CN217428003U

CN217428003U - Inverter unit for realizing insulated installation of Insulated Gate Bipolar Transistor (IGBT)

Info

Publication number: CN217428003U
Application number: CN202220751538.6U
Authority: CN
Inventors: 秦孝辉; 王哲
Original assignee: Shandong Hengdian Electric Co ltd
Current assignee: Shandong Hengdian Electric Co ltd
Priority date: 2022-03-31
Filing date: 2022-03-31
Publication date: 2022-09-13
Anticipated expiration: 2032-03-31

Abstract

The utility model relates to a capability test equipment technical field, concretely relates to realize contravariant unit of IGBT insulation installation, including first epoxy board, second epoxy board, current inductor and three-phase rectifier bridge module, the right side fixedly connected with second epoxy board of first epoxy board, the lower extreme of second epoxy board is equipped with three-phase rectifier bridge template. The utility model overcomes prior art's is not enough, through setting up three-phase rectifier bridge module and current inductor, the device installs three-phase rectifier bridge module in one side of current inductor, three-phase rectifier bridge module comprises recovery diode chip and high-voltage thyristor chip, it has higher stability to compare ordinary rectifier diode to recover the diode chip, high-voltage thyristor chip is convenient for weld, interconnecting link can be reduced, when making the main circuit current of inverter unit with the converter carry out the contravariant, the current inductor can detect the electric current of main circuit, make this device more stable, be favorable to actual use.

Description

Inverter unit for realizing insulated installation of Insulated Gate Bipolar Transistor (IGBT)

Technical Field

The utility model relates to a converter contravariant unit technical field specifically is a realize contravariant unit of IGBT insulation installation.

Background

The frequency converter mainly comprises a rectifying unit (alternating current to direct current), a filtering unit, an inverting unit (direct current to alternating current), a braking unit, a driving unit, a detection unit micro-processing unit and the like. The frequency converter adjusts the voltage and frequency of the output power supply by switching on and off the internal IGBT.

But present contravariant unit is when using interconnecting link more, and leads to the contravariant unit unstable, is unfavorable for in-service use to current contravariant unit does not have insulation protection's effect when installing the IGBT module, takes place the danger of electrocuteeing easily in the installation, reduces the security of device, is unfavorable for actual use.

SUMMERY OF THE UTILITY MODEL

In order to solve the technical problem, the utility model provides a following technical scheme:

an inverter unit for realizing insulated installation of an IGBT comprises a first epoxy plate, a second epoxy plate, a current inductor and a three-phase rectifier bridge module, wherein the second epoxy plate is fixedly connected to the right side of the first epoxy plate, a three-phase rectifier bridge template is arranged at the lower end of the second epoxy plate, the current inductor is installed on the left side of the three-phase rectifier bridge template, an IGBT module is installed at one end of the second epoxy plate, a main terminal is fixedly connected to the upper end of the IGBT module, and an IGBT chip is installed on one side of the main terminal;

the three-phase rectifier bridge module is composed of a recovery diode chip and a high-voltage thyristor chip, and the high-voltage thyristor chip is arranged on one side of the recovery diode chip.

Preferably, a radiating fin is installed on one side of the IGBT module, a first flat wave capacitor is fixedly installed on the left side of the radiating fin, and the number of the first flat wave capacitors is two, and the first flat wave capacitors are identical in size.

Preferably, a second flat wave capacitor is fixedly mounted on the right side of the radiating fin, and the first flat wave capacitor and the second flat wave capacitor are arranged in a centrosymmetric distribution mode.

Preferably, the front end fixed mounting of second epoxy board is female arranges of stromatolite, female front end left side of arranging of stromatolite is equipped with the positive plate, the negative plate is installed on the right side of positive plate, positive output polar plate is installed on the right side of negative plate, and the right side of positive output polar plate installs negative output polar plate.

Preferably, the IGBT modules are three and have the same size, and are distributed in a transverse equidistant mode.

Preferably, the main terminals are three and are arranged and distributed in a transverse equidistant mode.

The embodiment of the utility model provides a realize contravariant unit of insulating installation of IGBT possesses following beneficial effect: this kind of modified contravariant unit is less when using interconnecting link, and can not lead to the contravariant unit unstable, is favorable to in-service use to current contravariant unit has insulation protection's effect when installing the IGBT module, is difficult to take place the danger of electrocuteeing in the installation, has promoted the security of device, is favorable to actual use.

