CN217035619U - 功率半导体模块封装结构 - Google Patents
功率半导体模块封装结构 Download PDFInfo
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- CN217035619U CN217035619U CN202220225582.3U CN202220225582U CN217035619U CN 217035619 U CN217035619 U CN 217035619U CN 202220225582 U CN202220225582 U CN 202220225582U CN 217035619 U CN217035619 U CN 217035619U
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- wafer
- cooling
- power semiconductor
- substrate
- semiconductor module
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 44
- 238000004806 packaging method and process Methods 0.000 title abstract description 15
- 235000012431 wafers Nutrition 0.000 claims abstract description 98
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims description 74
- 238000005192 partition Methods 0.000 claims description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 239000003507 refrigerant Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 8
- 125000005647 linker group Chemical group 0.000 claims description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 7
- 238000000034 method Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 241000561734 Celosia cristata Species 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 210000001520 comb Anatomy 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202220225582.3U CN217035619U (zh) | 2022-01-27 | 2022-01-27 | 功率半导体模块封装结构 |
Applications Claiming Priority (1)
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CN202220225582.3U CN217035619U (zh) | 2022-01-27 | 2022-01-27 | 功率半导体模块封装结构 |
Publications (1)
Publication Number | Publication Date |
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CN217035619U true CN217035619U (zh) | 2022-07-22 |
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Family Applications (1)
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CN202220225582.3U Active CN217035619U (zh) | 2022-01-27 | 2022-01-27 | 功率半导体模块封装结构 |
Country Status (1)
Country | Link |
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CN (1) | CN217035619U (zh) |
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2022
- 2022-01-27 CN CN202220225582.3U patent/CN217035619U/zh active Active
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240608 Address after: Room 601-2, Building 1, Suzhou Nanocity, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215000 Patentee after: Suzhou Liangxin Microelectronics Co.,Ltd. Country or region after: China Address before: 215021 room 601-1, building 1, Suzhou nano City, No. 99 Jinjihu Avenue, Suzhou Industrial Park, Suzhou, Jiangsu Province Patentee before: Suzhou Quantum Semiconductor Co.,Ltd. Country or region before: China |