CN2172483Y - Full inner reflecting semiconductor optic waveguide switch - Google Patents
Full inner reflecting semiconductor optic waveguide switch Download PDFInfo
- Publication number
- CN2172483Y CN2172483Y CN 93247246 CN93247246U CN2172483Y CN 2172483 Y CN2172483 Y CN 2172483Y CN 93247246 CN93247246 CN 93247246 CN 93247246 U CN93247246 U CN 93247246U CN 2172483 Y CN2172483 Y CN 2172483Y
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- China
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- semiconductor
- optical waveguide
- layer
- waveguide switch
- special
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- Expired - Fee Related
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- Optical Integrated Circuits (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The utility model discloses a PIN knot structure in a full inner reflecting semiconductor optic waveguide switch of a cross type. The utility model is epitaxial grown a heterotype epitaxial layer opposite to base materials. The epitaxial layer is on an optical waveguide I layer supported by a semiconductor base. The utility model forms a full epitaxial PIN knot structure. Limit strip frames of a high resistivity are arranged around the heterotype epitaxial layer and the optical waveguide I layer. The structure can completely avoid the deviation of knots to manufacture waste products in the manufacture.
Description
The utility model relates to a kind of chiasma type total internal reflection semiconductor optical waveguide switch, particularly a kind of chiasma type total internal reflection semiconductor optical waveguide switch that adopts extension PIN junction structure.
Existing utilize charge carrier to inject to cause the chiasma type total internal reflection semiconductor optical waveguide switch that to make with filling effect, its profile as shown in Figure 1, it is provided with a vertical PIN knot of being made up of metal upper/lower electrode (7 and 6) and multi-lager semiconductor of narrow strip (1) at the infall of ridge optical waveguide, and the I layer that PIN ties is and intersects ridge optical waveguide and be in conplane semiconductor light wave conducting shell.Regulate the impressed voltage of PIN knot both sides and can regulate the carrier concentration of injecting to the I layer, change with I layer charge carrier implantation concentration, the refractive index of I layer optical waveguide is linear change, just can be to realizing through straight-through end (3) or the control of penetrating through reflection end (4) with this through intersecting the incident light of ridge optical waveguide incident end (2), that is realize the function of optical waveguide switch.
The structure of the PIN knot of existing chiasma type total internal reflection semiconductor optical waveguide switch, be that covering one deck bar is wide less than I layer and the model special-shaped impurity diffusion layer opposite with the semiconductor-based end on the strip optical waveguide I layer that is supported by the semiconductor-based end (5) of amplexiforming metal bottom electrode (6), the upper surface of the special-shaped diffusion layer of strip amplexiforms electrode of metal (7), is in order to limit the semiconductor isolating bar frame that bar is wide and carry out inside and outside isolation with PN junction around it.Such structure often is difficult to the accurately position of control knot in manufacture process, the off normal of knot causes effectively forming can be with filling effect, so that influences the qualification rate of product.
The purpose of this utility model is for overcoming the defective of above-mentioned prior art, designing a kind of chiasma type total internal reflection semiconductor optical waveguide switch that can avoid PIN knot off normal fully.
For realizing that the technical measures that the utility model purpose is taked are, in the PIN of chiasma type total internal reflection semiconductor optical waveguide switch knot, on by the strip semiconductor optical waveguide I layer of the semiconductor-based seat supports of amplexiforming the metal bottom electrode is model and bar tolerance fixed than I layer narrower special shaped doped semiconductor epitaxial layers opposite with the semiconductor-based end, amplexiform electrode of metal at the special-shaped epitaxial loayer upper surface of strip, the qualification bar frame that has the high resistivity semiconductor material to make at the periphery of this special-shaped epitaxial loayer and semiconductor optical waveguide I layer.
The structure that this PIN that covers the semiconductor optical waveguide switch of special-shaped semiconductor epitaxial layers on optical waveguide I layer ties, it makes optical waveguide I layer just in time become charge carrier injection region in the PIN knot, there is not the off normal problem of knot, thereby can significantly improves the qualification rate of product.
Below in conjunction with accompanying drawing and an embodiment the utility model is further described in detail.
