CN114629523A - High-integration radio frequency front-end chip and radio frequency front-end for base station - Google Patents

High-integration radio frequency front-end chip and radio frequency front-end for base station Download PDF

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Publication number
CN114629523A
CN114629523A CN202210518323.4A CN202210518323A CN114629523A CN 114629523 A CN114629523 A CN 114629523A CN 202210518323 A CN202210518323 A CN 202210518323A CN 114629523 A CN114629523 A CN 114629523A
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China
Prior art keywords
radio frequency
switch
channel
amplifier
feedback
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CN202210518323.4A
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Chinese (zh)
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李凡龙
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Shaoxing Yuanfang Semiconductor Co Ltd
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Shaoxing Yuanfang Semiconductor Co Ltd
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Priority to CN202210518323.4A priority Critical patent/CN114629523A/en
Publication of CN114629523A publication Critical patent/CN114629523A/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/401—Circuits for selecting or indicating operating mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0064—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with separate antennas for the more than one band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/0404—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas the mobile station comprising multiple antennas, e.g. to provide uplink diversity

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Transceivers (AREA)

Abstract

The embodiment of the application relates to a high integrated radio frequency front end chip and radio frequency front end for base station, and the high integrated radio frequency front end chip includes: the base station antenna comprises an input port and an output port, wherein a radio frequency signal from the base station antenna is sent to a feedback channel of the transceiver through the output port; the amplifier is used for amplifying the radio frequency signal; the filter is used for filtering the radio frequency signal; a first radio frequency switch connected to the input port for switchably connecting to the first terminal of the amplifier and the load element; the second radio frequency switch is connected with the output port and used for being switchably connected with the second end of the amplifier and the transmitting channel, and when the first radio frequency switch is connected with the first end of the amplifier and the second radio frequency switch is connected with the second end of the amplifier, a first feedback detection channel is established; when the first radio frequency switch load element is connected and the second radio frequency switch is connected with the transmitting channel, a second feedback detection channel is established. The embodiment of the application is beneficial to reducing the cost of the radio frequency front end for the base station.

Description

High-integration radio frequency front-end chip and radio frequency front-end for base station
Technical Field
The embodiment of the application relates to the field of wireless communication, in particular to a high-integration radio frequency front-end chip and a radio frequency front-end for a base station.
Background
With the advent of the 5G communication era, the construction of 5G networks becomes more and more important, wherein 5G base stations are an indispensable ring for the construction of 5G networks. Because the 5G frequency is high, the loss is large during long-distance transmission, and energy loss is easily caused by obstacles, the construction of a 5G network not only needs the construction of a macro base station, but also needs a large number of micro base stations for networking.
In the structure of the micro base station, the radio frequency front end is an important component, and comprises a transceiver, a transmitting channel and a receiving channel, wherein the transmitting channel is used for transmitting radio frequency signals to the base station antenna, and the receiving channel is used for receiving the radio frequency signals from the base station antenna and transmitting the radio frequency signals to the transceiver for sampling processing. In order to detect various data of the radio frequency signal transmitted in the transmitting channel, such as the transmitting power, the reflected power and some digital algorithm functions, it is necessary to establish a feedback detection channel between the transmitting channel and the feedback channel of the transceiver and between the receiving channel and the feedback channel of the transceiver, so that the radio frequency signal transmitted in the transmitting channel is transmitted to the feedback channel and detected.
However, there are problems that the overall size of the rf front end in the base station is large and the cost is high.
Disclosure of Invention
The embodiment of the application provides a highly integrated radio frequency front end chip and a radio frequency front end for a base station, which are at least beneficial to improving the problems of larger overall size and higher cost of the radio frequency front end in the current base station.
In order to solve the above technical problem, an embodiment of the present application provides a highly integrated rf front-end chip, including: the high integrated radio frequency front end chip includes: the base station comprises an input port and an output port, wherein the input port is used for receiving a radio frequency signal from a base station antenna, and the radio frequency signal is sent to a feedback channel of a transceiver through the output port; the amplifier is used for amplifying the radio-frequency signal transmitted by the input port; the filter is used for filtering the radio frequency signal transmitted by the input port; the first end of the first radio frequency switch is connected to the input port, and the second end of the first radio frequency switch is used for being switchably connected with the first end of the amplifier and the load element; a second rf switch, a first end of the second rf switch being connected to the output port, a second end of the second rf switch being for switchable connection with the second end of the amplifier and an external rf signal transmission channel, the first and second rf switches being configured to: when the first radio frequency switch is switched to be connected with the first end of the amplifier and the second radio frequency switch is switched to be connected with the second end of the amplifier, a first feedback detection channel is established; and when the first radio frequency switch is switched to be connected with the load element and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established.
In addition, still include: the bare chip, the amplifier, the filter, the first radio frequency switch and the second radio frequency switch are integrated on the same bare chip.
In addition, still include: and the amplifier and the first radio frequency switch are integrated on one of the two dies, and the filter and the second radio frequency switch are integrated on the other die.
In addition, still include: and the packaging structure wraps the bare chip.
In addition, the first radio frequency switch is a single-pole double-throw switch.
In addition, the second radio frequency switch is a single-pole double-throw switch.
In addition, the second radio frequency switch includes: the transceiver comprises a plurality of output ends and a plurality of input ends, wherein the output ends are correspondingly connected with a feedback channel and a receiving channel in the transceiver, the input ends are switchably connected with an amplifier and a radio frequency signal transmitting channel, the number of the output ends is M, the number of the input ends is N, M is more than 1, and N is more than 1.
In addition, the first end of the filter is connected to the second end of the amplifier, and the second end of the filter is connected to the second end of the second radio frequency switch.
In addition, the first end of the filter is connected to the second end of the first radio frequency switch, and the second end of the filter is connected to the first end of the amplifier.
Correspondingly, an embodiment of the present application further provides a radio frequency front end for a base station, including: the base station comprises a base station antenna, a transceiver, a receiving channel and a transmitting channel, wherein the receiving channel comprises any one of the high-integration radio frequency front-end chips; the transceiver is in communication connection with the base station antenna through a receiving channel and comprises a plurality of feedback channels, and the feedback channels are used for detecting to-be-detected data corresponding to the radio-frequency signals transmitted through the transmitting channels; the first end of the second radio frequency switch is connected with a feedback channel in the transceiver, the second end of the second radio frequency switch switches the connection with the transmitting channel and the receiving channel, and the second radio frequency switch and the first radio frequency switch are configured to: when the first radio frequency switch is switched to be connected with the receiving channel and the second radio frequency switch is switched to be connected with the receiving channel, a first feedback detection channel is established between the receiving channel and the feedback channel; when the first radio frequency switch is switched to be connected with the load element and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established between the transmitting channel and the feedback channel.
The technical scheme provided by the embodiment of the application has at least the following advantages:
in the technical scheme of the highly-integrated radio frequency front-end chip provided by the embodiment of the application, an amplifier, a first radio frequency switch, a second radio frequency switch and a filter are integrated on the radio frequency front-end chip, wherein a first end of the first radio frequency switch is connected with an input port of the radio frequency front-end chip, and a second end of the first radio frequency switch is used for switching connection between the amplifier and a load element; the first end of the second radio frequency switch is connected with the output port of the radio frequency front-end chip, and the second end of the second radio frequency switch is switchably connected with the amplifier and an external radio frequency signal transmitting channel, so that when the second radio frequency switch and the first radio frequency switch are switched to be connected with the amplifier, the radio frequency signal can be received, the input port is connected with the feedback channel of the transceiver to form a first feedback detection channel, and the reflected power of the radio frequency signal is detected; when the second radio frequency switch is connected with an external radio frequency signal transmitting channel and the first radio frequency switch is connected with the load element, the radio frequency signal in the transmitting channel is transmitted to the first end of the second radio frequency switch through the second end of the second radio frequency switch and is transmitted to the feedback channel of the transceiver through the output port to form a second feedback detection channel for detecting the transmitting power of the radio frequency signal. That is to say, through switching the connected mode of first radio frequency switch and second radio frequency switch, can form different transfer path to radio frequency signal to establish a plurality of feedback detection channels, so, can save outside one-out-of-five switch, need not to carry out independent encapsulation for outside one-out-of-five switch, under the circumstances of the encapsulation size of not increasing current radio frequency front end chip, greatly reduced radio frequency front end's area and cost. In addition, the filter is integrated in the radio frequency front end chip, so that the filter does not need to be independently packaged, and the area and the cost of the radio frequency front end are further reduced.
Drawings
One or more embodiments are illustrated by corresponding figures in the drawings, which are not to be construed as limiting the embodiments, unless expressly stated otherwise, and which are not intended to be limiting in scale.
FIG. 1 is a schematic diagram of an RF front end;
FIG. 2 is a schematic diagram of a circuit connection of a radio frequency front end;
fig. 3 is a schematic structural diagram of a highly integrated rf front-end chip according to an embodiment of the present application;
fig. 4 is a schematic circuit connection diagram of a highly integrated rf front-end chip for forming a first feedback detection channel according to an embodiment of the present application;
fig. 5 is a schematic diagram of another corresponding circuit connection when a highly integrated rf front-end chip is used to form a first feedback detection channel according to an embodiment of the present application;
fig. 6 is a schematic circuit connection diagram of a highly integrated rf front-end chip according to an embodiment of the present application when the highly integrated rf front-end chip is used to form a second feedback detection channel;
fig. 7 is a schematic circuit connection diagram of another highly integrated rf front-end chip according to an embodiment of the present application when the highly integrated rf front-end chip is used to form an rf signal receiving channel;
fig. 8 is a schematic circuit connection diagram of another highly integrated rf front-end chip according to an embodiment of the present application when the highly integrated rf front-end chip is used to form a first feedback detection channel;
fig. 9 is a schematic circuit connection diagram of another highly integrated rf front-end chip according to an embodiment of the present application when the highly integrated rf front-end chip is used to form a second feedback detection channel;
fig. 10 is a schematic structural diagram of another highly integrated rf front-end chip according to an embodiment of the present application;
fig. 11 is a schematic structural diagram of another highly integrated rf front-end chip according to an embodiment of the present application;
fig. 12 is a circuit connection diagram of a radio frequency front end for a base station according to another embodiment of the present application.
Detailed Description
As can be seen from the background art, the conventional rf front end has the problems of large overall size and high cost.
Analysis shows that one of the reasons that the current rf front-end device has a large overall size and a high cost is because, at present, the rf front-end device includes an rf front-end chip, and the rf front-end chip is located in a receiving channel and is used for receiving an rf signal from a base station antenna and sending the rf signal to a transceiver. In the process of transmitting radio frequency signals, various data detection is required, such as detection of transmission power, detection of reflected power and detection of some digital algorithm functions, the detection of the data needs to be performed in a feedback channel of a transceiver, and since the detection of various different data needs to be performed on the radio frequency signals in one transmission channel, a plurality of feedback detection channels need to be established between a radio frequency front-end chip and the feedback channel of the transceiver, so that the detection of various data is performed one by one. Currently, when a plurality of feedback detection channels are established, a one-out-of-five switch or a one-out-of-four switch is usually arranged outside a radio frequency front end chip.
Specifically, referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a radio frequency front end; fig. 2 is a schematic circuit diagram of an rf front end. Taking an example of a one-of-five switch 10 for detecting the transmission power and the reflected power of two transmission channels, the one-of-five switch 10 includes 5 input terminals and an output terminal, and the output terminal is switchably connected to the 5 input terminals. The radio frequency front-end equipment comprises: a base station antenna, a transmit path, a receive path, and a transceiver 11. The transmission channel includes: a preamplifier 12 and a power amplifier 13, wherein a first end of the power amplifier 13 is used for receiving radio frequency signals, and a second end of the power amplifier 13 is used for outputting radio frequency signals. The receiving channel includes a radio frequency front end chip 14 and a filter 15, the radio frequency front end chip 14 includes: an amplifier 16 and a radio frequency switch 17, a first terminal of the radio frequency switch 17 is used for receiving a radio frequency signal, and a second terminal of the radio frequency switch 17 is used for switchably connecting with a receiving channel and a transmitting channel. The transmitting channel, the receiving channel and the base station antenna are connected through a circulator 18, so that the transmission path of the radio frequency signal is as follows: transmitting the data to a base station antenna by a transmitting channel; transmitted by the base station antenna to the receive path. Specifically, a first terminal of the circulator 18 is connected to the base station antenna, a second terminal of the circulator 18 is connected to a first terminal of the radio frequency switch 17, and a third terminal of the circulator 18 is connected to a first terminal of the power amplifier 13 in the transmission channel.
Specific connection schematic diagram of the rf front end, reference may be made to fig. 2, where the rf front end in fig. 2 only shows 4 transmit channels and 4 receive channels, and actually, for a 5G base station, there may be 64 transmit channels and 64 receive channels. The 4 transmit channels are respectively noted as: the transmit channel TX1, the transmit channel TX2, the transmit channel TX3, and the transmit channel TX4, the 4 receive channels are respectively recorded as: a receive path RX1, a receive path RX2, a receive path RX3, and a receive path RX 4. The transceiver includes a receiving channel ADC1, a receiving channel ADC3, a feedback channel ADC2, and a feedback channel ADC 4. Here, the transmit channel TX1, the transmit channel TX2, the receive channel RX1, and the receive channel RX2 are taken as examples for explanation.
Referring to fig. 2, the number of input terminals in the one-out-of-five switch 10 is 5, where input terminal 1 is connected to the second terminal of the rf switch of the receiving channel RX1, input terminal 2 is connected to the second terminal of the power amplifier 13 of the transmitting channel TX1, input terminal 3 is connected to the amplifier of the transmitting channel TX2, input terminal 4 is connected to the second terminal of the rf switch of the transmitting channel TX2, and input terminal 5 is connected to the first terminal of the power amplifier of the transmitting channel TX 2. The output of the one-of-five switch 10 is connected to the feedback channel of the transceiver, and when the input 1, the input 2, the input 3, the input 4, and the input 5 are connected to the output, different paths are formed.
Specifically, the principle of forming different feedback detection channels in the rf front end to detect the transmission power and the reflected power of the rf signal transmitted in the transmission channel TX1 and the transmission channel TX2 is as follows:
during the rf signal receiving phase, the second terminal of the rf switch 17 in the receiving channel RX1 is connected to the first terminal of the amplifier 16, so as to connect the base station antenna with the receiving channel RX1, and the receiving channel RX1 receives the rf signal from the base station antenna and transmits the rf signal to the receiving channel ADC1 of the transceiver 11 for sampling.
In the rf signal transmitting phase, the transmitting channel TX1 receives the rf signal from the transceiver 11 and transmits the rf signal to the base station antenna, since the input terminal 2 of the one-of-five switch 10 is connected to the second terminal of the power amplifier 13 of the transmitting channel TX1, when the output terminal of the one-of-five switch 10 is switched to be connected to the input terminal 2, the rf signal transmitted in the transmitting channel TX1 is transmitted to the output terminal of the one-of-five switch 10 through the input terminal 2 and transmitted to the feedback channel ADC2 of the transceiver 11 from the output terminal of the one-of-five switch 10, and the transmitting power FWD1 corresponding to the transmitting channel TX1 is detected, thereby forming the feedback detection channel of the transmitting power FWD 1. It is noted that the feedback detection channel of the transmit power FWD1 can also be used to detect Digital pre-distortion (DPD) data of the rf signal.
When the rf signal transmitted in the transmitting channel TX1 is transmitted to the base station antenna through the circulator 18, a part of the rf signal is reflected back through the circulator 18 due to a damaged part of the base station antenna, and the reflected rf signal is transmitted from the first end of the circulator 18 to the second end of the circulator 18 based on the characteristics of the circulator 18, at this time, the second end of the rf switch 17 in the receiving channel RX1 is switched to be connected to the input terminal 1 of the one-of-five switch, and the second end of the rf switch in the receiving channel RX1 is connected to the input terminal 1 of the one-of-five switch. Therefore, the reflected rf signal is transmitted to the second terminal of the rf switch 17 through the second terminal of the circulator 18, then transmitted to the input terminal 1 of the one-of-five switch 10 through the second terminal of the rf switch 17, and transmitted to the feedback channel ADC2 of the transceiver 11 through the output terminal of the one-of-five switch 10, so as to perform detection on the reflected power REV1 corresponding to the transmission channel TX1, thereby forming a feedback detection channel of the reflected power REV 1.
The input terminal 3 of the one-of-five switch 10 is connected to the receiving channel RX2, during the rf signal receiving phase, the second terminal of the rf switch 17 in the receiving channel RX2 is connected to the first terminal of the amplifier 16, so as to connect the base station antenna with the receiving channel RX2, and the receiving channel RX2 receives the rf signal from the base station antenna and transmits the rf signal to the feedback channel ADC2 of the transceiver 11 for sampling, that is, the feedback channel ADC2 in the transceiver 11 can be used as both the feedback channel and the receiving channel, and samples the received rf signal of the receiving channel RX 2.
The detection of the transmission power and the reflected power of the radio frequency signal of the transmission channel TX2 by the one-out-of-five switch 10 has the same principle as the detection of the transmission power and the reflected power of the radio frequency signal of the transmission channel TX1 by the one-out-of-five switch 10.
Specifically, in the radio frequency signal transmission phase, when the transmission power FWD2 of the radio frequency signal transmitted in the transmission channel TX2 is detected, the output end of the one-out-of-five switch 10 is switched to be connected with the input end 5.
When the reflected power REV2 of the rf signal transmitted in the transmitting channel TX2 is detected, the second terminal of the rf switch in the receiving channel RX2 is switched to be connected to the input terminal 4 of the one-of-five switch 10.
The principle of detecting the transmission power and the reflected power of the radio frequency signals of the transmission channel TX3 and the transmission channel TX4 is the same as the principle of detecting the transmission power and the reflected power of the radio frequency signals of the transmission channel TX1 and the transmission channel TX2, and is not described in detail below.
From the above analysis, 1 one-of-five switch 10 is used to detect the transmission power and the reflected power of two transmission channels, and 32 one-of-five switches are required for the 64T64R transceiver antenna commonly used in 5G. Since the one-of-five switch 10 is separately disposed in the receiving channel, it needs to be separately packaged with the rf front-end chip 14 (refer to fig. 1), which occupies a relatively large space, thereby increasing the area and cost of the rf front-end device. In addition, referring to fig. 1 and fig. 2, in the receiving channel, a filter 15 is further required to be disposed for performing filtering processing on the received radio frequency signal. For the 64T64R transceiver antenna, 64 filters 15 are required, and since the filters 15 are arranged on a single chip, separate packaging is required, which further increases the area of the rf front end and the manufacturing cost.
The present invention provides a highly integrated radio frequency front-end chip, wherein an amplifier, a first radio frequency switch, a second radio frequency switch and a filter are integrated on the radio frequency front-end chip, wherein a first end of the first radio frequency switch is connected with an input port of the radio frequency front-end chip, and a second end of the first radio frequency switch is used for switching connection of the amplifier and a load element; the first end of the second radio frequency switch is connected with the output port of the radio frequency front-end chip, and the second end of the second radio frequency switch is connected with the amplifier and an external radio frequency signal transmitting channel in a switchable manner, so that when the second radio frequency switch and the first radio frequency switch are switched to be connected with the amplifier, the radio frequency signal can be received, and the input port is connected with the feedback channel of the transceiver to form a first feedback detection channel; when the second rf switch is connected to an external rf signal transmission channel and the first rf switch is connected to the load element, the rf signal in the transmission channel is transmitted to the first end of the second rf switch via the second end of the second rf switch, and the rf signal is transmitted to the feedback channel of the transceiver via the output port, thereby forming a second feedback detection channel. That is to say, through switching the connected mode of first radio frequency switch and second radio frequency switch, can form different transfer path to radio frequency signal to establish a plurality of feedback detection channels, so, can save outside one-out-of-five switch, need not to carry out independent encapsulation for outside one-out-of-five switch, under the circumstances of the encapsulation size of not increasing current radio frequency front end chip, greatly reduced the area and the cost of radio frequency front end. In addition, the filter is integrated in the radio frequency front end chip, so that the filter does not need to be independently packaged, and the area and the cost of the radio frequency front end are further reduced.
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the examples of the present application, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
Fig. 3 is a schematic structural diagram of a high-integrated rf front-end chip according to an embodiment of the present disclosure, fig. 4 is a schematic circuit connection diagram corresponding to the high-integrated rf front-end chip according to an embodiment of the present disclosure when the high-integrated rf front-end chip is used to form a first feedback detection channel, fig. 5 is a schematic circuit connection diagram corresponding to the high-integrated rf front-end chip according to an embodiment of the present disclosure when the high-integrated rf front-end chip is used to form a first feedback detection channel, and fig. 6 is a schematic circuit connection diagram corresponding to the high-integrated rf front-end chip according to an embodiment of the present disclosure when the high-integrated rf front-end chip is used to form a second feedback detection channel.
Referring to fig. 3 to 6, the highly integrated rf front-end chip includes: an input port for receiving a radio frequency signal from a base station antenna and an output port via which the radio frequency signal is sent to the feedback channel 20 of the transceiver 101; an amplifier 103, wherein the amplifier 103 is used for amplifying the radio frequency signal transmitted through the input port; a filter 104, wherein the filter 104 is configured to perform filtering processing on the radio frequency signal transmitted through the input port; a first rf switch 105, a first terminal of the first rf switch 105 is connected to the input port, and a second terminal of the first rf switch 105 is configured to be switchably connected to the first terminal of the amplifier 103 and the load element 106; a second rf switch 107, a first terminal of the second rf switch 107 is connected to the output port, a second terminal of the second rf switch 107 is configured to be switchably connected to a second terminal of the amplifier 103 and an external rf signal transmission channel, the first rf switch 105 and the second rf switch 107 are configured to: when the first rf switch 105 is switched to connect with the first terminal of the amplifier 103 and the second rf switch 107 is switched to connect with the second terminal of the amplifier 103, a first feedback detection channel is established; when the first rf switch 105 is switched to connect with the load element 106 and the second rf switch 107 is switched to connect with the transmit channel, a second feedback detection channel is established.
The base station is used for providing wireless communication signals, such as radio frequency signals, for devices such as mobile phones, the base station antenna is one of the constituent devices of the base station, and is used for receiving the radio frequency signals transmitted by the devices such as the mobile phones and transmitting the radio frequency signals to the radio frequency front end for processing, and is also used for transmitting the processed radio frequency signals to the devices such as the mobile phones, so that wireless communication is completed. The high-integration radio frequency front-end chip provided by the embodiment of the application is applied to the radio frequency front end of the base station, so that the construction cost of the base station is greatly reduced. Specifically, the high-integration rf front-end chip provided in the embodiment of the present application integrates the first rf switch 105, the second rf switch 107, the amplifier 103, and the filter 104, and when the second rf switch 107 and the first rf switch 105 are switched to be connected to the amplifier 103, the rf signal can be received, and meanwhile, a first feedback detection channel is formed, and the first feedback detection channel can be used for detecting the reflected power of the rf signal; when the second rf switch 107 is connected to the rf signal transmission channel and the first rf switch 105 is connected to the load element 106, a second feedback detection channel is formed, and the second feedback detection channel can be used for detecting the transmission power of the rf signal. That is, by integrating the first rf switch 105 and the second rf switch 107 in the highly integrated rf front-end chip, one-of-five switches for forming a plurality of feedback detection paths in the current rf front-end can be omitted, so that there is no need to package the external one-of-five switches separately. Since the current highly integrated rf front-end chip has more available space, the second rf switch 107 and the filter 104 are integrated by using the redundant space in the current highly integrated rf front-end chip, so that the area and cost of the rf front-end chip are greatly reduced without increasing the package size of the current rf front-end chip.
The input port may be used for connecting to a base station antenna to receive a radio frequency signal from the base station antenna, and in particular, the input port may establish a communication connection with the base station antenna through the circulator 108. The output port may be used for connection with the transceiver 101 for transmitting radio frequency signals into the feedback channel 20 of the transceiver 101, including but not limited to: a 2G signal, a 3G signal, a 4G signal, or a 5G signal. The first end of the first rf switch 105 is connected to the input port, when the second end of the first rf switch 105 is switched to be connected to the first end of the amplifier 103 and the second end of the second rf switch 107 is switched to be connected to the second end of the amplifier 103, the amplifier 103 and the filter 104 are connected to the input port through the first rf switch 105 and connected to the output port through the second rf switch 107, thereby forming a channel for receiving the rf signal, the rf signal received through the input port is transmitted to the output port through the first rf switch 105, the amplifier 103, the filter 104 and the second rf switch 107, and the rf signal is transmitted to the receiving channel of the transceiver 101 through the output port for sampling processing. It is noted that in some embodiments, the feedback channel 20 and the receiving channel in the transceiver 101 may be multiplexed, that is, the feedback channel 20 in the transceiver 101 may also be used as a receiving channel for a radio frequency signal to perform sampling processing on the radio frequency signal.
In some embodiments, the first rf switch 105 may be a single-pole double-throw switch, that is, the first rf switch 105 is a two-way switch, the first end of the first rf switch 105 includes 1 input end a connected to the input port for receiving the rf signal, and the second end of the first rf switch 105 includes 2 output ends, which are respectively denoted as output end b and output end c, where the output end b is connected to the load element 106, and the output end c is connected to the first end of the amplifier 103, and when the input end a of the first rf switch 105 switches over the connection with the 2 output ends, the switchable connection with the amplifier 103 and the load element 106 is realized.
In some embodiments, the second rf switch 107 is a single-pole double-throw switch, that is, the second rf switch 107 is an alternative switch, the first terminal of the second rf switch 107 includes 1 output terminal d connected to the output port for transmitting the rf signal into the feedback channel 20 of the transceiver 101, and the second terminal of the second rf switch 107 includes 2 input terminals e and f, respectively, where the input terminal e is connected to the transmission channel, and may be connected to the power amplifier 109 in the transmission channel, and the input terminal f is connected to the second terminal of the amplifier 103. In some embodiments, the connection between the first terminal of the filter 104 and the second terminal of the amplifier 103 may be through the filter 104 connected between the second terminal of the amplifier 103 and the input terminal f. When the output d of the second radio frequency switch 107 switches the connection to the 2 inputs, a switchable connection to the amplifier 103 and the transmit channel is achieved. It is noted that when the first terminal of the second rf switch 107 comprises only 1 output terminal d, it can only be connected to the feedback channel 20 in the transceiver 101, and the feedback channel 20 connected to the output terminal d of the second rf switch 107 in the transceiver 101 is configured to be multiplexed with the receiving channel for normal reception of the rf signal from the base station antenna by the transceiver 101. That is, the feedback channel 20 in the transceiver 101 can be used for both detecting the rf signal in the transmit channel and normally receiving and sampling the rf signal from the base station antenna. That is, the first feedback detection channel, the second feedback detection channel and the radio frequency signal receiving channel can be switched by only switching 2 different connection modes for the second radio frequency switch 107, thereby simplifying the electrical connection of the radio frequency front-end chip.
Specifically, when the first rf switch 105 and the second rf switch 107 are both single-pole double-throw switches, the specific manner of switching the connection between the first rf switch 105 and the second rf switch 107 to form the first feedback detection channel and the second feedback detection channel is as follows:
referring to fig. 4, in some embodiments, when forming the first feedback detection channel: the input terminal a of the first rf switch 105 is switched to be connected with the output terminal c, i.e. to be connected with the first terminal of the amplifier 103, and the output terminal d of the second rf switch 107 is switched to be connected with the input terminal f, i.e. to be connected with the second terminal of the amplifier 103, so as to connect the input port, the amplifier 103, the filter 104 and the output port together to form an rf signal transmission channel. It can be understood that, since the input port receives the rf signal from the base station antenna, when the input end a of the first rf switch 105 is switched to be connected to the output end c and the output end d of the second rf switch 107 is switched to be connected to the input end f, the formed first feedback detection channel can also be used as an rf signal receiving channel to perform the normal rf signal receiving procedure. The first feedback detection channel may be used to perform detection of reflected power of the radio frequency signal. Specifically, when the radio frequency signal transmitted by the transmission channel is transmitted to the base station antenna, due to the fact that part of the base station antenna may be damaged, the transmitted part of the radio frequency signal is reflected back, and the reflected radio frequency signal is received by the input port and is transmitted to the transceiver 101 through the output port. That is, the transmission path of the reflected rf signal is multiplexed with the normal rf signal receiving channel, so the first feedback detection channel can transmit the reflected rf signal to the feedback channel 20 of the transceiver 101 for detection.
Referring to fig. 5, in other embodiments, forming the first feedback detection channel: the input a of the first rf switch 105 may also be switched to connect with the output b, i.e. to connect with the load element 106, and the output d of the second rf switch 107 may also be switched to connect with the input f, i.e. to connect with the second terminal of the amplifier 103. When the reflected rf signal is transmitted to the load element 106 through the first rf switch 105, based on the coupling degree of the first rf switch 105, a part of the rf signal passing through the first rf switch 105 is transmitted to the amplifier 103 from the output terminal c, and after the rf signal passes through the gain of the amplifier 103, the rf signal is transmitted to the feedback channel 20 in the transceiver 101 for detection.
Referring to fig. 6, a second feedback detection channel is formed: the input terminal a of the first rf switch 105 is switched to connect with the output terminal b, i.e. to connect with the load element 106, and the output terminal d of the second rf switch 107 is switched to connect with the input terminal e, i.e. to connect with the transmission channel. Since the first rf switch 105 is switched to connect with the load element 106, the path from the input port to the amplifier 103 is cut off, and at this time, the first feedback detection channel does not work. The transmission path of the radio frequency signal is as follows: the signal is transmitted from the transmission channel to the input e of the second rf switch 107 to the output d of the second rf switch 107 to the output port, and then is sent to the feedback channel 20 of the transceiver 101 via the output port. That is, the rf signal transmitted in the second feedback detection channel is the actually transmitted rf signal from the transmission channel, so the second feedback detection channel can be used to detect the transmission power and digital predistortion of the rf signal.
It should be noted that when the second feedback detection channel is formed, the first rf switch 105 is switched to be connected to the load element 106, so that on one hand, the first feedback detection channel does not operate, and on the other hand, the load element 106 plays a role of voltage stabilization protection to prevent the first feedback detection channel from being broken down and failing. In some embodiments, the load element 106 may be a resistor.
Fig. 7 is a schematic circuit connection diagram of another highly integrated rf front-end chip according to an embodiment of the present application when the highly integrated rf front-end chip is used to form an rf signal receiving channel; fig. 8 is a schematic circuit connection diagram of another highly integrated rf front-end chip according to an embodiment of the present application when the chip is used to form a first feedback detection channel; fig. 9 is a schematic circuit connection diagram of another highly integrated rf front-end chip according to an embodiment of the present application when the highly integrated rf front-end chip is used to form a second feedback detection channel.
Referring to fig. 7-9, in other embodiments, the second rf switch 107 may include: a plurality of output terminals and a plurality of input terminals, the plurality of output terminals are used for being correspondingly connected with the feedback channel 20 and the receiving channel in the transceiver 101, the input terminals are used for being switchably connected with the amplifier 103 and the radio frequency signal transmitting channel, wherein the number of the output terminals is M, the number of the input terminals is N, M is greater than 1, and N is greater than 1. Since the second rf switch 107 has a plurality of output terminals, a plurality of output terminals can be set to be respectively connected to the feedback channel 20 and the receiving channel 21 in the transceiver 101, and when normal rf signal reception is required, the second rf switch 107 is switched to be connected to the receiving channel 21 in the transceiver 101, so as to complete normal sampling of the rf signal from the base station antenna. When the data of the radio frequency signal transmitted by the transmitting channel needs to be detected, the second radio frequency switch 107 is switched to be connected with the feedback channel 20 in the transceiver 101, so that the detection of the data of the radio frequency signal is realized. That is, the type of the second rf switch 107 may be adjusted based on the type of the transceiver 101, so that the highly integrated rf front-end chip provided in the embodiment of the present application may implement switching of multiple feedback detection channels.
Specifically, for example, M is 2 and N is 2, the first terminal of the filter 104 is connected to the second terminal of the amplifier 103, and the second terminal of the filter 104 is switchably connected to the second terminal of the second rf switch 107. The second rf switch 107 has 2 inputs and outputs, which are respectively recorded as: input g, input h, output i, and output j. Where the input g is connected to the second terminal of the filter 104, the input h is connected to the transmit path, the output i is connected to the receive path 21 of the transceiver 101, and the output j is connected to the feedback path 20 of the transceiver 101. In some embodiments, the input terminal g may also be connected to the second terminal of the amplifier 103 when the first terminal of the filter 104 is switchably connected to the second terminal of the first rf switch 105 and the second terminal of the filter 104 is connected to the first terminal of the amplifier 103.
Referring to fig. 7, when normal radio frequency signal reception is performed: the input g of the second rf switch 107 is switched to be connected to the output i, i.e. a first terminal of the second rf switch 107 is connected to the receive channel 21 of the transceiver 101 and a second terminal of the second rf switch 107 is connected to the filter 104. Meanwhile, the input end a of the first rf switch 105 is connected to the output end c, i.e. the first rf switch 105 is switched to connect with the amplifier 103. Thereby forming a radio frequency signal reception path between the base station antenna and the reception path 21 of the transceiver 101.
When detecting the radio frequency signal transmitted by the transmitting channel, the connection mode for forming the first feedback detection channel is as follows:
referring to fig. 8, the input terminal g of the second rf switch 107 is switched to be connected to the output terminal j, i.e. the first terminal of the second rf switch 107 is connected to the feedback channel 20 of the transceiver 101, and the second terminal of the second rf switch 107 is connected to the second terminal of the filter 104. The input a of the first rf switch 105 is connected to the output c, i.e. the first rf switch 105 is switched to connect with the amplifier 103. Thereby forming a first feedback detection channel between the base station antenna and the receive channel of the transceiver 101.
Referring to fig. 9, the connection manner of forming the second feedback detection channel is as follows:
the input h of the second rf switch 107 is switched to be connected to the output j, i.e. the first terminal of the second rf switch 107 is connected to the feedback channel 20 of the transceiver 101, and the second terminal of the second rf switch 107 is connected to the transmit channel, which may be connected to the power amplifier 109 in the transmit channel. At the same time, the input a of the first rf switch 105 is connected to the output b, i.e. the first rf switch 105 is switched to connect with the load element 106, thereby forming a second feedback detection channel between the transmit channel and the feedback channel 20 of the transceiver 101.
With continued reference to fig. 3, the Amplifier 103 amplifies the radio frequency signal received by the input port, in some embodiments, the Amplifier 103 may be a Low Noise Amplifier (LNA), which may reduce Noise interference and improve the sensitivity of the radio frequency front-end chip when receiving the radio frequency signal; on the other hand, the radio frequency signal from the base station antenna can be amplified, and the normal work of the radio frequency front end of the base station is ensured. In some embodiments, in order to increase the amplification factor of the radio frequency signal to meet the requirement, the number of the amplifiers 103 may be set to be plural, so that the multistage amplifiers 103 are configured, for example, 2 or more.
The filter 104 is used for filtering the rf signal from the base station antenna to pass a specific frequency component in the rf signal and greatly attenuate other frequency components, thereby improving the anti-interference and signal-to-noise ratio of the rf signal. The filter 104, the first radio frequency switch 105, the amplifier 103 and the second radio frequency switch 107 are integrated on the same chip, so that the filter 104, the first radio frequency switch 105, the amplifier 103 and the second radio frequency switch 107 can be packaged together, that is, on one hand, independent packaging is not needed, and on the other hand, the filter 104 is not needed to be integrated on an independent chip, so that the area and the cost of a radio frequency front end are greatly reduced under the condition that the packaging size of the current radio frequency front end chip is not increased.
Referring to fig. 3, in some embodiments, a first terminal of the filter 104 is connected to a second terminal of the amplifier 103, and a second terminal of the filter 104 is connected to a second terminal of the second rf switch 107. That is, when the first rf switch 105 and the second rf switch 107 are switched to connect with the amplifier 103, so as to form a channel for receiving the rf signal between the input port and the output port, the transmission path of the rf signal transmitted through the input port is: input port, first radio frequency switch 105, amplifier 103, filter 104, second radio frequency switch 107, output port. That is, after being transmitted through the input port, the rf signal from the base station antenna is transmitted to the amplifier 103 through the first rf switch 105 for amplification, the amplified rf signal is transmitted to the filter 104 for filtering, the filtered rf signal is transmitted to the output port through the second rf switch 107, and then the filtered rf signal is transmitted to the transceiver 101 (refer to fig. 4) through the output port for sampling.
Referring to fig. 10, in other embodiments, a first terminal of the filter 104 is connected to a second terminal of the first rf switch 105, and a second terminal of the filter 104 is connected to a first terminal of the amplifier 103. When the first rf switch 105 and the second rf switch 107 are switched to connect with the amplifier 103, so as to form a channel for receiving the rf signal between the input port and the output port, the transmission path of the rf signal is: input port, first radio frequency switch 105, filter 104, amplifier 103, second radio frequency switch 107, output port. Specifically, after being transmitted through the input port, the radio frequency signal from the base station antenna is transmitted to the filter 104 through the first radio frequency switch 105 for filtering, the radio frequency signal after filtering is transmitted to the amplifier 103 for amplification, the radio frequency signal after amplification is transmitted to the output port through the second radio frequency switch 107, and then is transmitted to the transceiver 101 (refer to fig. 4) through the output port for sampling.
Referring to fig. 11, in still other embodiments, the first terminal of the filter 104 may also be directly connected to the input port, and the second terminal of the filter 104 is connected to the first terminal of the first rf switch 105. With this design, when the first rf switch 105 and the second rf switch 107 are switched to connect with the amplifier 103, so as to form a channel for receiving the rf signal between the input port and the output port, the transmission path of the rf signal is: input port, filter 104, first radio frequency switch 105, amplifier 103, second radio frequency switch 107, output port. Specifically, the radio frequency signal from the base station antenna is first transmitted to the filter 104 for filtering, the filtered radio frequency signal is transmitted to the amplifier 103 for amplification through the first radio frequency switch 105, the amplified radio frequency signal is transmitted to the output port through the second radio frequency switch 107, and then transmitted to the transceiver 101 (refer to fig. 4) through the output port for sampling.
It should be noted that in the highly integrated rf front-end chip provided in the embodiment of the present application, the second end of the filter 104 is not directly connected to the output port, so that when the second rf switch 107 is switched to be connected to the transmission channel and the first rf switch 105 is switched to be connected to the load element 106 (refer to fig. 4) to form the second feedback detection channel, the authenticity of the rf signal data detected by the second feedback detection channel can be improved. This is because, when the second feedback detection channel is formed, the second terminal of the second rf switch 107 is switched to be connected to the transmission channel, and the second terminal of the first rf switch 105 is switched to be connected to the load element 106, that is, the transmission path of the rf signal formed at this time is: the transmission channel, the second rf switch 107 and the output port, i.e. the second feedback detection channel, are used to transmit the rf signal transmitted from the transmission channel and transmit the rf signal to the feedback channel 20 of the transceiver 101 via the output port for detection. In order to make the detected data truly reflect the quality of the actual rf signal transmitted by the transmitting channel, it is necessary that the rf signal transmitted by the second feedback detecting channel is the rf signal directly from the transmitting channel without processing. Therefore, the second end of the filter 104 is not directly connected to the output port, so that after the second feedback detection channel is formed, the rf signal from the transmission channel can be directly transmitted to the output port via the second rf switch 107 without passing through the filter 104, thereby improving the authenticity of the rf signal data detected by the second feedback detection channel.
In some embodiments, a highly integrated radio frequency front end chip may include: the die, the amplifier 103, the filter 104, the first rf switch 105 and the second rf switch 107 are integrated on the same die. It should be noted that the die referred to herein is a bare chip without packaging, that is, the highly integrated rf front-end chip provided by the embodiments of the present application is a die after packaging. The amplifier 103, the filter 104, the first radio frequency switch 105 and the second radio frequency switch 107 are integrated on the same die, so that the length of line connection between different components integrated on the die can be shortened, the electrical connection loss is reduced, and the sensitivity of a radio frequency front-end chip is improved. In addition, the amplifier 103, the filter 104, the first rf switch 105 and the second rf switch 107 are integrated on the same die, so that the space of the die can be fully utilized, thereby further reducing the size of the rf front-end chip and the area of the rf front-end of the base station.
In other embodiments, the highly integrated rf front-end chip may also include: two interconnected dies, wherein the amplifier 103 and the first rf switch 105 are integrated on one die, and the filter 104 and the second rf switch 107 are integrated on the other die. In consideration of the process difficulty of actually preparing a highly integrated radio frequency front end chip, the amplifier 103, the first radio frequency switch 105, the filter 104 and the second radio frequency switch 107 are respectively integrated on two dies, so that the process difficulty is reduced. The two dies are interconnected, so that the electrical connection among the amplifier 103, the first rf switch 105, the filter 104 and the second rf switch 107 can be realized.
In still other embodiments, three interconnected dies may be included, wherein the first rf switch 105 and the amplifier 103 are integrated on one die, and the filter 104 and the second rf switch 107 are integrated on two dies, respectively.
In still other embodiments, 4 dies may be interconnected, wherein the first rf switch 105, the amplifier 103, the filter 104, and the second rf switch 107 are integrated on the 4 dies, respectively.
It is understood that in some embodiments, a highly integrated rf front-end chip may include only: 1 first rf switch 105, 1 amplifier 103, 1 filter 104 and 1 second rf switch 107, thereby forming a path for receiving rf signals. In other embodiments, a highly integrated rf front-end chip may also include a plurality of: the first rf switch 105, the amplifier 103, the filter 104, and the second rf switch 107 are connected in the same relationship, so that a plurality of independent paths for receiving the rf signals are formed, and the paths are respectively used for forming a first feedback detection channel and a second feedback detection channel, for example, 2 feedback detection channels, for the rf signals transmitted by different transmission channels, so as to reduce the number of rf front-end chips used in the rf front-end for the base station, thereby further reducing the area and cost of the rf front-end for the base station. The plurality of first rf switches 105, the amplifiers 103, the filters 104, and the second rf switches 107 may be integrated on the same die or different dies.
In some embodiments, further comprising: a package structure (not shown) that encapsulates the die. No matter the first rf switch 105, the amplifier 103, the filter 104, and the second rf switch 107 are integrated on the same die or integrated on multiple dies, they are all encapsulated by the same package structure, thereby forming the highly integrated rf front-end chip provided in the embodiment of the present application. Compared with the prior art that an external one-of-five switch and an external filter need to be packaged independently, the second radio frequency switch 107 and the filter 104 are added to the existing radio frequency front-end chip, so that detection of various data of radio frequency signals in a transmitting channel can be achieved, and the second radio frequency switch 107 and the filter 104 can be integrated into the existing radio frequency front-end chip and packaged together. Namely, under the condition that the radio frequency front end has normal functions, the independent packaging of the external one-of-five switch and the filter 104 is omitted, and the packaging size of the current radio frequency front end chip is kept unchanged, so that the area of the radio frequency front end is reduced, and the packaging cost is greatly reduced. Specifically, in some embodiments, the package structure may include a package substrate bonded to the die and a package film encapsulating the die and the first and second rf switches 105, 107, the amplifier 103, and the filter 104 integrated on the die. The package substrate may be a rigid package substrate, such as any one of a polymer substrate, a composite substrate, or a ceramic substrate. The package substrate may be a flexible package substrate, and a material of the flexible package substrate may be any one of PI (polyimide) resin or PE (polyester) resin.
