CN215933634U

CN215933634U - Miniature light-emitting diode, display panel and splicing display module

Info

Publication number: CN215933634U
Application number: CN202122518411.8U
Authority: CN
Inventors: 樊勇
Original assignee: Xiamen Xinying Display Technology Co ltd
Current assignee: Xiamen Xinying Display Technology Co ltd
Priority date: 2021-10-19
Filing date: 2021-10-19
Publication date: 2022-03-01
Anticipated expiration: 2031-10-19

Abstract

The utility model provides a micro light-emitting diode, a display panel and a splicing display module. The functional layer is located on the inner surface of the first reflecting layer and sequentially comprises an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer in the direction departing from the first reflecting layer. The protective layer covers the functional layer, the P-type electrode is connected with the P-type semiconductor layer, and the N-type electrode is connected with the N-type semiconductor layer. The light emitting layer can emit light to the periphery, and the first reflecting layer can reflect the received light to the N-type electrode and the P-type electrode side so as to improve the bottom light extraction efficiency. When N type electrode and P type electrode and base plate are connected, can promote display panel's bottom luminous efficacy to promote the luminous efficacy of concatenation display module assembly, reduce the consumption.

Description

Miniature light-emitting diode, display panel and splicing display module

Technical Field

The utility model relates to the technical field of display, in particular to a miniature light-emitting diode, a display panel and a splicing display module.

Background

Compared with an Organic Light-Emitting Diode (OLED), the Micro LED display has the advantages of high reliability, high brightness, high transparency, high pixels and the like, has high packaging requirements, is easy to realize flexible and seamless splicing display, and is a future display with great development potential in the future.

According to the technical scheme for splicing the flexible micro-diodes in the prior art, the circuit layer is bent to the front side by adopting the common micro-light emitting diode, but the back light emitting effect of the micro-light emitting diode with the structure is poor.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a miniature light-emitting diode, a display panel and a splicing display module, and aims to improve the bottom light-emitting efficiency of the miniature light-emitting diode.

In a first aspect, the present invention provides a micro light emitting diode, comprising:

a first reflective layer having an inner surface and an outer surface;

the functional layer is positioned on the inner surface of the first reflecting layer and sequentially comprises an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer in the direction departing from the first reflecting layer;

a protective layer covering the functional layer;

a P-type electrode connected to the P-type semiconductor layer; and

an N-type electrode connected with the N-type semiconductor layer.

Further preferably, the first reflective layer includes a metal reflective layer having a reflectivity of greater than 90%.

Further preferably, the first reflective layer includes a wavelength-selective reflective multilayer film structure composed of a high-refractive-index dielectric material.

Further preferably, the P-type electrode and the N-type electrode are located on the same side of the first reflective layer.

Further preferably, the micro light emitting diode further includes:

a buffer layer between the first reflective layer and the functional layer, the protective layer further covering the buffer layer;

and the second reflecting layer is positioned on the side surface of the functional layer and the side surface of the buffer layer, and the second reflecting layer is positioned on the outer side of the protective layer.

Further preferably, the P-type electrode and the N-type electrode are located on different sides of the first reflective layer.

Further preferably, the micro light emitting diode further includes: and the first reflecting layer and the second reflecting layer are positioned on the outer side of the protective layer.

In a second aspect, the present invention provides a display panel comprising:

a substrate having a first surface;

the thin film transistor layer is positioned on the first surface of the substrate and comprises a light emitting area and a binding area positioned at the edge of the light emitting area;

the micro light-emitting diodes are positioned on one side of the thin film transistor layer, which is far away from the substrate, and positioned in the light-emitting area, and the first reflecting layer of the micro light-emitting diodes is positioned on one side of the light-emitting layer, which is far away from the substrate;

the binding structure is positioned on one side, away from the substrate, of the thin film transistor layer and is positioned in the binding region;

the connecting layer is positioned on one side, away from the substrate, of the thin film transistor layer and provided with a first end connected with the binding structure and a second end extending to the light emitting region;

a circuit board connected with the second end of the connection layer.

Further preferably, the display panel further includes:

an encapsulation layer covering the plurality of micro light emitting diodes, the encapsulation layer being located in the light emitting region;

wherein, the height of the packaging layer is greater than that of the micro light-emitting diode.

Further preferably, the height of the binding structure is greater than or equal to the height of the encapsulation layer.

Further preferably, the encapsulation layer reflects light emitted by the micro light emitting diode to the substrate, and the reflectivity of the encapsulation layer is greater than 70%.

In a third aspect, the present invention provides a tiled display module, where the tiled display module includes a plurality of tiled display panels, and the display panel is any one of the display panels described above.

The utility model has the beneficial effects that: the utility model provides a miniature emitting diode, display panel and concatenation display module assembly, miniature emitting diode includes first reflection stratum, functional layer, protective layer, P type electrode and N type electrode, first reflection stratum has internal surface and surface. The functional layer is located on the inner surface of the first reflecting layer and sequentially comprises an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer in the direction departing from the first reflecting layer. The protective layer covers the functional layer, the P-type electrode is connected with the P-type semiconductor layer, and the N-type electrode is connected with the N-type semiconductor layer. The light emitting layer can emit light to the periphery, and the first reflecting layer can reflect the received light to the N-type electrode and the P-type electrode side so as to improve the bottom light extraction efficiency. When N type electrode and P type electrode and base plate are connected, can promote display panel's bottom luminous efficacy to promote the luminous efficacy of concatenation display module assembly, reduce the consumption.

Drawings

The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.

Fig. 1 is a schematic structural diagram of a display panel according to a first embodiment of the present invention;

fig. 2 is a schematic structural diagram of a micro light emitting diode according to a second embodiment of the present invention;

FIG. 3 is a schematic structural diagram of a micro light emitting diode according to a further embodiment of the second embodiment of the present invention;

fig. 4 is a schematic structural diagram of a micro light emitting diode according to a third embodiment of the present invention;

FIG. 5 is a schematic structural diagram of a micro light emitting diode according to a further embodiment of the third embodiment of the present invention;

FIG. 6 is a schematic structural diagram of a micro light emitting diode and a display panel package according to a further embodiment of the present invention;

FIG. 7 is a diagram of a driving circuit for driving a micro light emitting diode according to a fourth embodiment of the present invention;

fig. 8 is a schematic structural diagram of a tiled display module according to a fifth embodiment of the present invention.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the utility model, and not restrictive of the full scope of the utility model. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it is to be understood that the terms "first", "second" and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.

The following disclosure provides many different embodiments or examples for implementing different features of the utility model. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a display panel according to a first embodiment of the present invention.

The display panel 100 includes: a substrate 10, said substrate 10 having a first surface 101; a thin-film transistor layer 20 located on the first surface 101 of the substrate 10, wherein the thin-film transistor layer 20 includes a light emitting region a and a binding region B located at an edge of the light emitting region a; the binding structure 30 is positioned on one side of the thin-film transistor layer 20, which faces away from the substrate 10, and is positioned in the binding region B; a connection layer 40 located on a side of the thin-film-transistor layer 20 facing away from the substrate 10, the connection layer 40 having a first end 41 connected to the bonding structure 30 and a second end 42 extending to the light emitting region a; and a circuit board 50 connected to the second end 42 of the connection layer 40.

The substrate 10 may be a glass substrate, and the first surface 101 may be an upper surface of the substrate 10 or a lower surface of the substrate 10. In the embodiment of the utility model, the first surface 101 is the upper surface of the substrate 10 by default without specific description.

The Thin Film Transistor layer 20 includes a plurality of Thin Film Transistors (TFTs) that may be used as switches of the display panel 100, and each pixel on the display panel 100 is driven by the TFTs. The thin-film transistor layer 20 includes a light emitting area a and a binding area B located at an edge of the light emitting area a. Specifically, the bonding region B is located at the edge of the right side of the light emitting region a, and may also be located at the edge of the substrate 10.

The binding structure 30 is located on a side of the thin-film transistor layer 20 away from the substrate 10 and located in the binding region B, the binding structure 30 has a certain height, the bottom of the binding structure is connected to the thin-film transistor layer 20, and the top of the binding structure is used for connecting to the connection layer 40. Specifically, the bonding structure 30 includes a first bonding pad 31 located on a side of the thin-film transistor layer 20 away from the substrate 10, a second bonding pad 32 located on a side of the connection layer 40 facing the substrate 10, and a bonding metal 33 located between the first bonding pad 31 and the second bonding pad 32. Since the bonding structure 30 is located in the bonding region B, it is located directly above the substrate 10.

Connection layer 40 is located on a side of thin-film-transistor layer 20 facing away from substrate 10 and has a first end 41 and a second end 42. The connection layer 40 is disposed parallel to the substrate 10 (or the thin-film transistor layer 20), and has a first end 41 located on the bonding structure 30 and connected thereto (i.e., located in the bonding region B), and a second end 42 located in the light-emitting region a and connected to the circuit board 50. Since the bonding structure 30 and the connection layer 40 are both made of conductive materials, the thin-film transistor layer 20 and the circuit board 50 can be electrically connected. The connection layer 40 may be a Chip On Film (COF) or a Flexible Printed Circuit (FPC). When the connection layer 40 is a COF, a driving chip (not shown) may be fixed on the COF.

In the present embodiment, the bonding structure 30, the connection layer 40, and the circuit board 50 are bonded within a range directly above the substrate 10. Further, the connection layer 40 is located on a side of the bonding structure 30 away from the thin-film transistor layer 20, and the circuit board 50 is located on a side of the connection layer 40 away from the bonding structure 30.

The display panel 100 further includes a plurality of micro light emitting diodes 60 and an encapsulation layer 70 covering the plurality of micro light emitting diodes 60. The micro light emitting diodes 60 are located on a side of the thin-film transistor layer 20 away from the substrate 10 and located in the light emitting region a. The encapsulation layer 70 covers the micro light emitting diodes 60 and is located in the light emitting region a. The micro light emitting diode 60 is immersed in the encapsulation layer 70, that is, the height of the encapsulation layer 70 is greater than the height of the micro light emitting diode 60, so as to realize tight encapsulation of the micro light emitting diode 60.

The height of the bonding structure 30 is greater than or equal to the height of the encapsulation layer 70, so that the connection layer 40 on the bonding structure 30 can be disposed parallel to the substrate 10. When the height of the bonding structure 30 is equal to the height of the encapsulation layer 70, the lower surface of the connection layer 40 contacts the upper surface of the encapsulation layer 70, so that the encapsulation layer 70 can support the connection layer 40.

In one embodiment, the encapsulation layer 70 is a high-reflectivity encapsulation material (such as a UV film) capable of reflecting the light emitted from the micro light emitting diode 60 to the substrate 10, and the reflectivity of the encapsulation layer 70 is greater than 70%. Since the encapsulation layer 70 has high reflectivity, the light extraction efficiency of the bottom light of the display panel 100 can be improved.

In the display panel 100 provided by the embodiment of the utility model, the bonding structure 30 bonds the connection layer 40 and the circuit board 50 at the same side of the substrate 10, and a flexible substrate is not required to be arranged, so that a flexible printed circuit is prevented from being arranged on the side surface of the substrate 10, and the flexible printed circuit is prevented from being bent, so that the process is simple, the cost is low, and the reliability is high. In addition, by providing the encapsulation layer 70 having a high reflectance, the bottom emission of the display panel 100 can be realized.

Referring to fig. 2, fig. 2 is a schematic structural diagram of a micro light emitting diode according to a second embodiment of the present invention. The micro light emitting diode 60A in the present embodiment can be packaged in the display panel 100 provided in the first embodiment.

The micro light emitting diode 60A includes a first reflective layer 671, a buffer layer 61, and a functional layer 62. The first reflective layer 671 has an inner surface 6711 and an outer surface 6712, the buffer layer 61 is located on the inner surface 6711 of the first reflective layer 671, and the functional layer 62 is located on a side of the buffer layer 61 facing away from the first reflective layer 671. Specifically, the functional layer 62 includes an N-type semiconductor layer 621, a light emitting layer 622, and a P-type semiconductor layer 623 in this order in a direction away from the first reflective layer 671.

The micro light emitting diode 60A further includes a protective layer 63, a P-type electrode 64 and an N-type electrode 65. The protective layer 63 covers the functional layer 62 and the buffer layer 61, the P-type electrode 64 is connected to the P-type semiconductor layer 623, and the N-type electrode 65 is connected to the N-type semiconductor layer 621. Further, a P-type electrode 64 and an N-type electrode 65 are connected to a side of the thin-film transistor layer facing away from the substrate. Specifically, the P-type electrode 64 and the N-type electrode 65 are located on the same side of the first reflective layer 671, and are directly connected to the thin-film transistor layer 20 in the first embodiment shown in fig. 1; the first reflective layer 671 is located on a side of the light-emitting layer 622 away from the substrate, and is covered by the encapsulation layer 70.

The material of the buffer layer 61 may be gallium nitride or aluminum nitride, and the material of the protective layer 63 may be an insulating material, such as silicon oxide or silicon nitride. The P-type electrode 64 contacts the lower surface of the P-type semiconductor layer 623 through the protective layer 63, and the N-type electrode 65 contacts the lower surface of the N-type semiconductor layer 621 through the protective layer 63.

Further, the micro light emitting diode 60A may further include a diffusion layer 66 between the P-type semiconductor layer 623 and the P-type electrode 64. Wherein the N-type electrode 65 contacts the diffusion layer 66 through the protective layer 63, and the N-type electrode 65 is connected to the P-type semiconductor layer 623 through the diffusion layer 66. The material of the diffusion layer 66 may be at least one of indium tin oxide, indium gallium oxide, indium tin zinc oxide, and conductive polymer.

Here, the light emitting layer 622, the P-type semiconductor layer 623, and the diffusion layer 66 are smaller with respect to the widths of the N-type semiconductor layer 621 and the buffer layer 61 to expose a portion of the lower surface of the N-type semiconductor layer 621 to be in contact with the N-type electrode 65. In addition, the protective layer 63 covers the lower surface and the side surfaces of the diffusion layer 66, the side surfaces of the P-type semiconductor layer 623, the side surfaces of the light-emitting layer 622, the side surfaces of the N-type semiconductor layer 621, the exposed lower surface of the N-type semiconductor layer 621, the side surfaces of the buffer layer 61, and a part of the lower surface of the first reflective layer 671.

The first reflective layer 671 can be a metal reflective layer with high reflectivity, such as high reflectivity metal like aluminum, silver, etc., and has a 420-680nm full-band reflective characteristic, and the reflectivity is greater than 90%. The first reflective layer 671 may also be a wavelength selectively reflective multilayer film structure composed of a high and low refractive index dielectric material. For the micro light emitting diode 60A emitting blue light, the reflection wavelength of the first reflection layer 671 is 420-480nm, and the reflectivity is more than 90%; for the micro light emitting diode 60A emitting green light, the reflection wavelength of the first reflection layer 671 is 500-570nm, and the reflectivity is more than 90%; for the micro led 60A emitting red light, the reflection wavelength of the first reflective layer 671 is 600-680nm, and the reflectivity is greater than 90%.

The first reflective layer 671 can reflect the upward light to the substrate for emission, so that the micro light emitting diode 60A with the first reflective layer 671 is applied to the display panel 100, and bottom emission of the display panel 100 can be realized with high light extraction efficiency.

Further, referring to fig. 3, fig. 3 is a schematic structural diagram of a micro light emitting diode according to a further embodiment of the second embodiment of the present invention. For the sake of easy description and understanding, the same reference numerals may be used for the same structures in the present embodiment as in the second embodiment, and the same structures will not be described in detail in the present embodiment.

The micro light emitting diode 60B in this embodiment can be packaged in the display panel 100 provided in the first embodiment. The micro light emitting diode 60B further includes a second reflective layer 672 located on the side surface of the functional layer 62 and the side surface of the buffer layer 61, the second reflective layer 672 is located outside the protective layer 63, and the protective layer 63 separates the second reflective layer 672 from the functional layer 62.

The second reflective layer 672 may be a metal reflective layer with high reflectivity, such as high reflectivity metal, e.g. aluminum, silver, etc., and has a 420-680nm full-band reflective characteristic, and the reflectivity is greater than 90%. The second reflecting layer 672 can also be a multilayer film structure composed of high-refractive index and low-refractive index medium materials and used for wavelength selective reflection, and for the micro light-emitting diode 60B emitting blue light, the reflecting wavelength of the second reflecting layer 672 is 420-480nm, and the reflectivity is more than 90%; for the micro light emitting diode 60B emitting green light, the reflection wavelength of the second reflection layer 672 is 500-570nm, and the reflectivity is more than 90%; for the micro led 60B emitting red light, the reflection wavelength of the second reflective layer 672 is 600-680nm, and the reflectivity is greater than 90%.

Specifically, the second reflective layer 672 may be positioned at the side surfaces of the buffer layer 61, the N-type semiconductor layer 621, the light emitting layer 622, the P-type semiconductor layer 623 and the diffusion layer 66. The second reflective layer is not provided on the side surface between the N-type electrode 65 and the P-type electrode 64. In a modification, the second reflective layer may also be provided on the side surface between the N-type electrode 65 and the P-type electrode 64. The second reflective layer 672 can reflect light emitted from the light-emitting layer 622 back, for example, to reflect light emitted from the light-emitting layer 622 to the first reflective layer 671 and then to the substrate.

The micro light emitting diode 60B provided in the embodiment of the present invention can realize bottom emission of the display panel 100 by cooperating with the encapsulation layer. Furthermore, the micro light emitting diode 60B can improve the light emitting efficiency of bottom light emission of the micro light emitting diode 60B and improve the light emitting efficiency of the micro light emitting diode display panel by adding a high-reflectivity reflection layer on the bottom or the bottom side, so that the light emitting efficiency of the micro light emitting diode display is improved, and the power consumption is reduced.

Referring to fig. 4, fig. 4 is a schematic structural diagram of a micro light emitting diode according to a third embodiment of the present invention. The micro light emitting diode 60C in this embodiment can be packaged in the display panel 100 provided in the first embodiment.

The micro light emitting diode 60C includes: a first reflective layer 610 (having an inner surface 6101 and an outer surface 6102); a functional layer 620 on an inner surface 6101 of the first reflective layer 610 (comprising an N-type semiconductor layer 6201, a light-emitting layer 6202, and a P-type semiconductor layer 6203 in that order in a direction away from the first reflective layer 610); a protective layer 630 covering the functional layer 620; a P-type electrode 640 connected to the P-type semiconductor layer 6203; and an N-type electrode 650 connected to the N-type semiconductor layer 6201. Among them, the materials of the first reflective layer 610 and the protective layer 630 may be the same as those of the first reflective layer 671 and the protective layer 63 in the second embodiment, respectively.

The micro light emitting diode 60C in the present embodiment is different from the micro light emitting diode 60A in the second embodiment in that the P-type electrode 640 and the N-type electrode 650 are located at different sides of the first reflective layer 610. The N-type electrode 650 is located above the first reflective layer 610, specifically above the functional layer 620, and is connected to the N-type semiconductor layer 6201 through the first reflective layer 610 and the protective layer 630; the P-type electrode 640 is located below the first reflective layer 610, specifically below the functional layer 620, and is connected to the P-type semiconductor layer 6203 through the protective layer 630.

The protective layer 630 is disposed to surround the functional layer 620, and the first reflective layer 610 is disposed on an upper surface of the protective layer 630. The first reflective layer 610 may reflect light emitted from the light emitting layer 6202 to the bottom.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a micro light emitting diode according to a further embodiment of the present invention. The micro light emitting diode 60D in this embodiment can be packaged in the display panel 100 provided in the first embodiment.

This micro light emitting diode 60D is different from the micro light emitting diode 60C in the third embodiment in that the micro light emitting diode 60D further includes a second reflective layer 611 located at a side of the functional layer 620. The first reflective layer 610 and the second reflective layer 611 are located outside the protection layer 630, the first reflective layer 610 is located on the upper surface of the protection layer 630, and the second reflective layer 611 is located on the side surface of the protection layer 630. The first and second

reflective layers

610 and 611 may reflect light emitted from the light-emitting layer 6202 to the bottom of the micro light-emitting diode 60.

Among them, the material of the second reflective layer 611 may be the same as that of the second reflective layer 672 in a further embodiment of the second embodiment.

Referring to fig. 6, fig. 6 is a schematic structural diagram of a micro light emitting diode and a display panel package according to a further embodiment of the present invention. A partial structure of the display panel can be seen in fig. 1.

The N-type electrode 650 and the P-type electrode 640 of the micro led 60D are connected to a side of the thin-film transistor layer 20 away from the substrate 10. Specifically, the P-type electrode 640 is directly connected to the thin-film transistor layer 20, and the N-type electrode 650 is connected to the thin-film transistor layer 20 through the via 651.

Further, the upper surface of the protection layer 630 and the upper surface of the first reflective layer 610 have a first opening 652, the encapsulation layer 70 has a via 651 disposed perpendicular to the thin-film-transistor layer 20, and the bottom of the via 651 is in contact with the thin-film-transistor layer 20. The N-type electrode 650 is formed on the upper surface of the first reflective layer 610, the inner surface of the first opening 652, and the inner surface of the via hole 651, and the encapsulation layer 70 fills the first opening 652 and the via hole 651.

Referring to fig. 7, fig. 7 is a schematic diagram of a driving circuit for driving a micro light emitting diode according to a fourth embodiment of the present invention. The drive circuit includes: a thin film transistor D including three thin film transistors (T1, T2, and T3) and one storage capacitor Cst; and a micro light emitting diode 60E electrically connected to the thin film transistor D.

The gates of T1 and T3 receive the scan signal Vgate, the source of T1 receives the data signal Vdata, the source of T3 receives the sense signal Vsensing, and the source of T2 receives the power signal Vdd. The drain of T1 is connected to the gate of T2, and the drain of T1 and the drain of T2 form a storage capacitor Cst. The drain of T3 and the drain of T2 are connected together and connected to P-type electrode 6401 of micro LED 60E, and N-type electrode 6501 is connected to common electrode Vcc.

In the present embodiment, the thin film transistor D (including T1, T2, and T3) and the common electrode Vcc are formed in the thin film transistor layer, and the micro light emitting diode 60E is formed on the thin film transistor layer. The data signal of T1, the power signal of T2, and the sensing signal of T3 drive the P-type electrode 6401 of the micro led 60E together, so that current flows from the P-type electrode 6401 to the N-type electrode 6501 to the common electrode Vcc, thereby realizing light emission of the micro led 60E.

Referring to fig. 8, fig. 8 is a schematic structural diagram of a tiled display module according to a fifth embodiment of the present invention.

The tiled display module 200 includes a plurality of display panels 201, the display panels 201 are tiled closely, and the display panel 201 is the display panel 100 provided in the first embodiment. Since the display panel has been described in detail in the first embodiment, the description of the embodiment is omitted.

The above description of the embodiments is only for helping understanding the technical solution of the present invention and its core idea; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims

1. A micro light emitting diode, comprising:

a first reflective layer having an inner surface and an outer surface;

a protective layer covering the functional layer;

a P-type electrode connected to the P-type semiconductor layer; and

an N-type electrode connected with the N-type semiconductor layer.

2. The micro light-emitting diode of claim 1, wherein the first reflective layer comprises a metal reflective layer having a reflectivity of greater than 90%.

3. The micro light-emitting diode of claim 1, wherein the first reflective layer comprises a wavelength-selective reflective multilayer film structure composed of a high and low index dielectric material.

4. The micro light-emitting diode of claim 1, wherein the P-type electrode and the N-type electrode are on a same side of the first reflective layer.

5. The micro light-emitting diode of claim 4, further comprising:

6. The micro light-emitting diode of claim 1, wherein the P-type electrode and the N-type electrode are located on different sides of the first reflective layer.

7. The micro light-emitting diode of claim 6, further comprising a second reflective layer on a side of the functional layer, wherein the first and second reflective layers are outside the protective layer.

8. A display panel, comprising:

a substrate having a first surface;

a plurality of the micro light-emitting diodes as claimed in any one of claims 1 to 7, the micro light-emitting diodes being located at a side of the thin-film transistor layer facing away from the substrate and at the light-emitting region, the first reflective layer of the micro light-emitting diodes being located at a side of the light-emitting layer facing away from the substrate;

a circuit board connected with the second end of the connection layer.

9. The display panel according to claim 8, characterized in that the display panel further comprises:

10. The display panel of claim 9, wherein the height of the bonding structure is greater than or equal to the height of the encapsulation layer.

11. The display panel of claim 9, wherein the encapsulation layer reflects light emitted from the micro light emitting diodes to the substrate, and the reflectivity of the encapsulation layer is greater than 70%.

12. A tiled display module comprising a plurality of tiled display panels, wherein the display panels are according to any one of claims 8 to 11.