CN216450673U - Semiconductor light source - Google Patents

Abstract

The utility model discloses a semiconductor light source, which comprises a substrate; a light emitting chip disposed on the substrate; a light-transmitting medium layer and an optical lens; the light-transmitting medium layer comprises a first surface, a second surface and a side surface, wherein the first surface is attached to the light-emitting surface of the light-emitting chip, the second surface is deviated from one side of the light-emitting chip and is attached to the incident surface of the optical lens, and the side surface extends from the edge of the second surface to the edge of the first surface; unfilled cavity spaces are reserved between the optical lens and the substrate and on the side face of the light-emitting chip; the side surface of the light-transmitting medium layer and/or a part of the surface of the optical lens may reflect light incident through the light-transmitting medium layer. The light-transmitting medium layer is used for increasing the light energy output efficiency of the light-emitting surface of the light-emitting chip; and partial light can be reflected when entering the side surface of the light-transmitting medium layer, so that the partial light is prevented from being emitted from the edge of the optical lens, and the utilization rate of the light output by the light-emitting chip is improved.

Description

Semiconductor light source

Technical Field

The utility model relates to the technical field of semiconductor light sources, in particular to a semiconductor light source.

Background

Semiconductor light sources are widely used in various lighting devices, especially in various electronic devices, because of their advantages, such as small size, low power consumption, long life, and high brightness. Common semiconductor light sources include LED light sources, laser light sources, and the like.

With the wide application of semiconductor light sources, people have higher and higher requirements on the quality of the light sources. For example, in electronic terminal applications, semiconductor light sources are mostly required to output a uniform spot of light in a circular or rectangular shape, while in automotive headlight applications, LED devices are required to ensure far-field illumination brightness.

Regardless of the kind of device in which the semiconductor light source is applied, it is one of the directions of major research in the industry to improve the utilization rate of light energy of the semiconductor light source as much as possible.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a semiconductor light source, which improves the light energy utilization rate of the semiconductor light source.

In order to solve the above technical problem, the present invention provides a semiconductor light source, including a substrate; a light emitting chip disposed on the substrate; a light-transmitting medium layer and an optical lens;

the light-transmitting medium layer comprises a first surface, a second surface and a side surface, wherein the first surface is attached to the light-emitting surface of the light-emitting chip, the second surface is deviated from one side of the light-emitting chip and is attached to the incident surface of the optical lens, and the side surface extends from the edge of the second surface to the edge of the first surface;

unfilled cavity spaces are reserved between the optical lens and the substrate and outside the light-emitting chip; the cavity space is provided with a reflecting surface formed by the surface of the optical lens and/or the side surface of the light-transmitting medium layer, and the cross section of the reflecting surface is gradually increased along the direction far away from the light-emitting chip; the reflecting surface is used for reflecting the light which is output from the surface of the light-emitting chip and enters the reflecting surface through the light-transmitting medium layer.

In an optional embodiment of the present application, the light-transmitting medium layer is a light-transmitting adhesive layer;

or the light-transmitting medium layer is a light-transmitting layer of a structure integrally formed with the optical lens.

In an optional embodiment of the present application, the side surface of the light-transmitting medium layer is a tapered surface extending from the edge of the first surface to the edge of the second surface and having a gradually increasing cross-sectional size.

In an optional embodiment of the present application, the first surface of the light-transmitting medium layer covers a light emitting surface of the light emitting chip or covers the light emitting surface and a side surface of the light emitting chip.

In an optional embodiment of the present application, the light-transmitting medium layer is a light-transmitting adhesive layer provided with one or more particles of diffusion powder, fluorescent powder, anti-precipitation powder, or toner particles.

In an optional embodiment of the present application, the light-transmitting medium layer is a silicone resin layer or an epoxy resin layer having a refractive index greater than 1.4;

the optical lens is any one of a silicon resin lens, an epoxy resin lens and a molded glass lens.

In an optional embodiment of the present application, at least one of the incident surface and the exit surface of the optical lens is a curved interface.

In an optional embodiment of the present application, the method further includes:

and the side surface of the cavity space, which is attached to the light-transmitting medium layer, is provided with reflective glue or light-transmitting glue with the refractive index smaller than that of the light-transmitting medium layer.

