CN216086610U - Superconducting radio frequency switch, quantum computing integrated assembly and quantum computer - Google Patents
Superconducting radio frequency switch, quantum computing integrated assembly and quantum computer Download PDFInfo
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- CN216086610U CN216086610U CN202122390454.2U CN202122390454U CN216086610U CN 216086610 U CN216086610 U CN 216086610U CN 202122390454 U CN202122390454 U CN 202122390454U CN 216086610 U CN216086610 U CN 216086610U
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Abstract
The application discloses a superconducting radio frequency switch, a quantum computing integrated component and a quantum computer, belongs to the field of quantum information, and particularly relates to the technical field of quantum computing. The superconducting radio frequency switch includes: the radio frequency signal transmission line is formed on the substrate and comprises an input line, an output line and a superconducting nano transmission line, wherein one end of the superconducting nano transmission line is connected with the input line, and the other end of the superconducting nano transmission line is connected with the output line, and the critical temperature of the superconducting nano transmission line is below 15K; the power supply transmission line is formed on the substrate and used for connecting two ends of the superconducting nano transmission line with a direct current source; and the state of the direct current source comprises: a first state in which the output current exceeds the critical current of the superconducting nano-transmission line, and a second state in which the output current is below the critical current. The superconducting radio frequency switch provided by the application can be used for regulating and controlling the superconducting state and the quench state of the superconducting nano transmission line by providing current applied to the superconducting nano transmission line through the direct current source so as to realize the on-off of signal transmission.
Description
Technical Field
The application belongs to the field of quantum information, particularly relates to the technical field of quantum computing, and particularly relates to a superconducting radio frequency switch, a quantum computing integrated component and a quantum computer.
Background
Quantum computers are physical devices that perform high-speed mathematical and logical operations, store and process quantum information in compliance with the laws of quantum mechanics. The superconducting quantum chip as the core component of the quantum computer works in the extremely low temperature region of the dilution refrigerator, usually only a few or even a few milli, and in order to measure and control each bit on the quantum chip, a signal measuring and controlling system working in the normal temperature region needs to be in communication connection with the quantum chip. As the number of bits increases, the number of signal paths establishing a communication connection also increases. In order to relieve wiring pressure caused by the sharp increase of the number of bits, a radio frequency switch is introduced into a signal transmission path from a signal measurement and control system to a quantum chip, so that one path of signal channel led out from the signal measurement and control system can provide signals for a plurality of ports of the quantum chip.
At present, a common radio frequency switch is a GaAs/InGaAs semiconductor radio frequency switch, but the working temperature of the switch is usually-40 ℃ to +85 ℃, quantum computation usually needs to work in a 4K (-269 ℃) temperature region, and the conventional radio frequency switch has poor stability at the low temperature, is easy to self-excited oscillate and has high failure risk.
There is a need to provide a switching circuit that can meet the requirements of quantum computing.
Summary of the invention
In order to solve the problem that the existing radio frequency switch is poor in stability when working at a low temperature, the application provides a radio frequency signal switch suitable for working in a superconducting quantum chip working temperature region, aims to overcome the defects in the prior art, and particularly provides a superconducting radio frequency switch, a quantum computing integrated component and a quantum computer.
A first aspect of the present application provides a superconducting radio frequency switch comprising:
a radio frequency signal transmission line formed on a substrate, the radio frequency signal transmission line including an input line, an output line, and a superconducting nano transmission line having one end connected to the input line and the other end connected to the output line, the superconducting nano transmission line having a critical temperature of 15K or less; and
the power supply transmission line is formed on the substrate and used for connecting two ends of the superconducting nano transmission line with a direct current source; and the state of the direct current source comprises: a first state in which an output current exceeds a critical current of the superconducting nano-transmission line, and a second state in which an output current is lower than the critical current. The two ends of the superconducting nano transmission line are connected with a direct current source, the direct current source is used for providing current applied to the superconducting nano transmission line, and the state of the superconducting nano transmission line is regulated and controlled to be switched between a superconducting state and a quench state by adjusting the state of the direct current source to be a first state or a second state, so that the switching between the on state and the off state of the radio-frequency signal transmission line during the transmission of radio-frequency signals is realized.
As described above, when the output current of the dc source exceeds the critical current of the superconducting nano transmission line, the superconducting nano transmission line quenches, and after quenching, the impedance of the superconducting nano transmission line exceeds the preset impedance to ensure that the impedance mismatch degree of the superconducting nano transmission line is high, and the preset impedance may be any value of 1000 Ω or more than 1000 Ω.
According to the superconducting radio frequency switch, when the output current of the direct current source exceeds the critical current of the superconducting nano transmission line, the superconducting nano transmission line quenches, and after quenching, the isolation degree of the superconducting nano transmission line exceeds the preset isolation degree to ensure the realization of the radio frequency signal switching function, and the preset isolation degree can be any value of 50dB and more than 50 dB.
The superconducting radio frequency switch has the critical current density of no more than 10MA/cm2。
As described above, the material of the superconducting nano transmission line is a superconducting compound containing a metal element and a nonmetal element, and the material of the superconducting nano transmission line may be TaN or NbN, for example.
The superconducting radio frequency switch as described above, the radio frequency signal transmission line further includes a first impedance transformation circuit between the input line and the superconducting nano-transmission line, and a second impedance transformation circuit between the superconducting nano-transmission line and the output line.
In the above superconducting radio frequency switch, the first impedance transformation circuit and the second impedance transformation circuit are both impedance transformation lines.
In the above superconducting radio frequency switch, the impedance transformation line is an 1/4 wavelength impedance transformation line.
In the superconducting radio frequency switch, the input line and the first impedance transformation circuit are capacitively coupled, and the output line and the second impedance transformation circuit are capacitively coupled.
As described above for the superconducting radio frequency switch, the capacitor is a parallel plate capacitor.
The superconducting radio frequency switch as described above, the parallel plate capacitor includes a portion of the input line, a portion of the first impedance transformation circuit, and an insulating dielectric layer between the portion of the input line and the portion of the first impedance transformation circuit.
In the superconducting radio frequency switch, the power transmission line forms total reflection on radio frequency signals.
In the above superconducting radio frequency switch, the power supply transmission line is made of non-superconducting metal or superconducting material with critical transition current higher than the critical current.
According to a second aspect of the present application, a superconducting radio frequency switch is disposed between a quantum chip and a signal measurement and control system, and one signal channel of the signal measurement and control system corresponds to a plurality of ports of the quantum chip, so that the number of transmission lines can be reduced. Specifically, the quantum computing integrated component comprises:
the quantum chip is provided with a plurality of quantum bits and a signal port, and the signal port is used for receiving a quantum state regulation signal or a quantum state reading signal aiming at each quantum bit or outputting a feedback signal aiming at the quantum state reading signal;
a signal measurement and control system for generating a quantum state regulation signal and a quantum state read signal for each of the qubits and collecting a feedback signal for the quantum state read signal; and
in the superconducting radio frequency switch, the input line is connected to the signal measurement and control system through a first group of transmission lines, the output line is connected to the quantum chip through a second group of transmission lines, the first group of transmission lines and the second group of transmission lines transmit signals of the same type and are one of the quantum state regulation signal, the quantum state read signal and the feedback signal, and the number of transmission lines of the first group of transmission lines is smaller than the number of transmission lines of the second group of transmission lines.
The quantum computing integrated component as described above, the first set of transmission lines having 1 transmission line.
A third aspect of the application provides a quantum computer comprising a superconducting radio frequency switch as described above, or comprising a quantum computing integrated component as described above.
Compared with the prior art, the superconducting radio frequency switch provided by the application is suitable for realizing the control of the on-off of radio frequency signal transmission at low temperature, and comprises a radio frequency signal transmission line formed on a substrate, wherein the radio frequency signal transmission line comprises an input line, an output line and a superconducting nano transmission line, one end of the superconducting nano transmission line is connected with the input line, and the other end of the superconducting nano transmission line is connected with the output line, and the critical temperature of the superconducting nano transmission line is below 15K; and a power supply transmission line formed on the substrate to connect the superconducting nano transmission line to a direct current source, the state of the direct current source including: the output current exceeds the first state of the critical current of the superconducting nano transmission line and is lower than the second state of the critical current, so that the current on the superconducting nano transmission line can be switched between the two states of exceeding the critical current and being lower than the critical current by adjusting the output current of the direct current source, when the current on the superconducting nano transmission line is lower than the critical current, the superconducting nano transmission line is in a superconducting state, and when the current on the superconducting nano transmission line exceeds the critical current, the superconducting nano transmission line is in a non-superconducting state (namely a resistance state), so that the switching of the superconducting nano transmission line between the superconducting state and the non-superconducting state is realized, and the on-off control of radio frequency signal transmission under a low-temperature working environment is realized.
Drawings
Fig. 1 is a schematic structural diagram of a group of qubits on a quantum chip according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a quantum chip of a superconducting system according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a superconducting radio frequency switch according to an embodiment of the present application;
FIG. 4 is an enlarged view of A in FIG. 3;
fig. 5 is a schematic diagram of a quantum computing integrated component provided in an embodiment of the present application.
