CN216262410U

CN216262410U - Ultrasonic cleaning device for cleaning surface of semiconductor

Info

Publication number: CN216262410U
Application number: CN202122789301.5U
Authority: CN
Inventors: 邱平
Original assignee: Dongguan Jiayuanda Technology Co ltd
Current assignee: Dongguan Jiayuanda Technology Co ltd
Priority date: 2021-11-15
Filing date: 2021-11-15
Publication date: 2022-04-12
Anticipated expiration: 2031-11-15

Abstract

The utility model provides a be used for clear ultrasonic cleaning device in semiconductor surface, wades ultrasonic cleaning device technical field, solves the poor technique of current device cleaning performance not enough, and technical scheme includes: the shell is internally provided with a transduction cavity, an injection cavity and a liquid distribution cavity which are vertically isolated through a transduction layer. The spraying cavity is of a V-shaped structure, and the lower opening of the spraying cavity forms a nozzle. The liquid distribution cavity is of a nearly inverted V-shaped structure, one wide side of the liquid distribution cavity is communicated with a liquid injection pipeline, and the other narrow side of the liquid distribution cavity is of an arc-shaped upward-throwing structure and is communicated with the upper part of the injection cavity. The energy conversion layer comprises a piezoelectric ceramic piece and is connected with an ultrasonic wave or megasonic wave generator through a radio frequency line. The utility model has the beneficial effects that: the liquid distribution cavity is used for accelerating the pumped cleaning liquid for the first time and throwing the cleaning liquid upwards to the bottom of the energy conversion layer, then the piezoelectric ceramic sheet drives the energy conversion layer to vibrate to accelerate the cleaning liquid for the second time and enable the cleaning liquid to vibrate downwards violently, and finally the jet cavity accelerates the violently vibrated cleaning liquid for the third time and then ejects the cleaning liquid at a high speed through the nozzle, so that the cleaning effect is better.

Description

Ultrasonic cleaning device for cleaning surface of semiconductor

Technical Field

The utility model relates to the technical field of ultrasonic cleaning devices, in particular to an ultrasonic cleaning device which can be suitable for cleaning the surface of a semiconductor.

Background

With the rapid development of semiconductor technology, the feature size of the patterns on the semiconductor devices has entered the submicron stage, and the size of the contaminant particles attached to the semiconductor devices in each process flow of the production and manufacture, which may cause the microcircuits to fail or be damaged, is also extremely small, and a semiconductor cleaning device must be provided in each process flow to remove the surface impurities. Most of the existing production enterprises adopt an ultrasonic cleaning device to clean semiconductor devices, the existing ultrasonic cleaning device utilizes an ultrasonic generator to send out a high-frequency alternating current signal with ultrasonic or megasonic frequency and transmits the signal to an ultrasonic transducer through a radio frequency line so as to convert the high-frequency alternating current signal into high-frequency mechanical vibration of a piezoelectric component, so that the high-frequency vibration of the piezoelectric component of the ultrasonic transducer drives chemical cleaning agents such as ID water and the like pumped into a cavity of the cleaning device to vibrate violently, and the pumping pressure of the semiconductor cleaning fluid and the driving force of the ultrasonic transducer are utilized to spray the cleaning fluid through a nozzle so as to clean the surface of the semiconductor.

However, the structural design of each cavity in the existing ultrasonic cleaning device is not enough, the semiconductor cleaning liquid can only be sprayed under the pumping pressure and the vibration driving force of the ultrasonic transducer, the structure of each cavity cannot be fully utilized to carry out staged gradual acceleration on the cleaning liquid, the speed of the fluid of the sprayed cleaning liquid is low, the kinetic energy is low, the ultrafine pollutant particles deposited on the surface of a semiconductor device are difficult to completely clear in the actual use process, and the cleaning effect is not good.

Accordingly, there is a need for improvements in existing ultrasonic cleaning devices to overcome the above-mentioned problems.

SUMMERY OF THE UTILITY MODEL

In summary, the present invention is directed to solve the technical deficiencies of the conventional ultrasonic cleaning apparatus, such as unreasonable structural design, poor cleaning effect, and inability to thoroughly remove the contaminant particles on the surface of the semiconductor device, and provides an ultrasonic cleaning apparatus capable of performing multiple step-by-step speed-up on the pumped semiconductor cleaning liquid by means of the structural design of its internal cavity to eject high-speed and high-energy cleaning liquid fluid.

