CN114121766A - Bipolar electrostatic chuck for pan-semiconductor manufacturing equipment and manufacturing method thereof - Google Patents
Bipolar electrostatic chuck for pan-semiconductor manufacturing equipment and manufacturing method thereof Download PDFInfo
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- CN114121766A CN114121766A CN202111398828.3A CN202111398828A CN114121766A CN 114121766 A CN114121766 A CN 114121766A CN 202111398828 A CN202111398828 A CN 202111398828A CN 114121766 A CN114121766 A CN 114121766A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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Abstract
The invention discloses a bipolar electrostatic chuck for a pan-semiconductor manufacturing device and a manufacturing method thereof, wherein the bipolar electrostatic chuck comprises a metal matrix upper plate, a metal matrix lower plate, an insulating layer I and an insulating layer II, wherein the insulating layer I and the insulating layer II are positioned on the upper surface of the metal matrix upper plate; the first electrode layer and the second electrode layer are horizontally, alternately and uniformly arranged in the middle of the first insulating layer and the second insulating layer, the first electrode layer and the second electrode layer are both formed by a plurality of electrode wires, the width of each electrode wire is 0.5-1 mm, the distance between the electrode wires is 0.2-1 mm, the first electrode layer and the second electrode layer are respectively connected with two power supply rods positioned in the upper plate of the metal matrix, and when wafers are adsorbed, voltages with opposite polarities are respectively conducted on the two power supply rods, so that static electricity with opposite polarities is formed on the surfaces of the first electrode layer and the second electrode layer. The invention can generate enough adsorption force on the surface of the electrostatic chuck under lower voltage, reduce the probability of discharge when the electrostatic chuck is used, accelerate the speed of electrostatic dissipation when a wafer or a glass substrate is replaced and improve the utilization rate of equipment.
Description
Technical Field
The invention relates to the technical field of a pan-type semiconductor manufacturing device, in particular to a bipolar electrostatic chuck for the pan-type semiconductor manufacturing device and a manufacturing method thereof.
Background
The electrostatic chuck is also called an electrostatic chuck, is used in processing equipment in the semiconductor industry (chip, panel, photoelectric industry), such as dry etching equipment, chemical vapor deposition equipment, ion implantation equipment and the like, and is a core functional component of the equipment. Its main function is to fix the wafer or glass substrate during the chip or panel processing.
Principle of electrostatic chuck adsorbing wafer or glass substrate: the surface of the electrostatic chuck is provided with an upper layer and a lower layer of insulation and an electrode layer clamped between the upper layer and the lower layer of insulation. When the electrostatic chuck is used, voltage is applied to the electrode layer, so that static electricity with opposite polarity is generated between the electrostatic chuck and the wafer or the glass substrate, and coulomb force is formed to fix the wafer or the glass substrate.
The electrostatic chucks currently used are classified into a unipolar type and a bipolar type according to the structure of an electrode layer. The bipolar chuck has high electrostatic discharge speed, has short waiting time when replacing the wafer/glass substrate, and can improve the utilization rate of equipment, so the bipolar chuck is widely applied to a procedure with high replacement frequency of the wafer/glass substrate. The bipolar electrostatic chuck has a structure as shown in fig. 1, and includes, from bottom to top: the device comprises a metal substrate, a first insulating layer, an electrode layer and a second insulating layer. In addition, there are auxiliary structures such as a power feeding portion, a lift-pin hole, a helium gas hole, a helium tank, and the like. Wherein the electrode layer comprises two sets of electrode lines (as shown in fig. 2 and fig. 3) that are interlaced with each other but insulated. When the electrostatic chuck is used, the two sets of electrode wires of the electrode layer are respectively connected with positive and negative voltages, so that charges with opposite polarities are formed on the wafer/glass substrate, and electrostatic adsorption force is generated.
The adsorption force of the bipolar electrostatic chuck is determined by the total area of the electrode layers, and the larger the total area is, the more the adhesive voltage is, the enough electrostatic adsorption force can be generated. Therefore, in the fabrication of the bipolar electrostatic chuck, it is necessary to minimize the width between adjacent electrode lines to increase the total area of the electrode layer, so that a sufficient chucking force can be provided with a small voltage when the chuck is used. When the voltage applied to the chuck is small, the probability of discharge can be effectively reduced, and the product reject ratio is reduced.
