CN217084022U - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
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- CN217084022U CN217084022U CN202220266322.0U CN202220266322U CN217084022U CN 217084022 U CN217084022 U CN 217084022U CN 202220266322 U CN202220266322 U CN 202220266322U CN 217084022 U CN217084022 U CN 217084022U
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Abstract
The utility model provides a pressure sensor relates to pressure sensor's technical field, and pressure sensor includes: the diaphragm, the separation structure and the substrate are sequentially arranged from top to bottom, and the separation structure is positioned between the diaphragm and the substrate and is used for separating the diaphragm and the substrate to form an accommodating space; the substrate is provided with multistage conductive structures which are sequentially sleeved at intervals from inside to outside, wherein the multistage conductive structures are R1, R2, R3 … … and Rn from inside to outside in sequence, and n is an integer more than or equal to 3; a QTC material layer is arranged on the top surface of the conductive structure; in two adjacent conductive structures, the resistance of the conductive structure close to the inner side is greater than that of the conductive structure close to the outer side; the back of the diaphragm is provided with a detection circuit, the detection circuit is positioned above the multistage conductive structure, the diaphragm is in a natural state, and a gap is formed between the detection circuit and the conductive structure; after the diaphragm is stressed, the conductive structure can be connected in parallel to the detection circuit.
Description
Technical Field
The utility model belongs to the technical field of the pressure sensor technique and specifically relates to a pressure sensor is related to.
Background
Typical membrane pressure sensors are made by printing on a membrane substrate using different force sensitive materials. The base layer side to which the force sensitive material is attached is kept at a distance from the base layer side on which the conductive layer is printed by using a double sided tape. When the center of the base layer surface of the sensor is pressed, the two films are close to and contact with each other under pressure, so that the pressure is measured by collecting resistance signals.
However, the existing thin film pressure sensor has a problem of nonlinearity in application. When the force-sensitive material contacts the conductive layer, the resistance value is reduced mainly due to the surface effect of the force-sensitive material. Therefore, the resistance value of the film pressure sensor can change by orders of magnitude in a small stress range. Subsequently, the rate of change of the resistance of the sensor is gradually reduced as the force applied increases. The application integration of the pressure sensor is greatly difficult due to the characteristics of the material. When the sensor is integrated into a product, the actual control prepressing becomes an unsolvable problem due to the small stress interval.
The magnitude of resistance reduction generated in a small stress interval makes the pre-pressing control difficult. The deformation between materials and the change of pressure are generally linear, so that the application of the current sensor is difficult to realize the effective control of prepressing and the generation of higher resistance change rate in a large pressure change interval.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a pressure sensor to alleviate current pressure sensor and hardly accomplish and to control the pre-compaction effectively, can produce the technical problem of higher resistance change rate again in big pressure change interval.
The embodiment of the utility model provides a pressure sensor includes: the diaphragm, the separation structure and the substrate are sequentially arranged from top to bottom, and the separation structure is positioned between the diaphragm and the substrate and is used for separating the diaphragm and the substrate to form an accommodating space;
the substrate is provided with multistage conductive structures which are sequentially sleeved at intervals from inside to outside, wherein the multistage conductive structures are R1, R2, R3 … … and Rn from inside to outside in sequence, and n is an integer more than or equal to 3; a QTC material layer is arranged on the top surface of the conductive structure; in two adjacent conductive structures, the resistance of the conductive structure close to the inner side is greater than that of the conductive structure close to the outer side;
a detection circuit is arranged on the back surface of the diaphragm, the detection circuit is positioned above the multistage conductive structure, the diaphragm is in a natural state, and a gap is formed between the detection circuit and the conductive structure; after the diaphragm is stressed, the conductive structure can be connected in parallel to the detection circuit.
Further, the detection circuit comprises a positive electrode main line and a negative electrode main line which are arranged at intervals, the positive electrode main line is connected with a plurality of positive electrode branch lines extending towards the negative electrode main line, the negative electrode main line is connected with a plurality of negative electrode branch lines extending towards the positive electrode main line, and the positive electrode branch lines and the negative electrode branch lines are parallel and are alternately arranged one by one;
at least one positive branch line and one negative branch line are arranged above the conductive structure.
Further, the positive main line and the negative main line are respectively provided with an arc structure protruding in a direction away from each other, and the positive branch line and the negative branch line are located between the two arc structures.
Further, the R1 is circular, and the R2, R3 … … and Rn are circular rings.
Further, the upper surface and the lower surface of the separation structure are respectively connected with the membrane and the substrate by adopting glue.
Furthermore, a separation unit is arranged at a gap between two adjacent conductive structures, the upper end of the separation unit is connected with the membrane, and the lower end of the separation unit is connected with the substrate.
Further, the resistivity of the materials forming R1, R2, R3 … …, and Rn are different from each other.
Further, the resistivity of the conductive structure gradually decreases from the inside to the outside.
Further, the resistivity of two adjacent conductive structures is different by 10-100 times.
Further, the diaphragm and the substrate are the same in shape and material.
The embodiment of the utility model provides a pressure sensor includes: the diaphragm, the separation structure and the substrate are sequentially arranged from top to bottom, and the separation structure is positioned between the diaphragm and the substrate and is used for separating the diaphragm and the substrate to form an accommodating space; the substrate is provided with multistage conductive structures which are sequentially sleeved at intervals from inside to outside, wherein the multistage conductive structures are sequentially R1, R2, R3 … … and Rn from inside to outside, and n is an integer more than or equal to 3; a QTC material layer is arranged on the top surface of the conductive structure; in two adjacent conductive structures, the resistance of the conductive structure close to the inner side is greater than that of the conductive structure close to the outer side; a detection circuit is arranged on the back surface of the diaphragm, the detection circuit is positioned above the multistage conductive structure, the diaphragm is in a natural state, and a gap is formed between the detection circuit and the conductive structure; after the diaphragm is stressed, the conductive structure can be connected in parallel to the detection circuit. External pressure is acted on the central point of diaphragm and is put, and detection circuit on the diaphragm is connected with R1 electricity at first, and along with pressure on the diaphragm increases gradually, the diaphragm deepens gradually by the sunken degree of center outside, and multistage conducting structure connects in detection circuit step by step in parallel, causes whole sensor's resistance to present along with the pressure grow, and the hierarchical sudden change of resistance value has obtained the expansion along with pressure sensor's high sensitivity's atress interval.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the technical solutions in the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is an exploded view of a pressure sensor according to an embodiment of the present invention;
fig. 2 is a schematic view of a pressure sensor provided in an embodiment of the present invention in a natural state;
FIG. 3 is a schematic diagram of the connection of the sensing circuit and the conductive structure of the state of FIG. 2;
fig. 4 is a schematic diagram of a pressure sensor provided by an embodiment of the present invention under a first pressure;
FIG. 5 is a schematic diagram of the connection of the sensing circuit and the conductive structure of the state of FIG. 4;
fig. 6 is a schematic diagram of a pressure sensor according to an embodiment of the present invention under a second pressure;
FIG. 7 is a schematic diagram of the connection of the sensing circuit and the conductive structure of the state of FIG. 6;
fig. 8 is a schematic diagram of a pressure sensor provided by an embodiment of the present invention under a third pressure;
FIG. 9 is a schematic diagram of the connection of the sensing circuit and the conductive structure of the state of FIG. 8;
fig. 10 is a graph illustrating pressure and resistance of a conventional pressure sensor and a pressure sensor according to an embodiment of the present invention.
Icon: 100-a membrane; 110-a detection circuit; 111-positive leg; 112-negative branch;
200-a separation structure;
300-a substrate; 310-a conductive structure; 320-QTC material layer.
Detailed Description
The technical solution of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
As shown in fig. 1-10, the embodiment of the present invention provides a pressure sensor, including: the diaphragm 100, the separation structure 200 and the substrate 300 are arranged in sequence from top to bottom, and the separation structure 200 is located between the diaphragm 100 and the substrate 300 and used for separating and forming a containing space between the diaphragm 100 and the substrate 300. The diaphragm 100 deforms after being pressed, and the deformation recovers after the external force is removed.
The substrate 300 is provided with multistage conductive structures 310 sequentially sleeved at intervals from inside to outside, wherein the multistage conductive structures 310 sequentially include R1, R2, R3 … … and Rn from inside to outside, and n is an integer greater than or equal to 3. In this embodiment, n is equal to 3, that is, a total of three conductive structures 310 are disposed on the substrate 300, the innermost conductive structure 310 may be a circular structure, and the outer R2 and R3 conductive structures 310 may be circular rings that are sleeved layer by layer from inside to outside. The conductive structure 310 may also be other shapes.
The conductive structure 310 is provided with a QTC material layer 320 on the top surface, the QTC material is a Quantum channel Composite (QTC for short), which is a novel force-sensitive material that has appeared on the market, and can sense the pressure and the contact area between two films, and further output a resistance value for measurement. Generally, the larger the pressure between the two sheets of film and the larger the contact area, the smaller the measured resistance value; conversely, the greater the resistance value measured.
In two adjacent conductive structures 310, the resistance of the inner conductive structure 310 is greater than the resistance of the outer conductive structure 310; the back surface of the diaphragm 100 is provided with a detection circuit 110, the detection circuit 110 is located above the multistage conductive structure 310, the diaphragm 100 is in a natural state, a gap is formed between the detection circuit 110 and the conductive structure 310, and the detection circuit 110 is not conducted; after the diaphragm 100 is pressurized, the conductive structure 310 can be connected in parallel to the detection circuit 110.
The external pressure acts on the central position of the diaphragm 100, the detection circuit 110 on the diaphragm 100 is firstly electrically connected with the R1, the depression degree of the diaphragm 100 from the center to the outer side is gradually deepened along with the gradual increase of the pressure on the diaphragm 100, the multistage conductive structure 310 is connected into the detection circuit 110 in parallel step by step, the resistance of the whole sensor is increased along with the increase of the pressure, the resistance value is changed suddenly in a grading way, and the high-sensitivity stress interval of the pressure sensor is enlarged.
The pressure sensor provided by the embodiment improves the performance of the thin film pressure sensor by using the synergistic effect of the composite coating (QTC) with the quantum transition effect and the surface effect generated by the conductive coatings with different resistance change rates after being subjected to pressure. The stress range of high sensitivity can be increased. By adding conductive structures 310 of different resistivity, the sensor appears to decrease in step-wise discontinuities as the pressure increases. Not only meets the actual requirements of the existing application, but also reduces the difficulty of integration.
The detection circuit 110 comprises a positive main line and a negative main line which are arranged at intervals, wherein the positive main line is connected with a plurality of positive branch lines 111 extending towards the negative main line, the negative main line is connected with a plurality of negative branch lines 112 extending towards the positive main line, and the positive branch lines 111 and the negative branch lines 112 are parallel and are alternately arranged one by one; the conductive structure 310 has at least one positive branch line 111 and one negative branch line 112.
The main line and the branch line of the detection circuit 110 may be made of silver or copper, and are attached to the diaphragm 100 by printing and etching, and the material of the diaphragm 100 may include PET (polyethylene terephthalate) and PI (polyimide). The positive leg 111 and the negative leg 112 form a crossover line that may cover the entirety of the conductive structure 310. After the diaphragm 100 is pressed down, at least one positive branch line 111 and one negative branch line 112 are arranged above the conductive structure 310 corresponding to the recessed position, so that the conductive structure 310 at the recessed position is connected to the positive main line and the negative main line in parallel.
In this embodiment, the number of the conductive structures 310 is three, when the diaphragm 100 is pressed by the first pressure, only the positive branch line 111 and the negative branch line 112 in the middle of the diaphragm 100 are pressed down to contact with the R1 conductive structure 310, and the R1 conductive structure 310 is connected into the detection circuit 110; as the pressure increases to a second pressure, the diaphragm 100 becomes more concave, the positive branch 111 and the negative branch 112 above R2 contact R2, and R2 is connected in parallel into the detection circuit 110; as the pressure increases to a third pressure, the degree of concavity of the diaphragm 100 increases, the positive branch line 111 and the negative branch line 112 above the R3 contact with the R3, the R3 is connected in parallel into the detection circuit 110, the positive branch line and the negative branch line gradually form a parallel resistor with the conductive structure 310 from inside to outside, so that the resistance of the whole sensor gradually changes gradually along with the increase of the pressure, and the resistance value changes gradually, so that the stress curve and the resistance value curve change into a gradient curve. Furthermore, by the design of the pure mechanism, the influence of drift of the pressure sensor material itself on the grading can be prevented. Since the graded resistance change is caused by the displacement of the diaphragm 100, there is no resistance drift to affect the practical application. It is possible to facilitate structurally controlling the pre-compression of the sensor. If the sensor has no grading effect, then there is now a slight mechanical tolerance that causes the initial resistance of the sensor to vary by orders of magnitude. When the sensor has graded resistance change, the sensor absorbs the structure tolerance under the condition of pre-pressing. The differences in pre-compression caused by the mechanism tolerances are concentrated in the first stage.
The positive main line and the negative main line are provided with arc structures protruding in a direction away from each other, and the positive branch line 111 and the negative branch line 112 are located between the two arc structures. The positive leg 111 and the negative leg 112 are conveniently arranged to better make contact with the conductive structure 310 therebelow.
The upper and lower surfaces of the separation structure 200 are attached to the membrane 100 and the substrate 300, respectively, using glue. Specifically, the separation structure 200 may be a double-sided adhesive tape, which has a certain thickness, and separates a gap with a certain thickness between the diaphragm 100 and the substrate 300 while connecting the diaphragm 100 and the substrate 300, so as to prevent the detection circuit 110 from being in erroneous contact with the conductive structure 310.
