CN216354159U - Packaging structure of radio frequency module and communication device - Google Patents

Packaging structure of radio frequency module and communication device Download PDF

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Publication number
CN216354159U
CN216354159U CN202122797209.3U CN202122797209U CN216354159U CN 216354159 U CN216354159 U CN 216354159U CN 202122797209 U CN202122797209 U CN 202122797209U CN 216354159 U CN216354159 U CN 216354159U
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China
Prior art keywords
radio frequency
substrate
layer
frequency module
heat dissipation
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Active
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CN202122797209.3U
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Chinese (zh)
Inventor
潘益军
王鑫
宋驭超
王亮
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Maxscend Microelectronics Co ltd
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Maxscend Microelectronics Co ltd
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Priority to CN202122797209.3U priority Critical patent/CN216354159U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip

Abstract

The utility model discloses a packaging structure of a radio frequency module and a communication device. The packaging structure comprises: a substrate; the radio frequency module is positioned on the surface of the substrate; the plastic packaging layer is positioned on the surface of the substrate and arranged around the radio frequency module; the radiating layer covers the surface of the radio frequency module far away from the substrate, and the radiating layer covers the surface of the plastic packaging layer far away from the substrate. According to the technical scheme of the embodiment of the utility model, the packaging structure of thinning the plastic packaging layer on the chip crystal back in the radio frequency module and sputtering the heat dissipation layer on the exposed chip crystal back is designed, and the chip crystal back is directly contacted with the heat dissipation layer, so that the purpose of enhancing heat dissipation is achieved, and the effect of reducing the thickness of the chip is realized.

