CN216213480U - Solar cell's matte structure - Google Patents
Solar cell's matte structure Download PDFInfo
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- CN216213480U CN216213480U CN202122303685.5U CN202122303685U CN216213480U CN 216213480 U CN216213480 U CN 216213480U CN 202122303685 U CN202122303685 U CN 202122303685U CN 216213480 U CN216213480 U CN 216213480U
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- 239000002184 metal Substances 0.000 claims abstract description 46
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- 238000006243 chemical reaction Methods 0.000 abstract description 9
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- 229910017604 nitric acid Inorganic materials 0.000 description 4
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000007788 liquid Substances 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
The utility model provides a suede structure of a solar cell, which comprises a suede surface, wherein the surface of the suede surface is divided into a contact area and a non-contact area, the contact area is provided with a metal grid line, and the specific surface area of the contact area is smaller than that of the non-contact area. The textured structures with different microstructures are formed in the textured surface of the metal grid line covering region and the metal grid line non-covering region, the specific surface area of the textured structure of the non-covering region is far larger than that of the textured structure of the covering region, the contact area of the sizing agent metal and a PN junction on the textured surface is reduced, the metal compounding is reduced by more than 20%, and the conversion efficiency is improved.
Description
Technical Field
The utility model belongs to the technical field of solar cells, and relates to a textured structure of a solar cell.
Background
The solar cell is a semiconductor component which can convert sunlight into electric energy, and the monocrystalline silicon solar cell has the highest conversion efficiency in the silicon series solar cell and the most mature technology. The monocrystalline silicon is rod-shaped monocrystalline silicon grown from amorphous silicon or polycrystalline silicon by Czochralski method or suspension zone melting method, and has purity of over 99.9999%. The process for the preparation of single crystal silicon solar cells generally comprises: (1) in an alkaline solution, anisotropically corroding a silicon wafer to obtain the surface appearance of a pyramid structure; (2) forming PN junction by high temperature phosphorus diffusion; (3) SF4 and O2 are used as raw materials, plasma etching is carried out on the edge of the diffused silicon wafer, and short circuit of a battery is prevented; (4) removing phosphorosilicate glass on the surface of the silicon wafer by using HF (hydrogen fluoride); (5) depositing an antireflection passivation film on the surface of the silicon wafer by adopting a PECVD method; (6) printing a back electrode, a back electric field and a positive electrode; (7) and (5) sintering.
The surface texturing technology of the monocrystalline silicon solar cell is an important step in the modern solar cell manufacturing process, and a pyramid-shaped line surface structure is manufactured on the surface of the solar cell by a chemical corrosion method, so that the reflectivity of the surface of the solar cell can be greatly reduced, the density of photon-generated carriers is improved, and the purposes of improving the cell energy conversion efficiency and reducing the production cost are achieved.
CN102148292B discloses a method for preparing a solar cell textured surface, wherein the solar cell textured surface is formed on the surface of the light receiving surface side of a solar cell silicon wafer, the preparation method adopts a nano-imprinting manner, before the texturing process is started, a mask material on a pre-prepared pattern template is transferred to the surface of the solar cell silicon wafer in an imprinting manner to form a mask layer of the texturing process, and then the texturing process can be performed by using a wet etching or plasma etching method.
CN112768555A discloses a method for manufacturing a solar cell suede; the method comprises the following steps: a pre-cleaning step; placing the solar cell in the mixed solution for surface cleaning; a step of removing damage; a first cleaning step is also included between the damage removing step and the rapid large suede step; a step of quickly making a large suede; treating the sharp top of the large velvet surface; a second cleaning step is also included between the step of processing the sharp top of the large suede surface and the step of growing the small suede surface; growing a small suede surface; the step of growing the small suede surface comprises a third cleaning step; the third cleaning step is followed by a pre-dehydration step; the pre-dehydration step is followed by a heat drying step.