Description of reference numerals:
1-ground plane, 2-dielectric layer, 3-radio frequency signal transmission line, 4-power supply transmission line,
31-input line, 311-first input line, 312-second input line, 32-output line, 321-first output line, 322-second output line, 33-first impedance transformation line, 34-second impedance transformation line, 35-superconducting nano transmission line, 36-first gold film, 37-second gold film,
41-first power supply transmission line, 42-second power supply transmission line, 43-third gold film, 44-fourth gold film.
Detailed Description
The following detailed description is merely illustrative and is not intended to limit the embodiments and/or the application or uses of the embodiments. Furthermore, there is no intention to be bound by any expressed or implied information presented in the "background" or "summary" sections or "detailed description" sections.
To further clarify the objects, aspects and advantages of embodiments of the present application, one or more embodiments are now described with reference to the drawings, wherein like reference numerals are used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a more thorough understanding of one or more embodiments. It may be evident, however, that one or more embodiments may be practiced without these specific details in various instances, and that the various embodiments are incorporated by reference into each other without departing from the scope of the present disclosure.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
In addition, it will be understood that when a layer (or film), region, pattern, or structure is referred to as being "on" a substrate or base, layer (or film), region, and/or pattern, it can be directly on the other layer or substrate (or base), and/or intervening layers may also be present. In addition, it will be understood that when a layer is referred to as being "under" another layer, it can be directly under the other layer, and/or one or more intervening layers may also be present. In addition, references to "on" and "under" layers may be made based on the drawings.
According to different physical systems adopted for constructing the qubits, the qubits include superconducting quantum circuits, semiconductor quantum dots, ion traps, diamond vacancies, topological quanta, photons and the like in a physical implementation manner. Superconducting quantum computing is the best solid quantum computing implementation method which is developed at present. Because the energy level structure of the superconducting quantum circuit can be regulated and controlled by an external electromagnetic signal, the controllability of the design customization of the circuit is strong. Meanwhile, due to the existing mature integrated circuit process, the superconducting quantum circuit has the scalability which is incomparable with most quantum physical systems.
Fig. 1 is a schematic structural diagram of a qubit on a quantum chip according to an embodiment of the present disclosure.
Currently, the structure of qubit usually employs a capacitor to ground and a superconducting quantum interference device with one end grounded and the other connected to the capacitor, and the capacitor is usually constructed as a cross-shaped parallel plate capacitor, see fig. 1, cross-shaped capacitor plate CqSurrounded by ground plane (GND), and cross-shaped capacitor plate CqA gap is arranged between the superconducting quantum interference device and a ground plane (GND), and one end of the superconducting quantum interference device is connected to the cross-shaped capacitor plate CqThe other end is connected to the ground plane (GND), and a cross-shaped capacitor plate CqThe first end of the first end is generally used for connecting a superconducting quantum interference device (squid), the second end is used for coupling with the reading resonant cavity, a certain space is reserved near the first end and the second end for wiring, for example, a space for arranging an XY signal transmission line and a Z signal transmission line is reserved near the first end, and a cross-shaped capacitor plate CqThe other two ends of the structure are used for coupling with adjacent quantum bits, and the quantum bits of the structure are convenient for one-dimensional chain arrangement.
Fig. 2 is a schematic structural diagram of a quantum chip of a superconducting system according to an embodiment of the present disclosure.
Referring to fig. 2, a plurality of quantum bits and read resonators that are in one-to-one correspondence and are coupled to each other are integrated on the quantum chip, one end of each read resonator, which is far away from the corresponding quantum bit, is connected to a read signal transmission line integrally disposed on the quantum chip, and each quantum bit is coupled to an XY signal transmission line and a Z signal transmission line. The XY signal transmission line is used for receiving a quantum state regulation signal, the Z signal transmission line is used for receiving a magnetic flux regulation signal, the magnetic flux regulation signal comprises a bias voltage signal and/or a pulse bias regulation signal, the bias voltage signal and the pulse bias regulation signal can regulate and control the frequency of the quantum bit, and the reading signal transmission line is used for receiving a reading detection signal and transmitting a reading feedback signal.