1. Through setting up three-phase rectifier bridge module and current inductor, the device installs three-phase rectifier bridge module in one side of current inductor, three-phase rectifier bridge module comprises recovery diode chip and high-voltage thyristor chip, recovery diode chip compares ordinary rectifier diode and has higher stability, high-voltage thyristor chip is convenient for weld, connecting circuit can be reduced, when making inverter unit carry out the contravariant with the main circuit current of converter, the current inductor can detect the electric current of main circuit, make this device more stable, be favorable to actual use.

2. Through setting up first epoxy board and second epoxy board, this contravariant unit is equipped with first epoxy board and second epoxy board at the female middle-end of arranging of IGBT module and stromatolite, first epoxy board and second epoxy board can form one insulating region, be convenient for carry out the installation of IGBT module, realize the insulating installation of IGBT, prevent that IGBT module installation process from taking place to electrocute danger, the security of the device is improved, the IGBT module is the switching device who is used for the contravariant unit circuit, the circuit data that the IGBT chip was collected is handled, control information to the control unit makes the reaction, the on-off sensitivity is high, the person of being convenient for use adjusts the circuit, be favorable to actual use.

Drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention. In the drawings:

FIG. 1 is a schematic view of the overall structure of the present invention;

FIG. 2 is a right side schematic view of the present invention;

fig. 3 is a schematic diagram of the IGBT module structure of the present invention.

In the figure: 1. a heat sink; 2. a first smoothing capacitor; 3. a first epoxy board; 4. a second epoxy plate; 5. a laminated busbar; 6. a positive plate; 7. a negative plate; 8. a positive output electrode plate; 9. a negative output electrode plate; 10. a current sensor; 11. a three-phase rectifier bridge module; 12. a second smoothing capacitor; 13. an IGBT module; 14. a main terminal; 15. an IGBT chip.

Detailed Description

The preferred embodiments of the present invention will be described hereinafter with reference to the accompanying drawings, and it should be understood that the preferred embodiments described herein are merely for purposes of illustration and explanation, and are not intended to limit the present invention.

Example (b): as shown in fig. 1-3, an inverter unit for realizing insulated installation of an IGBT includes a first epoxy plate 3, a second epoxy plate 4, a current inductor 10 and a three-phase rectifier bridge module 11, the second epoxy plate 4 is fixedly connected to the right side of the first epoxy plate 3, the lower end of the second epoxy plate 4 is provided with the three-phase rectifier bridge template 11, the current inductor 10 is installed on the left side of the three-phase rectifier bridge template 11, the IGBT module 13 is installed at one end of the second epoxy plate 4, the upper end of the IGBT module 13 is fixedly connected with a main terminal 14, one side of the main terminal 14 is provided with the IGBT chip 15, and the three-phase rectifier bridge module 11 is composed of a recovery diode chip and a high-voltage thyristor chip, the recovery diode chip has higher stability than a common rectifier diode, the high-voltage thyristor chip is convenient to weld, and can reduce connection lines, which is beneficial to practical use.

Specifically, referring to fig. 1-2, since the heat sink 1 is installed on one side of the IGBT module 13, the first flat-wave capacitor 2 is fixedly installed on the left side of the heat sink 1, and two first flat-wave capacitors 2 having the same size are provided, the heat sink 1 can rapidly dissipate heat of the device.

Specifically, referring to fig. 3, the second smoothing capacitor 12 is fixedly installed on the right side of the heat sink 1, and the first smoothing capacitor 2 and the second smoothing capacitor 12 are arranged in a central symmetrical distribution, so that the rectified current is recovered by the first smoothing capacitor 2 and the second smoothing capacitor 12, the circuit current can be applied to an electrical appliance, and the first smoothing capacitor 2 and the second smoothing capacitor 12 absorb the residual current, thereby facilitating the connection with the electrical appliance.

Specifically, referring to fig. 3, a laminated busbar 5 is fixedly mounted at the front end of the second epoxy plate 4, a positive plate 6 is arranged on the left side of the front end of the laminated busbar 5, a negative plate 7 is mounted on the right side of the positive plate 6, a positive output plate 8 is mounted on the right side of the negative plate 7, a negative output plate 9 is mounted on the right side of the positive output plate 8, the positive plate 6 and the negative plate 7 are unit input ends, and the positive output plate 8 and the negative output plate 9 are output ends, so that the connection is simple and convenient, and the practicability is strong.

