CN217159697U

CN217159697U - High-integration radio frequency front-end chip for base station and radio frequency front-end for base station

Info

Publication number: CN217159697U
Application number: CN202221233716.2U
Authority: CN
Inventors: 李凡龙
Original assignee: Shaoxing Yuanfang Semiconductor Co Ltd
Current assignee: Shaoxing Yuanfang Semiconductor Co Ltd
Priority date: 2022-05-23
Filing date: 2022-05-23
Publication date: 2022-08-09
Anticipated expiration: 2032-05-23

Abstract

The utility model relates to a base station is with high integrated radio frequency front end chip and base station is with radio frequency front end, and the base station includes with high integrated radio frequency front end chip: the base station antenna comprises an input port and an output port, wherein a radio frequency signal from the base station antenna is sent to a feedback channel of the transceiver through the output port; the amplifier is used for amplifying the radio frequency signal; a first radio frequency switch connected to the input port for switchably connecting to the amplifier and the load element; the second radio frequency switch is connected with the output port and used for being switchably connected with the amplifier and the transmitting channel, the first radio frequency switch is connected with the first end of the amplifier, and a first feedback detection channel is established when the second radio frequency switch is connected with the second end of the amplifier; the first radio frequency switch is connected with the load element, and when the second radio frequency switch is connected with the transmitting channel, a second feedback detection channel is established. The utility model discloses be favorable to reducing the cost of radio frequency front end for the basic station.

Description

High-integration radio frequency front-end chip for base station and radio frequency front-end for base station

Technical Field

The utility model relates to a wireless communication field, in particular to base station is with high integrated radio frequency front end chip and base station is with radio frequency front end.

Background

With the advent of the 5G communication era, the construction of 5G networks becomes more and more important, wherein 5G base stations are an indispensable ring for the construction of 5G networks. Because the 5G frequency is high, the loss is large during long-distance transmission, and energy loss is easily caused by obstacles, the construction of a 5G network not only needs the construction of a macro base station, but also needs a large number of micro base stations for networking.

In the structure of the micro base station, the radio frequency front end is an important component, and comprises a transceiver, a transmitting channel and a receiving channel, wherein the transmitting channel is used for transmitting radio frequency signals to the base station antenna, and the receiving channel is used for receiving the radio frequency signals from the base station antenna and transmitting the radio frequency signals to the transceiver for sampling processing. In order to detect various data of the radio frequency signal transmitted in the transmitting channel, such as the transmitting power, the reflected power and some digital algorithm functions, it is necessary to establish a feedback detection channel between the transmitting channel and the feedback channel of the transceiver and between the receiving channel and the feedback channel of the transceiver, so that the radio frequency signal transmitted in the transmitting channel is transmitted to the feedback channel and detected.

However, the overall size and cost of the rf front end in the current base station is large.

SUMMERY OF THE UTILITY MODEL

The utility model provides a base station is with high integrated radio frequency front end chip and base station is with radio frequency front end is favorable to improving the great and higher problem of cost of the radio frequency front end overall dimension in the present base station at least.

In order to solve the technical problem, the utility model provides a high integrated radio frequency front end chip is used to basic station, include: the base station comprises an input port and an output port, wherein the input port is used for receiving a radio frequency signal from a base station antenna, and the radio frequency signal is sent to a feedback channel of a transceiver through the output port; the amplifier is used for amplifying the radio-frequency signal transmitted by the input port; the first end of the first radio frequency switch is connected to the input port, and the second end of the first radio frequency switch is used for being switchably connected with the first end of the amplifier and the load element; a second rf switch, a first end of the second rf switch being connected to the output port, a second end of the second rf switch being for switchable connection with the second end of the amplifier and the rf signal transmission channel, the first and second rf switches being configured to: when the first radio frequency switch is switched to be connected with the first end of the amplifier and the second radio frequency switch is switched to be connected with the second end of the amplifier, a first feedback detection channel is established; and when the first radio frequency switch is switched to be connected with the load element and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established.

In addition, still include: the bare chip, the amplifier, the first radio frequency switch and the second radio frequency switch are integrated on the same bare chip.

In addition, still include: the interconnected dies, the amplifier, the first radio frequency switch and the second radio frequency switch are integrated on the interconnected dies.

In addition, the number of the bare chips is 2, the first radio frequency switch and the amplifier are integrated on one bare chip, and the second radio frequency switch is integrated on the other bare chip.

In addition, the number of the bare chips is 3, and the first radio frequency switch, the amplifier and the second radio frequency switch are respectively integrated on the 3 bare chips.

In addition, still include: and the packaging structure wraps the bare chip.

In addition, the first radio frequency switch is a single-pole double-throw switch.

In addition, the second radio frequency switch is a single-pole double-throw switch.

In addition, the second radio frequency switch includes: the radio frequency signal transmitting device comprises a plurality of signal output ends and a plurality of signal input ends, wherein each signal output end is correspondingly connected with a feedback channel in the transceiver, and each signal input end is switchably connected with an amplifier and a radio frequency signal transmitting channel, the number of the signal output ends is M, the number of the signal input ends is N, M is more than 1, and N is more than 1.

Correspondingly, the utility model also provides a radio frequency front end for basic station, include: the base station comprises a base station antenna, a transceiver, a receiving channel and a transmitting channel, wherein the receiving channel comprises any one of the base station high-integration radio frequency front-end chips; the transceiver is in communication connection with the base station antenna through a receiving channel and comprises a plurality of feedback channels, and the feedback channels are used for detecting to-be-detected data corresponding to the radio-frequency signals transmitted through the transmitting channels; a first end of the second rf switch is connected to a feedback channel in the transceiver, a second end of the second rf switch switches connections to the transmit channel and the receive channel, the second rf switch and the first rf switch are configured to: when the first radio frequency switch is switched to be connected with the receiving channel and the second radio frequency switch is switched to be connected with the receiving channel, a first feedback detection channel is established between the receiving channel and the feedback channel; when the first radio frequency switch is switched to be connected with an external element outside the receiving channel and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established between the transmitting channel and the feedback channel.

