CN113411078A - Key module and electronic equipment - Google Patents
Key module and electronic equipment Download PDFInfo
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- CN113411078A CN113411078A CN202110632073.2A CN202110632073A CN113411078A CN 113411078 A CN113411078 A CN 113411078A CN 202110632073 A CN202110632073 A CN 202110632073A CN 113411078 A CN113411078 A CN 113411078A
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 53
- 239000002184 metal Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000001514 detection method Methods 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 239000011889 copper foil Substances 0.000 claims description 8
- 239000006260 foam Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 abstract description 27
- 239000010409 thin film Substances 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 11
- 238000003475 lamination Methods 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 210000002615 epidermis Anatomy 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000011896 sensitive detection Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
- H03K17/962—Capacitive touch switches
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/96—Touch switches
- H03K17/964—Piezoelectric touch switches
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- Push-Button Switches (AREA)
Abstract
The application discloses a key module and electronic equipment, wherein the key module comprises a metal film and a substrate, the metal film is provided with a plurality of pressure sensing modules, each pressure sensing module comprises a first resistor, a second resistor, a third resistor and a fourth resistor, and the first resistor, the second resistor, the third resistor and the fourth resistor are electrically connected to form a Wheatstone bridge; the metal film is attached to one side of the substrate, the substrate is provided with a plurality of through holes as detection channels, and each pressure sensing module corresponds to one through hole. According to the touch key module, the first resistor, the second resistor, the third resistor and the fourth resistor form a Wheatstone bridge, the through holes are used as detection channels to bear deformation of the metal thin film after touch, the thickness of the key module cannot be increased compared with that of a traditional module, and each Wheatstone bridge is matched with two voltage output lines and one reference voltage line to output the deformation of the metal thin film through voltage signals; the metal middle frame is used as a fixed polar plate for pressure-capacitance detection, the thickness of the module is not increased, and wiring can be simplified.
Description
Technical Field
The application belongs to the technical field of electronic equipment, concretely relates to button module and electronic equipment.
Background
In the rapid development process of the mobile terminal, the advantages of the hidden key are increasingly prominent, and the pressure-sensitive key module is also developed. At present, the pressure key module is applied to the side to realize corresponding functions, so as to meet various human-computer interaction requirements. Along with the increasing demand of users on the interaction function of the whole machine, the idea of combining the pressure-sensitive keys and the screen is developed, but the wiring mode of the existing key module is complex and is difficult to combine with the screen.
Disclosure of Invention
The application aims at providing a button module and electronic equipment, solves the complicated problem of traditional button module wiring.
In order to solve the technical problem, the present application is implemented as follows:
in a first aspect, an embodiment of the present application provides a key module, including a metal film and a substrate, where the metal film is provided with a plurality of pressure-sensitive modules, each pressure-sensitive module includes a first resistor, a second resistor, a third resistor, and a fourth resistor, and the first resistor, the second resistor, the third resistor, and the fourth resistor are electrically connected to form a wheatstone bridge; the metal film is attached to one side of the substrate, the substrate is provided with a plurality of through holes as detection channels, and each pressure sensing module corresponds to one through hole.
According to the key module provided by the embodiment of the application, the first resistor is electrically connected with the second resistor, a first voltage signal is generated between the first resistor and the second resistor, the third resistor is electrically connected with the fourth resistor, a second voltage signal is generated between the third resistor and the fourth resistor, the first resistor and the second resistor are arranged along a first direction, the third resistor and the fourth resistor are arranged along a second direction, and the first direction is perpendicular to the second direction.
According to the key module provided by the embodiment of the application, the substrate is a silicon plate.
According to the key module provided by the embodiment of the application, the through holes are arranged along the substrate in a square array.
According to the key module provided by the embodiment of the application, each through hole is a trapezoidal hole.
According to the key module provided by the embodiment of the application, the longer bottom in the trapezoid hole is closer to the metal film than the other bottom.
In a second aspect, an embodiment of the present application provides a key module, which is applied to an electronic device and includes an upper polar plate, a substrate and a lower polar plate, the upper polar plate is located one side of the substrate, the lower polar plate is located the other side of the substrate, the substrate is provided with a plurality of through holes as detection channels, and the lower polar plate is a metal middle frame of the electronic device.
According to the key module that this application embodiment provided, it has a plurality of regions of pressing to go up the polar plate, each press down the region and include detection zone and reference area, the detection zone is corresponding to one the through-hole and with the metal center forms detection capacitor, the reference area is located by the through-hole and with the metal center forms reference capacitor.
