CN216648609U

CN216648609U - Vertical transmission structure based on ridge gap waveguide and inverted microstrip line gap waveguide

Info

Publication number: CN216648609U
Application number: CN202220051232.XU
Authority: CN
Inventors: 陈国胜; 蒋溱; 李瑞兵
Original assignee: Shengweilun Shenzhen Communication Technology Co ltd
Current assignee: Shengweilun Shenzhen Communication Technology Co ltd
Priority date: 2022-01-10
Filing date: 2022-01-10
Publication date: 2022-05-31
Anticipated expiration: 2032-01-10

Abstract

The invention provides a vertical transmission structure based on a ridge gap waveguide and an inverted microstrip line gap waveguide, which comprises a microstrip line, wherein the vertical transmission structure comprises a top layer, a middle layer, a bottom layer and a substrate which are sequentially attached from top to bottom, the substrate is arranged on the inner surface of the bottom layer, a coupling window is further arranged at the center of the middle layer, a cavity is formed by the coupling window, a resonant patch is arranged on the surface of the cavity, a first port is further arranged on the surface of the substrate, a second port is further arranged on the inner surface of the top layer facing the middle layer, a first pin and a second pin are respectively arranged on two back surfaces of the middle layer, and the first pin and the second pin form a resonant cavity with the resonant patch fed by the input microstrip line. The vertical transmission structure has compact structure, reduces the design cost and complexity of the antenna, improves the bandwidth, and is suitable for the application of multilayer antenna arrays.

Description

Vertical transmission structure based on ridge gap waveguide and inverted microstrip line gap waveguide

Technical Field

The invention belongs to the field of wireless communication, and particularly relates to a vertical transmission structure of a ridge gap waveguide and an inverted microstrip line gap waveguide.

Background

In the technology of chip packaging and signal transmission of millimeter wave (30-300 GHz) wireless communication, most of commercial Monolithic Microwave Integrated Circuits (MMICs) need microstrip lines with media for packaging and gold wire bonding for assembly, so that it is very important to transition from the microstrip lines directly to gap waveguide transmission lines. However, in the millimeter wave band (30-300 GHz), the dielectric loss and dispersion loss of the microstrip line cannot be tolerated. The inverted microstrip line gap waveguide technology proposed in recent years can completely overcome the very high dielectric loss of the microstrip line, so that the chip of the MMIC is packaged by utilizing the inverted microstrip line gap waveguide technology; the traditional rectangular waveguide has small loss and high efficiency, but has great processing difficulty in a millimeter wave band and narrow frequency band. The newly invented ridge gap waveguide can completely overcome the problems of the conventional rectangular waveguide.

The invention discloses a method capable of overcoming high dielectric loss and dispersion loss generated by a traditional microstrip line in a millimeter wave frequency band (30-300 GHz) packaging MMIC (monolithic microwave integrated circuit). the inverted microstrip line gap waveguide structure of the packaging MMIC can complete vertical transmission conversion with ridge gap waveguide, and the ultralow loss packaging of the MMIC in the millimeter wave frequency band is completed.

SUMMERY OF THE UTILITY MODEL

In order to solve the packaging bottleneck and the defects of the MMIC in the millimeter wave frequency band, the invention provides a vertical transmission structure based on ridge gap waveguides and inverted microstrip line gap waveguides, and the technical scheme is as follows:

the utility model provides a perpendicular transmission structure based on ridge gap waveguide and inversion microstrip line gap waveguide, includes the microstrip line, perpendicular transmission structure further includes top layer, intermediate level, bottom, the matrix from last laminating down in proper order, the matrix sets up the internal surface at the bottom, the central point in intermediate level puts and further sets up the coupling window, the coupling window vacuole formation, the resonance paster sets up on the cavity surface.

Further, the substrate surface is further provided with a first port, and the top layer is further provided with a second port towards the inner surface of the intermediate layer.

Furthermore, a first pin and a second pin are respectively arranged on two back faces of the middle layer, and the first pin and the second pin form a resonant cavity together with the input microstrip line fed resonant patch.

Furthermore, a plurality of metal columns are respectively arranged on the upper surface and the lower surface of the middle layer, the cross sections of the metal columns are square, the metal columns at least comprise two sizes, and the value ranges of the two sizes are 0.5 mm-0.7 mm.

Further, the microstrip line parameter is 50 ohms.

Further, the waveguide of the vertical transmission structure is WR-12.

Further, the waveguide material is brass, and gold with the thickness of 0.5 micron is electroplated on the surface of the waveguide.

Further, the matrix is 0.127mm Rogers3003 material.

Furthermore, the length range of the coupling window is 2 mm-3.2 mm, the width range is 1.1 mm-2 mm, the length range of the resonance patch is 2.4 mm-4 mm, and the width range is 1.3 mm-2.8 mm.

Further, the vertical transmission structure is further provided with a via hole in response to the resonant frequency, and the length L of the cross section of the via hole₃Taking the width W of 2.4 mm-2.8 mm₃The value range is 1.2 mm-1.5 mm.

The vertical transmission structure has compact structure, reduces the design cost and complexity of the antenna, improves the bandwidth, and is suitable for the application of multilayer antenna arrays.

Drawings

FIG. 1: the overall structure of the vertical transmission structure is schematically shown.

FIG. 2: the structure of the inverted microstrip line gap waveguide and the WR-12 waveguide is schematically converted.

FIG. 3: the structure conversion diagram between the 50 ohm passive MMIC and the WR-12 waveguide of the integrated inverted microstrip line gap waveguide is shown.

FIG. 4: the invention inverts the bottom structure conversion object diagram between the microstrip line gap waveguide and the WR-12 waveguide.

FIG. 5: the invention inverts the top layer structure conversion object diagram between the microstrip line gap waveguide and the WR-12 waveguide.

FIG. 6: the bottom view structure of the middle layer between the inverted microstrip line gap waveguide and the WR-12 waveguide is converted into an object diagram.

FIG. 7: the top view structure of the middle layer between the inverted microstrip line gap waveguide and the WR-12 waveguide is converted into a real object diagram.

FIG. 8: the invention relates to ridge gap waveguide and MMIC measurement results.

Description of the drawing reference numbers: a first port 101, a second port 102, a top layer 103, a middle layer 104, a bottom layer 105, a substrate 106, a coupling window 107, a cavity 108, a resonator patch 109, a first lead 110, a second lead 111, and a detent 112.

Detailed Description

The design method of the vertical transmission structure based on a gap waveguide and an inverted microstrip slot waveguide of the present invention is described in detail below by way of embodiments, examples of which are illustrated in the accompanying drawings, wherein like reference numerals denote like elements throughout. The following examples are illustrative only and are not to be construed as limiting the invention.

The invention aims to provide a vertical transmission structure based on a ridge gap waveguide and an inverted microstrip gap waveguide, which transfers the ridge gap waveguide to the microstrip line and transmits electromagnetic waves through the inverted microstrip gap waveguide.

Referring to fig. 1, an overall structure schematic diagram of a vertical transmission structure of the present invention is shown, the vertical transmission structure of the present invention sequentially includes a top layer 103, a middle layer 104, a bottom layer 105 and a substrate 106 attached from top to bottom, wherein the substrate 106 is disposed on an inner surface of the bottom layer 105, a first port 101 is further disposed on a surface of the substrate 106, a second port 102 is disposed on an inner surface of the top layer 103 facing the middle layer 104, a plurality of metal pillars are respectively disposed on an upper surface and a lower surface of the middle layer 104, cross sections of the metal pillars are square, the metal pillars have at least two sizes, a value range of the two cross section sizes a1 and a2 is 0.5mm to 0.7mm, a coupling window 107 is further disposed at a center position of the middle layer, the coupling window 107 forms a cavity 108, the resonant patch 109 is disposed on a surface of the cavity 108, the second port 102 extends to a position of a center of the vertical transmission structure through a microstrip line and is disposed with the coupling window 107, the coupling window 107 has a length l₁The range of the value is 2 mm-3.2 mm, and the width is w₁The value range is 1.1 mm-2 mm, w_pThe ridge width of the transition ridge waveguide ranges from 0.4mm to 0.7mm, and the length of the resonant patch 109 is l₂The range of the value is 2.4 mm-4 mm, and the width is w₂The value range is 1.3 mm-2.8 mm.

According to the invention, a resonance patch 109 is coupled to realize transition between a microstrip and a ridge Gap waveguide, a first pin 110 and a second pin 111 are respectively arranged on two back faces of an intermediate layer 104, a specific resonance cavity is formed above the first pin 110, the second pin 111 and a patch fed by an input microstrip line, after resonance of the resonance cavity and the resonance patch 109 is optimized, an Electromagnetic signal of the microstrip line is effectively coupled to the ridge Gap waveguide through a coupling window 107 of the intermediate layer 104, an MMIC is packaged by an Electromagnetic Band Gap (EBG) pin, and the first pin 110 and the second pin 111 block an interference signal, so that a good space is provided for assembly.