The utility model provides a technical scheme has following advantage at least:

the utility model provides an among the technical scheme of high integrated radio frequency front end chip for basic station, integrated amplifier, first radio frequency switch, second radio frequency switch on radio frequency front end chip. The first end of the first radio frequency switch is connected with the input port of the radio frequency front-end chip, and the second end of the first radio frequency switch is used for switching connection of the amplifier and the load element; the first end of the second radio frequency switch is connected with the output port of the radio frequency front-end chip, and the second end of the second radio frequency switch is switchably connected with the amplifier and an external radio frequency signal transmitting channel, so that when the second radio frequency switch and the first radio frequency switch are switched to be connected with the amplifier, the radio frequency signal can be received, the input port is connected with the feedback channel of the transceiver to form a first feedback detection channel, and the reflected power of the radio frequency signal is checked; when the second radio frequency switch is connected with an external radio frequency signal transmitting channel and the first radio frequency switch is connected with the load element, the radio frequency signal in the transmitting channel is transmitted to the first end of the second radio frequency switch through the second end of the second radio frequency switch and is transmitted to the feedback channel of the transceiver through the output port to form a second feedback detection channel for detecting the transmitting power of the radio frequency signal. That is to say, through switching the connected mode of first radio frequency switch and second radio frequency switch, can form different transfer path to radio frequency signal to establish a plurality of feedback detection channels, so, can save outside one-out-of-five switch, need not to carry out independent encapsulation for outside one-out-of-five switch, under the circumstances of the encapsulation size of not increasing current radio frequency front end chip, greatly reduced the area and the cost of radio frequency front end.

Drawings

One or more embodiments are illustrated by corresponding figures in the drawings, which are not to be construed as limiting the embodiments, unless expressly stated otherwise, and the drawings are not to scale.

FIG. 1 is a schematic diagram of an RF front end;

FIG. 2 is a schematic diagram of a circuit connection of a radio frequency front end;

fig. 3 is a schematic structural diagram of a high integrated radio frequency front end chip for a base station according to an embodiment of the present invention;

fig. 4 is a schematic diagram of a circuit connection for forming a first feedback detection channel corresponding to a high integrated radio frequency front-end chip for a base station according to an embodiment of the present invention;

fig. 5 is a schematic diagram of another circuit connection for forming a first feedback detection channel corresponding to a high integrated radio frequency front-end chip for a base station according to an embodiment of the present invention;

fig. 6 is a schematic diagram of a circuit connection for forming a second feedback detection channel corresponding to a high-integration rf front-end chip for a base station according to an embodiment of the present invention;

fig. 7 is a schematic diagram of a circuit connection of another high-integration rf front-end chip for a base station according to an embodiment of the present invention for forming a rf signal receiving channel;

fig. 8 is a schematic diagram of a circuit connection of another high-integration rf front-end chip for a base station according to an embodiment of the present invention for forming a first feedback detection channel;

fig. 9 is a schematic diagram of a circuit connection of another high-integration rf front-end chip for a base station according to an embodiment of the present invention for forming a second feedback detection channel;

fig. 10 is a schematic circuit connection diagram of a radio frequency front end for a base station according to another embodiment of the present invention.

Detailed Description

As can be seen from the background art, the current rf front-end equipment has a large overall size and a high cost.

Analysis shows that one of the reasons that the current rf front-end device has a large overall size and a high cost is because, at present, the rf front-end device includes an rf front-end chip, and the rf front-end chip is located in a receiving channel and is used for receiving an rf signal from a base station and sending the rf signal to a transceiver. In the process of transmitting radio frequency signals, various data detection is required, such as transmission power, reflection power and some digital algorithm functions, the detection of the data needs to be performed in a feedback channel of a transceiver, and since one transmission channel needs to perform the detection of a plurality of different data, a plurality of feedback detection channels need to be established between a radio frequency front-end chip and the feedback channel of the transceiver, so that the detection of the plurality of data is performed one by one. Currently, when a plurality of feedback detection channels are established, a one-out-of-five switch or a one-out-of-four switch is usually arranged outside a radio frequency front end chip.

Specifically, referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a radio frequency front end; fig. 2 is a schematic circuit diagram of an rf front end. Taking an example of a one-of-five switch 10 for detecting the transmission power and the reflected power of two transmission channels, the one-of-five switch includes 5 input terminals and an output terminal, and the output terminal is switchably connected to the 5 input terminals. The radio frequency front-end equipment comprises: a base station antenna, a transmit path, a receive path, and a transceiver 11. The transmission channel comprises: a preamplifier 12 and a power amplifier 13, wherein a first end of the power amplifier 13 is used for receiving radio frequency signals, and a second end of the power amplifier 13 is used for outputting radio frequency signals. The receiving channel includes a radio frequency front end chip 14 and a filter 15, the radio frequency front end chip 14 includes: an amplifier 16 and a radio frequency switch 17, a first terminal of the radio frequency switch 17 is used for receiving a radio frequency signal, and a second terminal of the radio frequency switch 17 is used for switchably connecting with a receiving channel and a transmitting channel. The transmitting channel, the receiving channel and the base station antenna are connected through a circulator 18, so that the transmission path of the radio frequency signal is as follows: transmitting the data to a base station antenna by a transmitting channel; transmitted by the base station antenna to the receive path. Specifically, a first terminal of the circulator 18 is connected to the base station antenna, a second terminal of the circulator 18 is connected to a first terminal of the radio frequency switch 17, and a third terminal of the circulator 18 is connected to a first terminal of the power amplifier 13 in the transmission channel.

Specific connection schematic diagram of the rf front end, reference may be made to fig. 2, where the rf front end in fig. 2 only shows 4 transmit channels and 4 receive channels, and actually, for a 5G base station, there may be 64 transmit channels and 64 receive channels. The 4 transmit channels are respectively noted as: the transmit channel TX1, the transmit channel TX2, the transmit channel TX3, and the transmit channel TX4, the 4 receive channels are respectively recorded as: a receive path RX1, a receive path RX2, a receive path RX3, and a receive path RX 4. The transceiver includes a receiving channel ADC1, a receiving channel ADC3, a feedback channel ADC2, and a feedback channel ADC 4. Here, the transmit channel TX1, the transmit channel TX2, the receive channel RX1, and the receive channel RX2 are taken as examples for explanation.

