CN216750642U - Light-emitting lattice based on VCSEL - Google Patents
Light-emitting lattice based on VCSEL Download PDFInfo
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- CN216750642U CN216750642U CN202220308075.6U CN202220308075U CN216750642U CN 216750642 U CN216750642 U CN 216750642U CN 202220308075 U CN202220308075 U CN 202220308075U CN 216750642 U CN216750642 U CN 216750642U
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Abstract
The utility model relates to the field of signal detection, in particular to a light-emitting dot matrix based on a VCSEL (vertical cavity surface emitting laser), which mainly comprises a VCSEL light-emitting substrate and a plurality of light-emitting points arranged on the VCSEL light-emitting substrate, wherein the light-emitting points comprise at least two different current thresholds, at least two different light-emitting powers and at least two different light-emitting areas. The utility model breaks through the ultrahigh requirements of VCSEL uniformity and consistency in the conventional scheme, simplifies the manufacture of the VCSEL, breaks through the mode of identifying only by means of structural light or TOF characteristics in the conventional scheme, increases more available identification elements, and ensures that the pattern detection mode is more diversified, the information degree is higher and the identification is simpler and easier.
Description
Technical Field
The utility model relates to the field of signal detection, in particular to a light-emitting lattice based on a VCSEL.
Background
Laser radar (Light Detection And Ranging, abbreviated as LiDAR) is an optical remote sensing technology for acquiring relevant information of a target by detecting the characteristics of scattered Light of the remote target. The laser radar is a product of combining the traditional radar technology and the modern laser technology, uses a laser beam as an information carrier, and can carry information by using the amplitude, the phase, the polarization and the frequency of light. Compared with the conventional microwave radar, the laser radar can obtain higher resolution and detect a finer target object.
At present, in many applications such as traditional automobiles, autonomous vehicles, unmanned aerial vehicles, and the like, the lidar technology can be utilized to improve the performance and safety of automobiles, serve more industrial processes, and add new functions and features to consumer products. However, there are several challenges that prevent the traditional lidar architecture from being a cost-effective solution and the possibility of large-scale application and promotion.
The trend in radar development is necessarily higher integration and lower cost. Currently, the footprint of LiDAR systems may be reduced by using an appropriate Vertical Cavity Surface Emitting Laser (VCSEL) illuminator. The VCSEL laser can be placed on a microchip of only a few millimeters in size. This technique can substantially reduce the overall footprint of a LiDAR system while still providing high power in the eye-safe range to illuminate the entire field of view.
The current detection scheme based on the VCSEL is basically developed around the structured light and the TOF, but the image processing system of the structured light is complex, the accuracy of the TOF still needs to be improved, and in either way, the number of image feature elements available for extraction is limited, the requirement for future image identification will be higher and higher, the information requirement of physical elements to be detected is more and more, therefore, more detection elements are sought, the manufacturing is simpler, and the detection scheme with high implementation possibility is more important.
In view of this, how to overcome the defects of the prior art and solve the problem that the number of image feature elements available for extraction is small is an urgent problem to be solved in the art.
SUMMERY OF THE UTILITY MODEL
In view of the above drawbacks or needs for improvement in the prior art, the present invention provides a VCSEL-based light emitting dot matrix, which is designed to include light emitting dots with different thresholds, and the different light emitting dots support the structured light mode arrangement and the regular arrangement under the TOF condition, so that the elements available for the entire image recognition system include the current threshold difference of the light emitting dots, the power difference of the light emitting dots, the coordinate difference of the light emitting dots (in the structured light mode and the TOF mode), and the pattern difference of light formed after matching with the current threshold. By adding more available recognition elements, the pattern detection mode is more diversified.
The embodiment of the utility model adopts the following technical scheme:
the utility model provides a light-emitting lattice based on a VCSEL (vertical cavity surface emitting device), which comprises a VCSEL light-emitting substrate and a plurality of light-emitting points arranged at different positions on the VCSEL light-emitting substrate, wherein: the light emitting point includes at least two different current thresholds, at least two different light emitting powers, and at least two different light emitting areas.
Furthermore, the luminous point comprises at least two light-emitting table tops with different sizes, and the light-emitting table tops with different sizes form different light-emitting areas of the luminous point.
Furthermore, different current thresholds of the light emitting points are formed after the light emitting table surfaces with different sizes are oxidized for the same time.
Further, the smaller the light-emitting table surface is, the smaller the current threshold of the light-emitting point is, and when the light-emitting table surface emits light, the light-emitting point with the smaller current threshold is lighted up earlier than the light-emitting point with the larger current threshold.
Furthermore, different luminous powers of the luminous points form different light spot brightness, and light spot brightness formed by luminous points with larger luminous power is larger.
Further, all light emitting points on each VCSEL light emitting substrate are controlled by the same drive.
Further, the light emitting points are regularly or irregularly distributed on the VCSEL light emitting substrate.
Preferably, the light emitting points are regularly distributed on the VCSEL light emitting substrate as a whole, and the light emitting points of each group having the same current threshold are also regularly distributed on the VCSEL light emitting substrate.
Preferably, the light emitting points are regularly distributed on the VCSEL light emitting substrate as a whole, and the light emitting points of each group having the same current threshold are irregularly distributed on the VCSEL light emitting substrate.
Preferably, the light emitting points are distributed irregularly on the VCSEL light emitting substrate as a whole, and the light emitting points of each group having the same current threshold are also distributed irregularly on the VCSEL light emitting substrate.
Compared with the prior art, the embodiment of the utility model has the beneficial effects that: the VCSEL is specially designed, so that a light emitting dot matrix of the VCSEL is composed of light emitting points with different current thresholds, different light emitting points support structured light mode arrangement and regular arrangement under the TOF condition, and have different light emitting powers and different light emitting positions, and elements available for the whole image recognition system comprise current threshold difference of the light emitting points, power difference of the light emitting points, coordinate difference of the light emitting points (under the structured light mode and the TOF mode) and light pattern difference formed after the light emitting points are matched with the current thresholds. According to the scheme of the utility model, more available identification elements are added, so that the pattern detection mode is more diversified, the information degree is higher, and the identification is simpler and easier. In addition, the utility model also breaks the ultrahigh requirements of VCSEL uniformity and consistency in the conventional scheme, and simplifies the manufacture of the VCSEL.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a VCSEL-based light emitting lattice according to an embodiment of the present invention;
fig. 2 is a sequence diagram of the pattern of the light spots on the current axis when the total light-emitting points and the light-emitting points of the same elements are regularly distributed according to the embodiment of the present invention;
FIG. 3 is a sequence diagram of patterns of light spots on a current axis when the total light-emitting points are regularly distributed and the light-emitting points of the same elements are irregularly distributed according to the embodiment of the present invention;
fig. 4 is a sequence diagram of the patterns of the light spots on the current axis when the total light-emitting points and the light-emitting points of the same elements are irregularly distributed according to the embodiment of the utility model.
Detailed Description
In the description of the present invention, the terms "inner", "outer", "longitudinal", "lateral", "upper", "lower", "top", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are for convenience only to describe the present invention without requiring the present invention to be necessarily constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, an embodiment of the utility model provides a VCSEL-based light emitting lattice, which includes a VCSEL light emitting substrate 1 and a plurality of light emitting points 2 disposed at different positions on the VCSEL light emitting substrate 1, wherein the light emitting points 2 include at least two different current thresholds, at least two different light emitting powers, and at least two different light emitting areas. With the above design, the different positions of the light-emitting points 2 can add available coordinate difference elements to the whole image recognition system; different settings of the current threshold may add an available threshold difference element to the overall image recognition system; different settings of the luminous power may add an available power difference element to the overall image recognition system; correspondingly, in the case that the coordinate difference and the current threshold value difference exist, the finally formed light spot pattern also has the difference, so that the available pattern difference element can be added to the whole image recognition system. The above different elements enable the present embodiment to have more available identification elements compared to the prior art, so that the pattern detection mode is more diversified, the information degree is higher, and the identification is easier.
In the preferred embodiment, the light emitting point 2 includes at least two light emitting mesas with different sizes, and the light emitting mesas with different sizes form different light emitting areas of the light emitting point 2. For the design of the present embodiment, each light emitting point 2 is designed to emit light by designing one light emitting mesa, and each light emitting mesa is designed differently according to needs, and the light emitting mesa represented by the light emitting point 2 shown in fig. 1 has four kinds of light emitting mesas from small to large (for example, the diameters are 20 μm, 30 μm, 40 μm, and 80 μm, the sizes are only examples, and can be set by oneself according to needs), and the smaller the light emitting area formed by the light emitting mesa is, the smaller the light emitting area is, and vice versa. It should be noted that the design of the light-emitting mesa in four sizes is only an example, and it is possible to design the light-emitting mesa in two, three or more sizes as required.
In the preferred embodiment, the different current thresholds of the light emitting points 2 are formed after the same oxidation time of the light emitting mesas with different sizes. For the manufacturing process of the VCSEL in this embodiment, the control of the current threshold value is realized by the size difference of the light emitting mesas, specifically, in this embodiment, the oxidation time of different light emitting mesas is the same under the same oxidation condition, so that different current threshold values are realized for different light emitting points 2.
In the preferred embodiment, after the different current thresholds of the different light-emitting points 2 are formed in the above manner, the smaller the current threshold of the light-emitting point 2 with the smaller light-emitting mesa is, the light-emitting point 2 with the smaller current threshold lights up earlier than the light-emitting point 2 with the larger current threshold when emitting light. Also taking the light-emitting points 2 of the light-emitting mesa of four sizes shown in fig. 1 as an example, the light-emitting point 2 with the smallest area of the light-emitting mesa will light up when reaching the minimum current threshold, and then as the current increases, the other three light-emitting points 2 with the larger area of the light-emitting mesa will light up in sequence according to the current threshold from small to large (i.e. the light-emitting mesa area from small to large).
In the preferred embodiment, the different light emitting powers of the light emitting points 2 form different spot brightness, and the light emitting point 2 with the higher light emitting power forms a larger spot brightness. By the difference of the luminous power, different brightness differences can be formed after the overall pattern is completely lightened, and available brightness difference elements can be added to the whole image recognition system.
In the preferred embodiment, all the light emitting points 2 on each VCSEL light emitting substrate 1 are controlled by the same drive. The driving may supply a current to all the light emitting points 2 to operate all the light emitting points 2. The driving may control the current to a certain fixed level so that the light emitting dots 2 form a certain pattern, or may adjust the current so that the light emitting dots 2 form different patterns according to the change of the current.
In the preferred embodiment, the light emitting points 2 may be regularly distributed or irregularly distributed on the VCSEL light emitting substrate 1, such that the pattern formed by the light emitting points 2 is a regular pattern when the light emitting points are regularly distributed, and the pattern formed by the light emitting points 2 is an irregular pattern when the light emitting points are irregularly distributed.