Referring to fig. 2, the schematic diagram of the structural transition between the inverted microstrip line gap waveguide and the WR-12 waveguide of the present invention is shown, and the vertical transmission structure of the present invention adopts a 50 ohm microstrip line and a 50 micron GaAs substrateA passive MMIC, the vertical transmission structure being provided with a via hole for responding to a resonance frequency, a length L of a cross section of the via hole₃The value is 2.4 mm-2.8 mm, and the width W₃The value range is 1.2 mm-1.5 mm.

Further referring to fig. 3 is a schematic diagram of the structural transition between the 50 ohm passive MMIC and the WR-12 waveguide of the integrated inverted microstrip line gap waveguide of the present invention, both ends transition to the WR-12 rectangular waveguide.

Further referring to fig. 4, a bottom layer structure transition object diagram between the inverted microstrip line gap waveguide and the WR-12 waveguide of the present invention, the bottom layer structure is further provided with a positioning groove 112 for facilitating positioning when an upper layer structure is installed, fig. 5 is a top layer structure transition object diagram between the inverted microstrip line gap waveguide and the WR-12 waveguide of the present invention, fig. 6 is a bottom layer structure transition object diagram between the inverted microstrip line gap waveguide of the present invention and the WR-12 waveguide, fig. 7 is a middle layer top view structure transition object diagram between the inverted microstrip line gap waveguide of the present invention and the WR-12 waveguide, the waveguide material is brass, gold with a thickness of 0.5 micron is plated on the surface, the substrate is gerros 3003 material with a thickness of 0.127mm, and the line length is about 10.6 mm.

Considering that the inverted microstrip line gap waveguide has an insertion loss of about 0.8dB/cm at 79GHz, the calculated insertion loss is about 0.85dB, the loss of each standard waveguide in transition to the inverted microstrip line gap waveguide is about 0.3dB, and as a test result, referring to a ridge gap waveguide and MMIC measurement result of the invention shown in FIG. 8, the MMIC integrated with the ridge gap waveguide has a small signal gain larger than 17dB and a reflection coefficient larger than-10 dB within a range of 69 GHz-86 GHz.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications made based on the concept of the present invention are within the scope of the present invention.

Claims

1. The utility model provides a perpendicular transmission structure based on ridge gap waveguide and inversion microstrip line gap waveguide, includes the microstrip line, its characterized in that, perpendicular transmission structure includes top layer, intermediate level, bottom, the matrix from last laminating down in proper order, the matrix sets up the internal surface at the bottom, the central point in intermediate level puts and further sets up the coupling window, the coupling window forms the cavity, the cavity surface further sets up the resonance paster.

2. The vertical transport structure of claim 1, wherein the substrate surface is further provided with first ports and the top layer is further provided with second ports towards the inner surface of the middle layer.

3. The vertical transmission structure of claim 1, wherein a first pin and a second pin are respectively disposed on two back surfaces of the middle layer, and the first pin and the second pin form a resonant cavity with the input microstrip line fed resonant patch.

4. The vertical transport structure of claim 1, wherein a plurality of metal posts are respectively disposed on the upper surface and the lower surface of the middle layer, the cross section of each metal post is square, the metal posts at least comprise two sizes, and the two sizes range from 0.5mm to 0.7 mm.

5. The vertical transmission structure of claim 1, wherein the microstrip line parameter is 50 ohms.

6. The vertical transport structure of claim 1 wherein the waveguide of the vertical transport structure is WR-12.

7. The vertical transport structure of claim 6, wherein the waveguide material is brass and the waveguide surface is plated with 0.5 micron thickness gold.

8. The vertical transport structure of claim 1 wherein the matrix is 0.127mm Rogers3003 material.

9. The vertical transmission structure of claim 1, wherein the coupling window has a length ranging from 2mm to 3.2mm and a width ranging from 1.1mm to 2mm, and the resonant patch has a length ranging from 2.4mm to 4mm and a width ranging from 1.3mm to 2.8 mm.

10. The vertical transmission structure of claim 1, wherein the vertical transmission structure is further provided with a via responsive to a resonant frequency, a length L of a cross section of the via₃Taking 2.4 mm-2.8 mm, width W₃The value range is 1.2 mm-1.5 mm.