 2022-09-23
Anticipated expiration: 2031-12-31

Abstract

The utility model discloses a single-wafer cleaning device for realizing etching reaction with a gradient structure, which relates to the technical field of cleaning devices and comprises a mounting plate, a spraying mechanism, a supporting mechanism and a waste liquid collecting mechanism, wherein the upper end of the mounting plate is provided with four spraying mechanisms, the waste liquid collecting mechanism is arranged between the four spraying mechanisms, and each spraying mechanism is provided with a supporting mechanism; each spraying mechanism comprises a support frame, a connecting rod and a spray head, the support frame is arranged at the upper end of the mounting plate, the connecting rod is arranged at one side of the support frame close to the waste liquid collecting mechanism, the spray head is rotatably arranged at the lower end of the connecting rod, and the spray heads are arranged in a step shape; each spray head comprises a first liquid outlet, a second liquid outlet and a third liquid outlet, the first liquid outlet is arranged on one side of the second liquid outlet, and the third liquid outlet is arranged on the other side of the second liquid outlet. Through the design of the trapezoidal degree and the omnibearing rotation, the sprayed solution and the crystal can react more comprehensively, and the side edge and the lower end of the crystal can also react with the solution.

Description

Single-wafer cleaning equipment for realizing etching reaction of gradient structure

Technical Field

The utility model relates to cleaning equipment's technical field especially involves a realize single wafer cleaning equipment of gradient structure's etching reaction.

Background

The solution sprayed by the existing single-wafer cleaning equipment can only react with the upper end of the crystal, and the rest positions of the crystal cannot react with the sprayed solution, so that the reaction of the crystal is incomplete, the upper end of the crystal reacts quickly, and some positions cannot be sprayed with the solution, so that the single-wafer cleaning equipment is very inconvenient to use.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a realize single wafer cleaning equipment of gradient structure's etching reaction for solve above-mentioned technical problem.

The utility model adopts the technical scheme as follows:

the single-wafer cleaning equipment for realizing the etching reaction of the gradient structure comprises a mounting plate, four spraying mechanisms, a supporting mechanism and a waste liquid collecting mechanism, wherein the four spraying mechanisms are arranged at the upper end of the mounting plate, the waste liquid collecting mechanism is arranged between the four spraying mechanisms, and each spraying mechanism is provided with one supporting mechanism;

each spraying mechanism comprises a support frame, a connecting rod and a spray head, the support frame is arranged at the upper end of the mounting plate, the connecting rod is arranged on one side, close to the waste liquid collecting mechanism, of the support frame, the spray head is rotatably arranged at the lower end of the connecting rod, and the spray heads are arranged in a step shape;

each shower nozzle all includes first liquid outlet, second liquid outlet and third liquid outlet, one side of second liquid outlet is equipped with first liquid outlet, the opposite side of second liquid outlet is equipped with the third liquid outlet.

Preferably, the support frame reaches the connecting rod is inside to be equipped with the connecting pipe, the connecting pipe with first liquid outlet, the second liquid outlet reaches the third liquid outlet intercommunication, the connecting pipe is used for providing solution.

As a further preference, the first liquid outlet, the second liquid outlet and the third liquid outlet are connected with the connecting rod through a rotating shaft, a mounting hole is formed in the lower end of the connecting rod, a spring is arranged in the mounting hole, and the spring is connected with the rotating shaft.

Preferably, a rotating motor is further arranged in the mounting hole, and a telescopic rod of the rotating motor penetrates through the spring to be connected with the rotating shaft.

Preferably, each supporting mechanism all includes flexible hydro-cylinder and fixed disk, the standing groove has been seted up on the support frame, the inner diapire of standing groove is equipped with one flexible hydro-cylinder, flexible hydro-cylinder part stretches out the standing groove, flexible hydro-cylinder is kept away from one side of support frame is equipped with one the fixed disk, the fixed disk with the telescopic link of flexible hydro-cylinder is connected.

Preferably, the waste liquid collecting mechanism comprises a collecting box, a supporting rod is arranged at the upper end of the mounting plate, the collecting box is arranged at the upper end of the supporting rod, and a cleaning cavity is formed in the collecting box.

Preferably, the bottom of the collecting box is provided with a through hole, and the through hole is communicated with the cleaning cavity.

Preferably, the lower end of the collecting box is provided with a drainage tube, and the drainage tube is communicated with the through hole.

The technical scheme has the following advantages or beneficial effects:

the single wafer cleaning equipment for realizing the etching reaction of the gradient structure has the advantages that the design of the gradient degree and the all-around rotation is adopted, so that the sprayed solution and the crystal can react more comprehensively, and the side edge and the lower end of the crystal can also react with the solution.

Drawings

FIG. 1 is a schematic diagram of a first configuration of a single wafer cleaning apparatus for performing a gradient structured etching reaction according to the present invention;

FIG. 2 is a second schematic diagram of the single wafer cleaning apparatus of the present invention for performing a gradient etching reaction;

FIG. 3 is a schematic view of a cleaning chamber and a showerhead in another embodiment.

