CN216558337U - Heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment - Google Patents
Heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment Download PDFInfo
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- CN216558337U CN216558337U CN202122693085.4U CN202122693085U CN216558337U CN 216558337 U CN216558337 U CN 216558337U CN 202122693085 U CN202122693085 U CN 202122693085U CN 216558337 U CN216558337 U CN 216558337U
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Abstract
The utility model relates to a heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment, it includes diffusion furnace, plasma enhanced chemical vapor deposition equipment and cooling tower, be provided with exhaust apparatus between diffusion furnace and plasma enhanced chemical vapor deposition equipment and the cooling tower, and diffusion furnace and plasma enhanced chemical vapor deposition equipment are linked together through exhaust apparatus and cooling tower or atmosphere, the last valve mechanism that is used for switching exhaust apparatus's air exhaust route that is provided with of exhaust apparatus. The application has the following effects: in winter, the diffusion furnace and the plasma enhanced chemical vapor deposition equipment are controlled by the valve mechanism to be communicated with the cooling tower through the exhaust device, the diffusion furnace and the plasma enhanced chemical vapor deposition equipment lead heat generated in the process of manufacturing the silicon wafer to the cooling tower, the cooling tower utilizes the heat to heat and raise the temperature for heat exchange, and the filler of the cooling tower is not easy to freeze due to the over-low ambient temperature, so that the purpose of recovering the heat is achieved.
Description
Technical Field
The application relates to the technical field of heat recovery, in particular to a heat recovery system of a diffusion furnace and a plasma enhanced chemical vapor deposition device.
Background
In a normal operation state of a conventional diffusion furnace and a Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus, a heating system, such as a heating quartz tube, a heating assembly, a thermocouple, and the like, is arranged in a furnace body, and thus a large amount of heat is generated during operation. The partial heat is usually directly exhausted to the atmosphere through an exhaust system in the manufacturing process of the battery piece, so that energy waste is caused, and improvement is urgently needed.
SUMMERY OF THE UTILITY MODEL
In order to fully utilize the heat generated by the diffusion furnace and the plasma enhanced chemical vapor deposition equipment and reduce the waste of energy, the application provides a heat recovery system of the diffusion furnace and the plasma enhanced chemical vapor deposition equipment.
The heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment provided by the application adopts the following technical scheme:
a heat recovery system of a diffusion furnace and a plasma enhanced chemical vapor deposition device comprises the diffusion furnace, the plasma enhanced chemical vapor deposition device and a cooling tower, wherein an exhaust device is arranged between the diffusion furnace and the plasma enhanced chemical vapor deposition device and between the diffusion furnace and the cooling tower, the diffusion furnace and the plasma enhanced chemical vapor deposition device are communicated with the cooling tower or the atmosphere through the exhaust device, and a valve mechanism used for switching an exhaust path of the exhaust device is arranged on the exhaust device.
Optionally, the exhaust device includes a heat exhaust pipe, a heat recovery pipe and an external exhaust pipe, the heat recovery pipe and the external exhaust pipe are fixedly connected and form a three-way pipeline structure, the heat exhaust pipe is communicated with the diffusion furnace and the pipe P, the heat recovery pipe is communicated with the cooling tower, and the external exhaust pipe is communicated with the atmosphere.
Optionally, a heat exhaust fan is arranged on the heat exhaust pipe.
Optionally, a standby hot exhaust fan is further arranged on the hot exhaust pipe.
Optionally, a heat insulation layer and/or a protective layer is/are arranged outside the exhaust device, the hot exhaust fan and the standby hot exhaust fan.
Optionally, the valve mechanism includes an outer air exhaust valve disposed on the outer air exhaust pipe and a recovery air valve disposed on the heat recovery pipe.
Optionally, the exhaust device and the cooling tower are both provided with temperature measuring devices.
Optionally, the cooling tower is used for being connected with heat pump set and carrying out heat exchange, heat pump set is used for being connected with the air conditioning cabinet and carrying out heat exchange, the air conditioning cabinet is used for the indoor heating that heats.
Optionally, a cooling water circulation pump is arranged at the joint of the cooling tower and the heat pump unit.
Optionally, a system water circulating pump is arranged at the joint of the heat pump unit and the air conditioning unit.
In summary, the present application includes at least one of the following beneficial technical effects:
1. in winter, the valve mechanism controls the diffusion furnace and the plasma enhanced chemical vapor deposition equipment to be communicated with the cooling tower through the exhaust device, the diffusion furnace and the plasma enhanced chemical vapor deposition equipment lead heat generated in the process of manufacturing the silicon wafer to the cooling tower, the cooling tower utilizes the heat to heat and exchange the temperature, and the filler of the cooling tower is not easy to freeze due to the over-low ambient temperature, so that the purpose of recovering the heat is achieved;
2. the hot exhaust pipe is simultaneously provided with the hot exhaust fan and the standby hot exhaust fan, when the hot exhaust fan fails, the standby hot exhaust fan can be started to accelerate the airflow in the hot exhaust pipe, and the working stability of a heat recovery system of the diffusion furnace and the plasma enhanced chemical vapor deposition equipment is ensured;
3. the cooling tower indirectly utilizes heat, and the heat recovered by the diffusion furnace and the plasma enhanced chemical vapor deposition equipment is used for heating a workshop in winter; compared with a mode of directly leading the exhaust gas flow of the diffusion furnace and the plasma enhanced chemical vapor deposition equipment into the chamber and directly utilizing the heat of the diffusion furnace and the plasma enhanced chemical vapor deposition equipment, the method is more environment-friendly.
Drawings
Fig. 1 is a schematic structural diagram of a diffusion furnace and a heat recovery system of a plasma enhanced chemical vapor deposition apparatus according to an embodiment of the present application.
Description of reference numerals: 1. a diffusion furnace; 2. plasma enhanced chemical vapor deposition equipment; 3. a cooling tower; 31. a cooling water circulation pipe; 32. a cooling water circulation pump; 4. an air exhaust device; 41. a heat exhaust duct; 411. a heat exhausting fan; 412. a standby heat exhaust fan; 42. a heat recovery tube; 43. an outer exhaust pipe; 5. a valve mechanism; 51. an outer exhaust valve; 52. a recovery air valve; 6. a heat pump unit; 61. a system water circulation pipeline; 62. a system water circulating pump; 7. an air conditioning box.
Detailed Description
The present application is described in further detail below with reference to fig. 1.
The embodiment of the application discloses a heat recovery system of a diffusion furnace and a plasma enhanced chemical vapor deposition device. Referring to fig. 1, the heat recovery system of the diffusion furnace and the pecvd apparatus includes a diffusion furnace 1, a pecvd apparatus 2, and a cooling tower 3, and specifically, the pecvd apparatus 2 may be a tube-type pecvd apparatus or a plate-type pecvd apparatus, and the embodiment takes the former as an example.
An exhaust device 4 is arranged between the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 and the cooling tower 3, and the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 are communicated with the cooling tower 3 or the atmosphere through the exhaust device 4. When the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 exhaust air to the cooling tower 3 or the atmosphere through the exhaust device 4, the heat generated in the silicon wafer manufacturing process can be simultaneously supplied to the cooling tower 3 or exhausted to the atmosphere. The air discharge device 4 is provided with a valve mechanism 5 for switching an air discharge path of the air discharge device 4.
Specifically, when the temperature of the cooling tower 3 is high, such as in summer, the valve mechanism 5 controls the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 to be communicated with the atmosphere through the exhaust device 4, and at the moment, the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 directly exhaust heat generated in the silicon wafer manufacturing process to the atmosphere; when the temperature of the cooling tower 3 is low, for example, in winter, the valve mechanism 5 controls the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 to be communicated with the cooling tower 3 through the exhaust device 4, at the moment, the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 lead heat generated in the silicon wafer manufacturing process to the cooling tower 3, the heat can be used for heating and heat exchange of circulating water of the cooling tower 3, and the phenomenon that the filler of the cooling tower 3 is frozen due to too low ambient temperature is prevented, so that the purpose of recovering the heat is achieved.
Referring to fig. 1, the exhaust device 4 includes a heat exhaust pipe 41, a heat recovery pipe 42, and an outer exhaust pipe 43, and the heat exhaust pipe 41, the heat recovery pipe 42, and the outer exhaust pipe 43 are fixedly connected to form a three-way pipe structure. The thermal exhaust pipe 41 is fixedly arranged on the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 and used for exhausting air of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2, so that the thermal exhaust pipe 41 is communicated with the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2. The diffusion furnace 1 and the plasma enhanced chemical vapor deposition apparatus 2 may use the same heat exhaust pipe 41, or may use one heat exhaust pipe 41, for example, in this embodiment.
In order to accelerate the exhaust rate of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 and to lead the heat of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 out rapidly in the process, the heat exhaust pipe 41 is provided with a heat exhaust fan 411. Specifically, the hot exhaust fan 411 may be provided at an end of the hot exhaust duct 41 remote from the diffusion furnace 1 and the plasma enhanced chemical vapor deposition apparatus 2. When the heat exhausting fan 411 rotates, the airflow in the heat exhausting pipe 41 can be forcibly accelerated.
Referring to fig. 1, a standby hot air exhaust fan 412 is further provided on the hot air exhaust duct 41. When the hot exhaust fan 411 fails, the standby hot exhaust fan 412 can be started to accelerate the airflow in the hot exhaust pipe 41, so that the working stability of the heat recovery system of the diffusion furnace and the plasma enhanced chemical vapor deposition equipment is ensured.
The heat recycling pipe 42 is fixedly disposed on the cooling tower 3, and specifically, the heat recycling pipe 42 may be fixedly disposed on an air inlet louver of the cooling tower 3. The heat recovery pipe 42 is used for recovering heat generated during the process of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition apparatus 2, and therefore the heat recovery pipe 42 is communicated with the cooling tower 3. When heat recovery is needed, for example, in winter, the exhaust gas flows of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 sequentially pass through the heat exhaust pipe 41 and the heat recovery pipe 42 to enter the cooling tower 3, so that the purpose of supplying heat to the easy cooling tower 3 for temperature rise and heat exchange is achieved.
The outer exhaust duct 43 is fixed between the heat exhaust duct 41 and the heat recovery duct 42, and is used for leading the exhaust gas flow of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition apparatus 2 to the atmosphere, so that the outer exhaust duct 43 is communicated with the atmosphere. When heat recovery is not needed, for example, in summer, the exhaust air flows of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 are exhausted to the atmosphere through the heat exhaust pipe 41 and the outer exhaust pipe 43 in sequence, and heat is exhausted together in the process.
The exhaust device 4, the hot air exhaust fan 411 and the standby hot air exhaust fan 412 are all provided with heat insulation layers. The heat-insulating layer is used for reducing heat loss when exhaust airflow passes through the exhaust device 4, the hot exhaust fan 411 and the standby hot exhaust fan 412, so that the purposes of insulating the exhaust device 4, the hot exhaust fan 411 and the standby hot exhaust fan 412 in summer and insulating the exhaust device 4 in winter are achieved, and meanwhile, the heat recovery rate is improved in winter. Protective layers are arranged outside the exhaust device 4, the hot air exhaust fan 411 and the standby hot air exhaust fan 412. The protective layer is used to form external protection for the air exhaust device 4, the hot air exhaust fan 411 and the standby hot air exhaust fan 412, so as to reduce damage to the air exhaust device 4, the hot air exhaust fan 411 and the standby hot air exhaust fan 412 caused by mechanical collision and the like, thereby prolonging the service life of the air exhaust device 4, the hot air exhaust fan 411 and the standby hot air exhaust fan 412.
Referring to fig. 1, the valve mechanism 5 includes an outer air discharge valve 51 provided on the outer air discharge pipe 43 and a recovery air valve 52 provided on the heat recovery pipe 42. The outer air exhaust valve 51 is used for controlling the on-off of the outer air exhaust pipe 43, and the recovery air valve 52 is used for controlling the on-off of the heat recovery pipe 42. Specifically, when heat recovery is not needed, the outer exhaust air valve 51 is opened, the recovery air valve 52 is closed, and the exhaust air flow of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 is exhausted to the atmosphere through the heat exhaust pipe 41 and the outer exhaust pipe 43 in sequence; when heat is required to be recovered, the outer exhaust air valve 51 is closed, the recovery air valve 52 is opened, and the exhaust air flow of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition device 2 is exhausted to the cooling tower 3 through the heat exhaust pipe 41 and the heat recovery pipe 42 in sequence.
Temperature measuring devices are arranged on the exhaust device 4 and the cooling tower 3. The temperature measuring device can be a thermometer, and the thermometer can be arranged on the exhaust pipe, the heat recovery pipe 42 or the external exhaust pipe 43 and can be arranged on the water inlet and outlet pipeline of the cooling tower 3. The temperatures of the exhaust device 4 and the cooling tower 3 can be measured by the temperature measuring device, so that the heat conversion efficiency can be counted and calculated conveniently.
Referring to fig. 1, in the present embodiment, a cooling tower 3 is used to connect to a heat pump unit 6 and perform heat exchange. Specifically, the cooling tower 3 may be connected to the heat pump unit 6 through a cooling water circulation line 31. Furthermore, in order to ensure the heat exchange efficiency, a cooling water circulation pump 32 is disposed at the junction between the cooling tower 3 and the heat pump unit 6, for example, the cooling water circulation pump 32 is disposed on the cooling water circulation pipeline 31.
The heat pump unit 6 is used for being connected with the air conditioning unit 7 and exchanging heat. Specifically, the heat pump unit 6 is connected to the air conditioning unit 7 through a system water circulation line 61. Similarly, a system water circulation pump 62 is disposed at the connection between the heat pump unit 6 and the air conditioning unit 7, for example, the system water circulation pump 62 is disposed on the system water circulation pipe 61.
The air conditioning box 7 is used for heating indoor. Specifically, the air conditioning box 7 is communicated with the indoor space through an air duct, such as a workshop for preparing battery cells.
By the heat exchange mode, the heat recovered by the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 can be used for heating a workshop in winter; and compared with a mode of directly leading the exhaust gas flow of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 to the chamber and directly utilizing the heat thereof, the mode of indirectly utilizing the heat is more environment-friendly.
The implementation principle of the heat recovery system of the diffusion furnace and the plasma enhanced chemical vapor deposition equipment in the embodiment of the application is as follows: in summer, the outer air exhaust valve 51 is opened, the recovery air exhaust valve 52 is closed, the exhaust air flow of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 is exhausted to the atmosphere sequentially through the heat air exhaust pipe 41 and the outer air exhaust pipe 43, and at the moment, the heat generated in the process of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 is not recovered and utilized. In winter, the outer exhaust air valve 51 is closed, the recovery air valve 52 is opened, the exhaust air flow of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 is exhausted to the cooling tower 3 sequentially through the heat exhaust pipe 41 and the heat recovery pipe 42, the cooling tower 3 utilizes the heat generated in the process of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 to heat up and exchange heat, and the filler of the cooling tower 3 is not easy to freeze due to the excessively low ambient temperature. And the cooling tower 3 is connected with the heat pump unit 6 and performs heat exchange, the heat pump unit 6 is connected with the air conditioning box 7 and performs heat exchange, and the air conditioning box 7 uses the heat for heating of a workshop, so that the further utilization of the heat generated in the process of the diffusion furnace 1 and the plasma enhanced chemical vapor deposition equipment 2 is realized.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (10)
1. A heat recovery system of a diffusion furnace and a plasma enhanced chemical vapor deposition device is characterized in that: the plasma enhanced chemical vapor deposition device comprises a diffusion furnace (1), a plasma enhanced chemical vapor deposition device (2) and a cooling tower (3), wherein an exhaust device (4) is arranged between the diffusion furnace (1) and the plasma enhanced chemical vapor deposition device (2) and between the cooling tower (3), the diffusion furnace (1) and the plasma enhanced chemical vapor deposition device (2) are communicated with the cooling tower (3) or the atmosphere through the exhaust device (4), and a valve mechanism (5) used for switching an exhaust path of the exhaust device (4) is arranged on the exhaust device (4).
2. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 1, wherein: the exhaust device (4) comprises a heat exhaust pipe (41), a heat recovery pipe (42) and an outer exhaust pipe (43), the heat exhaust pipe (41), the heat recovery pipe (42) and the outer exhaust pipe (43) are fixedly connected and form a three-way pipeline structure, the heat exhaust pipe (41) is communicated with the diffusion furnace (1) and the plasma enhanced chemical vapor deposition equipment (2) in a homogeneous phase mode, the heat recovery pipe (42) is communicated with the cooling tower (3), and the outer exhaust pipe (43) is communicated with the atmosphere.
3. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 2, wherein: and a heat exhaust fan (411) is arranged on the heat exhaust pipe (41).
4. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 3, wherein: and a standby heat exhaust fan (412) is also arranged on the heat exhaust pipe (41).
5. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 4, wherein: and heat insulation layers and/or protective layers are/is arranged outside the exhaust device (4), the hot air exhaust fan (411) and the standby hot air exhaust fan (412).
6. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 2, wherein: the valve mechanism (5) comprises an outer air exhaust valve (51) arranged on the outer air exhaust pipe (43) and a recovery air valve (52) arranged on the heat recovery pipe (42).
7. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 1, wherein: temperature measuring devices are arranged on the exhaust device (4) and the cooling tower (3).
8. The heat recovery system for a diffusion furnace and a plasma enhanced chemical vapor deposition apparatus as claimed in any one of claims 1 to 7, wherein: the cooling tower (3) is used for being connected with heat pump set (6) and carrying out heat exchange, heat pump set (6) are used for being connected with air conditioning box (7) and carrying out heat exchange, air conditioning box (7) are used for indoor heating.
9. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 8, wherein: and a cooling water circulating pump (32) is arranged at the joint of the cooling tower (3) and the heat pump unit (6).
10. The heat recovery system for diffusion furnaces and pecvd apparatuses as recited in claim 8, wherein: and a system water circulating pump (62) is arranged at the joint of the heat pump unit (6) and the air conditioning unit (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122693085.4U CN216558337U (en) | 2021-11-05 | 2021-11-05 | Heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122693085.4U CN216558337U (en) | 2021-11-05 | 2021-11-05 | Heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216558337U true CN216558337U (en) | 2022-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122693085.4U Active CN216558337U (en) | 2021-11-05 | 2021-11-05 | Heat recovery system of diffusion furnace and plasma enhanced chemical vapor deposition equipment |
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| Country | Link |
|---|---|
| CN (1) | CN216558337U (en) |
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2021
- 2021-11-05 CN CN202122693085.4U patent/CN216558337U/en active Active
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