According to the key module provided by the embodiment of the application, the substrate is prepressing foam of the electronic equipment.
According to the key module provided by the embodiment of the application, the upper polar plate is a metal film.
According to the key module provided by the embodiment of the application, the upper polar plate is a heat dissipation copper foil of the electronic equipment.
In a third aspect, an embodiment of the present application further provides an electronic device, including the key module according to any one of the first aspects or the key module according to any one of the second aspects.
In the embodiment of the application, the thickness of the key module cannot be increased compared with that of a traditional module, the first resistor, the second resistor, the third resistor and the fourth resistor form a Wheatstone bridge, the through holes are used as detection channels to bear deformation of the metal film after touch, each Wheatstone bridge is matched with two voltage output lines and one reference voltage line, so that the deformation of the metal film can be output through voltage signals, and wiring of the whole module is simplified; and the other key module takes the metal middle frame as a fixed polar plate, detects the pressing pressure based on the pressure capacity, and further simplifies the wiring under the condition of not increasing the thickness of the module.
Additional aspects and advantages of the present application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the present application.
Drawings
The above and/or additional aspects and advantages of the present application will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural diagram of a dual steel sheet die set in the prior art; (ii) a
FIG. 2 is a block diagram of a prior art high density piezoresistive silicon wafer lamination module;
FIG. 3 is a schematic structural diagram of the pressure sensing module shown in FIG. 2;
FIG. 4 is a schematic diagram of a key module according to an embodiment of the present disclosure;
FIG. 5 is a schematic structural diagram of the pressure sensing module shown in FIG. 4;
FIG. 6 is a schematic view of the structure of the substrate shown in FIG. 4;
FIG. 7 is a schematic diagram of the Wheatstone bridge detection principle;
FIG. 8 is a front view of a single pressure sensing channel of the key module shown in FIG. 4;
FIG. 9 is a front view of a single capacitive sense channel in a conventional piezoresistive sensing scheme;
FIG. 10 is a block diagram of the single capacitive sensing channel shown in FIG. 9 when pressed;
FIG. 11 is a front view of a single capacitive sensing channel in a key module according to another embodiment of the present application;
FIG. 12 is a schematic illustration of a capacitance detection mechanism;
FIG. 13 is a front view of a single capacitive sensing channel in a key module according to yet another embodiment of the present application;
FIG. 14 is a schematic of a flat cable arrangement of the single capacitive sensing channel shown in FIG. 9;
fig. 15 is an exploded view of a key module according to still another embodiment of the present application.
Reference numerals:
10: a metal thin film; 11: a pressure sensing module; r1: a first resistor;
r2: a second resistor; r3: a third resistor; r4: a fourth resistor;
20: a substrate; 21: a through hole; 30: an upper polar plate;
40: a lower polar plate; 100: a metal middle frame; 200: pre-pressing foam;
300: a heat-dissipating copper foil.
Detailed Description
Reference will now be made in detail to embodiments of the present application, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present application and are not to be construed as limiting the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The features of the terms first and second in the description and in the claims of the present application may explicitly or implicitly include one or more of such features. In the description of the present application, "a plurality" means two or more unless otherwise specified.
Fig. 1 is a schematic structural diagram of a double-steel-disc module in the prior art, the double-steel-disc module is low in cost and simple in structure, the arrangement distance between channels is small, the sensitivity of the module is low, and the induction effect of the whole machine is difficult to guarantee. Fig. 2 is a structural diagram of a high-density piezoresistive silicon wafer lamination module in the prior art, which includes a silicon plate and a metal film 10 attached to the silicon plate, wherein the metal film 10 is provided with a plurality of pressure sensing modules, as shown in fig. 3, each pressure sensing module integrates four piezoresistive groups, and each pressure sensing module has four differential channels inside to sense pressure. According to the structure diagram of the pressure sensing module shown in fig. 3, the high-density piezoresistive silicon wafer lamination module has high sensitivity, but the overall resistance arrangement is dense, the cost is high, a plurality of groups of differential lines are needed to avoid the module channel, and the module end outgoing line is complex.
Based on this, this application proposes new button module.
The structure of the key module according to the embodiment of the present application is described below with reference to fig. 4 to 8.
As shown in fig. 4, an embodiment of the present application provides a key module, which includes a metal film 10 and a substrate 20, wherein the metal film 10 is attached to one side of the substrate 20. The metal film 10 is provided with a plurality of pressure-sensitive modules 11, as shown in fig. 5, each of the pressure-sensitive modules 11 includes a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R4. The first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 are electrically connected to form a wheatstone bridge. As shown in fig. 6, the substrate 20 is provided with a plurality of through holes 21 as the detection channels, and each pressure sensing module 11 corresponds to one through hole 21. One pressure sensing module 11 and the corresponding through hole 21 form a pressure sensing channel.
