CN216982140U - Semiconductor electrothermal film heater with electrostatic discharge structure - Google Patents
Semiconductor electrothermal film heater with electrostatic discharge structure Download PDFInfo
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- CN216982140U CN216982140U CN202220723668.9U CN202220723668U CN216982140U CN 216982140 U CN216982140 U CN 216982140U CN 202220723668 U CN202220723668 U CN 202220723668U CN 216982140 U CN216982140 U CN 216982140U
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- electrothermal film
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- electrostatic discharge
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Abstract
The utility model relates to a semiconductor electrothermal film heater with an electrostatic discharge structure. The semiconductor electrothermal film and the electrode are processed on the substrate, the characteristic that the semiconductor electrothermal film is electrified to uniformly heat is utilized, the electric heating effect is achieved, the advantages of good heating effect and high electric heat conversion rate are achieved, the grounding electrode designed on the substrate can be connected with the grounding lead, and can also be connected with the grounding lead through the grounding wiring hole, so that static electricity generated on the substrate can be effectively released, the use safety is guaranteed, and compared with a traditional electrothermal wire heater, the energy-saving electrothermal wire heater is more energy-saving, higher in safety, high in heating efficiency and convenient to popularize and apply.
Description
Technical Field
The utility model relates to the technical field of electric heating devices, in particular to a semiconductor electrothermal film heater with an electrostatic discharge structure.
Background
The semiconductor nano electrothermal film is a new generation of heating material. The heating mode of the heating wire is different from that of the traditional metal resistance wire. The high-voltage alternating current and direct current power supply has zero inductive reactance, generates heat by pure resistance, can accept 1V-1000V voltage input, does not divide a power supply into positive and negative, and can be used by alternating current and direct current. And the traditional linear heating form is broken through by surface heating, the heat transfer effect is good, and the electrothermal conversion efficiency is high: 80% -97%, has better energy-saving advantage. The coating has the physical and chemical properties of acid and alkali corrosion resistance, oxidation resistance, flame retardance, moisture resistance, high film hardness, no toxicity, no harmful radiation, no pollution and the like, and the film can be damaged only by polishing with hardness higher than that of carborundum.
The semiconductor electric heating film can share the same total power on the surface area of the base body of the whole heater, the heating temperature per unit area is far lower than that of the resistance wire, but the total heat energy generated exceeds that of the resistance wire, and the heating efficiency is good, so that the semiconductor electric heating film can be used as an electric heater and has a good application scene. However, during the high-temperature heating process, the dry dust impurity particles rub against the substrate to generate static electricity on the substrate, so that potential safety hazards are brought to the electric heater.
SUMMERY OF THE UTILITY MODEL
In view of the problems in the prior art, the utility model discloses a semiconductor electrothermal film heater with an electrostatic discharge structure, which comprises a base body, wherein a semiconductor electrothermal film is plated on the front surface of the base body, electrothermal film electrodes are fixedly connected to two sides of the semiconductor electrothermal film, the electrothermal film electrodes are electrically connected with the semiconductor electrothermal film, a grounding electrode is fixedly connected to the lower part of the semiconductor electrothermal film on the base body, the grounding electrode is not connected with the semiconductor electrothermal film and the electrothermal film electrodes, a grounding wiring hole is formed in the back surface of the base body, and the grounding wire can be connected into the grounding wiring hole through a screw.
In a preferred embodiment of the present invention, the substrate is made of a material having high temperature resistance, such as ceramic, glass, silicon carbide, or the like, or a high temperature-resistant metal having been subjected to insulation treatment.
As a preferable scheme of the utility model, the semiconductor electrothermal film is coated on the base body in a high-temperature environment and is connected with the base body into a whole.
As a preferred scheme of the utility model, the electric heating film electrode and the grounding electrode are made of silver paste and are processed on the substrate after silk-screen printing and high-temperature sintering, the electric heating film electrode can be electrified after being connected with a power supply, and the grounding electrode is welded with a lead wire, so that the static electricity on the substrate can be released.
The utility model has the beneficial effects that: the utility model processes the semiconductor electrothermal film and the electrode on the base body, has the function of electric heating by utilizing the characteristic that the semiconductor electrothermal film is electrified to uniformly heat, has the advantages of good heating effect and high electric heat conversion rate, and the grounding electrode designed on the base body can be connected with the grounding lead and can also be connected with the grounding lead through the grounding wiring hole, thereby effectively releasing the static generated on the base body and ensuring the use safety.
Drawings
FIG. 1 is a schematic front view of the overall structure of the present invention;
fig. 2 is a reverse schematic view of the overall structure of the present invention.
In the figure: 1 basal body, 2 semiconductor electrothermal film, 3 electrothermal film electrode, 4 grounding electrode, 5 grounding wiring hole.
Detailed Description
Example 1
As shown in fig. 1 to 2, the semiconductor electrothermal film heater with electrostatic discharge structure of the present invention comprises a substrate 1 made of insulating high temperature resistant material such as ceramic, glass, silicon carbide or insulating treated high temperature resistant metal, a semiconductor electrothermal film 2 plated on the front surface of the substrate 1, the semiconductor electrothermal film 2 coated on the substrate 1 in high temperature environment and connected with the substrate 1 into a whole, electrothermal film electrodes 3 fixedly connected to both sides of the semiconductor electrothermal film 2, the electrothermal film electrodes 3 electrically connected to the semiconductor electrothermal film 2, a grounding electrode 4 fixedly connected to the substrate 1 at the lower part of the semiconductor electrothermal film 2, the grounding electrode 4 not connected to the semiconductor electrothermal film 2 and the electrothermal film electrodes 3, the electrothermal film electrodes 3 and the grounding electrode 4 both processed on the substrate 1 by silver paste screen printing and high temperature sintering, the circular telegram to semiconductor electric heat membrane 2 can be realized to electric heat membrane electrode 3 after connecting the connection power, welds the wire on telluric electricity field 4, and the wire connects on the shell body of heater, alright realize the release to the static on base member 1, ground connection wiring hole 5 has been seted up to the base member 1 back, can connect the earth connection in ground connection wiring hole 5 through the screw, can be connected to the completion ground connection on the shell body of heater equally, the electrostatic discharge of being convenient for.
The working principle of the utility model is as follows: the heater is arranged in the outer shell, the electric heating film electrode 3 is connected with a power line, if the temperature of the heater is between minus 20 ℃ and 180 ℃, the grounding wire is connected with the grounding electrode 4 through tin soldering, the power line is connected with an external power supply, the semiconductor electric heating film 2 can be heated after the power is switched on, and the static electricity generated on the base body 1 can be released on the outer shell connected with the grounding wire. If the temperature of the heater is higher than 180 ℃ or in an ultralow temperature environment, the grounding wire can be fixedly connected in the grounding wire hole 5 in a screw or fixing buckle mode, and the effect of releasing static electricity on the base body 1 can also be achieved.
Portions and circuit connections not described in detail herein are prior art.
Although the present invention has been described in detail with reference to the specific embodiments, the present invention is not limited to the above embodiments, and various changes and modifications without inventive changes may be made within the knowledge of those skilled in the art without departing from the spirit of the present invention.
Claims (4)
1. The semiconductor electrothermal film heater with the electrostatic discharge structure is characterized by comprising a base body (1), wherein a semiconductor electrothermal film (2) is plated on the front surface of the base body (1), electrothermal film electrodes (3) are fixedly connected to the two sides of the semiconductor electrothermal film (2), the electrothermal film electrodes (3) are electrically connected with the semiconductor electrothermal film (2), a grounding electrode (4) is fixedly connected to the base body (1) at the lower part of the semiconductor electrothermal film (2), and a grounding wiring hole (5) is formed in the back surface of the base body (1).
2. The semiconductor electrothermal film heater with the electrostatic discharge structure of claim 1, wherein: the substrate (1) is made of one of insulating high-temperature-resistant ceramics, glass, silicon carbide and insulating-treated high-temperature-resistant metal materials.
3. The semiconductor electrothermal film heater with the electrostatic discharge structure of claim 1, wherein: the semiconductor electrothermal film (2) is coated on the substrate (1) in a high-temperature environment.
4. The semiconductor electrothermal film heater with the electrostatic discharge structure of claim 1, wherein: the electrothermal membrane electrode (3) and the grounding electrode (4) are made of silver paste and are processed on the substrate (1) through silk-screen printing and high-temperature sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220723668.9U CN216982140U (en) | 2022-03-30 | 2022-03-30 | Semiconductor electrothermal film heater with electrostatic discharge structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220723668.9U CN216982140U (en) | 2022-03-30 | 2022-03-30 | Semiconductor electrothermal film heater with electrostatic discharge structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216982140U true CN216982140U (en) | 2022-07-15 |
Family
ID=82339744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220723668.9U Active CN216982140U (en) | 2022-03-30 | 2022-03-30 | Semiconductor electrothermal film heater with electrostatic discharge structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216982140U (en) |
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2022
- 2022-03-30 CN CN202220723668.9U patent/CN216982140U/en active Active
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