The number of input terminals in the one-of-five switch 10 is 5, where the input terminal 1 is connected to the second terminal of the rf switch of the receiving channel RX1, the input terminal 2 is connected to the second terminal of the power amplifier 13 of the transmitting channel TX1, the input terminal 3 is connected to the amplifier of the receiving channel RX2, the input terminal 4 is connected to the second terminal of the rf switch of the transmitting channel TX2, and the input terminal 5 is connected to the first terminal of the power amplifier of the transmitting channel TX 2.

Specifically, the principle of forming different feedback detection channels in the rf front end to detect the transmission power and the reflected power of the rf signal transmitted in the transmission channel TX1 and the transmission channel TX2 is as follows:

during the rf signal receiving phase, the second terminal of the rf switch 17 in the receiving channel RX1 is connected to the first terminal of the amplifier 16, so as to connect the base station antenna with the receiving channel RX1, and the receiving channel RX1 receives the rf signal from the base station antenna and transmits the rf signal to the receiving channel ADC1 of the transceiver 11 for sampling.

In the phase of transmitting the rf signal, the TX1 receives the rf signal from the transceiver 11 and transmits the rf signal to the base station antenna, because the input terminal 2 of the one-out-of-five switch 10 is connected to the second terminal of the power amplifier 13 of the TX1, when the output terminal of the one-out-of-five switch 10 is switched to be connected to the input terminal 2, the rf signal transmitted in the TX1 is transmitted to the output terminal of the one-out-of-five switch 10 through the input terminal 2 and transmitted from the output terminal of the one-out-of-five switch 10 to the feedback channel ADC2 of the transceiver 11, and the detection of the transmission power FWD1 corresponding to the TX1 is performed, so as to form the feedback detection channel of the transmission power FWD 1. It is noted that the feedback detection channel of the transmit power FWD1 may also be used to detect Digital pre-distortion (DPD) data of the rf signal.

When the rf signal transmitted in the transmitting channel TX1 is transmitted to the base station antenna through the circulator 18, due to the damage of part of the base station antenna, etc., part of the rf signal is reflected back through the circulator 18, and the reflected rf signal is transmitted from the first end of the circulator 18 to the second end of the circulator 18 based on the characteristics of the circulator 18, at this time, the second end of the rf switch 17 in the receiving channel RX1 is switched to be connected to the input terminal 1 of the one-out-of-five switch, and the second end of the rf switch in the receiving channel RX1 is connected to the input terminal 1 of the one-out-of-five switch. Therefore, the reflected rf signal is transmitted to the second terminal of the rf switch 17 through the second terminal of the circulator 18, then transmitted to the input terminal 1 of the one-of-five switch 10 through the second terminal of the rf switch 17, and transmitted to the feedback channel ADC2 of the transceiver 11 through the output terminal of the one-of-five switch 10, so as to perform detection on the reflected power REV1 corresponding to the transmission channel TX1, thereby forming a feedback detection channel of the reflected power REV 1.

The input terminal 3 of the one-of-five switch 10 is connected to the receiving channel RX2, and in the rf signal receiving phase, the second terminal of the rf switch 17 in the receiving channel RX2 is connected to the first terminal of the amplifier 16, so as to connect the base station antenna with the receiving channel RX2, and the receiving channel RX2 receives the rf signal from the base station antenna and transmits the rf signal to the feedback channel ADC2 of the transceiver 11 for sampling, that is, the feedback channel ADC2 in the transceiver 11 can be used as both the feedback channel and the receiving channel, and samples the received rf signal of the receiving channel RX 2.

The detection of the transmission power and the reflected power of the radio frequency signal of the transmission channel TX2 by the one-out-of-five switch 10 has the same principle as the detection of the transmission power and the reflected power of the radio frequency signal of the transmission channel TX1 by the one-out-of-five switch 10.

Specifically, in the radio frequency signal transmission phase, when the transmission power FWD2 of the radio frequency signal transmitted in the transmission channel TX2 is detected, the output end of the one-out-of-five switch 10 is switched to be connected with the input end 5.

When the reflected power REV2 of the rf signal transmitted in the transmitting channel TX2 is detected, the second terminal of the rf switch in the receiving channel RX2 is switched to be connected to the input terminal 4 of the one-of-five switch 10.

From the above analysis, 1 one-of-five switch 10 is used to detect the transmission power and the reflected power of two transmission channels, and 32 one-of-five switches are required for the 64T64R transceiver antenna commonly used in 5G. Since the one-of-five switch 10 is separately disposed in the receiving channel, it needs to be separately packaged with the rf front-end chip 14 (refer to fig. 1), which occupies a relatively large space, thereby increasing the area and cost of the rf front-end device.

The inventor finds that, in the current radio frequency front end chip, besides the area occupied by the radio frequency switch and the amplifier, more available space exists, based on which, the utility model provides a high integration radio frequency front end chip for a base station, which integrates the amplifier, a first radio frequency switch and a second radio frequency switch on the radio frequency front end chip, wherein, the first end of the first radio frequency switch is connected with the input port of the radio frequency front end chip, and the second end is used for switching the connection of the amplifier and the load element; the first end of the second radio frequency switch is connected with the output port of the radio frequency front-end chip, and the second end of the second radio frequency switch is connected with the amplifier and an external radio frequency signal transmitting channel in a switchable manner, so that when the second radio frequency switch and the first radio frequency switch are switched to be connected with the amplifier, radio frequency signals can be received, and the input port is connected with a feedback channel of the transceiver to form a first feedback detection channel; when the second rf switch is connected to an external rf signal transmission channel and the first rf switch is connected to the load element, the rf signal in the transmission channel is transmitted to the first end of the second rf switch via the second end of the second rf switch, and the rf signal is transmitted to the feedback channel of the transceiver via the output port, thereby forming a second feedback detection channel. That is to say, through switching the connected mode of first radio frequency switch and second radio frequency switch, can form different transfer path to radio frequency signal to establish a plurality of feedback detection channels, so, can save outside one-out-of-five switch, need not to carry out independent encapsulation for outside one-out-of-five switch, under the circumstances of the encapsulation size of not increasing current radio frequency front end chip, greatly reduced the area and the cost of radio frequency front end.

Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the various embodiments of the invention, numerous technical details are set forth in order to provide a better understanding of the invention. However, the claimed invention can be practiced without these specific details and with various changes and modifications based on the following embodiments.

Fig. 3 is a structural schematic diagram of a base station with high integrated radio frequency front end chip that embodiment provides, fig. 4 is the utility model relates to a base station with high integrated radio frequency front end chip is used for forming a circuit connection schematic diagram that first feedback test channel corresponds that embodiment provides, fig. 5 is the utility model relates to an embodiment provides a base station with high integrated radio frequency front end chip is used for forming another kind of circuit connection schematic diagram that first feedback test channel corresponds, fig. 6 is the utility model relates to a base station with high integrated radio frequency front end chip is used for forming the circuit connection schematic diagram that second feedback test channel corresponds that embodiment provides.

Referring to fig. 3 to 6, the high integrated rf front end chip for a base station includes: the base station comprises an input port and an output port, wherein the input port is used for receiving a radio frequency signal from a base station antenna, and the radio frequency signal is sent to a feedback channel of a transceiver through the output port; an amplifier 103, wherein the amplifier 103 is used for amplifying the radio frequency signal transmitted through the input port; a first rf switch 104, a first terminal of the first rf switch 104 is connected to the input port, and a second terminal of the first rf switch 104 is configured to be switchably connected to the first terminal of the amplifier 103 and the load element; a second rf switch 105, a first terminal of the second rf switch 105 is connected to the output port, a second terminal of the second rf switch 105 is used for switchably connecting with a second terminal of the amplifier 103 and the rf signal transmission channel, the first rf switch 104 and the second rf switch 105 are configured to: when the first rf switch 104 is switched to connect with the first end of the amplifier 103 and the second rf switch 105 is switched to connect with the second end of the amplifier 103, a first feedback detection channel is established; when the first rf switch 104 is switched to connect with the load element and the second rf switch 105 is switched to connect with the transmit channel, a second feedback detection channel is established.

The base station is used for providing wireless communication signals, such as radio frequency signals, for devices such as mobile phones, the base station antenna is one of the constituent devices of the base station, and is used for receiving the radio frequency signals transmitted by the devices such as the mobile phones and transmitting the radio frequency signals to the radio frequency front end for processing, and is also used for transmitting the processed radio frequency signals to the devices such as the mobile phones, so that wireless communication is completed. The utility model provides a high integrated radio frequency front end chip is applied to basic station radio frequency front end for the construction cost greatly reduced of basic station. Specifically, the utility model provides a high integrated radio frequency front end chip has integrateed first radio frequency switch 104, second radio frequency switch 105 and amplifier 103 in, when second radio frequency switch 105 and first radio frequency switch 104 all switch over to be connected with amplifier 103, can carry out the receipt of radio frequency signal, simultaneously, form first feedback detection channel, first feedback detection channel can be used to detect radio frequency signal's reflected power; when the second rf switch 105 is connected to the rf signal transmission channel and the first rf switch 104 is connected to the load element 106, a second feedback detection channel is formed, and the second feedback detection channel can be used for detecting the transmission power of the rf signal. That is, by integrating the first rf switch 104 and the second rf switch 105 in the highly integrated rf front-end chip, a one-of-five switch for forming a plurality of feedback detection paths in the rf front-end chip can be omitted, so that an independent package for an external one-of-five switch is not required. Because the existing high-integration radio frequency front-end chip has more available space, the second radio frequency switch 105 is integrated by utilizing the redundant space in the existing high-integration radio frequency front-end chip, so that the area and the cost of the radio frequency front end are greatly reduced under the condition of not increasing the packaging size of the existing radio frequency front-end chip.

The input port may be used for connecting to a base station antenna for receiving radio frequency signals from the base station antenna, and in particular, the input port may establish a communication connection with the base station antenna through the circulator 107. The output port may be used for connection with the transceiver 101 for transmitting radio frequency signals into the feedback channel 20 of the transceiver 101, including but not limited to: a 2G signal, a 3G signal, a 4G signal, or a 5G signal. The first end of the first rf switch 104 is connected to the input port, when the second end of the first rf switch 104 is switched to be connected to the first end of the amplifier 103 and the second end of the second rf switch 105 is switched to be connected to the second end of the amplifier 103, the amplifier 103 is connected to the input port through the first rf switch 104 and is connected to the output port through the second rf switch 105, thereby forming a channel for receiving the rf signal, the rf signal received through the input port is transmitted to the output port through the first rf switch 104, the amplifier 103 and the second rf switch 105, and the rf signal is transmitted to the receiving channel of the transceiver 101 through the output port for sampling processing. It is noted that in some embodiments, the feedback channel 20 and the receiving channel in the transceiver 101 may be multiplexed, that is, the feedback channel 20 in the transceiver 101 may also be used as a receiving channel for a radio frequency signal to perform sampling processing on the radio frequency signal.

In some embodiments, the first rf switch 104 may be a single-pole double-throw switch, that is, the first rf switch 104 is an alternative switch, the first terminal of the first rf switch 104 includes 1 input terminal a connected to the input port for receiving the rf signal, and the second terminal of the first rf switch 104 includes 2 output terminals, wherein the output terminal b is connected to the load element 106, and the output terminal c is connected to the first terminal of the amplifier 103, so that when the input terminal a of the first rf switch 104 switches to connect with the 2 output terminals, switchable connection with the amplifier 103 and the load element 106 is achieved.

In some embodiments, the second rf switch 105 is a single-pole double-throw switch, that is, the second rf switch 105 is a two-way switch, the first end of the second rf switch 105 includes 1 output terminal d connected to the output port for transmitting the rf signal to the feedback channel 20 of the transceiver 101, and the second end of the second rf switch 105 includes 2 input terminals, where the input terminal e is connected to the transmission channel and the input terminal f is connected to the second end of the amplifier 103. When the output d of the second radio frequency switch 105 switches the connection to the 2 inputs, a switchable connection to the amplifier 103 and the transmit channel is achieved. It should be noted that when the first terminal of the second rf switch 105 only includes 1 output terminal d, it can only be connected to the feedback channel 20 in the transceiver 101, and for the transceiver 101 to normally receive the rf signal from the base station antenna, the feedback channel 20 in the transceiver 101 connected to the output terminal d of the second rf switch 105 is configured to be multiplexed with the receive channel, that is, the feedback channel 20 in the transceiver 101 can be used to detect the rf signal in the transmit channel and normally receive and sample the rf signal from the base station antenna.

Specifically, when the first rf switch 104 and the second rf switch 105 are both single-pole double-throw switches, the specific manner of switching the connection between the first rf switch 104 and the second rf switch 105 to form the first feedback detection channel and the second feedback detection channel is as follows:

referring to fig. 4, in some embodiments, when forming the first feedback detection channel: the input end a of the first rf switch 104 is switched to be connected with the output end c, i.e. to be connected with the first end of the amplifier 103, and the output end d of the second rf switch 105 is switched to be connected with the input end f, i.e. to be connected with the second end of the amplifier 103, so as to connect the input port, the amplifier 103 and the output port to form an rf signal transmission channel. It can be understood that, since the input port receives the rf signal from the base station antenna, the formed first feedback detection channel can also be used as an rf signal receiving channel to perform a normal rf signal receiving procedure. The first feedback detection channel may be used to perform detection of reflected power of the radio frequency signal. Specifically, when the radio frequency signal transmitted by the transmission channel is transmitted to the base station antenna, due to the fact that part of the base station antenna may be damaged, the transmitted part of the radio frequency signal is reflected back, and the reflected radio frequency signal is received by the input port and is transmitted to the transceiver 101 through the output port. That is, the transmission path of the reflected rf signal is multiplexed with the normal rf signal receiving channel, so the first feedback detection channel can transmit the reflected rf signal to the feedback channel 20 of the transceiver 101 for detection.

Referring to fig. 5, in other embodiments, forming the first feedback detection channel: the input a of the first rf switch 104 is switched to be connected to the output b, i.e. to the load element 106, and the output d of the second rf switch 105 is switched to be connected to the input f, i.e. to the second terminal of the amplifier 103. When the reflected rf signal passes through the first rf switch 104 and is transmitted to the load element 106, due to the coupling degree of the first rf switch 104, a part of the rf signal passing through the first rf switch 104 is transmitted from the output terminal c to the amplifier 103, and after the rf signal passes through the gain of the amplifier 103, the rf signal is transmitted to the feedback channel 20 in the transceiver 101 for detection.

Referring to fig. 6, a second feedback detection channel is formed: the input a of the first rf switch 104 is switched to connect with the output b, i.e. to connect with the load element 106, and the output d of the second rf switch 105 is switched to connect with the input e, i.e. to connect with the transmit channel. Since the first rf switch 104 is switched to connect with the load element 106, the path from the input port to the amplifier 103 is cut off, and the first feedback detection channel does not work. The transmission path of the radio frequency signal is as follows: the signal is transmitted from the transmission channel to the input terminal f of the second rf switch 105 to the output terminal d of the second rf switch 105 to the output port, and then is transmitted to the feedback channel 20 of the transceiver 101 via the output port. That is, the rf signal transmitted in the second feedback detection channel is the actually transmitted rf signal from the transmission channel, so the second feedback detection channel can be used to detect the transmission power and digital predistortion of the rf signal.

It should be noted that when the second feedback detection channel is formed, the first rf switch 104 is switched to be connected to the load element 106, so that on one hand, the first feedback detection channel does not operate, and on the other hand, the load element 106 plays a role of voltage stabilization protection to prevent the first feedback detection channel from being broken down and failing. In some embodiments, the load element 106 may be a resistor.

Fig. 7 is a schematic diagram of a circuit connection of another high-integration rf front-end chip for a base station according to an embodiment of the present invention for forming a rf signal receiving channel; fig. 8 is a schematic diagram of a circuit connection of another high-integration rf front-end chip for a base station according to an embodiment of the present invention for forming a first feedback detection channel; fig. 9 is a schematic diagram of a circuit connection of another high-integration rf front-end chip for a base station according to an embodiment of the present invention for forming a second feedback detection channel.

Referring to fig. 7-9, in other embodiments, the second rf switch 105 may include: a plurality of output terminals and a plurality of input terminals, the plurality of output terminals are used for correspondingly connecting with the feedback channel 20 and the receiving channel in the transceiver 101, the input terminals are used for switchably connecting with the amplifier 103 and the radio frequency signal transmitting channel, wherein the number of the output terminals is M, the number of the input terminals is N, M > 1, N > 1. Since the second rf switch 105 has a plurality of output terminals, a plurality of output terminals can be set to be respectively connected to the feedback channel 20 and the receiving channel 21 in the transceiver 101, and when normal rf signal reception is required, the second rf switch 105 is switched to be connected to the receiving channel 21 in the transceiver 101, so as to complete normal sampling of the rf signal from the base station antenna. When the data of the radio frequency signal transmitted by the transmitting channel needs to be detected, the second radio frequency switch 105 is switched to be connected with the feedback channel 20 in the transceiver 101, so that the detection of the data of the radio frequency signal is realized. That is, the type of the second rf switch 105 may be adjusted based on the type of the transceiver 101, so that the base station may implement switching of multiple feedback detection channels with a high integrated rf front-end chip.

Specifically, taking M as 2 and N as 2 as an example, the second rf switch 105 has 2 input terminals and 2 output terminals, which are: input g, input h, output i, and output j. Where input g is connected to the second terminal of the amplifier 103, input h is connected to the transmit channel, output i is connected to the receive channel 21 of the transceiver 101, and output j is connected to the feedback channel 20 of the transceiver 101.

Referring to fig. 7, when normal radio frequency signal reception is performed: the input g of the second rf switch 105 is switched to be connected to the output i, i.e. the first terminal of the second rf switch 105 is connected to the receive channel 21 of the transceiver 101 and the second terminal of the second rf switch 105 is connected to the second terminal of the amplifier 103. At the same time, the input a of the first rf switch 104 is connected to the output c, i.e. the first rf switch 104 is switched to connect to the first terminal of the amplifier 103, thereby forming a rf signal receiving channel between the base station antenna and the receiving channel 21 of the transceiver 101.

