CN217428107U - Temperature acquisition analog-to-digital conversion circuit and central temperature control system - Google Patents
Temperature acquisition analog-to-digital conversion circuit and central temperature control system Download PDFInfo
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- CN217428107U CN217428107U CN202220845313.7U CN202220845313U CN217428107U CN 217428107 U CN217428107 U CN 217428107U CN 202220845313 U CN202220845313 U CN 202220845313U CN 217428107 U CN217428107 U CN 217428107U
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Abstract
The utility model provides a temperature acquisition analog-to-digital conversion circuit and a central temperature control system.A first triode emitter is respectively connected with one end of a third resistor and one end of a fourth resistor; the base electrode of the first triode is respectively connected with the other end of the fourth resistor and the collector electrode of the third triode; the collector of the first triode is connected with one end of the temperature sensor; the other end of the third resistor is respectively connected with one end of the second resistor, one end of the second capacitor and the base electrode of the third triode; the other end of the second resistor is connected with a collector of the second triode; the other end of the temperature sensor is respectively connected with one end of the first capacitor, one end of the first resistor and the base electrode of the second triode; and the other end of the first capacitor is respectively connected with the other end of the first resistor, the emitter of the second triode, the other end of the second capacitor and the collector of the third triode. The utility model discloses a temperature acquisition analog-to-digital conversion circuit's circuit structure makes the temperature of gathering can not influence because of the distance.
Description
Technical Field
The utility model relates to a conversion circuit's technical field specifically relates to a temperature acquisition analog-to-digital conversion circuit and central temperature control system.
Background
The temperature acquisition mostly adopts the mode of temperature sensing voltage of partial pressure collection nowadays.
Chinese utility model patent document No. CN205847232U discloses an AD conversion circuit for temperature acquisition, which includes a temperature sensor, a power source VCC, a voltage comparison module, a one-bit DA module, and a single chip microcomputer U2; analog voltage of the temperature sensor reaches the non-inverting input end of the comparator U1A after being filtered by the capacitor C1 and the resistor R1; the output end of the comparator U1A is connected with the input port of the singlechip U2; the one-bit DA module is connected with an output port of the singlechip U2 and an inverting input end of the comparator U1A, a level signal sent by the output port of the singlechip U2 passes through the resistor R4, is subjected to voltage division by the resistor R5, is filtered by the resistor R3 and the capacitor C2, and then reaches the inverting input end of the comparator U1A.
In view of the above prior art, the inventor believes that the temperature distance is limited by the collecting mode of collecting the temperature-sensing voltage by dividing the voltage, and the collected voltage analog quantity generates voltage drop due to the influence of the internal resistance of the wiring harness.
SUMMERY OF THE UTILITY MODEL
To the defect among the prior art, the utility model aims at providing a temperature acquisition analog-to-digital conversion circuit and central temperature control system.
According to the utility model provides a temperature acquisition analog-to-digital conversion circuit, including oscillating circuit, oscillating circuit includes first oscillation unit, second oscillation unit, first triode Q1, second triode Q2, third triode Q3 and fourth resistance R4;
the first oscillation unit comprises a first resistor R1, a temperature sensing N1 and a first capacitor C1;
the second oscillating unit comprises a second resistor R2, a third resistor R3 and a second capacitor C2;
an emitter of the first triode Q1 is a first power supply input end of the oscillating circuit, and an emitter of the first triode Q1 is respectively connected with one end of the third resistor R3 and one end of the fourth resistor R4;
the base electrode of the first triode Q1 is respectively connected with the other end of the fourth resistor R4 and the collector electrode of the third triode Q3;
the collector of the first triode Q1 is connected with one end of the temperature sensing N1;
the other end of the third resistor R3 is respectively connected with one end of a second resistor R2, one end of a second capacitor C2 and the base of a third triode Q3;
the other end of the second resistor R2 is connected with the collector of a second triode Q2;
the other end of the temperature sensing N1 is respectively connected with one end of a first capacitor C1, one end of a first resistor R1 and the base electrode of a second triode Q2;
the other end of the first capacitor C1 is a second power supply input end of the oscillation circuit, and the other end of the first capacitor C1 is connected to the other end of the first resistor R1, the emitter of the second triode Q2, the other end of the second capacitor C2 and the collector of the third triode Q3 respectively.
Preferably, the first power supply input end of the oscillating circuit is connected with a power supply voltage anode;
and a second power supply input end of the oscillating circuit is connected with a negative pole of the power supply voltage.
Preferably, the first triode Q1 is a PNP triode;
the second triode Q2 and the third triode Q3 are NPN triodes.
Preferably, the second transistor Q2 is replaced by a second field effect transistor, the emitter of the second transistor Q2 is replaced by the source of the second field effect transistor, the base of the second transistor Q2 is replaced by the gate of the second field effect transistor, and the collector of the second transistor Q2 is replaced by the drain of the second field effect transistor.
Preferably, the third transistor Q3 is replaced by a third fet, the emitter of the third transistor Q3 is replaced by the source of the third fet, the base of the third transistor Q3 is replaced by the gate of the third fet, and the collector of the third transistor Q3 is replaced by the drain of the third fet.
Preferably, the first triode Q1 is replaced by a first field effect transistor, the emitter of the first triode Q1 is replaced by the source of the first field effect transistor, the base of the first triode Q1 is replaced by the gate of the first field effect transistor, and the collector of the first triode Q1 is replaced by the drain of the first field effect transistor.
Preferably, the first field effect transistors are N-channel field effect transistors respectively;
the second field effect transistor and the third field effect transistor are P-channel field effect transistors respectively.
Preferably, the third resistor R3 is replaced by a temperature sensor.
Preferably, the temperature sensing N1 is an NTC temperature sensor.
According to the utility model provides a pair of central temperature control system, including temperature acquisition analog-to-digital conversion circuit.
Compared with the prior art, the utility model discloses following beneficial effect has:
1. the utility model adopts the circuit structure of the temperature acquisition analog-to-digital conversion circuit, so that the acquired temperature is not influenced by the distance;
2. the circuit triode of the utility model is replaced by the field effect transistor, which can reduce the leakage current and has higher precision;
3. the circuit of the utility model replaces R3 with the temperature sensor, which makes the wavelength of the digital square wave larger, the distinction more obvious and the detection convenient;
4. the NTC temperature sensor adopted by the temperature sensor has higher resistance value change and larger duty ratio change at high temperature, and is convenient for detecting high temperature.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
fig. 1 is the temperature acquisition analog-to-digital conversion circuit diagram of the present invention.
Detailed Description
The present invention will be described in detail with reference to specific embodiments. The following examples will assist those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any way. It should be noted that various changes and modifications can be made by one skilled in the art without departing from the spirit of the invention. These all belong to the protection scope of the present invention.
The embodiment one of the utility model discloses temperature acquisition analog-to-digital conversion circuit, as shown in fig. 1, including oscillating circuit, oscillating circuit includes first oscillation unit, second oscillation unit, first triode Q1, second triode Q2, third triode Q3 and fourth resistance R4; the first oscillating unit comprises a first resistor R1, a temperature sensing N1 and a first capacitor C1; the second oscillation unit includes a second resistor R2, a third resistor R3, and a second capacitor C2. The first oscillating unit and the second oscillating unit are RC oscillating units. The first transistor Q1 is a PNP transistor. The second transistor Q2 and the third transistor Q3 are NPN transistors. The temperature sensing N1 is an NTC temperature sensor.
An emitter of the first transistor Q1 is a first power input terminal of the oscillating circuit, and an emitter of the first transistor Q1 is connected to one end of the third resistor R3 and one end of the fourth resistor R4, respectively. The first power supply input end of the oscillating circuit is connected with the positive pole of the power supply voltage. The base of the first triode Q1 is connected to the other end of the fourth resistor R4 and the collector of the third triode Q3, respectively. The collector of the first triode Q1 is connected with one end of the temperature sensing N1. The junction of the fourth resistor R4 and the third transistor Q3 is the output terminal.
The other end of the third resistor R3 is connected to one end of the second resistor R2, one end of the second capacitor C2, and the base of the third transistor Q3, respectively.
The other end of the second resistor R2 is connected to the collector of the second transistor Q2.
The other end of the temperature sensing N1 is respectively connected with one end of a first capacitor C1, one end of a first resistor R1 and the base of a second triode Q2.
The other end of the first capacitor C1 is a second power supply input end of the oscillation circuit, and the other end of the first capacitor C1 is connected to the other end of the first resistor R1, the emitter of the second transistor Q2, the other end of the second capacitor C2, and the collector of the third transistor Q3, respectively. And a second power supply input end of the oscillating circuit is connected with the negative pole of the power supply voltage.
