CN216749879U - Power semiconductor module - Google Patents
Power semiconductor module Download PDFInfo
- Publication number
- CN216749879U CN216749879U CN202122871024.2U CN202122871024U CN216749879U CN 216749879 U CN216749879 U CN 216749879U CN 202122871024 U CN202122871024 U CN 202122871024U CN 216749879 U CN216749879 U CN 216749879U
- Authority
- CN
- China
- Prior art keywords
- plate
- semiconductor module
- power semiconductor
- shaped structure
- power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims description 34
- 239000000919 ceramic Substances 0.000 claims description 32
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 230000017525 heat dissipation Effects 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a power semiconductor module, comprising: the power semiconductor module comprises a shell and a power semiconductor module body connected with the shell, wherein the power semiconductor module body at least comprises a power terminal and a signal terminal; the surface of the shell extends towards the first direction to form a plurality of convex blocks, a space is reserved between every two adjacent convex blocks, and each convex block is provided with a first hole for a power terminal to pass through; the surface of the shell is also provided with a second hole for the signal terminal to pass through; the shell is provided with a mounting hole at the mounting position opposite to the power terminal. The utility model can manufacture a circuit in the power semiconductor module packaged with the width of 60-65 mm, has the advantages of convenient process, short manufacturing time, strong performance, long service life and the like compared with the currently used packaging structure, and effectively improves the integration level of the module.
Description
Technical Field
The utility model relates to the technical field of electronic devices, in particular to a power semiconductor module.
Background
A power semiconductor module is a power driver device that combines power electronics and integrated circuit technology. The intelligent power semiconductor module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. The power semiconductor module is mainly applied to the application occasions of electric energy conversion, such as: motor drive, power transmission and transformation etc. power semiconductor module includes according to the material branch: silicon and silicon carbide. The power semiconductor module is used for packaging a power semiconductor chip into various circuit basic units and is applied to a power circuit of a power electronic system.
At present, a power semiconductor module adopting a 62mm width packaging structure is adopted in the power electronic industry, silicon is adopted as a power semiconductor chip material, so that the frequency is low, the speed is low, the application scene range is small, the manufacturing process mainly adopts reflow soldering, and the heat dissipation and the electric conductivity of the chip are not poor.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to provide a power semiconductor module.
The technical scheme adopted by the utility model is as follows:
a power semiconductor module, comprising: the power semiconductor module comprises a shell and a power semiconductor module main body connected with the shell, wherein the power semiconductor module main body at least comprises a power terminal and a signal terminal; wherein the content of the first and second substances,
the surface of the shell extends towards a first direction to form a plurality of convex blocks, a space is reserved between every two adjacent convex blocks, and each convex block is provided with a first hole for the power terminal to pass through;
the surface of the shell is also provided with a second hole for the signal terminal to pass through;
the shell is provided with a mounting hole at a mounting position right opposite to the power terminal.
In the power semiconductor module, the power semiconductor module body includes a heat dissipation substrate, a plurality of insulating ceramic substrates disposed on the heat dissipation substrate, and silicon carbide chips, resistors, the power terminals, and the signal terminals respectively disposed on the plurality of insulating ceramic substrates.
In the power semiconductor module, the silicon carbide chip and the resistor are sintered on the insulating ceramic substrate by silver paste;
the bottom of the power terminal and the bottom of the signal terminal are connected to the insulating ceramic substrate through reflow soldering;
the insulating ceramic substrate is connected to the heat dissipation substrate by reflow soldering.
In the power semiconductor module, the silicon carbide chip, the resistor, and the insulating ceramic substrate are bonded to each other.
In the power semiconductor module, each of the insulating ceramic plates includes a ceramic intermediate layer and two oxygen-free copper layers respectively disposed on an upper side and a lower side of the ceramic intermediate layer.
In the power semiconductor module, the housing is bonded to the outer edge of the heat dissipation substrate by an epoxy sealant.
In the power semiconductor module, a silicone gel is filled between the housing and the power semiconductor module body.
In the above power semiconductor module, each of the power terminals includes:
the first plate-shaped structure is horizontally arranged;
the second plate-shaped structure is vertically arranged, and the upper end of the second plate-shaped structure is connected with one side of the first plate-shaped structure;
the third plate-shaped structure is horizontally arranged, and the lower end of the second plate-shaped structure is connected with one side of the third plate-shaped structure;
the two fourth plate-shaped structures are vertically arranged, and the upper ends of the two fourth plate-shaped structures are respectively connected with the other side of the third plate-shaped structure;
and the two power terminal pins are respectively connected with the lower ends of the two fourth plate-shaped structures.
In the above power semiconductor module, each of the signal terminals includes:
a fifth plate-like structure, said fifth plate-like structure being vertically disposed;
the sixth plate-shaped structure is horizontally arranged, and one side of the sixth plate-shaped structure is connected with the lower end of the fifth plate-shaped structure;
the seventh plate-shaped structure is vertically arranged, and the upper end of the seventh plate-shaped structure is connected with the other side of the sixth plate-shaped structure;
and the signal terminal pin is connected with the lower end of the seventh plate-shaped structure.
In the power semiconductor module, the width of the housing is 60-65 mm, and the distance between every two adjacent bumps is 4-8 mm.
Due to the adoption of the technology, compared with the prior art, the utility model has the following positive effects:
(1) the utility model can manufacture a circuit in the power semiconductor module packaged with the width of 60-65 mm, has the advantages of convenient process, short manufacturing time, strong performance, long service life and the like compared with the currently used packaging structure, and effectively improves the integration level of the module.
Drawings
Fig. 1 is a schematic diagram of a power semiconductor module of the present invention.
Fig. 2 is a schematic diagram of a power semiconductor module of the present invention.
Fig. 3 is a schematic diagram of a power semiconductor module main body of the power semiconductor module of the present invention.
Fig. 4 is a schematic diagram of a power terminal of the power semiconductor module of the present invention.
Fig. 5 is a schematic diagram of a signal terminal of the power semiconductor module of the present invention.
In the drawings: 1. a housing; 10. a bump; 11. a first hole; 12. a second hole; 13. mounting holes; 2. a power semiconductor module body; 3. a power terminal; 31. a first plate-like structure; 32. a second plate-like structure; 33. a third plate-like structure; 34. a fourth plate-like structure; 35. a power terminal pin; 4. a signal terminal; 45. a fifth plate-like structure; 46. a sixth plate-like structure; 47. a seventh plate-like structure; 48. a signal terminal pin; 5. a heat-dissipating substrate; 6. an insulating ceramic substrate; 7. a silicon carbide chip; 8. and (4) resistance.
Detailed Description
The utility model is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In the description of the present invention, it should be understood that the terms "upper", "lower", "left", "right", "inner", "outer", "transverse", "vertical", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, and thus, should not be construed as limiting the present invention.
It is to be noted that, in the present invention, the terms "vertical", "horizontal", "vertical" and the like are used only for indicating a substantially extending direction or a substantially relative positional relationship, and are not strictly limited to the parallel and vertical direction or the parallel and horizontal plane.
Fig. 1 is a schematic diagram of a power semiconductor module of the present invention, fig. 2 is a schematic diagram of a power semiconductor module of the present invention, fig. 3 is a schematic diagram of a power semiconductor module main body of a power semiconductor module of the present invention, fig. 4 is a schematic diagram of a power terminal of a power semiconductor module of the present invention, fig. 5 is a schematic diagram of a signal terminal of a power semiconductor module of the present invention, please refer to fig. 1 to 5, which illustrate a power semiconductor module of a preferred embodiment, including: a housing 1 and a power semiconductor module body 2 connected to the housing 1, the power semiconductor module body 2 including at least a power terminal 3 and a signal terminal 4; the surface of the shell 1 extends towards a first direction to form a plurality of bumps 10, a space is formed between every two adjacent bumps 11, and each bump 10 is provided with a first hole 11 for the power terminal 3 to pass through; the surface of the shell 1 is also provided with a second hole 12 for the signal terminal 4 to pass through; the housing 1 has a mounting hole 13 formed at a mounting position thereof with respect to the power terminal 3.
Preferably, the surface of the housing 1 extends to the outside of the housing 1 to form a boss, the boss is provided with a plurality of outer grooves recessed towards the inside of the housing 1, the boss is divided by the plurality of outer grooves to form a plurality of projections 10, and one outer groove is arranged between every two adjacent projections 10.
Further, as a preferred embodiment, the power semiconductor module main body 2 includes a heat dissipation substrate 5, a plurality of insulating ceramic substrates 6 provided on the heat dissipation substrate 5, and silicon carbide chips 7, resistors 8, power terminals 3, and signal terminals 4 provided on the plurality of insulating ceramic substrates 6, respectively.
Preferably, the ceramic substrate comprises 3-6 insulating ceramic substrates 6.
Further, as a preferred embodiment, the silicon carbide chip 7 and the resistor 8 are sintered onto the insulating ceramic substrate 6 by silver paste.
Further, as a preferred embodiment, the bottom portions of the power terminals 3 and the bottom portions of the signal terminals 4 are connected to the insulating ceramic substrate 6 by reflow soldering.
Further, as a preferred embodiment, the insulating ceramic substrate 6 is attached to the heat dissipating substrate 5 by reflow soldering.
Further, as a preferred embodiment, the silicon carbide chip 7, the resistor 8 and the insulating ceramic substrate 5 are connected by bonding.