Description

Packaging structure of radio frequency module and communication device
Technical Field
The embodiment of the utility model relates to the technical field of semiconductors, in particular to a packaging structure of a radio frequency module and a communication device.
Background
With the development of the chip industry, the requirement on the integration level of chips in the market is higher and higher at present, and the radio frequency module can integrate various radio frequency devices, including high-power devices such as a power amplifier, a duplexer, a transmitting end filter and the like, so that the requirement on the heat dissipation performance of the radio frequency module is high.
In the prior art, the heat dissipation function is achieved by increasing the area occupation ratio of the substrate copper sheet and replacing the high heat dissipation type plastic package material, but the method has limited help for heat dissipation of a high-power chip, and the high heat dissipation type plastic package material has higher cost.
Therefore, the problem to be solved urgently in the industry is to enhance the heat dissipation performance of the radio frequency module integrated with various radio frequency devices.
SUMMERY OF THE UTILITY MODEL
The utility model provides a packaging structure of a radio frequency module and a communication device, which are used for enhancing the heat dissipation function of the radio frequency device in the radio frequency module.
In a first aspect, an embodiment of the present invention provides a package structure of a radio frequency module, including:
a substrate;
the radio frequency module is positioned on the surface of the substrate;
the plastic packaging layer is positioned on the surface of the substrate and arranged around the radio frequency module;
the radiating layer covers the surface of the radio frequency module far away from the substrate, and the radiating layer covers the surface of the plastic packaging layer far away from the substrate.
Optionally, the radio frequency module includes at least two chips, where the chips include a power amplification chip and at least one of a filter chip, a duplexer chip and a multiplexer chip;
and plastic packaging layers are arranged between the adjacent chips at intervals.
Optionally, the surface of the radio frequency module away from the substrate is flush with the surface of the plastic package layer away from the substrate.
Optionally, the heat dissipation layer extends to a side surface of the package structure of the radio frequency module.
Optionally, the heat dissipation layer includes a conductive heat dissipation layer, and the heat dissipation layer is connected to the ground terminal.
Optionally, the ground terminal is disposed on a side surface of the substrate.
Optionally, the substrate includes a conductive interconnection circuit layer therein;
the surface of the substrate is provided with a conductive bump;
the conductive interconnection circuit is connected with the conductive bump;
the radio frequency module is positioned on the surface of the conductive bump far away from the substrate, and the signal output end of the radio frequency module is connected with the conductive bump.
Optionally, the packaging structure of the radio frequency module comprises a solder mask layer, the solder mask layer is provided with an opening structure, and the opening structure exposes the conductive bump.
Optionally, the substrate comprises a printed circuit board.
In a second aspect, an embodiment of the present invention further provides a communication device, where the communication device includes the package structure of the radio frequency module described in any of the first aspects.
According to the technical scheme of the embodiment of the utility model, the radio frequency module arranged on the organic substrate is packaged by using the plastic package layer, the plastic package layer on the surface of the radio frequency module is processed, and then the surface far away from the substrate is sputtered with the heat dissipation metal layer, so that partial area of the heat dissipation metal layer is directly contacted with the surface of the radio frequency module far away from the substrate, the heat dissipation function of the radio frequency module is enhanced, the size of the device package is increased slightly, and the effect of chip miniaturization is realized.
Drawings
Fig. 1 is a schematic structural diagram of a radio frequency module package structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another radio frequency module package structure according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another radio frequency module package structure according to an embodiment of the present invention;
fig. 4 is a flowchart of a method for manufacturing a radio frequency module package structure according to an embodiment of the present invention;
fig. 5 is a flowchart of a method for manufacturing a radio frequency module package structure according to another embodiment of the present invention;
fig. 6-13 are flow charts corresponding to steps of a method for manufacturing a radio frequency module package structure according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the utility model and are not limiting of the utility model. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The embodiment of the utility model provides a packaging structure of a radio frequency module. Fig. 1 is a schematic structural diagram of a radio frequency module package structure according to an embodiment of the present invention. As shown in fig. 1, the package structure of the rf module includes: the antenna comprises a substrate 101, at least one radio frequency module 102, a plastic package layer 103 and a heat dissipation layer 104.
The substrate 101 is a basic material of a Printed Circuit Board (PCB), and may include an organic substrate such as a resin substrate, and is a support for electronic components and a carrier for electrical connection. The substrate 101 may include a printed circuit board, on which a metal wiring layer is printed, and is selectively processed by hole processing, electroless copper plating, electro-coppering, etching, etc. to obtain a desired circuit pattern and form a certain circuit connection relationship, and the substrate 101 is used to support each chip disposed thereon and make conduction between the chips.
The package structure includes at least one rf module 102 disposed on a surface of a substrate 101. The radio frequency module is a structure which integrates discrete devices with different functions into one module so as to improve the integration level and performance and miniaturize the volume. The rf module 102 includes at least two chips, which may include at least one of a filter chip, a duplexer chip and a multiplexer chip, and a power amplifier chip. The chip with the filtering function can include a filter chip, a duplexer chip and a multiplexer chip, the chip substrate is generally lithium tantalate and lithium niobate, and the chip with the filtering function can effectively filter signals with specific frequencies or frequencies except for certain signal frequencies to obtain an electric signal with a certain specific frequency eliminated or obtain an electric signal with a certain frequency. And the substrate of the power amplification chip is generally gallium arsenide (GaAs) for amplifying the electrical signal. Since the rf module 102 may include chips with different functions, the rf module 102 has functions of selectively filtering and amplifying the frequency of the electrical signal.