In the highly integrated radio frequency front-end chip provided in the above embodiment, the first radio frequency switch 105, the second radio frequency switch 107, and the amplifier 103 are integrated, and when the second radio frequency switch 107 and the first radio frequency switch 105 are switched to be connected to the amplifier 103, the radio frequency signal can be received, and at the same time, a first feedback detection channel is formed; when the second rf switch 107 is connected to the rf signal transmission channel and the first rf switch 105 is connected to the load element 106, a second feedback detection channel is formed. That is, by integrating the first rf switch 105 and the second rf switch 107 in the highly integrated rf front-end chip, a one-of-five switch for forming a plurality of feedback detection paths in the rf front-end chip can be omitted, so that an independent package for an external one-of-five switch is not required. The second rf switch 107 and the filter 104 are integrated by using the redundant space in the current highly integrated rf front-end chip, so that the area and cost of the rf front-end chip are greatly reduced without increasing the package size of the current rf front-end chip.
Accordingly, another embodiment of the present application further provides a radio frequency front end for a base station, specifically referring to fig. 12, where fig. 12 is a schematic circuit connection diagram of a radio frequency front end for a base station according to another embodiment of the present application, and the radio frequency front end for a base station includes: a base station antenna, a transceiver 101, a receiving channel and a transmitting channel, wherein the receiving channel includes the high integrated radio frequency front end chip provided in the previous embodiment; the transceiver 101 is in communication connection with the base station antenna through a receiving channel, the transceiver 101 includes a plurality of feedback channels 20, and the feedback channels 20 are used for detecting to-be-detected data corresponding to the radio frequency signal transmitted through the transmitting channel; a first terminal of the second rf switch 107 is connected to the feedback channel 20 in the transceiver 101, a second terminal of the second rf switch 107 switches the connection to the transmit channel and the receive channel, and the second rf switch 107 and the first rf switch 105 are configured to: when the first rf switch 105 is switched to connect with the receiving channel and the second rf switch 107 is switched to connect with the receiving channel, a first feedback detection channel is established between the receiving channel and the feedback channel 20; when the first rf switch 105 is switched to connect with the load element 106 and the second rf switch 107 is switched to connect with the transmit channel, a second feedback detection channel is established between the transmit channel and the feedback channel 20.
The high-integration radio frequency front-end chip is located in the receiving channel, and when the first radio frequency switch 105 in the high-integration radio frequency front-end chip is switched to be connected with the first end of the amplifier 103 and the second radio frequency switch 107 is switched to be connected with the second end of the amplifier 103, a receiving channel for transmitting the radio frequency signal from the base station antenna can be formed at the input port and the output port, so that the receiving channel can normally receive the radio frequency signal.
The transmit path includes a power amplifier 109 for amplifying the signal transmitted by the transmit path so that the rf signal reaches a sufficient rf power and is fed to the base station antenna. The first terminal of the power amplifier 109 is configured to receive a radio frequency signal, and the second terminal of the power amplifier 109 is configured to output the radio frequency signal.
The feedback channel 20 in the transceiver 101 may detect data to be detected corresponding to the radio frequency signal transmitted by the transmission channel, for example, data such as transmission power, reflection power, and digital predistortion of the radio frequency signal. Specifically, the transmission power of the radio frequency signal refers to the power of the radio frequency signal transmitted by the transmission channel after being processed by the power amplifier 109 in the transmission channel; the reflected power refers to the power corresponding to the part of the radio frequency signal reflected back by the radio frequency signal transmitted by the transmission channel in the process of feeding the radio frequency signal to the base station antenna. Only 4 receive channels are shown in fig. 11, denoted respectively as: RX1, RX2, RX3, RX4, and 4 transmit channels, respectively denoted as: TX1, TX2, TX3, TX4, and in fact, there may be more receive channels as well as transmit channels.
The transmit path, receive path, and base station antenna are connected by a circulator 108, so that the transmission path of the rf signal is: transmitting the data to a base station antenna by a transmitting channel; transmitted by the base station antenna to the receive path. Specifically, a first end of the circulator 108 is connected to the base station antenna, a second end of the circulator 108 is connected to the input port, and a third end of the circulator 108 is connected to a first end of the power amplifier 103 in the transmission path.
Specifically, taking the receiving channel RX1 and the transmitting channel TX1 as examples, and taking the first rf switch 105 and the second rf switch 107 as single-pole double-throw switches as examples, the principle that the base station according to another embodiment of the present application performs normal reception of the rf signal by using the rf front end and detects the transmission power, the reflected power and the digital predistortion data corresponding to the rf signal transmitted through the transmitting channel is as follows:
the first terminal of the first rf switch 105 includes 1 input terminal a connected to the second terminal of the circulator 108 for receiving the rf signal from the base station antenna, and the second terminal of the first rf switch 105 includes 2 output terminals, wherein the output terminal b is connected to the load element 106, and the output terminal c is connected to the first terminal of the amplifier 103, when the input terminal a of the first rf switch 105 is switched to connect with the 2 output terminals, the switchable connection with the amplifier 103 and the load element 106 is realized. The first terminal of the second rf switch 107 comprises 1 output terminal d connected to the feedback channel 20 of the transceiver 101, and the second terminal of the second rf switch 107 comprises 2 input terminals, wherein the input terminal e is connected to the second terminal of the power amplifier 109 in the transmit channel, and the input terminal f is connected to the second terminal of the filter 104.
When the receiving channel is in operation, the input end a of the first rf switch 105 is switched to be connected with the output end c, that is, to be connected with the first end of the amplifier 103, the output end d of the second rf switch 107 is switched to be connected with the input end f, that is, to be connected with the second end of the filter 104, so as to connect the amplifier 103 and the filter 104, and communicate the circulator 108 with the receiving channel, and communicate the receiving channel with the feedback channel 20 in the transceiver 101, and the feedback channel 20 is multiplexed with the receiving channel, so that the rf signal from the base station antenna can be transmitted to the feedback channel 20 in the transceiver 101 for sampling processing through the receiving channel. In other embodiments, when the number of the output terminals of the second rf switch 107 is greater than 1, the output terminals of the second rf switch 107 may be connected to the feedback channel 20 and the receiving channel in the transceiver 101, respectively.
Detecting the transmitting power and the digital predistortion: the input end a of the first rf switch 105 is switched to be connected with the output end b, i.e. to be connected with the load element 106, the output end d of the second rf switch 107 is switched to be connected with the input end e, i.e. to be connected with the second end of the power amplifier 109 in the transmitting channel, so as to form a second feedback detection channel, and the receiving channel does not work. The transmission path of the radio frequency signal is as follows: the rf signal amplified by the power amplifier 109 in the transmitting channel is transmitted to the input end e of the second rf switch 107, and then transmitted to the feedback channel 20 of the transceiver 101 through the output end d of the second rf switch 107, so as to detect the transmitting power and the digital predistortion of the rf signal.