Further, as a preferred embodiment, each of the insulating ceramic plates 5 includes a ceramic intermediate layer and two oxygen-free copper layers respectively disposed on upper and lower sides of the ceramic intermediate layer.
Wherein, the ceramic intermediate layer preferably comprises Al2O3Or AlN or Si3N4A ceramic layer material.
Further, as a preferred embodiment, the housing 1 is bonded to the outer edge of the heat dissipating substrate 5 by an epoxy sealant.
Further, as a preferred embodiment, silicone gel is filled between the housing 1 and the power semiconductor module body 2.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope and the implementation manner of the present invention.
The present invention also has the following embodiments in addition to the above:
in a further embodiment of the utility model, each power terminal 3 comprises: a first plate-like structure 31, the first plate-like structure 31 being horizontally disposed.
In a further embodiment of the utility model, each power terminal 3 comprises: and a second plate-shaped structure 32, wherein the second plate-shaped structure 32 is vertically arranged, and the upper end of the second plate-shaped structure 32 is connected with one side of the first plate-shaped structure 31.
The second plate-like structure 32 penetrates through the first hole 11 and protrudes outside the housing 1, and the first plate-like structure 31 is located outside the housing 1.
Preferably, the first plate-like structure 31 has a hole, which is directly opposite to the mounting hole 13.
In a further embodiment of the utility model, each power terminal 3 comprises: and a third plate-shaped structure 33, wherein the third plate-shaped structure 33 is horizontally arranged, and the lower end of the second plate-shaped structure 32 is connected with one side of the third plate-shaped structure 33.
In a further embodiment of the utility model, each power terminal 3 comprises: and the two fourth plate-shaped structures 34 are vertically arranged, and the upper ends of the two fourth plate-shaped structures 34 are respectively connected with the other side of the third plate-shaped structure 33.
In a further embodiment of the utility model, each power terminal 3 comprises: two power terminal pins 35, and the two power terminal pins 35 are respectively connected to the lower ends of the two fourth plate-like structures 34.
As shown in fig. 4, the upper portion of the power terminal 3 forms an inverted "L" structure, and the lower portion of the power terminal 3 forms a "Z" structure, which has a better buffering effect. And the bottom of the power terminal is provided with two separated power terminal pins 35, so that the force applied in the mounting process and the like is effectively prevented from being transferred to the welding part of the power terminal 3.
In a further embodiment of the utility model, each signal terminal 4 comprises: a fifth plate-like structure 45, the fifth plate-like structure 45 being vertically disposed.
Wherein the fifth plate-like structure 45 extends through the second hole 12 and protrudes from the housing 1.
In a further embodiment of the utility model, each signal terminal 4 comprises: a sixth plate-like structure 46, the sixth plate-like structure 46 being horizontally disposed, one side of the sixth plate-like structure 46 being connected to the lower end of the fifth plate-like structure 45.
In a further embodiment of the utility model, each signal terminal 4 comprises: and the seventh plate-shaped structure 47 is vertically arranged, and the upper end of the seventh plate-shaped structure is connected with the other side of the sixth plate-shaped structure.
In a further embodiment of the utility model, each signal terminal 4 comprises: a signal terminal pin 48 connected to the lower end of the seventh plate-like structure.
Referring to fig. 5, the lower portion of the signal terminal 4 forms a "C" shape, which has a better buffering effect and effectively prevents the force applied during the mounting process from being transmitted to the soldering portion of the signal terminal 4.
In a further embodiment of the present invention, the width of the housing 1 is 60-65 mm, and the distance between every two adjacent bumps 10 is 4-8 mm.
While the utility model has been described with reference to a preferred embodiment, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the utility model.
Claims (10)
1. A power semiconductor module, comprising: the power semiconductor module comprises a shell and a power semiconductor module main body connected with the shell, wherein the power semiconductor module main body at least comprises a power terminal and a signal terminal; wherein the content of the first and second substances,
the surface of the shell extends towards a first direction to form a plurality of convex blocks, a space is reserved between every two adjacent convex blocks, and each convex block is provided with a first hole for the power terminal to pass through;
the surface of the shell is also provided with a second hole for the signal terminal to pass through;
the shell is provided with a mounting hole at a mounting position right opposite to the power terminal.
2. The power semiconductor module according to claim 1, wherein the power semiconductor module main body includes a heat dissipation substrate, a plurality of insulating ceramic substrates provided on the heat dissipation substrate, and silicon carbide chips, resistors, the power terminals, and the signal terminals provided on the plurality of insulating ceramic substrates, respectively.
3. The power semiconductor module of claim 2, wherein the silicon carbide chip and the resistor are sintered onto the insulating ceramic substrate by silver paste;
the bottom of the power terminal and the bottom of the signal terminal are connected to the insulating ceramic substrate through reflow soldering;
the insulating ceramic substrate is connected to the heat dissipation substrate by reflow soldering.
