CN115241631B - W-band miniaturized low cross-coupling on-chip antenna - Google Patents
W-band miniaturized low cross-coupling on-chip antenna Download PDFInfo
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- CN115241631B CN115241631B CN202210838299.2A CN202210838299A CN115241631B CN 115241631 B CN115241631 B CN 115241631B CN 202210838299 A CN202210838299 A CN 202210838299A CN 115241631 B CN115241631 B CN 115241631B
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- 238000006880 cross-coupling reaction Methods 0.000 title claims abstract description 20
- 239000003990 capacitor Substances 0.000 claims abstract description 119
- 239000002184 metal Substances 0.000 claims abstract description 32
- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005855 radiation Effects 0.000 claims description 10
- 238000005388 cross polarization Methods 0.000 description 20
- 230000003071 parasitic effect Effects 0.000 description 9
- 238000004088 simulation Methods 0.000 description 9
- 238000002821 scintillation proximity assay Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 208000007101 Muscle Cramp Diseases 0.000 description 1
- 208000005392 Spasm Diseases 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/52—Means for reducing coupling between antennas; Means for reducing coupling between an antenna and another structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/0407—Substantially flat resonant element parallel to ground plane, e.g. patch antenna
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Abstract
The application discloses a W-band miniaturized low cross-coupling on-chip antenna, which relates to the technical field of millimeter wave on-chip antennas and comprises the following components: a substrate; a first metal layer; the patches include a first patch, a second patch, and a third patch; the loading capacitor comprises a first capacitor, a second capacitor, a third capacitor and a fourth capacitor; the orthographic projection of the first capacitor is positioned in the orthographic projection range of the first patch, the orthographic projections of the second capacitor and the third capacitor are positioned in the orthographic projection range of the second patch, and the orthographic projection of the fourth capacitor is positioned in the orthographic projection range of the third patch; the front projection of the matching capacitor is positioned in the range of the front projection of the transmission line; the bonding pad is positioned on the same layer as the patch and comprises a first bonding pad, a second bonding pad and a third bonding pad; orthographic projections of the first bonding pad and the third bonding pad overlap orthographic projections of the first metal layer; the orthographic projection of the second bonding pad does not overlap with the orthographic projection of the first metal layer. The application can reduce the size of the antenna.
Description
Technical Field
The application belongs to the technical field of antennas on millimeter wave plates, and particularly relates to a W-band miniaturized low cross-coupling antenna on a plate.
Background
With the continuous development of wireless communication technology, there is an increasing demand for transmission rates. The ultra-wide bandwidth of the device can support transmission rate of tens of Gbps, and the device has the advantages of rich spectrum resources, short wavelength, small interference and the like in a millimeter wave frequency band (30-300 GHz); particularly in the W band, the Equivalent Isotropic Radiated Power (EIRP) can be transmitted for a longer distance compared with other frequency bands due to the low attenuation characteristic of the atmosphere, and meanwhile, in the W band, the physical size of a passive device is greatly reduced, so that the on-chip full integration of a millimeter wave system is possible.
The antenna is used as an indispensable key module in a wireless communication system, and the size of the antenna determines the overall integration level of the system to a great extent; to realize the integrated integration of millimeter wave system and antenna, on-chip antenna technology is one of the important approaches; the on-chip antenna based on the semiconductor technology can realize high integration of the antenna and the chip and has the advantages of high reliability, compact structure and the like. Meanwhile, the antenna and the chip can be directly connected, so that off-chip interconnection is avoided, interconnection loss is effectively reduced, joint design of the antenna and the chip is facilitated, and design is more flexible.
Compared with the traditional half-wavelength microstrip antenna (Microstrip Patch Antenna, MPA), the length size of the quarter-wavelength short-circuit microstrip antenna (Shorted Patch Antenna, SPA) can be reduced by half, the radiation gain difference is not large, but the cross polarization performance of the quarter-wavelength short-circuit microstrip antenna is significantly deteriorated.
Therefore, there is a need to improve the cross-polarization performance of antennas.
Disclosure of Invention
The present application provides a solution to the above-mentioned problems of the prior art. The application relates to a W-band miniaturized low cross-coupling on-chip antenna, which aims to solve the technical problems by adopting the following technical scheme:
in a first aspect, the present application provides a W-band miniaturized low cross-coupling on-chip antenna comprising:
a substrate;
a first metal layer located on one side of the substrate;
the patch is positioned on one side of the first metal layer, which is away from the substrate; the patches comprise a first patch, a second patch and a third patch which are positioned on the same layer; the first patch and the third patch are respectively positioned at two sides of the second patch along the first direction;
a loading capacitor positioned between the first metal layer and the patch; the loading capacitor comprises a first electrode and a second electrode; along the second direction, the orthographic projection of the first electrode overlaps with the orthographic projection of the second electrode; the loading capacitor comprises a first capacitor, a second capacitor, a third capacitor and a fourth capacitor; along the second direction, the orthographic projection of the first capacitor is positioned in the orthographic projection range of the first patch, the orthographic projections of the second capacitor and the third capacitor are positioned in the orthographic projection range of the second patch, and the orthographic projection of the fourth capacitor is positioned in the orthographic projection range of the third patch;
the transmission line is positioned on the central axis of the antenna, and the transmission line and the patch are positioned on the same layer;
matching the capacitor and the loading capacitor in the same layer; along the second direction, the orthographic projection of the matching capacitor is positioned in the orthographic projection range of the transmission line;
the bonding pad is positioned on the same layer as the patch and comprises a first bonding pad, a second bonding pad and a third bonding pad which are sequentially arranged along a first direction; along the second direction, the orthographic projection of the first bonding pad and the orthographic projection of the third bonding pad are overlapped with the orthographic projection of the first metal layer, and the first bonding pad and the third bonding pad are electrically connected with the first metal layer; the orthographic projection of the second bonding pad is not overlapped with the orthographic projection of the first metal layer; the first direction intersects the second direction.
Optionally, the first patch includes an open end and a short end along a third direction; the first capacitor is positioned at the open end of the first patch;
the third patch comprises an open end and a short end along a third direction; the fourth capacitor is positioned at the open end of the third patch;
the second patch comprises an open end and a short end along a third direction; the second capacitor and the third capacitor are positioned at the open end of the second patch, and the second capacitor and the third capacitor are symmetrical along the central axis of the antenna; the third direction intersects the first direction;
the open ends of the first patch and the third patch correspond to the open ends of the second patch, and the open ends of the first patch and the third patch correspond to the open ends of the second patch.
Optionally, the first electrode or the second electrode of the first capacitor, the first electrode or the second electrode of the second capacitor, the first electrode or the second electrode of the third capacitor, and the first electrode or the second electrode of the fourth capacitor are electrically connected with the first metal layer.
Optionally, the second patch includes a groove, the groove being concave along a third direction; the transmission line is at least partially located in the slot and is electrically connected to the feed point of the recess.
Optionally, in the third direction, the dimensions of the first patch, the second patch, and the third patch are all the same, and in the first direction, the dimensions of the first patch and the third patch are the same and are all smaller than the dimensions of the second patch.
Optionally, the first pad, the second pad, and the third pad are the same size; the first, second and third pads have dimensions of 50×50 μm 2 The spacing between the centers of adjacent pads is 100 μm.
Optionally, the second patch has a dimension in the first direction of 430 μm to 450 μm, and the first patch and the second patch have a dimension in the first direction of 200 μm to 220 μm;
the first patch, the second patch and the third patch all have dimensions of 250 μm to 270 μm along the third direction.
Optionally, the distance between adjacent boundaries of the first patch and the second patch is 40 μm to 50 μm along the first direction.
Optionally, the first loading capacitor and the fourth loading capacitor have a dimension in the first direction of 31 μm to 40 μm; the second loading capacitor and the third loading capacitor have a dimension in the first direction of 35 μm to 45 μm.
Optionally, the transmission line has a dimension in the first direction of 25 μm to 35 μm;
the distance between the boundary of the transmission line and the boundary of the groove of the second patch is 14-25 μm along the first direction.
The application has the beneficial effects that:
according to the W-band miniaturized low cross-coupling on-chip antenna provided by the application, after the parasitic SPA is coupled by introducing the first patch and the third patch, the size and the distance between the first patch and the third patch can be changed, so that the intensity of parasitic cross-polarization magnetic current can be adjusted, and the cross polarization of the SPA is reduced; in addition, a first capacitor is arranged on the first patch, a second capacitor and a third capacitor are arranged on the second patch, and a fourth capacitor is arranged on the third patch, so that the effect of reducing the resonance frequency can be achieved, and the size of the antenna is reduced; as the size of the capacitor increases, the resonant frequency of the antenna gradually decreases, thereby reducing the size of the antenna.
The present application will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a top view of an antenna according to an embodiment of the present application;
FIG. 2 is a cross-sectional view of the antenna provided by the embodiment of FIG. 1 along line A-A';
FIG. 3 is a cross-sectional view of the antenna provided by the embodiment of FIG. 1 along line B-B';
FIG. 4 is a schematic structural view of a conventional patch according to an embodiment of the present application;
FIG. 5 is a schematic view of a patch according to an embodiment of the present application;
FIG. 6 is a graph showing a relationship between a change in loading capacitance and a change in antenna parameter according to an embodiment of the present application;
FIG. 7 is a test chart of a simulation of an antenna provided by an embodiment of the present application;
fig. 8 is another test chart of a simulation of an antenna provided by an embodiment of the present application;
fig. 9 is another test chart of a simulation of an antenna provided by an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to specific examples, but embodiments of the present application are not limited thereto.
Referring to fig. 1 to 3, fig. 1 is a top view of an antenna according to an embodiment of the present application, fig. 2 is a cross-sectional view along A-A 'of the antenna according to the embodiment of fig. 1, and fig. 3 is a cross-sectional view along B-B' of the antenna according to the embodiment of fig. 1, a miniaturized low cross-coupling on-chip antenna with W-band according to the present application, including:
a substrate 10;
a first metal layer 70 located at one side of the substrate 10;
a patch located on a side of the first metal layer 70 facing away from the substrate 10; the patches include a first patch 21, a second patch 22 and a third patch 23 in the same layer; the first patch 21 and the third patch 23 are located on both sides of the second patch 22 along the first direction D1, respectively;
a loading capacitor located between the first metal layer 70 and the patch; the loading capacitor comprises a first electrode and a second electrode; along the second direction D2, the orthographic projection of the first electrode overlaps the orthographic projection of the second electrode; the loading capacitor comprises a first capacitor 31, a second capacitor 32, a third capacitor 33 and a fourth capacitor 34; along 50, the orthographic projection of the first capacitor 31 is within the orthographic projection of the first patch 21, the orthographic projections of the second capacitor 32 and the third capacitor 33 are within the orthographic projection of the second patch 22, and the orthographic projection of the fourth capacitor 34 is within the orthographic projection of the third patch 23;
a transmission line 40 located at the central axis of the antenna, and the transmission line 40 and the patch are located at the same layer;
a matching capacitor 50, which is the same layer as the loading capacitor; along the second direction D2, the orthographic projection of the matching capacitor 50 is located within the range of the orthographic projection of the transmission line 40;
the bonding pads are positioned on the same layer as the patches and comprise a first bonding pad 61, a second bonding pad 62 and a third bonding pad 63 which are sequentially arranged along a first direction D1; in the second direction D2, the first and third pads 61 and 63 each overlap the first metal layer 70, and the first and third pads 61 and 63 are electrically connected to the first metal layer 70; the second pad 62 does not overlap the first metal layer 70; the first direction D1 intersects the second direction D2.
Specifically, referring to fig. 1 to 3, according to the present embodiment, based on the IBM6DM0.13 μm process, a miniaturized low cross-coupling on-chip antenna of W-band is provided, which is provided with a substrate 10, a first metal layer 70, a patch, a loading capacitor, a transmission line 40, a matching capacitor 50 and a bonding pad; the patch comprises a first patch 21, a second patch 22 and a third patch 23 which are sequentially arranged along a first direction D1, wherein the second patch 22 is a main patch, the first patch 21 and the third patch 23 are auxiliary patches, the first patch 21 and the third patch 23 are symmetrical relative to the first patch 21, and two coupling parasitic patches are formed by introducing the first patch 21 and the third patch 23, so that cross polarization radiation cancellation can be realized, and the cross polarization radiation intensity of SPA is effectively reduced; the loading capacitor comprises a first capacitor 31, a second capacitor 32, a third capacitor 33 and a fourth capacitor 34, and the loading capacitor achieves the effect of reducing the resonance frequency by increasing the capacitance of the open circuit surface of the antenna, so that the size of the antenna is reduced; it is understood that the loading capacitor includes a first electrode and a second electrode which are stacked, and it is understood that as the size of the loading capacitor increases, the resonant frequency of the antenna gradually decreases, thereby achieving the size reduction of the antenna. It should be noted that, while the size of the antenna may be significantly reduced while the capacitance is increased, the radiation efficiency of the antenna may be reduced; therefore, the loading capacitor is required to be valued, which compromises the antenna size and radiation performance.
Further, the transmission line 40 is located at the central axis of the antenna, the transmission line 40 and the patch are located at the same layer, and the transmission line 40 is provided with a matching capacitor 50 for adjusting the impedance of the antenna, so that simplification of feed matching is realized; the pads include a first pad 61, a second pad 62, and a third pad 63; wherein, the first bonding pad 61 and the third bonding pad 63 are grounded, so as to realize conversion from CPW mode to microstrip mode, the second bonding pad 62 is not grounded, and the capacitance from the second bonding pad 62 to ground is realized; a matching capacitor 50 is added to the transmission line 40 for adjusting the impedance of the antenna, enabling simplification of feed matching.
In this embodiment, after two coupling parasitic spasms of the first patch 21 and the third patch 23 are introduced, the sizes and the distances between the first patch 21 and the third patch 23 are changed, so that the intensities of the parasitic cross-polarized magnetic currents can be adjusted, and the cross polarization of the SPAs is reduced; in addition, the first capacitor 31 is arranged on the first patch 21, the second capacitor 32 and the third capacitor 33 are arranged on the second patch 22, and the fourth capacitor 34 is arranged on the third patch 23, so that the effect of reducing the resonance frequency can be achieved, and the size of the antenna can be reduced; as the size of the capacitor increases, the resonant frequency of the antenna gradually decreases, thereby reducing the size of the antenna.
It should be noted that, by changing the size and the distance between the first patch 21 and the third patch 23, the intensity of the parasitic cross-polarized magnetic current can be adjusted, so as to reduce the cross polarization under the sky; in the prior art, please refer to fig. 4, fig. 4 is a schematic structural diagram of an existing patch provided by the embodiment of the present application, in which the main polarization direction is M2, and the cross polarization directions are M1 and M3, so that the cross polarization is deteriorated; in this embodiment, referring to fig. 5, fig. 5 is a schematic structural diagram of a patch provided in the embodiment of the present application, where a first patch 21 and a second patch 22 are provided, two pairs of magnetic current pairs M1, M3, M5 and M7 with opposite directions can be generated respectively along two planes in a first direction D1, so as to implement cross polarization radiation cancellation, and effectively reduce cross polarization radiation intensity of an antenna; in addition, by varying the size and spacing of the first patch 21 and the third patch 23, the strength of the parasitic cross-polarized magnetic currents M1, M7 can be adjusted, thereby reducing the cross-polarization of the antenna.
In an alternative embodiment of the application, the first patch 21 comprises an open end and a short end along the third direction D3; the first capacitor 31 is located at the open end of the first patch 21;
the third patch 23 includes an open end and a short end in the third direction D3; the fourth capacitor 34 is located at the open end of the third patch 23;
the second patch 22 includes an open end and a short end in the third direction D3; the second capacitor 32 and the third capacitor 33 are located at the open end of the second patch 22, and the second capacitor 32 and the third capacitor 33 are symmetrical along the central axis of the antenna; the third direction D3 intersects the first direction D1;
the open ends of the first patch 21 and the third patch 23 correspond to the open ends of the second patch 22, and the open ends of the first patch 21 and the third patch 23 correspond to the open ends of the second patch 22.
Specifically, in this embodiment, the open ends of the first patch 21 and the third patch 23 are located at the same positions, the open ends of the second patch 22 are located at opposite positions from the open ends of the first patch 21, and the open ends of the second patch 22 are located at opposite positions from the open ends of the first patch 21; the short-circuited end is connected to the first metal layer 70 from the metal layer where the patch is located by a conductive via.
The size of the short-circuited end in the third direction D3 may be 15 μm to 25 μm, and may be 20 μm.
In an alternative embodiment of the application, the first or second electrode of the first capacitor 31, the first or second electrode of the second capacitor 32, the first or second electrode of the third capacitor 33 and the first or second electrode of the fourth capacitor 34 are electrically connected to the first metal layer 70.
In an alternative embodiment of the present application, the second patch 22 includes a recess that is concave along the third direction D3; the transmission line 40 is at least partially located within the slot and is electrically connected to the feed point of the slot.
In an alternative embodiment of the present application, the dimensions of the first patch 21, the second patch 22 and the third patch 23 are all the same along the third direction D3, and the dimensions of the first patch 21 and the third patch 23 are all the same along the first direction D1 and are smaller than the dimensions of the second patch 22.
Specifically, in this embodiment, the dimensions of the first patch 21 and the third patch 23 are the same, and the second patch 22 is symmetrical, the loading capacitances on the first patch 21 and the third patch 23 are the same, and the loading capacitances are located at the open ends of the first patch 21 and the third patch 23, and the loading capacitances increase the capacitance of the open surface of the antenna to achieve the effect of reducing resonance, so as to reduce the dimension of the antenna.
Referring to fig. 6, fig. 6 is a graph showing a relationship between a change in loading capacitance and a change in antenna parameter according to an embodiment of the present application, based on the different sizes of the first patch 21, the second patch 22 and the third patch 23, the loading capacitance is different from the corresponding loading capacitance, and as the size of the loading capacitance increases, the resonant frequency of the antenna gradually decreases, thereby reducing the size of the antenna.
In an alternative embodiment of the present application, the first, second and third pads 61, 62, 63 are the same size; a first bonding pad 61,The second and third pads 62 and 63 have dimensions of 50×50 μm 2 The spacing between the centers of adjacent pads is 100 μm.
It should be noted that, the antenna in this embodiment adopts a feeding mode of direct coupling of 50Ω microstrip line, and the impedance of the antenna can be adjusted by adjusting the position of the feeding point; simulation results show that the loss of the pad-to-microstrip line conversion structure is about 0.2dB, and the port reflection coefficient is greater than-25 dB.
It should be noted that, along the second direction D2, the second pad 62 has no overlapping area with the first metal layer 70, and it is understood that an opening is disposed in a region corresponding to the first metal layer 70, so that the second pad 62 has no overlapping area with the first metal layer 70; alternatively, the size of the opening in the first direction D1 may be 65 μm to 75 μm, or may be 70 μm.
In an alternative embodiment of the application, the second patch 22 has a dimension in the first direction D1 of 430 μm to 450 μm, which may be 440 μm; the first patch 21 and the second patch 22 have a size of 200 μm to 220 μm, which may be 210 μm, in the first direction D1;
the first patch 21, the second patch 22 and the third patch 23 each have a size of 250 μm to 270 μm in the third direction, and may be 260 μm.
In an alternative embodiment of the application, the distance of the adjacent boundaries of the first patch 21 and the second patch 22 in the first direction D1 is 40 μm to 50 μm, which may be 45 μm.
In an alternative embodiment of the application, the first and fourth loading capacitances have a dimension in the first direction D1 of 31 μm to 40 μm, possibly 36 μm; the dimensions of the second and third loading capacitances in the first direction D1 are 35 μm to 45 μm, which may be 40 μm.
In an alternative embodiment of the application, the transmission line 40 has a dimension in the first direction D1 of 25 μm to 35 μm, possibly 30 μm;
the distance between the boundary of the transmission line 40 and the boundary of the groove of the second patch 22 in the first direction D1 is 14 μm to 25 μm, which may be 20 μm.
In an alternative embodiment of the application, the size of the matching capacitor 50 in the third direction D3 is 35 μm to 45 μm, which may be 40 μm.
In an alternative embodiment of the present application, please refer to fig. 7 to 9, fig. 7 is a test chart of the simulation of the antenna provided by the embodiment of the present application, and fig. 8 is another test chart of the simulation of the antenna provided by the embodiment of the present application; fig. 9 is another test chart of a simulation of an antenna provided by an embodiment of the present application; the simulation uses 3D full wave simulation software HFSS, and the size of the rectangular patch antenna after optimization is 950 mu m multiplied by 385 mu m. For the sake of contrast, please continue to refer to fig. 4, the conventional rectangular patch antenna width value is consistent with the total width value of the antenna proposed herein, and compared with the antenna proposed by the present application, the radiator size is 950 μm×260 μm, and the antenna area is reduced by about 32.5%.
FIG. 7 shows the comparison result of the S parameters of the traditional rectangular patch antenna and the antenna provided by the application, and can be seen that the reflection coefficient of the traditional rectangular patch antenna is smaller than-10 dB at 93.01-94.79 GHz, and the relative bandwidth is 1.9%; the reflection coefficient of the antenna provided by the application is smaller than-10 dB at 92.86-97.05 GHz, the relative bandwidth is 4.4%, and the bandwidth of the antenna-10 dB is widened by about 2.4GHz.
Fig. 8 and 9 show the comparison result of the radiation patterns of the E-plane and the H-plane of the conventional rectangular patch antenna and the antenna proposed by the present application at 94 GHz; the graph shows that for the E surface, the main polarization and cross polarization performances of the antenna provided by the application and the traditional rectangular patch antenna are not quite different; for the H surface, the main polarization performance of the antenna provided by the application is not much different from that of the traditional rectangular patch antenna; compared with the existing rectangular patch antenna, the gain of the main polarized antenna is reduced by about 0.75dBi, and compared with the existing rectangular patch antenna, the cross polarization performance of the H plane is improved by about 16.5dB, and the cross polarization performance is obviously improved. Simulation results show that the 3dB beam widths of the E face and the H face of the 94GHz antenna are respectively 90 ° And 120 ° The gain of the antenna is about-3.2 dBi, the E-plane cross polarization is better than 50dB, the H-plane cross polarization is about 28dB, and the radiation efficiency of the antenna is more than 10% at 94 GHz.
According to the W-band miniaturized low cross-coupling on-chip antenna provided by the application, after the parasitic SPA is coupled by introducing the first patch and the third patch, the size and the distance between the first patch and the third patch can be changed, so that the intensity of parasitic cross-polarization magnetic current can be adjusted, and the cross polarization of the SPA is reduced; in addition, a first capacitor is arranged on the first patch, a second capacitor and a third capacitor are arranged on the second patch, and a fourth capacitor is arranged on the third patch, so that the effect of reducing the resonance frequency can be achieved, and the size of the antenna is reduced; as the size of the capacitor increases, the resonant frequency of the antenna gradually decreases, thereby reducing the size of the antenna.
The foregoing is a further detailed description of the application in connection with the preferred embodiments, and it is not intended that the application be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the application, and these should be considered to be within the scope of the application.
Claims (10)
1. A W-band miniaturized low cross-coupling on-chip antenna comprising:
a substrate;
the first metal layer is positioned on one side of the substrate and is connected with the stratum;
the patch is positioned on one side of the first metal layer, which is away from the substrate; the patches comprise a first patch, a second patch and a third patch which are positioned on the same layer; the first patch and the third patch are respectively positioned at two sides of the second patch along the first direction; the patch is a radiation layer;
the loading capacitor is positioned between the first metal layer and the patch, a first electrode of the loading capacitor is connected with the patch, and a second electrode of the loading capacitor is connected with the first metal layer; the loading capacitor comprises a first electrode and a second electrode; in a second direction, the orthographic projection of the first electrode overlaps the orthographic projection of the second electrode; the loading capacitor comprises a first capacitor, a second capacitor, a third capacitor and a fourth capacitor; along a second direction, the orthographic projection of the first capacitor is positioned in the orthographic projection range of the first patch, the orthographic projections of the second capacitor and the third capacitor are positioned in the orthographic projection range of the second patch, and the orthographic projection of the fourth capacitor is positioned in the orthographic projection range of the third patch;
the transmission line is positioned on the central axis of the antenna and is positioned on the same layer as the patch;
a matching capacitor which is in the same layer as the loading capacitor; along a second direction, the orthographic projection of the matching capacitor is positioned in the range of the orthographic projection of the transmission line;
the bonding pad is positioned on the same layer as the patch and comprises a first bonding pad, a second bonding pad and a third bonding pad which are sequentially arranged along a first direction; in a second direction, the orthographic projection of the first bonding pad and the orthographic projection of the third bonding pad are overlapped with the orthographic projection of the first metal layer, and the first bonding pad and the third bonding pad are electrically connected with the first metal layer; the orthographic projection of the second bonding pad is not overlapped with the orthographic projection of the first metal layer; the first bonding pad and the third bonding pad are both connected with the first metal layer, and the second bonding pad is connected with the transmission line; the first direction intersects the second direction.
2. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the first patch includes an open end and a short end in a third direction; the first capacitor is positioned at the open end of the first patch;
the third patch comprises an open end and a short end along a third direction; the fourth capacitor is positioned at the open end of the third patch;
the second patch comprises an open end and a short end along a third direction; the second capacitor and the third capacitor are positioned at the open end of the second patch, and the second capacitor and the third capacitor are symmetrical along the central axis of the antenna; the third direction intersects the first direction;
the open end of the first patch and the open end of the third patch correspond to the open end of the second patch, and the open end of the first patch and the open end of the third patch correspond to the open end of the second patch.
3. The W-band miniaturized low cross-coupling on-chip antenna of claim 2 wherein the first or second electrode of the first capacitor, the first or second electrode of the second capacitor, the first or second electrode of the third capacitor, and the first or second electrode of the fourth capacitor are electrically connected to the first metal layer.
4. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the second patch includes a recess that is concave along a third direction; the transmission line is at least partially positioned in the slot and is electrically connected with the feed point of the groove.
5. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the first patch, the second patch, and the third patch are all the same size in a third direction and the first patch and the third patch are all the same size in the first direction and are all smaller than the second patch.
6. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the first pad, the second pad, and the third pad are the same size; the first, second and third pads have dimensions of 50×50 μm 2 And the distance between the centers of adjacent bonding pads is 100 mu m.
7. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the second patch has a dimension in the first direction of 430 μιη to 450 μιη and the first patch and the second patch have a dimension in the first direction of 200 μιη to 220 μιη;
the first patch, the second patch and the third patch are all 250-270 μm in size along the third direction.
8. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the distance between adjacent boundaries of the first patch and the second patch is 40 μιη to 50 μιη in a first direction.
9. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the first and fourth capacitances have dimensions in a first direction of 31 μιη to 40 μιη; the second capacitor and the third capacitor have the dimensions of 35-45 mu m along the first direction.
10. The W-band miniaturized low cross-coupling on-chip antenna of claim 1 wherein the transmission line has a dimension in the first direction of 25 μm to 35 μm;
and the distance between the boundary of the transmission line and the boundary of the groove of the second patch is 14-25 microns along the first direction.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188326A (en) * | 2006-11-22 | 2008-05-28 | 三星电机株式会社 | Chip antenna and mobile communication terminal possessing same |
| KR20090054814A (en) * | 2007-11-27 | 2009-06-01 | 동신대학교산학협력단 | Multi band chip antenna for mobile communication terminal |
| CN109712947A (en) * | 2019-01-14 | 2019-05-03 | 北京七芯中创科技有限公司 | A kind of antenna component singulation structure based on the recessed embedded substrate of multilayer |
| CN209461441U (en) * | 2019-01-14 | 2019-10-01 | 北京七芯中创科技有限公司 | A kind of antenna component singulation structure based on the recessed embedded substrate of multilayer |
| CN111279552A (en) * | 2017-11-02 | 2020-06-12 | 株式会社Sk电子 | LC resonance antenna |
| CN111585032A (en) * | 2020-05-13 | 2020-08-25 | 南京航空航天大学 | Reconfigurable chip antenna based on TSV three-dimensional packaging and reconfiguration method thereof |
| CN113871880A (en) * | 2021-09-27 | 2021-12-31 | 西安电子科技大学 | Coaxial feed microstrip antenna based on strip line |
| CN215579068U (en) * | 2021-01-28 | 2022-01-18 | 京东方科技集团股份有限公司 | Antenna with a shield |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8519345B2 (en) * | 2008-10-16 | 2013-08-27 | King Abdullah University of Science and Technology (KAUST) | Miniaturized, low power FGMOSFET radiation sensor and wireless dosimeter system |
| US11431107B2 (en) * | 2019-04-11 | 2022-08-30 | Samsung Electro-Mechanics Co., Ltd. | Chip antenna module and method of manufacturing chip antenna module |
| US11545761B2 (en) * | 2020-05-22 | 2023-01-03 | Mobix Labs, Inc. | Dual-band cross-polarized 5G mm-wave phased array antenna |
-
2022
- 2022-07-15 CN CN202210838299.2A patent/CN115241631B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101188326A (en) * | 2006-11-22 | 2008-05-28 | 三星电机株式会社 | Chip antenna and mobile communication terminal possessing same |
| KR20090054814A (en) * | 2007-11-27 | 2009-06-01 | 동신대학교산학협력단 | Multi band chip antenna for mobile communication terminal |
| CN111279552A (en) * | 2017-11-02 | 2020-06-12 | 株式会社Sk电子 | LC resonance antenna |
| CN109712947A (en) * | 2019-01-14 | 2019-05-03 | 北京七芯中创科技有限公司 | A kind of antenna component singulation structure based on the recessed embedded substrate of multilayer |
| CN209461441U (en) * | 2019-01-14 | 2019-10-01 | 北京七芯中创科技有限公司 | A kind of antenna component singulation structure based on the recessed embedded substrate of multilayer |
| CN111585032A (en) * | 2020-05-13 | 2020-08-25 | 南京航空航天大学 | Reconfigurable chip antenna based on TSV three-dimensional packaging and reconfiguration method thereof |
| CN215579068U (en) * | 2021-01-28 | 2022-01-18 | 京东方科技集团股份有限公司 | Antenna with a shield |
| CN113871880A (en) * | 2021-09-27 | 2021-12-31 | 西安电子科技大学 | Coaxial feed microstrip antenna based on strip line |
Non-Patent Citations (2)
| Title |
|---|
| Investigation of a Wideband BiCMOS Fully On-Chip W-Band Bowtie Slot Antenna;Shiji Pan;《IEEE Access》;全文 * |
| 三维集成60GHz片上天线设计;胡明洋;《中国优秀硕士论文电子期刊网》;全文 * |
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