By using the metal film 10 and the substrate 20 to provide a stack, the thickness of the module is not increased compared to the high density piezoresistive silicon wafer stack module shown in fig. 2. Meanwhile, the complex resistor group is adjusted to be a Wheatstone bridge formed by the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4, the resistance value is changed according to the transverse deformation and the tangential deformation of each pressure-sensitive detection channel, and then a changed voltage output signal is obtained, and the voltage output signal is transmitted to the deformation model to detect the pressure.
According to the key module provided by the embodiment of the application, compared with the high-density piezoresistive silicon chip laminated module shown in fig. 2, the thickness of the module cannot be increased, and moreover, the wheatstone bridges formed by the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R4 can be used for detection by matching two voltage output lines and one reference voltage line, so that the difficulty of wiring of the whole module is reduced.
Specifically, the first resistor R1 and the second resistor R2 are electrically connected, a first voltage signal is generated between the first resistor R1 and the second resistor R2, the third resistor R3 and the fourth resistor R4 are electrically connected, a second voltage signal is generated between the third resistor R3 and the fourth resistor R4, the first resistor R1 and the second resistor R2 are arranged along a first direction, and the third resistor R3 and the fourth resistor R4 are arranged along a second direction, wherein the first direction is perpendicular to the second direction.
The pressure of the key module is detected based on the deformation resistor, deformation values in opposite directions of the internal resistor need to be guaranteed, and if deformation values in opposite directions cannot be generated, the deformation rate needs to be correspondingly different. According to the wheatstone bridge detection principle shown in fig. 7, R1 and R3 must be simultaneously enlarged, and R2 and R4 need to have different deformation trends relative to the enlargement of R1 and R3, so that the differential voltage can be detected at the output end.
In the formula of U0Is a reference voltage; the first resistor R1 and the second resistor R2 are electrically connected, and a first voltage signal ANN is generated between the first resistor R1 and the second resistor R2; the third resistor R3 and the fourth resistor R4 are electrically connected, and a second voltage signal ANP is generated between the third resistor R3 and the fourth resistor R4.
Corresponding to the circular through hole, the metal film forms a circular diaphragm corresponding to the circular through hole, and when the circular diaphragm bears uniform pressure q, the deformation size of the circular diaphragm can be expressed as:
wherein q is the pressure of the pressing action surface, a is the distance between the center and the farthest end of the curved surface formed by the deformation of the metal film after pressing, r is the half-value of the curved surface formed by the deformation of the metal film after pressing, and D is the bending rigidity of the circular diaphragm.
In the formula, E is Young's modulus of elasticity, h is the thickness of the circular membrane, and ν is the Poisson's ratio of the material used for the metal film.
After the pressure is pressed by the acting force with the magnitude of F, the acting force F acting on the surface of the circular diaphragm is converted into the pressure q, and the tangential deformation and the radial deformation generated on the circular diaphragm are respectively as follows:
from the above expression, it is understood that the tangential direction variable degree has a corresponding difference from the radial direction variable degree, and the difference relationship therebetween becomes larger as the pressure value increases. Therefore, the deformation resistor is placed at the tangential and radial positions of the metal film, and the Wheatstone bridge can be used for detecting the strain threshold.
Fig. 5 is a structural diagram of each pressure sensing module in the key module according to the embodiment of the present application. Each pressure-sensitive module was printed on the metal film in the manner of the resistor arrangement shown in fig. 5.
In the key module provided in the embodiment of the present application, as shown in fig. 8, the through hole 21 is disposed on the substrate 20, so as to leave a deformation space for pressing each pressure sensing module. Every time of pressing, due to the fact that deformation and the degree of strain of two tangential resistors of the first resistor R1 and the second resistor R2 and the deformation and the degree of strain of two radial resistors of the third resistor R3 and the fourth resistor R4 are different, differential output signals with different sizes can be obtained, and then the pressure is detected.
Optionally, the substrate 20 is a silicon plate. As shown in fig. 6, the plurality of through holes 21 are arranged in a square array along the substrate 20. Wherein the substrate is etched to form the through-hole 21.
The embodiment of the application also provides electronic equipment which comprises the key module. A single-layer metal film is attached to the substrate, the resistance detection mechanism based on the Wheatstone bridge detects the pressing deformation amount of each pressure-sensitive detection channel, the pressure is detected, each pressure-sensitive module only needs two differential output lines and one reference voltage input line, and wiring is simplified.
