CN217428355U - Microphone assembly and electronic equipment - Google Patents

Microphone assembly and electronic equipment Download PDF

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Publication number
CN217428355U
CN217428355U CN202220796141.9U CN202220796141U CN217428355U CN 217428355 U CN217428355 U CN 217428355U CN 202220796141 U CN202220796141 U CN 202220796141U CN 217428355 U CN217428355 U CN 217428355U
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China
Prior art keywords
diaphragm
back plate
vibrating diaphragm
microphone assembly
electrode
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CN202220796141.9U
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Chinese (zh)
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荣根兰
孟燕子
曹斌斌
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Memsensing Microsystems Suzhou China Co Ltd
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Memsensing Microsystems Suzhou China Co Ltd
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Abstract

The utility model provides a microphone subassembly and electronic equipment, wherein, the microphone subassembly includes basement, first vibrating diaphragm, second vibrating diaphragm and back plate, on the thickness direction of basement, the back plate is located first vibrating diaphragm with between the second vibrating diaphragm, wherein, first vibrating diaphragm with the second vibrating diaphragm passes through bearing structure links, makes first vibrating diaphragm with produce the linkage effect between the second vibrating diaphragm, incidenting first vibrating diaphragm perhaps under the effect of the sound energy on second vibrating diaphragm one side, make first vibrating diaphragm with the second vibrating diaphragm is whole towards or deviates from the direction of dorsal cavity removes, thereby leads to first vibrating diaphragm with distance between the back plate changes, and the second vibrating diaphragm with distance between the back plate changes simultaneously. The utility model provides a technical scheme can improve microphone subassembly's SNR.

