CN216563098U

CN216563098U - IGBT crimping structure

Info

Publication number: CN216563098U
Application number: CN202122602081.0U
Authority: CN
Inventors: 袁磊; 王凯锋
Original assignee: Hefei Zhongheng Micro Semiconductor Co ltd
Current assignee: Hefei Zhongheng Micro Semiconductor Co ltd
Priority date: 2021-10-27
Filing date: 2021-10-27
Publication date: 2022-05-17
Anticipated expiration: 2031-10-27

Abstract

The utility model provides an IGBT crimping structure, comprising: the lower pressing plate is positioned at the lower end of the upper cover plate, the lower end of the lower pressing plate is connected with a limiting block, and a threaded column is fixed at the upper end of the lower pressing plate; the lower ends of the connecting plate columns are fixed with the lower cover plate through fastening screws, and IGBT silicon wafers are arranged between the connecting plate columns; and the limiting block is positioned at the lower end of the IGBT silicon wafer, and a heat dissipation opening is formed in the side surface of the limiting block. The utility model solves the problems that the existing IGBT crimping is connected in a welding mode, local replacement cannot be carried out when the existing IGBT crimping is damaged, only a fixed number of IGBTs can be crimped, the practicability is low, and the normal work of a crimped IGBT group is influenced.

Description

IGBT crimping structure

Technical Field

The utility model relates to the field of IGBT compression joint structures, in particular to an IGBT compression joint structure.

Background

IGBT, insulated gate bipolar transistor, it is the compound full control type voltage drive formula power semiconductor device that comprises BJT and MOS, have MOSFET's high input impedance and GTR's low conduction voltage drop two-sided advantage concurrently, current IGBT crimping is connected through the welded mode, can't carry out local change when taking place to damage, can only the crimping IGBT of fixed quantity, and the practicality is lower, influences the problem of the normal work of the IGBT group of crimping.

SUMMERY OF THE UTILITY MODEL

In order to overcome the defects in the prior art, the IGBT crimping structure is provided so as to solve the problems that the existing IGBT crimping is connected in a welding mode, local replacement cannot be carried out when damage occurs, only IGBT with fixed quantity can be crimped, the practicability is low, and the normal work of an IGBT group to be crimped is influenced.

In order to achieve the above object, there is provided an IGBT crimping structure including:

the lower pressing plate is positioned at the lower end of the upper cover plate, the lower end of the lower pressing plate is connected with a limiting block, and a threaded column is fixed at the upper end of the lower pressing plate;

the lower ends of the connecting plate columns are fixed with the lower cover plate through fastening screws, and IGBT silicon wafers are arranged between the connecting plate columns;

and the limiting block is positioned at the lower end of the IGBT silicon wafer, and a heat dissipation opening is formed in the side surface of the limiting block.

Furthermore, the surface of the upper cover plate and the surface of the lower cover plate are welded with connection blocks, fixing holes are formed in the connection blocks, and compression springs are fixed between the upper cover plate and the lower pressing plate.

Furthermore, a rotating handle is fixed at the upper end of the threaded column, and the threaded column penetrates through the middle part of the upper cover plate; and the threaded column is movably connected with the upper cover plate through threads.

Further, the upper end surface of the connecting plate column is provided with a strip-shaped groove, an adjusting plate column is arranged inside the strip-shaped groove, and the upper end of the adjusting plate column is fixed with the upper cover plate through a fastening screw.

Further, stud holes are uniformly distributed on the surface of the adjusting plate column, and bolt fixing pieces are fixed in the stud holes; and the bolt fixing piece is fixedly connected with the connecting plate column and the adjusting plate column.

Furthermore, four groups of shock absorption columns are fixed on the upper surface of the lower cover plate, a cross support plate is fixed between the lower cover plate and the IGBT silicon chips, and the limiting block is fixed between the upper IGBT silicon chip and the lower IGBT silicon chip.

Furthermore, an annular baffle is arranged outside the shock absorption column; and the height of the annular baffle is half of that of the shock absorption column, and the upper end of the cross supporting plate is bonded with an elastic shock absorption pad made of rubber.

Furthermore, concave grooves are formed in the upper end and the lower end of the limiting block, clamping ends are arranged on the left side face and the right side face of the limiting block, and the clamping ends are in a horizontal T shape; and the lower end of the IGBT silicon chip is clamped.

The IGBT compression joint structure has the beneficial effects that the length of the combination of the adjusting plate column and the connecting plate column is adjusted by fixing and disassembling the adjusting plate column and the connecting plate column through the bolt fixing piece, the partially damaged IGBT silicon wafer is convenient to replace, more IGBT silicon wafers are compressed, the lower pressing plate is pressed downwards through the rotation of the threaded column, a plurality of groups of IGBT silicon wafers are convenient to compress, the damping columns and the cross supporting plate play a role in supporting and damping the IGBT silicon wafers, the damage to the IGBT silicon wafers caused by overlarge pressure during pressing is avoided, the IGBT silicon wafers are limited in the concave grooves by the clamping ends on the side surfaces of the limiting blocks, the displacement during pressing of the IGBT silicon wafer group is avoided, and the problem that the normal work of the compression-jointed IGBT group is influenced is solved.

Drawings

Fig. 1 is a schematic cross-sectional structure diagram of an IGBT crimping structure according to an embodiment of the present invention.

Fig. 2 is a schematic top view of a lower cover plate according to an embodiment of the utility model.

Fig. 3 is a schematic diagram of a right-view structure of a connecting plate column according to an embodiment of the utility model.

Fig. 4 is a schematic view of a connection structure between the lower pressure plate, the limiting block and the IGBT according to the embodiment of the present invention.

1. An upper cover plate; 2. a lower pressing plate; 201. a threaded post; 202. rotating the handle; 3. a joining block; 301. a fixing hole; 4. a compression spring; 5. an IGBT silicon wafer; 6. connecting the plate columns; 601. adjusting the plate column; 602. a bolt fixing member; 603. a stud hole; 604. a strip-shaped groove; 7. a shock-absorbing post; 701. an annular baffle; 702. a cross support plate; 8. a lower cover plate; 9. fastening screws; 10. a limiting block; 1001. a heat dissipation port; 1002. a clamping end; 1003. a concave groove.

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

Fig. 1 is a schematic cross-sectional structure diagram of an IGBT crimping structure according to an embodiment of the present invention, fig. 2 is a schematic top-view structure diagram of a lower cover plate according to an embodiment of the present invention, fig. 3 is a schematic right-view structure diagram of a regulator block according to an embodiment of the present invention, and is a schematic connection structure diagram between a lower pressure plate, a compression block, and an IGBT according to an embodiment of the present invention.

Referring to fig. 1 to 4, the present invention provides an IGBT crimping structure including: the lower pressing plate 2, the connecting plate column 6 and the limiting block 10.

The lower pressing plate 2 is located at the lower end of the upper cover plate 1, the lower end of the lower pressing plate 2 is connected with a limiting block 10, and a threaded column 201 is fixed at the upper end of the lower pressing plate 2.

Connecting plate post 6 is located upper cover plate 1 left and right sides, and 6 lower extremes of connecting plate post are fixed mutually with apron 8 down through fastening screw 9, are provided with IGBT silicon chip 5 between the connecting plate post 6.

And the limiting block 10 is positioned at the lower end of the IGBT silicon chip 5, and a heat dissipation opening 1001 is formed in the side surface of the limiting block 10.

The existing IGBT crimping is connected in a welding mode, local replacement cannot be carried out when damage occurs, only the IGBTs with fixed quantity can be crimped, the practicability is low, and the problem that the normal work of the crimped IGBT group is influenced. Therefore, the IGBT crimping structure utilizes the adjusting plate column and the connecting plate column to be fixed and disassembled through the bolt fixing piece to adjust the combined length of the adjusting plate column and the connecting plate column, the partially damaged IGBT silicon wafers are convenient to replace, more IGBT silicon wafers are crimped, the lower pressing plate is pressed downwards through the rotation of the threaded column, a plurality of groups of IGBT silicon wafers are convenient to compress, the shock absorption columns and the cross supporting plate play a role in supporting and absorbing the IGBT silicon wafers, the IGBT silicon wafers are prevented from being damaged due to overlarge force during pressing, the IGBT silicon wafers are limited in the concave groove by the clamping end on the side face of the limiting block, the IGBT silicon wafers are prevented from shifting during compressing, and the problem that the normal work of the crimped IGBT group is influenced is solved.

The surface welding of upper cover plate 1 and lower apron 8 has linking piece 3, links up the inside fixed orifices 301 that is provided with of piece 3, is fixed with compression spring 4 between upper cover plate 1 and the lower pressure plate 2.

The connecting block 3 is convenient for integrally fixing the IGBT compression joint structure, the IGBT compression joint structure is convenient to connect and fix, and the fixing screws in the fixing holes 301 can complete the connection and fixation of the IGBT compression joint structure. The compression spring 4 is used for pressing the lower pressing plate 2 downwards, so that the IGBT silicon chip 5 is tightly pressed and connected conveniently.

A rotating handle 202 is fixed at the upper end of the threaded column 201, and the threaded column 201 penetrates through the middle part of the upper cover plate 1; and the threaded column 201 is movably connected with the upper cover plate 1 through threads.

Rotatory handle 202 that rotates, screw thread post 201 agrees with mutually with the inside internal thread of upper cover plate 1, makes screw thread post 201 remove, drives holding down plate 2's downward movement, conveniently carries out the work that compresses tightly IGBT silicon chip 5, the quick IGBT silicon chip 5 that compresses tightly of being convenient for.

The upper end surface of the connecting plate column 6 is provided with a strip-shaped groove 604, the inside of the strip-shaped groove 604 is provided with an adjusting plate column 601, and the upper end of the adjusting plate column 601 is fixed with the upper cover plate 1 through a fastening screw 9.

The connecting plate column 6 moves inside the strip-shaped groove 604 to adjust the total length of the connection between the connecting plate column 6 and the adjusting plate column 601, so that more IGBT silicon wafers 5 can be compressed between the upper cover plate 1 and the lower cover plate 8, and the applicability of the IGBT compression joint structure is improved conveniently.

Stud holes 603 are uniformly distributed on the surface of the adjusting plate column 601, and bolt fixing pieces 602 are fixed in the stud holes 603; and the bolt fixing member 602 fixedly connects the connecting plate column 6 and the adjusting plate column 601.

The inside stud hole 603 that also is provided with of connecting plate post 6 upper end, the stud hole 603 on the surface of the regulating plate post 601 of being convenient for remove coincides mutually with connecting plate post 6, uses bolt fastening piece 602 to fix, can dismantle between regulating plate post 601 and the connecting plate post 6, is convenient for change partial IGBT silicon chip 5 of damage.

Four groups of shock absorption columns 7 are fixed on the upper surface of the lower cover plate 8, a cross support plate 702 is fixed between the lower cover plate 8 and the IGBT silicon chips 5, and a limiting block 10 is fixed between the upper IGBT silicon chip 5 and the lower IGBT silicon chip 5.

The shock absorption column 7 plays a shock absorption role and protects the IGBT silicon chip 5 inside. The cross support plate 702 has the functions of shock absorption and support, and forms a base of a plurality of groups of IGBT silicon wafers 5. The limiting block 10 is clamped with the two IGBT silicon chips 5, so that the IGBT silicon chips 5 are not displaced.

An annular baffle 701 is arranged outside the shock absorption column 7; the height of the ring-shaped baffle 701 is half of the height of the shock-absorbing column 7, and an elastic shock-absorbing pad made of rubber is bonded to the upper end of the cross-shaped support plate 702.

When the lower pressing plate 2 at the upper end presses down the IGBT silicon chip 5 inside, the shock absorption columns 7 at the bottom are compressed by the pressure at the upper end, when the shock absorption columns 7 are compressed to the annular baffle plate 701 to rise, the annular baffle plate 701 blocks the downward pressure, and the IGBT silicon chip 5 is conveniently crushed by force and violence.

