CN216015349U - 一种散热性好的半导体结构 - Google Patents
一种散热性好的半导体结构 Download PDFInfo
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- CN216015349U CN216015349U CN202122674915.9U CN202122674915U CN216015349U CN 216015349 U CN216015349 U CN 216015349U CN 202122674915 U CN202122674915 U CN 202122674915U CN 216015349 U CN216015349 U CN 216015349U
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- heat
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- heat dissipation
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 77
- 239000004065 semiconductor Substances 0.000 title claims abstract description 51
- 238000010438 heat treatment Methods 0.000 claims abstract description 42
- 238000009423 ventilation Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000010030 laminating Methods 0.000 claims abstract description 9
- 230000001681 protective effect Effects 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000009413 insulation Methods 0.000 claims description 12
- 239000004576 sand Substances 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- 239000004519 grease Substances 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 16
- 238000005516 engineering process Methods 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 24
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 241001391944 Commicarpus scandens Species 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202122674915.9U CN216015349U (zh) | 2021-11-03 | 2021-11-03 | 一种散热性好的半导体结构 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202122674915.9U CN216015349U (zh) | 2021-11-03 | 2021-11-03 | 一种散热性好的半导体结构 |
Publications (1)
Publication Number | Publication Date |
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CN216015349U true CN216015349U (zh) | 2022-03-11 |
Family
ID=80586200
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202122674915.9U Active CN216015349U (zh) | 2021-11-03 | 2021-11-03 | 一种散热性好的半导体结构 |
Country Status (1)
Country | Link |
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CN (1) | CN216015349U (zh) |
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2021
- 2021-11-03 CN CN202122674915.9U patent/CN216015349U/zh active Active
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20230920 Address after: Room 503-C28, 5th Floor, Datong Innovation and Entrepreneurship Space, No.1 Datong Yiheng Road, Longhua District, Haikou City, Hainan Province, 570100 Patentee after: Hainan Ruishengtian Technology Co.,Ltd. Address before: 510000 No. 106 Fengze East Road, Nansha District, Guangzhou City, Guangdong Province Patentee before: Guangzhou Shengxi Information Technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20240126 Address after: 491, 4th Floor, Building 1, Baijiatuan Shangpingyuan, Haidian District, Beijing, 100000 Patentee after: Beijing Huake Zhixin Technology Co.,Ltd. Country or region after: China Address before: Room 503-C28, 5th Floor, Datong Innovation and Entrepreneurship Space, No.1 Datong Yiheng Road, Longhua District, Haikou City, Hainan Province, 570100 Patentee before: Hainan Ruishengtian Technology Co.,Ltd. Country or region before: China |
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TR01 | Transfer of patent right |