CN215579068U - Antenna with a shield - Google Patents
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- CN215579068U CN215579068U CN202120241574.3U CN202120241574U CN215579068U CN 215579068 U CN215579068 U CN 215579068U CN 202120241574 U CN202120241574 U CN 202120241574U CN 215579068 U CN215579068 U CN 215579068U
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Abstract
The utility model provides an antenna, and belongs to the technical field of communication. The antenna of the present invention comprises: a dielectric layer having a first surface and a second surface oppositely disposed along a thickness direction thereof; the reference electrode layer is arranged on the first surface of the dielectric layer, and at least one side edge of the reference electrode layer is provided with a first notch which is an arc-shaped notch; the at least one radiation element is arranged on the second surface of the medium layer, and the orthographic projection of the at least one radiation element on the medium layer falls into the orthographic projection of the first notch on the medium layer; the first microstrip line is arranged on the second surface of the dielectric layer, is electrically connected with the radiating element and at least partially overlaps with the orthographic projection of the reference electrode layer on the dielectric layer.
Description
Technical Field
The utility model belongs to the technical field of antennas, and particularly relates to an antenna.
Background
Compared with 4G (the 4th generation mobile communication technology; fourth generation mobile communication technology), 5G (5th generation mobile communication technology; fifth generation mobile communication technology) has the advantages of higher data rate, larger network capacity, lower time delay and the like. The 5G frequency planning includes two parts, namely a low frequency band and a high frequency band, wherein the low frequency band (3-6GHz) has good propagation characteristics and very rich spectrum resources, so that the development of antenna units and arrays for low frequency band communication applications gradually becomes a research and development hotspot at present.
Based on the practical application scenario of 5G mobile communication, the 5G low-band antenna should have technical features such as high gain, miniaturization, and wide frequency band. The microstrip antenna is a commonly used antenna form which has a simple structure, is easy to array and can realize high gain, but the application of the microstrip antenna in 5G low-frequency mobile communication is restricted by the narrow bandwidth and the large antenna size in a low-frequency band.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to at least one of the technical problems of the prior art, and provides an antenna and a method for manufacturing the same.
In a first aspect, an embodiment of the present disclosure provides an antenna, which includes:
a dielectric layer having a first surface and a second surface oppositely disposed along a thickness direction thereof;
the reference electrode layer is arranged on the first surface of the dielectric layer, and at least one side edge of the reference electrode layer is provided with a first open slot which is an arc open slot;
at least one radiation element arranged on the second surface of the medium layer, wherein the orthographic projection of the at least one radiation element on the medium layer falls into the orthographic projection of the first notch on the medium layer;
the first microstrip line is arranged on the second surface of the dielectric layer, is electrically connected with the radiating element and at least partially overlaps with the orthographic projection of the reference electrode layer on the dielectric layer.
The radiation elements and the first slots are arranged in a one-to-one correspondence manner, and orthographic projections of centers of the radiation elements and the first slots on the dielectric layer are arranged at a certain distance.
The microstrip antenna further comprises a feed structure, and the feed structure is electrically connected with the first microstrip line.
The reference electrode layer is provided with a first side edge and a second side edge which are oppositely arranged along the length direction of the reference electrode layer; the first slot is disposed on at least one of the first side and the second side; the feed structure comprises at least one feed structure, and one feed structure is electrically connected with the first microstrip line connected with the radiation element positioned on the same side.
Wherein, the first side and the second side of the reference electrode layer are both provided with first slots, and the first slots on the first side and the second side are both 2nEach feed structure comprises an n-level second microstrip line;
one second microstrip line positioned at the 1 st level is connected with two adjacent first microstrip lines, and the first microstrip lines connected with different second microstrip lines positioned at the 1 st level are different; one second microstrip line at the mth level is connected with two adjacent second microstrip lines at the m-1 level, and the second microstrip lines at the m-1 level, which are connected with different second microstrip lines at the mth level, are different; wherein n is more than or equal to 2, m is more than or equal to 2 and less than or equal to n, and m and n are integers.
The reference electrode layer comprises a first sub-reference electrode layer and a second sub-reference electrode layer which are arranged side by side, the side opposite to the first sub-reference electrode layer is the first side, and the side opposite to the second sub-reference electrode layer is the second side.
Wherein the feed structure further comprises a converter; wherein the converter comprises a first feed port, a second feed port, and a third feed port; the second feed port and the third feed port are respectively connected with the second microstrip lines of the nth stage of the two different feed structures.
The antenna is arranged in mirror symmetry along the extending direction of the wide perpendicular bisector of the reference electrode layer.
The feeding structure is arranged along the reference electrode layer in mirror symmetry along the extending direction of the wide perpendicular bisector.
Wherein only one of the first side and the second side of the reference electrode layer is provided with a first slot, and the number of the first slots is 2nEach feed structure comprises an n-level second microstrip line;
one second microstrip line positioned at the 1 st level is connected with two adjacent first microstrip lines, and the first microstrip lines connected with different second microstrip lines positioned at the 1 st level are different; one second microstrip line at the mth level is connected with two adjacent second microstrip lines at the m-1 level, and the second microstrip lines at the m-1 level, which are connected with different second microstrip lines at the mth level, are different; wherein n is more than or equal to 2, m is more than or equal to 2 and less than or equal to n, and m and n are integers.