Description

Microphone assembly and electronic equipment
Technical Field
The utility model relates to a microphone technical field, more specifically the utility model relates to a microphone subassembly and electronic equipment that says so.
Background
A microphone is a pressure sensor that finally converts a sound pressure signal into an electrical signal, and a small microphone manufactured by using a Micro Electro Mechanical System (MEMS) technology is called a Micro-Electro-Mechanical System (MEMS) microphone or a Micro microphone. MEMS microphone chips generally include a substrate, a diaphragm, and a backplate. The vibrating diaphragm and the back plate are important parts in an MEMS microphone chip, the vibrating diaphragm and the back plate are arranged in parallel and at intervals, the vibrating diaphragm and the back plate form two electrode plates of the flat capacitor, the vibrating diaphragm is used for vibrating under the action of sound waves, and the relative distance between the back plate and the vibrating diaphragm is changed, so that the capacitance value of the flat capacitor is changed, the change of the capacitance value is converted into an electric signal through a peripheral circuit, and the conversion of sound and electricity is realized.
Most of the existing MEMS microphones are composed of an induction diaphragm and a rigid back plate, and the microphones have low linearity and large harmonic distortion. With the expansion of MEMS microphone application scenarios (e.g., application scenario of singing with a mobile phone, etc.), users have higher and higher requirements for the voice quality of MEMS microphones. Accordingly, there is a need for improvements in the art.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least, provide a microphone subassembly and electronic equipment.
The purpose of the utility model is realized by adopting the following technical scheme:
according to an aspect of the utility model provides a microphone subassembly, include: the vibrating diaphragm comprises a substrate, a first vibrating diaphragm, a second vibrating diaphragm and a back plate, wherein the back plate is positioned between the first vibrating diaphragm and the second vibrating diaphragm in the thickness direction of the substrate; the substrate is provided with a back cavity which is communicated in the thickness direction of the substrate, a first supporting body which is used for supporting the second vibrating diaphragm is arranged on one side, close to the second vibrating diaphragm, of the substrate, a second supporting body which is used for supporting the back plate is arranged on one side, far away from the back cavity, of the second vibrating diaphragm, and a third supporting body which is used for supporting the first vibrating diaphragm is arranged on one side, far away from the second vibrating diaphragm, of the back plate; the back plate is provided with at least one back plate through hole penetrating through the back plate in the thickness direction, at least one supporting structure is arranged between the first vibrating diaphragm and the second vibrating diaphragm, the supporting structure penetrates through the at least one back plate through hole, and the first vibrating diaphragm and the second vibrating diaphragm are connected through the supporting structure.
Optionally, at least one first diaphragm through hole is formed in the first diaphragm, and the at least one first diaphragm through hole penetrates through the first diaphragm in the thickness direction.
Optionally, the first support is located at an edge of the substrate, so that a middle region of the second diaphragm is suspended above the back cavity; the second support body is positioned at the edge of the second vibrating diaphragm, so that the middle area of the back plate is suspended above the second vibrating diaphragm, and the second vibrating diaphragm and the back plate form a first variable capacitor; the third supporting body is located at the edge of the back plate, so that the middle area of the first vibrating diaphragm is suspended above the back plate, and the back plate and the first vibrating diaphragm form a second variable capacitor.
Optionally, a partial region of the first diaphragm forms a first electrode, the first diaphragm has at least one first hollow-out region, and the first hollow-out region surrounds the first electrode; part of the area of the back plate forms a second electrode; a part of the area of the second diaphragm forms a third electrode; wherein projections of the first electrode, the second electrode, and the third electrode overlap in a thickness direction of the substrate.
Optionally, the at least one first diaphragm through hole is located in the region where the first electrode is located.
Optionally, a portion of the first diaphragm outside the first hollow-out region forms a support portion, and at least one beam is disposed in the first hollow-out region, and the at least one beam fixedly connects the first electrode and the support portion.
Optionally, at least one of the at least one beam comprises a conductive medium to transmit electrical signals between the first electrode and an external circuit.
Optionally, the support structure is composed of one of silicon nitride, silicon oxide, and a composite of silicon nitride and silicon oxide.
Furthermore, at least one second diaphragm through hole is formed in the second diaphragm.
Optionally, the number of the second diaphragm through holes is less than or equal to 10.
Further, the order of magnitude of the first diaphragm through hole is the same as that of the back plate through hole.
Optionally, the number of the first diaphragm through holes and the number of the back plate through holes are both greater than or equal to 100.
Optionally, in the thickness direction of the substrate, a dust-proof structure for protecting the first diaphragm is disposed on a side of the first diaphragm, which is away from the back plate.