In the conventional scheme, as shown in fig. 9, metal thin films 10 are respectively disposed on the upper and lower sides of a substrate 20. When pressing, as shown in fig. 10, strain resistance R of upper epidermis and strain resistance R0 of lower epidermis take place deformation, realize pressure detection according to strain resistance R and strain resistance R0's length variation, and this scheme is thicker than the button module that this application provided, but the length relative variation value of strain resistance in the traditional scheme is bigger, and the more is also the more to corresponding original analog signal volume, and single channel sensitivity is higher.
Based on the condition that the deformation process of the key module is limited, the embodiment of the application provides another key module. The following describes a structure of a key module according to another embodiment of the present application with reference to fig. 11 to 15.
Another key module provided in the embodiment of the present application is applied to an electronic device, as shown in fig. 11, the key module includes an upper plate 30, a substrate 20, and a lower plate 40. The upper plate 30 is located on one side of the substrate 20, the lower plate 40 is located on the other side of the substrate 20, the substrate 20 is provided with a plurality of through holes 21 as detection channels, and the lower plate 40 is a metal middle frame 100 of the electronic device. The upper plate 30, the lower plate 40 and the plurality of through holes 21 form a plurality of capacitance detection channels, and each capacitance detection channel corresponds to one through hole 21.
FIG. 12 is a capacitance detection mechanism. As shown in fig. 12, the distance between the two plates is D, and when the plate members are formed to be full of charge Q, the two plates have a constant potential. The capacitive influence then depends only on:
in the formula, epsilon is the dielectric constant of the medium between the polar plates, and S is the opposite area of the two polar plates.
From the above formula, the capacitance between the plates is negatively related to the distance D and positively related to the facing area S of the plates. The magnitude of the pressing strength can be mapped by directly detecting the variable value of the space between the two polar plates by utilizing longitudinal pressing.
Compared with the key module shown in fig. 4, the key module provided by the embodiment of the application selects the metal middle frame 100 of the electronic device as the reference plate, and the thickness of the whole lamination does not need to be increased. When each channel is pressed, the metal middle frame 100 is kept as a fixed polar plate, the metal film on the substrate 20 is pressed into the through hole 21, as shown in fig. 11, the distance D1 between the valley bottom of the metal film and the metal middle frame 100 is changed before and after the key, and the pressure is determined by the changed amount.
In some embodiments, the top plate 30 has a plurality of pressing regions, each pressing region includes a detection region corresponding to a through hole and forming a detection capacitor C1 with the metal middle frame 100, and a reference region beside the through hole and forming a reference capacitor C0 with the metal middle frame 100. As shown in fig. 13, a reference capacitor C0 with a constant spacing is added to the detection capacitor C1, and the change of the capacitance before and after pressing can be derived according to the change of the spacing between the front and rear plates after pressing. The capacitance variation is:
the embodiment of the application guarantees the sensitivity of the whole module by means of the reference capacitor, and avoids the problems of zero deviation, inconsistent elastic plastic return degree and the like.
As shown in fig. 14, each detection channel only needs to be provided with two lines, namely, a detection capacitor output channel and a reference capacitor output channel, so that the wiring is further simplified, and the cost is reduced. Meanwhile, the pressure is determined by utilizing the detection capacitor and the reference capacitor, and compared with the key module shown in fig. 4, the pressing range is improved.
Generally, an electronic device includes a display layer, a control layer, a heat-dissipating copper foil 300, a pre-compressed foam 200, and a cover plate, which are sequentially stacked. Optionally, the upper plate 30 is a metal film or a heat-dissipating copper foil 300 of an electronic device. When the heat-dissipating copper foil 300 of the electronic device is used as the upper electrode plate 30, it is not necessary to add a metal thin film, which contributes to reducing the thickness of the entire laminate.
In order to reduce the thickness of the lamination, pre-pressed foam of an electronic device is used as the substrate 20, and a through hole is arranged on the pre-pressed foam 200 as a detection channel. In some embodiments, as shown in fig. 15, the pre-pressed foam 200 of the electronic device is used as the substrate 20, and the heat-dissipating copper foil 300 of the electronic device is used as the upper plate 30, so that it is not necessary to additionally provide a silicon plate as the substrate and to provide a metal film as the upper plate, and the thickness of the lamination is reduced to the maximum.