Wherein the feed structure further comprises a converter; the converter comprises a first feeding port and a second feeding port, and the second feeding port is connected with the second microstrip line of the nth stage of the feeding structure.
The dielectric layer comprises a first sub-dielectric layer and a second sub-dielectric layer which are arranged in a laminated mode; the reference electrode layer is arranged on one side of the first sub-medium layer, which is far away from the second sub-medium layer, the radiation element and the first microstrip line are arranged on one side of the second sub-medium layer, which is far away from the first sub-medium layer, and the first sub-medium layer and the second sub-medium layer are connected through an adhesive layer.
The first sub-dielectric layer and the second sub-dielectric layer are made of glass materials.
And the distances between two adjacent first slots positioned on the same side of the reference electrode layer are the same.
And a second slot is arranged between two adjacent first slots positioned on the same side of the reference electrode layer.
Wherein the second slot comprises a rectangular slot.
Wherein, the orthographic projection of the radiation element on the dielectric layer is positioned in the range defined by the dielectric layer corresponding to the first notch.
The first microstrip line is a first part and a second part which are electrically connected, the first part is connected with the radiating element, the second part is electrically connected with the feed structure, and the extending direction of the first part is perpendicular to the extending direction of the second part.
Wherein the impedance of the first microstrip line is 50 Ω.
And a cover plate is arranged on one side of the first microstrip line and the radiating element, which is deviated from the second surface of the dielectric layer.
In a second aspect, an embodiment of the present disclosure provides a method for manufacturing an antenna, including:
providing a dielectric layer;
forming a pattern comprising a reference electrode layer on the first surface of the dielectric layer through a composition process; wherein, at least one side edge of the reference electrode layer is provided with a first open slot which is an arc open slot;
forming a pattern comprising a radiation element and a first microstrip line on the second surface of the dielectric layer by a composition process; wherein an orthographic projection of one of the radiating elements and one of the first slots on the dielectric layer at least partially overlaps; the first microstrip line is electrically connected with the radiating element and at least partially overlapped with the orthographic projection of the reference electrode layer on the dielectric layer.
The dielectric layer comprises a first sub-dielectric layer and a second sub-dielectric layer which are arranged in a laminated mode; the method comprises the following steps:
forming the reference electrode layer on one side of the first sub-medium layer, which is far away from the second sub-medium layer;
forming the radiating element and the first microstrip line on one side of the second sub-medium layer, which is far away from the first sub-medium layer;
and bonding the first sub-medium layer and the second sub-medium layer together through a bonding layer.
The first sub-dielectric layer and the second sub-dielectric layer are made of glass materials.
The method comprises the steps of forming a dielectric layer on a first surface of a substrate, forming a pattern comprising a radiating element and a first microstrip line on the dielectric layer on the first surface of the dielectric layer by a patterning process, and forming a feed structure on the dielectric layer.
Drawings
Fig. 1 is a cross-sectional view of an antenna of an embodiment of the present disclosure;
fig. 2 is a top view of an antenna of an embodiment of the present disclosure;
fig. 3 is a schematic diagram of an antenna unit of an embodiment of the present disclosure;
fig. 4a is a cross-sectional view of another antenna of an embodiment of the present disclosure;
fig. 4b is a cross-sectional view of another antenna of an embodiment of the present disclosure;
fig. 5 is a top view of another antenna of an embodiment of the present disclosure;
fig. 6 is a cross-sectional view of another antenna of an embodiment of the present disclosure;
fig. 7 is S of the 2 x 8 antenna array ports shown in fig. 511A parameter curve graph;
fig. 8 is a planar pattern of the 2 x 8 antenna array of fig. 5 at a frequency f of 3.75 GHz;
fig. 9 is a polar representation of the planar pattern of the 2 x 8 antenna array of fig. 5 at a frequency f of 3.75 GHz;
fig. 10 is a top view of another antenna of an embodiment of the present disclosure;
fig. 11 is a top view of another antenna of an embodiment of the present disclosure.
Detailed Description
In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. Also, the use of the terms "a," "an," or "the" and similar referents do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
Note that S mentioned in the following description is11Refers to one of the S parameters, represents the return loss characteristic, and generally looks at the dB value and the impedance characteristic of the loss through a network analyzer. Parameter S11The better the transmission efficiency of the antenna, the larger the value, the more the energy reflected by the antenna itself is, and thus the worse the efficiency of the antenna is.
In a first aspect, fig. 1 is a cross-sectional view of an antenna of an embodiment of the present disclosure; fig. 2 is a top view of an antenna of an embodiment of the present disclosure; as shown in fig. 1 and 2, the present disclosure provides an antenna, which includes a dielectric layer 1, a reference electrode layer, a radiation element 31, and a first microstrip line 32; wherein, dielectric layer 1 includes first surface and second surface along its thickness direction relative setting, for example: the first surface is the lower surface shown in fig. 1 and the second surface is the upper surface shown in fig. 1. The reference electrode layer is arranged on the first surface, and at least one side edge of the reference electrode layer is provided with a first open slot 21, and the first open slot 21 is an arc-shaped open slot. The radiation elements 31 are arranged on the second surface of the medium layer 1, and the orthographic projection of one radiation element 31 on the medium layer 1 is positioned in the range of the orthographic projection of one first slot 21 on the medium layer 1, for example, the radiation elements 31 are arranged in one-to-one correspondence with the first slots 21. The first microstrip line 32 is disposed on the second surface of the dielectric layer 1, and the first microstrip line 32 is electrically connected to the radiation element 31 and at least partially overlaps with an orthographic projection of the reference electrode layer on the dielectric layer 1. The first microstrip line 32 is configured to feed the radiating element 31.
It should be noted that, in the embodiment of the present disclosure, the radiation element 31 and the first slot 21 are provided in a one-to-one correspondence manner, for example, where the first slot 21 is an arc-shaped slot, and accordingly, a circular metal patch structure is preferably adopted to adapt to the radiation element 31 with the first slot 21, as shown in fig. 2, in the embodiment of the present disclosure, the shape of the radiation element 31 is taken as a circle, but it should be understood that, in an actual product, the radiation element 31 may adopt a plate-shaped element such as an ellipse, a semicircle, a polygon, and the like.
I.e. as shown in fig. 2. In addition, the reference electrode layer includes, but is not limited to, the ground electrode layer 2, and in the embodiment of the present disclosure, the reference electrode layer is taken as the ground electrode layer 2 for an example.
In the antenna of the embodiment of the present disclosure, an arc-shaped slot is disposed on the ground electrode layer 2, the radiating element 31 is a circular metal patch, and fig. 3 is a schematic diagram of an antenna unit of the embodiment of the present disclosure; as shown in fig. 3, a first slot 21 on the ground electrode layer 2 and a radiating element 31 connected to a first microstrip line 32 constitute an antenna unit; in the ultra-wideband high frequency band, the radiation element 31 is used as the main radiation source, and the structural prototype thereof is equivalent to a monopole antenna. The radiating element 31 and the circular arc shaped first slot 21 increase the antenna's capacitance in the low frequency band. Simulation verification proves that the frequency band of the antenna unit can be widened, and the working bandwidth is 1.22GHz (3.28-4.5 GH)z，S11＜-10dB)/1.34GHz(3.16-4.5GHz，S11< -10 dB). At the same time, the antenna unit is made to have a size of only 25mm by 1.5mm by combining with a miniaturized design. In order to meet the requirements of high gain and wide bandwidth, the antenna units are arrayed to obtain the antenna of the embodiment of the disclosure. For example, the antenna elements shown in fig. 3 are arrayed, and a mirror image arrangement is adopted, so as to obtain 2 × 8 array antennas. The gain of the array antenna can reach 10.59dBi at 3.75GHz, and the impedance bandwidth is 1.34GHz (3.16-4.5GHz, S)11＜-10dB)/1.5GHz(3-4.5GHz，S11< -6dB), the size of the array antenna is only about 132.8mm 375mm 1.5mm, and it can be seen that the antenna array of the embodiment of the present disclosure has the technical features of wide bandwidth, high gain, miniaturization, and the application of the embodiment of the present disclosure in 5G mobile communication of n77(3.3-4.2GHz) and n78(3.3-3.8GHz) frequency bands.
In some examples, there is a certain spacing in the orthographic projection of the centers of both the radiating element 31 and the first slot 21 on the dielectric layer 1. For example: when the radiation element 31 is circular, the orthographic projections of the circle centers of the radiation element 31 and the first slot 21 on the medium layer 1 have a certain distance; when the radiation element 31 is rectangular or square, a certain distance exists between the orthographic projection of the intersection point of the connecting lines of the diagonals of the radiation element 31 on the dielectric layer 1 and the orthographic projection of the circle center of the first slot 21 on the dielectric layer 1. In this way an optimal impedance matching can be achieved.
In some examples, the antenna includes not only the above-described structure but also a second slot 22 disposed between two adjacent first slots 21 on the same side of the ground electrode layer 2, the second slot 22 including, but not limited to, a rectangular slot.
In some examples, a cover plate 4 is further provided above the second surface of the antenna structure, facing away from the dielectric layer 1, of the first microstrip line 32 and the radiating element 31, for protecting the respective elements on the antenna structure. The cover plate 4 may be made of glass. It should be noted that the cover plate 4 and the layer where the radiation element 31 and the first microstrip line 32 are located are fixed by transparent optical cement.
In some examples, fig. 4a is a cross-sectional view of another antenna of an embodiment of the present disclosure; as shown in fig. 4a, the dielectric layer 1 in the embodiment of the present disclosure includes a first sub-dielectric layer 11 and a second sub-dielectric layer 12 which are stacked, where a surface of the first sub-dielectric layer 11 away from the second sub-dielectric layer 12 is used as a first surface of the dielectric layer 1, a surface of the second sub-dielectric layer 12 away from the first sub-dielectric layer 11 is used as a second surface of the dielectric layer 1, that is, the ground electrode layer 2 is disposed on a side of the first sub-dielectric layer 11 away from the second sub-dielectric layer 12, and the radiation element and the first microstrip line are disposed on a side of the second sub-dielectric layer 12 away from the first sub-dielectric layer 11. In addition, the first sub-medium layer 11 and the second sub-medium layer 12 are bonded together by an adhesive layer 13. In some examples, the first sub-dielectric layer 11 and the second sub-dielectric layer 12 may be made of a material including, but not limited to, glass, so that the antenna may be at least partially transparent, and the antenna may be light and thin. In some examples, the material of the adhesive layer 13 includes, but is not limited to, a transparent optical glue.
In some examples, fig. 4b is a cross-sectional view of another antenna of an embodiment of the present disclosure; as shown in fig. 4b, the antenna structure is substantially the same as that shown in fig. 4a, except that the ground electrode layer 2 is disposed on the first sub-medium layer 11 side close to the second sub-medium layer 12, so that the ground electrode layer 2 can be protected by the second sub-medium layer 12.
In some examples, the antenna includes not only the above structure, but also a feeding structure 5 on the second surface of the dielectric layer 1, the feeding structure 5 being connected to the first microstrip line 32 and configured to feed the first microstrip line 32. The feed structure 5 may adopt a microstrip line connection converter 52 structure. For example: the feeding structure 5 comprises at least one feeding structure 51 and a converter 52, and each feeding structure 51 adopts a power dividing network formed by connecting a plurality of second microstrip lines 511. If only one side of the ground electrode layer 2 of the antenna is provided with the first slots 21, a radiation element 31 is correspondingly arranged at each position of the first slots 21. The feed structure 51 may then comprise only one feed structure 51. The number of radiating elements 31 in this case is 2nN > 2, and n is an integer; the number of the first microstrip lines 32 is also 2nThe first microstrip lines 32 are connected to the radiating elements 31 in a one-to-one correspondence. The corresponding feed structure 51 includes n-level second microstrip lines 511, one second microstrip line 511 located at level 1 is connected to two adjacent first microstrip lines 32, and the first microstrip lines 32 connected to different second microstrip lines 511 located at level 1 are different; one second microstrip line 511 at the mth stage is connected with two adjacent second microstrip lines 511 at the m-1 th stage, and the second microstrip lines 511 at the m-1 st stage connected with different second microstrip lines 511 are different; wherein m is more than or equal to 2 and less than or equal to n, and m is an integer. At this time, the number of the nth stage second microstrip lines 511 is one, the nth stage second microstrip lines 511 are connected to the converter 52, and the converter 52 is configured to feed the microwave signal. If the first slots 21 are disposed on two opposite sides of the ground electrode layer 2, and the radiation element 31 is disposed at the position of each first slot 21, then the feeding structure 5 may include two feeding structures 51, and each feeding structure 51 may also adopt the above structure, except that the transformer 52 in the feeding structure 5 may adopt a three-port transformer 52, in which case, the nth-stage second microstrip lines 511 of the two feeding structures 51 are respectively connected to two different ports of the transforming structure. In order to clarify the antenna structure in the embodiments of the present disclosure, the antenna structure in the embodiments of the present disclosure is specifically described below with n being 3.
In one example, fig. 5 is a top view of another antenna structure of an embodiment of the present disclosure; as shown in fig. 5, taking the 2-by-8 array antenna as an example, two sides of the ground electrode layer 2 along the length direction of the antenna are respectively a first side and a second side, the first side and the second side are both provided with 8 first slots 21, and meanwhile, one radiation element 31 is correspondingly provided at any position of one first slot 21, that is, 8 radiation elements 31 are provided on each side. Each radiating element 31 is connected to one first microstrip line 32. The feed structure 5 on the second surface of the dielectric layer 1 of the antenna comprises two feed structures 51 and a switch 52; the switch 52 may be a T-type switch 52, a Y-type switch 52, etc., that is, the switch 52 includes a first feeding port, a second feeding port and a third feeding port. Each feed structure 51 includes 3-level second microstrip lines 511, each of the second microstrip lines 511 located at the 1 st level is connected to two adjacent first microstrip lines 32, and the first microstrip lines 32 connected to different second microstrip lines 511 located at the 1 st level are different, for example, the 1 st second microstrip line 511 located at the 1 st level is connected to the first microstrip lines connected to the 1 st and 2 nd radiation units from top to bottom, and the 2 nd second microstrip line 511 located at the 1 st level is connected to the first microstrip lines connected to the 3 rd and 4th radiation units. Each of the second microstrip lines 511 located at the 2 nd level connects two adjacent second microstrip lines 511 located at the 1 st level, and the second microstrip lines 511 located at the 1 st level to which different second microstrip lines 511 located at the 2 nd level are connected are different, for example: the 1 st second microstrip line 511 at the 2 nd level from top to bottom is connected with the 1 st and 2 nd second microstrip lines 511 at the 1 st level; the 2 nd second microstrip line 511 of the 2 nd level is connected with the 3 rd and 4th second microstrip lines 511 located at the 1 st level; the second microstrip line 511 at the 3 rd stage is connected to the two second microstrip lines 511 at the 2 nd stage. With reference to fig. 4, the second feeding port and the third feeding port of the T-shaped transformer 52 are respectively connected to the 3 rd-level second microstrip lines 511 of the two feeding structures 51, and it can be seen that only the microwave signal fed by the first feeding structure 51 of the T-shaped transformer 52 is divided into two, two and four by three levels of power by the left and right two feeding structures 51 including the three-level second microstrip lines 511, so as to implement a sixteen-by-2 × 8 antenna array design.
With reference to fig. 5, the feeding structure 5 in the antenna is directly electrically connected to the first microstrip line 32, that is, the level 1 second microstrip line 511 is directly connected to the first microstrip line, at this time, the first microstrip line 32 and the second microstrip line 511 may be disposed on the same layer, and the same material is used, that is, a pattern including the first microstrip line 32 and the second microstrip line 511 is formed in the same patterning process. Fig. 6 is a cross-sectional view of another antenna of an embodiment of the present disclosure; as shown in fig. 6, the feeding structure 5 and the first microstrip line 32 are respectively disposed on two opposite surfaces of the second sub-medium layer 12, and at this time, the orthogonal projection of the second microstrip line 511 in the feeding structure 5 and the first microstrip line 32 on the first sub-medium layer 11 at least partially overlaps, so that a microwave signal can be fed onto the first microstrip line 32 by coupling feeding and radiated by the radiation element 31.
With reference to fig. 5, the first slots 21 on the first side of the ground electrode layer 2 are uniformly arranged, the first slots 21 on the second side may also be uniformly arranged, correspondingly, the radiation elements 31 disposed in one-to-one correspondence with the first slots 21 on the first side are uniformly arranged, the radiation elements 31 disposed in one-to-one correspondence with the first slots 21 on the second side are uniformly arranged, and the arrangement manner of the first microstrip lines 32 connected to the radiation elements 31 is the same, in this case, the first slots 21 are arranged in mirror symmetry along the extending direction of the wide perpendicular bisector of the ground electrode layer 2, the radiation elements 31 are in mirror symmetry, and the first microstrip lines 32 are symmetrical; the corresponding feed structure 5 adopts a three-level power sharing structure, and the feed structure 5 is arranged in a mirror symmetry mode along the first notch 21 in the central axis of the length direction of the grounding electrode layer 2.
Fig. 7 is a graph of the S11 parameter for the 2 x 8 antenna array ports shown in fig. 5; as shown in FIG. 7, the impedance bandwidth of the antenna array is 1.34GHz (3.16-4.5GHz, S)11＜-10dB)/1.5GHz(3-4.5GHz， S11< -6 dB). Fig. 8 is a planar pattern of the 2 x 8 antenna array of fig. 5 at a frequency f of 3.75 GHz;
fig. 9 is a polar form of the planar pattern of the 2 x 8 antenna array of fig. 5 at a frequency f of 3.75GHz, the gain of the antenna array being 10.59dBi and the half power lobe width being 10 °/23 ° at a frequency of 3.75GHz as shown in fig. 8 and 9.
In another example, fig. 10 is a top view of another antenna of an embodiment of the present disclosure; as shown in fig. 5, substantially the same as the above example, the difference is that the ground electrode layer 2 includes a first sub-ground electrode layer 201 and a second sub-ground electrode layer 202 provided side by side; wherein, the side of the first sub-ground electrode layer 201 opposite to the second sub-ground electrode layer 202 is used as the first side of the ground electrode layer 2, that is, the first open slot 21 and the second open slot 22 are disposed on the side; the side of the second sub-ground electrode layer 202 opposite to the first sub-ground electrode layer 201 serves as the first side of the ground electrode layer 2, i.e., the first open groove 21 and the second open groove 22 are provided on the side. In addition, the first sub-ground electrode layer 201 and the second sub-ground electrode layer 202 are electrically connected, for example, they are integrally formed. The feed structure in this antenna is substantially the same as that in the antenna shown in fig. 5 and will not be described in detail here. In another example, fig. 11 is a top view of another antenna structure of an embodiment of the present disclosure; as shown in fig. 5, the difference is that a first slot 21 is disposed on one of the first side and the second side of the ground electrode layer 2, and fig. 8 illustrates that the first slot 21 is disposed only on the first side, where the power feeding structure 5 includes only one power feeding structure 51, and the structure of the power feeding structure 51 is the same as the above structure, and therefore, the description thereof is not repeated. In addition, in the feeding structure 5, the converter 52 may adopt a two-port feeding structure 5, for example, including a first feeding port and a second feeding port, the second feeding port is connected to the 3 rd-level second microstrip line 511, and the first feeding port may be used to feed the microwave signal. Regardless of any of the above antenna structures, in some examples, the orthographic projection of the centers of the correspondingly disposed first slot 21 and the radiation element 31 on the dielectric layer 1 has a certain distance, that is, the centers of the correspondingly disposed first slot 21 and the radiation element 31 have an offset, and this arrangement facilitates achieving optimal impedance matching.
In some examples, the first microstrip line 32 may adopt an L-shaped structure, which includes a first portion and a second portion electrically connected, the first portion is connected with the radiating element 31, the second portion is connected with the feeding structure 5 (for example, connected with the level 1 second microstrip line 511), and the extending direction of the first portion is perpendicular to the extending direction of the second portion. For the connecting corners of the first and second portions, there may be rounded or flat chamfers. The connecting corner of the first part and the second part is preferably not a right angle, so that the microwave signal is prevented from being reflected at the position, and the transmission loss of the microwave signal is prevented from being increased.
In some examples, the first microstrip line 32 is a 50 Ω microstrip line, that is, the impedance of the first microstrip line 32 is about 50 Ω. Of course, a microstrip line with corresponding impedance may be selected as the first microstrip line 32 according to the gain parameter requirement of the antenna structure.
In some examples, the arc of the first slot 21 is around 200-300, and may be 250, for example. The first slot 21 has a chord length of about 20mm to 25mm, and may be 22.7mm, for example. In the present embodiment, the extending direction of the chord of the first slot 21 is parallel to the length direction of the ground electrode layer 2. In some examples, the distance between adjacent first slots 21 on the same side of the ground electrode layer 2 is about 40mm to 60mm, for example, 50 mm. In this case, if the second slot 22 is provided between the adjacent first slots 21, the depth and width of the second slot 22 are both about 20mm to 30mm, for example, the depth and width of the second slot 22 are both 25 mm.
In some examples, the radiating element 31 has a size of about 2mm-3mm, for example, 2.4 mm.
In some examples, the materials of the ground electrode layer 2, the first microstrip line 32, the second microstrip line 511, and the radiating element 31 include, but are not limited to, aluminum or copper.
In some examples, the dielectric layer 1, the first sub-dielectric layer 11, and the second sub-dielectric layer 12 may be made of glass, in which case, the antenna structure using the glass material may achieve partial light transmission and be light and thin. In some examples, the dielectric layer 1 may be made of glass having a dielectric constant of 5.2, which has the characteristics of high efficiency, light weight, low cost, easy mass production, good light transmittance, etc. In some examples, dielectric layer 1 has a thickness of about 0.5mm to 2mm, for example 1 mm. It should be noted that, in the embodiment of the present disclosure, the dielectric layer 1, the first sub-dielectric layer 11, and the second sub-dielectric layer 12 all include, but are not limited to, a glass material, and the materials of these layers may be flexible materials, such as polyimide or transparent optical cement.
To sum up, the antenna structure provided by the embodiment of the present disclosure may be applied to 5G mobile communication applications in n77(3.3-4.2GHz) and n78(3.3-3.8GHz) frequency bands, a glass material is adopted, the circular arc-shaped first slot 21 is arranged on the combined ground electrode layer 2, and the technology of miniaturization and mirror image array equal-division feeding is adopted, so that technical indexes of wide bandwidth, high gain and miniaturization of the antenna array are realized, and the antenna structure has the characteristics of partial light transmission and light weight.
In a second aspect, embodiments of the present disclosure provide a method for manufacturing an antenna, which may be used to manufacture the antenna described above. The method specifically comprises the following steps:
s1, providing a dielectric layer 1.
The dielectric layer 1 may be made of glass, and the step S1 may include a step of cleaning the dielectric layer 1.
And S2, forming the reference electrode layer 2 on the first surface of the dielectric layer 1 through a patterning process. Wherein, a first slot 21 is formed on at least one side edge of the reference electrode layer 2, and the first slot 21 is an arc slot.
In some examples, step S2 may specifically include: depositing a first metal film on the first surface of the dielectric layer 1 by adopting a magnetron sputtering mode including but not limited to, then performing gluing, exposure and development, then performing wet etching, and removing the glue from the strip after the etching is finished to form a pattern comprising the reference electrode layer 2. In some examples, the reference electrode layer 2 may further include a second open groove 22 disposed between two adjacent first open grooves 21, and at this time, the first open groove 21 and the second open groove 22 may be formed in one patterning process.
S3, forming a pattern including the radiating element 31 and the first microstrip line 32 on the second surface of the dielectric layer 1 through a patterning process. Wherein an orthographic projection of one radiation element 31 on the medium layer 1 at least partially overlaps with an orthographic projection of the first slot 21 on the medium layer 1, preferably the orthographic projection of one radiation element 31 on the medium layer 1 is within a range defined by the orthographic projection of the first slot 21 on the medium layer 1. Of course, in some examples, the radiating element 31 and the first microstrip line 32 may also be prepared in a two-time patterning process.
In some examples, step S3 may specifically include depositing a second metal film on the first surface of the dielectric layer 1 by a method including, but not limited to, magnetron sputtering, then performing glue coating, exposure, development, and then performing wet etching, and strip removing the glue after the etching is completed to form a pattern including the radiation element 31 and the first microstrip line 32.
It should be noted that, the preparation sequence of the steps S2 and S3 may be interchanged, that is, the radiation element 31 and the first microstrip line 32 may be formed on the second surface of the dielectric layer 1, and then the reference electrode layer 2 is formed on the first surface of the dielectric layer 1, which are within the protection scope of the embodiments of the present disclosure.
In some examples, the dielectric layer 1 in the embodiment of the present disclosure includes a first sub-dielectric layer 11 and a second sub-dielectric layer 12 which are stacked, where a surface of the first sub-dielectric layer 11 facing away from the second sub-dielectric layer 12 is used as a first surface of the dielectric layer 1, a surface of the second sub-dielectric layer 12 facing away from the first sub-dielectric layer 11 is used as a second surface of the dielectric layer 1, that is, the ground electrode layer 2 is disposed on a side of the first sub-dielectric layer 11 facing away from the second sub-dielectric layer 12, and the radiation element 31 and the first microstrip line 32 are disposed on a side of the second sub-dielectric layer 12 facing away from the first sub-dielectric layer 11. In addition, the first sub-medium layer 11 and the second sub-medium layer 12 are bonded together by an adhesive layer 13. The preparation method of the embodiment of the present disclosure can also be realized by the following steps.
And S11, providing the first sub-medium layer 11.
The first sub-dielectric layer 11 may be made of glass, and the step S11 may include a step of cleaning the first sub-dielectric layer 11.
And S12, forming a reference electrode layer on the first sub-medium layer 11 through a patterning process. Wherein, a first slot 21 is formed on at least one side edge of the reference electrode layer, and the first slot 21 is an arc slot.
Here, the step of forming the reference electrode layer 2 is the same as the step S2, and therefore, the description thereof will not be repeated.
And S13, providing the second sub-medium layer 12.
The second sub-dielectric layer 12 may be made of glass, and the step S13 may include a step of cleaning the second sub-dielectric layer 12.
S14, a pattern including the radiating element 31 and the first microstrip line 32 is formed on the second sub-dielectric layer 12 by a patterning process. Wherein the orthographic projection of one radiating element 31 on the second sub-medium layer 12 is within the orthographic projection of the first slot 21 on the medium layer 1. Of course, in some examples, the radiating element 31 and the first microstrip line 32 may also be prepared in a two-time patterning process.
Here, the steps of forming the radiating element 31 and the first microstrip line 32 are the same as the step S3, and therefore, the description thereof will not be repeated.
S15, the first sub-medium layer 11 formed with the reference electrode layer 2 and the second sub-medium layer 12 formed with the radiating element 31 and the first microstrip line 32 are bonded together by the adhesive layer 13.
In the above example, the steps S11 and S12 precede the steps S13 and S14, but in the actual process, the steps S13 and S14 may be performed first, and then the steps S11 and S12 may be performed.
In addition, in the embodiment of the present disclosure, the antenna structure also includes only the dielectric layer 1, the reference electrode layer 2, the radiation element 31, and the first microstrip line 32 formed as described above. The antenna structure may further include a feeding structure 5 formed on the second surface of the dielectric layer 1 and electrically connected to the first microstrip line 32. If the feeding structure 5 adopts the feeding network formed by the second microstrip line 511, the feeding structure 5 formed by the second microstrip line 511 can be formed while the first microstrip line 32 and the radiating element 31 are formed.
In the embodiment of the present disclosure, each structure of the antenna structure may be formed on the first sub-dielectric layer 11 and the second sub-dielectric layer 12 made of glass material by using a patterning process, so that the formed antenna structure may be miniaturized and designed to be light and thin.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the utility model, and these modifications and improvements are also considered to be within the scope of the utility model.
Claims (22)
1. An antenna, comprising:
a dielectric layer having a first surface and a second surface oppositely disposed along a thickness direction thereof;
the reference electrode layer is arranged on the first surface of the dielectric layer, and at least one side edge of the reference electrode layer is provided with a first open slot which is an arc open slot;
the at least one radiation element is arranged on the second surface of the medium layer, and the orthographic projection of the at least one radiation element on the medium layer falls into the orthographic projection of the first notch on the medium layer;
the first microstrip line is arranged on the second surface of the dielectric layer, is electrically connected with the radiating element and at least partially overlaps with the orthographic projection of the reference electrode layer on the dielectric layer.
2. The antenna of claim 1, wherein the radiating elements and the first slots are disposed in a one-to-one correspondence, and orthographic projections of centers of the correspondingly disposed radiating elements and the first slots on the dielectric layer are spaced apart.
3. The antenna of claim 1, further comprising a feed structure located on the second surface of the dielectric layer, wherein the feed structure at least partially overlaps with an orthographic projection of the first microstrip line on the dielectric layer.
4. An antenna according to claim 3, wherein the feed structure is electrically connected to the first microstrip line.
5. The antenna of claim 3, wherein the reference electrode layer has a first side and a second side disposed opposite each other along a length thereof; the first slot is disposed on at least one of the first side and the second side; the feed structure comprises at least one feed structure, and one feed structure is electrically connected with the first microstrip line connected with the radiation element positioned on the same side.