Optionally, a fourth supporting body for supporting the dust-proof structure is arranged on one side of the first diaphragm, which is far away from the back plate; the fourth supporting body is located at the edge of the first vibrating diaphragm, so that the dustproof structure is suspended above the first vibrating diaphragm.
According to another aspect of the present invention, there is provided an electronic device, including the microphone assembly according to any of the above embodiments.
The utility model provides a microphone subassembly and electronic equipment aim at with first vibrating diaphragm with the second vibrating diaphragm passes through bearing structure links, makes first vibrating diaphragm with produce the linkage effect between the second vibrating diaphragm, incidenting first vibrating diaphragm perhaps under the effect of the sound energy on second vibrating diaphragm one side, make first vibrating diaphragm with the second vibrating diaphragm is whole towards or deviates from the direction of dorsal cavity removes, thereby leads to first vibrating diaphragm with distance between the back plate changes, and the second vibrating diaphragm with distance between the back plate changes simultaneously, thereby has improved the SNR of microphone subassembly.
Further, the utility model provides a microphone subassembly and electronic equipment have realized the differential capacitance scheme of single back plate to microphone subassembly's performance has been promoted.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other embodiments based on these drawings without creative efforts.
Fig. 1 is a schematic perspective view of a microphone assembly according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of the microphone assembly of fig. 1;
FIG. 3 is a schematic diagram of a partial top view of the first diaphragm of FIG. 1;
FIG. 4 is an enlarged schematic view of the structure at A in FIG. 3;
FIG. 5 is a schematic top view of a portion of the backplate of FIG. 1;
FIG. 6 is a schematic diagram of a partial top view of the second diaphragm of FIG. 1;
fig. 7 is a perspective view of a microphone assembly according to another embodiment of the present invention.
Detailed Description
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
The embodiment of the utility model provides a microphone subassembly is the core component of MEMS microphone, can be applied to in the electronic equipment that has the sound collection function, for example smart mobile phone, panel computer, recording pen, audiphone, mobile unit etc.. The embodiment of the utility model provides a be not limited to above-mentioned application scene.
Example one
Fig. 1 is a schematic perspective view of a microphone assembly according to an embodiment of the present invention, and fig. 2 is a schematic sectional view of the microphone assembly in fig. 1.
Referring to fig. 1-2, an embodiment of the present invention provides a microphone assembly 1000 including a substrate 100, a first diaphragm 400, a second diaphragm 200, and a back plate 300, wherein the back plate 300 is located between the first diaphragm 400 and the second diaphragm 200 in a thickness direction of the substrate 100; the substrate 100 has a back cavity 101 penetrating in a thickness direction thereof, a first support 110 for supporting the second diaphragm 200 is disposed on a side of the substrate 100 close to the second diaphragm 200, a second support 120 for supporting the back plate 300 is disposed on a side of the second diaphragm 200 far from the back cavity 101, and a third support 130 for supporting the first diaphragm 400 is disposed on a side of the back plate 300 far from the second diaphragm 200; the back plate 300 is provided with at least one back plate through hole 312 penetrating through the back plate 300 in the thickness direction, at least one supporting structure 600 is arranged between the first diaphragm 400 and the second diaphragm 200, the supporting structure 600 is arranged in the at least one back plate through hole 312 in a penetrating manner, and the first diaphragm 400 and the second diaphragm 200 are connected through the supporting structure 600.
Specifically, the first support 110 is supported between the substrate 100 and the second diaphragm 200, and is used for electrically isolating the second diaphragm 200 from the substrate 100 and providing support for the second diaphragm 200. The second support 120 is supported between the second diaphragm 200 and the back plate 300, and is configured to electrically isolate the back plate 300 from the second diaphragm 200, and provide support for the back plate 300, so that the second diaphragm 200 and the back plate 300 are disposed oppositely and at an interval, and a second oscillation acoustic cavity for the second diaphragm 200 to vibrate is formed between the second diaphragm 200 and the back plate 300. The third supporting body 130 is supported between the first diaphragm 400 and the back plate 300, and is configured to electrically isolate the back plate 300 from the first diaphragm 400, and provide a support for the first diaphragm 400, so that the first diaphragm 400 and the back plate 300 are oppositely and alternately disposed, and a first oscillation acoustic cavity for the first diaphragm 400 to vibrate is formed between the first diaphragm 400 and the back plate 300.
Illustratively, the first support 110 is located at the edge of the substrate, so that the middle region of the second diaphragm 200 is suspended above the back cavity 101; the second support 120 is located at an edge of the second diaphragm 200, such that a middle region of the back plate 300 is suspended above the second diaphragm 200, and the second diaphragm 200 and the back plate 300 form a first variable capacitor; the third support 130 is located at an edge of the back plate 300, so that a middle region of the first diaphragm 400 is suspended above the back plate 300, and the back plate 300 and the first diaphragm 400 form a second variable capacitor.