Fig. 1 is the schematic appearance of chiasma type total internal reflection semiconductor optical waveguide switch.
Fig. 2 is PIN knot transversal section (AA ' section shown in Fig. 1) structural representation of an embodiment of the utility model chiasma type total internal reflection semiconductor optical waveguide switch.
1 is the PIN knot among the figure, and 2 are the incident end, and 3 are straight-through end, and 4 are the total internal reflection end, and 5 is the semiconductor-based end, and 6 is the metal bottom electrode, and 7 is electrode of metal, and 11 is n
+Type InP substrate, 12 is n type InP cushion, and 13 is epitaxially grown InGaAsP optical waveguide I layer, and 14 is p type InP epitaxial loayer, and 15 is P
+Type InGaAs epitaxial loayer, 10 are high resistivity semiconductor qualification bar frame (oblique line district).
The PIN knot n of an embodiment of the utility model
+Type InP makes substrate (11), is epitaxially grown n type InP cushion (12) on the substrate, and substrate (11) and cushion (12) constitute the semiconductor-based end (5) of PIN knot together.Be close to n
+Type InP substrate (11) lower surface has metal bottom electrode (6).N type InP cushion (12) is gone up and is epitaxially grown strip InGaAsP semiconductor optical waveguide I layer (13), the low-resistivity P that strip p type InP semiconductor epitaxial layers (14) is arranged in the middle top of optical waveguide I layer (13) and superpose thereon
+The surface preparation electrode of metal (7) of type InGaAs epitaxial loayer (15).Periphery at p type InP and InGaAs epitaxial loayer (14 and 15) and strip InGaAsP semiconductor optical waveguide I layer (13) is provided with the high resistivity semiconductor qualification bar frame (10) that injects formation through oxonium ion.
Claims (3)
1, a kind of chiasma type total internal reflection semiconductor optical waveguide switch, it is provided with a vertical PIN knot of being made up of metal upper/lower electrode and multi-lager semiconductor of strip at the infall of ridge optical waveguide, it is characterized in that, in described PIN knot, on by the strip semiconductor optical waveguide I layer of the semiconductor substrate support of amplexiforming the metal bottom electrode is model and bar tolerance fixed than I layer narrower special shaped doped semiconductor epitaxial layers opposite with the semiconductor-based end, upper surface at the special-shaped epitaxial loayer of strip amplexiforms electrode of metal, is provided with the qualification bar frame that makes with the high resistivity semiconductor material at the periphery of this special-shaped epitaxial loayer and semiconductor optical waveguide I layer.
2, according to the described semiconductor optical waveguide switch of claim 1, it is characterized by, the described semiconductor-based end is by n
+Type InP substrate and epitaxially grown n type InP cushion is formed on this substrate, described semiconductor optical waveguide I layer is the InGaAsP semiconductor, described special shaped doped semiconductor epitaxial layers be by epitaxially grown p type InP layer on described semiconductor I layer and on this InP layer epitaxially grown low-resistivity P
+Type InGaAs epitaxial loayer is formed.
3, according to the described optical waveguide switch of claim 1, it is characterized by, the qualification bar frame that described high resistivity semiconductor material makes is to inject the high resistivity semiconductor district that forms by oxonium ion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93247246 CN2172483Y (en) | 1993-12-15 | 1993-12-15 | Full inner reflecting semiconductor optic waveguide switch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93247246 CN2172483Y (en) | 1993-12-15 | 1993-12-15 | Full inner reflecting semiconductor optic waveguide switch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2172483Y true CN2172483Y (en) | 1994-07-20 |
Family
ID=33819692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93247246 Expired - Fee Related CN2172483Y (en) | 1993-12-15 | 1993-12-15 | Full inner reflecting semiconductor optic waveguide switch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2172483Y (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662456A (en) * | 2012-09-25 | 2015-05-27 | 韩国科学技术院 | Optical device using semiconductor |
-
1993
- 1993-12-15 CN CN 93247246 patent/CN2172483Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662456A (en) * | 2012-09-25 | 2015-05-27 | 韩国科学技术院 | Optical device using semiconductor |
| CN104662456B (en) * | 2012-09-25 | 2018-10-12 | 韩国科学技术院 | Use the optical device of semiconductor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |