CN216696893U - Laser shaping system - Google Patents
Laser shaping system Download PDFInfo
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- CN216696893U CN216696893U CN202220109875.5U CN202220109875U CN216696893U CN 216696893 U CN216696893 U CN 216696893U CN 202220109875 U CN202220109875 U CN 202220109875U CN 216696893 U CN216696893 U CN 216696893U
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Abstract
The application discloses laser shaping system, including setting gradually along the light path direction and waiting to reshape semiconductor laser, collimation single lens and scattering piece. Different from the traditional shaping mode of collimating by adopting a cylindrical lens, the laser shaping system adopts a collimating single lens to collimate the divergent laser beam, the collimated light spot is an elliptical light spot, and a Gaussian scattering sheet is adopted to diffuse the laser beam. Compared with a cylindrical lens, the collimating single lens adopted by the laser shaping system is lower in cost, and the wave front difference of the light beam shaped by the collimating single lens is better controlled. The uniformity of the light spots of the light beam shaped by the Gaussian scattering sheet is better.
Description
Technical Field
The utility model relates to the technical field of optics, in particular to a laser shaping system.
Background
The low-power near-infrared semiconductor laser has strong laser penetration of wavelength, so that the medium can absorb the low-power near-infrared semiconductor laser minimally, the adjustable range of the spot diameter is large, the low-power near-infrared semiconductor laser is the most common heat source in ophthalmology, and the low-power near-infrared semiconductor laser can be used for treating various refractory glaucoma, photocoagulation and fixation of retina and the like.
The semiconductor laser array is composed of a plurality of laser emitting units, and due to the influence of asymmetric optical waveguides, the Gaussian beams output by each laser have larger difference in the direction vertical to the junction plane (fast axis) and the direction parallel to the junction plane (slow axis), namely, the two directions have larger and asymmetric divergence angles. Thus, the output beam of the semiconductor laser array can be practically applied after being shaped by an optical system.
In the traditional laser shaping mode, the cylindrical lenses are adopted to collimate the laser in two directions respectively, a circular spot is formed in a far field, but the cost is high.
SUMMERY OF THE UTILITY MODEL
It is an object of the present invention to provide a laser shaping system which ameliorates the above problems.
The embodiment of the utility model is realized by the following steps:
the utility model provides a laser shaping system, comprising: the semiconductor laser to be shaped, the collimating single lens and the scattering sheet are sequentially arranged along the direction of the light path.
Divergence angles of light beams emitted by the semiconductor laser to be shaped on a fast axis and a slow axis are different; the surface of the collimation single lens facing the semiconductor laser to be shaped is a plane, and the surface of the collimation single lens departing from the semiconductor laser to be shaped protrudes towards the direction departing from the semiconductor laser to be shaped; the light spots of the light beams collimated by the collimating single lens are elliptical light spots; the surface of the scattering sheet is provided with a plurality of micro structures, and the scattering sheet diffuses laser beams through refraction and diffraction.
And the light beam emitted by the semiconductor laser to be shaped is red light. The divergence angle of the light beam emitted by the semiconductor laser to be shaped on the fast axis is 8 degrees, and the divergence angle of the light beam emitted by the semiconductor laser to be shaped on the slow axis is 38 degrees.
And controlling the red laser to light for a certain time at rated power to treat the myopia of the eyes of the user. Since red light is a warm effect, the red laser light is directly irradiated on the retina of the user, and the choroid behind the retina is also affected by it. Through the action of light, the eyeground blood microcirculation is improved, the dopamine secretion of retinal pigment epithelial cells is promoted, and sufficient oxygen is supplied to the sclera, so that the effect of relieving the myopia condition is achieved.
It can be understood that the application discloses a laser shaping system, sets gradually along the light path direction and waits to reshape semiconductor laser, collimation single lens and diffusion sheet. Different from the traditional shaping mode of collimating by adopting a cylindrical lens, the laser shaping system adopts a collimating single lens to collimate the divergent laser beam, the collimated light spot is an elliptical light spot, and a Gaussian scattering sheet is adopted to diffuse the laser beam. Compared with a cylindrical lens, the collimating single lens adopted by the laser shaping system is lower in cost, and the wave front difference of the light beam shaped by the collimating single lens is better controlled. The uniformity of the light spots of the light beam shaped by the Gaussian diffuser is better.
