CN217127521U - Rotary cathode magnetron sputtering coating unit - Google Patents
Rotary cathode magnetron sputtering coating unit Download PDFInfo
- Publication number
- CN217127521U CN217127521U CN202220480163.4U CN202220480163U CN217127521U CN 217127521 U CN217127521 U CN 217127521U CN 202220480163 U CN202220480163 U CN 202220480163U CN 217127521 U CN217127521 U CN 217127521U
- Authority
- CN
- China
- Prior art keywords
- cathode
- plate
- shielding
- auxiliary
- magnetron sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The utility model relates to a rotatory negative pole magnetron sputtering coating film unit, including negative pole target, negative pole assembly seat, two side shields and the supplementary shield of several, the negative pole target periphery is along being cylindricly, but assembles in a negative pole assembly seat with dead axle rotation respectively at the ascending both ends of negative pole target length direction, and two side shields are parallel to each other and are located the both sides setting of negative pole target on coating film substrate moving direction respectively. One end of the auxiliary shielding plate is detachably assembled on the side shielding plate, and the other end of the auxiliary shielding plate extends towards the space between the cathode target and the coating base material. The utility model discloses a setting of supplementary shield plate, when the coating film substrate moves to the coating film cavity in and when beginning the coating film, the coating material that comes from rotatory cathode target material sputter is in the middle of the process to the coating film substrate operation, and the material that lies in the cathode target material sputter of supplementary shield plate below will receive supplementary shield plate and shelter from, and then improves the homogeneity of the rete thickness that forms on the coating film substrate.
Description
Technical Field
The utility model relates to a magnetron sputtering equipment field in the physical vapor deposition, concretely relates to rotary cathode magnetron sputtering coating film unit.
Background
Magnetron sputtering rotating cylindrical cathode targets (rotating targets for short) are widely applied to the production of industrially prepared large-area functional thin films. Although having undergone decades of development and innovation, the rotary target still has the following problems in industrial production: firstly, the magnetic field perpendicular to the electric field on the surface of the target material is unevenly distributed, so that the sputtering etching of the target material is uneven, and the utilization rate of the target material is reduced; meanwhile, the target material is not uniformly sputtered and etched, so that the thickness of the film layer is not uniform along the length direction of the target material in the large-area film coating process, and the quality of the film layer and the color of a product are further influenced; secondly, the uniformity of the material density and the quality of the rotating target material along the length direction also affects the uniformity of the sputter etching of the target material along the length direction. In the actual production process, two targets with the same diameter are found to have different etching uniformity after being used in the same magnetron sputtering unit, which is mainly caused by the uneven quality and density of the targets.
For example, in the adjustable cathode baffle plate related to the chinese patent application publication No. CN108193183A, two L-shaped baffle plates are disposed oppositely and axially symmetrically on the cathode baffle plate, and an adjustable telescopic mechanism is disposed at the bottom end of the long plate of the L-shaped baffle plate, so as to adjust the film forming rate of the magnetron sputtering cathode by adjusting the size of the opening of the baffle plate, thereby optimizing the lateral uniformity of the large-area coated glass. However, the practical application of the structure is inconvenient, specifically, the thickness uniformity of the film layer is affected due to the difference of material density, quality uniformity and the like of each batch of cathode target materials, that is, the size of the opening needs to be adjusted correspondingly for each batch of cathode target materials, even if the same L-shaped baffle is adjusted to the maximum by the opening, the adjustment is not accurate enough, and the bolt is required to be repeatedly disassembled and assembled during each adjustment of the bolt adjusting mode in practical operation, so that the operation is complicated.
Disclosure of Invention
The utility model provides a rotary cathode magnetron sputtering coating unit, which solves the problems.
The utility model adopts the following technical scheme:
a rotary cathode magnetron sputtering coating unit is used for coating a coating substrate, the coating substrate can be movably arranged, and the moving direction of the coating substrate passes through the rotary cathode magnetron sputtering coating unit. The rotary cathode magnetron sputtering coating unit comprises a cathode target, a cathode assembly seat, two side shielding plates and a plurality of auxiliary shielding plates, wherein the periphery of the cathode target is cylindrical, two ends of the cathode target in the length direction are respectively assembled on the cathode assembly seat in a fixed-axis rotating manner, the length direction of the cathode target is perpendicular to the movement direction of the coating substrate, and the two side shielding plates are parallel to each other and are respectively arranged on two sides of the cathode target in the movement direction of the coating substrate. One end of the auxiliary shield plate is detachably assembled on the side shield plate, and the other end of the auxiliary shield plate extends towards the space between the cathode target and the coating base material.
Further:
the rotary cathode magnetron sputtering coating unit also comprises an anode and a top shielding plate, wherein the anode is arranged in an anode shielding case attached to the anode, the top shielding plate is arranged above the coating substrate, and the top shielding plate, the coating substrate, the cathode target and the anode shielding case are sequentially arranged from top to bottom.
The surface of the coating substrate, which is opposite to the cathode target material, is a coating surface. The cathode target is provided with two cathode targets, the two cathode targets are arranged in parallel in the length direction, and the planes of the two cathode targets in the length direction are parallel to the film coating surface. The two side shielding plates are respectively arranged at one side of the two cathode targets which are deviated from each other.
The number of the top shielding plates is two, and the two top shielding plates are arranged along the direction parallel to the length direction of the cathode target. The top shielding plate is in a folded plate shape, one end of the top shielding plate, which is positioned above the film-coated base material, is parallel to the film-coated surface, one end of the top shielding plate, which is positioned above the film-coated base material, oppositely extends to the middle of the film-coated base material, and the other end of the top shielding plate in the folded plate shape structure is respectively positioned on two sides of the cathode assembling seat, which are deviated from the position of the cathode target material.
The rotary cathode magnetron sputtering coating unit also comprises two groups of cooling pipelines, wherein the two cooling pipelines are respectively arranged at one side of the two side shielding plates which are deviated from each other. The side shield plate is fitted to the cooling pipe.
The auxiliary shielding plate comprises a shielding main body and a connecting end, wherein the shielding main body and the connecting end are integrally formed, and the shielding main body is detachably assembled on the side shielding plate through the connecting end.
The auxiliary shielding plates are arranged in two groups, and the two groups of auxiliary shielding plates are respectively detachably assembled on the two side shielding plates.
The auxiliary shielding plate is integrally arranged in an F-shaped structure, two plate-shaped structures which are parallel to each other in the F-shaped structure of the auxiliary shielding plate are the connecting ends, and the plate-shaped structure which is positioned in the F-shaped structure of the auxiliary shielding plate and is in a plane which is perpendicular to the two plate-shaped structures at the connecting ends is the shielding main body. The distance between the two parallel plate structures of the connecting end is matched with the thickness of the side shielding plate, the connecting end is clamped on the top edge of the side shielding plate, and the two parallel plate structures of the connecting end are clamped on two sides of the side shielding plate. The plane of the shielding main body is parallel to the film coating surface. The two groups of auxiliary shielding plates correspond to each other one by one, and the shielding main bodies corresponding to the auxiliary shielding plates extend oppositely.
The auxiliary shielding plates are sequentially arranged along a direction parallel to the length direction of the cathode target, and adjacent auxiliary shielding plates are adjacent to each other.
The extending distance of the shielding main body extending from the side shielding plate where the shielding main body is located to the direction of the other side shielding plate is the length of the auxiliary shielding plate, and the extending distance of the shielding main body extending along the direction parallel to the length direction of the cathode target is the width of the auxiliary shielding plate. The width of each auxiliary shield plate is equal. Each auxiliary shield plate corresponds to a cathode target with the length being the width of one auxiliary shield plate, and the corresponding relation is a part of a plane which passes through the auxiliary shield plate and is vertical to the length direction of the cathode target and intersects with the cathode target. The length of each auxiliary shielding plate corresponds to the reduction of the outer diameter of the cathode target in one coating period after the cathode magnetron sputtering coating unit is rotated before the auxiliary shielding plate is assembled.
From the above description of the structure of the present invention, compared with the prior art, the present invention has the following advantages:
the utility model discloses a setting of supplementary shield plate, when the coating film substrate moves to the coating film cavity in and when beginning sputter the coating film, the coating material that comes from rotatory cathode target sputter is in the middle of the process to the coating film substrate operation, and the material that is located the cathode target sputter of supplementary shield plate below will receive supplementary shield plate and shelter from. To the higher region of rotatory cathode etching rate, install above it the utility model discloses an auxiliary shield plate and/or select the auxiliary shield plate of longer length can reduce the deposition rate of the coating film face of sputtered target material at this regional top coating film substrate, and then improve the homogeneity of the rete thickness that forms on the coating film substrate.
The utility model discloses an auxiliary shield plate detachably assembles in the mode that sets up of side shield plate, can tear off all auxiliary shield plates when auxiliary shield plate length is markd, to accomplishing a coating film cycle in advance like the negative pole target from same batch, selects for use corresponding length auxiliary shield plate in each position according to the coating film condition of each position in this coating film cycle, marks more accurate swift.
And in the further scheme of the utility model, supplementary shield plate is whole to be F style of calligraphy structure, and supplementary shield plate blocks one by one and follows on the side shield plate top, only need take the supplementary shield plate of appointed length during the installation, then block on the side shield plate top along can, and pull down supplementary shield plate then only need upwards take up can, can accomplish hard convenient operation is swift.
Drawings
Fig. 1 is a schematic top view of the magnetron sputtering coating unit with rotary cathode according to the present invention.
Fig. 2 is a schematic front view of the magnetron sputtering coating unit with rotary cathode according to the present invention.
Fig. 3 is a schematic side view of the rotary cathode magnetron sputtering coating unit of the present invention.
Fig. 4 is a schematic structural view of the auxiliary shielding plate of the present invention.
Fig. 5 is a schematic diagram of dimension marking used in calculating the length of the auxiliary shielding plate according to the present invention.
Detailed Description
The following describes embodiments of the present invention with reference to the drawings.
Referring to fig. 1, 2 and 3, a rotary cathode magnetron sputtering coating unit is used for coating a coated substrate 8, and the coated substrate 8 can be movably arranged and the moving direction passes through the rotary cathode magnetron sputtering coating unit. This embodiment uses coating substrate 8 to be metal coil and the coating equipment to carry out the specific description for the used rotatory cathode magnetron sputtering coating unit of volume to volume coating equipment, and the used rotatory cathode magnetron sputtering coating unit of other equipment refers to the rotatory cathode magnetron sputtering coating unit of this embodiment and refers to the setting the utility model discloses an auxiliary shield 7 can. The rotary cathode magnetron sputtering coating unit according to the present embodiment has a typical structure, and the rotary cathode magnetron sputtering coating unit of the present embodiment mainly includes the auxiliary shield 7, so that only the structure related to the auxiliary shield 7 will be described.
With continuing reference to fig. 1, 2 and 3, the rotary cathode magnetron sputtering coating unit comprises an anode 1, two cathode targets 2, a cathode assembly seat 3, two side shielding plates 4, two top shielding plates 5, two sets of cooling pipelines 6 and a plurality of auxiliary shielding plates 7, wherein the anode 1 is arranged in an anode shielding case 11 attached to the anode 1, the periphery of the cathode target 2 is cylindrical, two ends of the cathode target 2 in the length direction are respectively assembled on one cathode assembly seat 3 in a fixed-axis rotation manner, the length direction of the cathode target 2 is perpendicular to the moving direction of the coated substrate 8, one surface of the coated substrate 8, which is opposite to the cathode target 2, is a coated surface, the two cathode targets 2 are arranged in parallel in the length direction, the planes of the two cathode targets 2 in the length direction are parallel to the coated surface, the two side shielding plates 4 are parallel to each other and are respectively arranged at two sides of the cathode target 2 in the moving direction of the coated substrate 8, two side shield plates 4 are respectively arranged on one side where two cathode targets 2 deviate from each other, the top shield plate 5 is arranged above the coating substrate 8, the top shield plate 5, the coating substrate 8, the cathode targets 2 and the anode shield 11 are sequentially arranged from top to bottom, the two top shield plates 5 are arranged along the direction parallel to the length direction of the cathode targets 2, the two cooling pipelines 6 are respectively arranged on one side where the two side shield plates 4 deviate from each other, and the side shield plates 4 are assembled on the cooling pipelines 6. The top shielding plate 5 is in a folded plate shape, one end of the top shielding plate 5 above the coated substrate 8 is parallel to the coated surface, one end of the top shielding plate 5 above the coated substrate 8 oppositely extends to the middle of the coated substrate 8, and the other end of the top shielding plate 5 in the folded plate shape is respectively located at two sides of the cathode assembling base 3 away from the cathode target 2. Namely, the side shield plates 4 and the top shield plate 5 substantially enclose a coating chamber above the cathode target 2. In the figure, since only the rotating cathode magnetron sputtering coating unit is illustrated, and the rotating cathode magnetron sputtering coating unit is generally applied to a coating device, a rack structure assembled by structures such as the top shielding plate 5, the cooling pipeline 6 and the like is not shown in the figure.
Referring to fig. 1, 2, 3 and 4, one end of the auxiliary shield plate 7 is detachably attached to the side shield plate 4, and the other end of the auxiliary shield plate 7 extends between the cathode target 2 and the coating substrate 8. Each of the auxiliary shield plates 7 includes a shield body 71 and a connecting end 72, the shield body 71 and the connecting end 72 are integrally formed, and the shield body 71 is detachably mounted to the side shield plate 4 through the connecting end 72. The plurality of auxiliary shielding plates 7 are arranged in two groups, and the two groups of auxiliary shielding plates 7 are respectively and detachably assembled on the two side shielding plates 4. Specifically, the auxiliary shield plate 7 is disposed in an F-shaped structure as a whole, two plate-shaped structures parallel to each other in the F-shaped structure of the auxiliary shield plate 7 are the connection ends 72, and a plate-shaped structure in the F-shaped structure of the auxiliary shield plate 7, which is located on a plane perpendicular to the two plate-shaped structures of the connection ends 72, is the shield main body 71. The distance between the two parallel plate structures of the connecting end 72 is matched with the thickness of the side shielding plate 4, the connecting end 72 is clamped at the top edge of the side shielding plate 4, and the two parallel plate structures of the connecting end 72 are clamped at the two sides of the side shielding plate 4. The distance between the two parallel plate-shaped structures of the connecting end 72 is matched with the thickness of the side shield plate 4, and the two parallel plate-shaped structures of the connecting end 72 are clamped on the two sides of the side shield plate 4, so that the distance is equal to or slightly larger than the thickness of the side shield plate 4. The plane of the shielding main body 71 is parallel to the film coating surface. The two sets of auxiliary shielding plates 7 correspond one to one, and the shielding bodies 71 of the corresponding auxiliary shielding plates 7 extend oppositely.
With continued reference to fig. 1, 2, 3, and 4, the auxiliary shield plates 7 are sequentially arranged in a direction parallel to the longitudinal direction of the cathode target 2, and adjacent auxiliary shield plates 7 are adjacent to each other. The extension distance of the shielding body 71 extending from the side shielding plate 4 where the shielding body is located toward the other side shielding plate 4 is the length of the auxiliary shielding plate 7, and the extension distance of the shielding body 71 extending in the direction parallel to the longitudinal direction of the cathode target 2 is the width of the auxiliary shielding plate 7. Each auxiliary shield plate 7 has the same width. Each auxiliary shield plate 7 corresponds to a cathode target 2 having a length corresponding to the width of one auxiliary shield plate 7, and the correspondence relationship is a portion where a plane passing through the auxiliary shield plate 7 and perpendicular to the length direction of the cathode target 2 intersects with the cathode target 2. The length of each auxiliary shield plate 7 corresponds to the reduction of the outer diameter of the cathode target 2 in one coating period completed by rotating the cathode magnetron sputtering coating unit before the auxiliary shield plates 7 are assembled with the corresponding cathode target 2.