In order to solve the technical defects provided by the utility model, the technical scheme is as follows:

an ultrasonic cleaning device for cleaning the surface of a semiconductor comprises a shell, and is characterized in that: the shell is internally and longitudinally provided with an energy conversion cavity and an injection cavity which are sealed and isolated from each other up and down through an energy conversion layer, and a liquid distribution cavity which is positioned on one side of the upper part of the injection cavity and communicated with the injection cavity; the jet cavity is of a V-shaped structure with a wide upper part and a narrow lower part, the upper part of the jet cavity is used for communicating an opening of the transduction cavity and is blocked by the transduction layer, and the opening of the lower part of the jet cavity is positioned at the bottom of the shell to form a nozzle which is correspondingly positioned right below the transduction layer; the liquid distribution cavity is of a nearly inverted V-shaped structure with one wide side and one narrow side, the upper part of the relatively wide side of the liquid distribution cavity is communicated with a plurality of liquid injection pipelines for pumping semiconductor cleaning liquid into the containing cavity, and the relatively narrow side of the liquid distribution cavity is of an arc-shaped upward throwing structure and is communicated with the upper part of the injection cavity for uniformly and rapidly throwing the semiconductor cleaning liquid to the bottom of the energy conversion layer; the energy conversion layer comprises at least one piezoelectric ceramic piece which is longitudinally arranged, a plurality of radio frequency lines which are respectively connected between the piezoelectric ceramic piece and the ultrasonic wave or megasonic wave generator are distributed in the energy conversion cavity and used for transmitting high-frequency alternating current electric energy generated by the ultrasonic wave or megasonic wave generator to the piezoelectric ceramic piece to drive the energy conversion layer to vibrate at the same frequency, and the semiconductor cleaning liquid is driven by the energy conversion layer to vibrate in the jet cavity and be jetted out through the nozzle.

Furthermore, the side edge of the bottom in the transduction cavity is longitudinally provided with a limit step which surrounds the long ring structure outside the transduction layer, and the transduction layer is longitudinally sealed and tightly propped against the bottom of the transduction cavity through a pressing mechanism fixedly connected to the limit step so as to seal an opening which is communicated with the upper part of the jet cavity.

Furthermore, the pressing mechanism comprises a pressing frame and a fixing frame which are of a long ring structure, the pressing frame is embedded in the limiting step, and the bottom of the inner wall of the pressing mechanism is annularly provided with a concave limiting groove for limiting the side edge of the piezoelectric ceramic plate; the fixing frame is embedded in the inner wall of the energy conversion cavity, the inner wall of the fixing frame is matched with the inner wall of the abutting-pressing frame up and down to form a wiring cavity for containing the radio-frequency wire, and the fixing frame is fixedly connected to the limiting step to limit and fix the energy conversion layer through the abutting-pressing frame.

Furthermore, the transduction layer also comprises a titanium alloy sheet, the piezoelectric ceramic sheets are longitudinally arranged on the upper surface of the titanium alloy sheet, and the titanium alloy sheet is longitudinally and hermetically covered on an opening of the transduction cavity communicated with the injection cavity.

Furthermore, a Teflon sealing ring A is hermetically clamped between the edge of the lower bottom surface of the titanium alloy sheet and the bottom surface of the transduction cavity.

Furthermore, a buffer cavity which is arranged at the other side of the upper part of the spraying cavity and is communicated with the other side of the upper part of the spraying cavity is longitudinally arranged in the shell, and the opening position of the bottom surface at the communication position of the buffer cavity and the other side wall of the spraying cavity is lower than the opening position at the communication position of the liquid distribution cavity and the side wall of the spraying cavity.

Further, one side of casing is equipped with liquid level detection device, liquid level detection device including drainage portion and photoelectric sensor, be equipped with the stock solution chamber in the drainage portion, the stock solution chamber through a vertical drainage pipe who sets up with spray the chamber intercommunication, photoelectric sensor set firmly in drainage portion and with ultrasonic wave or megasonic generator's control module electric connection, its sensing probe one end stretches into the stock solution intracavity for whether the sensing sprays the intracavity to have the semiconductor washing liquid and to control module send liquid level sensing signal.

Further, the casing including sealed fixed connection last casing as an organic whole and lower casing, the vertical equipartition of notes liquid pipeline in go up one side of casing and run through terminal surface about it, the transduction chamber correspond vertically to set up in the other one side of last casing and run through terminal surface about it, the lower terminal surface middle part of going up the casing constitutes spray the chamber with the upper portion profile in liquid distribution chamber, the corresponding lower part profile that constitutes spray chamber and liquid distribution chamber in the middle part of the up end of casing down, sealed fixed clamp has teflon sealing washer B between the up end edge of the lower terminal surface edge of going up the casing and the lower casing.

Furthermore, the upper shell is fixedly connected with a sealing plate for sealing the opening at the upper part of the transduction cavity, and a Teflon sealing ring C is hermetically clamped between the sealing plate and the upper shell.

Furthermore, a plurality of quick-release connectors of the liquid injection pipe which are fixedly connected with the opening at the upper part of the liquid injection pipeline through threads are longitudinally arranged on one side of the upper end surface of the upper shell, and a plurality of cable plug connectors which are used for extending out and locking and fixing the radio frequency cable are longitudinally arranged on the other side of the upper end surface of the upper shell.

The utility model has the beneficial effects that:

1. the cleaning liquid is pumped into the liquid distribution cavity from top to bottom through the liquid injection pipelines and then evenly distributed to one side of the injection cavity under the limit of the cavity of the liquid distribution cavity, the evenly distributed cleaning liquid then floods into the gradually narrowed cavity of the arc-shaped upward-throwing-shaped structure of the liquid distribution cavity, and is accelerated to be sprayed into the injection cavity under the guide of the limit of the cavity in an upward radian posture and correspondingly thrown onto the lower surface of the energy conversion layer. After the cleaning liquid is accelerated to be thrown onto the bottom surface of the energy conversion layer for the first time, the cleaning liquid is driven by the high-frequency mechanical vibration of the piezoelectric ceramic sheet to vibrate violently and is accelerated to be sprayed to the lower part of the spraying cavity for the second time, because the spraying cavity is in a V-shaped structure with a wide upper part and a narrow lower part, the semiconductor cleaning liquid entering the lower part of the spray cavity after high-frequency oscillation is accelerated for the third time and is finally sprayed out through the spray nozzle just opposite to the lower part of the energy conversion layer, compared with the existing common ultrasonic cleaning device, the device provided by the utility model has the advantages that under the condition that the ultrasonic or megasonic generator operates at the same working frequency, the ejected semiconductor cleaning liquid has higher flow rate and energy, the surface cleaning effect on the semiconductor device is better under the same energy consumption, and the surface of the semiconductor device can be thoroughly cleaned.

2. The utility model adopts the piezoelectric ceramic plate as an energy conversion part to convert the high-frequency alternating current electric energy generated by the ultrasonic wave or megasonic wave generator into mechanical energy, has high sensitivity, good frequency stability, wide application range, small volume, no moisture absorption, strong anti-interference capability and long service life, and ensures the stability and reliability of ultrasonic cleaning of the device.

Drawings

FIG. 1 is a schematic view of the overall structure of the apparatus of the present invention;

FIG. 2 is a schematic bottom structure of the apparatus of the present invention;

FIG. 3 is a schematic cross-sectional view of the apparatus of the present invention;

FIG. 4 is a partially enlarged schematic view of the cross-sectional structure of the apparatus of the present invention;

FIG. 5 is an exploded view of the apparatus of the present invention;

FIG. 6 is a schematic view of the liquid level detection device and the longitudinal cross-section of the housing according to the present invention.

In the figure: 1. the liquid level detection device comprises a shell, 11, a liquid level detection device, 111, a drainage part, 112, a photoelectric sensor, 113, a liquid storage cavity, 114, a drainage pipeline, 12, an upper shell, 13, a lower shell, 14, a Teflon sealing ring B, 15, a sealing plate, 16, a Teflon sealing ring C, 17, a liquid injection pipe quick-release joint, 18, a cable plug, 2, an energy conversion layer, 21, a piezoelectric ceramic plate, 22, a titanium alloy plate, 23, a Teflon sealing ring A, 3, an energy conversion cavity, 31, a limiting step, 4, an injection cavity, 41, a nozzle, 5, a liquid distribution cavity, 6, a liquid injection pipeline, 7, a megasonic generator, 8, a radio frequency wire, 9, a press-fit mechanism, 91, a press-fit frame, 911, a limiting groove, 92, a fixed frame, 93, 94, a radio frequency wire fixing plate and 10 a buffer cavity.

Detailed Description

The structure of the present invention will be further described with reference to the accompanying drawings and preferred embodiments of the present invention.

Referring to fig. 1 to 3, the present invention:

the utility model provides an ultrasonic cleaning device for semiconductor surface cleaning, is including whole casing 1 that is the cuboid structure, vertically is equipped with through the transduction chamber 3 and the injection chamber 4 of transduction layer 2 upper and lower sealed isolation on the inside right side of this casing 1 is on a parallel with its major axis direction, and is in spray chamber 4 upper portion left side and with the cloth liquid chamber 5 that sprays chamber 4 intercommunication.

Specifically, as shown in fig. 2 and 3, the ejection chamber 4 has a V-shaped structure with a wide top and a narrow bottom, an opening at the upper portion thereof for communicating with the transduction chamber 3 is blocked by the transduction layer 2, and an opening at the lower portion thereof is located at the bottom of the housing 1, thereby forming an elongated nozzle 41 corresponding to the position right below the transduction layer 2.

Specifically, cloth liquid cavity 5 is the narrow structure similar to the type of falling V on the wide right side in left side, and the cavity upper portion of the relative broad in cloth liquid cavity 5 left side arranges the intercommunication along its length direction and has four vertical notes liquid pipelines 6 of seting up on casing 1, in the time of the in-service use through these four notes liquid pipelines 6 with semiconductor washing liquid pump income cloth liquid cavity 5. The relatively narrow cavity on the right side of the liquid distribution cavity 5 is of an arc-shaped upward-throwing structure, the right opening of the arc-shaped upward-throwing structure is arranged on the upper part of the left side wall of the injection cavity 4, and the opening which is gradually gathered and polymerized and is of the arc-shaped upward-throwing structure can uniformly and quickly throw the semiconductor cleaning liquid to the bottom of the energy conversion layer 2 in actual use.

Specifically, referring to fig. 1 and 4, the energy conversion layer 2 includes four piezoelectric ceramic plates 21 arranged in a longitudinal direction, four radio frequency lines 8 electrically connected between the four piezoelectric ceramic plates 21 and the megasonic wave generator 7 are disposed in the energy conversion cavity 3, and the four radio frequency lines 8 preferably adopt high voltage resistant radio frequency lines capable of resisting 3000V high voltage.

In practical use, a liquid injection pump device (not shown in the figure) pumps a semiconductor cleaning liquid (preferably, DI water) into the liquid distribution chamber 5 through the liquid injection pipe (not shown in the figure) and through the four liquid injection pipelines 6 under the pressure of 0.35Mpa, the semiconductor cleaning liquid is simultaneously pumped from four points from top to bottom and then limited by the cavity structure of the liquid distribution chamber 5, so that the cleaning liquid pumped from the four points can be uniformly guided into the right side cavity of the liquid distribution chamber 5 which is gradually gathered and polymerized and has an arc-shaped upward throwing structure, and then the cleaning liquid which is uniformly scattered is accelerated and thrown upward onto the bottom surface of the energy conversion layer 2 under the limitation of the structure of the right side cavity of the liquid distribution chamber 5. Meanwhile, the four radio frequency lines 8 respectively transmit high-frequency alternating current electric energy which is generated by the megasonic generator 7 and has an alternating frequency reaching the megasonic frequency to the four piezoelectric ceramic pieces 21, then the high-frequency alternating current electric energy is converted into mechanical energy by utilizing the electrical and physical characteristics of the piezoelectric ceramic pieces 21 to drive the piezoelectric ceramic pieces to drive the transduction layers 2 to vibrate at the same frequency, then the semiconductor cleaning liquid thrown to the lower bottom surface of the semiconductor cleaning liquid is driven to vibrate violently in the jet cavity 4 by the transduction layers 2 with high-frequency vibration and combining the action of gravity, and is jetted downwards to the lower part of the jet cavity 4 at high speed, and finally the cleaning liquid is jetted at high speed through the nozzle 41 at the bottom of the shell 1 under the limiting guidance of the lower structure of the jet cavity 4 to form high-speed and high-energy semiconductor cleaning liquid flow so as to thoroughly clean the surface of the semiconductor device.

After the technical scheme is adopted, the utility model has the following technical effects.

Firstly, the liquid distribution cavity 5 of the utility model is wide at one side for injecting cleaning liquid and narrow at one side for communicating the injection cavity 4, therefore, the cleaning liquid is pumped into the liquid distribution cavity 5 from top to bottom through the four liquid injection pipelines 6 and then is uniformly distributed towards the right side of the injection cavity 4 under the cavity limit of the liquid distribution cavity 5, then the cleaning liquid which is uniformly distributed is accelerated and injected into the injection cavity 4 for the first time in an upward radian posture under the limit guide of the right side cavity of the liquid distribution cavity 5 which is in an arc-shaped upward throwing structure and is correspondingly injected onto the lower surface of the energy conversion layer 2, then the cleaning liquid is accelerated and injected into the lower part of the injection cavity 4 for the second time under the driving of the high-frequency mechanical vibration of the piezoelectric ceramic plate 21, and finally the cleaning liquid is accelerated and injected out of the nozzle 41 for the third time under the limit guide of the configuration of the injection cavity 4, thereby forming a high-energy multi-stage cleaning liquid jet device which is injected after three-stage acceleration under the limit of each cavity structure, High velocity semiconductor cleaning fluid flow. Compared with the existing common ultrasonic cleaning device, when the megasonic generator 7 runs at the same working frequency, the device disclosed by the utility model has the advantages that the ejected semiconductor cleaning liquid has higher flow speed and higher energy, the surface cleaning effect on the semiconductor device is better under the same energy consumption, and the surface of the semiconductor device can be thoroughly cleaned.

In addition, the utility model adopts the piezoelectric ceramic piece 21 as an energy conversion part to convert the high-frequency alternating current electric energy generated by the megasonic generator 7 into mechanical energy, has high sensitivity, good frequency stability, wide application range, small volume, no moisture absorption, strong anti-interference capability and long service life, and ensures the stability and reliability of ultrasonic cleaning of the device.

Further, referring to fig. 3, the side edge of the bottom in the transduction cavity 3 of the device of the present invention is longitudinally provided with a limit step 31 of a long ring structure surrounding the outer side of the transduction layer 2, and the upper end surface of the limit step 31 is located below the upper opening of the transduction cavity 3 and is higher than the upper end surface of the transduction layer 2. The transduction layer 2 is longitudinally sealed and tightly propped against the bottom of the transduction cavity 3 through a pressing mechanism 9 fixedly connected to the limiting step 31 so as to seal an opening of the transduction cavity 3 communicated with the upper part of the jetting cavity 4.