The circuit is an RC oscillation circuit and comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a capacitor C1, a capacitor C2, a PNP triode Q1, an NPN triode Q2, an NPN triode Q3 and a temperature-sensitive NTC N1. The PNP transistor is a transistor formed by 2P-type semiconductors (hole-type semiconductors) and 1N-type semiconductor (electron-type semiconductor) sandwiched therebetween, and is called a PNP transistor. The NPN type triode is formed by clamping a P type semiconductor between two N type semiconductors; also known as a transistor. The temperature-sensing NTC is also called NTC temperature sensor, and is a thermistor and a probe. Among them, NTC is called Negative Temperature Coefficient in English, and Chinese translation is Negative Temperature Coefficient.
The utility model discloses a theory of operation: VCC is electrified, R3 charges C2, and the formula is satisfied
VCC is called Volt Current connector in English, and Chinese translation is power supply voltage. U denotes the capacitor voltage at time t, U ∞ Represents 0.7v, U 0 Representing 0v, e is a natural constant of about 2.718.
When the voltage of C2 exceeds BE (B represents a base electrode/E represents an emitter electrode) threshold of Q3 by 0.7v, the conduction time can BE calculated by the above formula, Q3 is conducted, the voltage at two ends of R4 is equal to VCC, Q1 is further conducted, VCC supplies power to C1 through equivalent resistors of N1 and R1, and the formula is met
RN1 represents the resistance of the NTC temperature sensor. When the voltage of C1 exceeds BE threshold value 0.7v of Q2, the required on-time can BE calculated by the above formula, Q2 is conducted, C2 discharges through R2 and Q2, when the voltage of C2 drops below 0.7v, Q3 is closed, further Q1 is closed, at the moment, C1 discharges through R1, and the formula is met
When the voltage of the C1 drops below 0.7v, Q2 is turned off, and then VCC charges C2 through R3, and the process is cycled;
the change of temperature causes the resistance of N1 to change, and the resistance is calculated by the formula
It can be known that the on-time of Q2 is changed, the duty ratio is calculated through the charging and discharging time of C1 and C2, the resistance value of N1 resistor can be calculated by comparing with the duty ratio detected at OUT, and the current temperature can be detected by comparing with the resistance table. VCC represents the positive pole of the supply voltage, and GND represents the negative pole of the supply voltage; OUT represents an output terminal which outputs a square wave signal; temperature was collected by temperature sensing N1.
The circuit can realize the remote acquisition, the analog quantity is required to be converted into the digital quantity, the temperature-sensitive variable resistance is converted into a PWM square wave signal (PWM is called Pulse width modulation totally, and Chinese translation is Pulse width modulation), and the acquired temperature cannot be influenced by the distance. The circuit has simple structure and low cost. The circuit converts the analog quantity of the temperature into the digital quantity of the square wave, improves the transmission capability, and can improve the transmission waveform through multi-stage transmission.
The embodiment of the utility model provides a still disclose a transport means, including temperature acquisition analog-to-digital conversion circuit. The vehicle includes a vehicle and a vessel.
The embodiment of the utility model provides a still disclose a central temperature control system, including temperature acquisition analog-to-digital conversion circuit.
The utility model discloses can be applied to large-scale transport means such as vehicle, boats and ships, also can be used to the central temperature control system in house.
The embodiment of the utility model provides a second still discloses a temperature acquisition analog-to-digital conversion circuit, lies in with the difference of embodiment one, wherein Q1, Q2, Q3 can be replaced by corresponding MOS pipe, and resistance R3 can be replaced by the thalposis. The MOS Transistor is generally called as MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) in English, and the Chinese translation is a Metal-Oxide-Semiconductor Field-Effect Transistor.
The first triode Q1 is replaced by a first field effect transistor, the emitter of the first triode Q1 is replaced by the source of the first field effect transistor, the base of the first triode Q1 is replaced by the gate of the first field effect transistor, and the collector of the first triode Q1 is replaced by the drain of the first field effect transistor.
The second triode Q2 is replaced by a second field effect transistor, the emitter of the second triode Q2 is replaced by the source of the second field effect transistor, the base of the second triode Q2 is replaced by the gate of the second field effect transistor, and the collector of the second triode Q2 is replaced by the drain of the second field effect transistor.
The third triode Q3 is replaced by a third field effect transistor, the emitter of the third triode Q3 is replaced by the source of the third field effect transistor, the base of the third triode Q3 is replaced by the gate of the third field effect transistor, and the collector of the third triode Q3 is replaced by the drain of the third field effect transistor.
The first field effect transistors are respectively N-channel field effect transistors; the second field effect transistor and the third field effect transistor are P-channel field effect transistors respectively. The third resistor R3 is replaced with a temperature sensor.