CN103441182A discloses a solar cell and a method for processing a textured surface thereof. The suede processing method comprises the following steps: primarily cleaning the texture surface of the textured solar cell by using a mixed aqueous solution of HCl and HF, wherein the mass fraction of HCl is 3-7% and the mass fraction of HF is 1-2% in the mixed aqueous solution of HCl and HF; by HNO3Etching the primarily cleaned suede with mixed aqueous solution of HF and HNO3And HF mixed aqueous solution, HNO3The mass fraction of the hydrogen fluoride is 20 to 50 percent, and the mass fraction of the HF is 0.5 to 5 percent; by means of H2SO4And H2O2The mixed aqueous solution oxidizes the etched suede surface to form an oxide layer H2SO4And H2O2In the mixed aqueous solution of (1), H2SO4Is 60 to 80 percent, and H2O2The mass fraction of (A) is 5-12%.
The main function of the suede is light trapping, but after the metal grid line is printed, the suede is shielded, and the suede in the area cannot play a role in light trapping. The specific surface area of the textured structure on the surface is greatly increased compared with the specific surface area of the non-textured structure, and the contact area between the sizing metal and the PN junction on the textured surface is increased, so that the metal recombination is increased, and the negative effect is brought.
SUMMERY OF THE UTILITY MODEL
Aiming at the defects in the prior art, the utility model aims to provide a suede structure of a solar cell, and the utility model provides the suede structure of the solar cell, wherein suede structures with different microstructures are formed in a suede surface of a metal grid line covering region (a contact region) and a metal grid line non-covering region (a non-contact region), the specific surface area of the suede structure of the non-covering region is far larger than that of the suede structure of the covering region, the contact area of slurry metal and PN junctions on the suede surface is reduced, the metal recombination is reduced by more than 20%, and the conversion efficiency is improved.
In order to achieve the purpose, the utility model adopts the following technical scheme:
in a first aspect, the utility model provides a textured structure of a solar cell, the textured structure comprises a textured surface, the surface of the textured surface is divided into a contact area and a non-contact area, the contact area is provided with a metal grid line, and the specific surface area of the contact area is smaller than that of the non-contact area.
The utility model provides a suede structure of a solar cell, wherein suede structures with different microcosmic appearances are formed in a suede surface of a metal grid line covering area (a contact area) and a metal grid line non-covering area (a non-contact area), the specific surface area of the suede structure of the non-covering area is far larger than that of the suede structure of the covering area, the contact area of slurry metal and PN junctions on the suede surface is reduced, the metal compounding is reduced by more than 20%, and the conversion efficiency is improved.
The specific surface area in the present invention refers to the surface area of the pile structure per unit area.
As a preferred technical solution of the present invention, the textured surface is sequentially stacked with a PN junction and a passivation layer, and the metal gate line is located on the surface of the passivation layer corresponding to the contact region.
The suede reflectivity of the contact area is larger than that of the non-contact area.
The textured reflectivity of the contact area is 8-46%, for example, 10%, 12%, 14%, 16%, 18%, 20%, 22%, 24%, 26%, 28%, 30%, 32%, 34%, 36%, 38%, 40%, 42%, 44%, or 46%, but is not limited to the recited values, and other values not recited in the range of values are also applicable.
The non-contact area may have a textured surface reflectance of 5 to 14%, for example, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, or 14%, but is not limited to the values listed, and other values not listed in the range of values are also applicable.
As a preferable technical scheme of the utility model, the surface of the non-contact area is an irregular structure array, and the surface of the contact area is a flat suede.
The utility model carries out planarization treatment on the suede of the contact area with different degrees and different appearances, can effectively reduce the contact area between metal and the suede, reduces metal recombination and improves the conversion efficiency of the battery. It should be noted that the term "flat textured surface" in the present invention is a relative concept compared to an irregular structure array, and means that the surface of a contact area is more flat than a non-contact area, and may be "flat" in an absolute sense or may have a gentle relief structure.
The irregular structure array comprises all-over pyramid bulges or inverted pyramid depressions, and the pyramid bulges or the inverted pyramid depressions are different in size and are distributed randomly in positions.
As a preferable technical solution of the present invention, the contact area is a depressed flat textured surface.
The utility model carries out sinking treatment on the suede of the contact area, effectively reduces the transmission path of carriers while reducing the contact area of the metal grid line and the suede, and improves the conversion efficiency of the battery.
As a preferred technical solution of the present invention, the non-contact area is an irregular structure array, and the contact area is a regular structure array.
According to the utility model, the textured surface of the contact area is subjected to regularization treatment, so that the contact area of metal and the textured surface can be reduced, the metal grid lines are parallel to the regular pyramid structure array, the metal grid lines can be regularly paved into the grooves among pyramid results, the transmission path of current carriers is reduced, the broken grid is reduced, the contact resistance is reduced, and the conversion efficiency is improved.
The irregular structure array comprises pyramid protrusions or inverted pyramid depressions which are distributed all over, and the pyramid protrusions or the inverted pyramid depressions are different in size and are distributed randomly in positions.
The regular structure array comprises at least two rows of strip-shaped protruding structures or strip-shaped groove structures which are parallel to each other.
As a preferred technical solution of the present invention, the non-contact area and the contact area are both irregular structure arrays.
As a preferred technical solution of the present invention, the irregular structure array of the contact region includes first pyramid protrusions distributed all over, the irregular structure array of the non-contact region includes second pyramid protrusions distributed all over, and the height of the first pyramid protrusions is smaller than that of the second pyramid protrusions.
As a preferred embodiment of the present invention, the irregular structure array of the contact region includes a first inverted pyramid recess extending over the irregular structure array of the non-contact region, and the irregular structure array of the non-contact region includes a second inverted pyramid recess extending over the irregular structure array of the non-contact region, and the depth of the first inverted pyramid recess is smaller than the depth of the second inverted pyramid recess.
As a preferred technical solution of the present invention, the irregular structure array of the contact region includes third pyramid protrusions distributed all over, the irregular structure array of the non-contact region includes third inverted pyramid depressions distributed all over, and the height of the third pyramid protrusions is smaller than the depth of the third inverted pyramid depressions.
As a preferred technical solution of the present invention, the irregular structure array of the contact region includes a fourth inverted pyramid recess all over, the irregular structure array of the non-contact region includes a fourth pyramid projection all over, and a depth of the fourth inverted pyramid recess is smaller than a depth of the fourth pyramid projection.
It should be noted that the core utility model of the present invention is to form the textured structure with different micro-morphologies in the contact area and the non-contact area, and to reduce the contact area between the metal paste in the contact area and the textured structure, so it can be understood that the present invention does not have special requirements and special limitations on the specific shapes and distribution modes of the convex structures and the concave structures in the contact area and the non-contact area.
Illustratively, the preparation method of the textured structure of the solar cell can be optionally prepared by adopting any one of the following texturing methods:
the first texturing method specifically comprises the following steps:
(1) texturing the surface of a silicon wafer to form a textured surface, and depositing a mask on the textured surface;
(2) removing the mask of a partial region by laser to form a groove with the same shape as the metal grid line;
(3) and corroding the suede of the groove area by using corrosive liquid to form a contact area, then removing all the masks, and forming a non-contact area in the mask shielding area to obtain the suede structure.
The second texturing method specifically comprises the following steps:
firstly, texturing the surface of a silicon wafer to form a textured surface, and performing fusion carving on the region where the metal grid line is located to form a contact region;
(II) carrying out high-temperature oxidation on the silicon wafer to form a silicon oxide layer on the surface, and removing the silicon oxide layer again;
(III) printing a mask shielding contact area on the surface of the silicon wafer, performing secondary texturing on the surface of the silicon wafer in the non-shielding area to form a non-contact area, and removing the mask to obtain the textured structure.
Compared with the prior art, the utility model has the beneficial effects that:
the utility model provides a suede structure of a solar cell, wherein suede structures with different microcosmic appearances are formed in a suede surface of a metal grid line covering area (a contact area) and a metal grid line non-covering area (a non-contact area), the specific surface area of the suede structure of the non-covering area is far larger than that of the suede structure of the covering area, the contact area of slurry metal and PN junctions on the suede surface is reduced, the metal compounding is reduced by more than 20%, and the conversion efficiency is improved.
Drawings
Fig. 1 is a schematic view of a textured structure provided in embodiment 1 of the present invention;
fig. 2 is a schematic view of a textured structure provided in embodiment 2 of the present invention;
fig. 3 is a schematic view of a textured structure provided in embodiment 3 of the present invention;
fig. 4 is a schematic view of a textured structure provided in embodiment 4 of the present invention;
fig. 5 is a schematic view of a textured structure provided in embodiment 5 of the present invention;
fig. 6 is a schematic view of a textured structure provided in embodiment 6 of the present invention;
fig. 7 is a schematic view of a textured structure provided in embodiment 7 of the present invention;
fig. 8 is a schematic view of a textured structure provided in embodiment 8 of the present invention;
fig. 9 is a schematic view of a textured structure provided in embodiment 9 of the present invention;
fig. 10 is a schematic view of a textured structure provided in embodiment 10 of the present invention.
Wherein, 1-the non-contact area; 2-a contact zone; 3-a metal grid line; 4-first pyramid protrusions; 5-second pyramid protrusions; 6-first inverted pyramid indentation; 7-a second inverted pyramid depression; 8-third pyramid protrusions; 9-a third inverted pyramid depression; 10-wave-shaped bulges; 11-pyramid protrusions; a 12-PN junction; 13-passivation layer.
Detailed Description
It is to be understood that in the description of the present invention, the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be taken as limiting the present invention. Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
The technical scheme of the utility model is further explained by the specific implementation mode in combination with the attached drawings.
Example 1
The embodiment provides a suede structure of a solar cell, which is shown in fig. 1 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the surface of the suede surface, the surface of the passivation layer 13 is divided into a contact area 2 and a non-contact area 1, and the contact area is provided with a metal grid line 3.
The surface of the non-contact area 1 is an irregular pyramid structure array which comprises all pyramid bulges, the pyramid bulges are different in size and are randomly distributed in position, and the surface of the contact area 2 is a flat suede.
The suede reflectivity of the contact area is 38%, and the suede reflectivity of the non-contact area is 8%.
Example 2
The embodiment provides a suede structure of a solar cell, which is shown in fig. 2 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the surface of the suede surface, the surface of the passivation layer 13 is divided into a contact area 2 and a non-contact area 1, and the contact area is provided with a metal grid line 3.
The surface of the non-contact area 1 is an irregular pyramid structure array and comprises inverted pyramid depressions which are distributed all over, the sizes of the inverted pyramid depressions are different, the inverted pyramid depressions are randomly distributed, and the surface of the contact area 2 is a flat suede.
The suede reflectivity of the contact area is 38%, and the suede reflectivity of the non-contact area is 6%.
Example 3
The embodiment provides a suede structure of a solar cell, which is shown in fig. 3 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the surface of the suede surface, the surface of the passivation layer 13 is divided into a contact area 2 and a non-contact area 1, and the contact area is provided with a metal grid line 3.
The surface of the non-contact area 1 is an irregular pyramid structure array which comprises all pyramid protrusions, the pyramid protrusions are different in size and are randomly distributed in position, and the surface of the contact area 2 is a sunken flat suede.
The suede reflectivity of the contact area is 38%, and the suede reflectivity of the non-contact area is 8%.
Example 4
The embodiment provides a suede structure of a solar cell, which is shown in fig. 4 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the surface of the suede surface, the surface of the passivation layer 13 is divided into a contact area 2 and a non-contact area 1, and the contact area is provided with a metal grid line 3.
The surface of the non-contact area 1 is an irregular pyramid structure array and comprises distributed inverted pyramid depressions, the sizes of the inverted pyramid depressions are different, the inverted pyramid depressions are randomly distributed, and the surface of the contact area 2 is a sunken flat suede.
The suede reflectivity of the contact area is 36%, and the suede reflectivity of the non-contact area is 5%.
Example 5
The embodiment provides a suede structure of a solar cell, which is shown in fig. 5 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the suede surface, the surface of the passivation layer 13 is divided into a contact region 2 and a non-contact region 1, and the contact region is provided with a metal grid line 3.
The non-contact area 1 is an irregular pyramid structure array and comprises pyramid protrusions which are distributed all over, and the pyramid protrusions are different in size and are distributed randomly in positions. The contact area 2 is a regular structure array and comprises a plurality of rows of mutually parallel strip-shaped protruding structures, and the height of the strip-shaped protruding structures of the contact area 2 is greater than that of the pyramid protrusions of the non-contact area 1.
The suede reflectivity of the contact area is 20%, and the suede reflectivity of the non-contact area is 7%.
Example 6
The embodiment provides a suede structure of a solar cell, which is shown in fig. 6 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the suede surface, the surface of the passivation layer 13 is divided into a contact region 2 and a non-contact region 1, and the contact region is provided with a metal grid line 3.
The non-contact area 1 is an irregular pyramid structure array and comprises pyramid protrusions which are distributed all over, and the pyramid protrusions are different in size and are distributed randomly in positions. The contact area 2 is a regular structure array and comprises a plurality of rows of mutually parallel strip-shaped protruding structures, and the height of the strip-shaped protruding structures of the contact area 2 is smaller than that of the pyramid protrusions of the non-contact area 1.
The suede reflectivity of the contact area is 30%, and the suede reflectivity of the non-contact area is 7%.
Example 7
The embodiment provides a suede structure of a solar cell, which is shown in fig. 7 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the suede surface, the surface of the passivation layer 13 is divided into a contact region 2 and a non-contact region 1, and the contact region is provided with a metal grid line 3.
Both the non-contact area 1 and the contact area 2 are irregular pyramid structure arrays. The pyramid structure array of the contact region 2 comprises a first pyramid protrusion 4, the pyramid structure array of the non-contact region 1 comprises a second pyramid protrusion 5, and the height of the first pyramid protrusion 4 is smaller than that of the second pyramid protrusion 5.
The suede reflectivity of the contact area is 25%, and the suede reflectivity of the non-contact area is 7%.
Example 8
The embodiment provides a suede structure of a solar cell, which is shown in fig. 8 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the suede surface, the surface of the passivation layer 13 is divided into a contact region 2 and a non-contact region 1, and the contact region is provided with a metal grid line 3.
Both the non-contact area 1 and the contact area 2 are irregular pyramid structure arrays. The array of pyramid structures of contact region 2 comprises a first inverted pyramid recess 6 throughout, and the array of pyramid structures of non-contact region 1 comprises a second inverted pyramid recess 7 throughout, the first inverted pyramid recess 6 having a depth less than the depth of the second inverted pyramid recess 7.
The suede reflectivity of the contact area is 15%, and the suede reflectivity of the non-contact area is 5%.
Example 9
The embodiment provides a suede structure of a solar cell, which is shown in fig. 9 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the suede surface, the surface of the passivation layer 13 is divided into a contact region 2 and a non-contact region 1, and the contact region is provided with a metal grid line 3.
The pyramid structure array of the contact region 2 comprises a third extending pyramid projection 8, the pyramid structure array of the non-contact region 1 comprises a third extending inverted pyramid depression 9, and the height of the third pyramid projection 8 is smaller than the depth of the third inverted pyramid depression 9.
The suede reflectivity of the contact area is 25%, and the suede reflectivity of the non-contact area is 5%.
Example 10
The embodiment provides a suede structure of a solar cell, which is shown in fig. 10 and comprises a suede surface, wherein a PN junction 12 and a passivation layer 13 are sequentially stacked on the suede surface, the surface of the passivation layer 13 is divided into a contact region 2 and a non-contact region 1, and the contact region is provided with a metal grid line 3.
The surface of the contact region 2 is provided with all-over wave-shaped bulges 10, the surface of the non-contact region 1 is provided with irregular pyramid bulges 11, and the height of the wave-shaped bulges 10 is less than that of the pyramid bulges 11.
The suede reflectivity of the contact area is 35%, and the suede reflectivity of the non-contact area is 8%.
Example 11
The embodiment provides a method for preparing a textured structure according to embodiment 1, which specifically includes the following steps:
(1) texturing the surface of a silicon wafer to form a textured surface, and depositing SiN on the textured surface by adopting a PECVD methodxMask film；
(2) Removing the mask of a partial region by laser to form a groove with the same shape as the metal grid line 3;
(3) using HF and HNO3And corroding the suede of the groove area by using the mixed acid solution to form a contact area 2, then removing all masks by using an HF solution, and forming a non-contact area 1 in the mask shielding area to obtain the suede structure.
Example 12
The embodiment provides a method for preparing a textured structure according to embodiment 1, which specifically includes the following steps:
(1) performing primary texturing on the surface of a silicon wafer to form a textured surface, and performing fusion carving on the region where the metal grid line 3 is located to form a contact region 2;
(2) carrying out high-temperature oxidation on the silicon wafer to form a silicon oxide layer on the surface, and removing the silicon oxide layer by adopting HF (hydrogen fluoride);
(3) printing a mask on the surface of the silicon wafer to shield the contact region 2, performing secondary texturing on the surface of the silicon wafer to form a non-contact region 1, and removing the mask to obtain the textured structure.
The applicant declares that the above description is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be understood by those skilled in the art that any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are within the scope and disclosure of the present invention.
Claims (9)
1. The suede structure of the solar cell is characterized in that the suede structure comprises a suede surface, the surface of the suede surface is divided into a contact area and a non-contact area, the contact area is provided with a metal grid line, and the specific surface area of the contact area is smaller than that of the non-contact area.
2. The suede structure of claim 1, wherein a PN junction and a passivation layer are sequentially stacked on the suede surface, and the metal grid line is located on the surface of the passivation layer corresponding to the contact region;
the suede reflectivity of the contact area is greater than that of the non-contact area;
the suede reflectivity of the contact area is 8-46%;
the suede reflectivity of the non-contact area is 5-14%.
3. A pile structure according to claim 2, wherein the non-contact zone surfaces comprise generally pyramidal protrusions or inverted pyramidal depressions, the pyramidal protrusions or inverted pyramidal depressions being of different sizes and randomly located;
the surface of the contact area is a flat suede.
4. A pile structure according to claim 3, wherein the contact areas are depressed flat piles.
5. A pile structure according to claim 2, wherein the non-contact areas are all-over pyramid-shaped protrusions or inverted pyramid-shaped depressions, the pyramid-shaped protrusions or inverted pyramid-shaped depressions being of different sizes and randomly distributed in positions;
the contact area is a regular structure array, and the regular structure array comprises at least two rows of mutually parallel strip-shaped protruding structures or strip-shaped groove structures.
6. A pile structure as claimed in claim 2, wherein the contact zones comprise first pyramidal projections extending over the pile and the non-contact zones comprise second pyramidal projections extending over the pile, the first pyramidal projections having a height less than the height of the second pyramidal projections.
7. A pile structure according to claim 2, wherein the contact zone comprises a first plurality of inverted pyramidal depressions extending therethrough, and the non-contact zone comprises a second plurality of inverted pyramidal depressions extending therethrough, the first plurality of inverted pyramidal depressions having a depth less than the depth of the second plurality of inverted pyramidal depressions.
8. A pile structure according to claim 2, wherein the contact zone comprises third pyramidal protrusions extending throughout, and the non-contact zone comprises third inverted pyramidal recesses extending throughout, the third pyramidal protrusions having a height less than the depth of the third inverted pyramidal recesses.
9. A pile structure according to claim 2, wherein the contact zone comprises a fourth, generally inverted pyramid-shaped recess extending therethrough, and the non-contact zone comprises a fourth, generally inverted pyramid-shaped projection extending therethrough, the fourth, generally inverted pyramid-shaped recess having a depth less than a depth of the fourth, generally pyramid-shaped projection.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115117202A (en) * | 2022-07-05 | 2022-09-27 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of solar cell and solar cell |
| WO2023046070A1 (en) * | 2021-09-23 | 2023-03-30 | 天合光能股份有限公司 | Texture structure of solar cell and preparation method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023046070A1 (en) * | 2021-09-23 | 2023-03-30 | 天合光能股份有限公司 | Texture structure of solar cell and preparation method therefor |
| CN115117202A (en) * | 2022-07-05 | 2022-09-27 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of solar cell and solar cell |
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