The quantum computing is performed as follows: and adjusting the frequency of the quantum bit to the working frequency by using a magnetic flux regulation signal on the Z signal transmission line, applying a quantum state regulation signal through the XY signal transmission line to carry out quantum state regulation on the quantum bit in the initial state, and reading the quantum state of the regulated quantum bit by using the reading resonant cavity. Specifically, a carrier frequency pulse signal, generally called a quantum state read signal or a read detection signal, is applied through the read signal transmission line, the quantum state read signal is generally a microwave signal with a frequency of 4-8GHz, and a quantum state in which a qubit is located is determined by analyzing a feedback signal output by the read signal transmission line and corresponding to the quantum state read signal. The fundamental reason that the reading resonant cavity can read the quantum state of the qubit is that different quantum states of the qubit are different from the dispersion frequency shift generated by the reading resonant cavity, so that different quantum states of the qubit have different responses to a quantum state reading signal applied to the reading resonant cavity, and the response signal is called a feedback signal or a reading feedback signal. Only when the carrier frequency of the quantum state read signal of the qubit is very close to the natural frequency (also called resonant frequency) of the reading resonant cavity, the reading resonant cavity will have a significant difference in response to the quantum state read signal due to the qubit being in different quantum states, i.e. the feedback signal has a maximized discriminative degree. Based on this, the quantum state of the qubit is determined by analyzing a feedback signal of a certain pulse length, for example, converting the feedback signal acquired each time into a coordinate point of an orthogonal plane coordinate system (i.e., an I-Q plane coordinate system), and determining whether the corresponding quantum state is the |0> state or the |1> state according to the position of the coordinate point, it can be understood that the |0> state and the |1> state are two eigenstates of the qubit.
A plurality of quantum bit structures and a circuit structure for regulating and reading quantum bit information are integrated on a quantum chip serving as a core component of a quantum computer. The quantum chip of the superconducting system works in an extremely low temperature region of the dilution refrigerator, usually only a few or even a few milli-kelets, and in order to facilitate measurement and control of each bit on the quantum chip, a signal measurement and control system working in a normal temperature region needs to be in communication connection with the quantum chip, for example, a signal port of the quantum chip is correspondingly connected with a signal output or input port of the signal measurement and control system by arranging a signal cable. As the number of qubits increases, the number of signal channels establishing a communication connection also increases. In order to relieve wiring pressure caused by the sharp increase of the number of quantum bits, a radio frequency switch is introduced into a signal transmission path from a signal measurement and control system to a quantum chip, so that one signal channel led out from the signal measurement and control system can provide signals for a plurality of ports of the quantum chip.
Fig. 3 is a schematic structural diagram of a superconducting radio frequency switch according to an embodiment of the present application.
Referring to fig. 3, the present application provides a superconducting radio frequency switch, a quantum computing integrated component and a quantum computer, to solve the deficiencies in the prior art, the superconducting radio frequency switch, the quantum computing integrated component and the quantum computer form a radio frequency signal transmission line 3 on a substrate, and construct a part of a signal transmission path in the radio frequency signal transmission line 3 as a superconducting nano transmission line 35, two ends of the superconducting nano transmission line 35 are connected to a dc source by a power supply transmission line 4, the dc source is used for controlling the state of the superconducting nano transmission line 35 to switch between a superconducting state and a non-superconducting state by providing a current exceeding the critical current of the superconducting nano transmission line 35 to be applied to the superconducting nano transmission line 35 (i.e. the dc source is in a first state) and a current below the critical current of the superconducting nano transmission line 35 to be applied to the superconducting nano transmission line 35 (i.e. the dc source is in a second state) to further affect the transmission of the radio frequency signal on the radio frequency signal transmission line 3, finally, the on and off of the signal transmission on the radio frequency signal transmission line 3 are realized.
Referring to fig. 3, an embodiment of the present application provides a superconducting radio frequency switch, including a radio frequency signal transmission line 3 formed on a substrate and a power supply transmission line 4 formed on the substrate, wherein:
the radio frequency signal transmission line 3 comprises an input line 31, an output line 32 and a superconducting nano transmission line 35, wherein one end of the superconducting nano transmission line 35 is connected with the input line 31, and the other end of the superconducting nano transmission line 35 is connected with the output line 32, the critical temperature of the superconducting nano transmission line 35 is below 15K, the superconducting nano transmission line 35 can be directly connected with the input line 31 and the output line 32 or indirectly connected through other circuit structures, the input line 31 is a circuit structure for introducing radio frequency signals, the output line 32 is a circuit structure for outputting radio frequency signals, and an external signal cable connector (for example, an SMA or SMP connector) can be connected with the input line 31 or the output line 32 in a bonding mode;
the power supply transmission line 4 is used for connecting two ends of the superconducting nano transmission line 35 with a direct current source so as to ensure that the direct current source can provide output current transmitted to the superconducting nano transmission line 35; and the state of the direct current source comprises: a first state in which the output current exceeds the critical current of the superconducting nano-transmission line 35, and a second state in which the output current is lower than the critical current.