In addition, the circuit can have other three conditions: firstly, a second triode Q2 is replaced by a second field effect transistor; second, only the third transistor Q3 is replaced by a third fet; and thirdly, replacing the second triode Q2 with a second field effect transistor and replacing the third triode Q3 with a third field effect transistor. Leakage current is reduced under all three conditions, and the precision is higher.
In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The foregoing description of the specific embodiments of the invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by those skilled in the art within the scope of the appended claims without departing from the spirit of the invention. The embodiments and features of the embodiments of the present application may be combined with each other arbitrarily without conflict.
Claims (10)
1. The temperature acquisition analog-to-digital conversion circuit is characterized by comprising an oscillation circuit, wherein the oscillation circuit comprises a first oscillation unit, a second oscillation unit, a first triode Q1, a second triode Q2, a third triode Q3 and a fourth resistor R4;
the first oscillating unit comprises a first resistor R1, a temperature sensing N1 and a first capacitor C1;
the second oscillating unit comprises a second resistor R2, a third resistor R3 and a second capacitor C2;
an emitter of the first triode Q1 is a first power supply input end of the oscillating circuit, and an emitter of the first triode Q1 is respectively connected with one end of the third resistor R3 and one end of the fourth resistor R4;
the base electrode of the first triode Q1 is respectively connected with the other end of the fourth resistor R4 and the collector electrode of the third triode Q3;
the collector of the first triode Q1 is connected with one end of the temperature sensing N1;
the other end of the third resistor R3 is respectively connected with one end of the second resistor R2, one end of the second capacitor C2 and the base electrode of the third triode Q3;
the other end of the second resistor R2 is connected with the collector of a second triode Q2;
the other end of the temperature sensing N1 is respectively connected with one end of a first capacitor C1, one end of a first resistor R1 and the base electrode of a second triode Q2;
the other end of the first capacitor C1 is a second power supply input end of the oscillation circuit, and the other end of the first capacitor C1 is connected to the other end of the first resistor R1, the emitter of the second triode Q2, the other end of the second capacitor C2 and the collector of the third triode Q3 respectively.
2. The temperature acquisition analog-to-digital conversion circuit according to claim 1, wherein the first power supply input end of the oscillation circuit is connected with a power supply voltage anode;
and a second power supply input end of the oscillating circuit is connected with a negative pole of the power supply voltage.
3. The temperature-acquiring analog-to-digital conversion circuit according to claim 1, wherein the first transistor Q1 is a PNP transistor;
the second triode Q2 and the third triode Q3 are NPN triodes.
4. The temperature-acquiring analog-to-digital conversion circuit of claim 1, wherein the second transistor Q2 is replaced by a second field effect transistor, the emitter of the second transistor Q2 is replaced by the source of the second field effect transistor, the base of the second transistor Q2 is replaced by the gate of the second field effect transistor, and the collector of the second transistor Q2 is replaced by the drain of the second field effect transistor.
5. The temperature-acquiring analog-to-digital conversion circuit of claim 4, wherein the third transistor Q3 is replaced by a third field effect transistor, the emitter of the third transistor Q3 is replaced by the source of the third field effect transistor, the base of the third transistor Q3 is replaced by the gate of the third field effect transistor, and the collector of the third transistor Q3 is replaced by the drain of the third field effect transistor.
6. The temperature-acquiring analog-to-digital conversion circuit of claim 5, wherein the first transistor Q1 is replaced by a first field effect transistor, the emitter of the first transistor Q1 is replaced by the source of the first field effect transistor, the base of the first transistor Q1 is replaced by the gate of the first field effect transistor, and the collector of the first transistor Q1 is replaced by the drain of the first field effect transistor.
7. The temperature acquisition analog-to-digital conversion circuit according to claim 6, wherein the first field effect transistors are N-channel field effect transistors, respectively;
the second field effect transistor and the third field effect transistor are P-channel field effect transistors respectively.
8. The temperature-acquisition analog-to-digital conversion circuit of claim 1, wherein the third resistor R3 is replaced by a temperature sensor.
9. The temperature-acquiring analog-to-digital conversion circuit of claim 1, wherein the temperature-sensing N1 is an NTC temperature sensor.
10. A central temperature control system comprising the temperature acquisition analog-to-digital conversion circuit according to any one of claims 1 to 9.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117748936A (en) * | 2024-02-19 | 2024-03-22 | 成都麦特斯科技有限公司 | Low-power consumption boost system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117748936A (en) * | 2024-02-19 | 2024-03-22 | 成都麦特斯科技有限公司 | Low-power consumption boost system |
| CN117748936B (en) * | 2024-02-19 | 2024-04-26 | 成都麦特斯科技有限公司 | Low-power consumption boost system |
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