As shown in fig. 2 (the left side of the arrow is a schematic diagram of the light emitting dot matrix, and the right side of the arrow is a sequential diagram of the pattern of the light emitting dot matrix on the current axis), in a specific embodiment of the present preferred embodiment, the light emitting dots 2 are distributed on the VCSEL light emitting substrate 1 in a regular manner, and the light emitting dots 2 with the same current threshold are distributed on the VCSEL light emitting substrate 1 in a regular manner. The scheme includes light-emitting points 2 with two current thresholds, that is, light-emitting mesas with two areas (for example, the diameters are 40 μm and 80 μm respectively, the sizes are only examples, and can be set as required), the two light-emitting mesas are uniformly arranged along a row-type rule, and a row of light-emitting mesas with a small area is arranged between every two rows of light-emitting mesas with a large area. The regular pattern formed by this embodiment is not limited to the regular pattern shown in the figure, and may be any regular pattern such as a triangle, a polygon, or a circle. In addition, in addition to grouping the light-emitting points 2 by using the difference element of the current threshold, it is also possible to group the light-emitting points 2 by using other difference elements to set the regular pattern according to the other difference elements. In addition, this embodiment is not limited to the light emitting points 2 of two current thresholds, and may be three or any number of them.
As shown in fig. 3 (the left side of the arrow is a schematic diagram of the light-emitting dot matrix, and the right side of the arrow is a sequential diagram of the pattern of the light-emitting dot matrix on the current axis), in another embodiment of the preferred embodiment, the light-emitting dots 2 are distributed regularly on the VCSEL light-emitting substrate 1 as a whole, and the light-emitting dots 2 with the same current threshold value in each group are distributed irregularly on the VCSEL light-emitting substrate 1. Specifically, the scheme includes light emitting points 2 with four current thresholds, that is, light emitting mesas with four areas (for example, the diameters are 20 μm, 30 μm, 40 μm, and 80 μm, and the sizes are only examples and can be set according to needs), the four light emitting mesas are arranged regularly along a row, but the light emitting mesas with each area are arranged irregularly, and under the design of the scheme, one light emitting mesa with the smallest area (that is, one light emitting point 2 with the smallest current threshold) is firstly lighted on a current axis, then a second small light emitting mesa is lighted on the current axis, then a third small light emitting point is lighted, and finally all the light emitting mesas are lighted. Because each light-emitting mesa is independently the reason of irregular arrangement, the patterns formed when the stages are lighted are different, namely, pattern difference elements exist. The scheme is based on the fusion of a TOF scheme and a structured light scheme which are generally regularly arranged but different current threshold light-emitting points 2 are irregularly arranged, and can simultaneously show various structured light patterns on a current axis. The scheme comprises a plurality of threshold light emitting table surfaces, and simultaneously, a plurality of pattern element information which can be identified can be obtained through different arrangements. It should be noted that the regular pattern formed by the whole scheme is not limited to the regular pattern in the form of a line in the figure, but may be any regular pattern such as a triangle, a polygon, a circle, etc., and the irregular pattern formed by each light emitting mesa is not limited to the pattern in the figure, but may be any irregular pattern. In addition, this embodiment is not limited to the light emitting points 2 of four current thresholds, and may be two, three, or any number of them.
As shown in fig. 4 (the left side of the arrow is a schematic diagram of the light emitting dot matrix, and the right side of the arrow is a sequential diagram of the pattern of the light emitting dot matrix on the current axis), in another embodiment of the preferred embodiment, the light emitting dots 2 are distributed irregularly on the VCSEL light emitting substrate 1 as a whole, and the light emitting dots 2 with the same current threshold value in each group are also distributed irregularly on the VCSEL light emitting substrate 1. Specifically, the scheme includes light emitting points 2 with three current thresholds, that is, light emitting mesas with three areas (for example, the diameters are 20 μm, 80 μm, and 100 μm, and the sizes are only examples and can be set according to needs), the three light emitting mesas are arranged in an irregular manner on the whole, and the light emitting mesas with each area are also arranged in an irregular manner. The scheme is based on a step-by-step structured light mode, which has a plurality of light-emitting mesas with different threshold values, and the mesas are irregularly arranged and show different structured light patterns on a current axis. It should be noted that the irregular patterns formed by the entire scheme and the irregular patterns formed by each light exit mesa are not limited to the patterns shown in the figures, but may be any irregular patterns. In addition, this embodiment is not limited to the light emitting points 2 of three current thresholds, and may be two, four, or any number of them.