Specifically, referring to fig. 2, since the three IGBT modules 13 are arranged in the same size, the IGBT modules 13 are all distributed in a transverse equidistant manner, and the IGBT modules 13 are switching devices for the inverter unit circuit, the IGBT modules 13 have high withstand voltage, reduced on-state voltage, and high switching speed, and have the characteristics of energy saving, convenience in installation and maintenance, stability in heat dissipation, and the like, thereby being beneficial to practical use.

Specifically, referring to fig. 3, three main terminals 14 are provided, and the main terminals 14 are arranged in a horizontal and equidistant manner, so that the IGBT chip 15 processes the collected circuit data and reacts to the control information of the control unit, and the switching sensitivity is high, which facilitates the adjustment of the circuit by the user and is beneficial to the practical use.

The working principle is as follows: firstly checking the tightness of the device, and by arranging a three-phase rectifier bridge module 11 and a current inductor 10, the device is provided with the three-phase rectifier bridge module 11 at one side of the current inductor 10, the three-phase rectifier bridge module 11 consists of a recovery diode chip and a high-voltage thyristor chip, the recovery diode chip has higher stability compared with a common rectifier diode, the high-voltage thyristor chip is convenient to weld and can reduce connecting circuits, when an inverter unit inverts the main circuit current of a frequency converter, the current inductor 10 can detect the current of the main circuit, so that the device is more stable, then by arranging a first epoxy plate and a 3 second epoxy plate 4, the inverter unit is provided with the first epoxy plate 3 and the second epoxy plate 4 at the middle ends of an IGBT module 13 and a laminated busbar 5, and the first epoxy plate 3 and the second epoxy plate 4 can form an insulation region, be convenient for carry out the installation of IGBT module 13, realize the insulating installation of IGBT, prevent that IGBT module 13 installation process from taking place to electrocute dangerously, improve the security of device, IGBT module 13 is the switching element who is used for the contravariant elementary circuit, and the circuit data of collecting is handled to IGBT chip 15, reacts the control information of the control unit, and the switching sensitivity is high, and the user of being convenient for adjusts the circuit, is favorable to actual use.

Claims

1. An inverter unit for realizing insulated installation of an IGBT (insulated gate bipolar transistor) comprises a first epoxy plate (3), a second epoxy plate (4), a current inductor (10) and a three-phase rectifier bridge module (11), and is characterized in that the second epoxy plate (4) is fixedly connected to the right side of the first epoxy plate (3), the three-phase rectifier bridge module (11) is arranged at the lower end of the second epoxy plate (4), the current inductor (10) is installed on the left side of the three-phase rectifier bridge module (11), the IGBT module (13) is installed at one end of the second epoxy plate (4), a main terminal (14) is fixedly connected to the upper end of the IGBT module (13), and an IGBT chip (15) is installed on one side of the main terminal (14);

the three-phase rectifier bridge module (11) is composed of a recovery diode chip and a high-voltage thyristor chip, and the high-voltage thyristor chip is arranged on one side of the recovery diode chip.

2. The inverter unit for realizing insulated installation of IGBT according to claim 1 is characterized in that a heat sink (1) is installed on one side of the IGBT module (13), a first flat wave capacitor (2) is fixedly installed on the left side of the heat sink (1), and two first flat wave capacitors (2) with the same size are arranged.

3. The inverter unit for realizing insulated installation of IGBT according to claim 2, characterized in that the second smoothing capacitor (12) is fixedly installed on the right side of the heat sink (1), and the first smoothing capacitor (2) and the second smoothing capacitor (12) are arranged in a centrosymmetric distribution.

4. The inverter unit for realizing insulated installation of IGBT according to claim 1, characterized in that the laminated busbar (5) is fixedly installed at the front end of the second epoxy plate (4), a positive plate (6) is arranged at the left side of the front end of the laminated busbar (5), a negative plate (7) is installed at the right side of the positive plate (6), a positive output plate (8) is installed at the right side of the negative plate (7), and a negative output plate (9) is installed at the right side of the positive output plate (8).

5. The inverter unit for realizing insulated installation of IGBT according to claim 3, characterized in that three IGBT modules (13) with the same size are provided, and all IGBT modules (13) are distributed in a transverse direction at equal intervals.

6. The inverter unit for realizing insulated installation of IGBT according to claim 1 is characterized in that there are three main terminals (14), and the main terminals (14) are arranged in a transverse equidistant arrangement.