Specifically, the first support 110, the second support 120, and the third support 130 are all insulating supports, and may be, for example, silicon oxide or silicon nitride. The thickness of the first support 110, the second support 120, and the third support 130 is between 2-3 um, for example, the thickness of the first support 110, the second support 120, and the third support 130 is around 2.5 um.
The embodiment of the present invention couples the first diaphragm 400 to the second diaphragm 200, so that the first diaphragm 400 and the second diaphragm 200 generate a linkage effect, that is, the moving directions of the first diaphragm 400 and the second diaphragm 200 are consistent; optionally, the support structure 600 is a support post, and the first diaphragm 400 and the second diaphragm 200 may be coupled using at least one support post extending between the diaphragms. The number of the supporting structures 600 of the present invention may be 1 or more. The support structure is composed of one of silicon nitride, silicon oxide, and a composite of silicon nitride and silicon oxide.
The utility model discloses in, because first vibrating diaphragm 400 with the linkage effect between the second vibrating diaphragm 200, the incident is in first vibrating diaphragm 400 perhaps sound energy (for example, acoustic pressure, sound wave, acoustics disturbance etc.) on second vibrating diaphragm 200 one side makes first vibrating diaphragm 400 with second vibrating diaphragm 200 is whole towards or deviates from the direction of back chamber 101 removes, thereby leads to first vibrating diaphragm 400 with distance between the backplate 300 changes, and second vibrating diaphragm 200 with distance between the backplate 300 changes simultaneously, thereby has improved microphone subassembly's SNR.
Illustratively, for example, sound energy is incident from a side close to the first diaphragm 400 (i.e., from an external space to the first diaphragm 400), and the first diaphragm 400 causes the first diaphragm 400 to push the second diaphragm 200 to move in a direction close to the back cavity 101 side in unison under the action of the sound energy, in which case, the distance between the first diaphragm 400 and the back plate 300 gradually decreases, and the distance between the second diaphragm 200 and the back plate 300 gradually increases.
Illustratively, for example, sound energy is incident from a side close to the second diaphragm 200 (i.e., is loaded onto the second diaphragm 200 through the back cavity 101), and the second diaphragm 200 is under the effect of the sound energy, so that the second diaphragm 200 pushes the first diaphragm 400 to move in a direction away from the side of the back cavity 101, in this case, the distance between the second diaphragm 200 and the back plate 300 gradually decreases, and the distance between the first diaphragm 400 and the back plate 300 gradually increases.
Further, at least one first diaphragm through hole 412 is disposed on the first diaphragm 400, and the at least one first diaphragm through hole 412 penetrates through the first diaphragm 400 in the thickness direction.
As shown in fig. 1 to 3, for example, if acoustic energy is incident from a side close to the first diaphragm 400 (i.e., is applied to the first diaphragm 400 from an external space), the at least one first diaphragm through hole 412 is used to transmit an acoustic wave from the external space to the back plate 300. Meanwhile, the at least one first diaphragm through hole 412 can allow air to pass through the first diaphragm 400, so as to reduce squeeze film damping between the first diaphragm 400 and the back plate 300, thereby reducing noise and improving the signal-to-noise ratio of the MEMS microphone.
If the sound energy is incident from a side close to the second diaphragm 200 (i.e. loaded onto the second diaphragm 200 through the back cavity 101), the at least one first diaphragm through hole 412 may serve as a venting structure, so that the corresponding air pressure at the at least one first diaphragm through hole 412 may be quickly and uniformly adjusted to release the pressure, so that the force applied to the first diaphragm 400 is uniform, and the diaphragm of the MEMS microphone assembly is ensured not to break.
Further, a partial area of the first diaphragm 400 forms a first electrode 410, the first diaphragm 400 has at least one first hollow area 401, and the first hollow area 401 surrounds the first electrode 410; a partial region of the back plate 300 constitutes a second electrode 310; a partial region of the second diaphragm 200 constitutes a third electrode 210; wherein, in the thickness direction of the substrate 100, the projections of the first electrode 410, the second electrode 310 and the third electrode 210 overlap. Therefore, the second electrode 310 and the third electrode 210 form a first capacitor structure of the microphone assembly 1000, the first electrode 410 and the second electrode 310 form a second capacitor structure of the microphone assembly 1000, the first capacitor structure and the second capacitor structure share the same back plate 300, and the capacitance values in the first capacitor structure and the second capacitor structure are changed through the linkage effect of the first diaphragm 400 and the second diaphragm 200, so that the first capacitor structure and the second capacitor structure can form a differential capacitor structure, and the performance of the signal-to-noise ratio of the microphone assembly 1000 can be improved to realize the acousto-electric conversion.
As shown in fig. 3 to fig. 4, the at least one first diaphragm through hole 412 is located in the region where the first electrode 410 is located.
