CN216649629U - Power amplifier and radio frequency chip - Google Patents
Power amplifier and radio frequency chip Download PDFInfo
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- CN216649629U CN216649629U CN202123198299.0U CN202123198299U CN216649629U CN 216649629 U CN216649629 U CN 216649629U CN 202123198299 U CN202123198299 U CN 202123198299U CN 216649629 U CN216649629 U CN 216649629U
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- 239000003990 capacitor Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims 1
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 241001125929 Trisopterus luscus Species 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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Abstract
The embodiment of the utility model provides a power amplifier, which comprises an amplifying circuit and a biasing circuit, wherein the amplifying circuit comprises an amplifying circuit unit; the power amplifier is provided with a common connecting line in a circuit layout, and the connecting point of the bias circuit and the common connecting line is a common connecting point; the amplifying circuit units are arranged side by side on the circuit layout, and the connection point of the second input end of each amplifying circuit unit and the common connection line is a bias connection point; the public connecting line comprises a first section and a second section, and the public connecting point is arranged in the middle of the public connecting line; the number of bias voltage connection points in the first section is the same as the number of bias voltage connection points in the second section, and each bias voltage connection point in the first section is symmetrically arranged with one of the bias voltage connection points in the second section by taking the common connection point as a center. The embodiment of the utility model also provides a radio frequency chip applying the power amplifier. By adopting the technical scheme of the utility model, the circuit has good working performance.
Description
Technical Field
The utility model relates to the technical field of amplifier circuits, in particular to a power amplifier and a radio frequency chip.
Background
At present, with the rapid development of semiconductor technology, the use of integrated circuits has spread to various fields, wherein power amplifiers are commonly used for the amplification of various analog signals, which are important components in analog circuit applications.
A power amplifier in the related art generally includes an amplifying circuit and a bias circuit that supplies a bias voltage to the amplifying circuit. In a circuit of a power combining power amplifier with a differential structure, the amplifier circuit is generally a final stage amplifier unit, and the final stage amplifier unit generally includes more than 30 HBT transistors (BJTs) and more than 30 bias resistors to form more than 30 amplifier units. An HBT transistor and a bias resistor respectively form an amplifying circuit unit, and more than 30 amplifying circuit units are symmetrically combined together in a parallel connection mode to form the amplifying circuit. As shown in fig. 1, fig. 1 is a circuit layout of a related art power amplifier. Wherein A is a circuit layout of the bias circuit; b is a common connection point of the bias circuit and all the amplifying circuit units; c is the connection point of one amplification circuit unit closest to the common connection point B; d is the connection point of the one amplification circuit unit farthest from the common connection point B. The connection point B, the connection point C and the connection point D are all electrically connected through metal connection lines.
However, in the related art power amplifier, the asymmetry of the connection point of the bias circuit and the amplifying circuit unit causes a difference in the actual bias resistance value of the amplifying circuit unit. For example, the length of the B-point to D-point metal connection lines is about 300um, and the length of the B-point to C-point metal connection lines is about 10 um. The thickness of the bias resistance connecting wire from the point B to each amplifying circuit unit is 2um, the width is about 4um generally, the resistance value of the connecting wire per unit length is about 0.008 ohm/micrometer, and the equivalent resistance from the point B to the point D is about 0.008x 300-2.4 ohm. Meanwhile, considering that an extra resistance value is also added to a connection point of a layer of metal and a layer of metal in a circuit layout, the actual equivalent resistance is larger than 2.4 ohms and is far larger than the equivalent resistance value from a point B to a point C. In the power combining power amplifier of the differential structure, this phenomenon is more serious because the number of the amplifying circuit units is large. In addition, since all the amplifying circuit units are connected in parallel, a plurality of bias resistors are also connected in parallel, so that the equivalent bias resistor of the whole final-stage power amplifying circuit is greatly reduced. For example, assuming that the bias resistance R of all the amplifier circuit units is 300 ohms, the number of the amplifier circuit units is 30, and the equivalent bias resistance Rs of the power amplifier circuit is 10 ohms when viewed from the connection point of the bias circuit and the amplifier circuit units as a base point to the entire power amplifier circuit. Therefore, the difference of a plurality of bias resistance values is large due to the large number of the amplifying circuit units and the large circuit layout area, so that the phenomenon of uneven current distribution in all the amplifying circuit units is aggravated, and the circuit reliability and the amplifier performance are influenced. The bias voltage provided by the bias circuit may fluctuate to some extent and is not a fixed value due to the temperature effect of the power amplifier during operation. Because the equivalent bias resistor Rs is very small, the working state of the whole power amplification circuit is greatly influenced by the fluctuation of the bias voltage, and the working state is unstable, so that the performance of the power amplifier is low.