When the wafer/glass substrate is replaced, the equivalent circuit of the bipolar chuck for discharging static electricity is shown in fig. 3, wherein the dashed area in fig. 1 is equivalent to one RC circuit unit in fig. 4. When the static electricity is discharged, the change of the residual voltage u of each RC circuit unit with time is as shown in the following formula.
Wherein U is the potential difference applied to the positive and negative electrodes of the electrode layer of the electrostatic chuck, and t is the time. The capacitance C is proportional to the area of each electrode line, and the smaller the area is, the smaller the capacitance C is, and the faster the static electricity is discharged. Therefore, in order to accelerate the electrostatic discharge speed of the bipolar electrostatic chuck, thereby reducing the waiting time for replacing the wafer/glass substrate and improving the equipment utilization rate, the width of each electrode wire in the electrode layer needs to be reduced as much as possible.
According to the above analysis, it is desirable that the electrode layer of the bipolar electrostatic chuck simultaneously decrease the width of the electrode line and the spacing between the electrode lines as small as possible, but the width and spacing between the electrode lines in the bipolar electrostatic chuck are usually more than 1mm at present. Due to the large width of the electrode lines, the time required for waiting for the electrostatic chuck to discharge static electricity when replacing the chip/wafer is relatively long. Meanwhile, due to the fact that the space between the electrode wires is large, the area of the electrode layer occupies less than 1/2 of the whole adsorption surface of the electrostatic chuck, and therefore relatively large voltage is needed to form enough adsorption force.
The line width and spacing are currently limited by existing processes. The existing process for manufacturing the electrode layer generally comprises the steps of sticking a shielding jig on the surface of an electrostatic chuck by using a double-sided adhesive tape, hollowing out the shielding jig by using laser according to the arrangement pattern of the electrode layer, and then spraying a metal material at the hollow-out part of the shielding jig by using a plasma fusion mode to form the electrode layer. However, when the method is used, it is difficult to simultaneously achieve the hollowing and the spacing of the shielding jig to be less than 1mm, and even if the spacing is less than 1mm, it is also difficult to attach the double-sided adhesive tape to the shielding jig without shielding the hollowing part, and when the width of the double-sided adhesive tape is too thin, sufficient adhesive force cannot be provided in the melting and spraying process, and the shielding jig is easily separated from the surface of the electrode due to thermal deformation.
Therefore, it is desirable to provide a bipolar electrostatic chuck for a generic semiconductor manufacturing equipment and a method for fabricating the same to solve the above problems.
Disclosure of Invention
In order to overcome the above disadvantages, an object of the present invention is to provide a bipolar electrostatic chuck for a semiconductor manufacturing apparatus and a method for manufacturing the same, which can generate sufficient adsorption force on the surface of the electrostatic chuck at a low voltage, reduce the probability of discharge when the electrostatic chuck is used, increase the speed of electrostatic dissipation when a wafer or a glass substrate is replaced, and improve the utilization rate of the apparatus.
In order to achieve the above purposes, the invention adopts the technical scheme that: a bipolar electrostatic chuck for a pan-semiconductor manufacturing device comprises a metal substrate upper plate, a metal substrate lower plate, an insulating layer I and an insulating layer II, wherein the insulating layer I and the insulating layer II are positioned on the upper surface of the metal substrate upper plate; the wafer or glass substrate adsorption device is characterized in that an electrode layer I and an electrode layer II are horizontally and uniformly arranged in a staggered mode in the middle of the insulating layer I and the insulating layer II, the electrode layer I and the electrode layer II are both composed of a plurality of electrode wires, the width of each electrode wire is 0.5-1 mm, the distance between the electrode wires is 0.2-1 mm, the electrode layer I and the electrode layer II are respectively connected with two power supply rods located in the upper plate of a metal matrix, when a wafer or glass substrate is adsorbed, voltages with opposite polarities are respectively conducted on the two power supply rods, static electricity with opposite polarities is formed on the surfaces of the electrode layer I and the electrode layer II, and a cooling gas through hole and a lifting pin through hole penetrating through the upper plate of the metal matrix are formed in the insulating layer II.
Preferably, the metal matrix upper plate and the metal matrix lower plate are both made of aluminum alloy or stainless steel, the metal matrix upper plate and the metal matrix lower plate are combined through vacuum brazing, and a cooling gas channel connected with the cooling gas through hole is horizontally formed between the metal matrix upper plate and the metal matrix lower plate.
Preferably, the first insulating layer and the second insulating layer are sequentially arranged along the height direction of the upper plate of the metal matrix, and are made of ceramic materials and have the thickness of 200-500 microns.
Preferably, the electrode wire is made of high-purity tungsten or molybdenum, and the thicknesses of the first electrode layer and the second electrode layer are 30-100 micrometers.
Preferably, a first insulating bush for preventing the metal matrix in the cooling gas through hole from being eroded by plasma, a second insulating bush for preventing the metal matrix in the lift pin through hole from being eroded by plasma, and a third insulating bush for preventing the power feeding rod from being conducted with the metal matrix are bonded to the inside of the upper metal matrix plate through vacuum glue, the power feeding rod is located in a power feeding portion through hole penetrating through the upper metal matrix plate and the lower metal matrix plate, and the first insulating bush, the second insulating bush, and the third insulating bush are all made of sintered alumina.
A method for manufacturing a bipolar electrostatic chuck for a generic semiconductor manufacturing device comprises the following steps:
s1, respectively processing an upper metal matrix plate and a lower metal matrix plate by using a lathe and a processing center, wherein the upper metal matrix plate and the lower metal matrix plate comprise a lifting pin through hole, a cooling gas through hole, a power supply part through hole and a cooling gas channel which are positioned on the upper metal matrix plate, and the processed upper metal matrix plate and the processed lower metal matrix plate are welded by vacuum brazing;
s2: cleaning the welded upper metal matrix plate and lower metal matrix plate, mounting a first sintered alumina insulation bushing and a second insulation bushing at the cooling gas through hole and the lifting pin through hole, mounting electrode rods and corresponding third insulation bushings in the two power supply part through holes, bonding by using vacuum glue, and drying in an oven after mounting to harden the glue;
s3: performing sand blasting treatment on the dried upper metal matrix plate and the dried lower metal matrix plate to enable the surface roughness of the upper metal matrix plate and the lower metal matrix plate to reach 2.0-3.0 micrometers, wherein the sand blasting material is 80-mesh white corundum, and the sand blasting pressure is 0.4-0.6 kgf;
s4: plasma spraying is adopted to form an insulating layer I on the upper surface of an upper plate of a metal matrix, the used material is ceramic powder with the purity of 99.99 percent and the diameter of 10-100 microns, such as aluminum oxide, yttrium fluoride, yttrium oxyfluoride, YAG, aluminum nitride and the like, and the spraying thickness is 200-500 microns;
s5: after the first insulating layer is sprayed, polishing the position of the power supply rod to expose the power supply rod, so that the power supply rod is communicated with the electrode layer when the electrode layer is sprayed in the next step;
s6, preparing an electrode layer spraying and shielding jig, wherein the design of the shielding jig is as follows:
6-1, two sets of jigs are arranged and are respectively used on the first electrode layer and the second electrode layer;
6-2, each set of shielding jig is divided into a plurality of pieces, the hollowed parts of the two sets of shielding jigs are combined together and are consistent with the distribution of the electrode wires in the electrode layer I or the electrode layer II, the hollowed parts in the two sets of shielding jigs are the width of the electrode wires, and the gap between the adjacent hollowed parts is not less than 2 mm;
6-3, the shielding jig is made of stainless steel;
s7, attaching the shielding jig on the first insulating layer by using heat-resistant double-sided adhesive tape one by one, forming a first electrode layer and a second electrode layer at the hollow part of the shielding jig by using a plasma spraying method, wherein the materials for spraying the first electrode layer and the second electrode layer are 99.99% tungsten powder, after spraying, the thicknesses of the first electrode layer and the second electrode layer are 30-100 micrometers, and the resistance value between the point feeding rod and the electrode layer is less than 10 omega;
s8: according to the step of S4, spraying metal on the surface of the electrode layer to form a second insulating layer, wherein the spraying thickness is 300-600 microns, and a margin of 100 microns is reserved for subsequent fine machining;
s9: and finally, carrying out finish machining, grinding and polishing on the electrostatic chuck, and machining the electrostatic chuck to the required size, flatness and roughness.
The invention has the beneficial effects that:
1. the first electrode layer and the second electrode layer which are uniformly arranged at intervals are arranged on the surface of the electrostatic chuck, the interval between the first electrode layer and the two adjacent electrode layers is small, and the area of the adsorption surface of the electrostatic chuck occupied by the first electrode layer and the second electrode layer is increased, so that enough and uniform adsorption force can be generated on a wafer or a glass substrate without applying high voltage to a power supply rod;
2. because the electrode wire widths of the first electrode layer and the second electrode layer are smaller, after the first electrode layer and the second electrode layer stop applying voltage, the static electricity releasing speed is high, so that the waiting time is short when the wafer/glass substrate is replaced, and the utilization rate of equipment can be improved.
Drawings
FIG. 1 is a schematic diagram of a prior art bipolar electrostatic chuck;
FIG. 2 is a schematic diagram of a prior art electrode layer of a bipolar electrostatic chuck;
FIG. 3 is a schematic view of another prior art electrode layer structure of a bipolar electrostatic chuck;
FIG. 4 is an equivalent circuit of a bipolar chuck discharge of the prior art;
FIG. 5 is a front view of the overall structure of a preferred embodiment of the present invention;
FIG. 6 is a schematic diagram of a first electrode layer shielding fixture according to a preferred embodiment of the invention;
FIG. 7 is a schematic diagram of a second set of electrode masking tools according to a preferred embodiment of the invention;
FIG. 8 is a schematic structural diagram of two shielding jigs according to a preferred embodiment of the invention;
in the figure: 1. a metal base lower plate; 2. a metal substrate upper plate; 3. a first insulating layer; 4. a second insulating layer; 5. a first electrode layer; 6. a second electrode layer; 7. a lift pin through hole; 8. a cooling gas through hole; 9. a first insulating bush; 10. a cooling gas channel; 11. a second insulating bush; 12. a third insulating bushing; 13. a power feeding rod; 14. a feed portion through hole.
Detailed Description
The following detailed description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will make the advantages and features of the invention easier to understand by those skilled in the art, and thus will clearly and clearly define the scope of the invention.
Referring to fig. 5 to 8, the bipolar electrostatic chuck for a general semiconductor manufacturing apparatus in the present embodiment comprises a metal substrate upper plate 2, a metal substrate lower plate 1, an insulating layer one 3 and an insulating layer two 4 on the upper surface of the metal substrate upper plate 2; the first electrode layer 5 and the second electrode layer 6 are horizontally and uniformly arranged in a staggered manner between the first insulating layer 3 and the second insulating layer 4, referring to fig. 5, the first electrode layer 5 and the second electrode layer 6 are staggered to form a glass substrate and are not conducted with each other, when the electrostatic chuck is used, the two point-feeding rods are connected with voltages with opposite polarities, so that static electricity with opposite polarities is formed on the electrode layer I5 and the electrode layer II 6, the first electrode layer 5 and the second electrode layer 6 are both composed of a plurality of electrode wires, the width of each electrode wire is 0.5-1 mm, the space between the electrode wires is 0.2-1 mm, the space between the first electrode layer and the two adjacent electrode wires is small, the area of the first electrode layer and the second electrode layer occupying the whole electrostatic chuck adsorption surface is increased, therefore, enough and uniform adsorption force can be generated on the wafer or the glass substrate without applying high voltage to the power supply rod; electrode layer 5 and electrode layer two 6 are connected with two power supply rods 13 that are located metal matrix upper plate 2 respectively, and when adsorbing the wafer, lead to the opposite voltage of polarity respectively to two power supply rods 13, make electrode layer 5 and electrode layer two 6 surface formation opposite static of polarity, be provided with cooling gas through-hole 8 and promotion round pin through-hole 7 that run through to metal matrix upper plate 2 on the insulating layer two 4, when wafer or glass substrate need be changed, the promotion round pin stretches out from promotion round pin through-hole 7 to lift up wafer or glass substrate, be convenient for change.
The metal matrix upper plate 2 and the metal matrix lower plate 1 are made of aluminum alloy or stainless steel, the metal matrix upper plate 2 and the metal matrix lower plate 1 are combined through vacuum brazing, a cooling gas channel 10 connected with a cooling gas through hole 8 is horizontally formed between the metal matrix upper plate 2 and the metal matrix lower plate 1, and the cooling gas channel 10 is arranged so that cooling gas can be introduced before ions are formed and the problem that the temperature of a wafer/glass substrate is too high in the moment of plasma formation is solved.
The metal matrix upper plate 2 and the metal matrix lower plate 1 are made of A6061 aluminum, and referring to the attached drawing 5, the width of each electrode wire is specifically 0.6mm, the interval between the electrode wires is 0.2 mm, the electrode wires are distributed as shown in fig. 3, the electrode layer I5 is connected with the power supply rod 13 on the left side of the metal matrix upper plate 2, and the electrode layer II 6 is connected with the power supply rod 13 on the right side of the metal matrix upper plate 2.
Insulating layer one 3 and insulating layer two 4 set gradually along the direction of height of metal matrix upper plate 2, insulating layer one 3 and insulating layer two 4 are ceramic material, and thickness is 200 ~ 500 microns.
Wherein, the first insulating layer and the second insulating layer are made of yttrium oxide with a thickness of 400 microns.
The electrode wire is made of high-purity tungsten or molybdenum, and the thickness of the first electrode layer and the second electrode layer is 30-100 micrometers.
Wherein, the thickness of the first electrode layer and the second electrode layer is selected to be 50 micrometers.
Referring to fig. 5, the first electrode layer 5 and the second electrode layer 6 are distributed on the adsorption surface of the whole electrostatic chuck, so as to ensure that the adsorption force applied to the wafer or the glass substrate is uniformly distributed in the use process.
The inner portion of the metal matrix upper plate 2 is bonded with a first insulating bush 9 for preventing the metal matrix in the cooling gas through hole 8 from being eroded by plasma, a second insulating bush 11 for preventing the metal matrix in the lift pin through hole 7 from being eroded by plasma, and a third insulating bush 12 for preventing the power feeding rod 13 from being conducted with the metal matrix through vacuum glue, the power feeding rod 13 is located in a power feeding portion through hole 14 penetrating through the metal matrix upper plate 2 and the metal matrix lower plate 1, and the first insulating bush 9, the second insulating bush 11 and the third insulating bush 12 are all made of sintered alumina.
The working principle is as follows: when the electrostatic chuck is used, voltages with opposite polarities are applied to the two feeding rod contacts 13, static electricity with opposite polarities is formed on the first electrode layer and the second electrode layer, and accordingly the static electricity in the first electrode layer and the second electrode layer further forms static electricity on the wafer/glass substrate, and an adsorption force is generated to fix the wafer/glass substrate. Because the interval of the electrode wires is small, the area of the whole electrostatic chuck adsorption surface occupied by the electrode layer I and the electrode layer II is large, and therefore, enough and uniform adsorption force can be generated on a wafer or a glass substrate by using a small voltage. And because the electrode wire width of the first electrode layer and the second electrode layer is smaller, when the voltage application to the electrode layer is stopped, the static electricity releasing speed is higher, so that the waiting time is shorter when the wafer/glass substrate is replaced, and the utilization rate of equipment can be improved.
A method for manufacturing a bipolar electrostatic chuck for a generic semiconductor manufacturing device comprises the following steps:
s1, respectively processing an upper metal matrix plate and a lower metal matrix plate by using a processing center, wherein the upper metal matrix plate and the lower metal matrix plate comprise a lifting pin through hole, a cooling gas through hole, a power supply part through hole and a cooling gas channel which are positioned on the upper metal matrix plate, and the processed upper metal matrix plate and the processed lower metal matrix plate are welded by vacuum brazing;
s2: cleaning the welded upper metal matrix plate and lower metal matrix plate, mounting a first sintered alumina insulation bushing and a second insulation bushing at the cooling gas through hole and the lifting pin through hole, mounting electrode rods and corresponding third insulation bushings in the two power supply part through holes, bonding by using vacuum glue, and drying in an oven after mounting to harden the glue;
s3: performing sand blasting treatment on the dried upper metal matrix plate and the dried lower metal matrix plate to enable the surface roughness of the upper metal matrix plate and the lower metal matrix plate to reach 2.0-3.0 micrometers, wherein the sand blasting material is 80-mesh white corundum, and the sand blasting pressure is 0.4-0.6 kgf;
wherein the selected sand blasting pressure is 0.4 kgf;
s4: plasma spraying is adopted to form an insulating layer I on the upper surface of an upper plate of a metal matrix, the used material is ceramic powder with the purity of 99.99 percent and the diameter of 10-100 microns, such as aluminum oxide, yttrium fluoride, yttrium oxyfluoride, YAG, aluminum nitride and the like, and the spraying thickness is 200-500 microns;
wherein the first insulating layer is made of yttrium oxide and has a thickness of 400 microns;
s5: after the first insulating layer is sprayed, polishing the position of the power supply rod to expose the power supply rod, so that the power supply rod is communicated with the electrode layer when the electrode layer is sprayed in the next step;
s6, preparing an electrode layer spraying and shielding jig, wherein the design of the shielding jig is as follows (refer to FIGS. 6-8, wherein the shielding jig in FIG. 8 is equivalent to the effect of the shielding jig in FIGS. 6 and 7 after being used one by one):
6-1, two sets of jigs are arranged and are respectively used on the first electrode layer and the second electrode layer;
6-2, each set of shielding jig is divided into a plurality of pieces, the hollowed parts of the two sets of shielding jigs are combined together and are consistent with the distribution of the electrode wires in the electrode layer I or the electrode layer II, the hollowed parts in the two sets of shielding jigs are the width of the electrode wires, and the gap between the adjacent hollowed parts is not less than 2 mm;
wherein, the width of fretwork department electrode line is specifically 0.6mm, and the clearance of adjacent fretwork department is preferred 2.6 mm. When the shielding jig is pasted, the double-sided adhesive is pasted between the hollow part. The spacing of the hollowed-out parts is 2.6mm, so that enough space can be used for sticking the double-sided adhesive tape, the hollowed-out parts can be prevented from being blocked when the double-sided adhesive tape is stuck, and meanwhile, the area of the double-sided adhesive tape is large enough to provide enough sticking force, so that the shielding jig is prevented from being separated from the surface of the electrode due to thermal deformation in the melting process;
6-3, the shielding jig is made of stainless steel, specifically 304 stainless steel;
s7, attaching the shielding jig on the first insulating layer by using heat-resistant double-sided adhesive tape one by one, forming a first electrode layer and a second electrode layer at the hollow part of the shielding jig by using a plasma spraying method, wherein the materials for spraying the first electrode layer and the second electrode layer are 99.99% tungsten powder, after spraying, the thicknesses of the first electrode layer and the second electrode layer are 30-100 micrometers, and the resistance value between the point feeding rod and the electrode layer is less than 10 omega;
wherein the specific thickness of the first electrode layer and the second electrode layer after spraying is 50 microns;
s8: according to the step of S4, spraying metal on the surface of the electrode layer to form a second insulating layer, wherein the spraying thickness is 300-600 microns, and a margin of 100 microns is reserved for subsequent fine machining;
the specific thickness of the second insulating layer is 500 micrometers;
s9: and finally, carrying out finish machining, grinding and polishing on the electrostatic chuck, and machining the electrostatic chuck to the required size, flatness and roughness.
The total area of the first electrode layer and the second electrode layer of the electrostatic chuck obtained by the process accounts for 75% of the area of the adsorption surface, and is remarkably increased compared with 50% of the total area of the electrode layers in the conventional electrostatic chuck. The line width of the electrode wire is only 0.6mm, and compared with the line width of 1mm, the discharge time can be shortened by 40%.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the present invention is not limited thereto, and any equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.
Claims (6)
1. A bipolar electrostatic chuck for a generic semiconductor manufacturing device, comprising: the insulation layer I and the insulation layer II are positioned on the upper surface of the metal matrix upper plate; the wafer or glass substrate adsorption device is characterized in that an electrode layer I and an electrode layer II are horizontally and uniformly arranged in a staggered mode in the middle of the insulating layer I and the insulating layer II, the electrode layer I and the electrode layer II are both composed of a plurality of electrode wires, the width of each electrode wire is 0.5-1 mm, the distance between the electrode wires is 0.2-1 mm, the electrode layer I and the electrode layer II are respectively connected with two power supply rods located in the upper plate of a metal matrix, when a wafer or glass substrate is adsorbed, voltages with opposite polarities are respectively conducted on the two power supply rods, static electricity with opposite polarities is formed on the surfaces of the electrode layer I and the electrode layer II, and a cooling gas through hole and a lifting pin through hole penetrating through the upper plate of the metal matrix are formed in the insulating layer II.
2. The bipolar electrostatic chuck for a flood semiconductor manufacturing apparatus according to claim 1, wherein: the metal matrix upper plate and the metal matrix lower plate are both made of aluminum alloy or stainless steel, the metal matrix upper plate and the metal matrix lower plate are combined through vacuum brazing, and a cooling gas channel connected with the cooling gas through hole is horizontally formed between the metal matrix upper plate and the metal matrix lower plate.
3. The bipolar electrostatic chuck for a flood semiconductor manufacturing apparatus according to claim 1, wherein: the first insulating layer and the second insulating layer are sequentially arranged along the height direction of the upper plate of the metal base body, and are made of ceramic materials and have the thickness of 200-500 microns.
4. The bipolar electrostatic chuck for a flood semiconductor manufacturing apparatus according to claim 1, wherein: the electrode wire is made of high-purity tungsten or molybdenum, and the thickness of the first electrode layer and the second electrode layer is 30-100 micrometers.
5. The bipolar electrostatic chuck for a flood semiconductor manufacturing apparatus according to claim 1, wherein: the inner portion of the metal matrix upper plate is bonded with a first insulating bush, a second insulating bush and a third insulating bush through vacuum glue, wherein the first insulating bush is used for preventing the metal matrix in the cooling gas through hole from being corroded by plasma, the second insulating bush is used for preventing the metal matrix in the lifting pin through hole from being corroded by plasma, the third insulating bush is used for preventing the power supply rod from being conducted with the metal matrix, the power supply rod is located in a power supply portion through hole penetrating through the metal matrix upper plate and the metal matrix lower plate, and the first insulating bush, the second insulating bush and the third insulating bush are all made of sintered alumina.
6. The method for manufacturing a bipolar electrostatic chuck for a general semiconductor manufacturing apparatus as recited in any one of claims 1 to 5, wherein: the method comprises the following steps:
s1, respectively processing an upper metal matrix plate and a lower metal matrix plate by using a lathe and a processing center, wherein the upper metal matrix plate and the lower metal matrix plate comprise a lifting pin through hole, a cooling gas through hole, a power supply part through hole and a cooling gas channel which are positioned on the upper metal matrix plate, and the processed upper metal matrix plate and the processed lower metal matrix plate are welded by vacuum brazing;
s2: cleaning the welded upper metal matrix plate and lower metal matrix plate, mounting a first sintered alumina insulation bushing and a second insulation bushing at the cooling gas through hole and the lifting pin through hole, mounting electrode rods and corresponding third insulation bushings in the two power supply part through holes, bonding by using vacuum glue, and drying in an oven after mounting to harden the glue;
s3: performing sand blasting treatment on the dried upper metal matrix plate and the dried lower metal matrix plate to enable the surface roughness of the upper metal matrix plate and the lower metal matrix plate to reach 2.0-3.0 micrometers, wherein the sand blasting material is 80-mesh white corundum, and the sand blasting pressure is 0.4-0.6 kgf;