The above 3 schemes are only brief examples of the present invention, and it is not limited that the present invention has only these 3 schemes, and in actual application, the complexity of the design scheme can be selected according to different scene needs, the size of the light emitting table top can be changed, and the number of types and layout of different light emitting table tops can be designed, so as to achieve the acquisition of the identification information.
In summary, in the embodiments of the present invention, the VCSEL is specially designed, so that the light emitting lattice thereof is composed of light emitting points with different current thresholds, and the different light emitting points support the structured light mode arrangement and the regular arrangement under the TOF condition, and have different light emitting powers and different light emitting positions, so that the elements available for the entire image recognition system include the current threshold difference of the light emitting points, the power difference of the light emitting points, and the coordinate difference of the light emitting points in the structured light mode and the TOF mode, and the light pattern difference formed after the light emitting points are matched with the current thresholds. According to the scheme of the utility model, more available identification elements are added, so that the pattern detection mode is more diversified, the information degree is higher, and the identification is simpler and easier. In addition, the utility model also breaks the ultrahigh requirements of VCSEL uniformity and consistency in the conventional scheme, and the VCSEL is simpler to manufacture.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A VCSEL-based light emitting lattice comprising a VCSEL light emitting substrate (1) and a number of light emitting spots (2) arranged at different positions on the VCSEL light emitting substrate (1), wherein: the light emitting point (2) comprises at least two different current thresholds, at least two different light emitting powers and at least two different light emitting areas.
2. A VCSEL-based light emitting lattice according to claim 1, wherein the light emitting dots (2) comprise at least two different sizes of light exit mesas, the different sizes of light exit mesas forming different light emitting areas of the light emitting dots (2).
3. A VCSEL-based light emitting lattice according to claim 2, wherein different current thresholds of the light emitting spots (2) are formed after the same oxidation time for the different sized light emitting mesas.
4. A VCSEL-based light emitting lattice according to claim 3, wherein the smaller the light exit mesa, the smaller the current threshold of the light emitting point (2) is, and the light emitting point (2) having the smaller current threshold is lit up earlier than the light emitting point (2) having the larger current threshold when emitting light.
5. A VCSEL-based light emitting lattice according to claim 1, wherein different light emitting powers of the light emitting points (2) form different spot intensities, and light spots formed by light emitting points (2) with higher light emitting powers form larger spot intensities.
6. A VCSEL-based light emitting lattice according to any of claims 1 to 5, wherein all light emitting points (2) on each VCSEL light emitting substrate (1) are controlled by one and the same driver.
7. A VCSEL-based light emitting lattice according to any of claims 1 to 5, wherein the light emitting dots (2) are regularly or irregularly distributed on the VCSEL light emitting substrate (1).
8. A VCSEL-based light emitting lattice according to claim 7, wherein the light emitting points (2) are distributed regularly over the VCSEL light emitting substrate (1) as a whole, and each group of light emitting points (2) having the same current threshold is also distributed regularly over the VCSEL light emitting substrate (1).
9. A VCSEL-based light emitting lattice according to claim 7, wherein the light emitting points (2) are distributed regularly on the VCSEL light emitting substrate (1) as a whole, and the light emitting points (2) of each group having the same current threshold are distributed irregularly on the VCSEL light emitting substrate (1).
10. A VCSEL-based light emitting lattice according to claim 7, wherein the light emitting dots (2) are distributed irregularly on the VCSEL light emitting substrate (1) as a whole, and the light emitting dots (2) of each group having the same current threshold are also distributed irregularly on the VCSEL light emitting substrate (1).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202220308075.6U CN216750642U (en) | 2022-02-15 | 2022-02-15 | Light-emitting lattice based on VCSEL |
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| CN202220308075.6U CN216750642U (en) | 2022-02-15 | 2022-02-15 | Light-emitting lattice based on VCSEL |
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