CN216073589U - Low-emissivity coated glass - Google Patents
Low-emissivity coated glass Download PDFInfo
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- CN216073589U CN216073589U CN202121141182.6U CN202121141182U CN216073589U CN 216073589 U CN216073589 U CN 216073589U CN 202121141182 U CN202121141182 U CN 202121141182U CN 216073589 U CN216073589 U CN 216073589U
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Abstract
The application is applicable to the technical field of glass, and provides low-emissivity coated glass which comprises a glass substrate and a silicon-zirconium nitride layer, wherein the silicon-zirconium nitride layer is laminated and combined on the surface of the glass substrate; the functional film layer is combined on the outer surface of the silicon nitride zirconium layer in a laminating manner, the silicon nitride zirconium layer and the functional film layer are sequentially deposited on the surface of the glass substrate by adopting a vacuum magnetron sputtering deposition method, and on the premise of reducing the radiant emittance of the coated glass, the reflectivity and the transmittance of the coated glass to visible light are reduced, so that the effect of low reflection and low transmittance is realized.
Description
Technical Field
The application relates to the field of glass, in particular to low-emissivity coated glass.
Background
Because the glass has good thermal properties and is widely applied, with the gradual improvement of the living standard of people and the promulgation of increasingly strict energy-saving policies, the common low-emissivity coated glass cannot meet the requirements of many regions on the energy saving aspect of the glass, particularly in the south China, the Shenzhen market definitely stipulates that the outdoor reflectivity does not exceed 20% in order to reduce light pollution, but has an extremely high standard for the sun-shading coefficient. However, the reflection of the current low-emissivity coated glass is increased when the shading coefficient is low, and the transmittance of the corresponding glass is high and the shading coefficient is also increased when the reflection is low. Therefore, in order to achieve the effect of low reflection and low transmittance, the gray glass is often selected to replace the white glass for film coating, so that the effect of low reflection and low transmittance is achieved. However, the low-emissivity coating has high requirement on the freshness of the substrate, and needs to be made by original sheets produced within three months, but the original sheet manufacturers of the domestic gray glass usually produce the substrate once a year, so that the quality defects of mildewing, oxidation and the like of the substrate are easily caused by selecting the gray glass, the manufacturing cost is greatly increased, and the supply has high resistance.
SUMMERY OF THE UTILITY MODEL
The application aims to provide low-emissivity coated glass, and aims to solve the technical problem that the low-emissivity white glass in the prior art cannot realize low reflectivity and low transmittance of visible light.
In order to achieve the purpose, the technical scheme adopted by the application is as follows:
provided is a low-emissivity coated glass comprising:
a glass substrate;
a zirconium silicon nitride layer laminated and bonded to a surface of the glass substrate;
and the functional film layer is laminated and combined on the outer surface of the silicon zirconium nitride layer.
Further, the glass substrate is a white glass substrate.
Further, the thickness of the silicon zirconium nitride layer is 2-5 nm.
Further, the functional film layer is formed by laminating at least one unit functional film layer, wherein the unit functional film layer comprises a dielectric layer, a functional layer, a barrier layer and a protective layer, and the dielectric layer, the functional layer, the barrier layer and the protective layer are sequentially laminated and combined along the extending direction departing from the glass substrate.
Further, the functional film layer is formed by laminating two unit functional film layers, and comprises a first dielectric layer, a first functional layer, a first barrier layer, a first protective layer, a second dielectric layer, a second functional layer, a second barrier layer and a second protective layer which are sequentially laminated and combined.
Further, the thickness of the dielectric layer is 20-80 nm.
Further, the thickness of the functional layer is 1-10 nm.
Further, the thickness of the barrier layer is 1-5 nm; and/or
The thickness of the protective layer is 3-8 nm.
Further, an outer dielectric layer and a wear-resistant layer are sequentially stacked on the outer surface of the functional film layer.
Further, the thickness of the outer dielectric layer is 25-35 nm; and/or
The thickness of the wear-resistant layer is 2-5 nm.
The application provides a low radiation coated glass's beneficial effect lies in:
on the first hand, the low-emissivity coated glass adds the silicon nitride zirconium layer between the glass substrate and the functional film layer, so that the absorption rate of the glass substrate to visible light is reduced, meanwhile, the reflectivity and the transmittance of the glass substrate to the visible light are reduced, and the effect of low reflection and low transmittance is achieved;
further, a silicon nitride zirconium layer is additionally stacked between the glass substrate and the functional film layer, the glass substrate adopts white glass, the low-reflection low-transmittance effect even superior to gray glass can be achieved, the gray glass is replaced by the white glass, the problems that the gray glass is in short supply and the glass slide is not fresh and easy to mildew are solved, and the product quality is improved under the condition that the coated glass is ensured to be low in reflection and low in transmittance.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a functional film provided in an embodiment of the present application;
FIG. 2 is a schematic view of a film structure of a low-E coated glass provided in an embodiment of the present application;
FIG. 3 is a schematic view of a film structure of a low-E coated glass provided in another embodiment of the present application;
wherein, in the figures, the respective reference numerals:
the manufacturing method comprises the following steps of 1-a glass substrate, 2-a silicon zirconium nitride layer, 3-a first dielectric layer, 4 a first functional layer, 5-a first barrier layer, 6-a first protective layer, 7-a second dielectric layer, 8-a second functional layer, 9-a second barrier layer, 10-a second protective layer, 11-an outer dielectric layer, 12-a wear-resistant layer, 13-a third dielectric layer, 14-a third functional layer, 15-a third barrier layer and 16-a third protective layer.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application more clearly apparent, the present application is further described in detail below with reference to the embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
In this application, the term "and/or" describes an association relationship of associated objects, meaning that there may be three relationships, e.g., a and/or B, which may mean: a is present alone, A and B are present simultaneously, and B is present alone. Wherein A and B can be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
In the present application, "at least one" means one or more, "a plurality" means two or more. "at least one of the following" or similar expressions refer to any combination of these items, including any combination of the singular or plural items. For example, "at least one (one) of a, b, or c," or "at least one (one) of a, b, and c," may each represent: a, b, c, a-b (i.e., a and b), a-c, b-c, or a-b-c, wherein a, b, and c may be single or plural, respectively.
It should be understood that, in various embodiments of the present application, the sequence numbers of the above-mentioned processes do not mean the execution sequence, some or all of the steps may be executed in parallel or executed sequentially, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present application.
The terminology used in the embodiments of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used in the examples of this application and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
The weight of the related components mentioned in the description of the embodiments of the present application may not only refer to the specific content of each component, but also represent the proportional relationship of the weight among the components, and therefore, the content of the related components is scaled up or down within the scope disclosed in the description of the embodiments of the present application as long as it is scaled up or down according to the description of the embodiments of the present application. Specifically, the mass described in the specification of the embodiments of the present application may be a mass unit known in the chemical industry field such as μ g, mg, g, kg, etc.
The terms "first" and "second" are used for descriptive purposes only and are used for distinguishing purposes such as substances from one another, and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. For example, a first XX may also be referred to as a second XX, and similarly, a second XX may also be referred to as a first XX, without departing from the scope of embodiments of the present application. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.
The reflection of the current low-emissivity coated glass is increased along with the low shading coefficient, and the transmittance of the corresponding glass is increased and the shading coefficient is also increased and is also high due to the low reflection. Therefore, in order to achieve the effect of low reflection and low transmittance, the gray glass is often selected to replace the white glass for film coating, so that the effect of low reflection and low transmittance is achieved. The low-radiation coating has higher requirement on the freshness of the substrate, and needs to adopt original sheets produced in three months, but the original sheet manufacturers of the domestic gray glass usually produce the substrate once a year, so that the problems of quality defects such as mildewing and oxidation of the substrate and the like are easily caused by selecting the gray glass, the manufacturing cost is greatly increased, and the supply has larger resistance. The inventors of the present application have made an effort to simultaneously reduce the reflectance and transmittance of low-emissivity white glass, and in the prior art, those skilled in the art have been devoted to research on coating glass with a zirconium material, wherein zirconium oxide and zirconium nitride have high abrasion resistance and corrosion resistance so as to be coated on the outermost layer of glass as the abrasion resistant layer 12, and have not recognized that mixing zirconium nitride with silicon nitride can be used to reduce the reflectance and transmittance of low-emissivity glass to visible light. The inventor of the utility model uses silicon-zirconium adulterant as a target material, sputters the silicon-zirconium adulterant to the surface of a glass substrate in the nitrogen atmosphere to form a silicon-zirconium nitride layer 2, and then sequentially deposits a functional film, so that the low-radiation film-coated white glass can simultaneously reduce the reflectivity and the transmittance to visible light, achieve the low-reflection and low-transmittance effect even superior to gray glass, reduce the manufacturing cost, and improve the production efficiency and the product quality.
A first aspect of the embodiments of the present application provides a low-emissivity coated glass, which has a structure as shown in fig. 1 to 3, and includes:
a glass substrate 1; a zirconium silicon nitride layer 2 laminated and bonded to the surface of the glass substrate 1; and a functional film layer laminated and bonded to the outer surface of the silicon zirconium nitride layer 2.
Wherein, the glass substrate 1 is a white glass substrate, the silicon zirconium nitride layer 2 is a mixture of silicon nitride and zirconium nitride, and in the embodiment, the silicon zirconium mass ratio in the silicon zirconium nitride layer 2 is (60-66): (34-40), the inventor finds that the optical properties of the mixture of silicon nitride and zirconium nitride with different mass ratios are different greatly, and the ratio of silicon nitride to zirconium nitride is too large or too small, so that the reflectivity and the refractive index of the glass to visible light cannot be reduced simultaneously.
In the embodiment, the thickness of the silicon zirconium nitride layer 2 is 2-5nm, the technical effect of the utility model cannot be achieved due to too thin thickness of the silicon zirconium nitride layer 2, and the crystal lattice defect is easily caused due to crystallization of the film growth structure due to too thick thickness.
It should be noted that, in the embodiment, the functional film layer is formed by stacking at least one unit functional film layer, where the unit functional film layer includes a dielectric layer, a functional layer, a barrier layer, and a protective layer, and the dielectric layer, the functional layer, the barrier layer, and the protective layer are sequentially stacked and combined in the extending direction away from the glass substrate, and the bonding strength between the electrolyte layer and the silicon zirconium nitride layer 2 and the functional layer is high, so that the bonding between the film layers is more stable, the barrier layer can block metal ion migration, and the functional layer is prevented from being affected by outer metal ion migration to reduce radiation performance, and the protective layer is used to protect the functional layer from being oxidized, prolong the storage time, and increase the adhesion between the film layers.
In an embodiment, the dielectric layer is made of TiO2、ZnAl2O4、ZnO2、ZnSnOx、SnO2And Si3N4One or more of; and/or the thickness of the dielectric layer is 20-80 nm; and/or the functional layer is made of Ag and/or Au; and/or the functional layer has a thickness of 1 to 10 nm; and/or the barrier layer is made of Ni, Ti, Cr or NiCrOxAnd NiCrNxOne or more of; and/or the thickness of the barrier layer is 1-5 nm; and/or the protective layer is made of AZO; and/or the thickness of the protective layer is 3-8nm, the optical effect generated after different materials are superposed is different, and the color of the coated glass is adjusted through the selection of the materials and the control of the thickness of the film layer, so that the reflectivity and the transmittance of the glass to visible light are reduced simultaneously.
In some embodiments, the low-emissivity coated glass further comprises a wear-resistant layer 12 deposited on the surface of the functional film layer, an outer dielectric layer 11 is further deposited between the wear-resistant layer 12 and the functional film layer, the thickness of the outer dielectric layer 11 is 25-35nm, the wear-resistant layer 12 is made of zirconia, the thickness of the wear-resistant layer 12 is 2-5nm, and the material of the outer dielectric layer 11 is ZnAl2O4、ZnO2、ZnSnOx、SnO2And Si3N4Zirconia has high strength, high hardness, oxidation resistance and corrosion resistance, and the zirconia is used as the wear-resistant layer 12, so that the coated glass can be prevented from being scratched or corroded, the quality of the coated glass is ensured, and the service life of the coated glass is prolonged.
In some embodiments, the low-emissivity coated glass includes a single functional film layer, as shown in fig. 1, which includes a first dielectric layer 3, a first functional layer 4, a first barrier layer 5, and a first protective layer 6, which are sequentially deposited and stacked.