s4: plasma spraying is adopted to form an insulating layer I on the upper surface of an upper plate of a metal matrix, the used material is ceramic powder with the purity of 99.99 percent and the diameter of 10-100 microns, such as aluminum oxide, yttrium fluoride, yttrium oxyfluoride, YAG, aluminum nitride and the like, and the spraying thickness is 200-500 microns;
s5: after the first insulating layer is sprayed, polishing the position of the power supply rod to expose the power supply rod, so that the power supply rod is communicated with the electrode layer when the electrode layer is sprayed in the next step;
s6, preparing an electrode layer spraying and shielding jig, wherein the design of the shielding jig is as follows:
6-1, two sets of jigs are arranged and are respectively used on the first electrode layer and the second electrode layer;
6-2, each set of shielding jig is divided into a plurality of pieces, the hollowed parts of the two sets of shielding jigs are combined together and are consistent with the distribution of the electrode wires in the electrode layer I or the electrode layer II, the hollowed parts in the two sets of shielding jigs are the width of the electrode wires, and the gap between the adjacent hollowed parts is not less than 2 mm;
6-3, the shielding jig is made of stainless steel;
s7, attaching a plurality of shielding jigs on the first insulating layer one by one through heat-resistant double-sided adhesive tapes, forming a first electrode layer and a second electrode layer at the hollow parts of the shielding jigs by a plasma spraying method, wherein the materials for spraying the first electrode layer and the second electrode layer are 99.99% tungsten powder, after spraying, the thicknesses of the first electrode layer and the second electrode layer are 30-100 micrometers, and the resistance value between the point feeding rod and the electrode layer is less than 10 omega;
s8: according to the step of S4, spraying metal on the surface of the electrode layer to form a second insulating layer, wherein the spraying thickness is 300-600 microns, and a margin of 100 microns is reserved for subsequent fine machining;
s9: and finally, carrying out finish machining, grinding and polishing on the electrostatic chuck, and machining the electrostatic chuck to the required size, flatness and roughness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111398828.3A CN114121766A (en) | 2021-11-19 | 2021-11-19 | Bipolar electrostatic chuck for pan-semiconductor manufacturing equipment and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111398828.3A CN114121766A (en) | 2021-11-19 | 2021-11-19 | Bipolar electrostatic chuck for pan-semiconductor manufacturing equipment and manufacturing method thereof |
Publications (1)
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114632680A (en) * | 2022-03-11 | 2022-06-17 | 重庆臻宝实业有限公司 | Method for forming coating of helium hole of upper electrode |
| CN114649252A (en) * | 2022-03-17 | 2022-06-21 | 苏州众芯联电子材料有限公司 | Manufacturing process of double-electrode electrostatic chuck for LCD/OLED panel equipment |
| CN114959547A (en) * | 2022-05-30 | 2022-08-30 | 苏州众芯联电子材料有限公司 | Process for increasing the compactness of a dielectric layer of an electrostatic chuck, process for manufacturing an electrostatic chuck, electrostatic chuck |
| CN116262666A (en) * | 2022-12-29 | 2023-06-16 | 浙江省冶金研究院有限公司 | Preparation method of aluminum nitride-based ceramic composite material and application of aluminum nitride-based ceramic composite material to electrostatic chuck |
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2021
- 2021-11-19 CN CN202111398828.3A patent/CN114121766A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114632680A (en) * | 2022-03-11 | 2022-06-17 | 重庆臻宝实业有限公司 | Method for forming coating of helium hole of upper electrode |
| CN114632680B (en) * | 2022-03-11 | 2023-01-24 | 重庆臻宝实业有限公司 | Method for forming coating of helium hole of upper electrode |
| CN114649252A (en) * | 2022-03-17 | 2022-06-21 | 苏州众芯联电子材料有限公司 | Manufacturing process of double-electrode electrostatic chuck for LCD/OLED panel equipment |
| CN114959547A (en) * | 2022-05-30 | 2022-08-30 | 苏州众芯联电子材料有限公司 | Process for increasing the compactness of a dielectric layer of an electrostatic chuck, process for manufacturing an electrostatic chuck, electrostatic chuck |
| CN116262666A (en) * | 2022-12-29 | 2023-06-16 | 浙江省冶金研究院有限公司 | Preparation method of aluminum nitride-based ceramic composite material and application of aluminum nitride-based ceramic composite material to electrostatic chuck |
| CN116262666B (en) * | 2022-12-29 | 2024-05-17 | 浙江省冶金研究院有限公司 | Preparation method of aluminum nitride-based ceramic composite material and application of aluminum nitride-based ceramic composite material to electrostatic chuck |
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