CN215580446U - Voltage limiting circuit and charge pump system - Google Patents
Voltage limiting circuit and charge pump system Download PDFInfo
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- CN215580446U CN215580446U CN202121427903.XU CN202121427903U CN215580446U CN 215580446 U CN215580446 U CN 215580446U CN 202121427903 U CN202121427903 U CN 202121427903U CN 215580446 U CN215580446 U CN 215580446U
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Abstract
The utility model provides a voltage limiting circuit and a charge pump system, wherein the voltage limiting circuit comprises: the reference voltage module is used for providing a reference voltage; and the source electrode following module is connected with the output end of the reference voltage module and is used for outputting the reference voltage after the reference voltage is driven and enhanced. The voltage limiting circuit and the charge pump system provided by the utility model solve the problems that the existing voltage limiting circuit is too complex, the power consumption of the circuit is too large, and the current limiting resistance value is difficult to select.
Description
Technical Field
The utility model belongs to the field of integrated circuit design, and particularly relates to a voltage limiting circuit and a charge pump system.
Background
With the rapid development of IT technology, more and more portable devices such as smart phones, smart watches, and the like are available; at this stage, research into batteries supporting portable device applications has become a focus. The portable device requires the battery to provide more electric quantity in a small volume to ensure the long-time operation of the device, but a long-time effort is required if a breakthrough is made in the research of battery materials, so how to save power consumption and improve efficiency becomes the direction of efforts of technicians in various fields on the basis of the existing battery application.
At present, the portable device mainly uses a lithium ion battery, and the battery is an energy storage device with non-fixed voltage output: when the battery is fully charged, the voltage is 4.2V or more, and along with the consumption of the electric quantity of the battery, the voltage of the lithium ion battery is gradually reduced and even is lower than 2.5V; at normal temperature, when the battery is fully charged, the battery voltage is at 4.2V, and as the battery power is consumed, the battery voltage gradually drops to 2.5V (specifically, as shown in fig. 1) which is 2.8V or lower.
Along with the continuous powerful function of the smart phone, the consumption of electric quantity is gradually increased, and the charging power of the battery is increased to meet the requirement of a client on high charging speed; in 2020, a 40W mobile phone charger has been popular, in 2021, a certain mobile phone factory introduced a 66W mobile phone charger, and in 2022, a 120W mobile phone charger was estimated to be introduced. For a 40W mobile phone charger, the charging current of the battery can be as high as 8A; for a 66W mobile phone charger, the charging current of the battery can be as high as 13A; such a large charging current, in order to avoid heat generation, the MOS switch tube for protecting the battery must use a switch tube with a very small internal resistance, such as a 1.5 milliohm MOS switch tube with a high performance-to-price ratio. However, the on-state internal resistance of the MOS switch tube changes with the change of the gate-source voltage, and the lower the gate-source voltage of the MOS switch tube is, the larger the internal resistance of the MOS switch tube is (as shown in fig. 2 specifically); when the grid source voltage is 5V, the internal resistance of the MOS switch tube is 1.5 milliohm, and when the grid source voltage is 2.5V, the internal resistance of the MOS switch tube is suddenly changed to 2.5 milliohm, the internal resistance is increased by about 160 percent, and the amplitude is very large.
When a current of 13A flows through the MOS switch tube, if the grid source voltage is 5V, the internal resistance of the MOS switch tube is 1.5 milliohm, and the power loss of the MOS switch tube is as follows: i is2R13A 1.5m 0.25W; when the gate-source voltage is 2.5V, the internal resistance of the MOS switch tube is 2.5 milliohms, and at this time, the current of 13A flows, and the power loss of the MOS switch tube is: i is2R13A 2.5m 0.43W; in a sealed battery, no heat dissipation measure is provided, the MOS switch chip is very small, the size is only 3.5mm x 2mm, and if the size is large, the size is largeThe power consumption exceeding the normal value greatly increases the heat generation of the MOS switch tube itself. Therefore, in order to solve the problem, a charge pump circuit is usually introduced to increase the gate-source voltage of the MOS switch tube as much as possible, so that the internal resistance of the MOS switch tube chip is as small as possible within the safe working range.
In the existing scheme, the boosting method of the charge pump can be divided into closed-loop feedback with output comparison and open-loop output without output comparison feedback according to the precision of modulation voltage.