When detecting the radio frequency signal transmitted by the transmitting channel, the connection mode for forming the first feedback detection channel is as follows:

referring to fig. 8, the input terminal g of the second rf switch 105 is switched to be connected to the output terminal j, i.e. the first terminal of the second rf switch 105 is connected to the feedback channel 20 of the transceiver 101 and the second terminal of the second rf switch 105 is connected to the second terminal of the amplifier 103. The input a of the first rf switch 104 is connected to the output b, i.e. the first rf switch 104 is switched to connect with the amplifier 103. Thereby forming a first feedback detection channel between the base station antenna and the receive channel of the transceiver 101.

Referring to fig. 9, the second feedback detection channel is formed in the following connection manner:

the input h of the second rf switch 105 is switched to be connected to the output j, i.e. the first terminal of the second rf switch 105 is connected to the feedback channel 20 of the transceiver 101 and the second terminal of the second rf switch 105 is connected to the transmit channel. At the same time, the input a of the first rf switch 104 is connected to the output b, i.e. the first rf switch 104 is switched to connect with the load element 106, thereby forming a second feedback detection channel between the transmit channel and the feedback channel 20 of the transceiver 101.

The Amplifier 103 amplifies the radio frequency signal received by the input port, in some embodiments, the Amplifier 103 may be a Low Noise Amplifier (LNA), which may reduce Noise interference and improve the sensitivity of the radio frequency front-end chip when receiving the radio frequency signal; on the other hand, the radio frequency signal from the base station antenna can be amplified, and the normal work of the radio frequency front end of the base station is ensured. In some embodiments, in order to increase the amplification factor of the radio frequency signal to meet the requirement, the number of the amplifiers 103 may be set to be plural, so as to constitute a multistage amplifier, for example, may be 2 or more.

With continued reference to fig. 3, in some embodiments, further comprising: the die, the amplifier 103, the first rf switch 104 and the second rf switch 105 are integrated on the same die. The bare chip referred to here is a bare chip that has not undergone packaging processing, that is, the utility model provides a high-integration radio frequency front-end chip for base station is a bare chip that has undergone packaging processing. The first rf switch 104, the second rf switch 105 and the amplifier 103 are integrated on the same die, and compared with the case where the first rf switch 104, the second rf switch 105 and the amplifier 103 are integrated on different dies, on one hand, the design of the interconnection lines between different dies can be omitted, the loss of electrical connection can be reduced, and the assembly process can be simplified. On the other hand, since the first rf switch 104, the second rf switch 105 and the amplifier 103 are all integrated on the same die, only an input port and an output port need to be arranged on the die, and since a die interconnection structure does not need to be designed, an extra space can be used for integrating the second rf switch 105, so that the use space of the die is maximally utilized, and after the die is packaged, the size of the prepared rf front-end chip is further reduced. Therefore, after the radio frequency front-end chip is applied to the radio frequency front-end for the base station, a five-to-one switch used at present can be omitted, namely, the five-to-one switch does not need to be additionally packaged, and therefore the area and the cost of the radio frequency front-end for the base station are greatly reduced.

In other embodiments, further comprising: the interconnected dies, the amplifier 103, the first radio frequency switch 104 and the second radio frequency switch 105 are integrated on the interconnected dies. It is understood that the amplifier 103, the first rf switch 104 and the second rf switch 105 are integrated on a plurality of interconnected dies, and the amplifier 103, the first rf switch 104 and the second rf switch 105 are distributed on the plurality of interconnected dies, and the amplifier 103, the first rf switch 104 and the second rf switch 105 are integrated on the distributed dies. In consideration of the process difficulty of actually manufacturing a highly integrated rf front-end chip, the amplifier 103, the first rf switch 104, and the second rf switch 105 are integrated on a plurality of dies, so that the process difficulty can be reduced. Specifically, the two dies can be electrically connected through an interconnected interface, so that the amplifier 103, the first radio frequency switch 104 and the second radio frequency switch 105 are connected.

Specifically, in some embodiments, the number of dies is 2, the first rf switch 104 and the amplifier 103 are integrated on one die, and the second rf switch 105 is integrated on another die. In other embodiments, the first rf switch 104 may be integrated on one of the dies, and the amplifier 103 and the second rf switch 105 may be integrated on the other die.

In other embodiments, the number of dies is 3, and the first rf switch 104, the amplifier 103, and the second rf switch 105 are integrated on 3 dies respectively. Thus, the process difficulty can be further reduced.

It is understood that in some embodiments, a highly integrated rf front-end chip may include only: 1

first rf switch

104, 1

amplifier

103 and 1 second rf switch 105, thereby forming a path for receiving rf signals. In other embodiments, a highly integrated rf front-end chip may also include a plurality of: the first rf switch 104, the amplifier 103, and the second rf switch 105 are connected in the same relationship, so as to form a plurality of independent paths for receiving rf signals, and the independent paths are respectively used to form a first feedback detection channel and a second feedback detection channel, for example, 2 feedback detection channels, for the rf signals transmitted by different transmission channels, so as to reduce the number of rf front-end chips used in the rf front-end for the base station, thereby further reducing the area and cost of the rf front-end for the base station. The plurality of first rf switches 104, the amplifier 103, and the second rf switch 105 may be integrated on the same die or different dies.

In some embodiments, further comprising: and the packaging structure wraps the bare chip. No matter first radio frequency switch 104, amplifier 103 and second radio frequency switch 105 are integrated on same die, still are integrated on a plurality of dies, all including by the cladding of same packaging structure to constitute the utility model provides a high integrated radio frequency front end chip is used to basic station. Compare in the needs among the prior art independently encapsulate to an outside five select a switch, the utility model provides a technical scheme only increases second radio frequency switch 105 in the present existing radio frequency front end chip, not only can realize carrying out the detection of various data to the radio frequency signal in the transmission channel, can also integrate second radio frequency switch 105 in the present radio frequency front end chip to be encapsulated together. Namely, under the condition that the radio frequency front end has normal functions, independent packaging of an external one-of-five switch is omitted, the packaging size of the current radio frequency front end chip is kept unchanged, the area of the radio frequency front end is reduced, and the packaging cost is greatly reduced. Specifically, in some embodiments, the package structure may include a package substrate bonded to the die and a package film encapsulating the die and the first rf switch 104, the second rf switch 105, and the amplifier 103 integrated on the die. The package substrate may be a rigid package substrate, such as any one of a polymer substrate, a composite substrate, or a ceramic substrate. The package substrate may be a flexible package substrate, and a material of the flexible package substrate may be any one of PI (Polyimide) resin or PE (polyethylene) resin.