4. The power semiconductor module according to claim 2 or 3, wherein the silicon carbide chip, the resistor, and the insulating ceramic substrate are connected to each other by bonding.
5. The power semiconductor module according to claim 2 or 3, characterized in that each of the insulating ceramic plates comprises a ceramic intermediate layer and two oxygen-free copper layers respectively disposed on the upper side and the lower side of the ceramic intermediate layer.
6. The power semiconductor module of claim 2 or 3, wherein the housing is bonded to the outer edge of the heat-dissipating substrate by an epoxy sealant.
7. The power semiconductor module of claim 1, wherein a silicone gel is potted between the housing and the power semiconductor module body.
8. The power semiconductor module of claim 1, wherein each of the power terminals comprises:
the first plate-shaped structure is horizontally arranged;
the second plate-shaped structure is vertically arranged, and the upper end of the second plate-shaped structure is connected with one side of the first plate-shaped structure;
the third plate-shaped structure is horizontally arranged, and the lower end of the second plate-shaped structure is connected with one side of the third plate-shaped structure;
the two fourth plate-shaped structures are vertically arranged, and the upper ends of the two fourth plate-shaped structures are respectively connected with the other side of the third plate-shaped structure;
and the two power terminal pins are respectively connected with the lower ends of the two fourth plate-shaped structures.
9. The power semiconductor module of claim 1, wherein each of the signal terminals comprises:
a fifth plate-like structure, said fifth plate-like structure being vertically disposed;
the sixth plate-shaped structure is horizontally arranged, and one side of the sixth plate-shaped structure is connected with the lower end of the fifth plate-shaped structure;
the seventh plate-shaped structure is vertically arranged, and the upper end of the seventh plate-shaped structure is connected with the other side of the sixth plate-shaped structure;
and the signal terminal pin is connected with the lower end of the seventh plate-shaped structure.
10. The power semiconductor module of claim 1, wherein the width of the housing is 60-65 mm, and the distance between every two adjacent bumps is 4-8 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122871024.2U CN216749879U (en) | 2021-11-22 | 2021-11-22 | Power semiconductor module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122871024.2U CN216749879U (en) | 2021-11-22 | 2021-11-22 | Power semiconductor module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216749879U true CN216749879U (en) | 2022-06-14 |
Family
ID=81928623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122871024.2U Active CN216749879U (en) | 2021-11-22 | 2021-11-22 | Power semiconductor module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216749879U (en) |
-
2021
- 2021-11-22 CN CN202122871024.2U patent/CN216749879U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4634497B2 (en) | Power semiconductor module | |
| US10818574B2 (en) | Plug-in type power module and subsystem thereof | |
| US8916958B2 (en) | Semiconductor package with multiple chips and substrate in metal cap | |
| CN105612613B (en) | Semiconductor device | |
| CN109427707A (en) | A kind of the three-dimension packaging structure and packaging method of power device | |
| US20220310473A1 (en) | Chip package | |
| CN214043635U (en) | Intelligent power module and power electronic equipment | |
| US5804873A (en) | Heatsink for surface mount device for circuit board mounting | |
| CN114449739A (en) | Packaging module, preparation method thereof and electronic equipment | |
| CN112736040A (en) | Double-side welded power module and welding process | |
| CN216749879U (en) | Power semiconductor module | |
| KR20220001679A (en) | Current power module package with dual side cooling with copper via spacers with upper and lower conductive layers | |
| CN115443531A (en) | Power module, manufacturing method thereof, converter and electronic equipment | |
| CN218827079U (en) | Power module | |
| CN214797417U (en) | Power module packaging structure | |
| CN219085965U (en) | Semiconductor circuit assembly with surface-mounted metal heat dissipation block and heat dissipation assembly | |
| CN216958019U (en) | Power module with metal connecting frame | |
| CN218939660U (en) | Power module and electronic equipment thereof | |
| CN219553614U (en) | Semiconductor circuit and radiator | |
| WO2022195865A1 (en) | Four-sided cooling power module | |
| KR102484544B1 (en) | Current power module package with dual side cooling without spacer with wire bonding | |
| CN218788371U (en) | Packaging module and electronic equipment | |
| CN220400580U (en) | High-efficiency radiating unit type discrete device | |
| CN220155541U (en) | Multi-chip series IGBT module packaging structure | |
| CN210628290U (en) | Power module and electrical equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee after: Star Semiconductor Co.,Ltd. Address before: No.988, Kexing Road, Nanhu District, Jiaxing City, Zhejiang Province Patentee before: STARPOWER SEMICONDUCTOR Ltd. |
|
| CP01 | Change in the name or title of a patent holder |