CN216161724U - 一种半导体存储器件 - Google Patents
一种半导体存储器件 Download PDFInfo
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- CN216161724U CN216161724U CN202122085598.7U CN202122085598U CN216161724U CN 216161724 U CN216161724 U CN 216161724U CN 202122085598 U CN202122085598 U CN 202122085598U CN 216161724 U CN216161724 U CN 216161724U
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- fixedly connected
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- circuit board
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000015654 memory Effects 0.000 claims abstract description 48
- 230000017525 heat dissipation Effects 0.000 claims abstract description 28
- 230000001681 protective effect Effects 0.000 claims description 8
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910001021 Ferroalloy Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000009434 installation Methods 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 13
- 241001233242 Lontra Species 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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Abstract
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CN202122085598.7U CN216161724U (zh) | 2021-08-30 | 2021-08-30 | 一种半导体存储器件 |
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CN202122085598.7U CN216161724U (zh) | 2021-08-30 | 2021-08-30 | 一种半导体存储器件 |
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CN216161724U true CN216161724U (zh) | 2022-04-01 |
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CN202122085598.7U Active CN216161724U (zh) | 2021-08-30 | 2021-08-30 | 一种半导体存储器件 |
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2021
- 2021-08-30 CN CN202122085598.7U patent/CN216161724U/zh active Active
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GR01 | Patent grant | ||
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TR01 | Transfer of patent right |
Effective date of registration: 20220906 Address after: 100000 0146, floor 3, building 1, yard 1, Shuangyu South Street, Shunyi District, Beijing Patentee after: Beijing Ketai optical core semiconductor equipment Technology Co.,Ltd. Address before: 530100 banlvtun, Datong village, Chengxiang Town, Wuming County, Nanning City, Guangxi Zhuang Autonomous Region Patentee before: Lv Weijie |
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TR01 | Transfer of patent right | ||
CP03 | Change of name, title or address |
Address after: 101399 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang 2nd Road) Patentee after: Beijing Ruihuayu Semiconductor Equipment Co.,Ltd. Country or region after: China Address before: 100000 0146, floor 3, building 1, yard 1, Shuangyu South Street, Shunyi District, Beijing Patentee before: Beijing Ketai optical core semiconductor equipment Technology Co.,Ltd. Country or region before: China |
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CP03 | Change of name, title or address | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240324 Address after: 528248, No. 16 Guangming Avenue, New Light Source Industrial Base, Shishan Town, Nanhai District, Foshan City, Guangdong Province (Residence application, multiple photos for one address) Patentee after: Foshan Xince Technology Co.,Ltd. Country or region after: China Address before: 101399 North Wenhuaying Village, Shunyi District, Beijing (No. 1, Shunchuang 2nd Road) Patentee before: Beijing Ruihuayu Semiconductor Equipment Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |