CN216389409U

CN216389409U - Light emitting diode epitaxial structure suitable for working under heavy current condition

Info

Publication number: CN216389409U
Application number: CN202122978356.0U
Authority: CN
Inventors: 闫其昂; 王国斌
Original assignee: Jiangsu Third Generation Semiconductor Research Institute Co Ltd
Current assignee: Jiangsu Third Generation Semiconductor Research Institute Co Ltd
Priority date: 2021-11-30
Filing date: 2021-11-30
Publication date: 2022-04-26
Anticipated expiration: 2031-11-30

Abstract

The utility model discloses a light-emitting diode epitaxial structure suitable for working under a high-current condition. The light emitting diode epitaxial structure comprises an n-type GaN layer, an InGaN/GaN multi-quantum well light emitting layer, a p-type AlGaN electronic barrier layer, an AlInN insertion layer, a p-type GaN transition layer and a p-type GaN layer which are sequentially arranged along a specified direction. The light emitting diode epitaxial structure provided by the utility model has stable photoelectric performance when working under a high-current condition, can improve the problem of efficiency dip, and has the advantages of small electric leakage, good antistatic performance and simple preparation process.

Description

Light emitting diode epitaxial structure suitable for working under heavy current condition

Technical Field

The utility model belongs to the technical field of semiconductors, and particularly relates to a light emitting diode epitaxial structure suitable for working under a high-current condition.

Background

The GaN-based Light Emitting Diode (LED) is a semiconductor light emitting device, has the advantages of long service life, low energy consumption, small volume, high reliability and the like, and plays an increasingly important role in the fields of large-screen color display, traffic signal lamps and illumination.

Currently, a GaN-based LED generally grows an epitaxial layer on a sapphire substrate, and sequentially includes a low-temperature GaN buffer layer, a high-temperature undoped GaN layer, an n-type doped GaN layer, a Multiple Quantum Well (MQW) light-emitting layer, a p-type AlGaN electron blocking layer, and a p-type layer. The GaN-based LED epitaxial structure has certain defects, on one hand, because the mobility of electrons is faster than that of holes, and the concentration of free electrons is higher than that of the holes, the electrons and the holes in an MQW light-emitting layer are easily distributed unevenly, the holes are concentrated in the MQW light-emitting layer close to a p-type layer, and the holes are gradually attenuated towards an n-type layer to be not beneficial to the recombination of the electrons and the holes; on the other hand, due to the high concentration and fast migration of electrons, electrons easily overflow into the p-type layer, and non-radiative recombination occurs between the electrons and ionized holes in the p-type layer, so that the injection efficiency of the holes is reduced, and the efficiency is suddenly reduced, especially under the condition of high-current operation.

For the above problems, at present, the effect of electron blocking between the active region and the hole supply layer is generally enhanced by increasing the Al composition of the p-type AlGaN electron blocking layer, and the high Al composition can limit partial electrons from overflowing to the p-type layer, but with the increase of the Al composition, the ionization energy of Mg in AlGaN will rapidly increase and the crystal quality will significantly decrease, resulting in the sharp decrease of the hole ionization efficiency and concentration, and further causing the decrease of brightness and efficiency. Meanwhile, internal polarization fields at the interface between the last quantum barrier of the MQW light-emitting layer and the AlGaN electron blocking layer and the interface between the electron blocking layer and the p-type layer cause the electron blocking layer with high aluminum composition to generate serious energy band bending, so that a peak is presented at the interface to prevent holes from being effectively injected into an active region. In addition, under the condition of large-current injection, even if an AlGaN electron blocking structure with high Al component is adopted, the problems that a large amount of electrons overflow to a P-type layer to cause efficiency dip effect, aging, light decay and the like cannot be avoided, and meanwhile, along with the rising of the Al component, the quality of the P-type AlGaN electron blocking layer crystal is reduced, dislocation is amplified in the P-type layer to form a leakage channel, so that the leakage of electricity of the LED is increased, the antistatic capacity of the LED is poor, and the service life of the LED is shortened. Some techniques improve the epitaxial current spreading and the crystal quality of a p-type layer, improve the brightness and antistatic performance, etc. by arranging an undoped GaN layer (uGaN) with a partial thickness (for example, one third thickness) on the p-type GaN layer close to a p-type AlGaN electron blocking layer, and then growing the p-type GaN layer, but the effect is not good.

SUMMERY OF THE UTILITY MODEL

The utility model mainly aims to provide an epitaxial structure of a light-emitting diode, which is suitable for working under a high-current condition, so as to overcome the defects of the prior art.

In order to achieve the purpose of the utility model, the technical scheme adopted by the utility model comprises the following steps:

the embodiment of the utility model provides an epitaxial structure of a light emitting diode, which comprises an n-type GaN layer, an InGaN/GaN multi-quantum well light emitting layer, a p-type AlGaN electronic barrier layer, an AlInN insertion layer, a p-type GaN transition layer and a p-type GaN layer which are sequentially arranged along a specified direction.

Further, the AlInN insertion layer includes a first AlInN layer and a second AlInN layer, the second AlInN layer is disposed between the first AlInN layer and the p-type GaN transition layer, and a growth temperature of the second AlInN layer is higher than a growth temperature of the first AlInN layer.

Furthermore, a plurality of defects on the surface of the first AlInN layer are etched to form a plurality of concave parts, and the concave parts are filled with local areas of the second AlInN layer.

Further, the In component content of the first AlInN layer and the second AlInN layer is 10-20%.

Furthermore, the thickness of the first AlInN layer and the second AlInN layer is 10-100 nm, and the doping concentration is 1 multiplied by 10¹⁸cm^-3～5×10²⁰cm^-3。

In some embodiments, the AlInN insertion layer may be undoped or p-doped, and may be undoped along a portion of the thickness direction thereof and p-doped along another portion thereofHetero, wherein the doping concentration is 1X 10¹⁸cm^-3～5×10²⁰cm^-3。

Furthermore, the thickness of the p-type GaN transition layer is 10-100 nm, and the doping concentration is 1 multiplied by 10¹⁸cm^-3～5×10²⁰cm^-3。

Furthermore, the multiple quantum well light-emitting layer comprises at least one InGaN quantum well layer and at least one GaN quantum barrier layer which are alternately stacked, the thickness of the InGaN quantum well layer is 2-6 nm, and the thickness of the GaN quantum barrier layer is 6-20 nm.

Furthermore, at least one InGaN quantum well layer and at least one GaN quantum barrier layer are alternately laminated for 1-20 periods.

Furthermore, the thickness of the n-type GaN layer is 2-4 mu m, and the doping concentration is 2 multiplied by 10¹⁸cm^-3～5×10¹⁹cm^-3The thickness of the p-type A1GaN electron blocking layer is 15-150 nm, and the doping concentration is 1 multiplied by 10¹⁸cm^-3～5×10²⁰cm^-3The thickness of the p-type GaN transition layer is 10-100 nm, and the doping concentration is 1 multiplied by 10¹⁸cm^-3～5×10²⁰cm^-3The thickness of the p-type GaN layer is 10-100 nm, and the doping concentration is 1 multiplied by 10¹⁸cm^-3～5×10²⁰cm^-3。

In some more specific embodiments, the light emitting diode epitaxial structure includes a low-temperature GaN buffer layer, an undoped high-temperature GaN layer, an n-type GaN layer, an InGaN/GaN multiple quantum well light emitting layer, a p-type AlGaN electron blocking layer, an AlInN insertion layer, a p-type GaN transition layer, and a p-type GaN layer, which are sequentially grown on a substrate.

Wherein the substrate includes any one of a sapphire substrate, a silicon carbide substrate, a silicon substrate, a zinc oxide substrate, or a gallium nitride substrate, but is not limited thereto.

The thickness of the low-temperature GaN buffer layer is 20-60 nm, and the thickness of the non-doped high-temperature GaN layer is 2-4 microns.

Compared with the prior art, the utility model has the beneficial effects that:

1) the provided light emitting diode epitaxial structure has stable photoelectric performance when working under a high-current condition, and can solve the problem of efficiency dip.

2) The provided light emitting diode epitaxial structure has high crystal quality, can provide better current expansion, improves brightness, and improves electric leakage and antistatic performance.

3) The light emitting diode epitaxial structure is simple in preparation process.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a schematic view of an epitaxial structure of a light emitting diode suitable for operating under a high current condition according to an exemplary embodiment of the present invention;

FIG. 2 is a schematic view of an epitaxial structure of a light emitting diode according to the present invention provided in comparative example 1;

fig. 3 is a schematic view of an epitaxial structure of a light emitting diode according to the present invention provided in comparative example 2;

FIG. 4 is a schematic view of an epitaxial structure of a light emitting diode according to the present invention provided in comparative example 3;

fig. 5 is a schematic view of an epitaxial structure of a light emitting diode provided in comparative example 4 of the present invention.

