CN216698391U - Semiconductor device with a plurality of semiconductor chips - Google Patents
Semiconductor device with a plurality of semiconductor chips Download PDFInfo
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- CN216698391U CN216698391U CN202220065256.0U CN202220065256U CN216698391U CN 216698391 U CN216698391 U CN 216698391U CN 202220065256 U CN202220065256 U CN 202220065256U CN 216698391 U CN216698391 U CN 216698391U
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Abstract
The utility model provides a semiconductor element. The semiconductor element comprises a laser diode and a photosensitive chip. The laser diode provides a laser signal in a first direction according to a driving signal. The photosensitive chip includes a photosensitive portion. The light sensing section faces the laser diode in a second direction with respect to the first direction, thereby directly receiving the laser signal. The photosensitive chip operates according to the laser signal. The semiconductor element can be reduced in size.
Description
Technical Field
The present invention relates to a semiconductor device, and more particularly, to an optoelectronic semiconductor device with a small volume.
Background
In the conventional optical coupling element, a light emitting diode is used as a light source. The optical coupling element receives the light source and performs a corresponding operation in response to the light source. However, current leds are point sources. The light provided by the leds is divergent. Therefore, the light receiving area of the light receiving portion of the optical coupling element for receiving light must be increased to obtain the required light energy. Therefore, the reduction in the volume of the optical coupling element is limited by the light-sensing area of the light-sensing portion. In some cases, the addition of an optical structure can converge the divergence of the light. However, the reduction in the volume of the optical coupling element is also limited by the addition of the optical structure.
SUMMERY OF THE UTILITY MODEL
The utility model provides a photoelectric semiconductor element capable of realizing small volume.
The semiconductor element of the utility model comprises a laser diode and a photosensitive chip. The laser diode provides a laser signal in a first direction according to a driving signal. The photosensitive chip includes a photosensitive portion. The light sensing section faces the laser diode in a second direction with respect to the first direction, thereby directly receiving the laser signal. The photosensitive chip operates according to the laser signal.
In an embodiment of the utility model, a light sensing area of the light sensing portion is designed to be substantially equal to a beam cross-sectional area of the laser signal.
In an embodiment of the present invention, the laser signal is an infrared laser signal.
In an embodiment of the utility model, the operation performed by the photo sensor chip is one of a signal supplying operation, a coupling/decoupling operation, a decoding operation and an encoding operation.
In an embodiment of the present invention, the photo sensor chip is a photo transistor. The photosensitive chip is configured to perform a switching operation according to the laser signal.
In an embodiment of the utility model, the light sensing chip provides an electrical signal according to the laser signal.
In an embodiment of the utility model, the electrical signal is a control signal for controlling at least one relay unit. The at least one relay unit performs a switching operation with respect to the relays depending on the electrical signals, respectively.
Based on the above, the laser diode provides a laser signal. The light sensing part of the light sensing chip faces the laser diode to directly receive the laser signal. The light divergence of the laser signal is significantly smaller than the light divergence of the point light source. Therefore, the light-sensing area of the light-sensing portion does not need to be increased in response to the light divergence. Further, the light sensing section faces the laser diode to directly receive the laser signal. Therefore, the semiconductor element does not require an optical structure. Thus, the semiconductor device can be reduced in size.
Drawings
The following description of the embodiments should be read in conjunction with the accompanying drawings to more fully understand the aspects of the present invention. Note that various features or objects may not be drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion. Additionally, the drawings are illustrated as examples of embodiments of the utility model and are not intended to be limiting.
Fig. 1 is a schematic configuration diagram of a semiconductor device according to a first embodiment of the utility model.
Fig. 2 is a schematic layout diagram of a semiconductor device according to a second embodiment of the utility model.
Fig. 3 is a schematic configuration diagram of a semiconductor device according to a third embodiment of the utility model.
Description of the reference numerals
100. 200 and 300: semiconductor device with a plurality of semiconductor chips
110: laser diode
120. 220, 320: photosensitive chip
121. 321: light-sensing part
D1, D2: direction of rotation
RU: relay unit
SD: drive signal
SG: electrical signals
SL: a laser signal.