Therefore, there is a need to provide a new power amplifier and rf chip to solve the above problems.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects of the prior art, the utility model provides a power amplifier and a radio frequency chip with good circuit working performance.
In order to solve the above technical problem, an embodiment of the present invention provides a power amplifier including an amplifying circuit and a bias circuit that supplies a bias voltage to the amplifying circuit, the amplifying circuit including a plurality of amplifying circuit units arranged in parallel with each other; the first input end of each amplifying circuit unit is connected with each other and serves as the input end of the amplifying circuit, the second input end of each amplifying circuit unit is connected with the biasing circuit, and the output end of each amplifying circuit unit is connected with each other and serves as the output end of the amplifying circuit;
the number of the amplifying circuit units is N, and N is an even number;
the power amplifier is provided with a common connecting line in a circuit layout, and the connecting point of the bias circuit and the common connecting line is a common connecting point;
the amplifying circuit units are arranged side by side on the circuit layout, the second input end is connected to the common connecting line, the connecting point of the second input end and the common connecting line is a bias voltage connecting point, and each bias voltage connecting point corresponds to one amplifying circuit unit;
the public connecting line comprises a first section and a second section, the public connecting point is arranged in the middle of the public connecting line, and the first section and the second section are connected through the public connecting point; the number of the bias voltage connection points in the first section is the same as the number of the bias voltage connection points in the second section, and each bias voltage connection point in the first section is respectively and symmetrically arranged with one of the bias voltage connection points in the second section by taking the common connection point as a center.
Preferably, N.ltoreq.8.
Preferably, the amplifier circuit includes a plurality of amplifier circuits, the bias circuit includes a plurality of amplifier circuits, and each amplifier circuit is connected to one of the bias circuits.
Preferably, N is 8, the number of the amplifying circuits is 4, and the number of the bias circuits is 4.
Preferably, the common connection line is a metal line in a rectangular shape.
Preferably, the amplifying circuit unit includes a capacitor, a resistor, and a transistor;
the first end of the capacitor is used as the first input end, and the first end of the capacitor is respectively connected to the second end of the resistor and the base electrode of the transistor;
a second end of the resistor is used as the second input end, and the second end of the resistor is connected to the bias voltage;
a collector of the transistor is used as an output end of the amplifying circuit unit, and the collector of the transistor is connected to a power supply voltage; the emitter of the transistor is connected to ground.
Preferably, the transistor is a bipolar junction transistor.
In a second aspect, an embodiment of the present invention further provides a radio frequency chip, where the radio frequency chip is the power amplifier provided in the embodiment of the present invention.
Compared with the prior art, the power amplifier of the embodiment of the utility model sets the connection point of the bias circuit and the common connection line as the common connection point, and sets the connection point of the second input end of the amplifying circuit unit and the common connection line as the bias connection point; the common connecting line is divided into a first section and a second section, the common connecting points are arranged in the middle of the common connecting line, the number of the bias voltage connecting points in the first section is the same as that in the second section, and each bias voltage connecting point in the first section is respectively and symmetrically arranged with one bias voltage connecting point in the second section by taking the common connecting point as a center. The length of each bias voltage connection point in the common connection line is close to each other by the arrangement, so that large difference of bias resistors in the amplifying circuit unit is avoided, and the problems of circuit reliability and amplifier performance deterioration caused by asymmetry of the bias voltage connection points are solved. Therefore, the operational amplifier of the power amplifier and the radio frequency chip of the embodiment of the utility model has good circuit working performance.
Drawings
The present invention will be described in detail below with reference to the accompanying drawings. The foregoing and other aspects of the utility model will become more apparent and more readily appreciated from the following detailed description, taken in conjunction with the accompanying drawings. In the drawings, there is shown in the drawings,
fig. 1 is a circuit layout of a power amplifier of the related art;
fig. 2 is a circuit layout of a power amplifier according to an embodiment of the present invention;
fig. 3 is a circuit configuration diagram of a power amplifier according to an embodiment of the present invention;
fig. 4 is a circuit configuration diagram of an amplifying circuit unit according to an embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the utility model refers to the accompanying drawings.
The embodiments/examples described herein are specific embodiments of the present invention, are intended to be illustrative of the concepts of the present invention, are intended to be illustrative and exemplary, and should not be construed as limiting the embodiments and scope of the utility model. In addition to the embodiments described herein, those skilled in the art will be able to employ other technical solutions which are obvious based on the disclosure of the claims and the specification of the present application, and these technical solutions include the technical solutions of making any obvious replacement or modification of the embodiments described herein, and are within the scope of the present invention.
(first embodiment)
The utility model provides a power amplifier 100.
Referring to fig. 2-4, fig. 2 is a circuit layout of a power amplifier according to an embodiment of the utility model; fig. 3 is a circuit configuration diagram of a power amplifier according to an embodiment of the present invention; fig. 4 is a circuit configuration diagram of an amplifying circuit unit according to an embodiment of the present invention.
A power amplifier 100. Which comprises an amplifying circuit 1 and a biasing circuit 2 for providing a biasing voltage Vias to said amplifying circuit 1. The power amplifier 100 is a differential structure power combining power amplifier.
The amplifying circuit 1 includes a plurality of amplifying circuit units 3 arranged in parallel with each other.
The first input terminals of each of the amplifying circuit units 3 are connected to each other and serve as the input terminal PIN of the amplifying circuit 1. A second input terminal of each of the amplifying circuit units 3 is connected to the bias voltage Vias. The output terminals of each of the amplifying circuit units 3 are connected to each other and serve as the output terminal POUT of the amplifying circuit 1.
Specifically, the amplifying circuit unit 3 includes a capacitor C, a resistor R, and a transistor Q. The Transistor Q is a Bipolar Junction Transistor (BJT for short). The capacitor C is used as an input matching capacitor of the amplifying circuit unit 3, and the capacitor C is used for realizing the function of a blocking capacitor; the resistor R serves as a bias resistor of the amplifying circuit unit 3;
the circuit connection relationship of the amplifying circuit unit 3 is as follows:
and the first end of the capacitor C is used as the first input end. The first end of the capacitor C is connected to the second end of the resistor R and the base of the transistor Q, respectively.
And a second end of the resistor R is used as the second input end. And a second terminal of the resistor R is connected to the bias circuit 2. I.e. the second terminal of the resistor R receives the bias voltage Vias provided by the bias circuit 2.
The collector of the transistor Q serves as an output terminal of the amplifying circuit unit 3. And the collector of the transistor Q is connected to the supply voltage VDD. The emitter of the transistor Q is connected to ground GND.
The number of the amplifying circuit units 3 is N. N is an even number. Wherein N is less than or equal to 8.
In the present embodiment, N is 8. I.e. the amplifier circuit 1 comprises 8 amplifier circuit units 3 arranged in parallel with each other. The 8 amplifying circuit units 3 are beneficial to the symmetry of the circuit layout of the amplifying circuit units 3 and are more beneficial to shortening the length of the metal connecting wire connected with the bias circuit 2.
Each of the 8 amplifier circuit units 3 includes a resistor R. Specifically, the resistance R1, the resistance R2, the resistance R3, the resistance R4, the resistance R5, the resistance R6, the resistance R7, and the resistance R8 are arranged in this order. The resistor R1, the resistor R2, the resistor R3, the resistor R4, the resistor R5, the resistor R6, the resistor R7, and the resistor R8 all function as bias resistors in the circuit of the amplifier circuit unit 3. The 8 amplification circuit units 3 and the bias circuit 2 arranged side by side may constitute one power amplifier 100.
In the present embodiment, the amplifier circuit 1 includes a plurality of amplifier circuits. The bias circuit 2 includes a plurality of circuits. Of course, the present invention is not limited to this, and in another embodiment, the amplifier circuit 1 includes a plurality of amplifier circuits. The bias circuit 2 includes a plurality of circuits. Each of the amplifying circuits 1 is connected to one of the bias circuits 2. For example, the amplifier circuit 1 includes 4. The bias circuit 2 includes 4. Namely, the number of the amplifying circuit units 3 is 32.
The power amplifier 100 is provided with a common connection line L in a circuit layout. In this embodiment, the common connection line L is a rectangular metal line.
The connection point of the bias circuit 2 and the common connection line L is a common connection point E.
The amplifying circuit units 3 are arranged side by side on the circuit layout. The second input is connected to the common connection line L. The connection point of the second input terminal to the common connection line L is a bias connection point. Each bias connection point corresponds to one of the amplifying circuit units 3. The second input end is one end of the resistor R connected with the common connecting line L.