In some embodiments, when detecting the reflected power, the circuit connection relationship of the rf front end for the base station may be: the input terminal a of the first rf switch 105 is switched to connect with the output terminal c, i.e. to connect with the first terminal of the amplifier 103, and the output terminal d of the second rf switch 107 is switched to connect with the input terminal f, i.e. to connect with the second terminal of the filter 104, forming a first feedback detection channel. It can be easily seen that the first feedback detection channel is connected to the same channel as the receiving channel during normal operation, because: in the process of transmitting the rf signal transmitted in the transmitting channel to the base station antenna through the circulator 108, due to the damage of part of the base station antenna and the like, part of the rf signal is reflected back through the circulator 108, and based on the characteristics of the circulator 108, the reflected rf signal can only be transmitted from the first end of the circulator 108 to the second end of the circulator 108, that is, the path along which the reflected rf signal is transmitted is the same as the path along which the receiving channel normally receives the rf signal from the base station antenna.
In other embodiments, when detecting the reflected power, the circuit connection relationship of the radio frequency front end used by the base station may also be: the input a of the first rf switch 105 is switched to be connected to the output b, i.e. to the load element 106, and the output d of the second rf switch 107 is switched to be connected to the input f, i.e. to the second terminal of the amplifier 103. When the reflected rf signal passes through the first rf switch 105 and is transmitted to the load element 106, due to the coupling degree of the first rf switch 105, part of the rf signal passing through the first rf switch 105 is transmitted from the output terminal c to the amplifier 103, and after the rf signal passes through the gain of the amplifier 103, the rf signal is transmitted to the feedback channel 20 in the transceiver for detection.
As can be seen from the above analysis, in the radio frequency front end for a base station provided in another embodiment of the present application, the first radio frequency switch 105, the amplifier 103, the filter 104, and the second radio frequency switch 107 are integrated into the same radio frequency front end chip to form a highly integrated radio frequency front end chip, when the chip is applied to a radio frequency front end, the first feedback detection channel and the second feedback detection channel can be formed by switching the connection manner of the first radio frequency switch 105 and the second radio frequency switch 107, and the formed first feedback detection channel can also be used as a normal receiving channel for a radio frequency signal from an antenna of the base station. Therefore, a one-out-of-five switch and a filter which are independently packaged in the current radio frequency front end can be omitted, so that independent packaging for the external one-out-of-five switch and the filter is not needed, and the area and the cost of the radio frequency front end are greatly reduced under the condition that the packaging size of a current radio frequency front end chip is not increased.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the present application, and that various changes in form and details may be made therein without departing from the spirit and scope of the present application in practice. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the application, and it is intended that the scope of the application be limited only by the claims appended hereto.

Claims (10)

1. A highly integrated radio frequency front end chip, comprising:
an input port for receiving a radio frequency signal from a base station antenna and an output port via which the radio frequency signal is sent to a feedback channel of a transceiver;
an amplifier for amplifying the radio frequency signal transmitted through the input port;
a filter for filtering the radio frequency signal transmitted via the input port;
a first rf switch having a first terminal connected to the input port and a second terminal for switchably connecting to the first terminal of the amplifier and a load element;
a second RF switch having a first terminal connected to the output port and a second terminal for switchably connecting to the amplifier second terminal and an external RF signal transmission channel, the first and second RF switches configured to: when the first radio frequency switch is switched to be connected with the first end of the amplifier and the second radio frequency switch is switched to be connected with the second end of the amplifier, a first feedback detection channel is established; and when the first radio frequency switch is switched to be connected with the load element and the second radio frequency switch is switched to be connected with the transmitting channel, establishing a second feedback detection channel.
2. The highly integrated radio frequency front end chip according to claim 1, further comprising: a die, the amplifier, the filter, the first radio frequency switch, and the second radio frequency switch integrated on the same die.
3. The highly integrated radio frequency front end chip according to claim 1, further comprising: two interconnected dies, wherein the amplifier and the first RF switch are integrated on one of the dies, and the filter and the second RF switch are integrated on the other die.
4. The highly integrated radio frequency front-end chip according to claim 2 or 3, further comprising: a package structure encapsulating the die.
5. The high integrated radio frequency front end chip of claim 1, wherein the first radio frequency switch is a single pole double throw switch.
6. The high integrated radio frequency front end chip according to claim 1 or 5, wherein the second radio frequency switch is a single-pole double-throw switch.
7. The high integrated radio frequency front end chip according to claim 1 or 5, wherein the second radio frequency switch comprises: a plurality of output terminals and a plurality of input terminals, the plurality of output terminals are used for correspondingly connecting with a feedback channel and a receiving channel in the transceiver, the input terminals are used for switchably connecting with the amplifier and the radio frequency signal transmitting channel, wherein the number of the output terminals is M, the number of the input terminals is N, M > 1, N > 1.
8. The highly integrated radio frequency front-end chip according to claim 1, wherein a first end of the filter is connected to a second end of the amplifier, and a second end of the filter is connected to a second end of the second radio frequency switch.
9. The highly integrated radio frequency front-end chip according to claim 1, wherein a first end of the filter is connected to a second end of the first radio frequency switch, and a second end of the filter is connected to a first end of the amplifier.
10. A radio frequency front end for a base station, comprising: a base station antenna, a transceiver, a receive channel and a transmit channel, the receive channel comprising the high integrated radio frequency front end chip of any one of the preceding claims 1-9;
the transceiver is in communication connection with the base station antenna through the receiving channel, and comprises a plurality of feedback channels, and the feedback channels are used for detecting to-be-detected data corresponding to the radio-frequency signals transmitted through the transmitting channel;
the first end of the second radio frequency switch is connected with a feedback channel in the transceiver, the second end of the second radio frequency switch switches the connection with the transmitting channel and the receiving channel, and the second radio frequency switch and the first radio frequency switch are configured to: when the first radio frequency switch is switched to be connected with the receiving channel and the second radio frequency switch is switched to be connected with the receiving channel, a first feedback detection channel is established between the receiving channel and the feedback channel; when the first radio frequency switch is switched to be connected with a load element and the second radio frequency switch is switched to be connected with the transmitting channel, a second feedback detection channel is established between the transmitting channel and the feedback channel.
CN202210518323.4A 2022-05-13 2022-05-13 High-integration radio frequency front-end chip and radio frequency front-end for base station Pending CN114629523A (en)

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CN110492951A (en) * 2019-08-02 2019-11-22 Oppo（重庆）智能科技有限公司 A kind of RF FEEDBACK detection circuit, antenna module and electronic equipment
CN212677157U (en) * 2020-07-16 2021-03-09 安科讯(福建)科技有限公司 Micro base station radio frequency front end
WO2022002099A1 (en) * 2020-06-30 2022-01-06 中兴通讯股份有限公司 Standing wave detection method, standing wave detection apparatus, and network device

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Publication number Priority date Publication date Assignee Title
CN202190410U (en) * 2011-07-22 2012-04-11 京信通信系统（中国）有限公司 Standing wave detecting device and radio remote unit
CN107449981A (en) * 2017-07-24 2017-12-08 武汉虹信通信技术有限责任公司 The simple multiple signals coupling detection means and method of power of mobile communication amplifier
CN110492951A (en) * 2019-08-02 2019-11-22 Oppo（重庆）智能科技有限公司 A kind of RF FEEDBACK detection circuit, antenna module and electronic equipment
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Application publication date: 20220614