The radio frequency signal transmission line 3 in the embodiment of the present application may be in the form of a coplanar waveguide transmission line or a microstrip line structure, for example, in the form of a microstrip structure, the substrate includes a ground layer 1 and a dielectric layer 2 formed on the ground layer 1, the dielectric layer 2 may be magnesium oxide or silicon dioxide, for example, a first surface of the dielectric layer 2 is used for constructing the radio frequency signal transmission line 3, and a second surface opposite to the first surface is formed with a grounded metal layer, that is, the ground layer 1.
Compared with the prior art, in the embodiment provided by the present application, a part of the signal transmission path in the radio frequency signal transmission line 3 is configured as the above-mentioned superconducting nano transmission line 35, the critical temperature of the superconducting nano transmission line 35 is below 15K, and the superconducting nano transmission line 35 is connected to two ends of the dc source through the formed power transmission line 4, so that the current on the superconducting nano transmission line 35 can be switched between two states of exceeding the critical current and being below the critical current by adjusting the output current output from the dc source to the superconducting nano transmission line 35 in a low-temperature working environment (for example, a 4K temperature region in a dilution refrigerator), when the current on the superconducting nano transmission line 35 is below the critical current, the superconducting nano transmission line is in a superconducting state, at this time, the resistance of the superconducting nano transmission line is zero, and when the current on the superconducting nano transmission line 35 exceeds the critical current, the superconducting nano transmission line 35 is in a non-superconducting state (i.e., a resistance state), and thus, the superconducting nano transmission line 35 is switched between a superconducting state and a non-superconducting state, thereby realizing the control of the on-off of the radio frequency signal transmission.
In some embodiments of the present application, when the output current of the dc source exceeds the critical current of the superconducting nano transmission line 35, the impedance of the superconducting nano transmission line 35 exceeds a predetermined impedance, so that the impedance of the superconducting nano transmission line 35 after quenching changes greatly, and the impedance mismatch degree is high, thereby ensuring that the radio frequency signal switching function is implemented, for example, the predetermined impedance is any value of 1000 Ω and greater than 1000 Ω, so as to ensure that the impedance of the superconducting nano transmission line 35 is greater than 1000 Ω.
In other embodiments of the present application, when the output current of the dc source exceeds the critical current of the superconducting nano transmission line 35, the isolation of the superconducting nano transmission line 35 exceeds a preset isolation, and the isolation changes greatly, so that the radio frequency signal of the superconducting nano transmission line 35 is completely disconnected after quenching, for example, the preset isolation may be any value between 50dB and more than 50dB, and the isolation of the superconducting nano transmission line 35 exceeds 50 dB.
In some embodiments of the present application, the critical current density of the superconducting nano-transmission line 35 is no more than 10MA/cm2Illustratively, the concentration can be selected to be 0-10 MA/cm2Any of these values, the radio frequency switch constructed using the superconducting nano-transmission line 35 having a low critical current density has low power consumption. In some embodiments of the present application, the material of the superconducting nano transmission line 35 is a superconducting compound containing a metal element and a nonmetal element, for example, TaN or NbN in the embodiments of the present application. In the embodiment of the application, the length and the width of the TaN superconducting nano transmission line can be changed according to the requirements of the frequency band, the power consumption and the like of the transmitted radio frequency signal, and the TaN superconducting nano transmission line is used for exampleThe thickness of the transmission line is 100-250nm, the width is 100-1000 nm, the length is 2-20 um, the superconducting transition temperature of the TaN superconducting nano transmission line is about 7K, the resistance of the TaN superconducting nano transmission line is higher than 1000 ohms in a non-superconducting state, the critical current of the TaN superconducting nano transmission line is less than 50uA, the power consumption is less than 2.5mW, and the power consumption is far less than that of a conventional radio frequency switch.
In some embodiments of the present application, the radio frequency signal transmission line 3 further comprises a first impedance transformation circuit between the input line 31 and the superconducting nano transmission line 35, and a second impedance transformation circuit between the superconducting nano transmission line 35 and the output line 32. Illustratively, the first impedance transformation circuit and the second impedance transformation circuit are both impedance transformation lines, and as shown in fig. 3, the first impedance transformation circuit is configured as a first impedance transformation line 33, the second impedance transformation circuit is configured as a second impedance transformation line 34, the first impedance transformation line 33 may be configured according to the impedance matching requirement when a radio frequency signal is transmitted between the input line 31 and the superconducting nano transmission line 35, and the second impedance transformation line 34 may be configured according to the impedance matching requirement when a radio frequency signal is transmitted between the superconducting nano transmission line 35 and the output line 32. In some examples of the present application, the first impedance transformation line 33 and the second impedance transformation line 34 are both 1/4 wavelength impedance transformation lines.
In order to isolate the dc source and prevent the dc output from the dc source from being transmitted along the input line 31 and/or the output line 32, a capacitive circuit structure is constructed in some embodiments of the present application, and the capacitive circuit structure may be constructed on the input line 31 and the output line 32, or at a connection between the input line 31 and another circuit structure on the rf signal transmission line 3 and a connection between the output line 32 and another circuit structure on the rf signal transmission line 3. For convenience of description, the capacitor circuit structure for blocking the dc output from the dc source from being transmitted along the input line 31 is referred to as a first capacitor, the capacitor circuit structure for blocking the dc output from the dc source from being transmitted along the output line 32 is referred to as a second capacitor, and the positions and the structural forms of the capacitor circuit structures of the first capacitor and the second capacitor are not limited to the above description as long as the connection point between the power supply transmission line 4 and the radio frequency signal transmission line 3 is located between the first capacitor and the second capacitor.
In some embodiments of the present application, the capacitive circuit structure is built on the input line 31 and the output line 32. As further described below in conjunction with the first capacitor on the input line 31, as shown in fig. 3 and 4, the input line 31 is constructed to include a first input line 311 and a second input line 312, the first input line 311 is used for introducing a radio frequency signal, one end of the second input line 312 receives the radio frequency signal on the first input line, and the other end outputs and transmits the received radio frequency signal to the superconducting nano transmission line 35, a portion of the first input line 311 and a portion of the second input line 312 form a stack, and an insulating medium layer 313 is formed between two layers of the stacked portion of the first input line 311 and the portion of the second input line 312, so that the first capacitor is formed to include a three-layer stack structure of the portion of the first input line 311, the insulating medium layer 313 and the portion of the second input line 312. Similarly, the output line 32 is configured to include a first output line 321 and a second output line 322, the second output line 322 is in signal connection with the superconducting nano-transmission line 35, the first output line 321 is used for outputting the radio-frequency signal transmitted through the second output line 322, a part of the first output line 321 and a part of the second output line 322 are stacked, an insulating medium layer is formed between two layers of the stacked part of the first output line 321 and the stacked part of the second output line 322, and the formed second capacitor is a three-layer stacked structure including a part of the first output line 321, the insulating medium layer and a part of the second output line 322. The power transmission line 4 includes a first power transmission line 41 and a second power transmission line 42, one end of the first power transmission line 41 is connected to the second input line 312, and one end of the second power transmission line 42 is connected to the second output line 322, so that the first capacitor and the second capacitor can ensure that the dc current provided by the dc source does not flow through the first input line 311 and the first output line 321.
In order to isolate the dc source and prevent the dc output from the dc source from being transmitted along the input line 31 and/or the output line 32, in other embodiments of the present application, capacitive coupling is optionally performed between the input line 31 and the first impedance transformation line 33 and between the output line 32 and the second impedance transformation line 34, and the connection between the power transmission line 4 and the rf signal transmission line 3 is located between two capacitively coupled circuit structures. In one embodiment, the capacitance is a parallel plate capacitance. Illustratively, the circuit structure of the capacitive coupling between the input line 31 and the first impedance transformation line 33 includes a portion of the input line 31, a portion of the first impedance transformation line 33, and an insulating medium layer between the portion of the input line 31 and the portion of the first impedance transformation line 33, and the circuit structure of the capacitive coupling between the output line 32 and the second impedance transformation line 34 is similar thereto.
In some embodiments of the present application, the power supply transmission line 4 forms a total reflection to the rf signal, and the power supply transmission line is configured to have a high impedance to avoid the rf signal from being transmitted along the power supply transmission line 4. Illustratively, the power supply transmission line 4 includes a first power supply transmission line 41 and a second power supply transmission line 42, one end of the first power supply transmission line 41 is connected to the second input line 312, one end of the second power supply transmission line 42 is connected to the second output line 322, and the other end of the first power supply transmission line 41 and the other end of the second power supply transmission line 42 are respectively connected to two poles of the dc source, so as to enable the dc source to provide dc current for the superconducting nano transmission line 35. It should be noted that the dc source may be a constant current source, a constant voltage source, or any power supply component that can provide a certain dc current, as long as the power supply component is in a state including the first state and the second state, where the first state is a state where the output current provided to the superconducting nano transmission line 35 exceeds the critical current of the superconducting nano transmission line 35, and the second state is a state where the output current provided to the superconducting nano transmission line 35 is lower than the critical current.
In some embodiments of the present application, the first power transmission line 41 and the second power transmission line 42 are both non-superconducting metals, such as gold, or superconducting materials with critical transition currents higher than the critical current.
In some embodiments of the present application, a first gold film 36 is formed on an input terminal of the input line 31, a second gold film 37 is formed on an output terminal of the output line 32, and a third gold film 43 is formed on a connection terminal for connection with a dc source on the first power supply transmission line 41, and a fourth gold film 44 is formed on a connection terminal for connection with a dc source on the second power supply transmission line 42.
Fig. 5 is a schematic diagram of a quantum computing integrated component provided in an embodiment of the present application.
Referring to fig. 5 in combination with fig. 1, fig. 2, fig. 3, and fig. 4, an embodiment of the present application further provides a quantum computing integrated component, including:
the quantum chip is provided with a plurality of quantum bits and a signal port, and the signal port is used for receiving a quantum state regulation signal or a quantum state reading signal aiming at each quantum bit or outputting a feedback signal aiming at the quantum state reading signal;
a signal measurement and control system for generating a quantum state regulation signal and a quantum state read signal for each of the qubits and collecting a feedback signal for the quantum state read signal; and
in the above-mentioned embodiments of the present application, the input line is connected to the signal measurement and control system through a first group of transmission lines, the output line is connected to the quantum chip through a second group of transmission lines, the types of signals transmitted by the first group of transmission lines and the second group of transmission lines are the same and are one of the quantum state regulation signal, the quantum state reading signal, and the feedback signal, and the number of transmission lines of the first group of transmission lines is smaller than the number of transmission lines of the second group of transmission lines. In some embodiments of the present application, the first set of transmission lines has 1 transmission line.
In the embodiment of the application, a superconducting radio frequency switch is arranged between a quantum chip and a signal measurement and control system, one signal channel of the signal measurement and control system corresponds to a plurality of ports of the quantum chip, the number of transmission lines can be reduced, specifically, the transmission lines in a first group of transmission lines are marked as first transmission lines, the transmission lines in a second group of transmission lines are marked as second transmission lines, one first transmission line is connected with one signal channel of the signal measurement and control system, a plurality of second transmission lines are correspondingly connected with a plurality of ports of the quantum chip, the other ends of the plurality of second transmission lines are connected to a superconducting radio frequency switch assembly, the superconducting radio frequency switch assembly comprises a plurality of superconducting radio frequency switches to ensure that the second transmission lines are connected with the superconducting radio frequency switches in a one-to-one correspondence manner, and the second transmission lines are connected with the first transmission lines through respective superconducting radio frequency switches, therefore, one signal channel of the signal measuring and controlling system corresponds to a plurality of ports of the quantum chip, and in the embodiment of the application, the superconducting radio frequency switch assembly can be arranged in a temperature area adjacent to or next to the working temperature area of the quantum chip so as to reduce the wiring in the dilution refrigerator.
The embodiment of the present application further provides a quantum computer, including the superconducting radio frequency switch provided in the embodiment of the present application, or including the quantum computing integrated component provided in the embodiment of the present application.
Here, it should be noted that: the superconducting radio frequency switch in the quantum computer has a structure similar to that of the embodiment of the superconducting radio frequency switch, and has the same beneficial effects as the embodiment of the superconducting radio frequency switch; the quantum computing integrated component in the quantum computer has a similar structure to that in the quantum computing integrated component embodiment, and has the same beneficial effects as the quantum computing integrated component embodiment, and therefore, the description thereof is omitted. For technical details that are not disclosed in the quantum computer embodiments of the present application, those skilled in the art should refer to the description of the foregoing superconducting radio frequency switch embodiment and the description of the foregoing quantum computing integrated component embodiment to understand that, for brevity, detailed description is omitted here.
Fabrication of superconducting radio frequencies provided by embodiments of the present application may require deposition of one or more materials, such as superconductors, dielectrics, and/or metals. Depending on the materials selected, these materials may be deposited using deposition processes such as chemical vapor deposition, physical vapor deposition (e.g., Evaporation or Sputtering), or epitaxial techniques, among others, including, by way of example, Ion Beam Assisted Deposition (IBAD), vacuum Evaporation coating (Evaporation), Molecular Beam Epitaxy (MBE), Pulsed Laser Deposition (PLD), Chemical Vapor Deposition (CVD), sol-gel, and Magnetron sputter coating (Magnetron Sputtering). A superconducting radio frequency switch described in embodiments of the present application may require removal of one or more materials from the device during the manufacturing process. Depending on the material to be removed, the removal process may include, for example, a wet etching technique, a dry etching technique, or a lift-off (lift-off) process. The materials forming the circuit elements described herein may be patterned using known exposure (lithographical) techniques, such as photolithography or electron beam exposure.
The construction, features and functions of the present application are described in detail in the embodiments illustrated in the drawings, which are only preferred embodiments of the present application, but the present application is not limited by the drawings, and all equivalent embodiments that can be modified or changed according to the idea of the present application are within the scope of the present application without departing from the spirit of the present application.
Claims (14)
1. A superconducting radio frequency switch, comprising:
a radio frequency signal transmission line formed on a substrate, the radio frequency signal transmission line including an input line, an output line, and a superconducting nano transmission line having one end connected to the input line and the other end connected to the output line, the superconducting nano transmission line having a critical temperature of 15K or less; and
the power supply transmission line is formed on the substrate and used for connecting two ends of the superconducting nano transmission line with a direct current source; and the state of the direct current source comprises: a first state in which an output current exceeds a critical current of the superconducting nano-transmission line, and a second state in which an output current is lower than the critical current.
2. The superconducting radio frequency switch of claim 1, wherein when an output current of the dc source exceeds a critical current of the superconducting nano transmission line, an impedance of the superconducting nano transmission line is 1000 Ω or more.
3. The superconducting radio frequency switch of claim 1, wherein the superconducting nano transmission line has an isolation of more than 50dB when the output current of the dc source exceeds the critical current of the superconducting nano transmission line.
4. The superconducting radio frequency switch of claim 1, wherein the critical current density of the superconducting nano-transmission line is no more than 10MA/cm2。
5. The superconducting radio frequency switch of claim 1, wherein the radio frequency signal transmission line further comprises a first impedance transformation circuit between the input line and the superconducting nano-transmission line, and a second impedance transformation circuit between the superconducting nano-transmission line and the output line.
6. The superconducting radio frequency switch of claim 5, wherein the first impedance transformation circuit and the second impedance transformation circuit are impedance transformation lines.
7. The superconducting radio frequency switch of claim 6, wherein the impedance transformation line is an 1/4 wavelength impedance transformation line.
8. The superconducting radio frequency switch of claim 5, wherein capacitive coupling is provided between the input line and the first impedance transformation circuit and between the output line and the second impedance transformation circuit.
9. The superconducting radio frequency switch of claim 8, wherein the capacitance is a parallel plate capacitance.
10. The superconducting radio frequency switch of claim 9, wherein the parallel-plate capacitance includes a portion of the input line, a portion of the first impedance transformation circuit, and a dielectric layer between the portion of the input line and the portion of the first impedance transformation circuit.
11. A superconducting radio frequency switch according to any one of claims 1-10, wherein the power transmission line totally reflects a radio frequency signal.
12. A quantum computing integrated assembly, comprising:
the quantum chip is provided with a plurality of quantum bits and a signal port, and the signal port is used for receiving a quantum state regulation signal or a quantum state reading signal aiming at each quantum bit or outputting a feedback signal aiming at the quantum state reading signal;
a signal measurement and control system for generating a quantum state regulation signal and a quantum state read signal for each of the qubits and collecting a feedback signal for the quantum state read signal; and
the superconducting radio frequency switch of any one of claims 1-10, the input line being connected to the signal measurement and control system through a first set of transmission lines, the output line being connected to the quantum chip through a second set of transmission lines, the first set of transmission lines and the second set of transmission lines transmitting the same type of signal and being one of the quantum state regulating signal, the quantum state read signal, the feedback signal, and the first set of transmission lines having a smaller number of transmission lines than the second set of transmission lines.
13. The quantum computing integrated assembly of claim 12, wherein the first set of transmission lines has 1 transmission line.
14. A quantum computer comprising the superconducting radio frequency switch of any of claims 1-11, or comprising the quantum computing integrated component of any of claims 12-13.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114865264A (en) * | 2022-04-06 | 2022-08-05 | 南京大学 | Double-superconducting-wire coupler |
| CN115204402A (en) * | 2022-06-24 | 2022-10-18 | 深圳国际量子研究院 | Superconducting quantum chip connecting structure and connecting method |
| CN115913207A (en) * | 2021-09-29 | 2023-04-04 | 合肥本源量子计算科技有限责任公司 | Superconducting radio frequency switch, quantum computing integrated component and quantum computer |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115913207A (en) * | 2021-09-29 | 2023-04-04 | 合肥本源量子计算科技有限责任公司 | Superconducting radio frequency switch, quantum computing integrated component and quantum computer |
| CN115913207B (en) * | 2021-09-29 | 2024-08-13 | 本源量子计算科技（合肥）股份有限公司 | Superconducting radio frequency switch, quantum computing integrated component and quantum computer |
| CN114865264A (en) * | 2022-04-06 | 2022-08-05 | 南京大学 | Double-superconducting-wire coupler |
| CN114865264B (en) * | 2022-04-06 | 2022-11-11 | 南京大学 | Double-superconducting-wire coupler |
| CN115204402A (en) * | 2022-06-24 | 2022-10-18 | 深圳国际量子研究院 | Superconducting quantum chip connecting structure and connecting method |
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