In an alternative embodiment of the present invention, the focal length of the collimating einzel lens is any value between 7.3mm and 8.5 mm. The absolute value of the difference between the diameter of the collimating single lens and 5mm is smaller than a first preset value.
In an alternative embodiment of the utility model, the curvature, R, of the collimating einzel lens is 4.8343 mm.
The first preset value can be set by a person skilled in the art according to specific situations, and the aim is to make the diameter of the collimating einzel lens as close to 5mm as possible, so that the smaller the first preset value, the better. For example, the center of the collimating single lens is 3mm thick and the diameter is 5.2 mm; the distance between the collimating single lens and the semiconductor laser to be shaped is 6 mm. The collimating single lens can be H-ZK3A type lens supplied by Dougenming.
In an alternative embodiment of the utility model, the diffuser plate is made of a material comprising glass.
In an alternative embodiment of the present invention, a plurality of micro-recessed structures are disposed on the surface of the diffuser sheet. The depth of the micro-concave structure is any value between 100 and 150 μm, and the diameter of the micro-concave structure is any value between 1 and 10 μm.
The depth is the direction perpendicular to the surface of the scattering sheet, and the diameter of the micro-recessed structure is the diameter of the micro-recessed structure on the surface of the scattering sheet.
In an optional embodiment of the present invention, an area on the surface of the scattering sheet, where a distance from the center of the scattering sheet is smaller than a second preset value, is a central area, and an area on the surface of the scattering sheet, where a distance from the center of the scattering sheet is greater than or equal to the second preset value, is an edge area; the depth of the micro-recess structure in the central region is greater than the depth of the micro-recess structure in the edge region.
It can be understood that the depth of the micro-recessed structures in the central region is greater than that of the micro-recessed structures in the edge region, that is, the scattering sheet satisfies the condition of a gaussian scattering sheet, the diffusing sheet of the recessed structures acts as a negative lens, the refraction and diffraction of the laser realizes the diffusion effect on the laser, and the beam diffusion of the central part of the laser beam can be better ensured.
Has the advantages that:
the application discloses laser shaping system sets gradually along the light path direction and waits to plastic semiconductor laser, collimation single lens and scattering piece. Different from the traditional shaping mode of collimating by adopting a cylindrical lens, the laser shaping system adopts a collimating single lens to collimate the divergent laser beam, the collimated light spot is an elliptical light spot, and a Gaussian scattering sheet is adopted to diffuse the laser beam. Compared with a cylindrical lens, the collimating single lens adopted by the laser shaping system is lower in cost, and the wave front difference of the light beam shaped by the collimating single lens is better controlled. The uniformity of the light spots of the light beam shaped by the Gaussian scattering sheet is better.
In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic diagram of a laser shaping system according to the present invention;
FIG. 2 is a functional schematic diagram of a collimating einzel lens in the laser shaping system shown in FIG. 1;
FIG. 3 is a schematic diagram of the laser beam spot collimated by the collimating lens of FIG. 2;
fig. 4 is an enlarged schematic view of a diffuser of the laser shaping system shown in fig. 1.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The following table shows the application of the semiconductor laser in the medical device.
TABLE 1 application of semiconductor lasers in medical devices
The semiconductor laser array is composed of a plurality of laser emitting units, and due to the influence of asymmetric optical waveguides, the Gaussian beam output by each laser has a large difference in the direction vertical to the junction plane (fast axis) and the direction parallel to the junction plane (slow axis), namely, the two directions have large and asymmetric divergence angles. Thus, the output beam of the semiconductor laser array can be practically applied after being shaped by an optical system.
As shown in fig. 1, the present invention provides a laser shaping system, comprising: the semiconductor laser 10 to be shaped, the collimating single lens 20 and the scattering sheet 30 are sequentially arranged along the optical path direction.