Detailed Description
Some embodiments of the utility model will now be described in detail with reference to the drawings, wherein like reference numerals are used to refer to like or similar elements throughout the several views. These examples are only a part of the present invention and do not disclose all possible embodiments of the present invention. Rather, these embodiments are merely exemplary of the utility model as defined in the claims.
Referring to fig. 1, fig. 1 is a schematic configuration diagram of a semiconductor device according to a first embodiment of the utility model. In the present embodiment, the semiconductor device 100 includes a laser diode 110 and a photo sensor chip 120. The laser diode 110 provides the laser signal SL in the direction D1 according to the driving signal SD. The light sensing chip 120 includes a light sensing portion 121. The light sensing section 121 is a laser signal receiving end of the light sensing chip 120. The light sensing section 121 faces the laser diode 110 along the direction D2. Direction D2 is opposite to direction D1. Therefore, the light receiving section 121 directly receives the laser signal SL from the laser diode 110. In the present embodiment, the laser signal SL may be an Infrared (IR) laser (laser) signal. The wavelength of the infrared laser signal is between 800 and 1100 nanometers. In the present embodiment, when the light-sensing portion 121 receives the laser signal SL, the light-sensing chip 120 operates according to the laser signal SL. For example, the photo sensor chip 120 performs a signal supplying operation in response to the laser signal SL. For another example, the photo sensor chip 120 performs a coupling/decoupling operation in response to the laser signal SL. The light sensing chip 120 performs an encoding/decoding operation on the laser signal SL in response to the laser signal SL.
It is worth mentioning here that the laser diode 110 provides the laser signal SL. The light sensing part 121 of the light sensing chip 120 faces the laser diode 110 to directly receive the laser signal SL. The laser signal SL is a light beam having high directivity. It should be appreciated that the light divergence of the laser signal SL is significantly less than the light divergence of the point light source. The light-sensing area of the light-sensing section 121 may be designed to be substantially equal to the beam cross-sectional area of the laser signal SL, or slightly larger than the beam cross-sectional area of the laser signal SL. In other words, based on the above-mentioned design of the light-sensing area, the light-sensing portion 121 can receive the full energy of the laser signal SL. Therefore, the light-receiving area of the light-receiving portion 121 does not need to be increased in response to the light divergence. Further, the light sensing section 121 faces the laser diode 110, and directly receives the laser signal SL. Therefore, the semiconductor element 100 does not require an optical structure. In this way, the semiconductor device 100 can be reduced in size.
In the present embodiment, a medium (not shown) is disposed at least between the laser diode 110 and the light sensing section 121. The medium may be a material that allows the laser signal SL to pass through. The medium is, for example, a resin or an oxide having a high transmittance for the laser signal SL. Therefore, the laser signal SL is supplied to the light sensing part 121 in the direction D1.
Referring to fig. 2, fig. 2 is a schematic configuration diagram of a semiconductor device according to a second embodiment of the utility model. In the present embodiment, the semiconductor device 200 includes a laser diode 110 and a light sensing chip 220. The photo sensor chip 220 of the present embodiment is a photo transistor (or light-emitting transistor). The photo sensor chip 220 performs a switching operation according to the laser signal SL. The semiconductor element 200 may perform, for example, an operation of an optical coupler (photocopier). For example, the first end of the photo sensor chip 220 is electrically connected to the first device. The second end of the photo sensor chip 220 is electrically connected to the second element. The control end of the light sensing chip 220 is a light sensing portion (such as the light sensing portion 121 shown in fig. 1). When the control terminal of the photo sensor chip 220 receives the laser signal SL, the photo sensor chip 220 is turned on in response to the laser signal SL, so as to couple the first element and the second element. On the other hand, when the control terminal of the photo sensor chip 220 does not receive the laser signal SL, the photo sensor chip 220 is turned off, so as to decouple the first element from the second element.
For another example, contrary to the above example, when the control terminal of the photo sensor chip 220 receives the laser signal SL, the photo sensor chip 220 is turned off in response to the laser signal SL, so as to perform a decoupling operation on the first element and the second element. On the other hand, when the control terminal of the photo sensor chip 220 does not receive the laser signal SL, the photo sensor chip 220 is turned on, so as to couple the first element and the second element.