The embodiment of the application also provides electronic equipment which comprises the key module. The electronic device takes the metal middle frame 100 as a lower polar plate, based on pressure-capacitance detection pressure, compared with the structural mode of detecting pressure based on resistance of a Wheatstone bridge, the wire outgoing mode is further simplified under the condition of not increasing the number of stacked layers, the cost is reduced, high sensitivity is realized, and meanwhile, a larger pressing range is guaranteed. In addition, the electronic equipment adopts the pre-pressed foam 200 of the electronic equipment as the substrate 20 and adopts the heat-dissipating copper foil 300 of the electronic equipment as the upper electrode plate 30, thereby reducing the thickness of the whole lamination and embedding the pressure sensing function into the screen of the whole machine.
The electronic device disclosed in the embodiment of the present application may be a mobile phone, a single lens reflex camera, a monitoring camera, or the like, and certainly, the electronic device disclosed in the embodiment of the present application may also be other types of electronic devices, and the embodiment of the present application does not specifically limit the specific types of the electronic devices.
In the description herein, reference to the description of the terms "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present application have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the application, the scope of which is defined by the claims and their equivalents.
Claims (12)
1. A key module is characterized by comprising a metal film and a substrate, wherein the metal film is provided with a plurality of pressure sensing modules, each pressure sensing module comprises a first resistor, a second resistor, a third resistor and a fourth resistor, and the first resistor, the second resistor, the third resistor and the fourth resistor are electrically connected to form a Wheatstone bridge; the metal film is attached to one side of the substrate, the substrate is provided with a plurality of through holes as detection channels, and each pressure sensing module corresponds to one through hole.
2. The key module of claim 1, wherein the first resistor is electrically connected to the second resistor, a first voltage signal is generated between the first resistor and the second resistor, the third resistor is electrically connected to the fourth resistor, a second voltage signal is generated between the third resistor and the fourth resistor, the first resistor and the second resistor are arranged along a first direction, the third resistor and the fourth resistor are arranged along a second direction, and the first direction is perpendicular to the second direction.
3. The key module of claim 1 or 2, wherein the substrate is a silicon plate.
4. The key module of claim 1, wherein the plurality of through holes are arranged in a square array along the substrate.
5. The key module as claimed in claim 1, wherein each of the through holes is a trapezoidal hole.
6. The key module of claim 5, wherein the longer base of the trapezoidal hole is closer to the metal film than the other base.
7. The key module is applied to electronic equipment and is characterized by comprising an upper polar plate, a substrate and a lower polar plate, wherein the upper polar plate is located on one side of the substrate, the lower polar plate is located on the other side of the substrate, the substrate is provided with a plurality of through holes serving as detection channels, and the lower polar plate is a metal middle frame of the electronic equipment.
8. The key module of claim 7, wherein the top plate has a plurality of pressing regions, each pressing region includes a detection region and a reference region, the detection region corresponds to one of the through holes and forms a detection capacitor with the metal middle frame, and the reference region is located beside the through hole and forms a reference capacitor with the metal middle frame.
9. The key module of claim 7, wherein the substrate is pre-pressed foam of an electronic device.
10. The key module of any one of claims 7-9, wherein the top plate is a metal film.
11. The key module of any one of claims 7-9, wherein the top plate is a heat-dissipating copper foil of an electronic device.
12. An electronic device comprising the key module of any one of claims 1-6 or the key module of any one of claims 7-11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110632073.2A CN113411078A (en) | 2021-06-07 | 2021-06-07 | Key module and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110632073.2A CN113411078A (en) | 2021-06-07 | 2021-06-07 | Key module and electronic equipment |
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| CN113411078A true CN113411078A (en) | 2021-09-17 |
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| CN202110632073.2A Pending CN113411078A (en) | 2021-06-07 | 2021-06-07 | Key module and electronic equipment |
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| CN116913717A (en) * | 2023-09-13 | 2023-10-20 | 合肥联宝信息技术有限公司 | Film keyboard |
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| CN110631746A (en) * | 2019-09-23 | 2019-12-31 | 维沃移动通信有限公司 | Pressure detection assembly, detection method and terminal |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114217704A (en) * | 2021-12-28 | 2022-03-22 | 维沃移动通信有限公司 | Electronic device |
| CN114217704B (en) * | 2021-12-28 | 2024-05-28 | 维沃移动通信有限公司 | Electronic equipment |
| CN116913717A (en) * | 2023-09-13 | 2023-10-20 | 合肥联宝信息技术有限公司 | Film keyboard |
| CN116913717B (en) * | 2023-09-13 | 2023-11-28 | 合肥联宝信息技术有限公司 | Film keyboard |
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