The package structure further includes a molding layer 103 disposed on the surface of the substrate 101 and surrounding the rf module 102. The Molding Compound forming the Molding layer 103 may include Epoxy resin film plastic (EMC), which is extruded into the mold cavity by a transfer Molding method, embedded around the rf module 102, and cross-linked, cured and molded to obtain a device with a certain structural shape. In the plastic packaging process, a plastic packaging material is filled into the entire surface of the substrate 101 to wrap the rf module 102, so that the back of the chip of the rf module 102 and the space between adjacent chips are covered with the plastic packaging layer 103. The molding layer 103 has the functions of placing, fixing, sealing and protecting the chip.
The package structure further includes a heat dissipation layer 104, in order to enhance the heat dissipation performance of the rf module 102, the heat dissipation layer 104 may be a metal layer, and a uniform and large-area metal heat dissipation layer with a thickness of about 3 to 5 μm is formed by sputtering. In the embodiment of the utility model, the sputtering metal used for sputtering the metal heat dissipation layer is a mixed metal layer of stainless steel and copper. The heat dissipation layer 104 covers the surface of the rf module 102 away from the substrate 101, and the heat dissipation layer 104 covers the surface of the molding layer 103 away from the substrate 101. The plastic package layer 103 on the radio frequency module 102 is processed, so that the heat dissipation layer 104 is directly contacted with the radio frequency module 102, and the effect of enhancing the heat dissipation performance of the radio frequency module is realized.
The technical scheme of this embodiment encapsulates the radio frequency module that sets up on the organic matter base plate through utilizing the plastic envelope layer to handle the plastic envelope layer on radio frequency module surface, later sputter the heat dissipation metal level of one deck in the surface of keeping away from the base plate, make the partial region of heat dissipation metal level and the surface direct contact that the base plate was kept away from to the radio frequency module, thereby strengthened the heat dissipation function of radio frequency module, and the size increase of device encapsulation is very little, has realized the miniaturized effect of chip.
Optionally, on the basis of the foregoing embodiment, with continued reference to fig. 1, in the packaging structure of the rf module, the surface of the rf module 102 away from the substrate 101 is flush with the surface of the molding layer 103 away from the substrate 101.
Specifically, on the substrate 101 attached with the radio frequency module 102, an epoxy resin film or a plastic package material is used to perform a plastic package process around the radio frequency module 102, so as to embed the radio frequency module 102, thereby completing the plastic package protection of the chip in the radio frequency module 102. In the embodiment of the utility model, to enhance the heat dissipation performance of the chip in the rf module 102, the heat dissipation layer 104 is directly contacted with the back of the chip in the rf module 102. Therefore, a thinning process is used to thin and remove part of the molding layer 103 and the chip substrate. Preferably, the thickness of the general ground-off molding layer may be 100 micrometers, and the thickness of the ground-off chip crystal substrate may be 30 micrometers. In this embodiment, the thickness of the ground plastic package layer can satisfy the requirement that the rf module 102 normally works, and the surface of the rf module 102 away from the substrate 101 is flush with the surface of the plastic package layer 103 away from the substrate 101, and the chip back is exposed, which is not limited herein.
After the radio frequency module 102 after plastic packaging is thinned, the surface of the radio frequency module 102 is flush with the surface of the plastic packaging layer 103 on the side far away from the substrate 101. A mixed metal heat sink layer 104 of stainless steel and copper is then sputtered onto the surface to a thickness of about 3 to 5 microns. The heat dissipation layer 104 is in contact with the chip back of the chip in the radio frequency module 102, so that the heat dissipation function is enhanced, the thickness increase of the device package is small, the goal of chip miniaturization is achieved, and the area of a PCB (printed circuit board) is saved.
Optionally, fig. 2 is a schematic structural diagram of another radio frequency module package structure according to an embodiment of the present invention. Based on the above embodiment, referring to fig. 2, in the package structure of the rf module, the heat dissipation layer 104 extends to the side of the package structure of the rf module 102.
Specifically, after the radio frequency modules 102 on the complete substrate 101 are subjected to a plastic package process to complete packaging, and the surfaces of the radio frequency modules 102 far away from the substrate 101 are thinned to be flush with the surface of the plastic package layer 103, sputtering of the metal heat dissipation layer 104 is performed on the surface of the whole structure by using a sputtering process, and the obtained chip packaging structure is only provided with the metal heat dissipation layer 104 on the upper surface and used for enhancing the heat dissipation performance of the chip. To further enhance the heat dissipation, after each rf module 102 is packaged and protected and thinned until the surface of the rf module 102 is flush with the surface of the plastic package layer 103, the whole package structure is cut into single modules in a certain size, and then each single module is sputtered with the metal heat dissipation layer 104. At this time, besides sputtering a layer of mixed metal heat dissipation layer of stainless steel and copper on the surface of the molding compound layer 103 and the chip back, a layer of metal heat dissipation layer can be sputtered on the side surface of the package structure to cover the side surface of the molding compound layer 103 and the surface of the substrate 101. Therefore, the area of the heat dissipation layer is increased, and the heat dissipation performance of the radio frequency module packaging structure is further enhanced.
Optionally, on the basis of the foregoing embodiment, in the package structure of the radio frequency module, the heat dissipation layer 104 includes a conductive heat dissipation layer, and the heat dissipation layer 104 is connected to the ground terminal.
Specifically, the heat dissipation layer 104 sputtered in the package structure includes a conductive heat dissipation layer, which can be electrically connected to a ground terminal, and is beneficial to grounding the rf module 102, so that the heat dissipation layer 104 can form an electromagnetic shielding layer while enhancing heat dissipation of the rf module 102, and can be used for electromagnetically shielding signals of other surrounding rf modules, thereby reducing stray radiation in the package structure to the maximum extent and reducing electromagnetic interference between adjacent devices to the maximum extent.
In addition to the above embodiments, the ground terminal is provided on the side surface of the substrate 101. After the packaged and thinned complete substrate 101 is cut into single modules with a certain size, a mixed metal heat dissipation layer is sputtered, and the heat dissipation layer 104 can be sputtered on the side surface of the substrate 101. If the ground terminal is disposed on the side of the substrate 101, the heat dissipation layer 104 can be directly electrically connected to the ground terminal, which is equivalent to disposing a grounded metal housing outside the encapsulated rf module 102 for shielding the electromagnetic signal interference between adjacent devices. The heat dissipation layer 104 extending to the side of the substrate 101 and electrically connected to the ground can shield electromagnetic signals while enhancing the heat dissipation function of the rf module, thereby saving the processing and assembly costs of additional special shielding components.
Optionally, fig. 3 is a schematic structural diagram of another radio frequency module package structure according to an embodiment of the present invention. On the basis of the above embodiments, referring to fig. 3, in the package structure of the rf module, the substrate 101 includes a conductive interconnection line layer 105 therein, the surface of the substrate 101 is provided with a conductive bump 106, and the conductive interconnection line layer 105 is connected to the conductive bump 106.
The rf module 102 is disposed on the surface of the conductive bump 106 away from the substrate 101, and a signal output terminal of the rf module 102 is connected to the conductive bump 106.
Specifically, the substrate 101 has a conductive interconnection layer 105 with a certain pattern layout inside, which is used for conducting the chips according to the circuit traces printed on the substrate 101. Wherein the conductive interconnect line layer 105 may be a copper line.
The surface of the substrate 101 is further provided with a conductive bump 106, and the conductive bump 106 may be a solder ball formed by melting solder, and is electrically connected to the conductive interconnection circuit layer 105.
The chips in the rf module 102 are fixed on the surface of the conductive bump 106 away from the substrate 101, and are used for attaching the chips in the rf module 102 to the substrate 101. The conductive bump 106 connects the signal output end of the chip with the conductive interconnection line layer 105, so that the chip is in signal conduction with the conductive interconnection line layer 105, and the connection and conduction between the chips are realized through the conductive interconnection line layer 105 and the conductive bump 106.
Optionally, on the basis of the above embodiment, with continued reference to fig. 3, the package structure of the radio frequency module further includes a solder resist layer 107, where the solder resist layer 107 is provided with an opening structure, and the opening structure exposes the conductive bump 106.
Specifically, the solder resist layer 107 is located between the substrate 101 and the molding layer 103 for protecting the conductive interconnection line layer 105 in the substrate 101 from air oxidation. In addition, the opening structure provided on the solder resist layer 107 is used for providing the conductive bump 106, and when the conductive bump 106 is spot-welded and each chip in the rf module 102 is mounted, the solder resist layer 107 can fix the formed conductive bump 106, so as to prevent the melted solder from dispersing everywhere in the process of forming the conductive bump 106, which may cause the erroneous connection of the conductive interconnection circuit.
The embodiment of the utility model also provides a communication device, which comprises the packaging structure of the radio frequency module, and has the same beneficial effects.
The embodiment of the utility model also provides a preparation method of the packaging structure of the radio frequency module. Referring to fig. 4, the method includes the steps of:
and S110, providing a substrate.
Referring to fig. 6, a substrate 101 is provided, and the substrate 101 may include a resin substrate or other organic substrate for carrying electronic components.
S120, forming at least one radio frequency module on the surface of the substrate.
Referring to fig. 7, at least one rf module 102 is attached to a surface of a substrate 101, and the rf module 102 includes at least two chips.
S130, forming a plastic package layer on the surface of the substrate, wherein the plastic package layer is arranged around the radio frequency module.
Referring to fig. 8, a molding layer 103 is disposed on the surface of the substrate 101 around the rf module 102, and the molding layer 103 may be an epoxy film or other molding compound.
And S140, forming a heat dissipation layer, wherein the heat dissipation layer covers the surface of the radio frequency module, which is far away from the substrate, and the heat dissipation layer covers the surface of the plastic package layer, which is far away from the substrate.
Referring to fig. 12, a heat dissipation layer 104 is formed on a surface of the substrate 101, covering a die back of the chip in the rf module 102 and the molding layer 103.
Optionally, referring to fig. 5, in the preparation method of the radio frequency module package structure provided in the embodiment of the present invention, S130 is to form a plastic sealing layer on the surface of the substrate, where the color sealing layer is disposed around the radio frequency module and includes:
and S1301, forming a plastic packaging layer on the surface of the substrate.
Referring to fig. 8, a molding layer 103 is formed around the rf module 102, and the rf module 102 is completely embedded in the molding layer 103.
S1302, thinning the plastic package layer to expose the radio frequency module.
Referring to fig. 9, the molding layer 103 is ground to thin the molding layer 103, and the back of each chip in the rf module 102 is exposed, so that the surface of the molding layer 103 is flush with the surface of the back of the chip.
Optionally, with continued reference to fig. 5, S140, forming a heat dissipation layer, where the heat dissipation layer covers the surface of the radio frequency module away from the substrate, and the heat dissipation layer covers the surface of the plastic package layer away from the substrate includes:
s1401, the substrate is cut to form a single module.
Referring to fig. 10 and 11, a package structure of a complete substrate 101 may be cut into a plurality of single modules according to a certain size.
S1402, forming a heat dissipation layer, wherein the heat dissipation layer covers the surface of the radio frequency module, which is far away from the substrate, and covers the surface of the plastic packaging layer, which is far away from the substrate, and the heat dissipation layer covers the side surface of the packaging structure.
Referring to fig. 13, a mixed metal layer of stainless steel and copper is sputtered on the surface of the single module on the side away from the substrate 101 to form a heat dissipation layer 104. The heat dissipation layer 104 may cover the surface of the molding layer 103 away from the substrate 101, or may cover the side surface of the package structure, thereby playing a role of electromagnetic shielding.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the utility model. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (10)

1. A packaging structure of a radio frequency module is characterized by comprising:
a substrate;
the radio frequency module is positioned on the surface of the substrate;
the plastic packaging layer is positioned on the surface of the substrate and arranged around the radio frequency module;
the heat dissipation layer covers the surface of the base plate far away from the radio frequency module, and the heat dissipation layer covers the surface of the base plate far away from the plastic package layer.
2. The package structure of the radio frequency module according to claim 1, wherein the radio frequency module comprises at least two chips, the chips comprising a power amplification chip and at least one of a filter chip, a duplexer chip and a multiplexer chip;
the plastic packaging layer is arranged between the adjacent chips at intervals.
3. The package structure of claim 1, wherein the package structure of the RF module,
the surface of the radio frequency module, which is far away from the substrate, is flush with the surface of the plastic package layer, which is far away from the substrate.
4. The package structure of claim 1, wherein the package structure of the RF module,
the heat dissipation layer extends to the side face of the packaging structure of the radio frequency module.
5. The package structure of the rf module of claim 1 or 4, wherein the heat dissipation layer comprises a conductive heat dissipation layer, and the heat dissipation layer is connected to a ground terminal.
6. The package structure of claim 5, wherein the ground terminal is disposed on a side surface of the substrate.
7. The package structure of a radio frequency module according to claim 1, wherein the substrate includes a conductive interconnect layer therein;
the surface of the substrate is provided with a conductive bump;
the conductive interconnection circuit layer is connected with the conductive bump;
the radio frequency module is located on the surface of the conductive bump far away from the substrate, and a signal output end of the radio frequency module is connected with the conductive bump.
8. The package structure of the radio frequency module according to claim 7, further comprising a solder resist layer, wherein the solder resist layer is provided with an opening structure, and the opening structure exposes the conductive bump.
9. The package structure of claim 1, wherein the substrate comprises a printed circuit board.
10. A communication device comprising the package structure of the rf module of any one of claims 1-9.
CN202122797209.3U 2021-11-15 2021-11-15 Packaging structure of radio frequency module and communication device Active CN216354159U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122797209.3U CN216354159U (en) 2021-11-15 2021-11-15 Packaging structure of radio frequency module and communication device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122797209.3U CN216354159U (en) 2021-11-15 2021-11-15 Packaging structure of radio frequency module and communication device

Publications (1)

Publication Number Publication Date
CN216354159U true CN216354159U (en) 2022-04-19

Family

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Family Applications (1)

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Country Status (1)

Country Link
CN (1) CN216354159U (en)

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