In this embodiment, the bias connection points are, in order, a connection point T1, a connection point T2, a connection point T3, a connection point T4, a connection point T5, a connection point T6, a connection point T7, and a connection point T8, where the bias connection point at which the resistor R1 is connected to the common connection line L is correspondingly a connection point T1; the bias voltage connection point of the resistor R2 connected to the common connection line L is the connection point T2; the bias voltage connection point of the resistor R3 connected to the common connection line L is the connection point T3; the bias voltage connection point of the resistor R4 connected to the common connection line L is the connection point T4; the bias voltage connection point of the resistor R5 connected to the common connection line L is the connection point T5; the bias voltage connection point of the resistor R6 connected to the common connection line L is the connection point T6; the bias voltage connection point of the resistor R7 connected to the common connection line L is the connection point T7; the bias connection point of the resistor R8 to the common connection line L is the connection point T8.
The common connection line L includes a first segment L1 and a second segment L2. The common connection point E is disposed in the middle of the common connection line L. And the first segment L1 and the second segment L2 are connected by the common connection point E. The number of biased connection points within the first segment L1 is the same as the number of biased connection points within the second segment L2.
In this embodiment, the connection point T1, the connection point T2, the connection point T3, and the connection point T4 are located in the first stage L1. Connection point T5, connection point T6, connection point T7, and connection point T8 are located within second segment L2.
Each of the biased connection points located within the first segment L1 is symmetrically disposed about the common connection point E with one of the biased connection points located within the second segment L2, respectively. This arrangement makes the lengths of each bias connection point in the common connection line L close, and does not cause a large difference in the bias resistance in the amplifying circuit unit 3, thereby solving the problems of circuit reliability and amplifier performance deterioration caused by asymmetry of the bias connection points.
In this embodiment, the total resistance R of all the amplifying circuit units 3 is 300 ohms, the number of the amplifying circuit units 3 is 8, and the equivalent bias resistance Rs of the amplifying circuit 1 is about 37.5 ohms when the amplifying circuit 1 composed of the 8 amplifying circuit units 3 is viewed from the common connection point E as a base point. The equivalent bias resistance Rs of the amplifier circuit 1 is much larger than the equivalent bias resistance Rs of the background art by about 10 ohms. Therefore, the equivalent bias resistance Rs of the amplifying circuit 1 is larger, and the circuit operating state of the power amplifier 100 is more stable than the performance of the power amplifier in the background art, thereby improving the reliability of the power amplifier 100 and optimizing the performance of the amplifier.
In another embodiment, if 32 amplification circuit units 3 of the power amplifier 100 of the differential structure power combining, 4 such amplification circuits 1 are required.
It should be noted that the related bias circuit, the amplifier circuit, the capacitor, the transistor and the resistor are all commonly used circuits and components in the field, and specific indexes and parameters corresponding to the circuits and the components can be adjusted according to practical applications, which is not described in detail herein.
The embodiment of the utility model also provides the radio frequency chip. The radio frequency chip includes the power amplifier 100.
Compared with the prior art, the power amplifier of the embodiment of the utility model sets the connection point of the bias circuit and the common connection line as the common connection point, and sets the connection point of the second input end of the amplifying circuit unit and the common connection line as the bias connection point; the common connecting line is divided into a first section and a second section, the common connecting points are arranged in the middle of the common connecting line, the number of the bias voltage connecting points in the first section is the same as that in the second section, and each bias voltage connecting point in the first section is respectively and symmetrically arranged with one bias voltage connecting point in the second section by taking the common connecting point as a center. The length of each bias voltage connection point in the common connection line is close to each other by the arrangement, so that large difference of bias resistors in the amplifying circuit unit is avoided, and the problems of circuit reliability and amplifier performance deterioration caused by asymmetry of the bias voltage connection points are solved. Therefore, the operational amplifier of the power amplifier and the radio frequency chip of the embodiment of the utility model has good circuit working performance.
It should be noted that the above-mentioned embodiments described with reference to the drawings are only intended to illustrate the present invention and not to limit the scope of the present invention, and it should be understood by those skilled in the art that modifications and equivalent substitutions can be made to the present invention without departing from the spirit and scope of the present invention. Furthermore, unless the context indicates otherwise, words that appear in the singular include the plural and vice versa. Additionally, all or a portion of any embodiment may be utilized with all or a portion of any other embodiment, unless stated otherwise.
Claims (8)
1. A power amplifier includes an amplifying circuit and a bias circuit that supplies a bias voltage to the amplifying circuit, the amplifying circuit including a plurality of amplifying circuit units arranged in parallel with each other; the first input end of each amplifying circuit unit is connected with each other and serves as the input end of the amplifying circuit, the second input end of each amplifying circuit unit is connected with the biasing circuit, and the output end of each amplifying circuit unit is connected with each other and serves as the output end of the amplifying circuit; it is characterized in that the preparation method is characterized in that,
the number of the amplifying circuit units is N, and N is an even number;
the power amplifier is provided with a common connecting line in a circuit layout, and a connecting point of the bias circuit and the common connecting line is a common connecting point;
the amplifying circuit units are arranged side by side on the circuit layout, the second input end is connected to the common connecting line, the connecting point of the second input end and the common connecting line is a bias voltage connecting point, and each bias voltage connecting point corresponds to one amplifying circuit unit;
the public connecting line comprises a first section and a second section, the public connecting point is arranged in the middle of the public connecting line, and the first section and the second section are connected through the public connecting point; the number of the bias voltage connection points in the first section is the same as the number of the bias voltage connection points in the second section, and each bias voltage connection point in the first section is respectively and symmetrically arranged with one of the bias voltage connection points in the second section by taking the common connection point as a center.
2. The power amplifier of claim 1, wherein N ≦ 8.
3. The power amplifier of claim 2, wherein the amplifying circuit comprises a plurality of amplifying circuits, the bias circuit comprises a plurality of biasing circuits, and each of the amplifying circuits is connected to a corresponding one of the biasing circuits.
4. The power amplifier of claim 3, wherein N is 8, the number of amplifying circuits is 4, and the number of biasing circuits is 4.
5. The power amplifier of claim 1, wherein the common connection line is a metal line having a rectangular shape.
6. The power amplifier according to claim 1, wherein the amplifying circuit unit includes a capacitor, a resistor, and a transistor;
the first end of the capacitor is used as the first input end, and the first end of the capacitor is respectively connected to the second end of the resistor and the base electrode of the transistor;
a second end of the resistor is used as the second input end, and the second end of the resistor is connected to the bias voltage;
the collector of the transistor is used as the output end of the amplifying circuit unit, and the collector of the transistor is connected to a power supply voltage; the emitter of the transistor is connected to ground.
7. The power amplifier of claim 6, wherein the transistor is a bipolar junction transistor.
8. A radio frequency chip, characterized in that the radio frequency chip comprises a power amplifier according to any one of claims 1-7.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123198299.0U CN216649629U (en) | 2021-12-17 | 2021-12-17 | Power amplifier and radio frequency chip |
| PCT/CN2022/132749 WO2023109425A1 (en) | 2021-12-17 | 2022-11-18 | Power amplifier and radio frequency chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123198299.0U CN216649629U (en) | 2021-12-17 | 2021-12-17 | Power amplifier and radio frequency chip |
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| Publication Number | Publication Date |
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| CN216649629U true CN216649629U (en) | 2022-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202123198299.0U Active CN216649629U (en) | 2021-12-17 | 2021-12-17 | Power amplifier and radio frequency chip |
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| Country | Link |
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| CN (1) | CN216649629U (en) |
| WO (1) | WO2023109425A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023109425A1 (en) * | 2021-12-17 | 2023-06-22 | 深圳飞骧科技股份有限公司 | Power amplifier and radio frequency chip |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9438191B2 (en) * | 2014-05-15 | 2016-09-06 | Freescale Semiconductor, Inc. | Radio frequency power amplifier circuit |
| KR20180110449A (en) * | 2017-03-29 | 2018-10-10 | 삼성전기주식회사 | Power amplifier |
| CN209345109U (en) * | 2018-12-19 | 2019-09-03 | 北京航空航天大学青岛研究院 | Low-noise amplifier based on global noise counteracting method |
| CN216649629U (en) * | 2021-12-17 | 2022-05-31 | 深圳飞骧科技股份有限公司 | Power amplifier and radio frequency chip |
-
2021
- 2021-12-17 CN CN202123198299.0U patent/CN216649629U/en active Active
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2022
- 2022-11-18 WO PCT/CN2022/132749 patent/WO2023109425A1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023109425A1 (en) * | 2021-12-17 | 2023-06-22 | 深圳飞骧科技股份有限公司 | Power amplifier and radio frequency chip |
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| Publication number | Publication date |
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| WO2023109425A1 (en) | 2023-06-22 |
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