Divergence angles of light beams emitted by the semiconductor laser 10 to be shaped on a fast axis and a slow axis are inconsistent; the surface of the collimating single lens 20 facing the semiconductor laser 10 to be shaped is a plane, and the surface of the collimating single lens 20 departing from the semiconductor laser 10 to be shaped protrudes in the direction departing from the semiconductor laser 10 to be shaped; the light spots of the light beams collimated by the collimating single lens 20 are elliptical light spots; the diffusion sheet 30 has a plurality of microstructures on a surface thereof, and the diffusion sheet 30 diffuses the laser beam by refraction and diffraction.
Wherein, the light beam emitted by the semiconductor laser 10 to be shaped is red light. The divergence angle of the light beam emitted by the semiconductor laser 10 to be shaped on the fast axis is 8 °, and the divergence angle of the light beam emitted by the semiconductor laser 10 to be shaped on the slow axis is 38 °.
And controlling the red laser to light for a certain time at rated power to treat the myopia of the eyes of the user. Since red light is a warm effect, the red laser light is directly irradiated on the retina of the user, and the choroid behind the retina is also affected by it. Through the action of light, the eyeground blood microcirculation is improved, the dopamine secretion of retinal pigment epithelial cells is promoted, and sufficient oxygen is supplied to the sclera, so that the effect of relieving the myopia condition is achieved.
It can be understood that the application discloses a laser shaping system, and a semiconductor laser 10 to be shaped, a collimating single lens 20 and a scattering sheet 30 are arranged in sequence along the optical path direction. Different from the traditional shaping mode of using a cylindrical lens for collimation, the laser shaping system adopts the collimating single lens 20 to collimate the divergent laser beam, as shown in fig. 2, the collimated light spot is an elliptical light spot, as shown in fig. 3, and the gaussian diffusion sheet 30 is used for diffusing the laser beam. Compared with a cylindrical lens, the collimating single lens 20 adopted by the laser shaping system is lower in cost, and the wave front difference of the light beam shaped by the collimating single lens 20 is better controlled. The uniformity of the light spot of the light beam shaped by the Gaussian diffuser 30 is better.
In an alternative embodiment of the utility model, the focal length of the collimating einzel lens 20 is any value between 7.3mm and 8.5 mm. The absolute value of the difference between the diameter of the collimating einzel lens 20 and 5mm is less than the first preset value.
The first preset value can be set by a person skilled in the art according to specific situations, and the purpose of the first preset value is to make the diameter of the collimating einzel lens 20 as close to 5mm as possible, so that the smaller the first preset value, the better. For example, the collimating einzel lens 20 has a center thickness of 3mm and a diameter of 5.2 mm; the spacing between the collimating single lens 20 and the semiconductor laser 10 to be shaped is 6 mm. The collimating lens 20 may be an H-ZK3A model lens available from Dougenming corporation.
In an alternative embodiment of the present invention, the diffuser sheet 30 is made of a material including glass.
In an alternative embodiment of the present invention, as shown in fig. 4, a plurality of micro-depression structures 40 are disposed on the surface of the diffuser sheet 30. The depth h of the micro-recess structure 40 is anywhere between 100 μm and 150 μm, and the diameter d of the micro-recess structure 40 is anywhere between 1 μm and 10 μm.
Wherein, the depth is a direction perpendicular to the surface of the diffuser 30, and the diameter of the micro-recess structure 40 is the diameter of the micro-recess structure 40 on the surface of the diffuser 30.
In an alternative embodiment of the present invention, a region on the surface of the diffuser 30, which is away from the center of the diffuser 30 by less than a second preset value, is a central region, and a region on the surface of the diffuser 30, which is away from the center of the diffuser 30 by more than or equal to the second preset value, is an edge region; the depth of the micro-recess structure 40 in the central region is greater than the depth of the micro-recess structure 40 in the edge region.
It can be understood that the depth of the micro-recessed structure 40 in the central region is greater than the depth of the micro-recessed structure 40 in the edge region, that is, the scattering sheet 30 satisfies the condition of the gaussian scattering sheet 30, the diffusing sheet of the recessed structure acts as a negative lens, the refraction and diffraction of the laser realizes the diffusion effect on the laser, and the beam diffusion at the central part of the laser beam can be better ensured.