In the figure: 1. mounting a plate; 2. a spraying mechanism; 21. a support frame; 22. a connecting rod; 23. a spray head; 231. A first liquid outlet; 232. a second liquid outlet; 233. a third liquid outlet; 24. a rotating shaft; 3. a support mechanism; 31. a telescopic oil cylinder; 32. fixing the disc; 4. a waste liquid collection mechanism; 41. a collection box; 42. a support bar; 43. a drainage tube; 5. wafer bearing platform

Detailed Description

The technical solutions of the present invention will be described more clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the description of the present invention, it should be noted that, as the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. appear, the indicated orientation or positional relationship thereof is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, but does not indicate or imply that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" as appearing herein are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" should be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Fig. 1 is a first structural schematic diagram of a single wafer cleaning apparatus for realizing an etching reaction of a gradient structure of the present invention, fig. 2 is a second structural schematic diagram of a single wafer cleaning apparatus for realizing an etching reaction of a gradient structure of the present invention, fig. 3 is a structural schematic diagram of a cleaning cavity and a nozzle in another embodiment, please refer to fig. 1 to 3, which illustrate a preferred embodiment, an illustrated single wafer cleaning apparatus for realizing an etching reaction of a gradient structure, comprising: mounting panel 1, spray mechanism 2, supporting mechanism 3 and waste liquid and collect mechanism 4, the upper end of mounting panel 1 is provided with four and sprays mechanism 2, four spray and be provided with waste liquid between the mechanism 2 and collect mechanism 4, four spray mechanism 2 and arrange the setting along the outer fringe that waste liquid was collected mechanism 4, spray mechanism 2 and be used for spraying the solution that reacts with the crystal, waste liquid is collected mechanism 4 and is used for collecting the solution waste liquid after reacting with the crystal. Each spraying mechanism 2 is provided with a supporting mechanism 3; the support mechanism 3 is used for clamping the crystal.

Further, as a preferred embodiment, each spraying mechanism 2 comprises a support frame 21, a connecting rod 22 and a spray head 23, the support frame 21 is arranged at the upper end of the mounting plate 1, the connecting rod 22 is arranged at one side of the support frame 21 close to the waste liquid collecting mechanism 4, the spray head 23 is rotatably arranged at the lower end of the connecting rod 22, and the spray head 23 is arranged in a step shape; each spray head 23 comprises a first liquid outlet 231, a second liquid outlet 232 and a third liquid outlet 233, wherein the first liquid outlet 231 is arranged on one side of the second liquid outlet 232, and the third liquid outlet 233 is arranged on the other side of the second liquid outlet 232. The depth of the first outlet 231 is greater than that of the second outlet 232, and the depth of the second outlet 232 is greater than that of the third outlet 233. The support frame 21 and the connecting rod 22 are provided with connecting pipes inside, the connecting pipes are communicated with the first liquid outlet 231, the second liquid outlet 232 and the third liquid outlet 233, and the connecting pipes are used for providing solution. First liquid outlet 231, second liquid outlet 232 and third liquid outlet 233 are connected with connecting rod 22 through pivot 24, and the mounting hole has been seted up to the lower extreme of connecting rod 22, is provided with the spring in the mounting hole, and the spring is connected with pivot 24. A rotating motor is further arranged in the mounting hole, and a telescopic rod of the rotating motor penetrates through a spring to be connected with the rotating shaft 24. Outside solution is connected to the connecting pipe, absorbs solution and sprays out from first liquid outlet 231, second liquid outlet 232 and third liquid outlet 233 again, after spraying the end to the upper end of crystal, starts the rotation motor, rotates the motor and drives pivot 24 and rotate to make the spring take place deformation, thereby also drive first liquid outlet 231, second liquid outlet 232 and the skew that third liquid outlet 233 took place the angle, spray to the full aspect of crystal.

Further, as a preferred embodiment, each supporting mechanism 3 includes a telescopic cylinder 31 and a fixed plate 32, a placing groove is opened on the supporting frame 21, a telescopic cylinder 31 is disposed on an inner bottom wall of the placing groove, the telescopic cylinder 31 partially extends out of the placing groove, a fixed plate 32 is disposed on a side of the telescopic cylinder 31 away from the supporting frame 21, and the fixed plate 32 is connected with a telescopic rod of the telescopic cylinder 31. When the crystal needs to be clamped, the telescopic rod of the telescopic oil cylinder 31 extends to drive the fixed disc 32 to fix the crystal, and when the crystal needs to be taken down, the telescopic rod retracts to drive the fixed disc 32 to retract, so that the crystal is taken down.