A portion of the first diaphragm 400 outside the first hollow area 401 forms a support portion 420, and at least one beam 402 is disposed in the first hollow area 401, and the at least one beam 402 fixedly connects the first electrode 410 and the support portion 420.
Specifically, the first electrode 410 is supported and fixed by at least one beam 402 extending outward toward the periphery of the first diaphragm 400, and the at least one beam 402 disposed in the first hollow area 401 is connected to the support portion 420, so as to support and fix the first electrode 410; wherein at least one of the at least one beam 402 comprises a conductive medium to transmit electrical signals between the first electrode 410 and an external circuit (not shown).
For example, in the embodiment of the present invention, the external circuit may apply the first voltage signal to the first electrode 410 by forming a conductive film layer, such as electroplated copper, on at least one of the at least one beam 402.
Illustratively, in another embodiment of the present invention, the external circuit may apply the first voltage signal to the first electrode 410 by doping the semiconductor material layer of at least one of the at least one beam 402 to form an N-type dopant or a P-type dopant.
As shown in fig. 3 and 5, the first diaphragm through hole 412 is of the same order as the back plate through hole 312. For example, of the order of hundreds or thousands, rather than tens of quantities as in conventional techniques. The first diaphragm through holes 412 are arranged in a large number, so that the squeeze film damping between the first diaphragm 400 and the back plate 300 can be reduced, the noise is reduced, and the signal-to-noise ratio of the MEMS microphone assembly is improved. Optionally, the number of the first diaphragm through holes 412 and the number of the backplate through holes 312 are both greater than or equal to 100.
As shown in fig. 6, at least one second diaphragm through hole 212 is disposed on the second diaphragm 200. Alternatively, the at least one second diaphragm through hole 212 may be used as a relief hole, and the order of the second diaphragm through hole 212 may be tens of orders or several orders, so as to balance the air pressure on both sides of the second diaphragm 200 and release the stress of the second diaphragm 200, thereby improving the sensitivity of the microphone. Illustratively, the number of the second diaphragm through holes 212 is less than or equal to 10. In addition, when sound energy is directly loaded onto the second diaphragm 200 from the back cavity 101, at this time, because the number of the second diaphragm through holes 212 is small, the sound pressure load may cause the second diaphragm 200 to deform greatly, and the second diaphragm 200 may link the sound pressure load received by itself to the first diaphragm 400, so as to push the first diaphragm 400 to move together in a direction away from the back cavity 101.
Example two
Fig. 7 is a perspective view of a microphone assembly according to another embodiment of the present invention.
As shown in fig. 7, fig. 7 differs from fig. 1 exemplarily in that: in fig. 7, in the thickness direction of the substrate 100, a dust-proof structure 500 for protecting the first diaphragm 400 is disposed on a side of the first diaphragm 400 away from the back plate 300. So as to prevent dust in the environment from entering the backplate through hole 312 (sound hole) in the sound wave conduction region of the backplate 300 through at least one first diaphragm through hole 412 on the first diaphragm 400 or the first hollow-out region 401 on the first diaphragm 400.
Optionally, in order not to affect transmission of sound pressure load, a fourth supporting body 140 for supporting the dust-proof structure 500 is disposed on a side of the first diaphragm 400 away from the back plate 300; the fourth supporting body 140 is located at an edge of the first diaphragm 400, so that the dust-proof structure 500 is suspended above the first diaphragm 400. Preferably, the dust-proof structure 400 is detachably or movably mounted above the first diaphragm 400 to avoid blocking transmission of the sound pressure load.
The utility model also provides an electronic equipment, electronic equipment includes as above any kind of microphone subassembly. The microphone assembly can be applied to various electronic devices, such as smart phones, tablet computers, recording pens, hearing aids, vehicle-mounted devices and the like.
Therefore, adopt the embodiment of the utility model provides a microphone subassembly and electronic equipment are showing the SNR that has promoted the microphone. The microphone assembly comprises a substrate, a first vibrating diaphragm, a second vibrating diaphragm and a back plate, wherein the back plate is located between the first vibrating diaphragm and the second vibrating diaphragm in the thickness direction of the substrate, the first vibrating diaphragm and the second vibrating diaphragm are connected through the supporting structure, linkage effect is generated between the first vibrating diaphragm and the second vibrating diaphragm, and under the action of sound energy incident on one side of the first vibrating diaphragm or the second vibrating diaphragm, the first vibrating diaphragm and the second vibrating diaphragm integrally move towards or depart from the direction of the back cavity, so that the distance between the first vibrating diaphragm and the back plate is changed, and the distance between the second vibrating diaphragm and the back plate is changed simultaneously. Thereby improving the signal-to-noise ratio of the microphone assembly.
Further, the utility model provides a microphone subassembly has realized the differential capacitance scheme of back polar plate to microphone subassembly's performance has been promoted.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention in its corresponding aspects.