The method comprises the following steps: the closed-loop feedback with output comparison means that the boosted output of the charge pump is compared with a reference voltage to obtain a feedback circuit, so that the output voltage is stabilized at a constant value, and in order to meet the requirement of large input voltage variation, the boosting multiple is required to be larger than the multiple value of the constant output voltage and the minimum input voltage. The charge pump circuit with the output comparison closed-loop feedback has the advantages of accurate output voltage, but has the defects of complex circuit, and the like, and a comparison circuit, a reference voltage circuit and the like are needed to remove the charge pump, so that the working current consumption of the closed-loop charge pump is large, and the standby time of a battery is influenced.
The second method comprises the following steps: the charge pump booster circuit has the advantages that the circuit is simple, the defect is that when the input voltage is higher, the voltage is amplified by the boosting multiple to cause too high voltage value, in order to make up for the defect, a simultaneous-receiving voltage-stabilizing tube is usually added at the output end to limit the output voltage, because the resistance is limited by the response speed of a load, the resistance value cannot be too large, otherwise, the driving current is very small, the driving capability is limited, and the timely response is difficult; if the resistance value is too small, an excessive current is generated when the charge pump voltage is high, and the power consumption of the whole booster circuit is increased.
Therefore, it is necessary to design a new circuit to solve the above technical problems.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a voltage limiting circuit and a charge pump system, which are used to solve the problems of the prior art that the circuit is too complex, the power consumption of the circuit itself is too large, and the current limiting resistance is difficult to select.
To achieve the above and other related objects, the present invention provides a voltage limiting circuit, including:
the reference voltage module is used for providing a reference voltage;
and the source electrode following module is connected with the output end of the reference voltage module and is used for outputting the reference voltage after the reference voltage is driven and enhanced.
Optionally, the reference voltage module includes: the voltage stabilizing circuit comprises a resistor, a first transistor and a voltage stabilizing diode, wherein one end of the resistor is connected with the input voltage, the other end of the resistor is connected with the drain electrode of the first transistor, the source electrode of the first transistor is connected with the cathode of the voltage stabilizing diode, the anode of the voltage stabilizing diode is grounded, and the grid electrode of the first transistor is connected with the drain electrode of the first transistor and serves as the output end of the reference voltage module.
Optionally, the resistance of the resistor is not less than 10K Ω.
Optionally, the source follower module comprises: and a second transistor, wherein a gate of the second transistor is connected to the output terminal of the reference voltage module, a drain of the second transistor is connected to the input voltage, and a source of the second transistor is used as the output terminal of the source follower module.
Optionally, the voltage limiting circuit further includes a backflow prevention module connected between the input voltage and the drain of the second transistor.
Optionally, the anti-backflow module includes an anti-backflow diode, wherein an anode of the anti-backflow diode is connected to the input voltage, and a cathode of the anti-backflow diode is connected to a drain of the second transistor.
The present invention also provides a charge pump system, comprising:
a pre-stage boost circuit for amplifying an original input voltage to generate the input voltage;
and the voltage limiting circuit is connected with the output end of the preceding stage booster circuit and is used for performing voltage limiting processing on the input voltage to generate a reference voltage and outputting the reference voltage after the reference voltage is driven and enhanced.
Optionally, the preceding stage boost circuit includes: the at least one boosting module is connected in series when the number of the boosting modules is more than or equal to 2; the boost module includes: the boost circuit comprises a first diode, a second diode, a first capacitor and a second capacitor, wherein the anode of the first diode is connected with the original input voltage or the output end of the previous stage of the boost module, the cathode of the first diode is connected with the anode of the second diode and one end of the first capacitor, the cathode of the second diode is connected with one end of the second capacitor and serves as the output end of the boost module, the other end of the first capacitor is connected with a clock signal, and the other end of the second capacitor is connected with the inverted signal of the clock signal.
As described above, the voltage limiting circuit and the charge pump system according to the present invention have the following advantages: 1) outputting a relatively stable voltage; 2) no matter how high the output voltage of the preceding stage booster circuit is, the voltage limiting circuit can make the current consumption of the voltage limiting circuit smaller by selecting a resistor with larger resistance, thereby solving the problem of the increase of the power consumption of the charge pump system caused by the change of the original input voltage; 3) the circuit is relatively simple: no feedback loop and no reference voltage circuit; 4) the output driving capability is large.
Drawings
Fig. 1 shows a schematic diagram of voltage variation in a lithium battery power supply process.
FIG. 2 is a schematic diagram showing the variation of the internal resistance of the MOS transistor with the voltage between the gate and the source.
Fig. 3 is a circuit diagram of the charge pump system of the present invention.
Description of the reference symbols
1 Charge pump System
11 preceding stage booster circuit
111 boost module
12 voltage limiting circuit
121 reference voltage module
122 source follower module
123 backflow prevention module
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The utility model is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 3. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings rather than drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of the components in actual implementation may be changed freely, and the layout of the components may be more complicated.
Example one
As shown in fig. 3, the present embodiment provides a voltage limiting circuit, where the voltage limiting circuit 12 includes:
the reference voltage module 121 is used for generating a reference voltage Vgate0, and the reference voltage Vgate0 enables the current consumption of the module to be low;
and the source follower module 122 is connected to the output end of the reference voltage module 121, and is configured to drive and enhance the reference voltage Vgate0 for output.
Specifically, as shown in fig. 3, the reference voltage module 121 is configured to perform a voltage limiting process on the input voltage Vpre _ pump to generate the reference voltage Vgate 0. The reference voltage module 121 includes: a resistor R1, a first transistor MN0, and a zener diode D0, wherein one end of the resistor R1 is connected to the input voltage Vpre _ pump, the other end of the resistor R1 is connected to the drain of the first transistor MN0, the source of the first transistor MN0 is connected to the cathode of the zener diode D0, the anode of the zener diode D0 is grounded, and the gate of the first transistor MN0 is connected to the drain thereof and serves as the output terminal of the reference voltage module 121 to output the reference voltage Vgate 0.
In this embodiment, when the input voltage Vpre _ pump exceeds the sum of the regulated voltage of the zener diode D0 and the threshold voltage of the first transistor MN0, the first transistor MN0 is turned on, the zener diode D0 is broken down, and the voltage across the zener diode D0 is stabilized at the regulated voltage, and at this time, the reference voltage Vgate0 output by the gate of the first transistor MN0 is Vzener _ D0+ VGSMN0(ii) a Wherein Vzener _ D0 is the regulated voltage value of a voltage stabilizing diode D0, VGSMN0Is the gate-source voltage of the first transistor MN 0. When the input voltage Vpre _ pump does not exceed the sum of the regulated voltage value of the regulated diode D0 and the threshold voltage of the first transistor MN0, the first transistor MN0 is not turned on, and at this time, the reference voltage Vgate0 output by the gate of the first transistor MN0 is Vpre _ pump.
More specifically, the resistance value of the resistor R1 is not less than 10K Ω. Optionally, the resistance value of the resistor R1 ranges from 20K Ω to 10M Ω (inclusive). It should be noted that, when determining the resistance value of the resistor R1, the power consumption of the circuit and the chip area should be considered comprehensively, so as to avoid the problem that the power consumption of the circuit is too high due to too small resistance value of the resistor R1 and the chip area is occupied due to too large resistance value of the resistor R1, which is not beneficial to the integration of the chip.
More specifically, the zener diode D0 is a zener diode, and its zener value is between 4V and 7V (including the end points), so as to obtain a temperature coefficient close to zero, and thus, it can be used as a standard zener diode. Optionally, the zener has a regulated value of 5V.
Specifically, as shown in fig. 3, the source follower module 122 includes: a second transistor MN1, wherein a gate of the second transistor MN1 is connected to the output terminal of the reference voltage module 121 to receive the reference voltage Vgate0, a drain of the second transistor is connected to the input voltage Vpre _ pump, and a source of the second transistor is used as the output terminal of the source follower module 122. In specific application, the driving capability of the second transistor MN1 can be adjusted by adjusting the width-to-length ratio and the gate-to-source voltage drop (VGS) of the second transistor, so that the instantaneous driving current of the second transistor MN1 can be directly equal to the maximum output current of the charge pump, and power devices such as NMOS, DMOS, IGBT and HEMT can be driven to be turned on in time.
In this embodiment, a reference voltage Vgate0 is applied to the gate of the second transistor MN1, thereby obtaining an output voltage Vpump at the source of the second transistor MN 1. When the reference voltage Vgate0 is Vzener _ D0+ VGSMN0When the output voltage Vpump is Vgate 0-VGSMN1＝Vzener_D0+VGSMN0–VGSMN1≡ Vzener _ D0 where VGSMN1Is the gate-source voltage of the second transistor MN 1; as can be seen from the above equation, the voltage value of the output voltage Vpump is approximately the regulated value of the zener D0 and is a relatively constant value no matter how high the value of the input voltage Vpre _ pump is. When the reference voltage Vgate0 is Vpre _ pump, the output voltage Vpump is Vpre _ pump-VGSMN1。
Specifically, as shown in fig. 3, the voltage limiting circuit 12 further includes a backflow prevention module 123 connected between the input voltage Vpre _ pump and the drain of the second transistor MN1 to ensure the stability of the output voltage Vpump. More specifically, the anti-backflow module 123 includes an anti-backflow diode D1, wherein an anode of the anti-backflow diode D1 is connected to the input voltage Vpre _ pump, and a cathode of the anti-backflow diode D1 is connected to a drain of the second transistor MN 1.
Example two
As shown in fig. 3, the present embodiment provides a charge pump system, where the charge pump system 1 includes:
the pre-stage boost circuit 11 is configured to amplify an original input voltage Vin to generate the input voltage Vpre _ pump;
and a voltage limiting circuit 12, connected to an output end of the pre-stage voltage boosting circuit 11, configured to perform voltage limiting processing on the input voltage Vpre _ pump to generate a reference voltage Vgate0, and perform drive enhancement on the reference voltage Vgate0 to output the voltage.
Specifically, as shown in fig. 3, the preceding stage booster circuit 11 includes: at least one boosting module 111, wherein when the number of the boosting modules is greater than or equal to 2, the plurality of boosting modules 111 are connected in series; the boosting module 111 includes: a first diode D2, a second diode D3, a first capacitor C1 and a second capacitor C2, wherein an anode of the first diode D2 is connected to the original input voltage Vin or an output terminal of the boost module 111 at a previous stage, a cathode of the first diode D2 is connected to an anode of the second diode D3 and one end of the first capacitor C1, a cathode of the second diode D3 is connected to one end of the second capacitor C2 and serves as an output terminal of the boost module 111, the other end of the first capacitor C1 is connected to the clock signal CLK, and the other end of the second capacitor C2 is connected to an inverted signal of the clock signal CLK. In a specific application, the number of the boosting modules 111 may be set according to an actually required voltage amplification factor, which is not limited in this example. Please refer to the first embodiment for the specific circuit of the voltage limiting circuit 12, which is not described herein.
Referring to fig. 3, a specific operation principle of the charge pump system 1 of the present embodiment is described: the pre-stage booster circuit 11 is powered on the basis of a lithium battery, namely, the original input voltage Vin varies between 2.5V and 4.2V along with the voltage of the lithium battery, the amplification factor of the pre-stage booster circuit 11 is 3 times, the resistance value of the resistor R1 is 2.5M omega, and the voltage stabilizing value of the voltage stabilizing diode D0 is 5V. .
1) The original input voltage Vin passes through the pre-stage boost circuit 11 with 3 times amplification factor, and the obtained input voltage Vpre _ pump is:
vpre _ pump 2.5V 3 times-3 diode drop 7.5V-3 0.7V 5.4V;
vpre _ pump 4.2V 3 times-3 diode drop 12.6V-3 0.7V 10.5V;
2) when Vpre _ pump is 5.4V and is not enough to drive the first transistor MN0 to turn on, Vgate0 is Vpre _ pump 5.4V and Vpump is Vpre _ pump-VGSMN15.4V-0.7V-4.7V; when Vpre _ pump is 10.5V and is sufficient to drive the first transistor MN0 to turn on, Vgate0 is Vzener _ D0+ VGSMN0，Vpump＝Vgate0–VGSMN1＝Vzener_D0+VGSMN0–VGSMN1≌Vzener_D0＝5V。
3) When Vpre _ pump is 5.4V, the current flowing through the resistor R1 is IR1At this time, since Vpre _ pump 5.4V is very close to the zener value of the zener diode D0, the current flowing through the resistor R1 is about several hundreds of nA or less; when Vpre _ pump is 10.5V, the current flowing through resistor R1 is: i isR1＝(10.5-Vzener_D0-VGSMN0)/R1＝(10.5-5.0-0.7)V/2.5M＝4.8V/2.5M＝1.92μA。
Therefore, in the case of lithium battery power supply, due to the existence of the voltage limiting circuit 12, even though the original input voltage is amplified by the pre-stage voltage boost circuit 11 and a larger input voltage is obtained, the output voltage is relatively stable, and the current flowing through the resistor R1 is small, so that the power consumption of the whole charge pump system 1 is low.
In summary, the voltage limiting circuit and the charge pump system of the present invention have the following advantages: 1) outputting a relatively stable voltage; 2) no matter how high the output voltage of the preceding stage booster circuit is, the voltage limiting circuit can make the current consumption of the voltage limiting circuit smaller by selecting a resistor with larger resistance, thereby solving the problem of the increase of the power consumption of the charge pump system caused by the change of the original input voltage; 3) the circuit is relatively simple: no feedback loop and no reference voltage circuit; 4) the output driving capability is large. Therefore, the utility model effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the utility model. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (8)
1. A voltage limiting circuit, wherein the voltage limiting circuit comprises:
the reference voltage module is used for providing a reference voltage;
and the source electrode following module is connected with the output end of the reference voltage module and is used for outputting the reference voltage after the reference voltage is driven and enhanced.
2. The voltage limiting circuit of claim 1 wherein the reference voltage module comprises: the voltage regulator comprises a resistor, a first transistor and a voltage stabilizing diode, wherein one end of the resistor is connected with the input voltage, the other end of the resistor is connected with the drain electrode of the first transistor, the source electrode of the first transistor is connected with the cathode of the voltage stabilizing diode, the anode of the voltage stabilizing diode is grounded, and the grid electrode of the first transistor is connected with the drain electrode of the first transistor and serves as the output end of the reference voltage module.
3. The voltage limiting circuit of claim 2 wherein the resistance of the resistor is not less than 10K Ω.
4. The voltage limiting circuit of claim 1 wherein the source follower module comprises: and a second transistor, wherein a gate of the second transistor is connected to the output terminal of the reference voltage module, a drain of the second transistor is connected to the input voltage, and a source of the second transistor is used as the output terminal of the source follower module.
5. The voltage limiting circuit of claim 4 wherein the voltage limiting circuit further comprises: and the backflow prevention module is connected between the input voltage and the drain electrode of the second transistor.
6. The voltage limiting circuit of claim 5 wherein the back-flow prevention module comprises: and the anode of the anti-backflow diode is connected with the input voltage, and the cathode of the anti-backflow diode is connected with the drain of the second transistor.
7. A charge pump system, the charge pump system comprising:
a pre-stage boost circuit for amplifying an original input voltage to generate the input voltage;
the voltage limiting circuit as claimed in any one of claims 1 to 6, connected to an output terminal of the pre-stage boost circuit, for performing voltage limiting processing on the input voltage to generate a reference voltage, and performing drive-enhanced output on the reference voltage.
8. The charge pump system of claim 7, wherein the pre-stage boost circuit comprises: the at least one boosting module is connected in series when the number of the boosting modules is more than or equal to 2; the boost module includes: the boost circuit comprises a first diode, a second diode, a first capacitor and a second capacitor, wherein the anode of the first diode is connected with the original input voltage or the output end of the previous stage of the boost module, the cathode of the first diode is connected with the anode of the second diode and one end of the first capacitor, the cathode of the second diode is connected with one end of the second capacitor and serves as the output end of the boost module, the other end of the first capacitor is connected with a clock signal, and the other end of the second capacitor is connected with the inverted signal of the clock signal.
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| CN202121427903.XU CN215580446U (en) | 2021-06-25 | 2021-06-25 | Voltage limiting circuit and charge pump system |
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| CN202121427903.XU CN215580446U (en) | 2021-06-25 | 2021-06-25 | Voltage limiting circuit and charge pump system |
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Effective date of registration: 20220222 Address after: Room 603, No. 5, Meiyuan New Village, Pudong New Area, Shanghai 200120 Patentee after: Xiao Chuan Address before: 201206 room 603, building C, No. 3000, Longdong Avenue, Pudong New Area, Shanghai Patentee before: SHANGHAI HUIRUI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220324 Address after: 518000 201B, building 5, northwest Shenjiu science and technology entrepreneurship Park, the intersection of Taohua road and Binlang Road, Fubao community, Fubao street, Futian District, Shenzhen, Guangdong Province Patentee after: Spin Tech (Shenzhen) Co.,Ltd. Address before: Room 603, No. 5, Meiyuan New Village, Pudong New Area, Shanghai 200120 Patentee before: Xiao Chuan |