A separation unit is disposed in a gap between two adjacent conductive structures 310, and an upper end of the separation unit is connected to the diaphragm 100 and a lower end of the separation unit is connected to the substrate 300. And a more obvious grading effect is achieved. In addition, instability caused by collapse of the diaphragm 100 when the sensor sensing area is large can be prevented.
The different resistivity of the conductive structure 310 is not limited to the material itself, and the same resistivity conductive material can be used to connect different resistors to realize the graded sensing function of the sensor.
The relationship between pressure and resistance changes for different sensors vary. The resistivity or connection resistance of the annular conductive structure 310 printed on the substrate 300 may be adjusted according to different applications.
The adjustable parameters include the diameter and width of the ring of the conductive structure 310, and the setting of the parameters is mainly determined by the stylus of the pressing sensor. In the loading process of the measuring head, the contact area of the measuring head and the sensor is increased, and the pressure is increased at the same time. And calculating the relation between the pressure graded in application and the diameter of the circular ring by obtaining the relation between the deformation of the measuring head and the pressure. The resistivity is selected, typically in terms of a 10 to 100 times reduction in resistance or resistivity from center to outer ring for each ring, to achieve a significant grading effect and a large sensor pressure sensing window.
The diaphragm 100 and the substrate 300 may be identical in shape and material, facilitating mass production.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (10)
1. A pressure sensor, comprising: the diaphragm (100), the separation structure (200) and the substrate (300) are sequentially arranged from top to bottom, and the separation structure (200) is located between the diaphragm (100) and the substrate (300) and used for separating and forming an accommodating space between the diaphragm (100) and the substrate (300);
the substrate (300) is provided with multistage conductive structures (310) which are sequentially sleeved at intervals from inside to outside, wherein the multistage conductive structures (310) are sequentially R1, R2, R3 … … and Rn from inside to outside, and n is an integer greater than or equal to 3; a QTC material layer (320) is arranged on the top surface of the conductive structure (310); in two adjacent conductive structures (310), the resistance of the conductive structure (310) close to the inner side is greater than that of the conductive structure (310) close to the outer side;
a detection circuit (110) is arranged on the back surface of the diaphragm (100), the detection circuit (110) is positioned above the multistage conductive structure (310), the diaphragm (100) is in a natural state, and a gap is formed between the detection circuit (110) and the conductive structure (310) from top to bottom; the conductive structure (310) can be connected in parallel to the detection circuit (110) after the membrane (100) is subjected to pressure.
2. The pressure sensor according to claim 1, wherein the detection circuit (110) comprises a positive main line and a negative main line which are arranged at intervals, a plurality of positive branch lines (111) extending towards the negative main line are connected to the positive main line, a plurality of negative branch lines (112) extending towards the positive main line are connected to the negative main line, and the positive branch lines (111) and the negative branch lines (112) are arranged in parallel and are arranged one by one alternately;
at least one positive branch line (111) and one negative branch line (112) are arranged above the conductive structure (310).
3. A pressure sensor according to claim 2, wherein the positive main line and the negative main line each have a circular arc structure protruding away from each other, and the positive branch line (111) and the negative branch line (112) are located between the two circular arc structures.
4. The pressure sensor of claim 1, wherein the R1 is circular and the R2, R3 … …, and Rn are circular rings.
5. A pressure sensor according to claim 1, characterized in that the upper and lower surfaces of the separation structure (200) are connected with the membrane (100) and the substrate (300), respectively, with glue.
6. The pressure sensor according to claim 1, wherein a separation unit is disposed at a gap between two adjacent conductive structures (310), and the separation unit is connected to the diaphragm (100) at an upper end thereof and to the substrate (300) at a lower end thereof.
7. The pressure sensor of claim 1, wherein the resistivity of the materials forming R1, R2, R3 … …, and Rn are different from each other.
8. A pressure sensor according to claim 7, characterized in that the resistivity of the conductive structure (310) decreases gradually from the inside to the outside.
9. A pressure sensor according to claim 8, characterized in that the resistivity of two adjacent conductive structures (310) differs by a factor of 10-100.
10. A pressure sensor according to claim 1, wherein the diaphragm (100) and the substrate (300) are of the same shape and material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220266322.0U CN217084022U (en) | 2022-02-09 | 2022-02-09 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220266322.0U CN217084022U (en) | 2022-02-09 | 2022-02-09 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217084022U true CN217084022U (en) | 2022-07-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220266322.0U Active CN217084022U (en) | 2022-02-09 | 2022-02-09 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217084022U (en) |
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2022
- 2022-02-09 CN CN202220266322.0U patent/CN217084022U/en active Active
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