In some embodiments, the low-emissivity coated glass comprises two unit functional film layers, as shown in fig. 2, the low-emissivity coated glass comprises a zirconium silicon nitride layer 2, a first dielectric layer 3, a first functional layer 4, a first barrier layer 5, a first protective layer 6, a second dielectric layer 7, a second functional layer 8, a second barrier layer 9, a second protective layer 10, an outer dielectric layer 11 and an abrasion-resistant layer 12 which are sequentially deposited on a glass substrate 1, wherein the material of the first dielectric layer 3 is preferably Si3N4And SnO2The deposition thickness is 25-32 nm; the material of the first functional layer 4 is preferably Ag, and the deposition thickness is 2-5 nm; the material of the first barrier layer 5 is preferably NiCrNxThe deposition thickness is 1-3 nm; the first protective layer 6 is made of AZO material, and the deposition thickness is 3-8 nm; the material of the second dielectric layer 7 is preferably Si3N4And SnO2The deposition thickness is 60-80 nm; the material of the second functional layer 8 is preferably Ag, and the deposition thickness is 2-8 nm; the material of the second barrier layer 9 is preferably NiCrNxThe deposition thickness is 1-3 nm; the second protective layer 10 is made of AZO material and is deposited to a thickness of 3-8 nm; the material of the outer dielectric layer 11 is preferably Si3N4 and SnO2, and the deposition thickness is 25-35 nm; the wear-resistant layer 12 is made of zirconia material and has the thickness of 2-5nm, and the effect of reducing the radiance is strengthened by overlapping the two unit functional film layers, so that the radiance of the coated glass is further reduced.
In other embodiments, the low-emissivity coated glass includes three unit functional film layers, as shown in fig. 3, the low-emissivity coated glass includes a zirconium silicon nitride layer 2, a first dielectric layer 3, a first functional layer 4, a first barrier layer 5, a first protective layer 6, a second dielectric layer 7, a second functional layer 8, a second barrier layer 9, a second protective layer 10, a third dielectric layer 13, a third functional layer 14, a third barrier layer 15, a third protective layer 16, an outer dielectric layer and an abrasion resistant layer 12, which are sequentially deposited on a glass substrate 1.
In a second aspect, the present application further provides a method for preparing low-emissivity coated glass according to the above embodiment of the present invention, for preparing the low-emissivity coated glass, including the following steps:
s1, providing a glass substrate 1;
s2: depositing a silicon nitride zirconium layer 2 on the surface of the glass substrate 1;
s3: and depositing a functional film layer on the surface of the silicon zirconium nitride layer 2.
The materials, thicknesses, etc. of the glass substrate 1, the silicon zirconium nitride layer 2, and the functional film layer in step S01 are the materials and thicknesses of the glass substrate 1, the silicon zirconium nitride layer 2, and the functional film layer included in the above low-emissivity coated glass, respectively, and are not described herein again for brevity. Wherein, the deposition among the film layers can adopt a vacuum magnetron sputtering deposition method, a chemical vapor deposition method or a sol-gel method.
In some embodiments, the silicon zirconium nitride layer 2 is deposited by vacuum magnetron sputtering, and argon-nitrogen mixed gas is used as working gas to improve the sputtering rate; the target material is a silicon-zirconium doped material, the weight percentage of silicon in the silicon-zirconium doped material is 60-66%, the weight percentage of zirconium in the silicon-zirconium doped material is 34-40%, it needs to be noted that the mass ratio of silicon to zirconium sputtered and deposited on the glass substrate by the silicon-zirconium doped material is consistent with the mass ratio of silicon to zirconium in the target material, the price of the silicon-zirconium doped material target material is low, the processing thickness of the target material can reach 17mm, the target changing period is long, frequent target changing is not needed, and the operation is simple.
In some embodiments, all the film layers are deposited by vacuum magnetron sputtering deposition, the deposition speed is high, the obtained film has high purity, good density and good film forming uniformity, and the combination of all the layers is good.
It should be noted that before the sputtering deposition of the coating, the vacuum magnetron sputtering device needs to be ensuredThe film coating chamber has good background vacuum background, and the vacuum degree is kept at 1 multiplied by 10-6-3×10-6mbar, pressure during sputtering at 3 × 10-3-5×10-3In the mbar interval, the equipment is provided with an oil-free vacuum pump air exhaust system, the rotating cathode is provided with a pulse alternating current power supply, the use power of the equipment is controlled at 30-80KW/h, the plane cathode is provided with a pulse direct current power supply, the use power of the equipment is controlled at 1-30KW/h, and the frequency is all in the interval of 40-50 KHz. The nitride deposited by the rotary cathode sputtering is formed by reactive sputtering of mixed gas of argon and nitrogen, and the deposited oxide is formed by reactive sputtering of mixed gas of argon and oxygen; the metal and metal alloy compound sputtered and deposited by the pulse direct current power supply is formed by sputtering pure argon, and each film can be deposited by a single substance to form a thin film or can be sequentially deposited by multiple layers of substances.
In some embodiments, the method for preparing low-emissivity coated glass further comprises the following steps: s4: and sequentially depositing an outer dielectric layer 11 and an abrasion-resistant layer 12 on the surface of the functional film layer. The material and thickness of the outer dielectric layer 11 and the wear-resistant layer 12 are the same as those of the outer dielectric layer 11 and the wear-resistant layer 12 contained in the above low-emissivity coated glass, and the method for forming the outer dielectric layer 11 and the wear-resistant layer 12 may be a conventional forming method.
In order that the details of the above-described implementations and operation of the present application will be readily understood by those skilled in the art, and the progress made in the present application will be made significantly, the above-described embodiments will be illustrated below by way of example.
Example 1:
(1) cleaning and air-drying the glass substrate 1, wherein the glass substrate 1 is a white glass substrate;
(2) and (3) magnetron sputtering deposition of a silicon nitride zirconium layer 2 by using a medium-frequency power supply and a rotating cathode: the silicon-zirconium nitride layer 2 takes a silicon-zirconium doped material as a target material, and the weight ratio of silicon to zirconium in the target material is 63%: 37%, wherein the working gas is argon-nitrogen mixed gas, and the ratio is 1: 1.5, the sputtering thickness of the silicon zirconium nitride layer 2 is 2 nm.
(3) And (3) depositing a first dielectric layer 3 by using a medium-frequency power supply and a rotating cathode through magnetron sputtering: the first dielectric layer 3 is made of Si3N4And ZnO2Namely a silicon nitride layer and a zinc oxide layer, the target material has the use power of 100-150KW and 20-60KW respectively, the working gas is argon nitrogen and argon oxygen mixed gas respectively, and the ratio is 1: 1.5, the deposition thickness of the silicon nitride layer is 25nm, and the deposition thickness of the zinc oxide layer is 7 nm.
(4) And (3) depositing a first functional layer 4 by medium-frequency power supply and planar cathode magnetron sputtering: the material of the first functional layer 4 is Ag, namely a silver layer, the target material using power is 3-6KW, the working gas is pure argon, the working gas flow is 1200sccm, and the deposition thickness of the Ag layer is 5 nm.
(5) Depositing a first barrier layer 5 and a first protective layer 6 by medium-frequency power supply and planar cathode magnetron sputtering: the first barrier layer 5 is made of NiCrNXThe target material has the use power of 2-6KW, the working gas is pure argon, the flow of the working gas is 1200sccm, and the deposition thickness of the first barrier layer 5 is 3 nm; the first protective layer 6 is made of AZO material, the target material using power is 10-20KW, and the deposition thickness of the first protective layer 6 is 7 nm.
(6) And (3) depositing a second dielectric layer 7 by using a medium-frequency power supply and a rotating cathode through magnetron sputtering: the material of the second dielectric layer 7 is Si3N4And ZnO2Namely a silicon nitride layer and a zinc oxide layer, the target material use power is respectively 300-350 KW and 20-80KW, the working gas is respectively argon nitrogen and argon oxygen mixed gas, and the proportion is 1: 1.5, the deposition thickness of the silicon nitride layer is 75nm, and the deposition thickness of the zinc oxide layer is 5 nm.
(7) And (3) depositing a second functional layer 8 by medium-frequency power supply and planar cathode magnetron sputtering: the material of the second functional layer 8 is Ag, namely a silver layer, the target material using power is 5-8KW, the working gas is pure argon, the working gas flow is 1200sccm, and the deposition thickness of the Ag layer is 7 nm.
(8) Depositing a second barrier layer 9 and a second protective layer 10 by medium frequency power supply and planar cathode magnetron sputtering: the material of the second barrier layer 9 is NiCrNXThe target material has the power of 6-9KW, the working gas is pure argon, the flow of the working gas is 1200sccm, and the deposition thickness of the second barrier layer 9 is 1.5 nm; the second protective layer 10 is made of AZO material, the target material using power is 10-20KW, and the deposition thickness of the second protective layer 10 is 6 nm.
(9) Magnetron sputtering deposition with medium frequency power supply and rotating cathodeOuter dielectric layer 11: the outer dielectric layer 11 is made of Si3N4Namely a silicon nitride layer, the target material use power is respectively 100-150KW, the working gas is argon-nitrogen mixed gas, and the proportion is 1: 1.5, the silicon nitride layer was deposited to a thickness of 33 nm.
(10) And (3) magnetron sputtering deposition of a wear-resistant layer 12 by using a medium-frequency power supply and a rotating cathode: the wear-resistant layer 12 is made of zirconia, the target material is a zirconia target, the working gas is argon-oxygen mixed gas, and the ratio is 1: 1.5, the thickness of the deposited zirconia layer is 5 nm.
Example 2: the silicon-zirconium doping target material adopted in the silicon-zirconium nitride layer 2 has a silicon-zirconium weight ratio of 60%: 40% and the rest of the conditions were the same as in example 1.
Example 3: the silicon-zirconium doping target material adopted in the silicon-zirconium nitride layer 2 has a silicon-zirconium weight ratio of 66%: 34% and the rest of the conditions were the same as in example 1.
Example 4: the zirconium silicon nitride layer 2 was deposited to a thickness of 3nm, and the remaining conditions were the same as in example 1.
Example 5: the silicon zirconium nitride layer 2 was deposited to a thickness of 5nm, and the remaining conditions were the same as in example 1.
Example 6: the glass substrate 1 was a gray glass substrate, and the other conditions were the same as in example 1.
Example 7: the silicon zirconium nitride layer 2 was deposited to a thickness of 1nm, and the remaining conditions were the same as in example 1.
Example 8: the zirconium silicon nitride layer 2 was deposited to a thickness of 6nm, and the remaining conditions were the same as in example 1.
Example 9: the silicon-zirconium doping target material adopted in the silicon-zirconium nitride layer 2 has a silicon-zirconium weight ratio of 50%: 50% and the other conditions were the same as in example 1.
Example 10: the silicon-zirconium doping target material adopted in the silicon-zirconium nitride layer 2 has a silicon-zirconium weight ratio of 70%: 30% and the other conditions were the same as in example 1.
Comparative example 1: the silicon zirconium nitride layer 2 was not formed, and the other conditions were the same as in example 1.
Comparative example 2: the glass substrate 1 was a gray glass substrate without the silicon zirconium nitride layer 2, and the other conditions were the same as in example 1.
The product performance is as follows:
the photothermal properties of the examples and comparative examples are shown in Table 1, where the data were measured using a Perkinelmer lambda950, DataColor check 3 optical instrument, USA.
TABLE 1 Table of photothermal Properties of the examples and comparative examples
And (4) conclusion:
as shown in table 1: the emissivity of the examples 1-10 is less than 0.15 specified by national standard GBT18915.2, the coated glass is low-emissivity coated glass, and the emissivity of the examples 1-10 is less than that of the comparative example 1 and the comparative example 2, which shows that the technical scheme of the utility model can further reduce the emissivity of the coated glass.
As can be seen from comparative examples 1 and 2, the visible light transmittance and the visible light reflectance of the silicon zirconium layer-free white glass are far greater than those of the silicon zirconium layer-free gray glass; as can be seen from the examples 1, the comparative examples 2 and the comparative examples 2, the white glass deposited with the silicon zirconium nitride layer has the visible light transmittance and the visible light reflectance greatly reduced and smaller than those of the silicon zirconium nitride layer-free gray glass compared with the silicon zirconium nitride layer-free white glass; it can be seen from examples 1 and 6 that the visible light transmittance and reflectance of the white glass deposited with the silicon zirconium nitride layer are obviously lower than those of the gray glass deposited with the silicon zirconium nitride layer, which indicates that the low-radiation white glass prepared by the method of the present application can be used to replace the gray glass with low reflection and low transmittance effect, and because the gray glass is not supplied enough and is easy to mildew, the white glass is used to replace the gray glass to prepare the low-radiation glass with low reflection and low transmittance effect, so that the manufacturing cost is reduced, and the production efficiency and the product quality are improved.
As can be seen from examples 1, 2 and 3 and examples 9 and 10, the silicon-zirconium doping ratio of the silicon-zirconium nitride layer is one of the important parameters affecting the visible light reflectivity and the visible light transmittance, and the data show that the visible light reflectivity and the visible light transmittance in examples 1 to 3 are significantly smaller than those in examples 9 and 10, which indicates that the optimal ratio of the silicon-zirconium doped target material is as follows: the weight percentage of silicon is 60-66%, and the weight percentage of zirconium is 34-40%.
As can be seen from examples 1, 4, 5 and examples 7, 8, the thickness of the zirconium silicon nitride layer is also one of the important parameters affecting the visible light reflectance and transmittance, and the data show that the visible light reflectance and visible light transmittance in examples 1, 4, 5 are significantly less than those in examples 7, 8, indicating that the optimum thickness of the deposited zirconium silicon nitride layer is 2-5 nm.
The above description is only exemplary of the present application and should not be taken as limiting the present application, as any modification, equivalent replacement, or improvement made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (8)
1. A low-emissivity coated glass, comprising:
the glass substrate is white glass;
a zirconium silicon nitride layer laminated and bonded to the surface of the glass substrate, the zirconium silicon nitride layer having a thickness of 2 to 5 nm;
and the functional film layer is laminated and combined on the outer surface of the silicon zirconium nitride layer.
2. The low-emissivity coated glass according to claim 1, wherein the functional film layer is formed by laminating at least one unit functional film layer, wherein the unit functional film layer comprises a dielectric layer, a functional layer, a barrier layer and a protective layer, and the dielectric layer, the functional layer, the barrier layer and the protective layer are sequentially laminated and combined along an extending direction away from the glass substrate.
3. The low-emissivity coated glass according to claim 2, wherein the functional film layer is formed by laminating two unit functional film layers, and comprises a first dielectric layer, a first functional layer, a first barrier layer, a first protective layer, a second dielectric layer, a second functional layer, a second barrier layer and a second protective layer which are sequentially laminated and combined.
4. The low-emissivity coated glass of claim 2, wherein the dielectric layer of the dielectric layer has a thickness of 20 nm to 80 nm.
5. The low-emissivity coated glass according to claim 2, wherein the functional layer has a thickness of 1nm to 10 nm.
6. The low-emissivity coated glass according to claim 2, wherein the barrier layer has a thickness of 1-5 nm; and/or
The thickness of the protective layer is 3-8 nm.
7. The low-emissivity coated glass according to any one of claims 1 to 6, wherein the outer surface of the functional film layer is further laminated with an outer dielectric layer and an abrasion resistant layer in this order.
8. The low-emissivity coated glass according to claim 7, wherein the outer dielectric layer has a thickness of 25-35 nm; and/or
The thickness of the wear-resistant layer is 2-5 nm.
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| CN202121141182.6U Active CN216073589U (en) | 2021-05-25 | 2021-05-25 | Low-emissivity coated glass |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115140949A (en) * | 2022-06-29 | 2022-10-04 | 天津旗滨节能玻璃有限公司 | Low-reflectivity LOW-transmittance LOW-E coated glass and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115140949A (en) * | 2022-06-29 | 2022-10-04 | 天津旗滨节能玻璃有限公司 | Low-reflectivity LOW-transmittance LOW-E coated glass and manufacturing method thereof |
| CN115140949B (en) * | 2022-06-29 | 2023-12-05 | 天津旗滨节能玻璃有限公司 | Low-reflectivity LOW-transmittance LOW-E coated glass and manufacturing method thereof |
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