CN101599744A - The high-power bilateral amplifier of tdd mode - Google Patents
The high-power bilateral amplifier of tdd mode Download PDFInfo
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- CN101599744A CN101599744A CNA200810038530XA CN200810038530A CN101599744A CN 101599744 A CN101599744 A CN 101599744A CN A200810038530X A CNA200810038530X A CN A200810038530XA CN 200810038530 A CN200810038530 A CN 200810038530A CN 101599744 A CN101599744 A CN 101599744A
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- noise amplifier
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Abstract
A kind of high-power bilateral amplifier of tdd mode comprises power amplifier, circulator, low noise amplifier, it is characterized in that: at single-pole double-throw switch (SPDT) of input adjunction of low noise amplifier.When the power amplifier working time slot, single-pole double-throw switch (SPDT) switches to the mesh power load, makes the power output of power amplifier lead to transmitting antenna by circulator and gets on; When the low noise amplifier working time slot; single-pole double-throw switch (SPDT) switches to low noise amplifier; the small-signal of antenna input is directly amplified by low noise amplifier; like this; both protected the low noise amplifier circuit of small-signal; can not cause power output to cause extra distortion because of the problem of switch power capacity again, and the power of loss be much smaller compared with the circuit of direct employing switch switching.Adopt high-isolation to get single-pole double-throw switch (SPDT), avoided power amplifier output power to leak and cause the damage of low noise amplifier.
Description
[technical field]
The present invention is relevant with the power amplifier that the TD-SCDMA radio communication base station uses, and specifically, is a kind of high-power bilateral amplifier of tdd mode.
[background technology]
Although the signal modulation system that various communication systems adopt is not quite similar,, the branch of tdd mode and fdd mode is arranged from the duplex communication pattern that adopts.In tdd mode, the power amplifier that use the base station not only needs to export high-power, and must not damage the function of low noise receiving circuit.Use the tdd mode amplifier at present, generally adopt integrated single-pole double-throw switch (SPDT) to carry out the switch operating of transmission circuit, also have and adopt passive ferrite circulator to make the transmitting-receiving buffer circuit to satisfy the switching of mode of operation.The former circuit is simple, but because the semiconductor module Power Limitation can only be exported very little linear power, can not satisfy the high-power requirement of output of base station; The ferrite circulator that the latter adopts makes the high-power transmitting antenna of directly receiving of output, and reliability is higher, and linear index is good, power capacity is big, but because the isolation of itself is limited, low noise amplifier directly connects circulator, can cause low noise amplifier to damage.
[summary of the invention]
The objective of the invention is to use circulator and linear high power integrated switch to combine, be designed to the reception of tdd mode and launch high buffer circuit, satisfy the requirement that low noise receives requirement and the output of linear high power simultaneously, the final microwave high power amplifier of realizing the TDD mode, and it is stably worked.
Technical scheme of the present invention is: a kind of high-power bilateral amplifier of tdd mode, comprise power amplifier, circulator, low noise amplifier, and it is characterized in that: at single-pole double-throw switch (SPDT) of input adjunction of low noise amplifier.
Such scheme is further, is connected to isolator between power amplifier and the circulator; Input and output at low noise amplifier are connected to capacitance respectively; Be connected to capacitance between single-pole double-throw switch (SPDT) and the mesh power load; Single-pole double-throw switch (SPDT) is connected to the feed filter capacitor.
Single-pole double-throw switch (SPDT) adopts existing linear high power integrated switch among the present invention, plays the effect of commutation circuit.When the power amplifier working time slot, single-pole double-throw switch (SPDT) switches to the mesh power load, makes the power output of power amplifier lead to transmitting antenna by circulator and gets on.When the low noise amplifier working time slot; single-pole double-throw switch (SPDT) switches to low noise amplifier; the small-signal of antenna input is directly amplified by low noise amplifier; like this; both protected the low noise amplifier circuit of small-signal; can not cause power output to cause extra distortion because of the problem of switch power capacity again, and the power of loss be much smaller compared with the circuit of direct employing switch switching.Owing to get input at low noise amplifier and adopted high-isolation to get single-pole double-throw switch (SPDT), successfully avoided power amplifier output power to leak into that low noise amplifier gets input and the damage of the low noise amplifier that causes.
[description of drawings]
Fig. 1 is the circuit structure block diagram of the embodiment of the invention.
Fig. 2 is the circuit theory diagrams of the embodiment of the invention.
[embodiment]
Be described further below in conjunction with embodiments of the invention and accompanying drawing thereof.
See shown in Figure 1ly, embodiments of the invention comprise power amplifier 1, circulator 2, low noise amplifier 3, and at single-pole double-throw switch (SPDT) 4 of input adjunction of low noise amplifier 3, these devices all are existing products, and the present invention is combined into an integral body with it.Power amplifier 1 is the high-power amplifying circuit that adopts the LDMOS device, low noise amplifier 3 is the receiving circuits that work in the small-signal state, circulator 2 plays the effect of transmitting-receiving separation and has low-loss, high-power characteristic, single-pole double-throw switch (SPDT) 4 adopts linear high power integrated switch 4, plays the effect of commutation circuit between mesh power load 5 and low noise amplifier 3.When power amplifier 1 working time slot, single-pole double-throw switch (SPDT) 4 switches to mesh power load 5, makes the power output of power amplifier 1 lead to transmitting antenna by circulator 2 and gets on.When low noise amplifier 3 working time slots, single-pole double-throw switch (SPDT) 4 switches to low noise amplifier 3, and the small-signal of antenna input is directly amplified by low noise amplifier 3.
See shown in Figure 2ly, connect a link that is connected to circulator 2 behind the isolator 14 from the port one 1 of power amplifier 1 output; Another link of circulator 2 connects a multiplexing port 12, and this multiplexing port 12 is used for power amplifier 1 and exports the input that antenna and antenna input to low noise amplifier 3 to; The RFC end that is connected to single-pole double-throw switch (SPDT) 4 behind capacitance C4801 of another link serial connection of circulator 2 is No. 3 pin, and capacitance C4801 is the capacitance of low noise amplifier 3 inputs; The RF1 end of single-pole double-throw switch (SPDT) 4 is the output port 13 that is connected to low noise amplifier behind capacitance C4802 of No. 5 pin serial connections; The RF2 end of single-pole double-throw switch (SPDT) 4 i.e. No. 8 pin is connected in series capacitance C4803, mesh power load 5 back ground connection; The Vdd end of single-pole double-throw switch (SPDT) 4 i.e. No. 4 pin meets three feed filter capacitor C4804, C4805 and C4806, implements low frequency, intermediate frequency and High frequency filter respectively; No. 1, No. 2 pin of single-pole double-throw switch (SPDT) 4 are PA_SWD-and PA_SWD+ signal end, other numbers pin ground connection of single-pole double-throw switch (SPDT) 4.With upper member is existing components and parts, and the present invention utilizes various Devices Characteristics to form the input and output duplicate circuitry of a tdd mode high-power bilateral amplifier.
When PA_SWD-is " 0 ", when PA_SWD+ was " 1 ", single-pole double-throw switch (SPDT) 4 worked in the power amplifier state, connected mesh power load 5 and circulator 2, and low noise amplifier 3 is cut off, and has played protective effect; When PA_SWD-is " 1 ", when PA_SWD+ was " 0 ", single-pole double-throw switch (SPDT) 4 worked in low noise amplifier 3 states, connected low noise amplifier 3 and circulator 2.Low noise amplifier 3 work, received signal is amplified back output through low noise amplifier 3.
Claims (5)
1, a kind of high-power bilateral amplifier of tdd mode comprises power amplifier, circulator, low noise amplifier, it is characterized in that: at single-pole double-throw switch (SPDT) of input adjunction of low noise amplifier.
2, the high-power bilateral amplifier of tdd mode according to claim 1 is characterized in that: be connected to isolator between power amplifier and the circulator.
3, the high-power bilateral amplifier of tdd mode according to claim 1 is characterized in that: input and output at low noise amplifier are connected to capacitance respectively.
4, the high-power bilateral amplifier of tdd mode according to claim 1 is characterized in that: be connected to capacitance between single-pole double-throw switch (SPDT) and the mesh power load.
5, the high-power bilateral amplifier of tdd mode according to claim 1 is characterized in that: single-pole double-throw switch (SPDT) is connected to the feed filter capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810038530XA CN101599744A (en) | 2008-06-04 | 2008-06-04 | The high-power bilateral amplifier of tdd mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810038530XA CN101599744A (en) | 2008-06-04 | 2008-06-04 | The high-power bilateral amplifier of tdd mode |
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| Publication Number | Publication Date |
|---|---|
| CN101599744A true CN101599744A (en) | 2009-12-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CNA200810038530XA Pending CN101599744A (en) | 2008-06-04 | 2008-06-04 | The high-power bilateral amplifier of tdd mode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935265A (en) * | 2015-06-10 | 2015-09-23 | 泉州市捷高电子技术有限公司 | Bidirectional amplifier circuit based on TDD working mode |
| CN106358252A (en) * | 2016-09-13 | 2017-01-25 | 宇龙计算机通信科技(深圳)有限公司 | Multilevel LNA (low-noise amplifier) switching control method and device |
| CN110601661A (en) * | 2019-09-06 | 2019-12-20 | 电子科技大学 | CMOS millimeter wave active quasi-circulator |
| CN113447894A (en) * | 2021-06-24 | 2021-09-28 | 中国人民解放军国防科技大学 | Rotman lens based electromagnetic pseudoform load |
-
2008
- 2008-06-04 CN CNA200810038530XA patent/CN101599744A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104935265A (en) * | 2015-06-10 | 2015-09-23 | 泉州市捷高电子技术有限公司 | Bidirectional amplifier circuit based on TDD working mode |
| CN106358252A (en) * | 2016-09-13 | 2017-01-25 | 宇龙计算机通信科技(深圳)有限公司 | Multilevel LNA (low-noise amplifier) switching control method and device |
| CN106358252B (en) * | 2016-09-13 | 2021-08-17 | 宇龙计算机通信科技(深圳)有限公司 | Switching control method and switching control device for multi-stage LNA |
| CN110601661A (en) * | 2019-09-06 | 2019-12-20 | 电子科技大学 | CMOS millimeter wave active quasi-circulator |
| CN110601661B (en) * | 2019-09-06 | 2023-03-24 | 电子科技大学 | CMOS millimeter wave active quasi-circulator |
| CN113447894A (en) * | 2021-06-24 | 2021-09-28 | 中国人民解放军国防科技大学 | Rotman lens based electromagnetic pseudoform load |
| CN113447894B (en) * | 2021-06-24 | 2022-09-20 | 中国人民解放军国防科技大学 | Rotman lens based electromagnetic pseudoform load |
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| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20091209 |