Further, as a preferred embodiment, the waste liquid collecting mechanism 4 includes a collecting box 41, a supporting rod 42 is disposed at the upper end of the mounting plate 1, the collecting box 41 is disposed at the upper end of the supporting rod 42, and a cleaning cavity is disposed on the collecting box 41. The bottom of the collection box 41 is provided with a through hole which is communicated with the cleaning cavity. The lower end of the collecting box 41 is provided with a drainage tube 43, and the drainage tube 43 is communicated with the through hole. After the waste liquid enters the cleaning cavity, the waste liquid flows towards the through hole and finally flows out of the drainage tube 43. The mounting plate 1 is provided with a connecting hole for connecting the drainage tube 43. In this embodiment, as shown in fig. 1, when the supporting mechanism 3 holds the crystal, the crystal is located right above the cleaning cavity, wherein the diameter of the cleaning cavity is much larger than that of the crystal. And waste liquid generated after the crystal is cleaned can enter the cleaning cavity for recycling.

In other preferred embodiments, the etching module comprises a nozzle and a liquid inlet pipe, wherein the nozzle is connected with the liquid inlet pipe, and the liquid inlet pipe is used for supplying acid etching liquid to the nozzle for etching the surface of the crystal. The etching module can be used for etching a crystal with a flat surface or a crystal with a step structure on the outer edge of the surface. When the nozzle is applied to etching of the crystal with the trapezoid structure, the nozzle is arranged at the edge of the crystal and the cleaning cavity, the nozzle can swing slightly between the cleaning cavity and the edge of the crystal, and the nozzle can be mutually adjusted to spray only at the outer edge of the crystal by matching with the rotation of the crystal. Secondly, the nozzle can be arranged in an inclined mode, the specific inclined angle can be selected according to requirements, for example, the included angle between the axis of the nozzle and the normal line of the center of the crystal is 60-80 degrees, and the acid etching liquid can be accurately sprayed onto the step surface of the step structure on the crystal.

In another embodiment, the spraying mechanism 2 does not have the supporting mechanism 3, a wafer bearing platform is arranged in a cleaning cavity in the collecting box 41 and used for supporting the crystal and driving the crystal to rotate, wherein the cleaning cavity has an upper layer cavity, a middle layer cavity and a lower layer cavity, a lifting mechanism is arranged at the bottom of the wafer bearing platform and used for driving the wafer bearing platform to lift in the cleaning cavity, when different solutions are adopted for cleaning the crystal, the wafer bearing platform can be driven to drive the crystal to move up and down, the crystal corresponds to different layer cavities, and the rotation of the crystal is matched, so that the solution enters the layer cavities, and the classification and collection of different solutions are realized.

The above description is only an example of the preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and those skilled in the art should be able to realize the equivalent alternatives and obvious variations of the present invention.

Claims

1. The single-wafer cleaning equipment for realizing the etching reaction of the gradient structure is characterized by comprising a mounting plate, four spraying mechanisms, a supporting mechanism and a waste liquid collecting mechanism, wherein the four spraying mechanisms are arranged at the upper end of the mounting plate, the waste liquid collecting mechanism is arranged between the four spraying mechanisms, and each spraying mechanism is provided with one supporting mechanism;

2. A single wafer cleaning apparatus for performing a graded-structure etching reaction as recited in claim 1 in which the support frame and the connecting rod are provided with connecting pipes inside, the connecting pipes are connected to the first liquid outlet, the second liquid outlet and the third liquid outlet, and the connecting pipes are used for supplying a solution.

3. The single wafer cleaning apparatus for performing an etching reaction with a graded structure as recited in claim 2, wherein the first liquid outlet, the second liquid outlet and the third liquid outlet are connected to the connecting rod through a rotating shaft, a mounting hole is formed at a lower end of the connecting rod, a spring is disposed in the mounting hole, and the spring is connected to the rotating shaft.

4. A single wafer cleaning apparatus for performing an etching reaction on a graded structure as recited in claim 3 in which a rotation motor is further disposed in the mounting hole, and a telescopic rod of the rotation motor is connected to the rotation shaft through the spring.

5. The single wafer cleaning apparatus for performing etching reaction of gradient structure as claimed in claim 1, wherein each of the supporting mechanisms includes a telescopic cylinder and a fixing plate, the supporting frame is formed with a placement slot, the inner bottom wall of the placement slot is formed with one telescopic cylinder, the telescopic cylinder partially extends out of the placement slot, one side of the telescopic cylinder away from the supporting frame is formed with one fixing plate, and the fixing plate is connected with a telescopic rod of the telescopic cylinder.

6. A single wafer cleaning apparatus for performing etching reactions with gradient structures as recited in claim 1, wherein the waste liquid collecting mechanism comprises a collecting box, a support rod is disposed at an upper end of the mounting plate, the collecting box is disposed at an upper end of the support rod, and a cleaning chamber is disposed on the collecting box.

7. A single wafer cleaning apparatus for performing gradient structural etch reactions as recited in claim 6, wherein the collection chamber has a through hole formed in a bottom thereof, the through hole communicating with the cleaning chamber.

8. A single wafer cleaning apparatus for performing an etching reaction of a gradient structure as recited in claim 7, wherein a draft tube is provided at a lower end of the collection chamber, the draft tube communicating with the through hole.