The utility model provides a semiconductor light source, which comprises a substrate; a light emitting chip disposed on the substrate; a light-transmitting medium layer and an optical lens; the light-transmitting medium layer comprises a first surface, a second surface and a side surface, wherein the first surface is attached to the light-emitting surface of the light-emitting chip, the second surface is deviated from one side of the light-emitting chip and is attached to the incident surface of the optical lens, and the side surface extends from the edge of the second surface to the edge of the first surface; unfilled cavity spaces are reserved between the optical lens and the substrate and outside the light-emitting chip; the cavity space is provided with a reflecting surface formed by the surface of the optical lens and/or the side surface of the light-transmitting medium layer, and the cross section of the reflecting surface is gradually increased along the direction far away from the light-emitting chip; the reflecting surface is used for reflecting the light which is output from the surface of the light-emitting chip and enters the reflecting surface through the light-transmitting medium layer.

The semiconductor light source in this application sets up the printing opacity dielectric layer on the light emitting surface of luminescence chip, because of the refracting index of this printing opacity dielectric layer is greater than the air refracting index, for the light of luminescence chip directly sends this light sparse medium of air by this optical dense medium of light emitting surface, the proportion of the light that takes place the total reflection in light transmission dielectric layer is incidenting by the light emitting surface is littleer to luminous energy derivation efficiency in the light emitting surface of luminescence chip has been increased. In addition, unfilled cavity spaces are left between the optical lens and the substrate and outside the light-emitting chip; obviously, the cavity space corresponds to an air medium; and the partial surface of the optical lens or the side surface of the light-transmitting medium layer enclosing the cavity space is the interface between the air medium and the optical lens or the light-transmitting medium layer, obviously, when the cross section of the interface is gradually increased along the direction far away from the light-emitting chip, the incident angle of the light emitted by the light-emitting chip and incident on the interface is relatively large, and total reflection is easy to occur, so that the partial light originally diffused to the periphery by large angles is deflected to the central direction of the optical lens and is reused. Therefore, the semiconductor light source structure in the application is beneficial to improving the light utilization rate and improving the brightness of the light output by the semiconductor light source.

Drawings

In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.

FIG. 1 is a schematic cross-sectional view of an LED light source with a hollow lens;

FIG. 2 is a schematic cross-sectional view of an LED light source with a primary lens;

fig. 3 is a schematic cross-sectional view of a semiconductor light source according to an embodiment of the present disclosure;

fig. 4 to 7 are schematic cross-sectional views of four different semiconductor light sources provided in this embodiment.

Detailed Description

Referring to fig. 1 and 2, fig. 1 is a schematic cross-sectional view of an LED light source with a hollow lens; fig. 2 is a schematic cross-sectional view of an LED light source with a primary lens. In the light path structure of the LED light source in fig. 1 or fig. 2, although the light emitting chip 2 of the LED belongs to a surface light source, it is obvious that the light output from the light emitting surface of the LED is not parallel light output completely perpendicular to the light emitting surface, but there is a portion of light output by diverging towards the edge of the light emitting surface, as shown in the transmission direction of the portion of light shown by the straight line to the arrow in fig. 1 and fig. 2, the portion of light is output by diverging from the edge of the lens structure through the lens structure shown in fig. 1 and fig. 2, and the divergence angle is generally relatively large, and the portion of light is often difficult to perform the illumination function, and thus the light energy loss is caused.

Therefore, the present application provides a technical solution capable of increasing the light energy utilization rate of the light emitting chip 2 to a certain extent.

In order that those skilled in the art will better understand the disclosure, the utility model will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the utility model, and not restrictive of the full scope of the utility model. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.

As shown in fig. 3 to 7, fig. 3 is a schematic cross-sectional structure diagram of the semiconductor light source provided in the embodiment of the present application, and fig. 4 to 7 are schematic cross-sectional structures of four different types of the semiconductor light source provided in the embodiment of the present application. The semiconductor light source may include:

a substrate 1; a light emitting chip 2 disposed on the substrate 1.

The light emitting chip 2 may be an LED chip or a laser light emitting chip or the like.

A light-transmitting medium layer 3 and an optical lens 4;

the light-transmitting medium layer 3 comprises a first surface which is attached and connected with the light-emitting surface of the light-emitting chip 2, a second surface which is deviated from one side of the light-emitting chip 2 and is attached with the incident surface of the optical lens 4, and a side surface 31 which extends from the edge of the second surface to the edge of the first surface;

referring to fig. 3, light output from the light emitting surface of the light emitting chip 2 enters the light transmitting medium layer 3 through the first surface of the light transmitting medium layer 3, enters the optical lens 4 through the second surface of the light transmitting medium layer 3, and is finally transmitted and emitted through the optical lens 4.

Obviously, for the light emitting surface of the light emitting chip 2 directly outputting light to the air medium, the light emitting surface of the light emitting chip 2 belongs to an optically dense medium for the air medium, and is easy to be totally reflected, the refractive index of the light transmitting medium layer 3 attached to the surface of the light emitting chip 2 is obviously greater than that of the air medium, and for the light outputting to the air medium, the proportion of the light emitted by the light emitting chip 2 and totally reflected by the light outputting to the light transmitting medium layer 3 is obviously smaller, so that the proportion of the light led out from the light emitting surface of the light emitting chip 2 is reduced, and the efficiency of the light outputting by the light emitting chip 2 is enhanced.

Unfilled cavity spaces are reserved between the optical lens 4 and the substrate 1 and outside the light-emitting chip 2; the cavity space has a reflecting surface formed by the surface of the optical lens 4 and/or the side surface 31 of the light-transmitting medium layer 3, the cross section of the reflecting surface gradually increasing in a direction away from the light-emitting chip 2; the reflecting surface is used for reflecting the light rays which are output from the surface of the light-emitting chip 2 and enter the reflecting surface through the light-transmitting medium layer 3.

Considering that, for the light input into the light-transmitting medium layer 3 by the light-emitting chip 2, there is a portion of the light that is emitted outward at a large angle, because the portion of the light is too dispersed, it is finally difficult to achieve the illumination effect, and the portion of the light is unusable, so that there is a light energy loss in the portion of the light-emitting chip 2.

Therefore, unfilled cavity spaces are reserved between the optical lens 4 and the substrate 1 and outside the light-emitting chip 2 in the application, a circle of annular cavity can be formed around the light-emitting chip 2, a reflecting surface with a cross section gradually increasing along the direction far away from the light-emitting chip 2 is formed between the cavity spaces and the optical lens or the light-transmitting medium layer, and the reflecting surface can be approximately regarded as a bowl-shaped surface with a bowl mouth facing to one side of the optical lens 4.

The cavity space is equivalent to a space of an air medium to a certain extent, an interface between the cavity space and the optical lens 4 or the light-transmitting medium layer 3 is also equivalent to an interface between the air medium and the optical lens 4 to a certain extent, if light enters the interface from the optical lens 4 or the light-transmitting medium layer 3 and is transmitted to the cavity space, the light enters the optical cavity through the interface, and the light is easy to be totally reflected, so that the light is deflected. Based on the reflecting surface approximate to the bowl-shaped surface, the angle of the light with a larger divergence angle incident to the reflecting surface is generally relatively larger, and obviously, the light can be converged to the center of the optical lens within a certain divergence angle, so that the light with the larger divergence angle is utilized.

There are many different embodiments possible for the reflecting surface, and the following description will be given with specific embodiments. Referring to fig. 3 to 5, there are shown a plurality of different cases that exist for the reflective surface that reflects the light incident through the light-transmitting medium layer 3, respectively.

Alternatively, as shown in fig. 3, the reflecting surface is mainly formed by the side surface 31 of the light-transmitting medium layer 3.

Among the light rays input into the light-transmitting medium layer 3 by the light-emitting chip 2, a part of the light rays may be divergently output outward, that is, may be incident to the side surface 31 of the light-transmitting medium layer 3. Because the light-transmitting medium layer 3 belongs to an optically dense medium relative to the air medium in the cavity space, the light incident to the side surface 31 of the light-transmitting medium layer 3 is easily totally reflected to be deflected to the center direction of the optical lens 4 to a certain extent, and is finally output through the optical lens 4, and is output in a relatively large angle relative to the light directly emitted from the edge of the optical lens 4.

In order to increase the angle of the light incident from the light emitting surface of the light emitting chip 2 to the side surface 31 of the light transmitting medium layer 3 as much as possible, and to make the light totally reflected as much as possible, the side surface 31 of the light transmitting medium layer 3 may be a tapered surface extending from the edge of the first surface to the edge of the second surface and having a gradually increasing cross-sectional size.

In another alternative embodiment of the present application, the reflecting surface may also be formed by a part surface 41 of the optical lens 4. It will be appreciated that the portion of the surface 41 should be the surface of the optical lens 4 adjacent the substrate 1 and not in contact with the layer of light-transmitting medium 3.

When the partial surface 41 of the optical lens 4 enclosing the cavity space is a reflecting surface, the principle is the same as that of the side surface 31 of the light-transmitting medium layer 3, and the reflecting surface is used for reflecting the light which is incident to the partial surface 41 through the light-transmitting medium layer 3, and is also easy to be totally reflected, so that the light is deflected towards the center of the optical lens, and the partial light is utilized. .

In another alternative embodiment of the present application, as shown in fig. 5, the reflecting surface may also be a reflecting surface formed by a part of the side surface of the light-transmitting medium layer 3 and a part of the surface 41 of the optical lens 4.

Similar to the above principle, a part of the light output from the light emitting chip 2 with a large divergence angle is incident on the reflection surface formed by the side surface of the light transmitting medium layer 3 and the partial surface 41 of the optical lens 4, and is easy to be totally reflected, so that the light is deflected toward the center of the optical lens 4, and the light is utilized.

In summary, in the semiconductor light source in the present application, the light-transmitting medium layer is disposed between the optical lens and the light-emitting chip, and the proportion of total reflection of light output from the light-emitting surface is reduced, and the light energy output efficiency and the light-emitting brightness of the light-emitting chip are increased by using the principle that the refractive index of the light-transmitting medium layer is larger than that of air; on the basis, the side surface of the light-transmitting medium layer and part of the surface of the optical lens are used for reflecting light rays with large divergence angles, so that the part of light rays are deflected towards the center direction of the optical lens, the effective utilization of the part of light rays is realized, the light ray utilization rate of the light-emitting chip is improved, and the brightness of the semiconductor light source is further improved.

In an alternative embodiment of the present application, based on any of the above embodiments, the light-transmitting medium layer 3 includes a first surface attached to the optical lens 4, and a second surface attached to the light-emitting chip 2. The first surface of the light-transmitting medium layer 3 may be a surface having the same size and shape as the light-emitting surface of the light-emitting chip 2, as shown in fig. 3 and 5, a part of the bonding wire 5 of the light-emitting chip 2 is embedded inside the light-transmitting medium layer 3, and a part of the bonding wire is located in the cavity space.

As shown in fig. 4, 6 and 7, the first surface of the light-transmitting medium layer 3 may be a surface covering and wrapping the light-emitting surface and the side surface of the light-emitting chip 2, and in order to reduce the size of the device as much as possible, the light-transmitting medium layer 3 covering the side surface portion of the light-emitting chip 2 should be as thin as possible.

In addition, the first surface of the light-transmitting medium layer 3 may also be a surface slightly smaller than the light-emitting surface of the light-emitting chip 2, and the edge corners and other portions are exposed, which also can implement the technical solution of the present application.

In another optional embodiment of the present application, for the reflection surface used for performing reflection and deflection on the light with a large divergence angle in the above embodiments, total reflection may also be easily performed without completely utilizing the difference of refractive indexes to realize light reflection and deflection, and a reflective glue may also be directly disposed on the reflection surface, that is, a reflective glue, such as a high-reflection white glue or the like, is directly disposed on the side surface 31 of the light-transmitting medium layer 3 and/or a partial surface 41 of the optical lens 4, so that the light incident on the reflection surface at any angle can be totally reflected.

The space left unfilled by the side face of the light-emitting chip 2 between the optical lens 4 and the substrate 1 is not necessarily an air medium space.

In an alternative embodiment of the present application, a transparent glue or the like with a refractive index smaller than that of the transparent dielectric layer 3 may be filled in the cavity space. Of course, filling with a material substance that is not light-permeable is not excluded.

In addition, the transparent medium layer 3 may be a transparent adhesive layer formed by a transparent adhesive, or may be a transparent component made of the same material as the optical lens 4, or even the transparent medium layer 3 and the optical lens 4 may be integrally formed.

Alternatively, the light-transmitting medium layer 3 may be a silicone resin layer or an epoxy resin layer having a refractive index greater than 1.4.

And the optical lens 4 may be any one of a silicone lens, an epoxy lens, a molded glass lens, and the like.

And one or more particles of diffusion powder, fluorescent powder, anti-precipitation powder or toner particles can be doped and arranged in the light-transmitting medium layer 3. In practical applications, the corresponding particles may be doped based on the practical application requirements of the semiconductor light source.

The optical lens 4 shown in fig. 3 to 7 has a convex lens structure with a thick center and thin edges. In practice, the optical lens 4 in this embodiment is mainly used to modulate the light spot output by the semiconductor light source. The shape and structure of the optical lens 4 can be set according to actual needs. For example, the second surfaces of the optical lens 4 and the light-transmitting medium layer 3 are thick toward the middle of the attached region, and the implementation of the present application is not affected.

In an alternative embodiment of the present application, the surface of the optical lens 4 on the side connected to the translucent medium layer 3 is an inner concave surface, and a cavity for accommodating the light emitting chip 2 and the translucent medium layer 3 is formed between the inner concave surface and the substrate 1, as shown in fig. 3, 5, 6, and 7.

It is understood that in practical applications, the present application does not exclude an embodiment in which the optical lens 4 is only fixedly connected to the light emitting chip 2 through the transparent medium layer 3, that is, the cavity space is a space communicating with the external environment, as shown in fig. 4.

For the space with the cavity space being a closed structure, the edge of the optical lens 4 extends to the substrate 1, and is fixedly connected with the substrate 1, so as to ensure the tightness of the light source assembly.

Further, the surface of the region where the optical lens 4 and the light-transmitting medium layer 3 are attached to each other may be an inner concave surface, as shown in fig. 6; FIG. 7 is a plan view; or an outer convex surface, to which no particular limitation is imposed in this application.

The surface area of the optical lens 4 facing away from the transparent medium layer 3 and facing the transparent medium layer 3 may be an inner concave surface, an outer convex surface or a plane surface. It is understood that at least one of the two surfaces of the portion of the optical lens 4 facing the light-transmitting medium layer 3 should be a curved surface, and may be a free-form surface.

Furthermore, it is not necessary for the edge of the optical lens 4 to extend to the surface of the substrate 1, and a connecting member 6 having a bowl-shaped structure may be provided on the surfaces of the optical lens 4 and the substrate 1, and the optical lens 4 can be fixedly connected to the substrate 1 through the connecting member 6.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include elements inherent in the list. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element. In addition, parts of the technical solutions provided in the embodiments of the present application that are consistent with implementation principles of corresponding technical solutions in the prior art are not described in detail, so as to avoid redundant description.

The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (7)

1. A semiconductor light source includes a substrate; a light emitting chip disposed on the substrate; a light-transmitting medium layer and an optical lens;

the light-transmitting medium layer comprises a first surface, a second surface and a side surface, wherein the first surface is attached to the light-emitting surface of the light-emitting chip, the second surface is deviated from one side of the light-emitting chip and is attached to the incident surface of the optical lens, and the side surface extends from the edge of the second surface to the edge of the first surface;

unfilled cavity spaces are reserved between the optical lens and the substrate and outside the light-emitting chip; the cavity space is provided with a reflecting surface formed by the surface of the optical lens and/or the side surface of the light-transmitting medium layer, and the cross section of the reflecting surface is gradually increased along the direction far away from the light-emitting chip; the reflecting surface is used for reflecting the light which is output from the surface of the light-emitting chip and enters the reflecting surface through the light-transmitting medium layer.

2. The semiconductor light source of claim 1, wherein the light-transmissive dielectric layer is a light-transmissive glue layer;

or the light-transmitting medium layer is a light-transmitting layer of a structure integrally formed with the optical lens.

3. The semiconductor light source according to claim 1, wherein the side surface of the light-transmitting medium layer is a tapered surface extending from an edge of the first surface to an edge of the second surface and having a gradually increasing cross-sectional size.

4. The semiconductor light source according to claim 1, wherein the first surface of the light-transmitting medium layer covers a light emitting surface of the light emitting chip or covers the light emitting surface and a side surface of the light emitting chip.

5. The semiconductor light source according to claim 1, wherein the light-transmitting medium layer is a silicone resin layer or an epoxy resin layer having a refractive index of greater than 1.4;

the optical lens is any one of a silicon resin lens, an epoxy resin lens and a molded glass lens.

6. The semiconductor light source of claim 1, wherein at least one of the entrance face and the exit face of the optical lens is a curved interface.

7. The semiconductor light source of claim 1, further comprising:

and reflective glue or transparent glue with the refractive index smaller than that of the transparent dielectric layer is arranged in the cavity space and attached to the reflecting surface.

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