6. The antenna of claim 5, wherein first slots are disposed on both the first side and the second side of the reference electrode layer, and the number of the first slots on both the first side and the second side is 2nEach feed structure comprises an n-level second microstrip line;
one second microstrip line positioned at the 1 st level is connected with two adjacent first microstrip lines, and the first microstrip lines connected with different second microstrip lines positioned at the 1 st level are different; one second microstrip line at the mth level is connected with two adjacent second microstrip lines at the m-1 level, and the second microstrip lines at the m-1 level, which are connected with different second microstrip lines at the mth level, are different; wherein n is more than or equal to 2, m is more than or equal to 2 and less than or equal to n, and m and n are integers.
7. The antenna of claim 6, wherein the reference electrode layer comprises a first sub-reference electrode layer and a second sub-reference electrode layer arranged side by side, and a side of the first sub-reference electrode layer opposite to the second sub-reference electrode layer is the first side, and a side of the second sub-reference electrode layer opposite to the first sub-reference electrode layer is the second side.
8. An antenna according to claim 6 or 7, wherein the feed structure further comprises a transformer; wherein the converter comprises a first feed port, a second feed port, and a third feed port; the second feed port and the third feed port are respectively connected with the second microstrip lines of the nth stage of the two different feed structures.
9. An antenna according to any of claims 5-7, characterized in that the antenna is arranged mirror-symmetrically in the extension direction of the perpendicular bisector of the width of the reference electrode layer.
10. An antenna according to any of claims 5-7, characterized in that the feed structure is arranged mirror-symmetrically in the extension direction of the perpendicular bisector of the reference electrode layer width.
11. The antenna of claim 3, wherein a first slot is disposed on only one of the first side and the second side of the reference electrode layer, and the number of the first slots is 2nEach feed structure comprises an n-level second microstrip line;
one second microstrip line positioned at the 1 st level is connected with two adjacent first microstrip lines, and the first microstrip lines connected with different second microstrip lines positioned at the 1 st level are different; one second microstrip line at the mth level is connected with two adjacent second microstrip lines at the m-1 level, and the second microstrip lines at the m-1 level, which are connected with different second microstrip lines at the mth level, are different; wherein n is more than or equal to 2, m is more than or equal to 2 and less than or equal to n, and m and n are integers.
12. The antenna of claim 11, wherein the feed structure further comprises a transducer; the converter comprises a first feeding port and a second feeding port, and the second feeding port is connected with the second microstrip line of the nth stage of the feeding structure.
13. The antenna of claim 1, wherein the dielectric layers comprise a first sub-dielectric layer and a second sub-dielectric layer arranged in a stacked arrangement; the reference electrode layer is arranged on one side of the first sub-medium layer, which is far away from the second sub-medium layer, the radiation element and the first microstrip line are arranged on one side of the second sub-medium layer, which is far away from the first sub-medium layer, and the first sub-medium layer and the second sub-medium layer are connected through an adhesive layer.
14. The antenna of claim 13, wherein the first sub-dielectric layer and the second sub-dielectric layer are made of glass.
15. The antenna of claim 1, wherein the two adjacent first slots on the same side of the reference electrode layer have the same spacing therebetween.
16. The antenna of claim 1, wherein a second slot is disposed between two adjacent first slots on the same side of the reference electrode layer.
17. The antenna of claim 16, wherein the second slot comprises a rectangular slot.
18. The antenna of claim 1, wherein an orthographic projection of the radiating element on the dielectric layer is located within a range defined by the dielectric layer corresponding to the first slot.
19. The antenna of claim 1, wherein the shape of the radiating element comprises a circle.
20. The antenna of claim 1, wherein the first microstrip line is a first portion and a second portion electrically connected, the first portion is connected to the radiating element, the second portion is electrically connected to the feeding structure, and an extending direction of the first portion and an extending direction of the second portion are perpendicular to each other.
21. The antenna of claim 1, wherein the impedance of the first microstrip line is 50 Ω.
22. The antenna of claim 1, wherein a cover plate is further disposed on a side of the first microstrip line and the radiating element facing away from the second surface of the dielectric layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120241574.3U CN215579068U (en) | 2021-01-28 | 2021-01-28 | Antenna with a shield |
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| CN202120241574.3U CN215579068U (en) | 2021-01-28 | 2021-01-28 | Antenna with a shield |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114824804A (en) * | 2021-01-28 | 2022-07-29 | 京东方科技集团股份有限公司 | Antenna and preparation method thereof |
| CN115241631A (en) * | 2022-07-15 | 2022-10-25 | 西安电子科技大学 | W-band miniaturized low-cross-coupling on-chip antenna |
-
2021
- 2021-01-28 CN CN202120241574.3U patent/CN215579068U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114824804A (en) * | 2021-01-28 | 2022-07-29 | 京东方科技集团股份有限公司 | Antenna and preparation method thereof |
| CN115241631A (en) * | 2022-07-15 | 2022-10-25 | 西安电子科技大学 | W-band miniaturized low-cross-coupling on-chip antenna |
| CN115241631B (en) * | 2022-07-15 | 2023-11-21 | 西安电子科技大学 | W-band miniaturized low cross-coupling on-chip antenna |
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