Claims (15)

1. A microphone assembly, comprising: the vibrating diaphragm comprises a substrate (100), a first vibrating diaphragm (400), a second vibrating diaphragm (200) and a back plate (300), wherein the back plate (300) is located between the first vibrating diaphragm (400) and the second vibrating diaphragm (200) in the thickness direction of the substrate (100);
the substrate (100) is provided with a back cavity (101) penetrating in the thickness direction of the substrate, a first support body (110) used for supporting the second diaphragm (200) is arranged on one side, close to the second diaphragm (200), of the substrate (100), a second support body (120) used for supporting the back plate (300) is arranged on one side, far away from the back cavity (101), of the second diaphragm (200), and a third support body (130) used for supporting the first diaphragm (400) is arranged on one side, far away from the second diaphragm (200), of the back plate (300);
the back plate (300) is provided with at least one back plate through hole (312) penetrating through the back plate (300) in the thickness direction, at least one supporting structure (600) is arranged between the first vibrating diaphragm (400) and the second vibrating diaphragm (200), the supporting structure (600) is arranged in the at least one back plate through hole (312) in a penetrating mode, and the first vibrating diaphragm (400) and the second vibrating diaphragm (200) are connected through the supporting structure (600).
2. The microphone assembly according to claim 1, wherein the first diaphragm (400) is provided with at least one first diaphragm through hole (412), and the at least one first diaphragm through hole (412) penetrates the first diaphragm (400) in the thickness direction.
3. The microphone assembly of claim 2,
the first support body (110) is positioned at the edge of the substrate (100), so that the middle area of the second diaphragm (200) is suspended above the back cavity (101);
the second support (120) is located at the edge of the second diaphragm (200), so that the middle area of the back plate (300) is suspended above the second diaphragm (200), and the second diaphragm (200) and the back plate (300) form a first variable capacitor;
the third supporting body (130) is located at the edge of the back plate (300), so that the middle area of the first diaphragm (400) is suspended above the back plate (300), and the back plate (300) and the first diaphragm (400) form a second variable capacitor.
4. The microphone assembly of claim 3,
a partial region of the first membrane (400) forms a first electrode (410), the first membrane (400) has at least one first hollow-out region (401), and the first hollow-out region (401) surrounds the first electrode (410);
a partial region of the back plate (300) forms a second electrode (310);
a partial area of the second diaphragm (200) constitutes a third electrode (210);
wherein projections of the first electrode (410), the second electrode (310), and the third electrode (210) overlap in a thickness direction of the substrate (100).
5. The microphone assembly of claim 4, wherein the at least one first diaphragm through hole (412) is located in a region where the first electrode (410) is located.
6. The microphone assembly of claim 5, wherein a portion of the first diaphragm (400) outside the first hollowed-out region (401) constitutes a support portion (420), and wherein at least one beam (402) is disposed within the first hollowed-out region (401), the at least one beam (402) fixedly connecting the first electrode (410) with the support portion (420).
7. The microphone assembly of claim 6,
at least one of the at least one beam (402) contains a conductive medium to transmit electrical signals between the first electrode (410) and an external circuit.
8. The microphone assembly of claim 1,
the support structure (600) is composed of one of silicon nitride and silicon oxide.
9. The microphone assembly as claimed in claim 1, wherein the second diaphragm (200) is provided with at least one second diaphragm through-hole (212).
10. The microphone assembly of claim 9, wherein the number of second diaphragm through holes (212) is less than or equal to 10.
11. The microphone assembly of claim 4, wherein the first diaphragm through hole (412) is of the same order of magnitude as the backplate through hole (312).
12. The microphone assembly of claim 11,
the number of the first diaphragm through holes (412) and the number of the back plate through holes (312) are both greater than or equal to 100.
13. The microphone assembly of any one of claims 1 to 12,
in the thickness direction of the substrate (100), a dustproof structure (500) for protecting the first diaphragm (400) is arranged on one side of the first diaphragm (400) far away from the back plate (300).
14. The microphone assembly of claim 13,
a fourth supporting body (140) for supporting the dustproof structure (500) is arranged on one side, away from the back plate (300), of the first diaphragm (400);
the fourth supporting body (140) is located at an edge of the first diaphragm (400), so that the dustproof structure (500) is suspended above the first diaphragm (400).
15. An electronic device, characterized in that it comprises a microphone assembly (1000) according to any of claims 1 to 14.
CN202220796141.9U 2022-04-07 2022-04-07 Microphone assembly and electronic equipment Active CN217428355U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202220796141.9U CN217428355U (en) 2022-04-07 2022-04-07 Microphone assembly and electronic equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202220796141.9U CN217428355U (en) 2022-04-07 2022-04-07 Microphone assembly and electronic equipment

Publications (1)

Publication Number Publication Date
CN217428355U true CN217428355U (en) 2022-09-13

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Application Number Title Priority Date Filing Date
CN202220796141.9U Active CN217428355U (en) 2022-04-07 2022-04-07 Microphone assembly and electronic equipment

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CN (1) CN217428355U (en)

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