Further, referring to fig. 4 to 5, the pressing mechanism 9 of the device of the present invention includes a pressing frame 91 and a fixing frame 92, the pressing frame 91 is embedded in the limiting step 31, the upper end surface of the pressing frame is slightly higher than the upper end surface of the limiting step 31, and the bottom of the inner wall of the pressing frame is surrounded by a concave limiting groove 911 for limiting the upper side edge of the piezoelectric ceramic plate 21.

The fixing frame 92 is embedded in the inner wall of the transduction cavity 3, and the inner wall of the fixing frame 92 is vertically matched with the inner wall of the abutting frame 91 to form a wiring cavity 93 for accommodating the radio frequency line 8. During actual assembly, the fixing frame 92 is fastened on the limiting step 31 through screw threads to limit the abutting frame 91 to abut against the bottom of the transduction cavity 3, and the energy conversion layer 2 is limited and fixed at the bottom of the transduction cavity 3 through the abutting frame 91 to hermetically cover an opening of the transduction cavity 3 communicated with the upper part of the injection cavity 4.

Preferably, the abutting frame 91 and the fixing frame 92 of the device are made of food-grade stainless steel materials, the structural strength is high, the energy conversion layer 2 can be effectively limited and fixed in the energy conversion cavity 3, the sealing and isolating effect between the energy conversion cavity 3 and the injection cavity 4 is ensured, and the water-electricity separation effect of the device is better. The stainless steel material has good corrosion resistance, can resist the corrosion of semiconductor cleaning liquid, and can not cause the loosening of the pressing mechanism 9 due to corrosion and other reasons after long-term use, thereby ensuring the fixing reliability and the service life of the transduction layer 2 of the device. In addition, the transduction cavity 3 and the pressing mechanism 9 of the device have simple structures, convenient assembly and high reliability, and the wiring cavity 93 formed in the pressing mechanism 9 is beneficial to the wiring arrangement of the radio frequency line 8, so that the radio frequency line 8 can be arranged at a proper position and wired according to the requirement, and the reliability of the connection between the radio frequency line 8 and the piezoelectric ceramic piece 21 is ensured.

Further, as shown in fig. 4 to 5, since one end of the rf wire 8 is welded to the piezoelectric ceramic plate 21, in order to ensure the connection reliability of the welding position between the two, and to prevent one end of the rf wire 8 from shaking or excessive vibration amplitude due to vibration along with the piezoelectric ceramic plate 21, the fixing frame 92 of the device of the present invention is further fixedly connected with four rf wire fixing plates 94 respectively corresponding to the four piezoelectric ceramic plates 21, and during actual assembly, appropriate follow-up buffer sections are reserved at the ends of the four rf wires 8 welded to the piezoelectric ceramic plates 21, and then the rf wire fixing plates 94 are fixedly connected to corresponding positions by a tie, a binding rope, or other fixing members. In actual use, the end parts of the radio frequency wires 8 can be limited through the four radio frequency wire fixing plates 94, so that the welding spots are prevented from being broken or welded due to excessive throwing, and the reliability and stability of the energy conversion process are guaranteed.

Further, referring to fig. 4 to 5, the transduction layer 2 of the device of the present invention further includes a titanium alloy sheet 22, the titanium alloy sheet 22 is a long strip structure, the length of the titanium alloy sheet is slightly longer than the length of the opening of the bottom of the transduction cavity 3, which is communicated with the ejection cavity 4, and the width of the titanium alloy sheet is matched with the width of the inner wall of the limit step 31 and is larger than the width of each piezoelectric ceramic sheet 21. The four piezoelectric ceramic plates 21 are longitudinally arranged and fixedly bonded on the upper surface of the titanium alloy plate 22, and the titanium alloy plate 22 is longitudinally and hermetically covered on an opening of the energy conversion cavity 3 communicated with the injection cavity 4 under the limit and the pressing of the pressing mechanism 9 during actual assembly.

Further, referring to fig. 4 to 5, in order to ensure the sealing effect of the water-electricity isolation between the transduction chamber 3 and the injection chamber 4, a long teflon sealing ring a23 with a ring-shaped structure is hermetically clamped between the lower bottom surface edge of the titanium alloy sheet 22 and the bottom surface of the transduction chamber 3.

The transduction layer 2 of the device adopts the titanium alloy sheet 22 as a resonance layer, not only can effectively conduct the high-frequency mechanical vibration of the piezoelectric ceramic sheet 21, but also has the excellent physical characteristics of small density, high specific strength and specific rigidity, corrosion resistance, fatigue resistance and the like, has good chemical stability, ensures the water-electricity isolation effect between the transduction cavity 3 and the injection cavity 4 of the device, and has higher reliability. Meanwhile, the device adopts the Teflon material to manufacture the sealing ring to seal the openings of the titanium alloy sheet 22 and the energy conversion cavity 3, which are communicated with the injection cavity 4, so that the sealing effect is good, the absorption degree of the Teflon material to sound waves is low, the loss of sound wave capability in the oscillation starting process is greatly reduced, the energy conversion efficiency of the device is improved, and the energy conversion reliability is higher.