The upper end and the lower end of the limiting block 10 are provided with concave grooves 1003, the left side and the right side of the limiting block 10 are provided with clamping ends 1002, and the clamping ends 1002 are in a horizontal T shape; and the upper end and the lower end of the IGBT silicon chip 5 are clamped.

The concave groove 1003 is used for contacting with the IGBT silicon chip 5, so that the two IGBT silicon chips 5 can be conveniently connected. The clamping ends 1002 are clamped at two sides of the IGBT silicon chip 5, so that the IGBT silicon chip 5 is convenient to limit to move, and the multiple groups of IGBT silicon chips 5 are prevented from being pressed down to move.

The IGBT crimping structure can effectively solve the problem of influencing the normal work of the crimped IGBT group, is convenient for replacing the IGBT silicon chip with local damage, avoids the displacement when the IGBT silicon chip group is compressed, improves the stability of the crimping structure, and is suitable for the IGBT crimping structure.

Claims

1. An IGBT crimp connection structure, comprising:

the lower pressing plate (2) is positioned at the lower end of the upper cover plate (1), the lower end of the lower pressing plate (2) is connected with a limiting block (10), and a threaded column (201) is fixed at the upper end of the lower pressing plate (2);

the connecting plate columns (6) are positioned on the left side and the right side of the upper cover plate (1), the lower ends of the connecting plate columns (6) are fixed with the lower cover plate (8) through fastening screws (9), and IGBT silicon wafers (5) are arranged between the connecting plate columns (6);

the limiting block (10) is located at the lower end of the IGBT silicon chip (5), and a heat dissipation opening (1001) is formed in the side face of the limiting block (10).

2. The IGBT crimping structure according to claim 1, characterized in that the joint blocks (3) are welded on the surfaces of the upper cover plate (1) and the lower cover plate (8), fixing holes (301) are arranged inside the joint blocks (3), and compression springs (4) are fixed between the upper cover plate (1) and the lower press plate (2).

3. The IGBT crimping structure according to claim 1, characterized in that a rotating handle (202) is fixed at the upper end of the threaded column (201), and the threaded column (201) penetrates through the middle part of the upper cover plate (1); and the threaded column (201) is movably connected with the upper cover plate (1) through threads.

4. The IGBT crimping structure according to claim 1, characterized in that the upper end surface of the connecting plate column (6) is provided with a strip-shaped groove (604), the inside of the strip-shaped groove (604) is provided with an adjusting plate column (601), and the upper end of the adjusting plate column (601) is fixed with the upper cover plate (1) through a fastening screw (9).

5. The IGBT crimping structure according to claim 4, wherein stud holes (603) are uniformly distributed on the surface of the adjusting plate column (601), and a bolt fixing member (602) is fixed inside the stud holes (603); and the bolt fixing piece (602) is fixedly connected with the connecting plate column (6) and the adjusting plate column (601).

6. The IGBT crimping structure according to claim 1, wherein four groups of shock-absorbing columns (7) are fixed on the upper surface of the lower cover plate (8), a cross support plate (702) is fixed between the lower cover plate (8) and the IGBT silicon wafer (5), and the limiting block (10) is fixed between the upper IGBT silicon wafer and the lower IGBT silicon wafer (5).

7. The IGBT crimp connection structure according to claim 6, wherein the shock absorption columns (7) are externally provided with annular baffles (701); the height of the annular baffle (701) is half of that of the shock absorption column (7), and an elastic shock absorption pad made of rubber is bonded at the upper end of the cross support plate (702).

8. The IGBT crimping structure according to claim 1, wherein concave grooves (1003) are formed in the upper end and the lower end of the limiting block (10), clamping ends (1002) are formed in the left side and the right side of the limiting block (10), and the clamping ends (1002) are in a horizontal T shape; the upper end and the lower end of the IGBT silicon chip (5) are clamped.