Detailed Description

In view of the defects of the prior art, the inventor of the present invention has made long-term research and extensive practice to provide a technical scheme of the present invention, and mainly aims at the problem that in the existing light emitting diode epitaxial structure, under the working condition of large current, electrons easily overflow into a p-type layer and are recombined with ionized holes in the p-type layer, so that the injection efficiency of the holes is reduced, and the efficiency is suddenly reduced, so as to provide a light emitting diode epitaxial structure suitable for working under the large current condition, which not only has stable photoelectric performance under the large current, but also has the advantages of improving the leakage and antistatic performance.

Specifically, in the light emitting diode epitaxial structure provided in the embodiment of the present invention, the AlInN insertion layer is disposed between the electron blocking layer and the p-type layer of the conventional epitaxial structure, and the AlInN insertion layer is specifically formed in the following process: firstly growing a first AlInN layer on an electron blocking layer at a low temperature, corroding the defect (dislocation) of the first AlInN layer in a hydrogen atmosphere to form a concave part, then growing a second AlInN layer on the first AlInN layer at a high temperature, and filling the formed concave part at least through the second AlInN layer, so that on one hand, the dislocation extension of the electron blocking layer and the AlInN insertion layer (particularly the first AlInN layer) can be interrupted, the quality of a subsequently grown p-type layer crystal is improved, better current expansion is further provided, the brightness of a light-emitting diode is improved, and the electric leakage and antistatic performance are improved; meanwhile, the concave part formed on the surface of the first AlInN layer can reduce total reflection of light emitted to the p-type layer by the quantum well light-emitting layer, and quantum efficiency is improved; on the other hand, the AlInN insertion layer and the AlGaN electron blocking layer have the same structure and band gap, so that the situation that electrons overflow into the p-type layer to generate non-radiative recombination can be further enhanced and prevented, and the efficiency dip effect is improved; meanwhile, the AlInN insertion layer is in lattice matching with the pGaN layer, so that energy band bending caused by the high-aluminum component AlGaN electron blocking layer and peaks presented at an interface can be improved, and the hole injection capability is improved.

And because the AlInN insertion layer can further prevent electrons from overflowing, the Al component of the p-type AlGaN electron blocking layer can be reduced according to actual needs, the p-type AlGaN electron blocking layer and the p-type GaN layer with higher epitaxial quality can be obtained, the process growth difficulty is improved, and the epitaxial wafer structure with excellent performance is obtained.

In addition, the growth temperature of the AlInN insertion layer is lower than that of the p-type GaN layer, so that the high-temperature growth time after the multiple quantum well light-emitting layer is shortened, the damage of the high-temperature growth on the quality of the quantum well of the light-emitting layer is reduced, and the photoelectric performance under large current is stable.

The embodiments, implementations, principles, and so on of the present invention will be further explained with reference to the drawings and specific embodiments, and unless otherwise specified, the materials used and the processing techniques and equipment used in the embodiments of the present invention are well known to those skilled in the art.

Example 1:

referring to fig. 1, an led epitaxial structure suitable for operating under a large current condition includes a low temperature GaN buffer layer 12, an undoped high temperature GaN layer 13, an n-type GaN layer 14, a multiple quantum well light-emitting layer 15, a p-type AlGaN electron blocking layer 16, an AlInN insertion layer 17, a p-type GaN transition layer 18, and a p-type GaN layer 19 sequentially grown on a sapphire substrate 11.

The AlInN insertion layer 17 includes a first AlInN layer 171 and a second AlInN layer 172, the second AlInN layer 172 is disposed between the first AlInN layer 171 and the p-type GaN transition layer 18, and a growth temperature of the second AlInN layer 172 is higher than a growth temperature of the first AlInN layer 171.

Further, a plurality of recesses are formed by etching a plurality of defects on the surface of the first AlInN layer 171, and the recesses are filled with local regions of the second AlInN layer 172.

In some more specific embodiments, a method for preparing the light emitting diode epitaxial structure suitable for operating under a high current condition may include:

1) growing a low-temperature GaN buffer layer 12 with a thickness of 20nm on a sapphire substrate 11 at a temperature of 540 ℃ and a pressure of 300torr, wherein the Ga source required for growth is a TMG source, and the growth atmosphere is H₂An atmosphere;

2) growing a 3 μm thick undoped high temperature GaN layer 13 on the low temperature GaN buffer layer 12 at 1080 ℃ and 200torr pressure, wherein the Ga source required for growth is TMG source, and the growth atmosphere is H₂An atmosphere;

3) an n-type GaN layer 14 of 3 μm thickness, in which the doping concentration of Si is 8X 10, is grown on the undoped high-temperature GaN layer 13 at a temperature of 1060 ℃ and a pressure of 200torr¹⁸cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

4) growing a multi-quantum well light-emitting layer 15 on the N-type GaN layer 14 under the pressure of 250torr, wherein the multi-quantum well light-emitting layer 15 comprises an InGaN quantum well layer 151 and a GaN quantum barrier layer 152 which are repeatedly and alternately grown for 9 periods, the thickness of the InGaN quantum well layer is 3nm, the growth temperature is 750 ℃, and the growth atmosphere is N₂The thickness of the GaN quantum barrier layer is 12nm, the growth temperature is 810 ℃, and the growth atmosphere is H₂；

5) Growing a p-type AlGaN electron blocking layer 16 with the thickness of 25nm on the multiple quantum well light-emitting layer 15 at the temperature of 850 ℃ and the pressure of 150torr, wherein the Ga source required by the growth is a TMG source, the Al source is a TMAl source, and the growth atmosphere is N₂An atmosphere;

6) growing a first AlInN layer 171 with the thickness of 20nm on the p-type AlGaN electron blocking layer 16 at the temperature of 750 ℃ and the pressure of 60torr, wherein an Al source required by growth is a TMAl source, an In source required by growth is a TMIn source, and the growth atmosphere is N₂An atmosphere;

7) the TMAl source is turned off and TMIn source is continuously introduced into the reactor at NH₃And N₂Annealing in the atmosphere for 30s, and then annealing in H₂Etching the first AlInN layer 171 for about 60s in the atmosphere, and etching a plurality of defects on the surface of the first AlInN layer 171 to form a plurality of concave parts;

8) growing a second AlInN layer 172 with the thickness of 20nm on the first AlInN layer 171 at the temperature of 930 ℃ and the pressure of 150torr, and enabling a local area of the second AlInN layer 172 to fill a concave part on the surface of the first AlInN layer 171, wherein an Al source required for growth is a TMAl source, an In source required for growth is a TMIn source, and the growth atmosphere is N₂An atmosphere;

9) growing a 20nm thick p-type GaN transition layer 18 on the HTL 172 at 930 deg.C and 200torr pressure, with a doping concentration of 2 × 10¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

10) a p-type GaN layer 19 with a thickness of 20nm was grown on the p-type GaN transition layer 18 at a temperature of 950 ℃ and a pressure of 400torr, wherein the doping concentration was 5X 10¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂Atmosphere, finish as shown in the figure1, preparation of the epitaxial structure of the light-emitting diode.

Comparative example 1:

referring to fig. 2, an epitaxial structure of a light emitting diode in this comparative example is substantially similar to the epitaxial structure in example 1, except that an AlInN insertion layer 17 with a thickness of 40nm is grown on a p-type AlGaN electron blocking layer 16 in one step, the two high and low temperature growth methods in example 1 are not adopted, and the AlInN insertion layer 17 in this comparative example is not etched, specifically, the method for preparing the epitaxial structure of a light emitting diode in this comparative example includes:

1) growing a low-temperature GaN buffer layer 12 on a sapphire substrate 01 at 540 ℃ and 300torr pressure, wherein the Ga source required for growth is TMG source, and the growth atmosphere is H₂An atmosphere;

3) an n-type GaN layer 14 of 3 μm thickness, in which the doping concentration of Si is 8X 10, is grown on the undoped high-temperature GaN layer 13 at a temperature of 1060 ℃ and a pressure of 200torr¹⁸em^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

4) growing a multiple quantum well light-emitting layer 15 on the n-type GaN layer 14 at a temperature of 750 ℃ and a pressure of 250torr, wherein the multiple quantum well light-emitting layer 15 comprises an InGaN quantum well layer and a GaN quantum barrier layer which are repeatedly and alternately grown for 9 periods, the thickness of the InGaN quantum well layer is 3nm, and the thickness of the GaN quantum barrier layer is 12 nm;

5) growing a p-type A1GaN electron blocking layer 16 with the thickness of 25nm on the multiple quantum well light-emitting layer 15 at the temperature of 850 ℃ and the pressure of 200torr, wherein the Ga source required for growth is a TMG source, the Al source is a TMAl source, and the growth atmosphere is N₂An atmosphere;

6) growing a 40nm thick AlInN insertion layer 17 on the p-type A1GaN electron blocking layer 16 at 830 ℃ under 100torr, wherein the Al source required for growth is TMAl source, the In source required for growth is TMIn source, and the growth atmosphere is TMIn sourceIs N₂An atmosphere;

7) growing a 20nm thick p-type GaN transition layer 18 with a doping concentration of 2 × 10 on the AlInN insertion layer 17 at 930 deg.C and a pressure of 600torr¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

8) a p-type GaN layer 19 with a thickness of 20nm was grown on the p-type GaN transition layer 18 at a temperature of 950 ℃ and a pressure of 200torr, wherein the doping concentration was 5X 10¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂Atmosphere, completing the preparation of the epitaxial structure of the light emitting diode shown in fig. 2.

Comparative example 2:

referring to fig. 3, a light emitting diode epitaxial structure in this comparative example is substantially similar to the epitaxial structure in example 1, except that a p-type GaN transition layer 18 is directly grown on a p-type A1GaN electron blocking layer 16, and an AlInN insertion layer 17 is not grown between the two, specifically, the light emitting diode epitaxial structure in this comparative example is prepared by a method comprising:

4) growing a multi-quantum well light emitting layer 15 on the n-type GaN layer 14 under a pressure of 250torr, wherein the multi-quantum well light emitting layer 15 comprises InGaN quantum well layers 151 and GaN quantum barrier layers 152 repeatedly and alternately grown for 9 periods, the thickness of the InGaN quantum well layers is 3nm, the growth temperature is 750 DEG CGrowth atmosphere is N₂The thickness of the GaN quantum barrier layer is 12nm, the growth temperature is 810 ℃, and the growth atmosphere is H₂；

5) Growing a p-type A1GaN electron blocking layer 16 with the thickness of 25nm on the multiple quantum well light-emitting layer 15 at the temperature of 850 ℃ and the pressure of 150torr, wherein the Ga source required for growth is a TMG source, the Al source is a TMAl source, and the growth atmosphere is N₂An atmosphere;

6) growing a 20nm thick p-type GaN transition layer 18 with a doping concentration of 2 × 10 on the p-type A1GaN electron blocking layer 16 at 930 deg.C and a pressure of 200torr¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

7) a 60nm thick p-type GaN layer 19 was grown on the p-type GaN transition layer 18 at a temperature of 950 ℃ and a pressure of 400torr, with a doping concentration of 5X 10¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂Atmosphere, completing the preparation of the epitaxial structure of the light emitting diode as shown in fig. 3.

Comparative example 3:

referring to fig. 4, an epitaxial structure of a light emitting diode in this comparative example is substantially similar to the epitaxial structure in example 1, except that a p-type GaN transition layer 18 is directly grown on the p-type A1GaN electron blocking layer 16, an AlInN insertion layer 17 is not grown between the two, and the thickness of the p-type GaN transition layer 18 is changed from 20nm of example 1 to 60nm (corresponding to the total thickness of the first AlInN layer 171, the second AlInN layer 172 and the p-type GaN transition layer 18 in example 1), specifically, the preparation method of the epitaxial structure of a light emitting diode in this comparative example comprises:

3) at a temperature of 1060 DEG CAnd an n-type GaN layer 14 of 3 μm thickness, in which the doping concentration of Si is 8X 10, is grown on the undoped high-temperature GaN layer 13 at a pressure of 200torr¹⁸cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

6) growing a 60nm thick p-type GaN transition layer 18 with a doping concentration of 2 × 10 on the p-type A1GaN electron blocking layer 16 at 930 deg.C and a pressure of 200torr¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂An atmosphere;

7) a 60nm thick p-type GaN layer 19 was grown on the p-type GaN transition layer 18 at a temperature of 950 ℃ and a pressure of 400torr, with a doping concentration of 5X 10¹⁹cm^-3The Ga source required by the growth is TMG source, and the growth atmosphere is H₂Atmosphere, completing the preparation of the epitaxial structure of the light emitting diode as shown in fig. 4.

Comparative example 4:

referring to fig. 5, a light emitting diode epitaxial structure in this comparative example is substantially similar to the epitaxial structure in example 1, except that a p-type GaN transition layer 18 is directly grown on a p-type A1GaN electron blocking layer 16, an AlInN insertion layer 17 is not grown therebetween, the p-type GaN transition layer 18 is a conventional undoped GaN transition layer, and the thickness of the p-type GaN layer 19 is changed from 20nm in example 1 to 60nm (corresponding to the total thickness of the first AlInN layer 171, the second AlInN172 layer and the p-type GaN layer 19 in example 1), and specifically, the light emitting diode epitaxial structure in this comparative example is prepared by:

6) growing a 40nm thick undoped GaN transition layer 18 on the p-type A1GaN electron blocking layer 16 at 930 ℃ and 200torr pressure, wherein the Ga source required for growth is TMG source, and the growth atmosphere is H₂An atmosphere;

7) growing a p-type GaN layer 19 with a thickness of 80nm on the undoped GaN transition layer 18 at a temperature of 950 ℃ and a pressure of 400torr, wherein the doping concentration is 5X 10¹⁹cm^-3The Ga source required for growth is TMG source, and the growth atmosphere is H2 atmosphere, completing the preparation of the light emitting diode epitaxial structure shown in fig. 5.

Is divided intoThe epitaxial structure of example 1 was found to have a smooth surface morphology with low surface roughness, an AFM test surface roughness average of less than 0.5nm, and a surface defect density of 1.2X 10⁸cm^-2While the surfaces of the epitaxial structures in comparative examples 1, 2, 3 and 4 had different degrees of black spot and void defects, the continuity of the epitaxial layer surface was poor, and the defect dislocation density was 9.7 × 10⁸cm^-2、5.6×10⁸cm^-2、7.8×10⁸cm^-2And 6.7X 10⁸cm^-2As shown in Table 1, the light emitting diode having the epitaxial structure in example 1 had a higher light emission luminance under the same wavelength condition and the same area (1 mm) under the same current test condition (1000mA)²) The light emitting diode of (1) has lower voltage and lower efficiency drop (drop) effect.

TABLE 1

In addition, the utility model discloses a still refer to above-mentioned embodiment, tested with other raw materials, technology operation, process conditions mentioned in this specification to all obtained comparatively ideal result.

It should be understood that the technical solution of the present invention is not limited to the above-mentioned specific embodiments, and all technical modifications made according to the technical solution of the present invention fall within the protection scope of the present invention without departing from the spirit of the present invention and the protection scope of the claims.

Claims

1. An epitaxial structure of a light emitting diode is characterized by comprising an n-type GaN layer, an InGaN/GaN multi-quantum well light emitting layer, a p-type AlGaN electronic barrier layer, an AlInN insertion layer, a p-type GaN transition layer and a p-type GaN layer which are sequentially arranged along a specified direction.

2. The light emitting diode epitaxial structure of claim 1, wherein: the AlInN insertion layer comprises a first AlInN layer and a second AlInN layer, the second AlInN layer is arranged between the first AlInN layer and the p-type GaN transition layer, and the growth temperature of the second AlInN layer is higher than that of the first AlInN layer.

3. The light emitting diode epitaxial structure of claim 2, wherein: and a plurality of defects on the surface of the first AlInN layer are corroded to form a plurality of concave parts, and the concave parts are filled by local areas of the second AlInN layer.

4. The light emitting diode epitaxial structure of claim 3, wherein: the thickness of the first AlInN layer and the second AlInN layer is 10-100 nm.

5. The light emitting diode epitaxial structure of claim 1, wherein: the AlInN insertion layer is undoped.

6. The light emitting diode epitaxial structure of claim 1, wherein: the AlInN insertion layer is p-type doped.

7. The light emitting diode epitaxial structure of claim 1, wherein: the AlInN insertion layer is undoped along one part of the thickness direction and doped p-type along the other part.

8. The light emitting diode epitaxial structure of claim 1, wherein: the multiple quantum well light emitting layer includes at least one InGaN quantum well layer and at least one GaN quantum barrier layer that are alternately stacked.

9. The light emitting diode epitaxial structure of claim 8, wherein: and at least one InGaN quantum well layer and at least one GaN quantum barrier layer are alternately laminated for 1-20 periods.

10. The light emitting diode epitaxial structure of claim 1, wherein: the light emitting diode epitaxial structure comprises a low-temperature GaN buffer layer, a non-doped high-temperature GaN layer, an n-type GaN layer, an InGaN/GaN multi-quantum well light emitting layer, a p-type AlGaN electron blocking layer, an AlInN insertion layer, a p-type GaN transition layer and a p-type GaN layer which are sequentially grown on a substrate.

11. The light emitting diode epitaxial structure of claim 10, wherein: the substrate includes any one of a sapphire substrate, a silicon carbide substrate, a silicon substrate, a zinc oxide substrate, or a gallium nitride substrate.