Referring to fig. 1 to 5, the present embodiment briefly describes the determination of the length of the auxiliary shield plate 7 in the application of a cathode target 2 of 1850mm in length and 150mm in initial diameter, which is commonly used by the applicant, to the above-mentioned rotary cathode magnetron sputtering coating unit used in a roll-to-roll coating apparatus. The length of the auxiliary shield plate 7 may be determined by the following method, or other methods such as direct detection of the film thickness distribution of the finished coated product may be used. In fig. 1, the length of one group of the auxiliary shielding plates 7 is only indicated by a dotted line, and the length of the auxiliary shielding plate 7 in the figure is only used for illustration and does not represent the absolute length of the auxiliary shielding plate 7 at the position, and the length of the auxiliary shielding plate 7 needs to be calibrated according to actual conditions. Fig. 5 is a diagram in which a part of the structure is not shown, and in order to facilitate understanding of the dimension used for calculating the length of the auxiliary shield 7, a dedicated indication for each dimension position is added. Specifically, the method comprises the following steps:
firstly, taking the plane of the base where the roll-to-roll coating equipment is located as a horizontal plane, measuring the height H1 of the top edge of the side shielding plate 4, the height H2 of the central axis of the two cathode targets 2 in the length direction, the distance L1 of the central line position between the central axis of the cathode targets 2 in the length direction and the two cathode targets 2 in parallel arrangement, and the distance L2 of the central line position between the central line position of the side shielding plate 4 and the two cathode targets 2 in parallel arrangement.
In the second step, in the present calculation example, the thickness of the side shield plate 4 is 13mm, that is, the distance between the two parallel plate-like structures of the connecting end 72 is approximately 13 mm. And the auxiliary shield plate 7 is preferably made of a stainless steel plate 10mm thick and the surface is subjected to sand blasting. The width of the auxiliary shield plate 7 is 70mm, and the width can well balance the sampling workload, the workload of assembling the auxiliary shield plate 7 and the like during calibration and the uniformity of a coated finished product. Specifically, the outer diameter of the cathode target 2 before use was measured as one sampling point for each 70 mm. The outer diameter is D 1-1 、D 2-1 、…D m-1 …、D n-1 。
Thirdly, after the cathode target 2 is installed and used, the diameter D of the cathode target 2 at the same measurement position is recorded again according to the method described in the second step 1-2 、D 2-2 、…D m-2 …、D n-2 。
The fourth step, rootFrom the practical use, we have found that for this case, the etching rate of each point of the cathode target 2 is more uniform in the middle region and faster on both sides, so that the middle region D can be used m-1 And D m-2 Etching was used as a reference, and the change in the diameter of the cathode target 2 was measured at each point before and after use (D) n-1 - D n-2 ) Variation of diameter measurement from the middle position of the rotating cathode (D) m-1 - D m-2 ) For comparison, ((D) n-1 - D n-2 ）-（D m-1 - D m-2 ））/（D m-1 - D m-2 ) The ratio of (A) to (B) is used as a part of each point which is higher than the etching rate of the middle position;
fifthly, according to theory and practical application, the region where the rotary cathode sputtering occurs is mainly positioned in the range of +/-40 degrees, and the total area of the sputtering cloud in the cross section direction of the cathode target 2 is S due to the function of the auxiliary shielding plate 7 1 +S 2 The auxiliary shield plate 7 limits the partial area of the sputtering cloud deposited on the substrate to S 1 Assuming that the length of the sputtering cloud shielded by the auxiliary shielding plate 7 is X, the loss ratio of the sputtering cloud deposited on the coated substrate 8 due to the action of the auxiliary shielding plate 7 is S 1 /（S 1 +S 2 ) The proportion of the loss of the sputter cloud to the coated substrate 8 due to the effect of the auxiliary shield 7 at that position of the cathode target 2 should be equal to the sputter increment R of the cathode target 2 relative to the middle position, i.e. R = S 1 /(S 1 +S 2 ) I.e. by
And sixthly, calculating the comparison between the etching rate of each sampling point of the cathode target material 2 and the etching rate of the middle position, namely calculating the length L of the auxiliary shielding plate 7 required by each sampling point. Wherein, since a sampling point is a point measured adjacent to 70mm, for example, two points at distances of 89mm and 159mm from the measurement zero position of the cathode target 2, the sputtering increment R taken when calculating the length L of the auxiliary shield plate 7 is an average value of the sputtering increment R calculated for the two points of 89mm and 159 mm. The length L of the auxiliary shield plate 7 is:
wherein the lengths indicated in fig. 5
，
。
The above-mentioned be the utility model discloses a concrete implementation way, nevertheless the utility model discloses a design concept is not limited to this, and the ordinary use of this design is right the utility model discloses carry out immaterial change, all should belong to the act of infringement the protection scope of the utility model.
Claims (10)
1. A rotary cathode magnetron sputtering coating unit is used for coating a coating substrate, the coating substrate can be movably arranged, and the moving direction of the coating substrate passes through the rotary cathode magnetron sputtering coating unit; the rotary cathode magnetron sputtering coating unit comprises a cathode target material, a cathode assembly seat and two side shielding plates, wherein the periphery of the cathode target material is cylindrical, two ends of the cathode target material in the length direction are respectively assembled on the cathode assembly seat in a fixed-axis rotating manner, the length direction of the cathode target material is vertical to the moving direction of a coating substrate, and the two side shielding plates are parallel to each other and respectively arranged at two sides of the cathode target material in the moving direction of the coating substrate; the method is characterized in that: the cathode target further comprises a plurality of auxiliary shielding plates, one ends of the auxiliary shielding plates are detachably assembled on the side shielding plates, and the other ends of the auxiliary shielding plates extend towards the space between the cathode target and the coating base material.
2. A rotary cathode magnetron sputtering coating unit as claimed in claim 1 wherein: the cathode target material and the anode shielding cover are sequentially arranged from top to bottom.
3. A rotary cathode magnetron sputtering coating unit as claimed in claim 2 wherein: one surface of the coating substrate, which is opposite to the cathode target material, is a coating surface; the two cathode targets are arranged in parallel in the length direction, and the planes of the two cathode targets in the length direction are parallel to the film coating surface; the two side shielding plates are respectively arranged on one sides of the two cathode targets which are deviated from each other.
4. A rotary cathode magnetron sputtering coating unit as claimed in claim 3 wherein: the number of the top shielding plates is two, and the two top shielding plates are arranged along the direction parallel to the length direction of the cathode target; the top shielding plate is in a folded plate shape, one end of the top shielding plate, which is positioned above the film-coated base material, is parallel to the film-coated surface, one end of the top shielding plate, which is positioned above the film-coated base material, oppositely extends to the middle of the film-coated base material, and the other end of the top shielding plate in the folded plate shape structure is respectively positioned on two sides of the cathode assembling seat, which are deviated from the position of the cathode target material.
5. A rotary cathode magnetron sputtering coating unit according to claim 3 or 4 wherein: the auxiliary shielding plate comprises a shielding main body and a connecting end, the shielding main body and the connecting end are integrally formed, and the shielding main body is detachably assembled on the side shielding plate through the connecting end.
6. A rotary cathode magnetron sputtering coating unit according to claim 5, characterized in that: the auxiliary shielding plates are arranged in two groups, and the two groups of auxiliary shielding plates are detachably assembled on the two side shielding plates respectively.
7. A rotary cathode magnetron sputtering coating unit as claimed in claim 6, wherein: the auxiliary shielding plate is integrally arranged in an F-shaped structure, two plate-shaped structures which are parallel to each other in the F-shaped structure of the auxiliary shielding plate are the connecting ends, and the plate-shaped structure which is positioned in a plane which is perpendicular to the two plate-shaped structures at the connecting ends in the F-shaped structure of the auxiliary shielding plate is the shielding main body; the distance between the two parallel plate-shaped structures of the connecting end is matched with the thickness of the side shielding plate, the connecting end is clamped at the top edge of the side shielding plate, and the two parallel plate-shaped structures of the connecting end are clamped at the two sides of the side shielding plate; the plane of the shielding main body is parallel to the film coating surface; the two groups of auxiliary shielding plates correspond to each other one by one, and the shielding main bodies corresponding to the auxiliary shielding plates extend oppositely.
8. A rotary cathode magnetron sputtering coating unit according to claim 5, characterized in that: the auxiliary shielding plates are sequentially arranged along the direction parallel to the length direction of the cathode target, and the adjacent auxiliary shielding plates are mutually adjacent.
9. A rotary cathode magnetron sputtering coating unit as claimed in claim 7 or 8 wherein: the extending distance of the shielding main body extending from the side shielding plate where the shielding main body is located to the direction of the position of the other side shielding plate is the length of the auxiliary shielding plate, and the extending distance of the shielding main body extending along the direction parallel to the length direction of the cathode target is the width of the auxiliary shielding plate; the width of each auxiliary shielding plate is equal; each auxiliary shield plate corresponds to a cathode target material with the length being the width of one auxiliary shield plate; the length of each auxiliary shielding plate corresponds to the reduction of the outer diameter of the cathode target in one coating period after the cathode magnetron sputtering coating unit is rotated before the auxiliary shielding plate is assembled.
10. A rotary cathode magnetron sputtering coating unit as claimed in claim 1 wherein: the two cooling pipelines are respectively arranged at one side of the two side shielding plates which are deviated from each other; the side shield plate is fitted to the cooling line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220480163.4U CN217127521U (en) | 2022-03-07 | 2022-03-07 | Rotary cathode magnetron sputtering coating unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220480163.4U CN217127521U (en) | 2022-03-07 | 2022-03-07 | Rotary cathode magnetron sputtering coating unit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217127521U true CN217127521U (en) | 2022-08-05 |
Family
ID=82643398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220480163.4U Active CN217127521U (en) | 2022-03-07 | 2022-03-07 | Rotary cathode magnetron sputtering coating unit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217127521U (en) |
-
2022
- 2022-03-07 CN CN202220480163.4U patent/CN217127521U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0620583B1 (en) | Sputtering apparatus having a rotating magnet array and fixed electromagnets | |
| US5314597A (en) | Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile | |
| US6623606B2 (en) | Method and apparatus for sputter coating with variable target to substrate spacing | |
| JPS6260866A (en) | Magnetron sputtering device | |
| CN217127521U (en) | Rotary cathode magnetron sputtering coating unit | |
| JP2011508076A5 (en) | ||
| CN108441838B (en) | Method for ion beam sputtering deposition of film on surface of medium-large diameter optical element | |
| Jiang et al. | Uniform film in large areas deposited by magnetron sputtering with a small target | |
| CN113862625A (en) | High-flux film deposition equipment and film deposition method | |
| CN108611612B (en) | Vacuum sputtering equipment and sputtering method | |
| CN109576667B (en) | Method for improving uniformity of PVD (physical vapor deposition) film layer of large-scale die | |
| CN106987817A (en) | A kind of method for improving line style magnetic controlled sputtering target rifle in spill cylinder base coated film quality | |
| US20210005439A1 (en) | Deposition Apparatus | |
| US20010045352A1 (en) | Sputter deposition using multiple targets | |
| US20100209728A1 (en) | Magnetron co-sputtering device | |
| CN214881803U (en) | Correction device for improving coating uniformity of substrate | |
| CN203602705U (en) | Adaptive magnetic field regulation type magnetron sputtering coating equipment | |
| CN111621761A (en) | Magnetron sputtering coating device and method | |
| CN104878356B (en) | A kind of determination method of magnetic control spattering target magnet placed angle | |
| CN111206216B (en) | Mosaic target material experiment design method capable of controlling film components | |
| CN205205222U (en) | Magnetron sputtering apparatus | |
| CN108168966B (en) | Device and method for manufacturing molybdenum and molybdenum alloy pipe tensile sample gauge length line | |
| Silva et al. | A model for calculating the thickness profile of TiB2 and Al multilayer coatings produced by planar magnetron sputtering | |
| CN220520605U (en) | Sputtering angle adjusting mechanism and flexible sputtering target | |
| CN117488248B (en) | Correction plate design method, correction plate, coating device and coating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |