CN216389258U

CN216389258U - Dry etching lower electrode

Info

Publication number: CN216389258U
Application number: CN202123172939.0U
Authority: CN
Inventors: 张立祥; 赵凯
Original assignee: Suzhou Zhongxinlian Electronic Materials Co ltd
Current assignee: Suzhou Zhongxinlian Electronic Materials Co ltd
Priority date: 2021-12-16
Filing date: 2021-12-16
Publication date: 2022-04-26
Anticipated expiration: 2031-12-16

Abstract

The utility model discloses a dry etching lower electrode, which comprises a metal substrate, a dielectric layer, an electrode layer, a one-way vacuum valve, a helium channel positioned at the bottom of the metal substrate, a plurality of helium holes and lifting pin holes, wherein the helium holes and the lifting pin holes penetrate through the dielectric layer, the electrode layer and the metal substrate; a plurality of helium gas pocket bottom all is connected with the helium gas passageway, and helium gets into through the helium gas entry the helium gas passageway to from the downthehole outflow of helium gas, be provided with a plurality of floating points on the dielectric layer, just the dielectric layer upper surface is provided with peripheral arch along the limit, be close to peripheral arch department on the dielectric layer and be provided with the recess, a plurality of helium gas outflow through-holes have been seted up to the recess, helium gas passageway, helium gas hole and helium gas outflow through-hole form the return circuit of helium gas circulation. The utility model effectively reduces the scratch problem of the floating point on the bottom surface of the glass substrate and avoids the helium leakage phenomenon.

Description

Dry etching lower electrode

Technical Field

The utility model relates to the technical field of dry etching, in particular to a dry etching lower electrode.

Background

The dry etching is a core process for manufacturing the LCD and AMOLED panels, and a core component required in the dry etching equipment is a lower electrode which is used for fixing the glass substrate by electrostatic adsorption in the dry etching process to prevent the glass substrate from moving. The currently common bottom electrode structures include two types: with and without floating points. In the dry etching of LCD panels of 8.5 th generation and above, a lower electrode with a floating point is usually used, and the structure of the lower electrode is shown in fig. 1, and mainly includes a metal substrate, a lower dielectric layer, an electrode layer, an upper dielectric layer, a floating point, a peripheral protrusion, a helium gas channel, a power supply portion, and a lift-pin hole. During the use, the glass substrate is placed on the lower electrode, is supported by the peripheral arch and the floating point on surface to produce electrostatic absorption power by the voltage of applying on the electrode layer, simultaneously, helium flows to the glass substrate bottom surface through the helium passageway, cools off the glass substrate, prevents that it leads to the high temperature because of the heat that releases among the dry etching process.

However, the above-mentioned lower electrode with floating point generally has two problems:

1. the floating point material generally adopts alumina or yttria, wherein the hardness of the alumina is far higher than that of the glass substrate, and the hardness of the yttria is slightly higher than that of the glass substrate, so that scratches are easily left on the bottom surface of the glass substrate due to friction in the use process of the electrode, and the product is poor;

2. in the dry etching process, when the glass substrate is cooled by helium, the helium enters the pores on the surfaces of the glass substrate and the lower electrode from the helium hole and flows out from the contact surface of the glass substrate and the peripheral bulges. Since the helium gas flowing out becomes a part of the gas in the dry etching cavity, the gas flow flowing out through the gap between the glass substrate and the peripheral protrusion needs to be controlled, and if the gas flow is too large, the performance of the formed plasma is affected, and the etching effect is further affected. In the conventional dry etching process, the helium gas used has a high pressure, which often causes excessive gas flow flowing out through the glass substrate and the peripheral protrusion, i.e., helium leakage.

Therefore, it is necessary to design a dry etching lower electrode to solve the above problems.

SUMMERY OF THE UTILITY MODEL

In order to overcome the above disadvantages, an object of the present invention is to provide a dry etching bottom electrode, which effectively reduces the scratch problem of the floating point on the bottom surface of the glass substrate and avoids the helium leakage.

In order to achieve the above purposes, the utility model adopts the technical scheme that: a dry etching lower electrode comprises a metal matrix, a dielectric layer, a power supply part, an electrode layer, a one-way vacuum valve, a helium channel positioned at the bottom of the metal matrix, a plurality of helium holes penetrating through the dielectric layer, the electrode layer and the metal matrix and a lifting pin hole; a plurality of helium gas pocket bottom all is connected with the helium gas passageway, and helium gets into through the helium gas entry the helium gas passageway to from the downthehole outflow of helium gas, be provided with a plurality of floating points on the dielectric layer, just the dielectric layer upper surface is provided with peripheral arch along the limit, be close to peripheral arch department on the dielectric layer and be provided with the recess, a plurality of helium gas outflow through-holes have been seted up to the recess, helium gas passageway, helium gas hole and helium gas outflow through-hole form the return circuit of helium gas circulation.

Furthermore, the helium outflow through-hole specifically is located four angles of dielectric layer, just be provided with the ceramic tube of laminating pore wall in the helium outflow through-hole, just the ceramic tube is glued fixedly through the pottery, sets up ceramic tube and can protect the inboard metallic matrix of helium outflow through-hole can not receive plasma's erosion at the in-process of dry etching in the helium outflow through-hole.

Furthermore, the bottom of the ceramic tube is connected with a vacuum one-way valve which can prevent air around the equipment from flowing backwards into the dry etching cavity, so that the vacuum degree in the dry etching cavity is ensured.

Furthermore, the dielectric layer is located on the upper end face of the metal substrate and comprises an upper dielectric layer and a lower dielectric layer, and an electrode layer is horizontally arranged between the upper dielectric layer and the lower dielectric layer.

Furthermore, dielectric layer, electrode layer and floating point all form through plasma meltallizing, peripheral arch forms through grinding, the material hardness of floating point is less than the material hardness of glass substrate, can effectual reduction to the fish tail of glass substrate ground, reduce the defective rate of product.

Furthermore, the metal substrate is made of aluminum or stainless steel, the electrode layer is made of tungsten or molybdenum, the dielectric layer and the peripheral protrusions are made of aluminum oxide or yttrium oxide or aluminum nitride, and the dielectric layer and the peripheral protrusions are made of ceramics with good insulating property.

The utility model has the beneficial effects that:

1. according to the utility model, the floating point is made of a material with hardness lower than that of the glass substrate, and is made of calcium fluoride or zinc oxide, so that the problem of scratching the bottom surface of the glass substrate by the floating point can be effectively reduced, and the product reject ratio is reduced;

2. according to the utility model, the groove which is close to the peripheral bulge is arranged on the upper dielectric layer, the plurality of helium outflow through holes are formed in the groove, and helium flowing in from the helium inlet flows out of the metal matrix through the helium through holes and the vacuum one-way valve after cooling the glass substrate, so that an in-and-out loop is provided for circulation of the helium in the whole process, therefore, the problem of excessive leakage of the helium on the contact surface of the glass substrate and the peripheral bulge can be effectively reduced, and the helium leakage phenomenon can be avoided.

Drawings

FIG. 1 is a top view of a prior art floating-point lower electrode structure;

FIG. 2 is a cross-sectional view of a prior art lower electrode structure with floating point;

FIG. 3 is a top view of the overall structure of the lower electrode in the present invention;

FIG. 4 is a schematic cross-sectional view A-A of FIG. 3;

FIG. 5 is a schematic cross-sectional view B-B of FIG. 3;

in the figure: 1. a metal substrate; 2. a dielectric layer; 21. an upper dielectric layer; 22. a lower dielectric layer; 3. a power feeding section; 4. an electrode layer; 5. a floating point; 6. a peripheral bulge; 7. a groove; 8. a helium gas passage; 9. a helium gas inlet; 10. helium gas flows out of the through hole; 11. lifting pin holes; 12. helium gas holes.

Detailed Description

The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the utility model easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the utility model.

Referring to fig. 3 to 5, the dry etching lower electrode in the present embodiment includes a metal substrate 1, a dielectric layer, a power supply portion 3, an electrode layer 4, a one-way vacuum valve, a helium gas channel 8 located at the bottom of the metal substrate 1, a plurality of helium gas holes 12 penetrating through the dielectric layer 2, the electrode layer 4 and the metal substrate 1, and a lift pin hole 11; the bottoms of the helium holes 12 are connected with a helium channel 8, the helium channel 8 is horizontally arranged, helium enters the helium channel 8 through a helium inlet 9 and flows out of the helium holes 12, and the helium flowing out of the helium holes 12 flows into a gap between the glass substrate and the dielectric layer 2 to cool the glass substrate; a plurality of floating points 5 are arranged on the dielectric layer 2, peripheral bulges 6 are arranged along the edges of the upper surface of the dielectric layer 2, and the floating points 5 and the peripheral bulges 6 support the glass substrate placed on the lower electrode; the position, close to the peripheral bulge 6, of the dielectric layer 2 is provided with the groove 7, the groove 7 is provided with the helium outflow through holes 10, the helium channel 8, the helium hole 12 and the helium outflow through holes 10 form a helium circulation loop, and due to the fact that a helium flow inlet and outlet loop is provided, the problem that excessive leakage of helium occurs on the contact surface between the glass substrate and the peripheral bulge due to the fact that the helium is too large in air pressure can be effectively solved.

In another embodiment, the helium outflow through holes 10 are specifically located at four corners of the dielectric layer 2, ceramic tubes attached to the hole walls are arranged in the helium outflow through holes 10, the ceramic tubes are fixed through ceramic glue, and the arrangement of the ceramic tubes in the helium outflow through holes 10 can protect the metal substrate 1 inside the helium outflow through holes 10 from being eroded by plasma in the dry etching process.

The bottom of the ceramic tube is connected with a vacuum one-way valve, helium needs to be stopped when a glass substrate is replaced, and the vacuum one-way valve can prevent air around the equipment from flowing backwards into the dry etching cavity, so that the vacuum degree in the dry etching cavity is ensured.

In another embodiment, the dielectric layer 2 is located on the upper end surface of the metal substrate 1 and includes an upper dielectric layer 21 and a lower dielectric layer 22, and the electrode layer 4 is horizontally disposed between the upper dielectric layer 21 and the lower dielectric layer 22.

The dielectric layer 2, the electrode layer 4 and the floating points 5 are all formed by plasma fusion, the peripheral bulges 6 are formed by grinding, the material hardness of the floating points 5 is lower than that of the glass substrate, the scratch to the ground of the glass substrate can be effectively reduced, and the reject ratio of products is reduced, wherein the floating points are made of calcium fluoride or zinc oxide.

The metal substrate 1 is made of aluminum or stainless steel, the electrode layer 4 is made of tungsten or molybdenum, the dielectric layer and the peripheral protrusions 6 are made of aluminum oxide or yttrium oxide or aluminum nitride, the dielectric layer and the peripheral protrusions 6 are made of ceramics with good insulating property, and the ceramics with good insulating property is made of aluminum oxide or yttrium oxide.

The working principle is as follows: helium flows into the metal today from a helium inlet 9 formed in the bottom of the metal base body 1, flows to the dielectric layer 2 through a plurality of helium holes 12 arranged in the metal base body 1, and cools the glass substrate, the helium in the cooling process flows into the helium outflow through hole 10 in the groove 7 under the action of the vacuum one-way valve, and flows out of the metal base body 1 from the bottom of the helium outflow through hole 10, so that the helium forms a helium circulation loop among the helium channel 8, the helium hole 12 and the helium outflow through hole 10, and the problem of excessive leakage of the helium on the contact surface of the glass substrate and the peripheral protrusion 6 is effectively solved.

The above embodiments are merely illustrative of the technical concept and features of the present invention, and the present invention is not limited thereto, and any equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.

Claims

1. A dry etching lower electrode is characterized in that: the device comprises a metal matrix (1), a dielectric layer (2), a power supply part (3), an electrode layer (4), a one-way vacuum valve, a helium channel (8) positioned at the bottom of the metal matrix (1), a plurality of helium holes (12) penetrating through the dielectric layer, the electrode layer (4) and the metal matrix (1) and lifting pin holes (11); a plurality of helium gas pocket (12) bottom all is connected with helium gas passageway (8), and helium gets into through helium gas entry (9) helium gas passageway (8) to flow out in following helium gas pocket (12), be provided with a plurality of floating points (5) on dielectric layer (2), just dielectric layer (2) upper surface edgewise is provided with peripheral arch (6), be close to peripheral arch (6) on dielectric layer (2) and locate to be provided with recess (7), a plurality of helium gas outflow through-holes (10) have been seted up in recess (7) department, helium gas passageway (8), helium gas pocket (12) and helium gas outflow through-hole (10) form the return circuit of helium gas circulation.

2. A dry-etched lower electrode according to claim 1, wherein: helium gas outflow through-hole (10) specifically are located four angles of dielectric layer (2), just be provided with the ceramic pipe of laminating pore wall in helium gas outflow through-hole (10), just the ceramic pipe is glued fixedly through the pottery.

3. A dry-etched lower electrode according to claim 2, wherein: the bottom of the ceramic tube is connected with a vacuum one-way valve.

4. A dry-etched lower electrode according to claim 1, wherein: the dielectric layer (2) is positioned on the upper end face of the metal base body (1) and comprises an upper dielectric layer (21) and a lower dielectric layer (22), and an electrode layer (4) is horizontally arranged between the upper dielectric layer (21) and the lower dielectric layer (22).

5. A dry-etched lower electrode according to claim 1, wherein: the dielectric layer (2), the electrode layer (4) and the floating points (5) are formed by plasma fusion, the peripheral bulges (6) are formed by grinding, and the material hardness of the floating points (5) is lower than that of the glass substrate.

6. A dry-etched lower electrode according to claim 1, wherein: the metal substrate (1) is made of aluminum or stainless steel, the electrode layer (4) is made of tungsten or molybdenum, and the dielectric layer (2) and the peripheral protrusions (6) are made of aluminum oxide or yttrium oxide or aluminum nitride.