Correspondingly, another embodiment of the present invention further provides a radio frequency front end for base station, specifically refer to 10, fig. 10 is the utility model discloses a circuit connection schematic diagram of radio frequency front end for base station that another embodiment provides, radio frequency front end for base station includes: the base station comprises a base station antenna, a transceiver, a receiving channel and a transmitting channel, wherein the receiving channel comprises a high-integration radio frequency front-end chip for the base station provided by the previous embodiment; the transceiver is in communication connection with the base station antenna through a receiving channel and comprises a plurality of feedback channels, and the feedback channels are used for detecting to-be-detected data corresponding to the radio-frequency signals transmitted through the transmitting channels; a first terminal of the second rf switch 105 is connected to a feedback channel in the transceiver, a second terminal of the second rf switch 105 switches the connection to the transmit channel and the receive channel, the second rf switch 105 and the first rf switch 104 are configured to: when the first rf switch 104 is switched to connect with the receiving channel and the second rf switch 105 is switched to connect with the receiving channel, a first feedback detection channel is established between the receiving channel and the feedback channel; when the first rf switch 104 is switched to connect with an external element other than the receiving channel and the second rf switch 105 is switched to connect with the transmitting channel, a second feedback detection channel is established between the transmitting channel and the feedback channel.

The high-integration radio frequency front-end chip is located in the receiving channel, and when the first radio frequency switch 104 in the high-integration radio frequency front-end chip is switched to be connected with the first end of the amplifier 103 and the second radio frequency switch 105 is switched to be connected with the second end of the amplifier 103, a receiving channel for transmitting the radio frequency signal from the base station antenna can be formed at the input port and the output port, so that the receiving channel can normally receive the radio frequency signal.

The transmit path includes a power amplifier 108 for amplifying the signal transmitted by the transmit path so that the rf signal reaches a sufficient rf power and is fed to the base station antenna. A first terminal of the power amplifier 108 is configured to receive a radio frequency signal, and a second terminal of the power amplifier 108 is configured to output the radio frequency signal.

The feedback channel 20 in the transceiver 101 may detect data to be detected corresponding to the radio frequency signal transmitted by the transmission channel, for example, data such as transmission power, reflection power, and digital predistortion of the radio frequency signal. Specifically, the transmission power of the radio frequency signal refers to the power of the radio frequency signal transmitted by the transmission channel after being processed by the power amplifier 108 in the transmission channel; the reflected power refers to power corresponding to a part of radio frequency signals reflected back in the process that the radio frequency signals transmitted by the transmitting channel are fed to the base station antenna.

The transmission channel, the reception channel, and the base station antenna are connected by a circulator 107, so that the transmission path of the radio frequency signal is: transmitting the data to a base station antenna by a transmitting channel; transmitted by the base station antenna to the receive path. Specifically, a first end of the circulator 107 is connected to the base station antenna, a second end of the circulator 107 is connected to the input port, and a third end of the circulator 107 is connected to a first end of the power amplifier 108 in the transmission path.

Specifically, use first radio frequency switch 104 and second radio frequency switch 105 to be single-pole double-throw switch as an example, the utility model discloses the principle that the radio frequency signal that another embodiment provided for the base station carries out radio frequency signal's normal receipt and corresponds transmission power, reflected power and digital predistortion data via the radio frequency signal of transmission channel transmission is as follows:

the first terminal of the first rf switch 104 includes 1 input terminal a connected to the second terminal of the circulator 107 for receiving the rf signal from the base station antenna, and the second terminal of the first rf switch 104 includes 2 output terminals, wherein the output terminal c is connected to the first terminal of the amplifier 103, and the output terminal b is connected to the load element 106, so that when the input terminal a of the first rf switch 104 is switched to connect with the 2 output terminals, the switchable connection with the amplifier 103 and the load element 106 is realized. The first terminal of the second radio frequency switch 105 comprises 1 output terminal d connected in the feedback channel 20 of the transceiver 101 and the second terminal of the second radio frequency switch 105 comprises 2 input terminals, wherein the input terminal f is connected to the second terminal of the amplifier 103 and the input terminal e is connected to the second terminal of the power amplifier 108 in the transmit channel.

When the receiving channel is in operation, the input end a of the first rf switch 104 is switched to be connected with the output end c, that is, to be connected with the first end of the amplifier 103, the output end d of the second rf switch 105 is switched to be connected with the input end f, that is, to be connected with the second end of the amplifier 103, and the circulator 107 is communicated with the receiving channel, the receiving channel is communicated with the feedback channel 20 in the transceiver 101, the feedback channel 20 is multiplexed with the receiving channel, and the rf signal from the base station antenna can be transmitted to the feedback channel 20 in the transceiver 101 through the receiving channel for sampling processing. In some embodiments, the receiving channel further includes a filter 109, and the filter 109 is configured to filter the rf signal received by the receiving channel, and the filtered rf signal is transmitted to the feedback channel 20 in the transceiver 101 for sampling. In other embodiments, when the number of the output terminals of the second rf switch 105 is greater than 1, the output terminals of the second rf switch 105 may be connected to the feedback channel 20 and the receiving channel in the transceiver 101, respectively.

Detecting the transmitting power and the digital predistortion: the input end a of the first rf switch 104 is switched to be connected with the output end b, i.e. switched to be connected with the load element 106, the output end d of the second rf switch 105 is switched to be connected with the input end e, i.e. switched to be connected with the second end of the power amplifier 108 in the transmitting channel, so as to form a first feedback detection channel, and the receiving channel does not work. The transmission path of the radio frequency signal is as follows: the rf signal amplified by the power amplifier 108 in the transmitting channel is transmitted to the input end e of the second rf switch 105, and then transmitted to the feedback channel 20 of the transceiver 101 through the output end d of the second rf switch 105, so as to detect the transmitting power and the digital predistortion of the rf signal.

In some embodiments, when detecting the reflected power, the circuit connection relationship of the rf front end for the base station may be: the input end a of the first rf switch 104 is switched to be connected with the output end c, i.e. switched to be connected with the first end of the amplifier 103, and the output end d of the second rf switch 105 is switched to be connected with the input end f, i.e. switched to be connected with the second end of the amplifier 103, so as to form a first feedback detection channel. The first feedback detection channel is connected to the same as the receiving channel in normal operation because: when the rf signal transmitted in the transmitting channel is transmitted to the base station antenna through the circulator 107, due to the damage of a part of the base station antenna, etc., a part of the rf signal is reflected back through the circulator 107, and based on the characteristics of the circulator 107, the reflected rf signal can be transmitted only from the first end of the circulator 107 to the second end of the circulator 107, that is, the path along which the reflected rf signal is transmitted is the same as the path along which the receiving channel normally receives the rf signal from the base station antenna.

In other embodiments, when detecting the reflected power, the circuit connection relationship of the radio frequency front end used by the base station may also be: the input a of the first rf switch 104 is switched to be connected to the output b, i.e. to the load element 106, and the output d of the second rf switch 105 is switched to be connected to the input f, i.e. to the second terminal of the amplifier 103. When the reflected rf signal passes through the first rf switch 104 and is transmitted to the load element 106, due to the coupling degree of the first rf switch 104, a part of the rf signal passing through the first rf switch 104 is transmitted from the output terminal c to the amplifier 103, and after the rf signal passes through the gain of the amplifier 103, the rf signal is transmitted to the feedback channel 20 in the transceiver 101 for detection.

In the radio frequency front end for a base station provided in the foregoing embodiment, the first radio frequency switch 104, the amplifier 103, and the second radio frequency switch 105 are integrated in the same radio frequency front end chip to form a highly integrated radio frequency front end chip, when the chip is applied to a radio frequency front end, the first feedback detection channel and the second feedback detection channel can be formed by switching the connection modes of the first radio frequency switch 104 and the second radio frequency switch 105, and the formed first feedback detection channel can also be used as a normal receiving channel for a radio frequency signal from an antenna of the base station. Therefore, a one-out-of-five switch independently packaged in the current radio frequency front end can be omitted, independent packaging for an external one-out-of-five switch is not needed, and the area and the cost of the radio frequency front end are greatly reduced under the condition that the packaging size of a current radio frequency front end chip is not increased.

It will be understood by those skilled in the art that the foregoing embodiments are specific examples of the invention, and that various changes in form and details may be made therein without departing from the spirit and scope of the invention in its practical application. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

1. A high integrated radio frequency front end chip for a base station, comprising:

an input port for receiving a radio frequency signal from a base station antenna and an output port via which the radio frequency signal is sent to a feedback channel of a transceiver;

an amplifier for amplifying the radio frequency signal transmitted through the input port;

a first rf switch having a first terminal connected to the input port and a second terminal for switchably connecting to the first terminal of the amplifier and a load element;

a second RF switch having a first terminal connected to the output port and a second terminal for switchably connecting to the second terminal of the amplifier and to an RF signal transmit path, the first and second RF switches configured to: when the first radio frequency switch is switched to be connected with the first end of the amplifier and the second radio frequency switch is switched to be connected with the second end of the amplifier, a first feedback detection channel is established; and when the first radio frequency switch is switched to be connected with the load element and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established.

2. The highly integrated radio frequency front end chip for a base station according to claim 1, further comprising: a die, the amplifier, the first radio frequency switch, and the second radio frequency switch being integrated on the same die.

3. The highly integrated radio frequency front end chip for a base station according to claim 1, further comprising: an interconnected plurality of dies, the amplifier, the first radio frequency switch, and the second radio frequency switch being integrated on the interconnected plurality of dies.

4. The highly integrated radio frequency front end chip for base station according to claim 3, wherein the number of said dies is 2, said first radio frequency switch and said amplifier are integrated on one of said dies, and said second radio frequency switch is integrated on the other of said dies.

5. The highly integrated radio frequency front end chip for base station according to claim 3, wherein the number of the dies is 3, and the first radio frequency switch, the amplifier and the second radio frequency switch are respectively integrated on 3 of the dies.

6. The highly integrated radio frequency front end chip for a base station according to claim 2 or 3, further comprising: a package structure encapsulating the die.

7. The highly integrated radio frequency front end chip for a base station according to claim 1, wherein the first radio frequency switch is a single-pole double-throw switch.

8. The highly integrated radio frequency front end chip for a base station according to claim 1 or 7, wherein the second radio frequency switch is a single-pole double-throw switch.

9. The highly integrated radio frequency front end chip for base station according to claim 1 or 7, wherein said second radio frequency switch comprises: the radio frequency signal transmitting device comprises a plurality of signal output ends and a plurality of signal input ends, wherein each signal output end is correspondingly connected with a feedback channel in the transceiver, the signal input ends are switchably connected with the amplifier and the radio frequency signal transmitting channel, the number of the signal output ends is M, the number of the signal input ends is N, M is more than 1, and N is more than 1.

10. A radio frequency front end for a base station, comprising a base station antenna, a transceiver, a receiving channel and a transmitting channel, wherein the receiving channel comprises the high integrated radio frequency front end chip for the base station of any one of claims 1 to 9;

the transceiver is in communication connection with the base station antenna through the receiving channel, and comprises a plurality of feedback channels, wherein the feedback channels are used for detecting to-be-detected data corresponding to the radio-frequency signals transmitted through the transmitting channel;

a first terminal of the second radio frequency switch is connected to a feedback channel in the transceiver, a second terminal of the second radio frequency switch switches connections to the transmit channel and the receive channel, the second radio frequency switch and the first radio frequency switch are configured to: when the first radio frequency switch is switched to be connected with the receiving channel and the second radio frequency switch is switched to be connected with the receiving channel, a first feedback detection channel is established between the receiving channel and the feedback channel; and when the first radio frequency switch is switched to be connected with an external element outside the receiving channel and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established between the transmitting channel and the feedback channel.