CN215757734U - Device for germanium single crystal growth in fixed size and growth furnace - Google Patents

Abstract

The utility model discloses a device for germanium single crystal growth in a set size, which comprises a set die, wherein a step through hole is formed in the set die, the small end of the step through hole is arranged at the lower part of the set die, the inner wall of the small end is a profiling surface, a fixed edge is arranged on the outer surface of the upper part of the set die, and the fixed edge is arranged at the bottom of a guide cylinder; also provides a growing furnace, which adopts the die. The method can prepare the primary crystal without drawing bars, and has small loss and high quality.

Description

Device for germanium single crystal growth in fixed size and growth furnace

Technical Field

The utility model relates to the technical field of preparation of germanium single crystal materials, in particular to a device and a growth furnace for growing a germanium single crystal in a shape-setting size.

Background

The physical structure of the germanium single crystal material is a diamond structure, and the melting point is 937 ℃. The Cz method (Czochralski method) is generally used for crystal growth. With the maturation of the direct method crystal growth technology and the pursuit of improving the production efficiency of germanium single crystal materials and reducing the production cost of single crystals, the size of single-furnace germanium crystals is larger and larger, and the conventional size can be more than phi 200 mm.

However, for the germanium infrared lens market, over 80% of the market share is the production of small size lenses, especially lenses with a size less than 20 mm. The existing production mode is to use a bar drawing mode to draw small-sized crystals on large-sized crystals, and then carry out cutting, grinding and polishing processing. During the bar drawing process, the loss of the germanium material is very serious.

In addition, due to the limitation of the process, the large-size germanium single crystal has about 15-20% of resistivity uniformity in the radial direction, so that the transmittance of an optical lens processed by the large-size germanium single crystal is deviated, and the performance consistency of a later-stage optical system is influenced.

Disclosure of Invention

The utility model aims to provide a device and a growth furnace for germanium single crystal growth with a fixed size, which can prepare primary crystals without rod drawing, and have low loss and high quality.

In order to solve the technical problem, the utility model provides a device for germanium single crystal growth in a shaping size, which comprises a shaping mold, wherein a step through hole is formed in the shaping mold, the small end of the step through hole is arranged at the lower part of the shaping mold, the inner wall of the small end is a profiling surface, a fixing edge is arranged on the outer surface of the upper part of the shaping mold, and the fixing edge is arranged at the bottom of a guide cylinder.

Further, fixed limit includes fixed plate and limiting plate, limiting plate and design mould integrated into one piece make, the hole of dodging has been seted up at the fixed plate middle part, the design mould passes the hole setting of dodging, the limiting plate is set up on the fixed plate surface and is fixed through bolt assembly.

Furthermore, the fixed plate surface is provided with the positioning ring groove, the draft tube bottom imbeds and sets up in the positioning ring groove.

Furthermore, a positioning convex ring is arranged on the surface of the fixing plate, and the positioning convex ring is matched with and limited by the inner wall of the bottom of the guide shell.

Further, a conical ring portion is arranged on the periphery of the fixing plate and is overlapped on the inner wall of the bottom of the guide shell.

Further, the fixed plate and the guide cylinder are integrally formed.

Further, an inclined guide surface is arranged on the outer surface of the stepped through hole corresponding to the small end.

A growth furnace comprising the apparatus of any one of the above.

The utility model has the beneficial effects that:

the crystal which can directly grow according to the appearance of the product can be directly arranged through the die, and the bar drawing treatment is not needed in the subsequent production process of the product, so that the waste of materials is reduced, the production flow is shortened, and the production efficiency is improved; meanwhile, the radial size of the crystal is small, so that the optical uniformity of the crystal is greatly improved, and the consistency of the optical characteristics of a later-stage optical system is improved.

Drawings

FIG. 1 is a schematic view of a mold of the present invention from a first perspective;

FIG. 2 is a schematic view of a second perspective of the inventive die;

FIG. 3 is a schematic cross-sectional view of the inventive die;

FIG. 4 is a schematic view of the die of the present invention in connection with a draft tube;

FIG. 5 is a schematic cross-sectional view of a portion of the structure of FIG. 4;

FIG. 6 is a schematic view of the connection of the retainer ring grooves on the retainer plate;

FIG. 7 is a schematic view of the connection of the fixing plate with the positioning protrusion ring;

FIG. 8 is a schematic view of the connection of the fixing plate with the tapered ring portion;

fig. 9 is a connection diagram of a fixing plate of an integrated structure.

Detailed Description

The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.

Referring to fig. 1 to 5, an embodiment of the apparatus for germanium single crystal growth in a fixed size according to the present invention includes a fixing mold 1, the fixing mold is provided with a step through hole 2, a small end of the step through hole is disposed at a lower portion of the fixing mold, and an inner wall of the small end is provided with a profiling surface 3, the profiling surface may be circular, square, triangular, polygonal, etc., and is designed to match with an outer peripheral shape of an actual product, the fixing mold is provided with a fixing edge 4 on an outer surface of an axially upper portion, and the fixing edge is disposed at a bottom of a draft tube 13, which is convenient for operation and installation. The shaping mold is made of graphite, so that insubstantial chemical reaction between the shaping mold and the germanium solution in the middle of the growth process is ensured.

When the device is used, a germanium raw material is put into a graphite crucible for melting, a melt of the germanium raw material is obtained after melting, then the position of the crucible is gradually adjusted upwards to be close to a shaping mold, the ascending speed is adjusted downwards, the melt is slowly ascended and can be observed from an observation window, and the melt is controlled to slowly ascend through a step through hole of the shaping mold; after the melt rises to flow over the upper port of the small end of the step through hole, a melt gathering area is gradually formed at the upper port by means of the tension of the surface of the melt, and the crucible position is stopped to rise. Then, crystal growth is carried out, after the constant temperature is kept for a period of time, seed crystals are put down, and the processes of seeding and shouldering are started; and entering an equal-diameter growth stage when the crystal grows to be equal to the size of the profiling surface. At this time, due to volume limitation of the liquid, the crystal growth proceeds by the same diameter growth, and therefore the outer periphery of the grown crystal coincides with the profile.

In conclusion, the size and the shape of the cross section of the crystal can be determined by the profiling surface of the small end of the step through hole on the shaping die, so that bar drawing is not needed, the waste of materials is reduced, the production flow is shortened, and the production efficiency is improved; and the optical uniformity of the crystal is greatly improved.

Because in the use, the design mould of different shapes corresponds the crystal of different shapes, consequently reduce use cost when changing the mould, design fixed limit for fixed plate 5 and limiting plate 6 complex structure, the limiting plate is made with design mould integrated into one piece, the hole 7 has been kept away to the fixed plate middle part has been seted up, the design mould passes and keeps away the hole setting, the limiting plate is taken to establish on the fixed plate surface and is fixed through bolt assembly 8, installation through the fixed plate, will keep away the hole and arrange the centre of growing position in, when installing the mould afterwards, need not too much regulation, directly pass and keep away after the hole fixed can, it uses as spacing hole to keep away the hole. The split design reduces the installation difficulty and has low replacement cost when damaged.

And an inclined guide surface 12 is arranged on the outer surface of the step through hole corresponding to the small end, and in the process that the shaping die stretches into the solution, the inclined guide surface can extrude and guide the scum to the outside, so that the scum at the bottom of the shaping die is prevented from entering the step through hole.

In one embodiment, referring to fig. 6, a positioning ring groove 9 is formed in the surface of the fixing plate, the bottom of the guide cylinder is embedded into the positioning ring groove, the positioning ring groove has a limiting effect, and when the fixing plate is installed, the fixing plate can find a position quickly without measurement and adjustment.

In an embodiment, referring to fig. 7, a positioning convex ring 10 is arranged on the surface of the fixing plate, the positioning convex ring is matched with the inner wall of the bottom of the draft tube for limiting, the positioning convex ring limits the fixing plate to move in the horizontal direction, and the fixing plate is convenient to mount and fix due to matching and limiting.

In an embodiment, referring to fig. 8, a tapered ring portion 11 is arranged on the periphery of the fixing plate, the tapered ring portion is arranged on the inner wall of the bottom of the guide shell, the fixing plate can be arranged in a center well by limiting the tapered structure, the shaping mold is effectively guaranteed to be located in the middle, and the tapered ring portion can be connected with the guide shell in a locking mode in order to guarantee firmness.

In an embodiment, as shown in fig. 9, the fixing plate and the guide cylinder are integrally formed, and the avoiding hole is formed in the fixing plate corresponding to the center of the guide cylinder, so that a good centering effect is achieved, and the integrally formed preparation method can reduce the assembly difficulty and the adjustment difficulty.

The utility model also discloses a growth furnace, which adopts the device, a crucible capable of lifting is arranged below the device, and a temperature field is arranged at the periphery of the crucible, so that effective crystal growth is carried out.

The above embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the utility model is all within the protection scope of the utility model. The protection scope of the utility model is subject to the claims.

Claims (8)

1. The device for germanium single crystal growth in a set size is characterized by comprising a set die, wherein a step through hole is formed in the set die, the small end of the step through hole is formed in the lower portion of the set die, the inner wall of the small end is a profiling surface, a fixed edge is arranged on the outer surface of the upper portion of the set die, and the fixed edge is arranged at the bottom of a guide cylinder.

2. The device of claim 1, wherein the fixing edge comprises a fixing plate and a limiting plate, the limiting plate is integrally formed with the shaping mold, an avoiding hole is formed in the middle of the fixing plate, the shaping mold penetrates through the avoiding hole and is arranged, and the limiting plate is arranged on the surface of the fixing plate and fixed through a bolt assembly.

3. The apparatus according to claim 2, wherein the surface of the fixing plate is provided with a positioning ring groove, and the bottom of the draft tube is embedded in the positioning ring groove.

4. The apparatus according to claim 2, wherein the surface of the fixing plate is provided with a positioning convex ring which is matched with and limited by the inner wall of the bottom of the guide shell.

5. The apparatus according to claim 2, wherein a tapered ring part is arranged on the periphery of the fixing plate, and the tapered ring part is arranged on the inner wall of the bottom of the guide shell.

6. An apparatus for shaped-dimension growth of a germanium single crystal according to claim 2, wherein said holding plate is integrally formed with the draft tube.

7. An apparatus for shape-sizing growth of a germanium single crystal according to claim 1, wherein said stepped through hole is provided with an inclined guide surface on an outer surface thereof corresponding to the small end.

8. A growth furnace comprising the apparatus of any one of claims 1 to 7.

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