CN2168235Y - Photoelecto receiving device of second-imaging - Google Patents
Photoelecto receiving device of second-imaging Download PDFInfo
- Publication number
- CN2168235Y CN2168235Y CN 93216877 CN93216877U CN2168235Y CN 2168235 Y CN2168235 Y CN 2168235Y CN 93216877 CN93216877 CN 93216877 CN 93216877 U CN93216877 U CN 93216877U CN 2168235 Y CN2168235 Y CN 2168235Y
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- photoelectric
- utility
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- light target
- imaging
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- 238000003384 imaging method Methods 0.000 title abstract description 7
- 238000012634 optical imaging Methods 0.000 claims abstract description 4
- 239000002344 surface layer Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 239000005304 optical glass Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 abstract description 7
- 238000006073 displacement reaction Methods 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000386 athletic effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 230000005622 photoelectricity Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The utility model belongs to the technical field of photoelectric detection. The utility model works out a photoelectric receiving device of second-imaging, which is composed of a scattered light target, an optical imaging lens and a photoelectric position sensor in sequence of cross spread on the same axial line. The device can use the present small-scale photoelectric sensing device to work out a large size light target for meeting the actual needs and the utility model can meet a variety of needs of the photoelectric detection field. The utility model has the advantages of simple structure, low cost, favorable optical switching efficiency and favorable capability of resisting disturbance. Continuous high-precision detection of the displacement change of measured objects can be realized.
Description
The utility model belongs to photoelectric detection technology field, particularly the Photoelectric Detection receiving trap.
Photoelectric detecting technology has been widely used in various fields at present, and for example in athletic training, military training and a lot of engineering survey work, (or displacement) situation that need collimate measurand is accurately measured.Be that beam launcher and measurand are fixed together, can launch parallel beam continuously through focusing on, this light beam irradiates forms hot spot to the light target of receiving trap, and convert the position of hot spot to the electric signal relevant with the position, can obtain change in location (displacement) situation of measurand again through signal Processing.
Prior art receives mainly in the following ways the photoelectricity of measurand displacement detecting: thus the hot spot that (a) adopts TV camera that the light beam that is sent by emitter is formed on target is taken and is write down this point and rock situation, isolate the position from TV signal then, the equipment complexity of this method, can not in time feed back measurement result, and precision is relatively poor; (b) directly form light target with photoelectric device, the facula position that light beam is formed on target carries out record.It can be divided into two kinds of continous way and arrays according to the photoelectric device difference of use again, and continous way is to adopt planar photoelectric device to constitute light target, therefore requires the area of photoelectric device bigger; Array is to adopt a plurality of point-like photoelectric device dense arrangement to constitute light target, by encoded recording hot spot rocking on target, needs a lot of devices in order to obtain bigger light target like this.
The purpose of this utility model is to overcome the deficiency of prior art photoelectric receiving arrangement, design a kind of photoelectric receiving arrangement of secondary imaging, utilize less photoelectric receiving device to receive the situation of change of inner light beam position in a big way, make device have advantages such as volume is little, cost is low, and is applied widely.
The utility model is designed a kind of photoelectric receiving arrangement, it is characterized in that by the scattering light target 1 of perpendicular array, optical imaging lens 2 and photoelectrical position sensor 3 are formed successively on same axis, distance between said light target, lens, the sensor is respectively u, v, and satisfied with focal length of lens f:
1/ (u)+1/ (v)=1/ (f), and establish u＞2f.
By rationally choosing u, v, the value of f can utilize existing small size optoelectronic sensor to design the large scale light target that corresponds to actual needs, and realizes that the small size photoelectric sensor receives the situation of change of measurand position in a big way.
The utility model is designed a kind of ABSORPTION AND SCATTERING formula optical imaging screen as light target, has high conversion rate and good accuracy to satisfy receiving beam.