Further, as shown in fig. 3 to 4, a buffer chamber 10 is longitudinally arranged in the housing 1 of the device of the present invention, the buffer chamber 10 is located at the right side of the upper portion of the spray chamber 4 and is communicated with the upper portion of the spray chamber, the buffer chamber 10 is integrally of a rectangular structure with a slightly wide left side opening, the bottom surface opening position of the left side of the buffer chamber 10, which is communicated with the right side wall of the spray chamber 4, is lower than the arc-shaped upward-throwing bottom surface opening position of the liquid distribution chamber 5, which is communicated with the left side wall of the spray chamber 4, the top surface opening position of the left side of the buffer chamber, which is communicated with the right side wall of the spray chamber 4, is the same as the arc-shaped upward-throwing top surface opening position of the liquid distribution chamber 5, which is communicated with the left side wall of the spray chamber 4, and the left side top surface opening position of the left side of the buffer chamber is of a structure inclined towards the inside of the right side so as to facilitate the entry of the semiconductor cleaning liquid.

The buffer cavity 10 arranged in the device is positioned at the right side of the liquid distribution cavity 5 and is communicated with the jet cavity 4, so that ultrasonic cleaning liquid which is driven by vibration of the energy conversion layer 2 to vibrate and vibrate in practical use is limited by the gradually narrowing structure of the lower part of the jet cavity 4 and cannot be jetted out through the nozzle 41 at the first time, and because the position of the bottom opening of the buffer cavity 10 communicated with the jet cavity 4 is lower than that of the opening of the throwing-shaped bottom surface of the liquid distribution cavity 5, the reverse backflow of the cleaning liquid can be prevented, and therefore, part of the cleaning liquid which cannot be timely discharged can be drained is drained into the buffer cavity 10, so that the capacity pressure in the jet cavity 4 is reduced, the excessive cleaning liquid can be effectively prevented from backflushing towards the bottom of the energy conversion layer 2, the upward throwing jet effect of the liquid distribution cavity 5 on the subsequently-entering cleaning liquid is ensured, and the reliability is higher.

Further, referring to fig. 5 to 6, the device of the present invention is further connected with a liquid level detection device 11 at the front end surface position of the right side of the casing 1, the liquid level detection device 11 includes a flow guiding portion 111 of an L-shaped structure and a photoelectric sensor 112, a liquid storage cavity 113 vertically arranged and having an upper portion penetrating through the upper end surface of the flow guiding portion 111 is arranged inside the main body of the flow guiding portion 111 of the L-shaped structure, and the liquid storage cavity 113 is communicated with the spray cavity 4 inside the casing 1 through a flow guiding pipeline 114 longitudinally arranged in the flow guiding portion 111. The photoelectric sensor 112 is fixedly connected to the opening on the upper end surface of the drainage part 111 through vertical threads, and one end of the sensing probe at the lower end of the photoelectric sensor vertically extends into the liquid storage cavity 113. The photoelectric sensor 112 is electrically connected to a control module (not shown in the figure) of the megasonic generator 7, and when the semiconductor cleaning solution is continuously pumped into the casing 1 during actual use, a part of the semiconductor cleaning solution in the injection chamber 4 flows into the liquid storage chamber 113 of the drainage portion 111 through the drainage pipeline 114, and is detected by an inductive probe of the photoelectric sensor 112 in the liquid storage chamber 113, and the photoelectric sensor 112 generates a liquid level sensing signal and sends the liquid level sensing signal to the control module of the megasonic generator 7. When the photoelectric sensor 112 senses that the semiconductor cleaning liquid is continuously pumped in the injection cavity 4 of the shell 1, the control module controls the pricking sound generator to continuously operate so as to continuously vibrate the semiconductor cleaning liquid through the energy conversion layer 2 to drive the semiconductor cleaning liquid to vibrate in a high frequency and violent mode. When the photoelectric sensor 112 senses that no cleaning liquid exists in the spray cavity 4, the control module controls the megasonic generator 7 to stop running in time so as to protect the energy conversion layer 2 and save power consumption, and the energy-saving automatic control of the device can be realized.

Further, referring to fig. 5, the housing 1 of the device of the present invention comprises an upper housing 12 and a lower housing 13 which are fixedly connected into a whole in a sealing manner. The liquid injection pipelines 6 are longitudinally and uniformly arranged on the left side of the upper shell 12, and the liquid injection pipelines 6 vertically penetrate through the upper end face and the lower end face of the upper shell 12. The transduction cavity 3 is longitudinally arranged on the right side of the upper shell 12 and vertically penetrates through the upper end face and the lower end face of the upper shell 12. The middle part of the lower end surface of the upper shell 12 is of an upper concave structure to form the upper profiles of the spraying cavity 4 and the liquid distribution cavity 5, and the middle part of the upper end surface of the lower shell 13 correspondingly forms the lower profiles of the spraying cavity 4 and the liquid distribution cavity 5 of a lower concave structure. A teflon seal ring B14 is sealingly and fixedly clamped between the lower end face edge of the upper shell 12 and the upper end face edge of the lower shell 13.

Further, as shown in fig. 5, a sealing plate 15 for covering the upper opening of the transduction chamber 3 is fixedly connected to the upper case 12 of the apparatus of the present invention by means of a screw, and a teflon seal ring C16 located outside the upper opening of the transduction chamber 3 is sealingly held between the sealing plate 15 and the upper case 12.

Further, referring to fig. 1 and 5, four quick-release connectors 17 of the liquid injection pipes, which are fixedly connected to openings at the upper parts of the four liquid injection pipes 6 by threads, are longitudinally arranged on the left side of the upper end surface of the upper housing 12 of the device, and four cable plugs 18, which are used for respectively extending one ends of the four radio frequency cables 8 out of the housing 1 and locking and fixing the same, are longitudinally arranged on the sealing plate 15 on the right side of the upper end surface of the upper housing 12.

During actual assembly, the upper shell 12 and the lower shell 13 are correspondingly and tightly connected into a whole through screws in a sealing and fastening mode, the sealing plate 15 is fixedly covered on the upper opening of the transduction cavity 3 through the screws, and the upper shell 12 and the lower shell 13 are sealed through a Teflon sealing ring B14. After the fixing, the upper shell 13 and the lower shell 13 are sealed to form a liquid distribution cavity 5 and an injection cavity 4 which are communicated with each other, and the transduction cavity 3 is sealed by a sealing plate 15 and a Teflon sealing ring C16. The shell 1 of the device has the advantages of few structural parts, simple structure, convenience in production and manufacture, simplicity and convenience in assembly and capability of effectively reducing the production cost. And the sealing ring made of the Teflon material has good sealing effect and low absorption degree of sound wave capability, ensures the energy conversion efficiency of the device and has high reliability. Moreover, the transduction cavity 3 is sealed by the sealing plate 15, so that the internal pressing mechanism 9, the transduction layer 2 and the external air are isolated, the contact between each component in the transduction cavity and the external air of the shell 1 is avoided, the oxidation of each metal component in the transduction cavity 3 is avoided or slowed down, the connection between the radio frequency line 8 and the piezoelectric ceramic piece 21 can be protected, and the reliability is higher. In addition, the four quick-release connectors 17 of the liquid injection pipe on the upper shell 12 can quickly plug and pull the liquid injection pipe, so that semiconductor cleaning liquid can be conveniently pumped into the liquid distribution cavity 5 in the shell 1, the cable plug can effectively lock and fix the radio frequency wire 8, the one end of the cable plug, which is positioned in the shell 1, is prevented from being pulled by the main body part of the radio frequency wire 8 positioned outside the shell 1 to be disconnected and separated from the piezoelectric ceramic piece 21, the energy conversion cavity 3 and external air can be effectively isolated, and the reliability is higher.

The above examples are merely for the purpose of clarifying a specific embodiment of the present invention and are not intended to limit the scope of the present invention. For those skilled in the art, it is possible to derive other adjustments or modifications of the ultrasonic or megasonic generator 7, the housing 1, the energy conversion layer 2, the energy conversion chamber 3, the ejection chamber 4, the liquid distribution chamber 5, the nozzle 41, the liquid injection pipe 6, the piezoelectric ceramic plate 21, the rf line 8, etc., or derive other methods of use based on the present invention, which are not listed here. Any modification, replacement or improvement made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.

Claims

1. An ultrasonic cleaning device for cleaning semiconductor surfaces comprises a shell (1), and is characterized in that: a transduction cavity (3) and a spray cavity (4) which are vertically sealed and isolated through a transduction layer (2) and a liquid distribution cavity (5) which is positioned on one side of the upper part of the spray cavity (4) and communicated with the spray cavity are longitudinally arranged in the shell (1); the jet cavity (4) is of a V-shaped structure with a wide upper part and a narrow lower part, the upper part of the jet cavity is used for communicating the opening of the transduction cavity (3) and is blocked by the transduction layer (2), and the lower part of the jet cavity is positioned at the bottom of the shell (1) to form a nozzle (41) which is correspondingly positioned right below the transduction layer (2); the liquid distribution cavity (5) is of a nearly inverted V-shaped structure with one wide side and one narrow side, the upper part of the relatively wide side of the liquid distribution cavity is communicated with a plurality of liquid injection pipelines (6) for pumping semiconductor cleaning liquid into the containing cavity, and the relatively narrow side of the liquid distribution cavity is of an arc-shaped upward throwing structure and is communicated with the upper part of the injection cavity (4) for uniformly and rapidly throwing the semiconductor cleaning liquid to the bottom of the energy conversion layer (2); the energy conversion layer (2) comprises at least one piezoelectric ceramic piece (21) which is longitudinally arranged, a plurality of radio frequency lines (8) which are respectively connected between the piezoelectric ceramic piece (21) and an ultrasonic or megasonic generator are distributed in the energy conversion cavity (3) and are used for transmitting high-frequency alternating current electric energy generated by the ultrasonic or megasonic generator to the piezoelectric ceramic piece (21) to drive the energy conversion layer (2) to vibrate at the same frequency, and a semiconductor cleaning liquid is driven by the energy conversion layer (2) to vibrate in the ejection cavity (4) and be ejected through the nozzle (41).

2. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 1, wherein: the side edge of the bottom in the transduction cavity (3) is longitudinally provided with a limit step (31) which surrounds the long-ring-shaped structure on the outer side of the transduction layer (2), and the transduction layer (2) is longitudinally sealed and tightly propped against the bottom of the transduction cavity (3) through a pressing mechanism (9) fixedly connected to the limit step (31) so as to block an opening communicated with the upper part of the jet cavity (4) and close the transduction cavity (3).

3. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 2, characterized in that: the pressing mechanism (9) comprises a pressing frame (91) and a fixing frame (92) which are of a long ring structure, the pressing frame (91) is embedded in the limiting step (31), and the bottom of the inner wall of the pressing mechanism is annularly provided with a concave limiting groove (911) for limiting the side edge of the piezoelectric ceramic piece (21); the fixing frame (92) is embedded in the inner wall of the energy conversion cavity (3), the inner wall of the fixing frame (92) and the inner wall of the abutting-pressing frame (91) are matched up and down to form a wiring cavity (93) for containing the radio-frequency wire (8), and the fixing frame (92) is fixedly connected to the limiting step (31) to be limited and fixed through the abutting-pressing frame (91) to form the energy conversion layer (2).

4. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 1, wherein: the transduction layer (2) further comprises a titanium alloy sheet (22), the piezoelectric ceramic sheets (21) are longitudinally arranged on the upper surface of the titanium alloy sheet (22), and the titanium alloy sheet (22) is longitudinally and hermetically covered on an opening of the transduction cavity (3) communicated with the injection cavity (4).

5. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 4, wherein: and a Teflon sealing ring A (23) is hermetically clamped between the edge of the lower bottom surface of the titanium alloy sheet (22) and the bottom surface of the transduction cavity (3).

6. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 1, wherein: the shell (1) is also internally and longitudinally provided with a buffer cavity (10) which is positioned at the other side of the upper part of the spraying cavity (4) and is communicated with the other side of the upper part of the spraying cavity (4), and the opening position of the bottom surface at the communication position of the buffer cavity (10) and the other side wall of the spraying cavity (4) is lower than the opening position at the communication position of the liquid distribution cavity (5) and the side wall of the spraying cavity (4).

7. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 1, wherein: one side of casing (1) is equipped with liquid level detection device (11), liquid level detection device (11) including drainage portion (111) and photoelectric sensor (112), be equipped with liquid storage cavity (113) in drainage portion (111), liquid storage cavity (113) through drainage pipeline (114) and the injection chamber (4) intercommunication of a vertical setting, photoelectric sensor (112) set firmly on drainage portion (111) and with ultrasonic wave or megasonic generator's control module electric connection, its sensing probe one end stretches into in liquid storage cavity (113) for the sensing jet chamber (4) in whether have semiconductor washing liquid and to control module send liquid level sensing signal.

8. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 1, wherein: casing (1) including sealed fixed connection last casing (12) as an organic whole and lower casing (13), annotate the vertical equipartition of liquid pipeline (6) in go up one side of casing (12) and run through its terminal surface from top to bottom, transduction chamber (3) correspond and vertically set up in the other one side of last casing (12) and run through its terminal surface from top to bottom, go up the lower terminal surface middle part of casing (12) and constitute spray chamber (4) with the upper portion profile in cloth liquid chamber (5), the up end middle part of casing (13) corresponds the lower part profile that constitutes spray chamber (4) and cloth liquid chamber (5) down, go up the lower terminal surface edge of casing (12) and the up end edge of casing (13) down between sealed fixation clamp have indisputable fluorine dragon sealing washer B (14).

9. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 8, wherein: go up casing (12) on fixedly connected with one be used for the closing cap transducer chamber (3) upper portion open-ended shrouding (15), sealed centre gripping has teflon sealing washer C (16) between shrouding (15) and last casing (12).

10. An ultrasonic cleaning device for semiconductor surface cleaning according to claim 8, wherein: a plurality of liquid injection pipe quick-release connectors (17) which are fixedly connected with an opening at the upper part of the liquid injection pipeline (6) through threads are longitudinally arranged on one side of the upper end surface of the upper shell (12), and a plurality of cable plug connectors (18) which are used for extending out and locking and fixing the radio frequency cable (8) are longitudinally arranged on the other side of the upper end surface of the upper shell (12).