Formula for gaussian scattering:
wherein A is a constant. The random number is used to generate an appropriate value for the vector x. The distribution result is rotationally symmetric in the cosine space direction, regardless of the angle at which the mirror ray is linked to the normal of the face. The value of σ corresponds to the number of scattering vectors of the probability point in the cosine space direction e. σ is 1.2sin (θ/2), where θ is the scattering half angle and θ is 10 degrees.
Has the advantages that:
the application discloses a laser shaping system, which is provided with a semiconductor laser 10 to be shaped, a collimating single lens 20 and a scattering sheet 30 in sequence along the direction of a light path. Different from the traditional shaping mode of collimating by using a cylindrical lens, the laser shaping system adopts the collimating single lens 20 to collimate the divergent laser beam, the collimated light spot is an elliptical light spot, and the laser beam is diffused by adopting the Gaussian scattering sheet 30. Compared with a cylindrical lens, the collimating single lens 20 adopted by the laser shaping system is lower in cost, and the wave front difference of the light beam shaped by the collimating single lens 20 is better controlled. The uniformity of the light spot of the light beam shaped by the Gaussian diffuser 30 is better.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A laser shaping system, comprising:
the semiconductor laser to be shaped, the collimating single lens and the scattering sheet are sequentially arranged along the direction of the light path;
divergence angles of light beams emitted by the semiconductor laser to be shaped on a fast axis and a slow axis are different;
the surface of the collimation single lens facing the semiconductor laser to be shaped is a plane, and the surface of the collimation single lens departing from the semiconductor laser to be shaped protrudes towards the direction departing from the semiconductor laser to be shaped; the light beam spots collimated by the collimating single lens are elliptical spots;
the surface of the scattering sheet is provided with a plurality of micro structures, and the scattering sheet diffuses laser beams through refraction and diffraction.
2. The laser shaping system of claim 1,
the focal length of the collimating single lens is any value between 7.3mm and 8.5 mm.
3. The laser shaping system of claim 2,
the absolute value of the difference between the diameter of the collimating single lens and 5mm is smaller than a first preset value.
4. The laser shaping system of claim 3,
the center thickness of the collimating single lens is 3mm, and the diameter of the collimating single lens is 5.2 mm;
the distance between the collimating single lens and the semiconductor laser to be shaped is 6 mm.
5. The laser shaping system of claim 1,
a plurality of micro concave structures are arranged on the surface of the scattering sheet.
6. The laser shaping system of claim 5,
the depth of the micro-concave structure is any value between 100 mu m and 150 mu m, and the diameter of the micro-concave structure is any value between 1 mu m and 10 mu m.
7. The laser shaping system of claim 6,
the area, on the surface of the scattering sheet, of which the distance from the center of the scattering sheet is smaller than a second preset value is a central area, and the area, on the surface of the scattering sheet, of which the distance from the center of the scattering sheet is larger than or equal to the second preset value is an edge area;
the depth of the micro-recess structure in the central region is greater than the depth of the micro-recess structure in the edge region.
8. Laser light shaping system according to any one of claims 5 to 7,
the material for making the scattering sheet comprises glass.
9. The laser shaping system of claim 1,
and the light beam emitted by the semiconductor laser to be shaped is red light.
10. The laser shaping system of claim 1,
the divergence angle of the light beam emitted by the semiconductor laser to be shaped on the fast axis is 8 degrees, and the divergence angle of the light beam emitted by the semiconductor laser to be shaped on the slow axis is 38 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220109875.5U CN216696893U (en) | 2022-01-17 | 2022-01-17 | Laser shaping system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202220109875.5U CN216696893U (en) | 2022-01-17 | 2022-01-17 | Laser shaping system |
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| Publication Number | Publication Date |
|---|---|
| CN216696893U true CN216696893U (en) | 2022-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202220109875.5U Active CN216696893U (en) | 2022-01-17 | 2022-01-17 | Laser shaping system |
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| CN (1) | CN216696893U (en) |
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- 2022-01-17 CN CN202220109875.5U patent/CN216696893U/en active Active
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