Referring to fig. 3, fig. 3 is a schematic configuration diagram of a semiconductor device according to a third embodiment of the utility model. In the present embodiment, the semiconductor device 300 includes a laser diode 110 and a photo sensor chip 320. The light sensing chip 320 of the present embodiment is a photodiode. The photo sensor chip 320 provides an electrical signal SG according to the laser signal SL. The electrical signal SG may be various forms of voltage signals or current signals. For example, when the light-sensing portion 321 receives the laser signal SL, the light-sensing chip 320 provides the electrical signal SG in response to the laser signal SL. In this example, the photo sensing chip 320 may perform an operation of, for example, a photodiode (photodiode).
For another example, the electrical signal SG is a control signal for controlling the relay unit RU. The relay unit RU performs a switching operation with respect to the relay depending on the electric signal SG. When receiving the electric signal SG, the relay unit RU performs a switching operation with respect to the relay, for example, one of the switching operations of "a contact", "b contact", and "c contact". When the electrical signal SG is not received, the relay unit RU performs another one of the switching operations, such as "contact a", "contact b", and "contact c".
In some embodiments, the semiconductor element 300 may control the plurality of relay units RU using the electrical signal SG. The present invention is not limited to the number of control of the relay units RU.
In some embodiments, at least one relay unit may be provided in the semiconductor element 300. In some embodiments, the semiconductor device 300 may be integrated with at least one relay unit in a device.
Referring back to the embodiment of fig. 1, the photo sensor chip 120 performs an encoding/decoding operation on the laser signal SL in response to the laser signal SL. The light sensing chip 120 may be one of an encoder and a decoder.
In summary, the semiconductor device of the present invention employs a laser diode as a light source. The laser diode provides a laser signal. The light sensing section faces the laser diode to directly receive the laser signal. The laser signal is a laser beam. The light divergence of the laser signal is significantly smaller than the light divergence of the point light source. Therefore, the light sensing area of the light sensing section may be designed to be substantially equal to or slightly larger than the beam cross-sectional area of the laser signal. The light-sensing area of the light-sensing section does not need to be increased in response to the light divergence. In addition, the light sensing section faces the laser diode to directly receive the laser signal. Therefore, the semiconductor element does not require an additional optical structure. Thus, the semiconductor device can be reduced in size.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the utility model has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and these modifications or substitutions do not depart from the spirit of the corresponding technical solutions of the embodiments of the present invention.
Claims (7)
1. A semiconductor element, comprising:
a laser diode configured to provide a laser signal toward a first direction in accordance with a driving signal; and
a light sensing chip comprising:
and a light sensing part facing the laser diode in a second direction opposite to the first direction so as to directly receive the laser signal, wherein the light sensing chip operates according to the laser signal.
2. The semiconductor device according to claim 1, wherein a light sensing area of the light sensing section is designed to be substantially equal to a beam cross-sectional area of the laser signal.
3. The semiconductor element according to claim 1, wherein the laser signal is an infrared laser signal.
4. The semiconductor component of claim 1, wherein the operation is one of a signal supply operation, a coupling/decoupling operation, a decoding operation, and an encoding operation.
5. The semiconductor device as claimed in claim 1, wherein the photo-sensing chip is a photo-transistor configured to perform a switching operation according to the laser signal.
6. The semiconductor device as claimed in claim 1, wherein the photo-sensing chip is configured to provide an electrical signal according to the laser signal.
7. The semiconductor element according to claim 6, wherein:
the electrical signal is used as a control signal for controlling at least one relay unit, and
the at least one relay unit performs a switching operation with respect to the relays depending on the electrical signals, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220065256.0U CN216698391U (en) | 2022-01-11 | 2022-01-11 | Semiconductor device with a plurality of semiconductor chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220065256.0U CN216698391U (en) | 2022-01-11 | 2022-01-11 | Semiconductor device with a plurality of semiconductor chips |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216698391U true CN216698391U (en) | 2022-06-07 |
Family
ID=81825102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202220065256.0U Active CN216698391U (en) | 2022-01-11 | 2022-01-11 | Semiconductor device with a plurality of semiconductor chips |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216698391U (en) |
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2022
- 2022-01-11 CN CN202220065256.0U patent/CN216698391U/en active Active
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