Light target described in the utility model is coated with anti-reflection surface layer 13 by optical glass substrate 12 at this substrate front surface, and its rear surface is made scattering surface layer 14 and constituted.In order to guarantee its conversion efficiency, substrate should be selected the optical glass high to the specific wavelength transmitance of used light source for use, for example, when light source selects for use centre wavelength to be the infrared laser of 930mm, can select near infrared cut-off type glass, as HB820 etc.If select for use the red laser pipe do light source then should select the penetrating characteristic of ruddiness good and to the glass of other wavelength attenuation.Like this, guaranteed high conversion rate on the one hand, also made light target have the ability of anti-interference of stray light preferably simultaneously.In order further to improve the conversion efficiency and the antijamming capability of target surface, be coated with suitable film system in the place ahead of optical glass substrate, its effect has two; Being anti-reflection on the one hand, is that parasitic light is decayed on the other hand, and these two effects are to reach by material and thickness that the choose reasonable film is.Above-mentioned two layers of material makes target surface possess good absorption characteristic, can be for incident light is converted to by the pointolite of optical lens imaging, incident light need be carried out scattering, prepare the scattering surface layer at the rear of optical glass for this reason, can adopt general glass frosting technology or laser frosted to make frosting.The characteristic of desirable scattering surface layer is can be with the complete scattering of incident light, forms pointolite, and therefore CONTROL PROCESS subtly when preparation scattering surface layer makes the scattering surface layer have fully thin stochastic distribution structure.
Photoelectric receiving device described in the utility model adopts any photoelectric device that can detect the hot spot coordinate, as the CCD device, and four-quadrant device or photovoltaic array etc.For further improving the precision of photodetector system, preferably adopt the photoelectric sensor of continuous type, as the semiconductor silicon optical device.Photoelectric receiving device should be placed on the position that its photosurface just in time overlaps with the imaging surface of light target scattering hot spot.
The utility model has realized utilizing existing less photoelectric receiving device to be received in the change in location situation of interior tested light beam in a big way.The light target of this device has good conversion efficiency and antijamming capability, and the continuous type optoelectronic sensor of selecting for use can guarantee the accuracy of detection of whole photodetector system to the measurand displacement.This apparatus structure is simple, and is with low cost, can be used among the photoelectric displacement detection system in various fields.
Brief Description Of Drawings:
Fig. 1 forms synoptic diagram for the utility model
Fig. 2 is a light target structural drawing of the present utility model
Fig. 3 is an embodiment overall construction drawing of the present utility model
The utility model is designed a kind of secondary imaging photoelectric receiving arrangement embodiment, and general structure is made up of trumpet type receiving basin 34 and support 35 as shown in Figure 3.The big end of receiving basin is installed light target 31, small end is installed a continuous type photoelectric sensor 33, on the axis of light target and the formation of photoelectric sensor photosurface, an optical lens 32 is installed, light target is u=10v with the photoelectric sensor photosurface to lens distance v ratio to lens distance u, photoelectric sensor photosurface diameter is 10mm, the light target diameter is 100mm, and focal length of lens f is 25mm.
Claims (2)
1, a kind of photoelectric receiving arrangement, it is characterized in that by the scattering light target 1 of perpendicular array, optical imaging lens 2 and photoelectrical position sensor 3 are formed successively on same axis, distance between said light target, lens, the sensor is respectively u, v, and satisfied with focal length of lens f:
1/ (u)+1/ (v)=1/ (f), and establish u＞2f;
2, photoelectric receiving arrangement according to claim 1 is characterized in that described light target by the optical glass substrate, is coated with anti-reflection surface layer at this substrate front surface, and its rear surface is made the scattering surface layer and constituted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93216877 CN2168235Y (en) | 1993-06-30 | 1993-06-30 | Photoelecto receiving device of second-imaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 93216877 CN2168235Y (en) | 1993-06-30 | 1993-06-30 | Photoelecto receiving device of second-imaging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN2168235Y true CN2168235Y (en) | 1994-06-08 |
Family
ID=33796935
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 93216877 Expired - Fee Related CN2168235Y (en) | 1993-06-30 | 1993-06-30 | Photoelecto receiving device of second-imaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN2168235Y (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004106850A1 (en) * | 2003-06-01 | 2004-12-09 | Zhiyong Xie | Photoelectric sensor |
| CN106595478A (en) * | 2016-12-09 | 2017-04-26 | 北京无线电计量测试研究所 | Light spot position detector |
-
1993
- 1993-06-30 CN CN 93216877 patent/CN2168235Y/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004106850A1 (en) * | 2003-06-01 | 2004-12-09 | Zhiyong Xie | Photoelectric sensor |
| CN106595478A (en) * | 2016-12-09 | 2017-04-26 | 北京无线电计量测试研究所 | Light spot position detector |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |