CN215834503U - Reaction device for preparing silicon oxide and solar cell production system - Google Patents
Reaction device for preparing silicon oxide and solar cell production system Download PDFInfo
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- CN215834503U CN215834503U CN202122223993.7U CN202122223993U CN215834503U CN 215834503 U CN215834503 U CN 215834503U CN 202122223993 U CN202122223993 U CN 202122223993U CN 215834503 U CN215834503 U CN 215834503U
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Abstract
The utility model provides a reaction device for preparing silicon oxide and a solar cell production system, and relates to the field of crystalline silicon. The reaction device for preparing the silicon oxide comprises an oxidation chamber and a steam generating mechanism for providing steam for the oxidation chamber, wherein the steam generating mechanism comprises a steam generator and a steam conveying pipeline, the feeding end of the steam conveying pipeline is communicated with the outlet of the steam generator, and the discharging end of the steam conveying pipeline extends into the oxidation chamber. The reaction activity of the water vapor and the silicon is higher than that of oxygen and silicon, so that an oxide layer can be quickly formed at a lower oxidation temperature, the process energy consumption is saved, the impurity contamination risk of the silicon crystal at a high temperature is reduced, and the better device performance is obtained; thicker oxide layers can also be obtained under similar oxidation conditions as in prior processes, and may provide better process stability when used as a barrier layer.
Description
Technical Field
The utility model relates to the field of crystalline silicon, in particular to a reaction device for preparing silicon oxide and a solar cell production system.
Background
Silicon crystal is currently the most widely used material in the semiconductor field, and is widely used in integrated circuit manufacturing and solar cell manufacturing. The oxide layer-silicon oxide formed on the surface of the silicon crystal also has excellent properties, which enables the silicon crystal to be used more widely. Silicon oxide layers are used in the field of integrated circuit fabrication as dielectric insulating layers, ion implantation barriers, and the like; the silicon oxide layer can be used as a surface defect passivation layer, a diffusion barrier layer, a corrosion barrier layer and the like in the field of solar cell manufacturing. Therefore, forming an oxide layer of silicon is a very important process.
Silicon oxide is typically formed by reacting silicon directly with oxygen at elevated temperatures or deposited on the surface of the silicon by chemical vapor deposition. In the manufacture of solar cells, the process of directly reacting with oxygen usually requires high-temperature oxidation in a quartz furnace tube, and has the characteristics of low oxidation rate, long process time, quartz boat loading and the like; the chemical vapor deposition method requires reaction in a low-pressure environment and in a plasma state, and the equipment cost, the gas source material cost and the process are complex.
As can be seen from analysis, the problems of long process cycle and high preparation cost generally exist in the existing process for preparing silicon oxide.
In view of this, the present application is presented.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a reaction device for preparing silicon oxide and a solar cell production system, which can realize rapid formation of an oxide layer at a lower oxidation temperature, and have the advantages of short preparation period and low cost.
The embodiment of the utility model is realized by the following steps:
in a first aspect, the utility model provides a reaction device for preparing silicon oxide, which comprises an oxidation chamber and a steam generating mechanism for providing steam for reaction for the oxidation chamber, wherein the steam generating mechanism comprises a steam generator and a steam conveying pipeline, the feeding end of the steam conveying pipeline is communicated with the outlet of the steam generator, and the discharging end of the steam conveying pipeline extends into the oxidation chamber.
In an alternative embodiment, the vapor generating mechanism further comprises a carrier gas delivery line and a water inlet line, and the outlets of the carrier gas delivery line and the water inlet line are both located within the vapor generator.
In an alternative embodiment, the outer wall of the vapor delivery line is wrapped with a heating jacket.
In an alternative embodiment, the outlet of the vapor delivery line is connected to a distribution line extending along the length of the oxidation chamber, and a plurality of vapor distribution ports are provided in the distribution line.
In an optional embodiment, a crystalline silicon inlet is formed in the side wall of one end of the oxidation chamber, and a crystalline silicon outlet is formed in the side wall of the other opposite end of the oxidation chamber; and a crystalline silicon conveying device is arranged in the oxidation chamber to convey the crystalline silicon from the crystalline silicon inlet to the crystalline silicon outlet.
In an optional embodiment, the outer wall of the oxidation chamber is coated with an insulating layer with the thickness of 50-300 mm; the heat preservation layer is provided with a crystalline silicon inlet channel corresponding to the crystalline silicon inlet of the oxidation chamber, and the heat preservation layer is also provided with a crystalline silicon outlet channel corresponding to the crystalline silicon outlet of the oxidation chamber.
In an alternative embodiment, the crystalline silicon transfer apparatus includes a plurality of transfer rollers each extending in a direction perpendicular to the transfer direction, and a drive motor for driving the plurality of transfer rollers.
In an optional embodiment, the device further comprises a heater for heating the oxidation chamber and a temperature control mechanism for controlling the operation of the heater, wherein the temperature control mechanism comprises a temperature sensor for detecting the temperature in the oxidation chamber and a controller in communication connection with the temperature sensor.
In an alternative embodiment, the oxidation chamber is divided into a plurality of reaction temperature zones along the crystalline silicon transmission direction, and each reaction temperature zone corresponds to one heater and one temperature sensor, so that the heater of each reaction temperature zone works independently.
In a second aspect, the present invention provides a solar cell production system comprising the reaction apparatus of any one of the preceding embodiments.
The embodiment of the utility model has the beneficial effects that: the water vapor generated by the vapor generating mechanism is conveyed to the oxidation chamber to react with the crystalline silicon, the reaction activity of the water vapor and the silicon is higher than that of oxygen and silicon, an oxidation layer can be quickly formed at a lower oxidation temperature, the process energy consumption is saved, the impurity contamination risk of the silicon crystal at a high temperature is reduced, and the better device performance is favorably obtained; thicker oxide layers can also be obtained under similar oxidation conditions as in prior processes, and may provide better process stability when used as a barrier layer.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a reaction apparatus for preparing silicon oxide according to an embodiment of the present invention;
FIG. 2 is a comparison of XPS testing of samples of the rapid oxidation of Experimental example 1 and the tubular dry oxygen oxidation of comparative example 1.
100-reaction device; 001-crystalline silicon; 110-an oxidation chamber; 111-crystalline silicon inlet; 112-crystalline silicon outlet; 113-an insulating layer; 114-crystalline silicon inlet channels; 115-crystalline silicon outlet channels; 116-a heater; 117-temperature sensor; 120-a vapor generating mechanism; 121-a steam generator; 122-vapor delivery line; 123-carrier gas delivery line; 124-water inlet pipeline; 125-heating jacket; 126-distribution pipes; 127-vapor distribution ports; 131-conveying roller.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element to which the description refers must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the terms "horizontal", "vertical" and the like do not imply that the components are required to be absolutely horizontal or pendant, but rather may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1, in order to solve the problems of high temperature, long reaction period and high cost of the oxidation reaction of crystalline silicon in the prior art, the present invention provides steam for oxidation by using steam generating means 120, and performs the oxidation reaction with silicon by using the steam. The reaction activity of the water vapor and the silicon is higher than that of oxygen and silicon, so that an oxide layer can be quickly formed at a lower oxidation temperature, the process energy consumption is saved, and the impurity contamination risk of the silicon crystal at a high temperature is reduced.
Specifically, the oxidation reaction is carried out on the water vapor and the silicon crystal, and compared with the high-temperature oxidation of oxygen, the oxidation rate can be improved by more than 10 times, so that the production capacity of the solar cell is greatly improved.
The embodiment of the utility model provides a reaction device 100 for preparing silicon oxide, which comprises an oxidation chamber 110 and a steam generating mechanism 120 for providing steam for reaction for the oxidation chamber 110. The vapor generating mechanism 120 generates reaction vapor, and the crystalline silicon 001 reacts with the vapor in the oxidation chamber 110 to form a silicon oxide layer on the crystalline silicon 001.
The vapor generating mechanism 120 comprises a vapor generator 121, a vapor conveying pipeline 122, a carrier gas conveying pipeline 123 and a water inlet pipeline 124, wherein outlets of the carrier gas conveying pipeline 123 and the water inlet pipeline 124 are both positioned in the vapor generator 121, vapor is generated in the vapor generator 121, a feeding end of the vapor conveying pipeline 122 is communicated with the outlet of the vapor generator 121, and a discharging end of the vapor conveying pipeline 122 extends into the oxidation chamber 110.
Specifically, the principle of the steam generator 121 may be: the heater heats the high purity water in the glass bottle to generate water vapor, the evaporation amount of the water vapor can be realized by controlling the temperature of the heater, and the partial pressure of the water vapor in the input oxidation chamber 110 can be controlled by controlling the flow rate of the carrier gas in the carrier gas conveying pipeline 123, and the partial pressure of the water vapor is preferably controlled to be 0.5atm or more. Due to the continuous evaporation of the water vapor, the water needs to be supplemented by the water inlet pipeline 124 to maintain the liquid level of the high-purity water in the glass bottle to be stable. The water inlet line 124 may be replenished with deionized water or ultrapure water, and may be automatically replenished with water depending on the liquid level. The gas introduced into the carrier gas conveying pipeline 123 can be oxygen, compressed air or nitrogen, the flow rate of the gas can be adjusted, and the adjustment of different water vapor partial pressures can be realized by adjusting the temperature of the heater by matching with the steam generator 121.
In some embodiments, the outer wall of the vapor delivery line 122 is covered with a heating jacket 125, and the temperature of the gas in the line is controlled by the heating jacket 125 to be not lower than 100 ℃ to ensure that the water vapor carried by the carrier gas does not condense.
In order to uniformly distribute the water vapor in the oxidation chamber 110, a distribution pipe 126 is connected to an outlet of the vapor delivery pipe 122, the distribution pipe 126 extends along the length direction of the oxidation chamber 110, and a plurality of vapor distribution ports 127 are provided in the distribution pipe 126. The water vapor is introduced through the distribution pipes 126 at different locations of the oxidation chamber 110, so that the water vapor is more uniformly distributed in the oxidation chamber 110.
Specifically, the material of the distribution pipe 126 is quartz glass pipe, and the material of the vapor delivery pipe 122 outside the chamber may be high temperature resistant plastic pipe. However, the material of the pipe is not limited to the above material, and can be selected on the premise of satisfying the requirements of high temperature and cost.
A crystalline silicon inlet 111 is formed in the side wall of one end of the oxidation chamber 110, and a crystalline silicon outlet 112 is formed in the opposite side wall of the other end; a crystalline silicon transfer device (not shown) is disposed in the oxidation chamber 110 to transfer the crystalline silicon 001 from the crystalline silicon inlet 111 to the crystalline silicon outlet 112. The crystalline silicon transfer device may be any transfer form, such as roller transfer, caterpillar transfer, etc., and is not limited herein. And (3) transferring the crystalline silicon 001 from the crystalline silicon inlet 111 to the crystalline silicon outlet 112 by using a crystalline silicon transfer device, and realizing rapid oxidation under the action of high temperature and water vapor in the horizontal movement process to form an oxide layer on the crystalline silicon 001.
Specifically, the oxidation chamber 110 is a space surrounded by high-temperature resistant materials, specifically, the materials can be high-purity quartz, high-purity alumina ceramics and high-temperature resistant glass, and the long-term working temperature is not lower than 900 ℃; the shape of the oxidation chamber 110 is not limited, and may be a rectangular parallelepiped structure.
In some embodiments, the outer wall of the oxidation chamber 110 is coated with an insulating layer 113 having a thickness of 50-300 mm; a crystalline silicon inlet channel 114 corresponding to the crystalline silicon inlet 111 of the oxidation chamber 110 is arranged on the heat-insulating layer 113, and a crystalline silicon outlet channel 115 corresponding to the crystalline silicon outlet 112 of the oxidation chamber 110 is also arranged on the heat-insulating layer 113. The crystalline silicon inlet channel 114 and the crystalline silicon outlet channel 115 can be communicated with other processes, and can be connected with the front and rear processes in a solar cell manufacturing production line by using a tunnel type structure, so that the automation of the operation of the device is increased.
Specifically, the insulating layer 113 may be made of high temperature resistant ceramic fiber (with a thermal conductivity of about 0.15W/mK), and may have a thickness of 200mm, so as to better maintain the temperature of the oxidation furnace chamber. In other embodiments, the thickness of the insulating layer 113 may be 50mm, 100mm, 150mm, 250mm, 300mm, etc., or may be any value between the above adjacent thickness values.
Further, the crystalline silicon transfer apparatus includes a plurality of transfer rollers 131 and a driving motor (not shown) for driving the plurality of transfer rollers 131, and an extending direction of each transfer roller 131 is perpendicular to the transfer direction. The crystalline silicon conveying device drives a plurality of conveying rollers 131 to rotate by using a driving motor, and the crystalline silicon is conveyed from the crystalline silicon inlet 111 to the crystalline silicon outlet 112. The transmission structure belongs to the prior art, and the specific structure and the working principle thereof are not described herein in detail.
In some embodiments, the crystalline silicon transport apparatus may contain a set of roller tables perpendicular to the transport direction or a set of transport lines parallel to the transport direction. The transmission line group can be made of high-temperature resistant ceramic ropes.
Specifically, the material of the conveying roller 131 may be high-purity quartz, high-purity alumina ceramic, or high-temperature resistant ceramic. Under the drive of the driving motor, the conveying rollers 131 roll on the close-packed roller way on the same horizontal plane, the rolling speed can be adjusted, and the horizontal conveying speed is preferably in the range of 1-5 m/s.
Further, the reaction apparatus 100 for preparing silicon oxide further includes a heater 116 for heating the oxidation chamber 110 and a temperature control mechanism (not shown) for controlling the operation of the heater 116, and the temperature control mechanism includes a temperature sensor 117 for detecting the temperature in the oxidation chamber 110 and a controller (not shown) in communication with the temperature sensor 117. The temperature in the oxidation chamber 110 is detected by the temperature sensor 117, and a temperature signal is transmitted to the controller, which is used to control the heater 116 to heat, and when the temperature in the oxidation chamber 110 is too high or too low, the heating intensity of the heater 116 is adjusted to meet the constancy of the reaction temperature.
In some embodiments, the heater 116 may be a high temperature heating wire disposed at an outer sidewall of the chamber, and the oxidation chamber 110 is heated by the heating wire to maintain a desired temperature for the reaction. Specifically, a heating wire may be wound outside the quartz oxidation chamber 110, and the temperature required for the oxidation chamber 110 is provided by the operation of the heating wire, and the operation temperature is not lower than 900 ℃.
In further embodiments, the heater 116 may be a heating lamp tube disposed inside the oxidation chamber 110.
Further, the oxidation chamber 110 is divided into a plurality of reaction temperature zones along the transmission direction of the crystalline silicon, and each reaction temperature zone corresponds to one heater 116 and one temperature sensor 117, so that the heater 116 of each reaction temperature zone works independently. The number of reaction temperature zones is not limited, and can be 3-5, such as three in FIG. 1. The temperature sensors 117 are distributed in the oxidation chamber 110 at different temperature zones in the transport direction, and the temperature of the different temperature zones is independently controlled by the controller and the heater 116.
It should be noted that, by setting a plurality of reaction temperature regions, the segmented heating and control in the oxidation chamber 110 may be realized, for example, 3 independent reaction temperature regions in fig. 1 may realize the setting of a lower temperature region, a high temperature region, and a lower temperature region along the transmission direction, and reduce the thermal impact stress of the crystalline silicon 001 entering and exiting the oxidation chamber 110.
In a second aspect, the present invention provides a solar cell production system, which comprises the reaction apparatus 100 according to any one of the foregoing embodiments, and may further comprise other process units for producing solar cells, forming an integrated apparatus.
The following describes the embodiments of the present invention with reference to specific examples.
Example 1
The reaction is carried out by using the reaction device in FIG. 1, and the specific parameters are as follows in the description of other parts of the detailed structural parameter specification:
the length of the oxidation cavity is designed to be 3 meters, and the oxidation cavity is divided into a first temperature zone, a second temperature zone and a third temperature zone according to the transmission direction, wherein the first temperature zone is set to be 650 ℃, the second temperature zone is 750 ℃, and the third temperature zone is 650 ℃. The carrier gas in the carrier gas delivery line 123 is selected from high-purity oxygen, the flow rate is set to 5L/min, the temperature of the steam generator 121 is 90 ℃, and the temperature of the steam delivery line 122 is maintained at 100 ℃. The horizontal transmission speed of the transmission roller 131 in the crystalline silicon transmission device is set to be 3m/min under the driving of the power device, the silicon wafer with the natural oxide layer removed enters from one side of the oxidation chamber 110, and the silicon wafer is rapidly oxidized for 1min and then is transmitted from the other side. The oxide layer thickness of silicon was tested using X-ray photoelectron spectroscopy (XPS).
Comparative example 1
And (3) directly oxidizing the silicon wafer without the natural oxidation layer in a furnace tube by using pure oxygen as an air source, wherein the set temperature is 700 ℃, and the oxidation time is 10 minutes. After taking out, the thickness of the oxide layer of silicon was measured by XPS.
Test example 1
The two samples of experimental example 1 and comparative example 1 were subjected to XPS test, and the comparison results are shown in fig. 2.
As can be seen from fig. 2 (a): the 2p peak of silicon in the formed silicon oxide with the binding energy of 100-101eV, and 95-98eV is the 2p peak of silicon bulk, and the thickness of the surface silicon oxide can be calculated by the ratio of the intensities of the peaks. The thickness of the oxide layer obtained by tubular dry oxidation at 700 ℃ for 10 minutes in comparative example 1 was calculated to be 1.02nm, and the thickness of the oxide layer obtained by oxidation with water vapor for 1 minute in Experimental example 1 was calculated to be 1.31 nm.
In FIG. 2, (b) shows the peak of oxygen element 1s in the surface oxide layer, and the thickness of the oxide layer can be qualitatively determined from the peak intensity, thus the oxygen element obtained in example 1 has stronger signal and larger thickness value. Therefore, the technical scheme provided by the utility model can obtain a thicker oxide layer in a shorter time. The device has higher oxidation speed, so the device has lower use cost, is easy to use in the manufacture of solar cells, and can generate significant value in the manufacture industry of solar cells.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The reaction device for preparing the silicon oxide is characterized by comprising an oxidation chamber and a steam generating mechanism for providing steam for reaction for the oxidation chamber, wherein the steam generating mechanism comprises a steam generator and a steam conveying pipeline, the feeding end of the steam conveying pipeline is communicated with the outlet of the steam generator, and the discharging end of the steam conveying pipeline extends into the oxidation chamber.
2. The reactor device of claim 1, wherein the vapor generation mechanism further comprises a carrier gas delivery line and a water inlet line, the outlets of the carrier gas delivery line and the water inlet line being located within the vapor generator.
3. The reactor apparatus of claim 2 wherein the outer wall of the vapor delivery conduit is coated with a heating jacket.
4. The reactor apparatus of claim 2, wherein the outlet of the vapor delivery line is connected to a distribution line extending along the length of the oxidation chamber, and wherein a plurality of vapor distribution ports are disposed on the distribution line.
5. The reaction device as claimed in claim 1, wherein a crystalline silicon inlet is arranged on one side wall of the oxidation chamber, and a crystalline silicon outlet is arranged on the other opposite side wall of the oxidation chamber; and a crystalline silicon conveying device is arranged in the oxidation chamber to convey crystalline silicon from the crystalline silicon inlet to the crystalline silicon outlet.
6. The reaction device of claim 5, wherein the outer wall of the oxidation chamber is coated with an insulating layer with a thickness of 50-300 mm; the heat-insulating layer is provided with a crystalline silicon inlet channel corresponding to the crystalline silicon inlet of the oxidation chamber, and the heat-insulating layer is also provided with a crystalline silicon outlet channel corresponding to the crystalline silicon outlet of the oxidation chamber.
7. The reaction device according to claim 5, wherein the crystalline silicon transfer device comprises a plurality of transfer rollers and a drive motor for driving the plurality of transfer rollers, and the extension direction of each transfer roller is perpendicular to the transport direction.
8. The reaction device of claim 1, further comprising a heater for heating the oxidation chamber and a temperature control mechanism for controlling the operation of the heater, wherein the temperature control mechanism comprises a temperature sensor for detecting the temperature in the oxidation chamber and a controller in communication connection with the temperature sensor.
9. The reaction device as claimed in claim 8, wherein the oxidation chamber is divided into a plurality of reaction temperature zones along a crystalline silicon transport direction, and each reaction temperature zone corresponds to one of the heater and the temperature sensor, so that the heater of each reaction temperature zone operates independently.
10. A solar cell production system comprising the reaction apparatus according to any one of claims 1 to 9.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023220140A1 (en) * | 2022-05-13 | 2023-11-16 | Applied Materials, Inc. | Systems and methods to reduce flow accuracy error for liquid & gas mass flow controller devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023220140A1 (en) * | 2022-05-13 | 2023-11-16 | Applied Materials, Inc. | Systems and methods to reduce flow accuracy error for liquid & gas mass flow controller devices |
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