CN215834759U

CN215834759U - Terminal with memory function

Info

Publication number: CN215834759U
Application number: CN202121613420.9U
Authority: CN
Inventors: 王超; 毕海波
Original assignee: Changchun Jetty Automotive Parts Co Ltd
Current assignee: Changchun Jetty Automotive Parts Co Ltd
Priority date: 2021-07-15
Filing date: 2021-07-15
Publication date: 2022-02-15
Anticipated expiration: 2031-07-15

Abstract

The utility model provides a terminal with a memory function, which comprises a memory contact section (3), wherein the memory contact section (3) comprises a plurality of contact claws (31), all or part of the contact claws (31) are made of memory alloy, the contact claws (31) are arranged at intervals along the circumferential direction of the memory contact section (3), and the contact claws (31) can contract in the radial direction. This terminal with memory function can realize not having the butt joint of insertion force, realizes the terminal and to joining in marriage the area of contact and the contact force of terminal through the rising of temperature in work, has improved the reliability of contact, owing to saved the requirement of insertion force, work is lighter, and work efficiency improves.

Description

Terminal with memory function

Technical Field

The utility model relates to a terminal with a memory function.

Background

With the gradual popularization of electric vehicles, the market demand for charging plugs and charging seats is also gradually increasing. In prior art, the terminal on charging plug, the stake of charging, charging seat and the car all relies on mechanical structure's such as shell fragment, bolt tightening mode to realize and to joining in marriage the terminal contact, needs certain insertion force, instrument just can accomplish the installation, has the problem of the inefficiency of terminal butt joint, installation inconvenience.

SUMMERY OF THE UTILITY MODEL

In order to improve the efficiency of the butt joint of the terminals, the utility model provides the terminal with the memory function, the terminal with the memory function can realize the butt joint without insertion force, the contact area and the contact force between the terminal and the butt joint terminal are ensured by the rise of the temperature in the work, the contact reliability is improved, the work is easier and the work efficiency is improved because the requirement of the insertion force is saved.

The technical scheme adopted by the utility model for solving the technical problems is as follows:

a terminal with a memory function comprises a memory contact section, wherein the memory contact section comprises a plurality of contact claws, all or part of the contact claws are made of memory alloy, the plurality of contact claws are arranged at intervals along the circumferential direction of the memory contact section, and the plurality of contact claws can be radially contracted.

The memory contact section is of a cylindrical structure, the outer contour of the section of the memory contact section is circular or polygonal, and the inner contour of the section of the memory contact section is circular or polygonal.

The cross section of the contact claw is round, rectangular, rhombic, triangular, fan-shaped or trapezoidal.

The metamorphosis temperature of the memory contact section is 40-70 ℃; when the temperature of the memory contact section is lower than the transformation temperature, the plurality of contact claws are in an expanded state; when the temperature of the memory contact section is higher than the transformation temperature, the plurality of contact claws are in a contracted state.

The memory contact section is of a cylindrical structure, the number of the contact claws is larger than or equal to 3, and when the temperature of the memory contact section is lower than the metamorphosis temperature, the distances from the inner surfaces of the outer ends of the contact claws to the axis of the memory contact section are arranged alternately.

The memory contact section is of a cylindrical structure, the number of the contact claws is more than or equal to 3, and the cross section areas of the contact claws are alternately arranged along the circumferential direction of the memory contact section.

The outer end of the contact claw is internally provided with a first inner convex part.

The terminal with the memory function further comprises a cable connecting section and a transition section, and the cable connecting section, the transition section and the memory contact section are sequentially arranged.

The cable connecting section is of a flat plate structure, a U-shaped structure, a major arc structure, a cylindrical structure, a bowl-shaped structure or a polygonal structure.

A groove is formed outside the transition section, and a sealing ring is assembled in the groove.

The sealing ring is made of rubber.

A through hole is formed outside the transition section, and a temperature sensor is arranged in the through hole.

The temperature sensor is partially or completely arranged in the through hole.

The temperature sensor is in interference fit with the through hole.

The outer wall of the temperature sensor is provided with external threads, the through hole is provided with internal threads, and the temperature sensor is in threaded connection with the through hole.

And a shielding layer is arranged outside the temperature sensor.

The temperature sensor is an NTC temperature sensor or a PTC temperature sensor.

The included angle between the plugging direction of the memory contact section and the wiring direction of the cable connecting section is larger than 0 degree and smaller than or equal to 180 degrees.

The memory contact section is of a cylindrical structure, a conductive contact part is arranged outside the outer end of the contact claw, the material of the conductive contact part is different from that of the contact claw, and the distance from the conductive contact part to the axis of the memory contact section is smaller than that from the contact claw to the axis of the memory contact section.

The memory contact section is a cylindrical structure, the contact claw contains an inner conductive contact strip and an outer memory strip which are arranged in an inner-outer stacking mode, the material of the outer memory strip is memory alloy, and the material of the inner conductive contact strip is different from that of the outer memory strip.

The length of the inner conductive contact strip is the same as the length of the outer memory strip.

The outer end of the inner conductive contact strip is internally provided with a second bulge.

The contact claw is provided with a plating layer.

The coating is made of one of gold, silver, nickel, tin, zinc, tin-lead alloy, silver-antimony alloy, palladium-nickel alloy, graphite silver, graphene silver and silver-gold-zirconium alloy.

The coating comprises a bottom layer and a surface layer.

The bottom layer is made of one of gold, silver, nickel, tin-lead alloy and zinc; the surface layer is made of one of gold, silver, nickel, tin-lead alloy, silver-antimony alloy, palladium-nickel alloy, graphite-silver, graphene-silver and silver-gold-zirconium alloy.

The thickness of the bottom layer is 0.01-18 μm.

The thickness of the bottom layer is 01-9 μm.

The thickness of the surface layer is 0.6-56 μm.

The thickness of the surface layer is 1-30 μm.

The memory alloy is nickel titanium alloy.

The cable connecting section and the transition section are made of copper or copper alloy.

The material of the cable connecting section and/or the transition section contains tellurium.

The utility model has the beneficial effects that:

1. this terminal with memory function when the abnormal temperature is below, a plurality of contact claws of memory contact section are radial expansion state usually, can realize not having the insertion force butt joint to the spigot terminal this moment, make things convenient for operating personnel light with electric apparatus to carry out the butt joint. The terminal conduction current in work, because the effect terminal temperature of resistance risees gradually, when the temperature risees more than the abnormal temperature, a plurality of contact claws will radially contract, increased the terminal through the rising of temperature and to joining in marriage the area of contact and the contact force of terminal, improved the reliability of contact, owing to saved the requirement of insertion force, work is lighter, and work efficiency improves.

2. The plug-in terminal provided by the utility model adopts the tellurium copper alloy, so that the terminal has good conductivity and easy cutting performance, the electrical performance is ensured, the processability can be improved, and meanwhile, the elasticity of the tellurium copper alloy is also excellent.

3. The plug terminal adopts the plating layer, so that the corrosion resistance can be better improved, the firmness of the plating layer can be better improved by preferably adopting the composite plating layer, and the plating layer can still be ensured not to fall off and the corrosion resistance after being plugged and pulled for many times.

4. The temperature sensor can go deep into the terminal to obtain the most accurate terminal temperature value. Thereby helping the staff to know the temperature condition of the terminal during operation.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the utility model and, together with the description, serve to explain the utility model and not to limit the utility model.

Fig. 1 is a perspective view of a contact claw of a terminal with a memory function of the present invention in an expanded state in embodiment 1.

Fig. 2 is a perspective view of the contact pawl of the terminal with memory function of the present invention in the contracted state in embodiment 1.

Fig. 3 is a schematic sectional view of the contact claw of the terminal with memory function of the present invention in the contracted state in embodiment 1.

Fig. 4 is a schematic view of the case where the angle between the plugging direction of the memory contact section and the wiring direction of the cable connection section is 90 ° in example 1.

Fig. 5 is a schematic perspective view of the terminal with memory function of the present invention in embodiment 2.

Fig. 6 is a schematic sectional view of the terminal with memory function of the present invention in embodiment 2.

Fig. 7 is a schematic perspective view of the terminal with memory function of the present invention in embodiment 3.

Fig. 8 is a schematic sectional view of the terminal with memory function of the present invention in embodiment 3.

1. A cable connection section; 2. a transition section; 3. a memory contact section; 4. a mating terminal; 5. a cable;

21. a sealing ring mounting groove; 22. a through hole;

31. a contact claw; 32. a first inner projection; 33. an inner conductive contact strip; 34. an external memory strip; 35. a conductive contact; 36. a second projection.

Detailed Description

It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

Example 1

A terminal with a memory function comprises a memory contact section 3, wherein the memory contact section 3 comprises a plurality of contact claws 31, all or part of the contact claws 31 are made of memory alloy, the plurality of contact claws 31 are arranged at intervals along the circumferential direction of the memory contact section 3, and the plurality of contact claws 31 can contract or expand in the radial direction, as shown in figures 1 and 2.

The plurality of contact fingers 31 of the memory contact section 3 are normally in a radially expanded state at room temperature, and when the temperature of the memory contact section 3 is higher than the transformation temperature, the plurality of contact fingers 31 will contract radially. When the temperature of the memory contact section 3 is below the transformation temperature, the memory contact section 3 will expand radially. Therefore, the contact area and the contact force of the terminal and the mating terminal are ensured through the rise of the temperature, the contact reliability is improved, the requirement of insertion force is omitted, the work is easier, and the work efficiency is improved.

In the present embodiment, the memory contact section 3 is made of a memory alloy wholly or partially, the memory contact section 3 has a cylindrical structure, the outer profile of the cross section of the memory contact section 3 is a circle or a polygon (such as a triangle, a square, a pentagon, a hexagon, a heptagon or an octagon), and the inner profile of the cross section of the memory contact section 3 is a circle or a polygon.

In the present embodiment, the contact finger 31 has an elongated cylindrical structure, and the cross section of the contact finger 31 may be circular, rectangular, diamond-shaped, triangular, fan-shaped or trapezoid. The cross-sectional dimensions of the contact fingers 31 can be determined as desired and in limited experiments, as can the length of the contact fingers 31.

The memory contact section 3 is made of memory alloy, and the transformation temperature is 40-70 ℃; when the temperature of the memory contact section 3 is lower than the transformation temperature, the plurality of contact claws 31 are in the expanded state; when the temperature of the memory contact section 3 is higher than the transformation temperature, the plurality of contact claws 31 are in a contracted state.

The memory alloy is a special metal material which can restore the original macroscopic shape in another temperature range after being subjected to plastic deformation in a certain temperature range. In the present invention, the temperature point of the plastic deformation is called transformation temperature, the content of different metals in the memory alloy is changed, the transformation temperature of the memory alloy can be changed, the transformation temperature is generally selected to be between 40 ℃ and 70 ℃, because if the transformation temperature is lower than 40 ℃, the environmental temperature of the terminal can reach to be close to 40 ℃ under the condition of no conducting current, at this time, the plurality of contact claws 31 are in a contraction state, the aperture of the terminal is reduced, the plug terminal can not be inserted into the terminal with the memory function, and the electric device can not be plugged, and the work can not be carried out.

At room temperature, the plug terminal and the terminal with the memory function start to conduct electricity after being plugged, and because the contact claws 31 are in an expansion state just before the plugging, the contact area between the terminal with the memory function and the plug terminal is small, the current is large, so that the temperature of the plugged terminal starts to rise, if the metamorphic temperature is higher than 70 ℃, the temperature rise time of the terminal is long, the electric device is in a large current state for a long time, the electric aging is easy to cause, and the electric device is overloaded and damaged in serious cases, so that unnecessary loss is caused.

Therefore, the transformation temperature of the terminal with memory function is generally set to be between 40 ℃ and 70 ℃.

In this embodiment, the material of the memory contact section 3 is nitinol, and the transformation temperature (also referred to as transformation temperature or transition temperature) of the memory contact section 3 is 40 ℃. When the temperature of the memory contact section 3 is lower than the transformation temperature, the plurality of contact claws 31 are in the expanded state; when the temperature of the memory contact section 3 is higher than the transformation temperature, the plurality of contact claws 31 are in a contracted state as shown in fig. 1 and 2.

In the present embodiment, the memory contact section 3 has a cylindrical structure, the number of the contact claws 31 is greater than or equal to 3 (for example, 8), and when the temperature of the memory contact section 3 is lower than the transformation temperature, the distances from the inner surfaces of the outer ends of the plurality of contact claws 31 to the axis of the memory contact section 3 can be arranged alternately. When the cylindrical structure is inserted into the opposite plug terminal, only a part of the contact claws 31 with a small distance contacts the opposite plug terminal, so that the opposite plug terminal can be inserted into the cylindrical structure with a small insertion force,

according to the terminal with the memory function, the cylindrical structure and the opposite-inserting terminal are oppositely inserted, the distance from the inner surface of the outer end of the contact claws 31 to the axis of the memory contact section 3 can be arranged alternately, the requirement of insertion force is omitted, the terminal is easier to work, and the working efficiency is improved.

In the present embodiment, the memory contact section 3 is a cylindrical structure, the number of the contact claws 31 is greater than or equal to 3 (for example, 8), and the cross-sectional areas of the plurality of contact claws 31 may be alternately arranged along the circumferential direction of the memory contact section 3. The sectional area of the contact claws 31 is larger in relation to the elasticity of the contact claws 31 themselves, and the larger the sectional area is, the better the elasticity of the contact claws 31 is, and in order to make the arrangement of the cylindrical structure and the gripping force of the mating terminal uniform, the sectional areas of the plurality of contact claws 31 are alternately arranged, so that the elasticity of the contact claws can be correspondingly and uniformly distributed on the mating terminal.

In addition, in order to reduce the insertion force when the cylindrical structure and the opposite insertion terminal are inserted, the distance from the inner surface of the outer end of the contact claw 31 with a large cross-sectional area to the axis of the memory contact section 3 can be larger than the distance from the inner surface of the outer end of the contact claw 31 with a small cross-sectional area to the axis of the memory contact section 3, so that the cross-sectional area is large, the contact claw with a large elastic force cannot limit the insertion of the opposite insertion terminal, the cross-sectional area is small, the contact claw with a small elastic force can insert and guide the opposite insertion terminal, the smooth insertion of the opposite insertion terminal into the cylindrical structure can be ensured, the insertion force can be greatly reduced, and the working efficiency is improved.

The outer end of the contact claw 31 (the upper end of the contact claw 31 in fig. 1) may be provided with a first inner protrusion 32. Generally be the male terminal to the spigot terminal, when service environment is abominable or long-term external use, to spigot terminal surface have silt or dirt or foreign matter etc. if do not do the processing, not only can influence contact claw 31 and to the contact effect of spigot terminal, reduce electrical properties, also can cause the damage to both surfaces, destroy the cladding material, cause the very big reduction of spigot terminal life-span, can be because contact resistance increases when serious, lead to the overheated burning of spigot joint, cause the incident. Set up first interior convex part 32 in contact claw 31's outer end, with the surface laminating to the spigot terminal, when inserting, first interior convex part 32 internal surface can scrape spigot terminal surface, can effectually get rid of silt, dirt and the foreign matter to spigot terminal surface to make both can inseparabler contact, realize better electrical properties.

In this embodiment, the terminal with memory function further includes a cable connection section 1 and a transition section 2, and the cable connection section 1, the transition section 2 and the memory contact section 3 are connected in sequence. The transition section 2 is a connection transition area of the cable connecting section 1 and the memory contact section 3, and is also an area where the terminal with the memory function is assembled and fixed with an electric device. The cable connecting section 1 can be electrically connected with a cable, so that the electric energy is transmitted through the terminals with the memory function and the opposite insertion of the opposite insertion end terminals.

The cable connecting section 1 is of a flat plate structure, a U-shaped structure, a major arc structure, a cylindrical structure, a bowl-shaped structure or a polygonal structure. Generally, a crimping or welding process is adopted to electrically connect the cable, the cable connecting section 1 is designed into various structures, different structures of the cable connecting section 1 can be selected according to the requirements of electrical connection and the assembly environment of an electric device, and stable electrical connection can be established with the cable. Generally, a U-shaped structure or a major arc structure or a cylindrical structure or a polygonal structure is suitable for crimping and welding, and a flat plate structure or a bowl structure is suitable for welding.

The crimping is a mechanical deformation mode, pressure is applied to enable the cable connecting section 1 and part of the wires in the cable connecting section to deform together, and the wires are in full contact with the inside of the cable connecting section 1 and are connected together by means of friction force. The welding modes comprise ultrasonic welding, resistance welding, arc welding, pressure welding, electromagnetic welding, laser welding and the like, and the cable connecting section 1 and part of wires are welded together to realize stable electrical performance and mechanical performance.

The ultrasonic welding method is a method in which high-frequency vibration waves are transmitted to the surfaces of two objects to be welded, and the surfaces of the two objects are rubbed against each other under pressure to form fusion between the molecular layers.

The resistance welding method is a method of welding by using a strong current to pass through a contact point between an electrode and a workpiece and generating heat by a contact resistance.

The arc welding method is a method of connecting metals by converting electric energy into thermal energy and mechanical energy required for welding using an electric arc as a heat source and utilizing a physical phenomenon of air discharge, and the main methods include shielded metal arc welding, submerged arc welding, gas shielded welding, and the like.

The pressure welding method is a method of applying pressure to a workpiece to bring the joining surfaces into close contact with each other to generate a certain plastic deformation, thereby completing welding.

The electromagnetic welding mode is that an electromagnetic induction coil is used to generate a short and very strong current from a pulse generator, and the electromagnetic field generated by the induction coil can instantly collide and extrude the materials to be welded together.

The laser welding method is an efficient and precise welding method using a laser beam with high energy density as a heat source.

According to needs, can be equipped with sealing ring mounting groove 21 outside changeover portion 2, installation sealing ring in the recess 21, the sealing ring material is the rubber material, has great deflection and waterproof nature, can be outside changeover portion 2 and to joining in marriage the terminal and directly compressed formation seal structure, inside the effectual external water that prevents enters into the terminal, guarantee electrical connection's security to and the life of terminal.

The transition section 2 can be provided with a sensor mounting through hole 22 outside, a temperature sensor is arranged in the through hole 22, and the temperature sensor is partially or completely arranged in the through hole 22.

The temperature sensor is interference fit with the through hole 22.

The outer wall of the temperature sensor is provided with external threads, the through hole 22 is provided with internal threads, and the temperature sensor is in threaded connection with the through hole 22.

And a shielding layer is arranged outside the temperature sensor. The shielding layer can avoid the data of the temperature sensor from being interfered by the outside world, and the accuracy of the data is ensured.

The temperature sensor is an NTC temperature sensor or a PTC temperature sensor. The two temperature sensors have the advantages of small volume and capability of measuring gaps which cannot be measured by other thermometers; the use is convenient, and the resistance value can be randomly selected from 0.1-100 k omega; the cable connector is easy to process into a complex shape, can be produced in large batch, has good stability and strong overload capacity, and is suitable for a product with small requirement on volume and stable performance, such as an adapter.

In some embodiments, there is provided a temperature acquisition device: the output module comprises a programmable controller, a transmission unit and a power supply, the temperature sensor is electrically connected with the programmable controller, and the transmission unit wirelessly (or in a wired mode) transmits temperature information obtained by the programmable controller.

Still further, there is provided in some embodiments a temperature acquisition system: the acquisition terminal obtains temperature information through the information receiving device, the storage unit is used for storing the temperature information, the comparison unit is used for comparing the temperature information with preset safety information, and if the acquired information exceeds the preset information, the acquisition terminal sends an alarm through the alarm unit to notify workers. A plurality of collection terminals all with server remote connection, the server monitors all temperature information of gathering, can also send temperature information to removing the end, supplies the staff anytime and anywhere to master the temperature information of each terminal in the work area.

In this embodiment, according to the installation direction of the electric device and the wire outgoing direction of the cable, the included angle between the plugging direction a of the memory contact section 3 and the wiring direction B of the cable connection section 1 may be greater than 0 ° and less than or equal to 180 °, so that a designer can conveniently select different wire outgoing directions according to the actual environment of the terminal arrangement with the memory function, the size of the electric device is reduced, the contact area between the terminal and the wire is optimized, and the electrical performance of the terminal with the memory function is enhanced. As shown in fig. 3, the angle between the plugging direction a of the memory contact section 3 and the wiring direction B of the cable connection section 1 is equal to 180 °. As shown in fig. 4, the angle between the plugging direction a of the memory contact section 3 and the wiring direction B of the cable connection section 1 is equal to 90 °.

In the present embodiment, the contact claws 31 have plating thereon. The material of the coating is one or more of gold, silver, nickel, tin, zinc, tin-lead alloy, silver-antimony alloy, palladium-nickel alloy, graphite-silver, graphene-silver and silver-gold-zirconium alloy. Copper or aluminum as an active metal is oxidized with oxygen and water during use, so that one or more inactive metals are required as a plating layer to prolong the service life of the terminal with a memory function. In addition, for the metal contact which needs to be plugged and pulled frequently, better wear-resistant metal is needed to be used as a plating layer, and the service life of the contact can be greatly prolonged. The contact needs good conductive performance, the conductivity and the stability of the metal are superior to those of copper or copper alloy, aluminum or aluminum alloy, and the terminal with the memory function can obtain better electrical performance and longer service life.

In order to demonstrate the influence of different plating layer materials on the overall performance of the terminal with the memory function, the utility model discloses the people uses same specification, material, adopts the terminal sample piece with the memory function of different plating layer materials, utilizes the terminal of the same specification to be a series of plug number of times and corrosion resistance time test to the plug, and the experimental result is as shown in table 1 below.

The following table 1 shows the number of plugging and unplugging operations in the experiment table, in which the terminal with the memory function and the opposite-plugging terminal are respectively fixed on the experiment table, the terminal with the memory function and the opposite-plugging terminal are subjected to analog plugging and unplugging by using a mechanical device, and the condition that the surface plating layer of the terminal with the memory function is damaged is observed after each 100 times of plugging and unplugging operations, the surface plating layer of the terminal with the memory function is scratched, the material of the terminal with the memory function is exposed, the experiment is stopped, and the number of plugging and unplugging operations at that time is recorded. The plugging times are less than 8000 times, which is not qualified.

The corrosion resistance time test in the following table 1 is to put the terminal with the memory function into a salt spray test box, spray salt spray to each position of the terminal, take out the terminal every 20 hours, clean and observe the surface corrosion condition, namely a period, stop the test until the surface corrosion area of the terminal with the memory function is more than 10% of the total area, and record the period number at that time. In this example, the number of cycles less than 80 was considered to be unacceptable.

Table 1: influence of different coating materials on insertion and extraction times and corrosion resistance of terminal with memory function

From the above table, when the selected plating layer is made of gold, silver-antimony alloy, palladium-nickel alloy, graphite silver, graphene silver and silver-gold-zirconium alloy, the experimental result exceeds the standard value more and the performance is more stable. When chooseing for use the cladding material to be nickel, tin-lead alloy, zinc, the experimental result also can meet the demands, consequently, the utility model people selects the cladding material to be one kind or the multiple combination in gold, silver, nickel, tin-lead alloy, zinc, silver-antimony alloy, palladium-nickel alloy, graphite silver and silver-gold zirconium alloy.

In this embodiment, the plating layer includes a base layer and a surface layer. In some embodiments, the plating layer adopts a multi-layer plating method, after the terminal with the memory function is processed, a plurality of gaps and holes still exist under a micro interface of the real surface of the terminal with the memory function, and the gaps and holes are the largest cause of abrasion and corrosion of the terminal with the memory function in the use process, so that a bottom layer is plated on the surface of the terminal with the memory function, the gaps and holes on the surface are filled, the surface of the terminal with the memory function is smooth and free of holes, then a surface plating layer is plated, the terminal with the memory function is combined more firmly and can be smoother, no gaps and holes exist on the surface of the plating layer, the wear resistance, the corrosion resistance and the electrical property of the terminal with the memory function are better, and the service life of the terminal with the memory function is greatly prolonged.

The bottom layer is made of one or more of gold, silver, nickel, tin-lead alloy and zinc; the surface layer is made of one or more of gold, silver, nickel, tin-lead alloy, silver-antimony alloy, palladium-nickel alloy, graphite silver, graphene silver and silver-gold-zirconium alloy.

In this embodiment, the thickness of the underlayer is 0.01 μm to 18 μm. Preferably, the thickness of the primer layer is 0.1 μm to 9 μm.

In this embodiment, the thickness of the surface layer is 0.6 μm to 56 μm. Preferably, the thickness of the surface layer is 1 μm to 30 μm.

In order to demonstrate the influence of the change of the thickness of the bottom plating layer on the overall performance of the terminal with the memory function, the utility model discloses the people uses the same specification, material, adopts different nickel plating bottom layer thicknesses, and the terminal sample piece of the same silver-plated top layer thickness utilizes the plug terminal of the same specification to do a series of temperature rises and corrosion resistance time tests, and the experimental result is as shown in table 2 below.

In the temperature rise test in table 2 below, the terminal with the memory function after being plugged and the terminal of the plugging terminal are energized with the same current, the temperature of the terminal with the memory function before being energized and after being stabilized in temperature is detected at the same position in a closed environment, and the absolute value is obtained by subtracting. In this example, a temperature rise greater than 50K is considered unacceptable.

The corrosion resistance time test in the following table 2 is to put the terminal with the memory function into a salt spray test box, spray salt spray to each position of the terminal with the memory function, take out the terminal with the memory function every 20 hours, clean and observe the surface corrosion condition, namely a period, stop the test until the surface corrosion area of the terminal with the memory function is more than 10% of the total area, and record the period number at that time. In this example, the number of cycles less than 80 was considered to be unacceptable.

Table 2: influence of different bottom coating thicknesses on temperature rise and corrosion resistance of terminal with memory function

As can be seen from table 2 above, when the thickness of the nickel-plated bottom layer is less than 0.01 μm, the temperature rise of the terminal with memory function is acceptable, but since the plating layer is too thin, the number of cycles of corrosion resistance of the terminal with memory function is less than 80, which does not meet the performance requirement of the terminal with memory function. The overall performance and the service life of the butt-joint plug-in have great influence, and the service life of the product is suddenly reduced or even the product fails to work in case of serious accidents. When the thickness of the bottom layer nickel plating layer is larger than 15 mu m, the heat generated by the terminal with the memory function cannot be dissipated because the bottom layer plating layer is thick, so that the temperature rise of the terminal with the memory function is unqualified, and the plating layer is thick and is easy to fall off from the surface of the terminal, so that the corrosion resistance periodicity is reduced. Therefore, the utility model selects the thickness of the bottom plating layer to be 0.01-15 μm. Preferably, the utility model discloses a discovery, the bottom plating layer thickness is 0.1 mu m-9 mu m, and the temperature rise of the terminal with memory function and corrosion resistance's combined effect is better, therefore, in order to further improve the security reliability and the practicality of product itself, the bottom plating layer thickness is preferably 0.1 mu m-9 mu m.

In order to demonstrate the influence of the thickness change of the surface plating layer on the overall performance of the terminal with the memory function, the utility model discloses the people uses the same specification, material, adopts the same nickel plating bottom thickness, and the terminal sample piece of different silver plating surface layer thicknesses utilizes the same specification to join in marriage and connect plug-in components and do a series of temperature rises and corrosion resistance time test, and the experimental result is as shown in table 3 below.

The experimental method is the same as the above experimental method.

Table 3: influence of different surface coating thicknesses on temperature rise and corrosion resistance of terminal with memory function

As can be seen from table 3 above, when the thickness of the silver plating layer on the surface layer is less than 0.5 μm, the temperature rise of the terminal with the memory function is acceptable, but since the plating layer is too thin, the number of cycles of corrosion resistance of the terminal with the memory function is less than 80, which does not meet the performance requirement of the terminal with the memory function. The overall performance and the service life of the plug-in structure are greatly influenced, and the service life of the product is suddenly reduced or even the product fails to work when the product is serious. When the thickness of the silver plating layer on the surface layer is larger than 55 mu m, the heat generated by the terminal with the memory function cannot be dissipated because the plating layer on the bottom layer is thick, so that the temperature rise of the terminal with the memory function is unqualified, and the plating layer is thick and is easy to fall off from the surface of the terminal, so that the corrosion resistance periodicity is reduced. Further, since the surface layer plating metal is expensive, the performance is not improved and the use value is not high by using a thick plating layer. Therefore, the utility model selects the thickness of the silver plating layer on the surface layer to be 0.1-55 μm. Preferably, the utility model discloses a discovery, when top plating layer thickness is 1 mu m-35 mu m, the temperature rise of terminal with memory function and corrosion resistance's combined effect is better, therefore, in order to further improve the security reliability and the practicality of product itself, top plating layer thickness is 1 mu m-35 mu m preferably.

The plating layer may be disposed on the contact fingers 31 by electroplating, chemical plating, magnetron sputtering, or vacuum plating.

The electroplating method is a process of plating a thin layer of other metals or alloys on the surface of some metals by utilizing the electrolysis principle.

The chemical plating method is a deposition process for generating metal through controllable oxidation-reduction reaction under the catalytic action of the metal.

The magnetron sputtering method is characterized in that electrons spirally run near the surface of a target by utilizing the interaction of a magnetic field and an electric field, so that the probability of generating ions by the electrons colliding with argon is increased. The generated ions collide with the target surface under the action of the electric field so as to sputter the target material.

The vacuum plating method is to deposit various metal and non-metal films on the surface of the plastic part by distillation or sputtering under vacuum condition.

The material of the cable connecting section 1 is memory alloy, which is a memory intelligent metal, the microstructure of the cable connecting section has two relatively stable states, the alloy can be changed into any desired shape at high temperature, the alloy can be stretched at lower temperature, if the cable connecting section is reheated, the alloy remembers the original shape and changes back, the crystal structures of the memory alloy above the metamorphosis temperature and below the metamorphosis temperature are different, but when the temperature is changed above and below the metamorphosis temperature, the memory alloy contracts or expands, so that the shape of the memory alloy is changed.

In some embodiments, the specific material of the memory alloy is nitinol, which is a binary alloy composed of nickel and titanium, and has two different crystal structure phases, namely an austenite phase and a martensite phase, due to changes in temperature and mechanical pressure. The contact claws 31 with transformation temperature of 40-70 ℃ can be obtained by nickel titanium alloy with different metal contents.

The material of the cable connecting section and the transition section is copper or copper alloy. Copper has good electrical conductivity and excellent ductility, and is one of the materials commonly used for electrical conduction.

When the material of the barrel-type terminal is copper alloy, preferably, the copper material contains tellurium material, so that the terminal has good conductivity and easy cutting performance, the electrical property is ensured, the processability can be improved, and meanwhile, the elasticity of the tellurium-copper alloy is excellent.

Preferably, the tellurium content in the tellurium-copper alloy is 0.1% -5%, and further preferably, the tellurium content in the tellurium-copper alloy is 0.2% -1.2%.

Utility model people have chooseed for use 10 plug terminals of the same shape, the same expansion contraction joint width to test, and every terminal is tellurium copper alloy, and wherein the content of tellurium accounts for than being 0.05%, 0.1%, 0.2%, 1%, 1.2%, 1.8%, 3%, 5%, 6%, 7% respectively. As shown in Table 4, in this example, the conductivity of the tellurium-copper alloy is greater than 99% as the ideal value.

Table 4, effect of tellurium-copper alloys of different tellurium contents on conductivity.

Tellurium content

0.05％

0.1％

0.2％

1％

1.2％

1.8％

3％

5％

6％

7％

Electrical conductivity of

98.7％

99.1％

99.3％

99.6％

99.9％

99.5％

99.3％

99.1％

98.9％

98.6％

As can be seen from table 4, when the content ratio of tellurium is less than 0.1% or more than 5%, the conductivity is significantly decreased, failing to meet the actual demand. When the content of tellurium accounts for more than or equal to 0.2 percent and less than or equal to 1.2 percent, the conductivity is the best, so the utility model selects tellurium copper alloy with 0.1 to 5 percent of tellurium content. Under the most ideal condition, 0.2-1.2% tellurium-copper alloy is selected.

The operation of the terminal with memory function is described below

The material of the cable connecting section 1 is memory alloy, which is a memory intelligent metal, the microstructure of the cable connecting section has two relatively stable states, the alloy can be changed into any desired shape at high temperature, the alloy can be stretched at lower temperature, if the cable connecting section is reheated, the alloy remembers the original shape and changes back, the crystal structures of the memory alloy above the metamorphosis temperature and below the metamorphosis temperature are different, but when the temperature is changed above and below the metamorphosis temperature, the memory alloy contracts or expands, so that the shape of the memory alloy is changed. By utilizing the characteristics, the memory metal with the transformation temperature of 40-70 ℃ is selected to be manufactured into the terminal with the memory function, and the terminal with the memory function is manufactured into the required size when the temperature is higher than the transformation temperature.

For example, in some embodiments, the specific material of the memory alloy is nitinol, and the memory contact section 3 of the terminal with the memory function is inserted into the mating terminal 4, and can be matched with the corresponding shape according to requirements. The memory contact section 3 is a split ring with the inner diameter of phi 10mm, the split (contact claw 31) of the memory contact section 3 is opened when the temperature is below 40 ℃, the split ring is inserted into the mating terminal 4 and then heated to above 40 ℃, the memory contact section 3 returns to the original state with the inner diameter of phi 10mm, so that the memory contact section 3 is in a radial contraction state and realizes the close contact with the mating terminal 4, the terminal with the memory function can generate temperature rise when in a working state, and when the temperature reaches above 40 ℃, the size of the radial contraction state can be always kept, thereby realizing the close contact with the mating terminal 4 when in the working state. When it is necessary to loosen the mating terminal 4, the temperature of the memory contact section 3 is lowered below 40 ℃, and the memory contact section 3 is in a radially expanded state so that the mating terminal 4 can be pulled out.

Example 2

This embodiment is a modification of embodiment 1, and the main difference between this embodiment and embodiment 1 is that:

a conductive contact portion 35 is provided outside an outer end of the contact claw 31 (an upper end of the contact claw 31 in fig. 5), a material of the conductive contact portion 35 is different from a material of the contact claw 31, the contact claw 31 is made of a memory alloy, the conductive contact portion 35 is made of a conductive metal which is not a memory alloy, and a distance from an inner surface of the conductive contact portion 35 to an axis of the memory contact section 3 is smaller than a distance from the inner surface of the contact claw 31 to the axis of the memory contact section 3, as shown in fig. 5 and 6.

The advantage of this embodiment is that part of the memory alloy can be saved, the rest of the technical features in this embodiment can be the same as those in embodiment 1, and this embodiment will not be described in detail for the sake of brevity.

Example 3

This embodiment is a modification of embodiment 1, and the main difference between this embodiment and embodiment 1 is that: one part of the contact claw 31 is made of memory alloy and the other part of the memory contact section 3 is made of non-memory alloy.

Specifically, the contact claw 31 includes an inner conductive contact bar 33 and an outer memory bar 34 which are laminated and connected inside and outside, the outer memory bar 34 is made of a memory alloy, the inner conductive contact bar 33 is made of a conductive fixed metal which is a non-memory alloy, and the inner conductive contact bar 33 and the outer memory bar 34 are made of different materials. The memory contact section 3 includes an inner conductive contact cylinder and an outer memory cylinder which are connected by an inner sleeve and an outer sleeve, the inner conductive contact bar 33 is a part of the inner conductive contact cylinder, and the outer memory bar 34 is a part of the outer memory cylinder, as shown in fig. 7.

The length of the inner conductive contact strip 33 and the length of the outer memory strip 34 may be the same, with the thickness of the inner conductive contact strip 33 being less than or equal to the thickness of the outer memory strip 34. A second projection 36 is provided in the outer end of the inner conductive contact strip 33 as shown in fig. 8.

The above description is only exemplary of the utility model and should not be taken as limiting the scope of the utility model, so that the utility model is intended to cover all modifications and equivalents of the embodiments, which may be included within the spirit and scope of the utility model. In addition, the technical features and the technical schemes, and the technical schemes can be freely combined and used.

Claims

1. A terminal with a memory function is characterized by comprising a memory contact section (3), wherein the memory contact section (3) comprises a plurality of contact claws (31), all or part of the contact claws (31) are made of memory alloy, the contact claws (31) are arranged at intervals along the circumferential direction of the memory contact section (3), and the contact claws (31) can radially contract.

2. Terminal with memory function according to claim 1, characterized in that the memory contact section (3) is cylindrical in structure, the cross-sectional outer contour of the memory contact section (3) is circular or polygonal, and the cross-sectional inner contour of the memory contact section (3) is circular or polygonal.

3. Terminal with memory function according to claim 1, characterized in that the cross section of the contact claw (31) is circular, rectangular, diamond-shaped, triangular, fan-shaped or trapezoidal.

4. Terminal with memory function according to claim 1, characterized in that the transformation temperature of the memory contact section (3) is 40 ℃ -70 ℃; when the temperature of the memory contact section (3) is lower than the transformation temperature, the plurality of contact claws (31) are in an expanded state; when the temperature of the memory contact section (3) is higher than the transformation temperature, the plurality of contact claws (31) are in a contracted state.

5. Terminal with memory function according to claim 1, characterized in that the memory contact section (3) is cylindrical, the number of the contact claws (31) is greater than or equal to 3, and the distance from the inner surface of the outer end of the plurality of contact claws (31) to the axis of the memory contact section (3) is arranged alternately far and near along the circumferential direction of the memory contact section (3) when the temperature of the memory contact section (3) is lower than the transformation temperature.

6. The terminal with the memory function according to claim 1, wherein the memory contact section (3) has a cylindrical structure, the number of the contact claws (31) is greater than or equal to 3, and the cross-sectional areas of the plurality of contact claws (31) are alternately arranged along the circumferential direction of the memory contact section (3).

7. A terminal with memory function according to claim 1, characterized in that the contact claw (31) is provided with a first inner projection (32) in its outer end.

8. The terminal with the memory function according to claim 1, further comprising a cable connecting section (1) and a transition section (2), wherein the cable connecting section (1), the transition section (2) and the memory contact section (3) are arranged in sequence.

9. Terminal with memory function according to claim 8, characterized in that the cable connection section (1) is of a plate-like structure or a U-shaped structure or a major arc-shaped structure or a cylindrical structure or a bowl-shaped structure or a polygonal structure.

10. Terminal with memory function according to claim 8, characterized in that the transition section (2) is provided with a groove outside, in which a sealing ring is fitted.

11. The terminal with memory function as claimed in claim 10, wherein the sealing ring is made of rubber.

12. The terminal with the memory function according to claim 8, wherein a through hole (22) is arranged outside the transition section (2), and a temperature sensor is arranged in the through hole (22).

13. Terminal with memory function according to claim 12, characterized in that the temperature sensor is partially or totally arranged within the through hole (22).

14. Terminal with memory function according to claim 12, characterized in that the temperature sensor is interference fitted with the through hole (22).

15. Terminal with memory function according to claim 12, characterized in that the outer wall of the temperature sensor is provided with an external thread and the through hole (22) is provided with an internal thread, the temperature sensor being screwed with the through hole (22).

16. The terminal with memory function according to claim 12, wherein a shielding layer is provided outside the temperature sensor.

17. The terminal with memory function as claimed in claim 12, wherein the temperature sensor is an NTC temperature sensor or a PTC temperature sensor.

18. Terminal with memory function according to claim 1, characterized in that the angle between the plugging direction of the memory contact section (3) and the wiring direction of the cable connection section (1) is greater than 0 ° and less than or equal to 180 °.

19. The terminal with the memory function according to claim 1, wherein the memory contact section (3) is cylindrical, the conductive contact portion (35) is arranged outside the outer end of the contact claw (31), the material of the conductive contact portion (35) is different from that of the contact claw (31), and the distance from the conductive contact portion (35) to the axis of the memory contact section (3) is smaller than the distance from the contact claw (31) to the axis of the memory contact section (3).

20. The terminal with the memory function according to claim 1, wherein the memory contact section (3) is of a cylindrical structure, the contact claw (31) comprises an inner conductive contact strip (33) and an outer memory strip (34) which are arranged in an inner-outer laminated manner, the material of the outer memory strip (34) is memory alloy, and the material of the inner conductive contact strip (33) is different from that of the outer memory strip (34).

21. Terminal with memory function according to claim 20, characterized in that the length of the inner conductive contact strip (33) and the length of the outer memory strip (34) are the same.

22. A terminal with memory function according to claim 20, characterized in that the inner conductive contact strip (33) is provided with a second projection (36) in its outer end.

23. A terminal with memory function according to any one of claims 1 to 22, wherein the contact claw (31) has a plating layer thereon.

24. The terminal with memory function as claimed in claim 23, wherein the plating layer is made of one of gold, silver, nickel, tin, zinc, tin-lead alloy, silver-antimony alloy, palladium-nickel alloy, graphite-silver, graphene-silver and silver-gold-zirconium alloy.

25. The terminal with memory function as claimed in claim 23, wherein the plating layer comprises a base layer and a surface layer.

26. The terminal with memory function as claimed in claim 25, wherein the bottom layer is made of one of gold, silver, nickel, tin-lead alloy and zinc; the surface layer is made of one of gold, silver, nickel, tin-lead alloy, silver-antimony alloy, palladium-nickel alloy, graphite-silver, graphene-silver and silver-gold-zirconium alloy.

27. The terminal with memory function as claimed in claim 25, wherein the thickness of the bottom layer is 0.01 μm to 18 μm.

28. The terminal with memory function as claimed in claim 25, wherein the bottom layer has a thickness of 0.1 μm to 9 μm.

29. The terminal with memory function as claimed in claim 25, wherein the thickness of the surface layer is 0.6 μm to 56 μm.

30. The terminal with memory function as claimed in claim 25, wherein the thickness of the surface layer is 1 μm to 30 μm.

31. The terminal with memory function as claimed in claim 1, wherein the memory alloy is nitinol.

32. The terminal with memory function according to claim 8, wherein the material of the cable connecting section (1) and the transition section (2) is copper or copper alloy.

33. Terminal with memory function according to claim 32, characterized in that the material of the cable connecting section (1) and/or the transition section (2) contains tellurium.